JPS60229345A - Semiconductor device - Google Patents

Abstract

PURPOSE:To perform a highly reliable wiring at a high speed by a method wherein a necessary wiring is formed on a heat-dissipating insulated substrate, and said wiring is connected to a plurality of electrodes simultaneously. CONSTITUTION:A thin heat-resisting insulating film 11 is formed on one surface of a metal plate 10, and the above is used as a heat-dissipating insulated substrate 12. A plurality of insulated wirings 13 are formed on the film 11. The wiring 13 is extended toward the outer edge of the substrate 12 from the center part, one end of the wiring 12 located on the center part side is corresponded to the pattern electrode formed on a semiconductor pellet 18, the other end located on the outer edge side is corresponded to the external electrode of a lead frame. A ball 14 is formed at both ends of the wiring 13. The substrate 12 is positioned on a pedestal 16 with the film 11, namely, the face where the wiring 13 is formed facing upward. The back side of the pellet 18 is attracted by a pick up 17 which is heated up to a fixed temperature, the pattern forming surface is opposed to the substrate 12, and the electrode of the pellet 18 and one end of the wiring 13 are positioned. The electrode 18 is moved to the direction A as shown in the diagram, and the electrode of the pellet 18 is pressure-welded to one end of the wiring 13.

Description

[Detailed description of the invention] [! ! Ming technology field] The present invention relates to a semiconductor device.

[Background technology of the invention and advantages thereof] In general, semiconductor devices such as semiconductor integrated circuits are manufactured by forming a plurality of independent fc patterns on a semiconductor wafer, and then dividing the fc patterns into pellets each containing one pattern. After the pellet is fixed to the lead frame, the pellet is assembled by electrically connecting the electrode formed on the pellet and the external pole formed on the lead frame. Conventionally, the electrodes formed on the pellet and the external electrodes are connected by a method in which thin gold wires are sequentially pressure-bonded to each electrode using a mechanically operated wire bonding device.
As the density of integrated circuits increases, the number of electrodes increases accordingly, which increases the acetic acid time required to assemble one semiconductor device, making it difficult to maintain balance with previous and subsequent production processes. Of course, progress is being made to increase the speed of this wire bonding device, but with mechanically operated wire bonding devices, the time required per electrode is 0.1
The limit is ~0.15 sec, and it is not very desirable to increase the speed to meet expectations.

On the other hand, as another method for connecting the electrodes of the semiconductor pellet and external electrodes in a short time, a method has been developed in which multiple wired members are used to simultaneously connect the electrodes of the semiconductor pellet to the external electrodes. However, as shown in Figure 1, this method involves forming the wiring (2) on a thin resin film (1) and protruding into the central opening (8) of this thin film (1).
) is thermocompression bonded to the electrode (6) formed on the semiconductor pellet (6) using a thermocompression jig (4), so the film (1) and the wiring (
2) is deformed due to heat.

Furthermore, if the temperature of the hot press jig (4) is lowered in order to avoid this deformation, there is a drawback that sufficient press bonding strength cannot be obtained.

Furthermore, when integrated circuits become denser, there is also the problem that the temperature rises due to the heat generated by each element, resulting in deterioration of characteristics.

[Object of the Invention] The object of the present invention is to provide a method for assembling a semiconductor device and forming a semiconductor device that can perform highly reliable wiring at high speed and is also effective against heat generation.

[Summary of the invention] A wiring pattern of a lead lead having one end at a position corresponding to an electrode of a semiconductor pellet and the other end at a position corresponding to an external electrode of a lead frame etc. is provided on a heat dissipating insulating substrate, and this heat dissipating insulating substrate is provided. While bringing the substrate into close contact with the semiconductor pellet, one end of the wiring is connected to the electrode of the semiconductor pellet.
A semiconductor device is constructed by integrating the M-bond and connecting the other end of the wiring pattern to an external electrode.

[Embodiments of the Invention] The present invention will be described below based on embodiments with reference to the drawings.

