JPS60228637A - Co alloy for magnetic recording medium - Google Patents
Co alloy for magnetic recording mediumInfo
- Publication number
- JPS60228637A JPS60228637A JP59081992A JP8199284A JPS60228637A JP S60228637 A JPS60228637 A JP S60228637A JP 59081992 A JP59081992 A JP 59081992A JP 8199284 A JP8199284 A JP 8199284A JP S60228637 A JPS60228637 A JP S60228637A
- Authority
- JP
- Japan
- Prior art keywords
- alloy
- magnetic recording
- recording medium
- elements
- target
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910000531 Co alloy Inorganic materials 0.000 title abstract 3
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 17
- 239000000956 alloy Substances 0.000 claims abstract description 17
- 229910052768 actinide Inorganic materials 0.000 claims abstract description 5
- 150000001255 actinides Chemical class 0.000 claims abstract description 5
- 229910052745 lead Inorganic materials 0.000 claims abstract description 4
- 229910052748 manganese Inorganic materials 0.000 claims abstract description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 4
- 229910052702 rhenium Inorganic materials 0.000 claims abstract description 4
- 229910052713 technetium Inorganic materials 0.000 claims abstract description 4
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 4
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 3
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 3
- 229910052718 tin Inorganic materials 0.000 claims abstract description 3
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 3
- 229910052747 lanthanoid Inorganic materials 0.000 claims description 4
- 150000002602 lanthanoids Chemical class 0.000 claims description 4
- 229910052957 realgar Inorganic materials 0.000 claims 1
- 239000000203 mixture Substances 0.000 abstract description 5
- 238000005477 sputtering target Methods 0.000 abstract description 4
- 229910052787 antimony Inorganic materials 0.000 abstract description 3
- 229910052785 arsenic Inorganic materials 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 229910052737 gold Inorganic materials 0.000 abstract description 2
- 229910052738 indium Inorganic materials 0.000 abstract description 2
- 229910052759 nickel Inorganic materials 0.000 abstract description 2
- 229910052763 palladium Inorganic materials 0.000 abstract description 2
- 229910052711 selenium Inorganic materials 0.000 abstract description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- 229910052725 zinc Inorganic materials 0.000 abstract description 2
- 229910000599 Cr alloy Inorganic materials 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 229910052793 cadmium Inorganic materials 0.000 abstract 1
- 229910052791 calcium Inorganic materials 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 229910052804 chromium Inorganic materials 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- 229910052741 iridium Inorganic materials 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- 229910052706 scandium Inorganic materials 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 229910052714 tellurium Inorganic materials 0.000 abstract 1
- 229910052716 thallium Inorganic materials 0.000 abstract 1
- 230000005415 magnetization Effects 0.000 description 9
- 239000010408 film Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 230000002265 prevention Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 229910005898 GeSn Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Landscapes
- Paints Or Removers (AREA)
- Magnetic Record Carriers (AREA)
- Thin Magnetic Films (AREA)
Abstract
Description
【発明の詳細な説明】 〔発明の技術分野〕 本発明は、磁気記録媒体用OO基合金に関する。[Detailed description of the invention] [Technical field of invention] The present invention relates to an OO-based alloy for magnetic recording media.
一般に磁気ディスク、フロッピーディスクオーディオ用
磁気テープ、VTR用磁気テープ、磁気写真用ディスク
、さらにコンピュータ用磁気テープなどに、プラスティ
ックフィルムや金属シート等の基体の表面にOo −O
r合金薄膜を形成した垂直磁気記録媒体を使うことが試
みられている。Generally, magnetic disks, floppy disks, magnetic tapes for audio, magnetic tapes for VTRs, magnetic photographic disks, and even magnetic tapes for computers are coated with Oo-O on the surface of a substrate such as a plastic film or metal sheet.
Attempts have been made to use perpendicular magnetic recording media formed with r-alloy thin films.
このOo −Or合金の磁気記録媒体は、大きな磁気異
方性と飽和磁化をもつことから、薄膜化しても信号レベ
ルを保持しやすく、特に垂直磁化膜用として開発されて
いるものである。Since this Oo-Or alloy magnetic recording medium has large magnetic anisotropy and saturation magnetization, it is easy to maintain a signal level even when the film is made thin, and has been developed particularly for use in perpendicularly magnetized films.
