JPS60240170A - Amorphous solar battery - Google Patents
Amorphous solar batteryInfo
- Publication number
- JPS60240170A JPS60240170A JP59097847A JP9784784A JPS60240170A JP S60240170 A JPS60240170 A JP S60240170A JP 59097847 A JP59097847 A JP 59097847A JP 9784784 A JP9784784 A JP 9784784A JP S60240170 A JPS60240170 A JP S60240170A
- Authority
- JP
- Japan
- Prior art keywords
- amorphous
- layer
- irregular structure
- light
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 229910001220 stainless steel Inorganic materials 0.000 claims abstract description 12
- 239000010935 stainless steel Substances 0.000 claims abstract description 12
- 238000000137 annealing Methods 0.000 claims abstract description 7
- 239000010408 film Substances 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims 2
- 229910052709 silver Inorganic materials 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 238000005566 electron beam evaporation Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 3
- 230000001788 irregular Effects 0.000 abstract 5
- 230000031700 light absorption Effects 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明は、アモルファス太陽電池に関し、特にその効
率向上のための裏面反射光有効利用に関するものである
。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to an amorphous solar cell, and particularly to the effective use of back reflected light to improve the efficiency of the amorphous solar cell.
従来のアモルファス太陽電池を第１図に示す。 A conventional amorphous solar cell is shown in FIG.
図において、アモルファス膜１に入射した光は、一部吸
収されず、このアモルファス膜１を通過する。この通過
光を再利用するため、従来は、鏡面仕上げされたステン
レス基板２とアモルファス膜１との間にＴｉ／Ａｇ／Ｔ
ｉ層３ａを挿入し、これにより光の反射率向上を図って
いた。この構造におけるＡｇをはさんでいるＴｉは、ア
モルファス膜１とａｇ及びステンレス基板２とＡｇの接
着性を良くするために挿入したものである。In the figure, some of the light incident on the amorphous film 1 is not absorbed and passes through the amorphous film 1. In order to reuse this passing light, conventionally, Ti/Ag/T was used between the mirror-finished stainless steel substrate 2 and the amorphous film 1.
An i-layer 3a was inserted to improve the light reflectance. The Ti sandwiching Ag in this structure is inserted to improve the adhesion between the amorphous film 1 and Ag and between the stainless steel substrate 2 and Ag.
このような構造において、アモルファス膜１と八ｇとの
界面のＴｉは厚過ぎると反射率の減少を起こし、逆に薄
過ぎるとアモルファス膜１の内部応力に耐えられなくな
るため、その最適膜厚があるということが解った。In such a structure, if the Ti at the interface between the amorphous film 1 and 8g is too thick, the reflectance will decrease, and if it is too thin, it will not be able to withstand the internal stress of the amorphous film 1, so the optimum film thickness is I realized that there is.
ところで、第１図に示すＴｉ／Ａｇ／Ｔｉ層３ａは、電
子ビーム蒸着法によって、鏡面仕上げされたステンレス
基板２に堆積される。その際、基板温度を２００℃に保
ち、まず最初に約２５０人のＴｉを蒸着する。続いて第
２番目に真空を破らずＡｇを５００人はど蒸着し、３番
目にＴｉを２０〜１００人はど蒸着する。最後のＴｉの
膜厚は、上述のようにアモルファス膜１と剥離を起こさ
ず、光の反射率があまり低下しない最適膜厚である。こ
の基板を用いて作製したアモルファス太陽電池は、アモ
ルファス膜１を通過した光を反射し再利用することによ
って、効率を向上することができる。Incidentally, the Ti/Ag/Ti layer 3a shown in FIG. 1 is deposited on a mirror-finished stainless steel substrate 2 by electron beam evaporation. At this time, the substrate temperature is maintained at 200° C., and about 250 pieces of Ti are first deposited. Next, 500 people deposit Ag without breaking the vacuum, and third, 20 to 100 people deposit Ti. The final Ti film thickness is an optimum film thickness that does not cause separation from the amorphous film 1 and does not significantly reduce the light reflectance, as described above. The efficiency of an amorphous solar cell manufactured using this substrate can be improved by reflecting and reusing the light that has passed through the amorphous film 1.
従来の基板は以上のような蒸着条件で作製されており、
得られる反射面は平坦であった。このような構造におい
ては、基板に垂直入射した光は１８０°方向を変える反
射をするため、その全光路長はアモルファス膜厚の２倍
となるが、それ以上の光路長を得ることができなかった
。Conventional substrates are manufactured under the above vapor deposition conditions,
The resulting reflective surface was flat. In such a structure, light that is perpendicularly incident on the substrate is reflected with a 180° change in direction, so the total optical path length is twice the amorphous film thickness, but it is not possible to obtain a longer optical path length. Ta.
