JPS60228637A - Co alloy for magnetic recording medium - Google Patents

Co alloy for magnetic recording medium

Info

Publication number
JPS60228637A
JPS60228637A JP59081992A JP8199284A JPS60228637A JP S60228637 A JPS60228637 A JP S60228637A JP 59081992 A JP59081992 A JP 59081992A JP 8199284 A JP8199284 A JP 8199284A JP S60228637 A JPS60228637 A JP S60228637A
Authority
JP
Japan
Prior art keywords
alloy
magnetic recording
recording medium
elements
target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59081992A
Other languages
Japanese (ja)
Inventor
Reiji Nishikawa
西川 羚二
Kenichiro Momose
百瀬 建一郎
Kiyoshi Nagasaki
潔 長崎
Noriaki Yagi
典章 八木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP59081992A priority Critical patent/JPS60228637A/en
Publication of JPS60228637A publication Critical patent/JPS60228637A/en
Pending legal-status Critical Current

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  • Paints Or Removers (AREA)
  • Magnetic Record Carriers (AREA)
  • Thin Magnetic Films (AREA)

Abstract

PURPOSE:To obtain the titled alloy which is hardly cracked and has high workability when used as a sputtering target by adding a small amount of a specified element to a Co-Cr alloy having a specified composition. CONSTITUTION:This Co alloy for a magnetic recording medium consists of 9.0- 22.5wt% Cr, 0.001-5wt% one or more kinds of elements selected among Sc, V, Nb, Ta, W, Mn, Tc, Re, Fe, Os, Ir, Ni, Pd, Pt, Cu, Ag, Au, Zn, Cd, B, Al, Ca, In, Tl, C, Si, Ge, Sn, Pb, P, As, Sb, Bi, S, Se, Te, lathanoids and actinoids, and the balance Co. When the Co alloy is used as a sputtering target, it is hardly cracked, has high workability, is easily increased in size, and is suitable for mass production.

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は、磁気記録媒体用OO基合金に関する。[Detailed description of the invention] [Technical field of invention] The present invention relates to an OO-based alloy for magnetic recording media.

〔発明の技術的背景及びその問題点〕[Technical background of the invention and its problems]

一般に磁気ディスク、フロッピーディスクオーディオ用
磁気テープ、VTR用磁気テープ、磁気写真用ディスク
、さらにコンピュータ用磁気テープなどに、プラスティ
ックフィルムや金属シート等の基体の表面にOo −O
r合金薄膜を形成した垂直磁気記録媒体を使うことが試
みられている。
Generally, magnetic disks, floppy disks, magnetic tapes for audio, magnetic tapes for VTRs, magnetic photographic disks, and even magnetic tapes for computers are coated with Oo-O on the surface of a substrate such as a plastic film or metal sheet.
Attempts have been made to use perpendicular magnetic recording media formed with r-alloy thin films.

このOo −Or合金の磁気記録媒体は、大きな磁気異
方性と飽和磁化をもつことから、薄膜化しても信号レベ
ルを保持しやすく、特に垂直磁化膜用として開発されて
いるものである。
Since this Oo-Or alloy magnetic recording medium has large magnetic anisotropy and saturation magnetization, it is easy to maintain a signal level even when the film is made thin, and has been developed particularly for use in perpendicularly magnetized films.

この薄膜を形成する方法として、スパッタリング法があ
る。これは、不活性ガス雰囲気(例えばAr)中で、O
o −Or合金を陰極とし、この陰極を不活性ガス陽イ
オンでたたくことにより、OQ原子+ Or原子を飛び
出させ、基板を被覆する方法である。
A sputtering method is a method for forming this thin film. This is done in an inert gas atmosphere (e.g. Ar) with O
This method uses an o -Or alloy as a cathode and hits the cathode with inert gas cations to eject OQ atoms + Or atoms to coat the substrate.

しかし、スパッタリング法によりOo −Or合金(以
下、ターゲットと称す)をスパツタしている膜中、ター
ゲットにクラックが入ることがあった。このようにター
ゲットにクラックが入ると、スパッタに異常を生じ、不
均一なOo −Or被檀膜ができやすく、さらにはター
ゲットボンディング用半田成分が膜中に混入するという
問題が起る場合があった。
However, in a film sputtered using an Oo-Or alloy (hereinafter referred to as a target) using a sputtering method, cracks may occur in the target. If the target cracks in this way, sputtering may become abnormal, a non-uniform Oo-Or film may be formed, and furthermore, solder components for target bonding may be mixed into the film. Ta.