この薄膜を形成する方法として、スパッタリング法があ
る。これは、不活性ガス雰囲気(例えばAr)中で、O
o −Or合金を陰極とし、この陰極を不活性ガス陽イ
オンでたたくことにより、OQ原子+ Or原子を飛び
出させ、基板を被覆する方法である。A sputtering method is a method for forming this thin film. This is done in an inert gas atmosphere (e.g. Ar) with O
This method uses an o -Or alloy as a cathode and hits the cathode with inert gas cations to eject OQ atoms + Or atoms to coat the substrate.
しかし、スパッタリング法によりOo −Or合金(以
下、ターゲットと称す)をスパツタしている膜中、ター
ゲットにクラックが入ることがあった。このようにター
ゲットにクラックが入ると、スパッタに異常を生じ、不
均一なOo −Or被檀膜ができやすく、さらにはター
ゲットボンディング用半田成分が膜中に混入するという
問題が起る場合があった。However, in a film sputtered using an Oo-Or alloy (hereinafter referred to as a target) using a sputtering method, cracks may occur in the target. If the target cracks in this way, sputtering may become abnormal, a non-uniform Oo-Or film may be formed, and furthermore, solder components for target bonding may be mixed into the film. Ta.
しかも、こうした傾向はスパッタ速度を増加させたマグ
ネトロンスパッタ法においてより顕著である。Furthermore, this tendency is more pronounced in the magnetron sputtering method in which the sputtering speed is increased.
更に最近スパッタリングの量産化に向け、更に大型のタ
ーゲットが望まれているが、このようにターゲットが大
型化した場合も、この問題は顕著であった。一方、Oo
−Or合金は、大型化しようとしても加工性が悪く、
大型が困難であり、歩留りも低くかった。Furthermore, even larger targets have recently been desired for mass production of sputtering, and this problem has been significant even when the targets have become larger. On the other hand, Oo
-Or alloy has poor workability even if you try to make it larger.
It was difficult to produce large-sized products, and the yield was low.
本発明は、スパッタリングターゲットとして、クラック
が生じにくく、かつ加工性が良好なCO−Orr合金提
供することを目的とする。An object of the present invention is to provide a CO-Orr alloy that is less prone to cracking and has good workability as a sputtering target.
〔発明の概要〕
本発明は、上記目的を達成する為、Orを9、0〜22
.5重量%含有させ、Sc、V。[Summary of the Invention] In order to achieve the above object, the present invention provides Or of 9, 0 to 22.
.. Containing 5% by weight, Sc, V.
N b 、 T a 、 W 、 M n 、 T c
、 Re 、 F e 。Nb, Ta, W, Mn, Tc
, Re, Fe.
0atIr、Nt+Pa+PtsOusAgAusZr
、Oct、B、Al、Oa、In。0atIr, Nt+Pa+PtsOusAgAusZr
, Oct., B., Al., Oa., In.
TA!、O,Si、Go、8n+Pb、P。TA! , O, Si, Go, 8n+Pb, P.
As、Sb、Bi、S、Se、Tθ、ランタノイド元素
及びアクチノイド元素から選択された1種又は2種以上
の元素を0.001〜5重量%含有させ、残部が実質的
にCOである磁気記録媒体用CO基合金を提供する。Magnetic recording containing 0.001 to 5% by weight of one or more elements selected from As, Sb, Bi, S, Se, Tθ, lanthanide elements, and actinide elements, and the balance being substantially CO. A CO-based alloy for media is provided.
ここで、この発明の00基合金において成分組成範囲を
上記の通りに限定した理由を説明する。Here, the reason why the composition range of the 00 group alloy of the present invention is limited as described above will be explained.
(1)Or酸成分
Or酸成分こけ、飽和磁化を実用範囲である80〜85
0ガウスに調整する作用がある。その含有量が多すぎる
と、十分な飽和磁化が得られに<<、一方その含有量が
少=3−
なすぎると、飽和磁化が850ガウス以上となりやすい
、したがって、Orの成分範囲は、9.0〜225%、
更には12〜22.5%、更には14〜22%が好まし
い。(1) Or acid component Or acid component moss, saturation magnetization is 80 to 85, which is the practical range
It has the effect of adjusting to 0 Gauss. If the content is too large, sufficient saturation magnetization cannot be obtained. On the other hand, if the content is too small, the saturation magnetization tends to exceed 850 Gauss. Therefore, the component range of Or is 9 .0~225%,
More preferably, it is 12 to 22.5%, and even more preferably 14 to 22%.