First, as shown in FIGS. 2(5) and 2(B), one of the metal plates QOI is made of a good thermal conductor such as aluminum. These multiple wires O8) are connected to a blue heat-proof board □
It extends from the center of □□ toward the outer edge, and one end on the center side of each wiring diagram corresponds to the electrode of the pattern formed on the semiconductor pellet as described later, and the other end on the outer edge corresponds to the lead. Corresponds to the external electrode of the frame. And this wiring Cl
9) A ball with a diameter of 70 to 100 μm and 5 degrees
41 is formed. Such wiring att+Vi,
Usually, it is formed by depositing gold, silver, copper, aluminum, or other metals on the heat-resistant insulating film aη using methods such as plating or vapor deposition, and then removing unnecessary parts by photoetching or the like. (on the balls at both ends) can then be formed by melting and depositing similar metals. Alternatively, the ball may be formed by welding solder.

Next, place the heat-resistant insulating substrate (2) formed as described above on the pedestal ◇6) with the side on which the heat-resistant insulating coating (b), that is, the wiring α, is formed, facing upward, as shown in the figure (C). position on top. Then, with a pickup (17) consisting of a vacuum chuck heated to a constant temperature, the back side of the semiconductor pellet A8) is sucked and the patterned surface is placed facing the heat-resistant insulating substrate T121. The electrode and one end of the wiring (18) formed on the heat-resistant insulating substrate are aligned. In other words, it is arranged so as to serve as an extraction lead for the electrode of the semiconductor pellet μs).
Align QB+. This alignment is done by placing matching marks on the loaf and the heat-resistant insulating substrate (I21 and semiconductor pellet (2)), and by moving the pickup 0 back and forth and left and right, and rotating it around its central axis. This can be done by letting After aligning as above, move in the direction shown by arrow (5),
The above heat-resistant substrate (wiring formed on the wire (semiconductor plate at one end of 181) (18+ electrode is pressed into contact with the semiconductor plate by heating the pink up 07)
Since O8') is also heated, it is thermocompression bonding.

In addition, when performing this crimping, if ultrasonic waves are applied to the pickup 071, it becomes easier to obtain a crimped bond with high bonding strength, and the pickup CI? ) heating temperature can be lowered. By the above-mentioned pressure bonding, the patterned surface of the semiconductor pellet (11601) is brought into close contact with the heat-resistant insulation wave (11601), and is supported by the heat-resistant insulation wave (11601) by the wiring that is pressed into contact with the electrode. If there is any concern about this support, an adhesive may be inserted between the heat-resistant insulating substrate and the semiconductor pellets during the crimping process, and the adhesive may be used to bond them simultaneously with the crimping process.

Next, the semiconductor pellet (g) supported on this heat-resistant insulating substrate is assembled into a heater block shown in (b) ts+.
.

The lead frame (-) is attached using a crimping device consisting of a crimping jig (1). The lead frame has a concave hole into which the lead frame is inserted, and the lead frame is positioned and supported on the lead frame support surface of the heater block, and is heated by the heater block. On the other hand, the crimping jig (roller) has a pick-up terminal made of, for example, a porous gold #i member connected to a vacuum chuck at its tip, and the semiconductor pellet ) A heat-resistant insulating substrate (2) that supports
is suctioned and supported so that it is in close contact with the pickup terminal. First, prior to crimping, the other end of the wiring formed on the heat-resistant insulating substrate θ is aligned with the lead frame (external center, pole 4). This alignment is performed in the same way as the alignment of the semiconductor pellet 08) and the heat-resistant insulating substrate (12+) described above.Then, by applying the crimping jig J4 tall in the direction shown by the arrow (B), As shown by the dashed line in the figure, the other end of the heat-resistant insulating substrate (formed on 121, wiring #o3) is pressed into contact with the external electrode (2) formed on the lead frame. In this case, since the pressure-welded frame is heated, it is thermocompression bonding, similar to the pressure-welding of the semiconductor pellet (g). It is also optional to apply ultrasonic waves during this pressure welding.

Through the above operations, the semiconductor pellet I)7υ is supported by the heat-resistant insulating substrate, and its electrode is connected to the external electrode of the lead frame by the wiring Q81 formed on the heat-resistant insulating substrate. Ru. Therefore, if the product assembled in this way is then sealed with resin to form an integral molded product as shown in Fig. 3, and the external electrodes protruding outside the molded resin are further molded, the required amount can be obtained. can be made into a semiconductor device.

When one semiconductor device is formed as described above, multiple electrodes formed on the semiconductor pellet (G) and wiring QB) can be connected at the same time, and the external electrode (2) and the wiring CI can also be connected at the same time. Compared to the conventional method of connecting electrodes one by one using thin gold wire, it can be assembled in a shorter time.