しかも、こうした傾向はスパッタ速度を増加させたマグ
ネトロンスパッタ法においてより顕著である。
Furthermore, this tendency is more pronounced in the magnetron sputtering method in which the sputtering speed is increased.

更に最近スパッタリングの量産化に向け、更に大型のタ
ーゲットが望まれているが、このようにターゲットが大
型化した場合も、この問題は顕著であった。一方、Oo
 −Or合金は、大型化しようとしても加工性が悪く、
大型が困難であり、歩留りも低くかった。
Furthermore, even larger targets have recently been desired for mass production of sputtering, and this problem has been significant even when the targets have become larger. On the other hand, Oo
-Or alloy has poor workability even if you try to make it larger.
It was difficult to produce large-sized products, and the yield was low.

〔発明の目的〕[Purpose of the invention]

本発明は、スパッタリングターゲットとして、クラック
が生じにくく、かつ加工性が良好なCO−Orr合金提
供することを目的とする。
An object of the present invention is to provide a CO-Orr alloy that is less prone to cracking and has good workability as a sputtering target.

〔発明の概要〕 本発明は、上記目的を達成する為、Orを9、0〜22
.5重量%含有させ、Sc、V。
[Summary of the Invention] In order to achieve the above object, the present invention provides Or of 9, 0 to 22.
.. Containing 5% by weight, Sc, V.

N b 、 T a 、 W 、 M n 、 T c
 、 Re 、 F e 。
Nb, Ta, W, Mn, Tc
, Re, Fe.

0atIr、Nt+Pa+PtsOusAgAusZr
、Oct、B、Al、Oa、In。
0atIr, Nt+Pa+PtsOusAgAusZr
, Oct., B., Al., Oa., In.

TA!、O,Si、Go、8n+Pb、P。TA! , O, Si, Go, 8n+Pb, P.

As、Sb、Bi、S、Se、Tθ、ランタノイド元素
及びアクチノイド元素から選択された1種又は2種以上
の元素を0.001〜5重量%含有させ、残部が実質的
にCOである磁気記録媒体用CO基合金を提供する。
Magnetic recording containing 0.001 to 5% by weight of one or more elements selected from As, Sb, Bi, S, Se, Tθ, lanthanide elements, and actinide elements, and the balance being substantially CO. A CO-based alloy for media is provided.

ここで、この発明の00基合金において成分組成範囲を
上記の通りに限定した理由を説明する。
Here, the reason why the composition range of the 00 group alloy of the present invention is limited as described above will be explained.

(1)Or酸成分 Or酸成分こけ、飽和磁化を実用範囲である80〜85
0ガウスに調整する作用がある。その含有量が多すぎる
と、十分な飽和磁化が得られに<<、一方その含有量が
少=3− なすぎると、飽和磁化が850ガウス以上となりやすい
、したがって、Orの成分範囲は、9.0〜225%、
更には12〜22.5%、更には14〜22%が好まし
い。
(1) Or acid component Or acid component moss, saturation magnetization is 80 to 85, which is the practical range
It has the effect of adjusting to 0 Gauss. If the content is too large, sufficient saturation magnetization cannot be obtained. On the other hand, if the content is too small, the saturation magnetization tends to exceed 850 Gauss. Therefore, the component range of Or is 9 .0~225%,
More preferably, it is 12 to 22.5%, and even more preferably 14 to 22%.

以上、説明した飽和磁化に関して、その値として、80
〜850ガウス必要なのは飽和磁化が太きすぎると、例
えば垂直磁化膜として使用した場合、膜面に垂直の磁化
配向を得にくく、一方飽和磁化が小さすぎると、再生出
力が小さくなり、87N比が悪化して実用に供し得なく
なりやすい為である。
Regarding the saturation magnetization explained above, its value is 80
~850 Gauss is necessary because if the saturation magnetization is too thick, for example, when used as a perpendicular magnetization film, it will be difficult to obtain a magnetization orientation perpendicular to the film surface.On the other hand, if the saturation magnetization is too small, the reproduction output will be small and the 87N ratio will be This is because it is likely to deteriorate and become unusable.

