JPS60230027A - Thermal flow sensor - Google Patents
Thermal flow sensorInfo
- Publication number
- JPS60230027A JPS60230027A JP8644184A JP8644184A JPS60230027A JP S60230027 A JPS60230027 A JP S60230027A JP 8644184 A JP8644184 A JP 8644184A JP 8644184 A JP8644184 A JP 8644184A JP S60230027 A JPS60230027 A JP S60230027A
- Authority
- JP
- Japan
- Prior art keywords
- heat flow
- thermal
- flow sensor
- temperature
- pair
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K17/00—Measuring quantity of heat
- G01K17/06—Measuring quantity of heat conveyed by flowing media, e.g. in heating systems e.g. the quantity of heat in a transporting medium, delivered to or consumed in an expenditure device
- G01K17/08—Measuring quantity of heat conveyed by flowing media, e.g. in heating systems e.g. the quantity of heat in a transporting medium, delivered to or consumed in an expenditure device based upon measurement of temperature difference or of a temperature
- G01K17/20—Measuring quantity of heat conveyed by flowing media, e.g. in heating systems e.g. the quantity of heat in a transporting medium, delivered to or consumed in an expenditure device based upon measurement of temperature difference or of a temperature across a radiating surface, combined with ascertainment of the heat transmission coefficient
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は室内暖冷房装置などの熱源の発熱量を制御する
システムに利用される熱流センサ、すなわち熱流を検出
するセンサに関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a heat flow sensor used in a system for controlling the calorific value of a heat source such as an indoor heating/cooling device, that is, a sensor for detecting heat flow.
従来例の構成とその問題点
、従来の熱流センサの構成を第１図に示す。同センサは
熱抵抗体１の表裏にサーモパイル２を組み込み、さらに
熱抵抗体１の温度測定用熱電対３を付加して構成される
。熱流センサが放熱面４に設置されたとき、熱抵抗体１
の表裏に温度差ΔＴが生じる。熱抵抗体１の熱伝導率を
人、厚さをｄとすれば、熱流Ｑは原理的にＱ＝（λ／ｄ
）ΔＴによってめられる。The structure of a conventional example, its problems, and the structure of a conventional heat flow sensor are shown in FIG. The sensor is constructed by incorporating thermopiles 2 on the front and back sides of a thermal resistor 1, and further adding a thermocouple 3 for measuring the temperature of the thermal resistor 1. When the heat flow sensor is installed on the heat radiation surface 4, the thermal resistor 1
A temperature difference ΔT occurs between the front and back sides. If the thermal conductivity of the thermal resistor 1 is human and the thickness is d, the heat flow Q is theoretically Q = (λ/d
) is determined by ΔT.
このように従来の熱流センサでは、サーモパイル２（熱
電対を複数個直列に接続したもの）および温度測定用熱
電対３が用いられているが、熱電対の熱起電力は１℃あ
たり１〜１０μＶと小さな値である。このように従来の
ものは熱流の検出感度が小さく、また、このために起電
力の検出回路が複雑で高価であるなどの問題があった。In this way, conventional heat flow sensors use a thermopile 2 (a plurality of thermocouples connected in series) and a thermocouple 3 for temperature measurement, but the thermoelectromotive force of the thermocouple is 1 to 10 μV per 1°C. This is a small value. As described above, conventional devices have problems such as low heat flow detection sensitivity, and therefore, the electromotive force detection circuit is complicated and expensive.
発明の目的
本発明は熱流の検出感度が大きく、かつ構成が簡単で安
価な熱流センサを提供することを目的とする。OBJECTS OF THE INVENTION An object of the present invention is to provide a heat flow sensor that has high heat flow detection sensitivity, has a simple configuration, and is inexpensive.
発明の構成
本発明の熱流センサは、平板状絶縁性基板の一方の表面
に形成された感温抵抗体膜と一対の電極膜とからなる第
１および第２の薄膜サーミスタ素子と熱抵抗体とからな
り、第１の薄膜サーミスタ素子と熱抵抗体と第２の薄膜
サーミスタ素子とを順次積層して構成される。Composition of the Invention The heat flow sensor of the present invention includes first and second thin film thermistor elements each consisting of a temperature sensitive resistor film and a pair of electrode films formed on one surface of a flat insulating substrate, and a thermal resistor. It is constructed by sequentially stacking a first thin film thermistor element, a thermal resistor, and a second thin film thermistor element.