In addition, the wiring 08) is formed on a heat-resistant insulating substrate so that it does not deform due to heating during pressure welding, so the pressure welding conditions can be adjusted arbitrarily to ensure reliability with sufficient pressure welding strength. In addition, since the heat-resistant insulating substrate (1) is in close contact with the patterned surface of the semiconductor pellet (1) of the assembled semiconductor device, this heat-resistant insulating substrate (1) is Because it has good heat conduction and heat dissipation, even if the number of elements increases and the amount of heat generated increases, such as in a high-density semiconductor integrated circuit, the heat can be quickly dissipated and property deterioration can be prevented.

Furthermore, since this semiconductor device has the same external electrodes as conventional semiconductor devices, it also has a heat-resistant insulating substrate (
121, a large amount of heat can be dissipated from this external electrode.

Furthermore, since this semiconductor device has the same external electrode 1 as the conventional semiconductor device as described above, it can be handled in the same way as the conventional semiconductor device when it is mounted on a wiring board, for example.

Although this invention has been described above using one embodiment (or two), this invention is not limited to the above embodiment, and can be modified in detail without changing the gist thereof.

For example, in the above embodiment, a heat dissipating heat-resistant insulating substrate (
The base) is formed by providing a metal plate fIG rtri thermal insulation coating (9), and the other is a heat dissipating heat-resistant insulating substrate, for example, a ceramic plate with good heat dissipation properties, such as 8iC ceramic, A-ceramic, BeO ceramic, etc. In this case, there is an advantage that the coating step is not necessary. In addition, balls 04) were provided at both ends of the wiring a4 formed on the heat-resistant insulating substrate, but the electrodes of the semiconductor chip and the wiring 08)
This pole may be omitted if connection is possible.

[Effects of the Invention] (1) Since the required wiring is formed on the heat-resistant insulating substrate and the wiring is connected to a plurality of electrodes at the same time, assembly can be completed in a short time.

(2) Since the wiring is formed on a heat-resistant insulating substrate, it will not be deformed by heating during pressure welding, and a highly reliable assembly with sufficient pressure welding strength can be performed.

(81) Since the heat-resistant insulating substrate with good heat dissipation properties is in close contact with the patterned surface of the semiconductor pellet, the heat generated by the semiconductor device can be quickly dissipated, and deterioration of the characteristics of the semiconductor device can be prevented.

(4) Since it has the same external electrodes as conventional semiconductor devices,
A large amount of heat can be dissipated from the external electrode via the heat-resistant insulating substrate.

(5) Since it has the same external electrodes as conventional semiconductor devices,
When mounted on a wiring board or the like, it can be handled in the same way as a conventional semiconductor device.

[Brief explanation of drawings]