以上、説明した飽和磁化に関して、その値として、80
〜850ガウス必要なのは飽和磁化が太きすぎると、例
えば垂直磁化膜として使用した場合、膜面に垂直の磁化
配向を得にくく、一方飽和磁化が小さすぎると、再生出
力が小さくなり、87N比が悪化して実用に供し得なく
なりやすい為である。Regarding the saturation magnetization explained above, its value is 80
~850 Gauss is necessary because if the saturation magnetization is too thick, for example, when used as a perpendicular magnetization film, it will be difficult to obtain a magnetization orientation perpendicular to the film surface.On the other hand, if the saturation magnetization is too small, the reproduction output will be small and the 87N ratio will be This is because it is likely to deteriorate and become unusable.
(2) S c + V 、N b 、T a + W
t M n + ’II’ cRe、Fe、Os、I
r、Ni、Pd。(2) S c + V, N b, T a + W
t M n + 'II' cRe, Fe, Os, I
r, Ni, Pd.
Pt、Ou、Ag、Au、Zn、Od、Bi7.Oa、
In、Tl+0.81.GeSn、Pb、PtAtz8
b+Bi +S+8e、Tθ、ランタノイド元素及びア
クチノイド元素:
これらの元素は、Oo −Or合金の加工4−
性を向上させ、かつターゲットに生じるクラックを発生
させにくくさせるが、含有量が多すぎると、加工性磁気
特性及びクランク発生防止率を低下させ、一方、少なす
ぎると、その効果が低下する。したがって、上記元素群
から選択された1種又は2種以上の元素の含有量は、0
.001〜5重t%更にけo、 o l、−/i量%、
更に0.1〜2重量%が好ましい。Pt, Ou, Ag, Au, Zn, Od, Bi7. Oa,
In, Tl+0.81. GeSn, Pb, PtAtz8
b+Bi +S+8e, Tθ, lanthanide elements and actinide elements: These elements improve the workability of the Oo-Or alloy and make it difficult to generate cracks in the target, but if their content is too high, the workability It lowers the magnetic properties and the cranking prevention rate, and on the other hand, if it is too small, the effect decreases. Therefore, the content of one or more elements selected from the above element group is 0.
.. 001 to 5 weight t%, and o, o l, -/i amount%,
Further, 0.1 to 2% by weight is preferred.
次に本発明について、実施例を用いて説明する。 Next, the present invention will be explained using examples.
通常の溶解鋳造法により、それぞれ表に示される成分組
成をもった本発明00基合金1〜5及び比較CO基合金
1及び2の鋳塊をそれぞれ調製し、ついでこれらの鋳塊
から表に示す如く、スパッタリング用ターゲットを作製
した。その際、加工性及び歩留りが調べられた。引き続
いて、これらのターゲットを用い雰囲気+、 A r
r雰囲気圧力ニ5X10 torrの条件でDoマグネ
トロンスパッタリングを行ない、厚さ10μmのポリエ
ステルフィルム基体の表面に実質的lこ合金組成と同一
の成分組成をもつ厚さ約0.5μmの磁気記録媒体とし
ての薄膜を形成した。電力投入量は約5w / crd
とした。この際、ターゲットのクラック発生率が試料1
00個に対して調べられた。Ingots of the 00-based alloys 1 to 5 of the present invention and comparative CO-based alloys 1 and 2 having the compositions shown in the table were prepared by a normal melting and casting method, and then from these ingots the ingots shown in the table were prepared. A sputtering target was prepared as described above. At that time, processability and yield were investigated. Subsequently, using these targets, atmosphere +, A r
Do magnetron sputtering was performed under the conditions of an atmospheric pressure of 5 x 10 torr to form a magnetic recording medium of approximately 0.5 μm in thickness having substantially the same composition as the alloy composition on the surface of a 10 μm thick polyester film substrate. A thin film was formed. Power input is approximately 5w/crd
And so. At this time, the crack occurrence rate of the target was
00 items were investigated.
以下余白
この表から明らかな如く、本発明の実施例は、比較例に
比べて、加工性及びクラック防止効果が高く、量産化に
有効な方法となる。As is clear from this table, the examples of the present invention have higher workability and crack prevention effects than the comparative examples, and are an effective method for mass production.
又、ターゲットが大型化しても、加工性及びクラック防
止効果が高い。Furthermore, even if the target becomes larger, the workability and crack prevention effect are high.
本発明は、CO基合金に、Orを9.0〜22.5重量
%含有させ、8 c s V r N b *T a
、 W 、 M n 、 T c 、 Re 、 F
e 、 Os 。In the present invention, a CO-based alloy contains 9.0 to 22.5% by weight of Or, and 8 c s V r N b *T a
, W, Mn, Tc, Re, F
e, Os.