(2) S c + V 、N b 、T a + W
 t M n + ’II’ cRe、Fe、Os、I
r、Ni、Pd。
(2) S c + V, N b, T a + W
t M n + 'II' cRe, Fe, Os, I
r, Ni, Pd.

Pt、Ou、Ag、Au、Zn、Od、Bi7.Oa、
In、Tl+0.81.GeSn、Pb、PtAtz8
b+Bi +S+8e、Tθ、ランタノイド元素及びア
クチノイド元素: これらの元素は、Oo −Or合金の加工4− 性を向上させ、かつターゲットに生じるクラックを発生
させにくくさせるが、含有量が多すぎると、加工性磁気
特性及びクランク発生防止率を低下させ、一方、少なす
ぎると、その効果が低下する。したがって、上記元素群
から選択された1種又は2種以上の元素の含有量は、0
.001〜5重t%更にけo、 o l、−/i量%、
更に0.1〜2重量%が好ましい。
Pt, Ou, Ag, Au, Zn, Od, Bi7. Oa,
In, Tl+0.81. GeSn, Pb, PtAtz8
b+Bi +S+8e, Tθ, lanthanide elements and actinide elements: These elements improve the workability of the Oo-Or alloy and make it difficult to generate cracks in the target, but if their content is too high, the workability It lowers the magnetic properties and the cranking prevention rate, and on the other hand, if it is too small, the effect decreases. Therefore, the content of one or more elements selected from the above element group is 0.
.. 001 to 5 weight t%, and o, o l, -/i amount%,
Further, 0.1 to 2% by weight is preferred.

〔発明の実施例〕[Embodiments of the invention]

次に本発明について、実施例を用いて説明する。 Next, the present invention will be explained using examples.

通常の溶解鋳造法により、それぞれ表に示される成分組
成をもった本発明00基合金1〜5及び比較CO基合金
1及び2の鋳塊をそれぞれ調製し、ついでこれらの鋳塊
から表に示す如く、スパッタリング用ターゲットを作製
した。その際、加工性及び歩留りが調べられた。引き続
いて、これらのターゲットを用い雰囲気+、 A r 
r雰囲気圧力ニ5X10 torrの条件でDoマグネ
トロンスパッタリングを行ない、厚さ10μmのポリエ
ステルフィルム基体の表面に実質的lこ合金組成と同一
の成分組成をもつ厚さ約0.5μmの磁気記録媒体とし
ての薄膜を形成した。電力投入量は約5w / crd
とした。この際、ターゲットのクラック発生率が試料1
00個に対して調べられた。
Ingots of the 00-based alloys 1 to 5 of the present invention and comparative CO-based alloys 1 and 2 having the compositions shown in the table were prepared by a normal melting and casting method, and then from these ingots the ingots shown in the table were prepared. A sputtering target was prepared as described above. At that time, processability and yield were investigated. Subsequently, using these targets, atmosphere +, A r
Do magnetron sputtering was performed under the conditions of an atmospheric pressure of 5 x 10 torr to form a magnetic recording medium of approximately 0.5 μm in thickness having substantially the same composition as the alloy composition on the surface of a 10 μm thick polyester film substrate. A thin film was formed. Power input is approximately 5w/crd
And so. At this time, the crack occurrence rate of the target was
00 items were investigated.

以下余白 この表から明らかな如く、本発明の実施例は、比較例に
比べて、加工性及びクラック防止効果が高く、量産化に
有効な方法となる。
As is clear from this table, the examples of the present invention have higher workability and crack prevention effects than the comparative examples, and are an effective method for mass production.

又、ターゲットが大型化しても、加工性及びクラック防
止効果が高い。
Furthermore, even if the target becomes larger, the workability and crack prevention effect are high.

〔発明の効果〕〔Effect of the invention〕

本発明は、CO基合金に、Orを9.0〜22.5重量
%含有させ、8 c s V r N b *T a 
、 W 、 M n 、 T c 、 Re 、 F 
e 、 Os 。
In the present invention, a CO-based alloy contains 9.0 to 22.5% by weight of Or, and 8 c s V r N b *T a
, W, Mn, Tc, Re, F
e, Os.

I r+ N i 、* P d r P t * O
u + A g + A uZn、Od、B、A1.O
a、In、T/。
I r+ N i , * P d r P t * O
u + A g + A uZn, Od, B, A1. O
a, In, T/.