FIG. 1 is a diagram for explaining a conventional method for simultaneously connecting a large number of wires to the electrodes of a semiconductor pellet, FIG. 2 is a diagram for explaining the assembly method of the present invention, and FIG. (B) is a cross-sectional view taken along the line nn, (C) is a process diagram for pressure-bonding the wiring formed on the heat-resistant insulating substrate to the electrode of the semiconductor pellet (B). FIG. 3 is a process diagram of press-contacting the wiring formed on the heat-resistant insulating substrate to the external electrode formed on the cut frame, and FIG. 3 is a sectional view of the completed semiconductor device. Beg you...heat resistant 1 board 1sl...for wiring)...
Pole 06)...Pedestal αη...Pickup (G)...Semiconductor pellet wire...Heater block Shout)...Crimping jig--...
Lead frame a! 61... External electrode agent Patent attorney Inoue - Male No. 1 Figure - r - Glue +1'-+': = (Spontaneous) Special a'
+ Office Director '1'l Zhi r'C Gakuden 1, Table of matter A'1 Small Patent Application No. 8404' of 1984, No. g 2, Name of the invention Semiconductor device 3, Famous matter to be amended ('l Relationship with Patent Applicant (307) Toshiba Telephone Co., Ltd. 736-3558 J. On July 7, 11th, (1) Specification, 1: Claims column (2) Specification, Detailed description of the invention in R. Explanation Wa (3) Details-F tl)
H+r+i tl) flfI jli explanation notl
! 46. Contents of the amendment as shown in Attachment jJ original details δ. Revised details above, 1 (1, Name of the invention semiconductor device 2, Claims (1) ↑Corresponding to the 3-order position on 瑯■-烙-Raynaud. ＠ is a wire bar with the other end being a wire bar, and the outer two wires are shells (L deer are a little ζ
- Also, one surface has insulating properties6-#tF:)! ,
'r'X Jtli 41ii person, -sI missing ship-temporary y
f= ;g-Wiring-Two ends of the pattern
The above board! Bokuji? - ΦI correspond to the end of the Me-1, and the secret irrigation work□
A semiconductor device characterized in that it is equipped with a dish that is the best in terms of price. (2) The semiconductor device according to claim 1, wherein the semiconductor device is a substrate. (3) The ``14 barrel device'' according to claim 1, wherein tli, t, [ are constructed of ceramic thin plates. (4) 1. Wiring pattern of the 1st board: - n - Yang - 1/2 g integral - Vereno 1 to rv outside R1S r, '11 bar - one step -
5 - Raw A (The f-stage is super 1.
\ Scope 1 of ``1'', Mind body device. , (, Detailed Description of the Invention [Technical Field of the Invention] This invention relates to a semiconductor device i6. Point] In general, semiconductor devices such as semiconductor integrated circuits are produced by forming multiple independent patterns on a semiconductor wafer, dividing the patterns into pellets each containing one pattern, and fixing the divided pellets to a lead frame. After that, the electrodes formed on the pellets 1 to 1 are assembled by electrically connecting them to the external electrodes formed on the lead frame. Conventionally, the electrodes formed on the pellet and the external electrodes are connected mechanically. This is done by pressing a thin gold wire onto each electrode one after another using a wire bonding machine that operates at high speeds. However, as integrated circuits become denser, the number of electrodes increases accordingly. The wiring time required to assemble a single conductor device becomes longer, making it difficult to maintain balance with the production processes before and after it.Of course, progress is being made to speed up the wire bonding equipment, but stomach,
・For the Tsuya punch ink device, -4 is required per electrode.
The time for the period (
'j'c less than 5t/,I speeding up is not very desirable. One force of this 1-conductor pellet, and 1: Li dotato part electric (・dando 6 other person who connects for a short time /, as lr,
A method has been developed in which multiple wiring members are used to simultaneously connect semiconductor boards 1 to 41.However, this force θ, as shown in FIG.
I) Form wiring (2) on 1, and
The end of the wiring (2) protruding into the medium-heat hole (3) of (1)
), the wiring (2) formed on the fill (1) and the electrode (6) are bonded by thermocompression to the electrode (6). -Easy to deform. Also, in order to avoid this change, if you lower the temperature of the heat-pressing jig (4), the temperature will be lowered! The disadvantage is that the contact strength cannot be obtained. Furthermore, when the droplet accumulation circuit becomes denser, the temperature rises due to the emission λも of each cable r, which causes the problem of deterioration of the temperature. [Purpose of the Invention] The present invention provides a semiconductor device (F°1) that enables highly reliable wiring at high speed and is also effective against heat generation.
(assembly) to form a semiconductor device and a semiconductor device. [Summary of the Invention] A wiring pattern of a lead lead is provided on a heat-resistant substrate, with one end at a position corresponding to an electrode to a semiconductor bellet 1 and the other end at a position corresponding to an external electrode of a lead flare 1, etc. A heat-resistant substrate is brought into close contact with the semiconductor pellet, one end of the wiring pattern is brought into close contact with the electrode of the conductive pellet, and the other end of the wiring pattern is brought into close contact with an external electrode to form a semiconductor device. [Embodiments of the Invention] The present invention will be described below based on embodiments with reference to the drawings. First, as shown in FIGS. 2(A) and 2(B), one side of a metal plate (lO) made of a good heat conductor such as aluminum is covered with eight thin heat-resistant insulators (11) made of alumina or the like.
A plurality of wires (+3) insulated from each other are formed on the heat-resistant insulating film (II) l-. These multiple wires (
Ml) extends from the medium heat part of the heat-dissipating insulating board (12) toward the outer edge, and extends from the middle part side of each wiring (12).
The ends correspond to the electrodes of the pattern formed on the semiconductor pereno 1 to 1 as described later, and the other end on the outer edge side corresponds to the external electrode of the beam frame. Balls (14) having a diameter of 70-100 p +nJ'W degrees are formed at both ends of this wiring (13). Wiring like this (13)
Usually, a thin film is formed by depositing gold, silver, copper, aluminium 11, or other metals on the above-mentioned ripening-resistant material (11) by plating, Kuroishi method, etc., and then photo-etching, etc. The balls (14) at both ends can then be formed by melting and attaching similar full bends. The ball (14) may also be formed by welding solder. Next, heat dissipation 18H +, (plate (
12) with a heat-resistant insulation coating (11) as shown in Figure (C).
) Position it on the pedestal (Ifi) with the surface on which the wiring (13) is formed as 1-. And constant temperature J,
A pickup (17) consisting of a vacuum 11 chuck heated to
1. Wiring formed on the board (12) (1
3) Align with one end. That is, semi-Ig Vereso l-
The wiring (13
). This alignment is performed, for example, with the heat dissipating insulating substrate (12). This can be done by providing the conductive bevel 7h (18) and the bevel 7h (18) at the reference mark, moving the pickup (17) back and forth, left and right, and rotating it around its central axis to match. After aligning the semiconductor pellet as shown in the figure, move it in the direction shown by the arrow (A). 18) Press the electrodes. This bar welding is thermocompression bonding because the semiconductor pellet (+g>) is also heated by the heating of the pickup (17).In addition, if ultrasonic waves are applied to the pickup (17) during this pressure bonding, the bonded strong melon It becomes easier to obtain a high value of 2'1, and the addition of the pickup (17) can be increased by X degrees.
- (18) The pattern forming surface has lost its durability.
Emitted by the wiring that is in close contact with the electrode (11) and is pressed into contact with the electrode:
(!-Supported by the irresistible substrate (12).If this support has a certain degree of stability, the heat dissipation insulation during crimping is 11°JJ, (12) and the semiconductor pellets 1 to (18) ), and at the same time as crimping, connect with adhesive λ1.
You may also do so. Next, the A conductor pellet l-(+8) supported on this heat dissipating insulating substrate (12) is leaded using a crimping device consisting of a heater block (20) and a crimping jig (21) shown in figure (1)). Attach to frame A (22). ”-The heater block (20) has a 111f portion on the lead frame support surface that protrudes from the plate surface of the heat dissipation insulating substrate (12).
The lead frame (22) has a concave hole (23) into which a single beleno h (18) is inserted, and the lead frame (22)
0) The glue frame is positioned and supported on the support surface and heated by the heater block (22). Force, L + i 7i JL (21) has a pink-up end J'- (25) made of, for example, a porous fully bent member connected to a vacuum chuck (24) at its tip, and ~(18) is this ゛1′,
A heat dissipating insulating substrate (12) supporting the core pellet (18)
) is suction-supported so as to be in close contact with the pickup terminal (25). First, before crimping, a heat dissipating insulating substrate (12
) and the other end of the wiring (13) formed on the lead frame (
22) Perform alignment with the external electrode (26). This alignment is performed in the same manner as the alignment of the semiconductor pellet (18) and the heat dissipating insulating substrate (12) described above. Then, move the crimping jig (21) in the direction shown by the arrow (B), and lead the other end of the wiring (13) formed on the heat dissipating insulating substrate (12) as shown by the dashed line in the figure. It is pressed into contact with an external electrode (26) formed on the frame (22). Since the lead frame (22) is heated, the pressure bonding in this case is also thermocompression bonding, similar to the pressure bonding of the semiconductor pellet (18). It is also optional to apply ultrasonic waves during this crimping. Through the above operations, the semiconductor pellet (18) is supported by the heat dissipating insulating substrate (12), and its electrical conductor (4) is supported by the wiring (13) formed on the heat dissipating insulating substrate (12).
Then, connect the external mold of the lead frame (22) to the (23). Therefore, as shown in FIG. 3, the thus-produced product is sealed with resin to form a C-shaped molded product (28), and furthermore, the external electrode (28) protruding outside the molded resin is By molding 26), it is possible to obtain the required 1'-kissing device. When a semiconductor device is formed as described in item 1 of ``17: A plurality of electrodes and wirings (13
) can be connected at the same time, and the external electrode (26)
and wiring (13) can be connected at the same time 1)
), it can be assembled in a shorter time than the conventional method, which uses thin gold wire to connect the electrodes one by one. In addition, wiring (Ill) is formed on the heat dissipating insulating substrate (12) so that it does not deform due to heating during pressure bonding. Therefore, the pressure welding conditions are set to 1.
It is possible to perform a reliable assembly with sufficient pressure 11' and strength. In addition, for the assembled ``1'' conductor device, 1'J
'9 body/Reno 1~(18) pattern shape 1i (and heat radiation extinction 1゜) 1 (handling (12) or dense, ri, so this radiation, B7. Insulating substrate (12)? S:, also conduction, emission::, is it good for 1゛,, for example, if the ratio is high, q weight, like the In circuit, y + 3]' A:: more will be generated: i%:,: , or increase Ct, its ripeness is Tsuji/J
It is possible to prevent the ``1'' conductor device and the rotary external electrode (6), which has been conventionally used. Therefore, this external type IJi (2
6) It is possible to emit a large amount of ripeness. In addition, this semiconductor device is different from the conventional "l" as described above.
By using the same external type 14i (26) as the H9 body device, when mounting it on a wiring board, it can be handled in the same way as a conventional ¥-conductor device. However, the present invention is not limited to the above embodiments, and can be modified in various ways without changing the gist thereof. For example, in the above embodiment, the heat dissipating insulating substrate (12
) was formed by providing a heat-resistant insulating coating (11) on a metal plate (10), but heat radiation*1; J, t・ttsuhe,・tam (nos example, ′. is SIC gerami nok, A haserami,)′ノ, 11(・0
It can also be formed with Senohenoku, etc., and this 'j4
r＞? , ',2 i'': i l', J's' has the effect of being unnecessary, and h', '?: 'f(2:
'i1 dimension 1' 1 (, (,! Wiring formed in (12)
II) If a hole (14) is provided in 0/11+饅i+j, or if it is possible to connect the electrode of the semiconductor chip and the wiring (Ill), this ball can be omitted and put in t+. [9-jJ results of the invention] (1) Forming new wiring on a heat-dissipating insulating board,
Since this wiring is connected to a plurality of electrodes at the same time, it can be assembled in a short time. (2) Since the wiring is formed on a heat-resistant insulating substrate, it does not deform when heated during welding, and can be assembled in a highly reliable manner in just one minute. (3) Since the heat-resistant insulating substrate with good heat dissipation properties is in close contact with the patterned surface of the conductor pellet, the heat generated by the semiconductor device can be quickly dissipated. Deterioration can be prevented. 3 (4) Since the external electrodes are made of the same material as conventional semiconductor devices, heat dissipation and insulation properties are improved.
It is possible to dissipate heat from the external electrode through the plate (,5).
Therefore, when mounted on a wiring board or the like, it can be handled in the same way as a conventional Tη body device.・1. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a diagram for explaining a conventional method for simultaneously connecting a large number of wiring lines to the electrodes of a semiconductor periphery 1-, and FIG. 2 is a diagram for explaining an assembly method according to the present invention. ) The figure shows the heat dissipation insulation with wiring formed, (temporary plan view, (B) figure shows its ■
- Cross-sectional view on line B, (C) is semiconductor Pelle, WJ of 71~,
Figure (D) is a process diagram of pressing the wiring formed on the heat dissipating insulating board to the external electrode formed on the lead frame. 3
The figure is a cross-sectional view of the completed instep and conductor 1.1 to 1. (12) Heat dissipation insulation J1 (board (13) Wiring (14) Pole (16) Pedestal (17) Pickup (I8) Semiconductor pellet (2
0)... Heater block (21), 17', mounting jig (
22) Lead frame (26)・External electrode agent
Patent attorney Inoue - Male

Claims (1)

[Scope of Claims] (1) A heat dissipating insulating substrate provided with a wiring pattern, and a semiconductor pellet having the heat dissipating insulating substrate tightly integrated so that the wiring pattern of the heat dissipating insulating substrate becomes a lead. A semiconductor device comprising: (2) The semiconductor device according to claim 1, in which the heat dissipating insulating substrate is formed on a thermally good conductor (with two insulating cores). (8) The heat dissipating insulating substrate is constituted by a ceramic thin plate. The semiconductor device according to claim 1. (4) The semiconductor device according to claim 1, which has a structure in which an external electrode is connected to the lead-out lead.