I r+ N i 、* P d r P t * O
u + A g + A uZn、Od、B、A1.O
a、In、T/。I r+ N i , * P d r P t * O
u + A g + A uZn, Od, B, A1. O
a, In, T/.
0 、81 、 G o 、 S n 、 P b 、
P 、 A s 。0, 81, Go, Sn, Pb,
P, As.
Sb、Bi、8.8e 、Te、ランタノイド元素及び
アクチノイド元素から選択された1種又は2種以上の元
素を0.001〜5重量%含有させることにより、クラ
ックが生じにくく、かつ加工性が良好な磁気記録媒体用
C。By containing 0.001 to 5% by weight of one or more elements selected from Sb, Bi, 8.8e, Te, lanthanide elements, and actinide elements, cracks are less likely to occur and workability is good. C for magnetic recording media.
基合金を提供できる。We can provide base alloys.
代理人弁理士 則 近 憲 佑Representative Patent Attorney Noriyuki Chika
Claims (1)
、Nb、Ta、W、Mn、Tc、Re、Fe0ssIr
tNitPa*Pt+Ou、Ag*A u 、 Z n
、 Oet 、 B a A It 、 Oa 、
I n 。 TJ、0eSi 、Go、Sn、Pb、P、AsS b
、 B i 、 S 、 S e 、 T o 、ラ
ンタノイド元素及びアクチノイド元素から選択された1
種又Fi2種以上の元素を0.001〜5重量%含有さ
せ、残部が実質的にOoである磁気記録媒体用00基合
金。[Claims] Contains 9.0 to 22.5% by weight of Or, and 8 c +V
, Nb, Ta, W, Mn, Tc, Re, Fe0ssIr
tNitPa*Pt+Ou, Ag*A u , Z n
, Oet , B a A It , Oa ,
In. TJ, 0eSi, Go, Sn, Pb, P, AsS b
, B i , S , S e , T o , 1 selected from lanthanide elements and actinide elements
A 00 group alloy for magnetic recording media, containing 0.001 to 5% by weight of two or more elements, the remainder being substantially Oo.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59081992A JPS60228637A (en) | 1984-04-25 | 1984-04-25 | Co alloy for magnetic recording medium |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59081992A JPS60228637A (en) | 1984-04-25 | 1984-04-25 | Co alloy for magnetic recording medium |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS60228637A true JPS60228637A (en) | 1985-11-13 |
Family
ID=13761968
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59081992A Pending JPS60228637A (en) | 1984-04-25 | 1984-04-25 | Co alloy for magnetic recording medium |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60228637A (en) |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS611004A (en) * | 1984-06-13 | 1986-01-07 | Mitsubishi Electric Corp | Cocr vertical magnetic recording medium |
JPS6339122A (en) * | 1986-08-01 | 1988-02-19 | Hitachi Ltd | Magnetic recording medium |
JPS6396259A (en) * | 1986-10-09 | 1988-04-27 | Mitsui Eng & Shipbuild Co Ltd | Co-cr alloy for vapor deposition |
JPS63100149A (en) * | 1986-10-14 | 1988-05-02 | Mitsui Eng & Shipbuild Co Ltd | Fe-co-base alloy for vapor deposition |
US6129981A (en) * | 1998-02-20 | 2000-10-10 | Fujitsu Limited | Magnetic recording medium and magnetic recording disk device |
WO2000070106A1 (en) * | 1999-05-14 | 2000-11-23 | Fuji Electric Co., Ltd. | Magnetic alloy and magnetic recording medium and method for preparation thereof, and target for forming magnetic film and magnetic recording device |
US6583958B1 (en) | 1999-11-18 | 2003-06-24 | Hitachi, Ltd. | Magnetic recording medium and magnetic storage system using same |
KR100390391B1 (en) * | 2001-01-31 | 2003-07-07 | 한국과학기술연구원 | Alloy Compositions for Base Layer of High Density Longitudinal Magnetic Recording Media |
US7435485B2 (en) * | 2004-06-29 | 2008-10-14 | Sony Corporation | Magnetic material, and a MEMS device using the magnetic material |
CN102194472A (en) * | 2011-03-07 | 2011-09-21 | 南通万宝实业有限公司 | Super high-density perpendicular magnetic recording magnetic film and preparation method thereof |
RU2647955C1 (en) * | 2017-07-11 | 2018-03-21 | Юлия Алексеевна Щепочкина | Sintered cobalt-based antifriction material |
TWI642800B (en) * | 2017-10-03 | 2018-12-01 | 光洋應用材料科技股份有限公司 | Co-pt-re-based sputtering target, method of making the same, and magnetic recording layer |
CN109022927A (en) * | 2018-10-05 | 2018-12-18 | 广州宇智科技有限公司 | A kind of water surface ship and the corrosion-resistant cobalt alloy for having excellent casting character of submarine |