0 、81 、 G o 、 S n 、 P b 、
 P 、 A s 。
0, 81, Go, Sn, Pb,
P, As.

Sb、Bi、8.8e 、Te、ランタノイド元素及び
アクチノイド元素から選択された1種又は2種以上の元
素を0.001〜5重量%含有させることにより、クラ
ックが生じにくく、かつ加工性が良好な磁気記録媒体用
C。
By containing 0.001 to 5% by weight of one or more elements selected from Sb, Bi, 8.8e, Te, lanthanide elements, and actinide elements, cracks are less likely to occur and workability is good. C for magnetic recording media.

基合金を提供できる。We can provide base alloys.

代理人弁理士 則 近 憲 佑Representative Patent Attorney Noriyuki Chika

Claims (1)

【特許請求の範囲】 Orを9.0〜22.5重量%含有させ、8 c +V
、Nb、Ta、W、Mn、Tc、Re、Fe0ssIr
tNitPa*Pt+Ou、Ag*A u 、 Z n
 、 Oet 、 B a A It 、 Oa 、 
I n 。 TJ、0eSi 、Go、Sn、Pb、P、AsS b
 、 B i 、 S 、 S e 、 T o 、ラ
ンタノイド元素及びアクチノイド元素から選択された1
種又Fi2種以上の元素を0.001〜5重量%含有さ
せ、残部が実質的にOoである磁気記録媒体用00基合
金。
[Claims] Contains 9.0 to 22.5% by weight of Or, and 8 c +V
, Nb, Ta, W, Mn, Tc, Re, Fe0ssIr
tNitPa*Pt+Ou, Ag*A u , Z n
, Oet , B a A It , Oa ,
In. TJ, 0eSi, Go, Sn, Pb, P, AsS b
, B i , S , S e , T o , 1 selected from lanthanide elements and actinide elements
A 00 group alloy for magnetic recording media, containing 0.001 to 5% by weight of two or more elements, the remainder being substantially Oo.
JP59081992A 1984-04-25 1984-04-25 Co alloy for magnetic recording medium Pending JPS60228637A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59081992A JPS60228637A (en) 1984-04-25 1984-04-25 Co alloy for magnetic recording medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59081992A JPS60228637A (en) 1984-04-25 1984-04-25 Co alloy for magnetic recording medium

Publications (1)

Publication Number Publication Date
JPS60228637A true JPS60228637A (en) 1985-11-13

Family

ID=13761968

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59081992A Pending JPS60228637A (en) 1984-04-25 1984-04-25 Co alloy for magnetic recording medium

Country Status (1)

Country Link
JP (1) JPS60228637A (en)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS611004A (en) * 1984-06-13 1986-01-07 Mitsubishi Electric Corp Cocr vertical magnetic recording medium
JPS6339122A (en) * 1986-08-01 1988-02-19 Hitachi Ltd Magnetic recording medium
JPS6396259A (en) * 1986-10-09 1988-04-27 Mitsui Eng & Shipbuild Co Ltd Co-cr alloy for vapor deposition
JPS63100149A (en) * 1986-10-14 1988-05-02 Mitsui Eng & Shipbuild Co Ltd Fe-co-base alloy for vapor deposition
US6129981A (en) * 1998-02-20 2000-10-10 Fujitsu Limited Magnetic recording medium and magnetic recording disk device
WO2000070106A1 (en) * 1999-05-14 2000-11-23 Fuji Electric Co., Ltd. Magnetic alloy and magnetic recording medium and method for preparation thereof, and target for forming magnetic film and magnetic recording device
US6583958B1 (en) 1999-11-18 2003-06-24 Hitachi, Ltd. Magnetic recording medium and magnetic storage system using same
KR100390391B1 (en) * 2001-01-31 2003-07-07 한국과학기술연구원 Alloy Compositions for Base Layer of High Density Longitudinal Magnetic Recording Media
US7435485B2 (en) * 2004-06-29 2008-10-14 Sony Corporation Magnetic material, and a MEMS device using the magnetic material
CN102194472A (en) * 2011-03-07 2011-09-21 南通万宝实业有限公司 Super high-density perpendicular magnetic recording magnetic film and preparation method thereof
RU2647955C1 (en) * 2017-07-11 2018-03-21 Юлия Алексеевна Щепочкина Sintered cobalt-based antifriction material
TWI642800B (en) * 2017-10-03 2018-12-01 光洋應用材料科技股份有限公司 Co-pt-re-based sputtering target, method of making the same, and magnetic recording layer
CN109022927A (en) * 2018-10-05 2018-12-18 广州宇智科技有限公司 A kind of water surface ship and the corrosion-resistant cobalt alloy for having excellent casting character of submarine
CN109022928A (en) * 2018-10-05 2018-12-18 广州宇智科技有限公司 A kind of solar energy thermal-power-generating salt melting system erosion resistant foundry cobalt alloy and its technique
CN111566253A (en) * 2018-08-09 2020-08-21 Jx金属株式会社 Sputtering target and magnetic film
CN112585295A (en) * 2018-08-09 2021-03-30 Jx金属株式会社 Sputtering target, magnetic film, and perpendicular magnetic recording medium