この発明は、かかる点に鑑みてなされたもので、Ｔｉ／
Ａｇ／Ｔｉ層を凹凸構造にして光を乱反射させることに
より、全光路長をアモルファス膜厚の２倍以上にするこ
とができ、その効率を向上させることのできるアモルフ
ァス太陽電池を提供することを目的としている。This invention was made in view of the above points, and is based on Ti/
The purpose of the present invention is to provide an amorphous solar cell that can make the total optical path length more than twice the amorphous film thickness and improve its efficiency by making the Ag/Ti layer have an uneven structure to diffusely reflect light. It is said that
以下、本発明の実施例を図について説明する。 Embodiments of the present invention will be described below with reference to the drawings.
第２図において、１はアモルファス膜、２はステンレス
基板、３ｂはアモルファス膜１とステンレス基板２との
界面に形成された凹凸構造のＴｉ／Ａｇ／Ｔｉ層であり
、これはＴｉ、 Ａｇ、 Ｔｉの各薄膜メタルから構成
されている。In FIG. 2, 1 is an amorphous film, 2 is a stainless steel substrate, and 3b is a Ti/Ag/Ti layer with an uneven structure formed at the interface between the amorphous film 1 and the stainless steel substrate 2. It is composed of each thin film metal.
以下、この基板の作製方法を説明する。鏡面仕上げされ
たステンレス基板２に、室温で電子ビーム蒸着法を用い
てＴｉ／Ａｇを蒸着すると鏡面基板が得られる。この基
板を３００℃〜８００℃で熱焼鈍しＴｉを蒸着すると、
第２図で示すような凹凸構造のＴｉ／Ａｇ／Ｔｉ層３ｂ
を作製することができる。A method for manufacturing this substrate will be described below. A mirror-finished substrate is obtained by depositing Ti/Ag on the mirror-finished stainless steel substrate 2 using an electron beam evaporation method at room temperature. When this substrate is thermally annealed at 300°C to 800°C and Ti is deposited,
Ti/Ag/Ti layer 3b with uneven structure as shown in FIG.
can be created.
この凹凸構造の大きさは、Ａｇを５００人蒸着し、８０
０℃で熱焼鈍した場合、高さ、直径ともに約１μｍ程度
である。この凹凸構造の大きさ及び密度は、Ａｇの蒸着
膜厚及び熱焼鈍温度を変化させることにより、自由に変
えて作製することができる。The size of this uneven structure was determined by evaporating Ag by 500 people and by 80
When thermally annealed at 0° C., both the height and diameter are about 1 μm. The size and density of this concavo-convex structure can be freely changed and produced by changing the thickness of the deposited Ag film and the thermal annealing temperature.
このように、八ｇを熱焼鈍して得られた凹凸構造のＴｉ
／Ａｇ／Ｔｉ層３ｂを持つアモルファス太陽電池は、そ
の凹凸構造により光が散乱され、これにより光路長が長
くなる。従って、本実施例では、アモルファス膜１の厚
さが従来のものと同じであっても、光の吸収量は従来の
ものに比して増すこととなり、アモルファス太陽電池の
変換効率を向上することができる。またこのような熱焼
鈍によるＴｉ／Ａｇ／Ｔｉ層の凹凸構造化は、比較的安
価で簡単な装置で容易に実現できる。In this way, the uneven structure of Ti obtained by thermally annealing 8g
In the amorphous solar cell having the /Ag/Ti layer 3b, light is scattered due to its uneven structure, thereby increasing the optical path length. Therefore, in this example, even if the thickness of the amorphous film 1 is the same as that of the conventional one, the amount of light absorbed increases compared to the conventional one, which improves the conversion efficiency of the amorphous solar cell. I can do it. Further, forming the Ti/Ag/Ti layer into an uneven structure by such thermal annealing can be easily realized using a relatively inexpensive and simple device.
なお、本発明はアモルファス太陽電池を多層構造（ｐｉ
ｎ・・・・・・ｉｎ ｏｒ ｎｉｐ・・・・・・ｉｐ構
造）にした場合にも適用できるが、この場合、アモルフ
ァス層の厚みが厚くなるため、内部応力が増加し、表面
側Ｔｉの厚みの最適化が平坦な基板よりも難しい。光の
透過率をあまり下げず、しかも剥離を起こさないように
するには上記Ｔｉの厚みを１００Å以下の膜厚にする必
要がある。Note that the present invention provides an amorphous solar cell with a multilayer structure (pi
In this case, the thickness of the amorphous layer becomes thicker, so the internal stress increases and the Ti on the surface side becomes thicker. Thickness optimization is more difficult than for flat substrates. In order to not lower the light transmittance too much and to prevent peeling, the thickness of the Ti film needs to be 100 Å or less.