CN109022928A (en) * | 2018-10-05 | 2018-12-18 | 广州宇智科技有限公司 | A kind of solar energy thermal-power-generating salt melting system erosion resistant foundry cobalt alloy and its technique |
CN111566253A (en) * | 2018-08-09 | 2020-08-21 | Jx金属株式会社 | Sputtering target and magnetic film |
CN112585295A (en) * | 2018-08-09 | 2021-03-30 | Jx金属株式会社 | Sputtering target, magnetic film, and perpendicular magnetic recording medium |
-
1984
- 1984-04-25 JP JP59081992A patent/JPS60228637A/en active Pending
Cited By (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS611004A (en) * | 1984-06-13 | 1986-01-07 | Mitsubishi Electric Corp | Cocr vertical magnetic recording medium |
JPS6339122A (en) * | 1986-08-01 | 1988-02-19 | Hitachi Ltd | Magnetic recording medium |
JPS6396259A (en) * | 1986-10-09 | 1988-04-27 | Mitsui Eng & Shipbuild Co Ltd | Co-cr alloy for vapor deposition |
JPH041054B2 (en) * | 1986-10-09 | 1992-01-09 | Mitsui Shipbuilding Eng | |
JPS63100149A (en) * | 1986-10-14 | 1988-05-02 | Mitsui Eng & Shipbuild Co Ltd | Fe-co-base alloy for vapor deposition |
JPH0430451B2 (en) * | 1986-10-14 | 1992-05-21 | ||
US6129981A (en) * | 1998-02-20 | 2000-10-10 | Fujitsu Limited | Magnetic recording medium and magnetic recording disk device |
US6607612B1 (en) | 1999-05-14 | 2003-08-19 | Migaku Takahashi | Magnetic alloy and magnetic recording medium and method for preparation thereof, and target for forming magnetic film and magnetic recording device |
WO2000070106A1 (en) * | 1999-05-14 | 2000-11-23 | Fuji Electric Co., Ltd. | Magnetic alloy and magnetic recording medium and method for preparation thereof, and target for forming magnetic film and magnetic recording device |
CN1108390C (en) * | 1999-05-14 | 2003-05-14 | 高桥研 | Magnetic alloy and magnetic recording medium and method for preparation thereof, and target for forming magnetic film and magnetic recording device |
US6583958B1 (en) | 1999-11-18 | 2003-06-24 | Hitachi, Ltd. | Magnetic recording medium and magnetic storage system using same |
KR100390391B1 (en) * | 2001-01-31 | 2003-07-07 | 한국과학기술연구원 | Alloy Compositions for Base Layer of High Density Longitudinal Magnetic Recording Media |
US7435485B2 (en) * | 2004-06-29 | 2008-10-14 | Sony Corporation | Magnetic material, and a MEMS device using the magnetic material |
US8303794B2 (en) | 2004-06-29 | 2012-11-06 | Sony Corporation | Magnetic material, and a MEMS device using the magnetic material |
CN102194472A (en) * | 2011-03-07 | 2011-09-21 | 南通万宝实业有限公司 | Super high-density perpendicular magnetic recording magnetic film and preparation method thereof |
RU2647955C1 (en) * | 2017-07-11 | 2018-03-21 | Юлия Алексеевна Щепочкина | Sintered cobalt-based antifriction material |
TWI642800B (en) * | 2017-10-03 | 2018-12-01 | 光洋應用材料科技股份有限公司 | Co-pt-re-based sputtering target, method of making the same, and magnetic recording layer |
CN111566253A (en) * | 2018-08-09 | 2020-08-21 | Jx金属株式会社 | Sputtering target and magnetic film |
CN112585295A (en) * | 2018-08-09 | 2021-03-30 | Jx金属株式会社 | Sputtering target, magnetic film, and perpendicular magnetic recording medium |
US11894221B2 (en) | 2018-08-09 | 2024-02-06 | Jx Metals Corporation | Sputtering target and magnetic film |
CN109022927A (en) * | 2018-10-05 | 2018-12-18 | 广州宇智科技有限公司 | A kind of water surface ship and the corrosion-resistant cobalt alloy for having excellent casting character of submarine |
CN109022928A (en) * | 2018-10-05 | 2018-12-18 | 广州宇智科技有限公司 | A kind of solar energy thermal-power-generating salt melting system erosion resistant foundry cobalt alloy and its technique |
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