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS611004A (en) * 1984-06-13 1986-01-07 Mitsubishi Electric Corp Cocr vertical magnetic recording medium
JPS6339122A (en) * 1986-08-01 1988-02-19 Hitachi Ltd Magnetic recording medium
JPS6396259A (en) * 1986-10-09 1988-04-27 Mitsui Eng & Shipbuild Co Ltd Co-cr alloy for vapor deposition
JPH041054B2 (en) * 1986-10-09 1992-01-09 Mitsui Shipbuilding Eng
JPS63100149A (en) * 1986-10-14 1988-05-02 Mitsui Eng & Shipbuild Co Ltd Fe-co-base alloy for vapor deposition
JPH0430451B2 (en) * 1986-10-14 1992-05-21
US6129981A (en) * 1998-02-20 2000-10-10 Fujitsu Limited Magnetic recording medium and magnetic recording disk device
US6607612B1 (en) 1999-05-14 2003-08-19 Migaku Takahashi Magnetic alloy and magnetic recording medium and method for preparation thereof, and target for forming magnetic film and magnetic recording device
WO2000070106A1 (en) * 1999-05-14 2000-11-23 Fuji Electric Co., Ltd. Magnetic alloy and magnetic recording medium and method for preparation thereof, and target for forming magnetic film and magnetic recording device
CN1108390C (en) * 1999-05-14 2003-05-14 高桥研 Magnetic alloy and magnetic recording medium and method for preparation thereof, and target for forming magnetic film and magnetic recording device
US6583958B1 (en) 1999-11-18 2003-06-24 Hitachi, Ltd. Magnetic recording medium and magnetic storage system using same
KR100390391B1 (en) * 2001-01-31 2003-07-07 한국과학기술연구원 Alloy Compositions for Base Layer of High Density Longitudinal Magnetic Recording Media
US7435485B2 (en) * 2004-06-29 2008-10-14 Sony Corporation Magnetic material, and a MEMS device using the magnetic material
US8303794B2 (en) 2004-06-29 2012-11-06 Sony Corporation Magnetic material, and a MEMS device using the magnetic material
CN102194472A (en) * 2011-03-07 2011-09-21 南通万宝实业有限公司 Super high-density perpendicular magnetic recording magnetic film and preparation method thereof
RU2647955C1 (en) * 2017-07-11 2018-03-21 Юлия Алексеевна Щепочкина Sintered cobalt-based antifriction material
TWI642800B (en) * 2017-10-03 2018-12-01 光洋應用材料科技股份有限公司 Co-pt-re-based sputtering target, method of making the same, and magnetic recording layer
CN111566253A (en) * 2018-08-09 2020-08-21 Jx金属株式会社 Sputtering target and magnetic film
CN112585295A (en) * 2018-08-09 2021-03-30 Jx金属株式会社 Sputtering target, magnetic film, and perpendicular magnetic recording medium
US11894221B2 (en) 2018-08-09 2024-02-06 Jx Metals Corporation Sputtering target and magnetic film
CN109022927A (en) * 2018-10-05 2018-12-18 广州宇智科技有限公司 A kind of water surface ship and the corrosion-resistant cobalt alloy for having excellent casting character of submarine
CN109022928A (en) * 2018-10-05 2018-12-18 广州宇智科技有限公司 A kind of solar energy thermal-power-generating salt melting system erosion resistant foundry cobalt alloy and its technique

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