また上記実施例ではＡｇを蒸着後、熱焼鈍を行なって凹
凸構造を得るようにしたが、Ａｇ蒸着時の基板温度を３
００℃〜８００℃まで上昇させても同様に凹凸構造を得
ることができ、上記実施例と同様の効果を得ることがで
きる。Furthermore, in the above embodiment, after depositing Ag, thermal annealing was performed to obtain an uneven structure, but the substrate temperature at the time of Ag deposition was
Even if the temperature is raised to 00°C to 800°C, a similar uneven structure can be obtained, and the same effects as in the above embodiments can be obtained.
〔発明の効果〕
以上のように、本発明に係るアモルファス太陽電池によ
れば、アモルファス膜とステンレス基板との界面に設け
られたＴ ｉ ／ Ａ ｇ ／ Ｔ ｉ層を凹凸構造と
し、これにより入射してきた光を乱反射させるようにし
たので、その変換効率を比較的安価にかつ容易に向上す
ることができる効果がある。[Effects of the Invention] As described above, according to the amorphous solar cell according to the present invention, the T i /A g /T i layer provided at the interface between the amorphous film and the stainless steel substrate has an uneven structure, thereby reducing the incidence of light. Since the incoming light is diffusely reflected, the conversion efficiency can be improved relatively inexpensively and easily.
第１図は従来のアモルファス太陽電池を示す断面側面図
、第２図はこの発明の一実施例によるアモルファス太陽
電池を示す断面側面図である。２１゛°・アモルファス
膜、２・・・鏡面仕上げステンレ大基板、３ｂ・・・凹
凸構造のＴｉ／八ｇへ／ Ｔ ｉ １ｉｆｔ −代理人
弁理士 早 瀬 憲 −
第１図
１′″
第２図FIG. 1 is a cross-sectional side view showing a conventional amorphous solar cell, and FIG. 2 is a cross-sectional side view showing an amorphous solar cell according to an embodiment of the present invention. 21゛°・Amorphous film, 2...Mirror finish stainless steel large substrate, 3b...Uneven structure Ti/8g/Ti 1ift - Agent Patent attorney Ken Hayase - Figure 1 1''' 2nd figure
Claims (4)
陽電池において、アモルファス膜とステンレス基板との
界面にＴｉ、 Ａｇ、 Ｔｉの各薄膜メタルからなる凹
凸構造のＴｉ／Ａｇ／Ｔｉ層置入したことを特徴とする
アモルファス太陽電池。(1) In an amorphous solar cell created using a stainless steel substrate, a Ti/Ag/Ti layer with an uneven structure made of thin film metals of Ti, Ag, and Ti is placed at the interface between the amorphous film and the stainless steel substrate. Amorphous solar cells.
鈍することによって凹凸構造とされていることを特徴と
する特許請求の範囲第１項記載のアモルファス太陽電池
。(2) The amorphous solar cell according to claim 1, wherein the Ti/Ag/Ti layer has an uneven structure by thermally annealing the Ag layer.
、上記アモルファス膜と接するＴｉ層の厚みは１００Å
以下であることを特徴とする特許請求の範囲第１項又は
第２項記載のアモルファス太陽電池。(3) Among the thin film metals of the Ti/Ag/Ti layers, the thickness of the Ti layer in contact with the amorphous film is 100 Å.
The amorphous solar cell according to claim 1 or 2, characterized in that:
ことを特徴とする特許請求の範囲第１項ないし第３項Ｍ
のいずれかに記載のアモルファス太陽電池。(4) Claims 1 to 3 M, characterized in that the amorphous film has a multilayer structure.
The amorphous solar cell according to any one of the above.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59097847A JPS60240170A (en) | 1984-05-15 | 1984-05-15 | Amorphous solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59097847A JPS60240170A (en) | 1984-05-15 | 1984-05-15 | Amorphous solar battery |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60240170A true JPS60240170A (en) | 1985-11-29 |
| JPH0360185B2 JPH0360185B2 (en) | 1991-09-12 |
Family
ID=14203120
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59097847A Granted JPS60240170A (en) | 1984-05-15 | 1984-05-15 | Amorphous solar battery |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60240170A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01171282A (en) * | 1987-12-25 | 1989-07-06 | Kanegafuchi Chem Ind Co Ltd | Photovoltaic element |
| US5334259A (en) * | 1991-09-10 | 1994-08-02 | Sanyo Electric Co., Ltd. | Amorphous silicon solar cell and method of manufacture |
| US5668050A (en) * | 1994-04-28 | 1997-09-16 | Canon Kabushiki Kaisha | Solar cell manufacturing method |
-
1984
- 1984-05-15 JP JP59097847A patent/JPS60240170A/en active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01171282A (en) * | 1987-12-25 | 1989-07-06 | Kanegafuchi Chem Ind Co Ltd | Photovoltaic element |
| US5334259A (en) * | 1991-09-10 | 1994-08-02 | Sanyo Electric Co., Ltd. | Amorphous silicon solar cell and method of manufacture |
| US5668050A (en) * | 1994-04-28 | 1997-09-16 | Canon Kabushiki Kaisha | Solar cell manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0360185B2 (en) | 1991-09-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |