JPH0360185B2 - - Google Patents
Info
- Publication number
- JPH0360185B2 JPH0360185B2 JP59097847A JP9784784A JPH0360185B2 JP H0360185 B2 JPH0360185 B2 JP H0360185B2 JP 59097847 A JP59097847 A JP 59097847A JP 9784784 A JP9784784 A JP 9784784A JP H0360185 B2 JPH0360185 B2 JP H0360185B2
- Authority
- JP
- Japan
- Prior art keywords
- amorphous
- film
- solar cell
- stainless steel
- uneven structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010408 film Substances 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 19
- 229910001220 stainless steel Inorganic materials 0.000 claims description 10
- 239000010935 stainless steel Substances 0.000 claims description 10
- 238000000137 annealing Methods 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims description 2
- 238000000151 deposition Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明は、アモルフアス太陽電池に関し、特
にその効率向上のための裏面反射光有効利用に関
するものである。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to an amorphous solar cell, and particularly to the effective use of back-reflected light to improve the efficiency of the amorphous solar cell.
従来のアモルフアス太陽電池を第１図に示す。
図において、アモルフアス膜１に入射した光は、
一部吸収されず、このアモルフアス膜１を通過す
る。この通過光を再利用するため、従来は、鏡面
仕上げされたステンレス基板２とアモルフアス膜
１との間にTi／Ag／Ti層３ａを挿入し、これに
より光の反射率向上を図つていた。この構造にお
けるAgをはさんでいるTiは、アモルフアス膜１
とAg及びステンレス基板２とAgの接着性を良く
するために挿入したものである。
A conventional amorphous solar cell is shown in FIG.
In the figure, the light incident on the amorphous film 1 is
Some of it is not absorbed and passes through this amorphous film 1. In order to reuse this passing light, conventionally a Ti/Ag/Ti layer 3a was inserted between the mirror-finished stainless steel substrate 2 and the amorphous film 1, thereby improving the light reflectance. . The Ti sandwiching Ag in this structure is the amorphous film 1.
This was inserted to improve the adhesion between Ag and the stainless steel substrate 2 and Ag.
このような構造において、アモルフアス膜１と
Agとの界面のTiは厚過ぎると反射率の減少を起
こし、逆に薄過ぎるとアモルフアス膜１の内部応
力に耐えられなくなるため、その最適膜厚がある
ということが解つた。 In such a structure, the amorphous film 1 and
It was found that there is an optimum film thickness because if Ti at the interface with Ag is too thick, the reflectance will decrease, and if it is too thin, it will not be able to withstand the internal stress of the amorphous film 1.
ところで、第１図に示すTi／Ag／Ti層３ａ
は、電子ビーム蒸着法によつて、鏡面仕上げされ
たステンレス基板２に堆積される。その際、基板
温度を200℃に保ち、まず最初に約250ÅのTiを
蒸着する。続いて第２番目に真空を破らずAgを
500Åほど蒸着し、３番目にTiを20〜100Åほど
蒸着する。最後のTiの膜厚は、上述のようにア
モルフアス膜１と剥離を起こさず、光の反射率が
あまり低下しない最適膜厚である。この基板を用
いて作製したアモルフアス太陽電池は、アモルフ
アス膜１を通過した光を反射し再利用することに
よつて、効率を向上することができる。 By the way, the Ti/Ag/Ti layer 3a shown in FIG.
is deposited on a mirror-finished stainless steel substrate 2 by electron beam evaporation. At this time, the substrate temperature is maintained at 200°C, and approximately 250 Å of Ti is first deposited. Next, the second step was to add Ag without breaking the vacuum.
Deposit about 500 Å, and thirdly deposit Ti about 20 to 100 Å. The final Ti film thickness is an optimum film thickness that does not cause peeling from the amorphous film 1 and does not significantly reduce the light reflectance, as described above. The efficiency of an amorphous solar cell manufactured using this substrate can be improved by reflecting and reusing the light that has passed through the amorphous film 1.
従来の基板は以上のような蒸着条件で作製され
ており、得られる反射面は平坦であつた。このよ
うなな構造においては、基板に垂直入射した光は
180°方向を変える反射をするため、その全光路長
はアモルフアス膜厚の２倍となるが、それ以上の
光路長を得ることができなかつた。 Conventional substrates have been manufactured under the above vapor deposition conditions, and the resulting reflective surfaces have been flat. In such a structure, light incident perpendicularly to the substrate is
Since the reflection changes direction by 180 degrees, the total optical path length is twice the thickness of the amorphous film, but it was not possible to obtain an optical path length longer than that.