平板状絶縁性基板は、感温抵抗体膜と一対の電極膜とを
保持する基板として作用するとともに熱抵抗体としても
作用する。熱抵抗体としての平板状絶縁板および他の熱
抵抗体とは本発明の熱流センサの全熱抵抗体として作用
する。この余熱抵抗体の表裏の温度差は感温抵抗体膜の
抵抗値によって検出される。感温抵抗体膜の抵抗値は１
℃あたり１〜１０％の割合で変化するので、熱流を感度
よく検出できる。The flat insulating substrate functions as a substrate that holds the temperature-sensitive resistor film and the pair of electrode films, and also functions as a thermal resistor. The flat insulating plate as a thermal resistor and other thermal resistors act as a total thermal resistor of the heat flow sensor of the present invention. The temperature difference between the front and back sides of this residual heat resistor is detected by the resistance value of the temperature-sensitive resistor film. The resistance value of the temperature sensitive resistor film is 1
Since it changes at a rate of 1 to 10% per °C, heat flow can be detected with high sensitivity.
実施例の説明
１ 本発明の一実施例を第２図に示す。これら薄膜サー
ミスタ素子は、それぞれ２個の薄膜サーミスタ素子を準
備する。熱抵抗体としての平板状絶縁性基板５，５′の
一方の表面５１．５１’に形成された感温抵抗体膜６，
６′、一対の電極膜７，７′とから構成される。平板状
絶縁基板５．ｄとしてアルミナを用い、電極膜７，７′
として厚膜電極膜を用い、感温抵抗体膜６，６′として
同じ抵抗温度特性を有するＦｅ、Ｃｏ、Ｍｎの複合酸化
物膜を用いる。Description of Embodiment 1 An embodiment of the present invention is shown in FIG. Two thin film thermistor elements are prepared for each of these thin film thermistor elements. A temperature sensitive resistor film 6 formed on one surface 51.51' of a flat insulating substrate 5, 5' serving as a thermal resistor.
6', and a pair of electrode films 7, 7'. Flat insulating substrate 5. Using alumina as d, the electrode films 7, 7'
A thick film electrode film is used as the electrode film, and a composite oxide film of Fe, Co, and Mn having the same resistance-temperature characteristics is used as the temperature-sensitive resistor films 6 and 6'.
第１の薄膜サーミスタ素子Ａ、他の熱抵抗体８および第
２の薄膜サーミスタ素子Ｂとを順次、積層して、第２図
に示す熱流センサを構成する。このとき第１および第２
の薄膜サーミスタ素子Ａ。The first thin film thermistor element A, another thermal resistor 8 and the second thin film thermistor element B are sequentially stacked to form the heat flow sensor shown in FIG. At this time, the first and second
thin film thermistor element A.
Ｂのそれぞれの感温抵抗体膜６は外部空間に接するよう
に配置される。他の熱抵抗体８として、セラミック、硝
子などの無機物、ＡＡ’、Ｃｕなどの金属、さらにはポ
リウレタン、シリコンゴムなどの有機物など固体状態の
ものが用いられる。Each temperature-sensitive resistor film 6 of B is arranged so as to be in contact with the external space. As other thermal resistors 8, solid materials such as inorganic materials such as ceramics and glass, metals such as AA' and Cu, and organic materials such as polyurethane and silicone rubber are used.
このように形成された熱流センサーこおいて、第１の薄
膜サーミスタ素子Ａの感温抵抗体膜６と第２の薄膜サー
ミスタ素子Ｂの感温抵抗体膜６′との間に１℃の温度差
が生じたとき、両者の抵抗値には約６％（熱抵抗体８の
温度は約３０℃）の差が観測された。両者の抵抗値の差
は熱抵抗体８の温度が上昇すると低下する傾向を示すが
、熱抵抗体８が約２３０℃になってもこの抵抗値の差は
約２．５％を示した。このように本発明の熱流センサは
熱抵抗体（熱抵抗体としての平板状絶縁基板５゜５′も
含め）の表裏の温度差を高感度で検出できるあで、熱流
の検出感度が大きく、またその検出回路も簡単で安価と
なる。In the heat flow sensor formed in this manner, a temperature of 1° C. is maintained between the temperature sensitive resistor film 6 of the first thin film thermistor element A and the temperature sensitive resistor film 6' of the second thin film thermistor element B. When a difference occurred, a difference of about 6% (the temperature of the thermal resistor 8 was about 30° C.) was observed in the resistance values between the two. The difference in resistance value between the two tends to decrease as the temperature of the thermal resistor 8 rises, but even when the temperature of the thermal resistor 8 reached about 230° C., the difference in resistance value showed about 2.5%. As described above, the heat flow sensor of the present invention has a high sensitivity for detecting heat flow because it can detect the temperature difference between the front and back sides of the heat resistor (including the flat insulating substrate 5°5' as the heat resistor) with high sensitivity. Moreover, its detection circuit is simple and inexpensive.
