JPS60242618A - Heat treatment device for semiconductor - Google Patents

Abstract

PURPOSE:To obtain a device with which a heat treatment such as oxidizing treatment and the like is performed on the surface of a semiconductor in a clean atmosphere by a method wherein an outer circumferential pipe is provided outside the inner consisting of quartz and the like which constitutes a reaction chamber, and reaction gas such as a halogenide of hydrogen chloride, chlorine and the like is flow into the gap generated between the two pipes. CONSTITUTION:An outer circumferential pipe 2 consisting of quartz is provided between the inner pipe 1, consisting of quartz which constitutes a reaction chamber wherein a jig 9 carrying a silicon wafer 10 is housed, and a heater 3 with which the reaction chamber provided outside the inner pipe 1 is heated up to approximately 1,000-1,200 deg.C. On the inner pipe 1, oxygen gas is introduced from an introducing port 4 and it is exhausted from an exhaust port 5. Besides, the contaminated substance such as heavy metal and the like entering from the outside parts such as the heater 3 and the like is turned into a chloride by flowing the reaction gas such as hydrogen chloride gas and the like into the gap 8 formed between the inner pipe 1 and the outer circumferential pipe 2, said chloride is exhausted rom an outlet 7 and, at the same time, the reaction part where the silicon wafer 10 is positioned is maintained in an extremely clean state, and the heat treatment such as thermal oxidization and the like is performed.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor heat treatment apparatus, and more particularly to a technique for performing heat treatment such as oxidation treatment on a semiconductor surface in a clean atmosphere.

For example, Genbu Baba: Encyclopedia of Latest Electronic Devices (Showa 51)
Published on March 20, 2013, page 179 discloses an apparatus for high temperature oxidation.

It is desirable that the heat treatment of semiconductors be carried out in a clean atmosphere, and as a cleaning method during this heat treatment, for example, sodium ions (Na”) are added into the oxide film during the formation of a silicon thermal oxide film. Contamination, gold (Au), copper (
In order to avoid heavy metal contamination typified by Cu), possible methods include the W4HC# oxidation method in which hydrogen chloride gas is introduced into the reaction atmosphere, and the method in which a silicon tube is placed around the outer periphery of the quartz reaction tube. In both of these methods, contaminants from the quartz reaction tube and its outer periphery are converted into norogen compounds and removed as a gas.

However, the HCA oxidation method has drawbacks such as the setting of oxidation conditions is delicate and a large amount of chlorine enters the oxide film, increasing the instability of the interface state density. This method has drawbacks such as high cost (and not necessarily a sufficient prevention effect against heavy metals entering from heaters, etc.).The present invention aims to provide a semiconductor heat treatment apparatus that solves these drawbacks. In order to achieve this purpose, a double tube consisting of an inner tube made of quartz or the like and an outer circumferential tube installed outside the reaction chamber is used, and the gap between them is filled with hydrogen chloride, chlorine, etc.) and chlorides. It is characterized by flowing a reactive gas such as

An embodiment of the present invention will be described in detail below with reference to the drawings.

1 and 2 show an example in which the present invention is applied to an oxidation furnace for thermally oxidizing the surface of a silicon wafer 100, which constitutes a reaction chamber that houses a jig 9 on which a silicon wafer 10 is placed. An outer circumferential tube 2 made of quartz is provided between an inner tube 1 made of quartz and a heater 3 provided outside of the inner tube 1 that heats the reaction chamber to approximately 1000 C to 1200 t:'. Oxygen gas is introduced into the inner tube 1 through the gas inlet 4 and discharged through the outlet 5, and hydrogen chloride gas is introduced into the gap 8 between the inner tube 1 and the outer tube 2 through the gas inlet 6. is introduced to fill the gap 8 and is discharged from the flow discharge lower.

In this way, by flowing a reactive gas such as hydrogen chloride (HC) gas into the inside of the double pipe 8, contaminants such as heavy metals that enter from outside the heater 3 etc. are removed from the chloride in the gap between the double pipes. This is discharged from the output lower, and contamination from the inner tube is also removed, and the reaction area where the silicon wafer 10 is located is kept in an extremely clean state, and heat treatment such as thermal oxidation is performed.

In addition, as can be seen from the figure, the outer circumferential tube 2 is provided so as to completely enclose the outer circumference of the inner tube 1 at least in the reaction section, so it also functions as a so-called heat-uniforming tube that ensures uniform heat distribution. I'm ready.

In the above explanation, an example was described in which both the inner tube and the outer tube are made of quartz, but the materials of the inner tube and the outer tube do not have to be the same.
Furthermore, the material is not limited to quartz, and may be made of other heat-resistant materials. Furthermore, it goes without saying that a heat soaking tube may be provided separately in addition to the above-mentioned double tube, if necessary.

Further, in the above embodiment, HCl was used as the gas material introduced into the double tube gap 8, but the gas material is not limited to this, and gases such as Cl5t + Il*Ft, Br, other halogen compounds, and benzenesulfone can also be used. A chelating agent such as an acid may be used as long as it reacts with the contaminant and becomes a volatile gas, and it does not necessarily have to be a gas, but may be a liquid.

The heat treatment apparatus of the present invention as described above can be used not only for the process of oxidizing the semiconductor surface, but also for the process of diffusing conductivity type determining impurities and the like into the semiconductor substrate.

[Brief explanation of the drawing]

FIG. 1 is an explanatory diagram of a heat treatment apparatus for explaining an embodiment of the present invention, and FIG. 2 is an illustration of A-A in FIG.
It is a sectional view taken along the line '. 1...Inner tube, 2...Outer tube, 3...Heater. Agent: Patent Attorney Katsuo Ogawa Figure 1 Figure 2

Claims (1)

[Claims] 1. An inner tube in which a semiconductor device is placed, a gas inlet provided in the inner tube, an outer tube provided with a gap around the inner tube, and a semiconductor installed in the inner tube. 1. A semiconductor heat treatment device comprising: a heater that applies heat to a semiconductor;