この発明は、かかる点に鑑みてなされたもの
で、Ti／Ag／Ti層を凹凸構造にして光を乱反射
させることにより、全光路長をアモルフアス膜厚
の２倍以上にすることができ、その効率を向上さ
せることのできるアモルフアス太陽電池を提供す
ることを目的としている。
This invention was made in view of this point, and by making the Ti/Ag/Ti layer have an uneven structure to diffusely reflect light, the total optical path length can be made more than twice the amorphous film thickness. The objective is to provide an amorphous solar cell that can improve efficiency.
以下、本発明の実施例を図について説明する。
第２図において、１はアモルフアス膜、２はステ
ンレス基板、３ｂはアモルフアス膜１とステンレ
ス基板２との界面に形成された凹凸構造のTi／
Ag／Ti層であり、これはTi、Ag、Tiの各薄膜
メタルから構成されている。
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
In FIG. 2, 1 is an amorphous amorphous film, 2 is a stainless steel substrate, and 3b is a Ti/irregular structure formed at the interface between the amorphous film 1 and the stainless steel substrate 2.
The Ag/Ti layer is composed of thin film metals of Ti, Ag, and Ti.
以下、この基板の作製方法を説明する。鏡面仕
上げされたステンレス基板２に、室温で電子ビー
ム蒸着法を用いてTi／Agを蒸着すると鏡面基板
が得られる。この基板を300℃〜800℃で熱焼鈍し
Tiを蒸着すると、第２図で示すような凹凸構造
のTi／Ag／Ti層３ｂを作製することができる。 A method for manufacturing this substrate will be described below. A mirror-finished substrate is obtained by depositing Ti/Ag on a mirror-finished stainless steel substrate 2 using an electron beam evaporation method at room temperature. This substrate is thermally annealed at 300℃ to 800℃.
By vapor depositing Ti, a Ti/Ag/Ti layer 3b having an uneven structure as shown in FIG. 2 can be produced.
この凹凸構造の大きさは、Agを500Å蒸着し、
800℃で熱焼鈍した場合、高さ、直径ともに約1μ
ｍである。この凹凸構造の大きさ及び密度は、
Agの蒸着膜厚及び熱焼鈍温度を変化させること
により、自由に変えて作製することができる。 The size of this uneven structure is determined by depositing 500Å of Ag.
When annealed at 800℃, both height and diameter are approximately 1μ
It is m. The size and density of this uneven structure are
By changing the thickness of the deposited Ag film and the thermal annealing temperature, it is possible to freely change the thickness of the Ag deposited film and the annealing temperature.
このように、Agを熱焼鈍して得られた凹凸構
造のTi／Ag／Ti層３ｂを持つアモルフアス太陽
電池は、その凹凸構造により光が散乱され、これ
により光路長が長くなる。従つて、本実施例で
は、アモルフアス膜１の厚さが従来のものと同じ
であつても、光の吸収量は従来のものに比して増
すこととなり、アモルフアス太陽電池の変換効率
を向上することができる。またこのような熱焼鈍
によるTi／Ag／Ti層の凹凸構造化は、比較的安
価で簡単な装置で容易に実現できる。 As described above, in the amorphous solar cell having the Ti/Ag/Ti layer 3b with the uneven structure obtained by thermally annealing Ag, light is scattered by the uneven structure, thereby increasing the optical path length. Therefore, in this example, even if the thickness of the amorphous film 1 is the same as the conventional one, the amount of light absorbed increases compared to the conventional one, improving the conversion efficiency of the amorphous solar cell. be able to. Moreover, the uneven structure of the Ti/Ag/Ti layer by such thermal annealing can be easily realized using a relatively inexpensive and simple device.
なお、本発明はアモルフアス太陽電池を多層構
造（pin……in or nip……ip構造）にした場合に
も適用できるが、この場合、アモルフアス層の厚
みが厚くなるため、内部応力が増加し、表面側
Tiの厚みの最適化が平坦な基板よりも難しい。
光の透過率をあまり下げず、しかも剥離を起こさ
ないようにするには上記Tiの厚みを100Å以下の
膜厚にする必要がある。 Note that the present invention can also be applied to the case where the amorphous solar cell has a multilayer structure (pin...in or nip...ip structure), but in this case, the internal stress increases because the amorphous layer becomes thicker. Surface side
Optimizing the thickness of Ti is more difficult than for flat substrates.