また、本発明の熱流センサは第１の薄膜サーミスタ素子
Ａの感温抵抗体膜６と第２の薄膜サーミ二り素子Ｂの感
温抵抗体膜６′履を用いているので、熱抵抗８と熱抵抗
体としての平板状絶縁性基板５゜５′とからなる全熱抵
抗体の温度は感温抵抗体膜６゜６′の抵抗値により容易
に検出できる。したがって、従来の熱流センサにおける
熱抵抗体１の温度゛測定用熱電対３は、本発明の熱流セ
ンサでは不要である。このことにより本発明の熱流セン
サは構成簡素となる。Furthermore, since the heat flow sensor of the present invention uses the temperature sensitive resistor film 6 of the first thin film thermistor element A and the temperature sensitive resistor film 6' of the second thin film thermistor element B, the thermal resistance 8 The temperature of the total thermal resistor consisting of a flat insulating substrate 5°5' serving as a thermal resistor can be easily detected from the resistance value of the temperature sensitive resistor film 6°6'. Therefore, the thermocouple 3 for measuring the temperature of the thermal resistor 1 in the conventional heat flow sensor is not necessary in the heat flow sensor of the present invention. This allows the heat flow sensor of the present invention to have a simple configuration.
また、本発明の熱流センサは、第１の薄膜サーミスタ素
子Ａと第２の薄膜サーミスタ素子Ｂとの朋ｚｒ ＊を七
工廿トド０ 訊ζ勲呂ひ寺η ２ハ）１ｔ ７ ｎ）ｈ
部片ｔか８の材質、形状を適切に選択することにより、
熱抵抗体８の熱抵抗値を広い範囲にわたり任意に設定で
きる。したがって、熱流の微小なときには熱抵抗値を大
きくし、逆に熱流の大きなときには熱抵抗値を小さくす
ることにより、測定すべき熱流に応じた適切な熱抵抗値
を持つ熱流センサが容易に得られる。Furthermore, the heat flow sensor of the present invention has a structure in which the relationship between the first thin-film thermistor element A and the second thin-film thermistor element B is determined by
By appropriately selecting the material and shape of part t or 8,
The thermal resistance value of the thermal resistor 8 can be arbitrarily set over a wide range. Therefore, by increasing the thermal resistance value when the heat flow is small, and conversely decreasing the thermal resistance value when the heat flow is large, it is easy to obtain a heat flow sensor with an appropriate thermal resistance value according to the heat flow to be measured. .
第３図に他の実施例を示す。同図には、第１の薄膜サー
ミスタ素子Ａの感温抵抗体膜６と一対の電極膜７が熱抵
抗体Ｑと接するように構成され、他方、第２の薄膜サー
ミスタ素子Ｂの感温抵抗体膜６′と一対の電極膜７′も
同様にして熱抵抗体８と接するように構成される。FIG. 3 shows another embodiment. In the figure, the temperature-sensitive resistor film 6 and the pair of electrode films 7 of the first thin-film thermistor element A are configured to be in contact with the thermal resistor Q, while the temperature-sensitive resistor film 6 of the second thin-film thermistor element B The body membrane 6' and the pair of electrode membranes 7' are similarly configured to be in contact with the thermal resistor 8.
第３図の熱流センサは、第２図の熱流センサの利点に加
え、さらに次のような利点を有する。すなわち、感温抵
抗体膜６，６′は平板状絶縁性基板５．５′と抵抗体゛
８とにより外部雰囲気から保護されるので、外部雰囲気
からの汚れ、たとえば結露水の付着に対しても感温抵抗
体膜６，６′は安定でネスヘ
なお、第１，２の薄膜サーミスタ素子Ａ、Ｂと熱抵抗体
８とは、有機系接着剤、無機系接着剤により容易に積層
することができる。The heat flow sensor shown in FIG. 3 has the following advantages in addition to the advantages of the heat flow sensor shown in FIG. That is, since the temperature-sensitive resistor films 6, 6' are protected from the external atmosphere by the flat insulating substrate 5, 5' and the resistor 8, they are protected against contamination from the external atmosphere, such as the adhesion of condensed water. Furthermore, the first and second thin film thermistor elements A and B and the thermal resistor 8 can be easily laminated using an organic adhesive or an inorganic adhesive. Can be done.
発明の効果
本発明の熱流センサによれば次の効果が得られる０
（１）熱抵抗体の表裏の温度差の検出に感温抵抗体膜を
用いているので、温度差を高感度で検出できる。したが
って、熱流の検出感度が大きく、また検出回路も簡単で
安価になる。Effects of the Invention According to the heat flow sensor of the present invention, the following effects can be obtained. (1) Since a temperature sensitive resistor film is used to detect the temperature difference between the front and back sides of the thermal resistor, the temperature difference can be detected with high sensitivity. can. Therefore, the heat flow detection sensitivity is high, and the detection circuit is simple and inexpensive.
＋２１ 感温抵抗体膜の抵抗値により熱抵抗体の温度″
を容易に検出できるので、従来の熱流センサに比べ熱抵
抗体の温度検出のために特別な温度センサ（熱電対）を
必要とせず、したがって構成が簡素化される。+21 The temperature of the thermal resistor is determined by the resistance value of the temperature-sensitive resistor film.
can be detected easily, so compared to conventional heat flow sensors, a special temperature sensor (thermocouple) is not required for detecting the temperature of the thermal resistor, and the configuration is therefore simplified.
（３）第１の薄膜サーミスタ素子と第２の薄膜サー１
ミスタ素子の間に配置される熱抵抗体の材質、形状を選
択することにより熱抵抗値を広い軛囲にわたり任意に設
定できるので、測定すべき熱流の大小に応じて適切な熱
抵抗値を有する熱流センサが容易に得られる。(3) First thin film thermistor element and second thin film thermistor element 1
By selecting the material and shape of the thermal resistor placed between the mister elements, the thermal resistance value can be set arbitrarily over a wide range, so the thermal resistance value can be set appropriately depending on the size of the heat flow to be measured. A heat flow sensor can be easily obtained.
第１図は従来の熱流センサの構成を示す断面図、第２図
、第３図は本発明の熱流センサの実施例の構成を示す断
面図である。
５．５′・・・・・・平板状絶縁性基板、６．ｄ・・・
・感温抵抗体膜、７，７′・・・・・一対の電極膜、８
・・・・・・熱抵抗体、ｆ５１．５１’・・・平板状絶
縁性基板の一方の表面、
Ａ・・・・第１の薄膜サーミスタ素子、Ｂ・・・・・第
２の薄膜サーミスタ素子。FIG. 1 is a cross-sectional view showing the structure of a conventional heat flow sensor, and FIGS. 2 and 3 are cross-sectional views showing the structure of an embodiment of the heat flow sensor of the present invention. 5.5'... Flat insulating substrate, 6. d...
・Temperature-sensitive resistor film, 7, 7'...Pair of electrode films, 8
...Thermal resistor, f51.51'...One surface of the flat insulating substrate, A...First thin film thermistor element, B...Second thin film thermistor element.
Claims (2)
抵抗体膜と一対の電極膜とからなる第１および第２の薄
膜サーミスタ素子と、熱抵抗体とからなり、前記第１の
薄膜サーミスタ素子と、熱抵抗体と第２の薄膜サーミス
タ素子を順次積層してなる熱流センサ。(1) First and second thin film thermistor elements each consisting of a temperature sensitive resistor film and a pair of electrode films formed on one surface of a flat insulating substrate, and a thermal resistor; A heat flow sensor comprising a thin film thermistor element, a thermal resistor, and a second thin film thermistor element successively laminated.
れの感温抵抗体膜と一対の電極膜とが熱抵抗体と接する
ように構成された特許請求の範囲第１項記載の熱流セン
サ。(2) The heat flow sensor according to claim 1, wherein each of the temperature-sensitive resistor films and the pair of electrode films of the first and second thin-film thermistor elements are in contact with a thermal resistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8644184A JPS60230027A (en) | 1984-04-27 | 1984-04-27 | Thermal flow sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8644184A JPS60230027A (en) | 1984-04-27 | 1984-04-27 | Thermal flow sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60230027A true JPS60230027A (en) | 1985-11-15 |
Family
ID=13887000
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8644184A Pending JPS60230027A (en) | 1984-04-27 | 1984-04-27 | Thermal flow sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60230027A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101990062B1 (en) * | 2018-12-07 | 2019-06-17 | 광운대학교 산학협력단 | Resistance change metal oxide based temperature sensor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4939473B1 (en) * | 1966-09-29 | 1974-10-25 | Offshore Co | |
| JPS60201224A (en) * | 1984-03-27 | 1985-10-11 | Kyushu Daigaku | Multilayered thin-film heat conduction gauge |
-
1984
- 1984-04-27 JP JP8644184A patent/JPS60230027A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4939473B1 (en) * | 1966-09-29 | 1974-10-25 | Offshore Co | |
| JPS60201224A (en) * | 1984-03-27 | 1985-10-11 | Kyushu Daigaku | Multilayered thin-film heat conduction gauge |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101990062B1 (en) * | 2018-12-07 | 2019-06-17 | 광운대학교 산학협력단 | Resistance change metal oxide based temperature sensor |
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