In order to not lower the light transmittance too much and to prevent peeling, the thickness of the Ti film needs to be 100 Å or less.
また上記実施例ではAgを蒸着後、熱焼鈍を行
なつて凹凸構造を得るようにしたが、Ag蒸着時
の基板温度を300℃〜800℃まで上昇させても同様
に凹凸構造を得ることができ、上記実施例と同様
の効果を得ることができる。 Furthermore, in the above example, after Ag was deposited, thermal annealing was performed to obtain the uneven structure, but it is also possible to obtain the uneven structure even if the substrate temperature during Ag deposition is raised to 300°C to 800°C. Therefore, the same effects as in the above embodiment can be obtained.
以上のように、本発明に係るアモルフアス太陽
電池によれば、アモルフアス膜とステンレス基板
との界面に設けられたTi／Ag／Ti層を凹凸構造
とし、これにより入射してきた光を乱反射させる
ようにしたので、その変換効率を比較的安価にか
つ容易に向上することができる効果がある。
As described above, according to the amorphous solar cell according to the present invention, the Ti/Ag/Ti layer provided at the interface between the amorphous film and the stainless steel substrate has an uneven structure, so that incident light is diffusely reflected. Therefore, there is an effect that the conversion efficiency can be improved relatively inexpensively and easily.
第１図は従来のアモルフアス太陽電池を示す断
面側面図、第２図はこの発明の一実施例によるア
モルフアス太陽電池を示す断面側面図である。
１……アモルフアス膜、２……鏡面仕上げステ
ンレス基板、３ｂ……凹凸構造のTi／Ag／Ti
層。
FIG. 1 is a cross-sectional side view showing a conventional amorphous solar cell, and FIG. 2 is a cross-sectional side view showing an amorphous solar cell according to an embodiment of the present invention. 1...Amorphous amorphous film, 2...Mirror finish stainless steel substrate, 3b...Ti/Ag/Ti with uneven structure
layer.
Claims (1)
ス太陽電池において、 アモルフアス膜とステンレス基板との界面に
Agの熱焼鈍により凹凸構造としたTi／Ag／Ti
積層膜を挿入したことを特徴とするアモルフアス
太陽電池。 ２ 上記Ti／Ag／Ti積層膜を構成する各薄膜メ
タルのうち、上記アモルフアス膜と接するTi層
の厚みは20Å以上100Å以下であることを特徴と
する特許請求の範囲第１項記載のアモルフアス太
陽電池。 ３ 上記アモルフアス膜は、多層構造となつてい
ることを特徴とする特許請求の範囲第１項又は第
２項記載のアモルフアス太陽電池。[Claims] 1. In an amorphous solar cell created using a stainless steel substrate, at the interface between the amorphous film and the stainless steel substrate,
Ti/Ag/Ti with uneven structure created by thermal annealing of Ag
An amorphous solar cell characterized by inserting a laminated film. 2. The amorphous solar cell according to claim 1, characterized in that among the thin film metals constituting the Ti/Ag/Ti laminated film, the Ti layer in contact with the amorphous film has a thickness of 20 Å or more and 100 Å or less. battery. 3. The amorphous solar cell according to claim 1 or 2, wherein the amorphous film has a multilayer structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59097847A JPS60240170A (en) | 1984-05-15 | 1984-05-15 | Amorphous solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59097847A JPS60240170A (en) | 1984-05-15 | 1984-05-15 | Amorphous solar battery |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60240170A JPS60240170A (en) | 1985-11-29 |
| JPH0360185B2 true JPH0360185B2 (en) | 1991-09-12 |
Family
ID=14203120
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59097847A Granted JPS60240170A (en) | 1984-05-15 | 1984-05-15 | Amorphous solar battery |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60240170A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0620153B2 (en) * | 1987-12-25 | 1994-03-16 | 鐘淵化学工業株式会社 | Photovoltaic element |
| GB2260220B (en) * | 1991-09-10 | 1996-01-03 | Sanyo Electric Co | An amorphous silicon solar cell and method of the solar cell manufacture |
| US5668050A (en) * | 1994-04-28 | 1997-09-16 | Canon Kabushiki Kaisha | Solar cell manufacturing method |
-
1984
- 1984-05-15 JP JP59097847A patent/JPS60240170A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60240170A (en) | 1985-11-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |