JP2857729B2 - Target member for spatter and method for producing the same - Google Patents

Target member for spatter and method for producing the same

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Publication number
JP2857729B2
JP2857729B2 JP21852892A JP21852892A JP2857729B2 JP 2857729 B2 JP2857729 B2 JP 2857729B2 JP 21852892 A JP21852892 A JP 21852892A JP 21852892 A JP21852892 A JP 21852892A JP 2857729 B2 JP2857729 B2 JP 2857729B2
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JP
Japan
Prior art keywords
film
magnetic
target member
powder
sintering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP21852892A
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Japanese (ja)
Other versions
JPH0641735A (en
Inventor
秀生 越本
淳 船越
隆 西
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kubota Corp
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Kubota Corp
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Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、金属薄膜型磁気記録媒
体における磁気記録層(磁性膜)を面内異方性化する下
地膜をスパツタ成膜するためのターゲツト部材およびそ
の製造方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a target member for forming a sputter film on a base film for making a magnetic recording layer (magnetic film) in-plane anisotropic in a metal thin film type magnetic recording medium and a method of manufacturing the same.

【0002】[0002]

【従来の技術】金属薄膜型磁気記録媒体は、磁気記録層
(磁性膜)としてCo系強磁性合金の薄膜を非磁性基体
に成膜した記録媒体であり、面内磁化記録方式のもので
は、磁性膜を面内異方性化するための下地膜を基体に設
け、その膜面上に磁性膜をエピタキシヤル成長により積
層成膜した層構成を有している。その積層成膜はスパツ
タ法により行われている。上記磁性膜を形成するCo系
合金としてCoCr、CoCrNi等が使用され、近時
は記録/再生ノイズの低減、記録密度の向上を目的とし
て、Taを適量含有した、CoCrTa、CoCrNi
Ta等からなる磁性膜を形成することが多く行われてい
る。他方、これらの磁性膜に面内磁気異方性を導入する
ための下地膜としては専らCr膜が使用されてきたが、
その改良として、一定量のAg,Si等の元素を含有さ
せたCr膜を形成することも提案されている(特開平3
−12813号公報,特開平4−60916号公報)。
2. Description of the Related Art A metal thin film type magnetic recording medium is a recording medium in which a thin film of a Co-based ferromagnetic alloy is formed on a non-magnetic substrate as a magnetic recording layer (magnetic film). A base film for making the magnetic film in-plane anisotropic is provided on the substrate, and the magnetic film has a layered structure formed on the film surface by epitaxial growth. The laminated film is formed by a sputter method. CoCr, CoCrNi, or the like is used as a Co-based alloy for forming the magnetic film. CoCrTa, CoCrNi containing an appropriate amount of Ta has recently been used for the purpose of reducing recording / reproducing noise and improving recording density.
A magnetic film made of Ta or the like is often formed. On the other hand, Cr films have been used exclusively as underlayers for introducing in-plane magnetic anisotropy into these magnetic films,
As an improvement, it has been proposed to form a Cr film containing a certain amount of elements such as Ag and Si (Japanese Patent Laid-Open No.
-12813, JP-A-4-60916).

【0003】[0003]

【発明が解決しようとする課題】磁気記録分野における
高密度記録の要請はますます高まり、これに応えるため
の磁気特性・電気特性の改善、特に高保磁力化および記
録/再生ノイズの低減等を更に進めることが要求されて
いる。磁性膜を下地膜に積層形成した層構成を有する面
内磁化方式の記録媒体において、その磁気特性・電気特
性を改善するには、磁性膜と下地膜との積層界面の整合
性を高めて磁性膜のエピタキシヤル成長を容易にし、界
面のミスマツチング、結晶歪みを減少させると共に、磁
性膜に磁化遷移幅が小さくなる結晶粒組織を形成するこ
とが必要である。本発明はこのような磁性膜の積層成膜
を可能とする下地膜をスパツタ成膜するためのターゲツ
ト部材とその製造方法を提供するものである。
The demand for high-density recording in the field of magnetic recording has been increasing more and more, and in order to meet this demand, magnetic and electrical characteristics have been improved, and in particular, higher coercive force and reduced recording / reproducing noise have been further required. It is required to proceed. In order to improve the magnetic and electrical characteristics of an in-plane magnetization type recording medium having a layer structure in which a magnetic film is laminated on an underlayer, it is necessary to improve the consistency of the lamination interface between the magnetic film and the underlayer to improve the magnetic properties. It is necessary to facilitate the epitaxial growth of the film, to reduce interface mismatching and crystal distortion, and to form a crystal grain structure in the magnetic film in which the magnetization transition width is small. The present invention provides a target member for forming a sputter film on a base film capable of forming such a laminated magnetic film, and a method for manufacturing the same.

【0004】[0004]

【課題を解決するための手段】本発明のスパツタ用ター
ゲツト部材は、 Cr100-X X 〔式中、原子%を表すXは1〜10である〕 …〔I〕 で表される化学組成を有し、相対密度98%以上である
焼結体からなることを特徴としている。本発明のターゲ
ツト部材は、上記の化学組成に調整された粉末を焼結原
料とする熱間等方圧加圧焼結法により製造することがで
きる。
The target member for a spatter according to the present invention is a chemical composition represented by the formula: Cr 100-X B X [wherein X representing atomic% is 1 to 10] ... [I] And a sintered body having a relative density of 98% or more. The target member of the present invention can be manufactured by a hot isostatic pressing sintering method using a powder adjusted to the above chemical composition as a sintering raw material.

【0005】[0005]

【作用】本発明のターゲツト部材を使用してスパツタ成
膜される下地膜は、Bの含有によるCrの結晶格子定数
の変化により、これに積層されるCo系合金磁性膜との
整合性にすぐれ、磁性膜のエピタキシヤル成長がよりス
ムースとなつて界面のミスマツチングが減少し、C軸を
面内方向とする磁性膜の配向性が改善されると共に、結
晶の歪みも少なくなる。また、本発明のターゲツト部材
を使用して形成される下地膜は、B含有効果として、C
rの結晶粒が微細でその柱状晶が明瞭化し、この結晶組
織の変化によりその膜面上にエピタキシヤル成長する磁
性膜合金の粒界の明瞭化・磁区の孤立化が助長され、磁
性膜の磁化遷移幅が減少する。
The undercoat film formed by sputtering using the target member of the present invention has excellent consistency with the Co-based alloy magnetic film laminated thereon due to the change in the crystal lattice constant of Cr due to the inclusion of B. In addition, the epitaxial growth of the magnetic film becomes smoother, thereby reducing interface mis-matching, improving the orientation of the magnetic film with the C axis in the in-plane direction, and reducing crystal distortion. The underlayer film formed using the target member of the present invention has a B-containing effect of C
The crystal grains of r are fine and their columnar crystals are clarified, and this change in crystal structure promotes clarification of the grain boundaries and isolation of magnetic domains of the magnetic film alloy that grows epitaxially on the film surface, The magnetization transition width decreases.

【0006】以下、本発明について詳しく説明する。本
発明のターゲツト部材のB含有量は1〜10原子%とす
る。1原子%を下限としたのは、それに満たないB含有
量では、その膜面に積層形成される磁性膜の保磁力、記
録/再生特性の改善効果が不十分であるからであり、他
方10原子%を上限としたのは、それを越えて多量のB
を含有させると、却つて磁性膜の保磁力を減じ、また記
録/再生特性の低下をきたすからである。より好ましい
B含有量は約2〜8原子%である。
Hereinafter, the present invention will be described in detail. The B content of the target member of the present invention is 1 to 10 atomic%. The reason why the lower limit of 1 atomic% is set is that if the B content is less than that, the effect of improving the coercive force and the recording / reproducing characteristics of the magnetic film laminated on the film surface is insufficient. The upper limit of atomic% is that a large amount of B
This is because the inclusion of inevitably reduces the coercive force of the magnetic film and lowers the recording / reproducing characteristics. A more preferable B content is about 2 to 8 atomic%.

【0007】本発明のターゲツト部材を焼結体として製
造することとしたのは、Bの偏析を防止し、ターゲツト
部材の肉厚の全体に亘る組成の均質性と緻密性を良好な
ものとするためである。すなわち、BはCrに溶解しに
くく、しかも硬くて脆いCr−B金属間化合物(Cr
B,CrB2 ,Cr3 2 等)を生成し易いため、ター
ゲツト部材の一般的な製造法である溶解・鋳造プロセス
を本発明のターゲツト部材の製造に適用すると、得られ
る鋳塊(インゴツト)は、Bの著しい偏析およびCr−
B金属間化合物の局所的な晶出・偏在を伴つた鋳造組織
を呈し、しかもそのインゴツトは極めて脆く割れ易いの
で、ターゲツト部材に必要な高緻密性を付与するための
塑性加工を加えることも不可能である。そこで、本発明
はこれを焼結体として製造することにより、ターゲツト
部材として望まれる均質性と高緻密性とを確保してい
る。その焼結体の緻密度を、相対密度で98%以上とし
たのは、焼結体の緻密性が低いと、それだけ焼結体に内
蔵されるガス量が多く、スパツタリング中のターゲツト
からのガス放出に起因して異常放電が生じ易くなり、基
板上に形成される下地膜の健全性が損なわれ、磁性膜の
改善効果を十分に発現させることができなくなるからで
あり、相対密度98%以上として、スパツタリング中の
ガス放出とそれに付随する上記弊害を防止している。
The reason why the target member of the present invention is manufactured as a sintered body is to prevent segregation of B and to improve the homogeneity and denseness of the composition over the entire thickness of the target member. That's why. That is, B is hardly dissolved in Cr, and is hard and brittle Cr-B intermetallic compound (Cr
B, CrB 2 , Cr 3 B 2, etc.) can be easily produced. Therefore, when a melting / casting process, which is a general method for producing a target member, is applied to the production of the target member of the present invention, an ingot is obtained. Indicates that significant segregation of B and Cr-
Since the B has a cast structure accompanied by local crystallization and uneven distribution of the intermetallic compound, and its ingot is extremely brittle and easily cracked, it is impossible to apply plastic working to impart the necessary high density to the target member. It is possible. Therefore, in the present invention, by manufacturing this as a sintered body, uniformity and high density desired as a target member are secured. The reason why the compact density of the sintered body is set to 98% or more in relative density is that if the compactness of the sintered body is low, the amount of gas contained in the sintered body is large, and the gas from the target during sputtering is large. This is because abnormal discharge is likely to occur due to the release, the soundness of the underlying film formed on the substrate is impaired, and the improvement effect of the magnetic film cannot be sufficiently exhibited, and the relative density is 98% or more. As a result, gas emission during sputtering and the above-mentioned adverse effects associated therewith are prevented.

【0008】本発明のターゲツト部材である焼結体は、
前記〔I〕式で示される化学組成に調整された粉末を原
料とし、熱間等方圧加圧焼結を行うことにより製造され
る。その焼結原料粉末としては、B含有Cr粉末、また
はCr粉末とB粉末との混合粉末、あるいはCr粉末と
B含有Cr粉末ないしCr−B金属間化合物(CrB,
CrB2 ,Cr3 2 ,Cr3 4 等)の粉末との混合
粉末等を使用することができる。焼結原料粉末の粒度
は、例えばB含有Cr粉末では約50〜400μmのも
の、また混合粉末では、Cr粉末が約50〜400μm
で、これに配合されるB粉末、Cr−B化合物粉末は約
5〜250μm程度のものが適当である。Cr−B化合
物をB源とする場合においても、上記のように微細粉末
として使用すると共に、熱間等方圧加圧焼結法による高
加圧力の均一な作用下に適切な焼結反応を行わせること
により、ターゲツト部材として要求される焼結体の良好
な均質性を確保することができる。
[0008] The sintered body, which is the target member of the present invention, comprises:
It is manufactured by subjecting a powder adjusted to the chemical composition represented by the formula [I] to a raw material and performing hot isostatic pressing sintering. As the sintering raw material powder, a B-containing Cr powder, a mixed powder of a Cr powder and a B powder, or a Cr powder and a B-containing Cr powder or a Cr-B intermetallic compound (CrB,
A mixed powder with a powder of CrB 2 , Cr 3 B 2 , Cr 3 B 4 or the like can be used. The particle size of the sintering raw material powder is, for example, about 50 to 400 μm for the B-containing Cr powder, and about 50 to 400 μm for the mixed powder.
It is appropriate that the B powder and the Cr-B compound powder to be blended with the above are about 5 to 250 μm. Even when the Cr-B compound is used as the B source, the sintering reaction is performed under the uniform action of the high pressing force by the hot isostatic pressing sintering method while using the fine powder as described above. By doing so, it is possible to secure good homogeneity of the sintered body required as a target member.

【0009】上記焼結原料粉末をカプセルに充填し、脱
気密封したうえ、焼結処理を行う。カプセルの材種は、
軟鋼、ステンレス鋼等を適宜使用することができる。カ
プセルの密封は、焼結反応過程での高緻密質化を妨げな
いように、約0.1mmHg以下の真空下で行うのが好
ましい。加圧焼結処理は、高加圧力の均一な作用下に焼
結反応を完結することができる熱間等方圧加圧焼結法が
好適である。その焼結処理は、形成される焼結体に相対
密度98.0%以上の高緻密性を付与するために、焼結
温度 約1000℃以上、加圧力 約1000kgf/
cm2 以上、処理時間 約1Hr以上とするのが好まし
い。焼結温度を高める程、焼結反応が促進されるが、あ
まり高くしたのでは、液相の生成とそれに伴うBの偏析
を生起し、焼結体の均質性を損なうので、約1500℃
を越える高温度は避けるべきである。加圧力および保持
時間はそれぞれ1300kgf/cm2 ,4Hrまでで
十分であり、それを越える高加圧力・長時間とする利益
はない。
The above-mentioned sintering raw material powder is filled in a capsule, degassed and sealed, and then subjected to sintering. The capsule material is
Mild steel, stainless steel, etc. can be used as appropriate. The sealing of the capsule is preferably performed under a vacuum of about 0.1 mmHg or less so as not to hinder high density during the sintering reaction process. For the pressure sintering treatment, a hot isostatic pressing sintering method capable of completing the sintering reaction under a uniform action of high pressure is suitable. The sintering process is performed at a sintering temperature of about 1000 ° C. or more and a pressing force of about 1000 kgf / in order to impart high density with a relative density of 98.0% or more to the formed sintered body.
cm 2 or more, and the treatment time is preferably about 1 Hr or more. The higher the sintering temperature, the more the sintering reaction is promoted. However, if the sintering temperature is too high, a liquid phase is generated and the segregation of B is caused, thereby impairing the homogeneity of the sintered body.
High temperatures above are to be avoided. The pressing force and the holding time are sufficient up to 1300 kgf / cm 2 and 4 hr, respectively.

【0010】上記工程を経て得られた焼結体はこれに適
宜の機械加工が施されて所定形状のターゲツト部材に仕
上げられる。また、その焼結体は、溶解・鋳造法による
ものと異なつて、熱間または冷間での鍛造、圧延等の塑
性加工が可能であり、従つて所望により、その緻密性を
更に高めるべく塑性加工に付して所定の板形状に成形す
ることもできる。
[0010] The sintered body obtained through the above steps is subjected to appropriate machining to be finished into a target member having a predetermined shape. Also, the sintered body can be subjected to plastic working such as hot or cold forging and rolling, unlike the method of melting / casting, and therefore, if necessary, the plasticity is further increased in order to further increase its denseness. It can be formed into a predetermined plate shape by processing.

【0011】本発明のターゲツト部材を下地膜の形成材
料として使用する磁気記録媒体の製作は、常法に従つて
行えばよい。例えば、磁気デイスクについて述べれば、
アルミニウム合金板等を基体とし、その表面に無電解め
つきにより硬質のNi−Pめつき膜(膜厚:例えば15
〜25μm)を設け、めつき膜面にテキスチヤ処理を施
したのち、本発明のターゲツト部材を使用して磁性膜の
下地層として、B含有Cr膜を適宜の膜厚(例えば50
0〜3000Å)に形成し、ついでその膜面上に磁性膜
(膜厚は例えば500〜1000Å)を形成する。上記
スパツタリングによる下地膜、または下地膜とそれにつ
づく磁性膜の成膜工程においては、磁性膜の保磁力や、
記録/再生特性の制御を目的として、基板側に負の電位
(例えば、−100〜−400V)を印加してスパツタ
を行うバイアススパツタが必要に応じて適用される。磁
性膜の膜面には、所望により、その摩耗・損傷を防止す
るための保護膜として、潤滑性と耐摩耗性を備えた被
膜、例えば炭素質膜(膜厚:例えば150〜600Å)
が常法に従つて形成される。
The manufacture of a magnetic recording medium using the target member of the present invention as a material for forming a base film may be carried out according to a conventional method. For example, if we talk about magnetic disks,
An aluminum alloy plate or the like is used as a substrate, and a hard Ni-P plating film (film thickness: for example, 15
After applying a texturing treatment to the surface of the plating film, a B-containing Cr film having an appropriate thickness (for example, 50 μm) is used as an underlayer of the magnetic film by using the target member of the present invention.
Then, a magnetic film (thickness is, for example, 500 to 1000) is formed on the film surface. In the step of forming the underlayer by sputtering, or the underlayer and the subsequent magnetic film, the coercive force of the magnetic film,
For the purpose of controlling the recording / reproducing characteristics, a bias sputter that applies a negative potential (for example, −100 to −400 V) to the substrate and performs spattering is applied as necessary. A film having lubricity and wear resistance, for example, a carbonaceous film (thickness: for example, 150 to 600 °) is provided on the film surface of the magnetic film as a protective film for preventing its wear and damage, if desired.
Is formed according to a conventional method.

【0012】[0012]

【実施例】【Example】

〔I〕ターゲツト部材の製造 Cr粉末(粒径350μm以下)と,CrB粉末(粒径
10μm以下)とを、化学量論比的に所定の化学組成と
なるように配合し、ボールミル(不活性雰囲気)で2時
間混練して焼結原料粉末を調製する。上記粉末混合物を
軟鋼製カプセル容器に充填し、真空度0.08mmHg
で真空密封したうえ、熱間静水等方加圧焼結処理(HI
P)に付し、温度1250℃,加圧力1100kgf/
cm2 の加熱加圧下に2時間を要して焼結を行つた。焼
結後、カプセル容器を機械加工により除去して板状焼結
体(板厚:40mm)を取出し、これに機械加工を加え
てターゲツト部材(板厚:4mm)を得た。表1に供試
ターゲツト部材の化学組成を示す。No.1〜3は発明
例、No.4はBを含有しない従来材に相当する比較例
(焼結条件は発明例と同じ)である。各ターゲツト部材
の焼結体の相対密度はいずれも99%以上である。
[I] Manufacture of target member Cr powder (particle diameter of 350 μm or less) and CrB powder (particle diameter of 10 μm or less) are blended so as to have a predetermined stoichiometric chemical composition. ) To prepare a sintering raw material powder for 2 hours. The above powder mixture was filled in a mild steel capsule container, and the degree of vacuum was 0.08 mmHg.
And then hot isostatic pressing sintering (HI
P), temperature 1250 ° C, pressure 1100kgf /
The sintering was performed under heating and pressure of 2 cm 2 for 2 hours. After sintering, the capsule container was removed by machining to take out a plate-like sintered body (thickness: 40 mm), which was then machined to obtain a target member (thickness: 4 mm). Table 1 shows the chemical composition of the test target member. Nos. 1 to 3 are invention examples, and No. 4 is a comparative example corresponding to a conventional material containing no B (sintering conditions are the same as the invention examples). The relative density of the sintered body of each target member is 99% or more.

【0013】〔II〕磁気記録媒体の製作 直流マグネトロンスパツタリング法により、アルミニウ
ム合金基板(表面に膜厚20μmのNi−P合金無電解
めつき膜形成)に、下地膜(膜厚:1400Å)、磁性
膜としてCo86Cr12Ta2 合金膜(膜厚:600
Å)、および炭素質保護膜(グラフアイト・カーボン
膜,250Å)を積層成膜して供試磁気デイスクを製作
した(スパツタ雰囲気:Arガス,5×10-3Tor
r、基板温度:250℃)。
[II] Production of magnetic recording medium A base film (film thickness: 1400 °) is formed on an aluminum alloy substrate (a 20 μm-thick Ni—P alloy electroless plating film is formed on the surface) by a DC magnetron sputtering method. Co 86 Cr 12 Ta 2 alloy film (film thickness: 600)
Å) and a carbonaceous protective film (graphite carbon film, 250 Å) were laminated to form a test magnetic disk (sputter atmosphere: Ar gas, 5 × 10 −3 Torr).
r, substrate temperature: 250 ° C.).

【0014】(1)保磁力(Hc)の測定 表2は、ターゲツト部材No.1〜No.4を使用して下地
膜を形成した磁気デイスクの保磁力Hc(Oe)の測定
結果を示している。表中、イ欄は、下地膜および磁性膜
をバイアススパツタ(バイアス電位:−300V)によ
り成膜した磁気デイスク、ロ欄は下地膜のスパツタ成膜
のみバイアススパツタ(バイアス電位:−300V)と
した磁気デイスクについての測定結果である。図1およ
び図2は、それぞれ表2のイ欄およびロ欄の保磁力(H
c)とB含有量(at%)の関係を図示したものであ
る。
(1) Measurement of Coercive Force (Hc) Table 2 shows the results of measurement of the coercive force Hc (Oe) of the magnetic disk on which the underlayer was formed using the target members No. 1 to No. 4. I have. In the table, column A shows a magnetic disk on which an underlayer film and a magnetic film are formed using a bias sputter (bias potential: -300 V), and column B shows a bias sputter (bias potential: -300 V) only when the sputter of the underlayer is formed. It is a measurement result about the magnetic disk which was made. 1 and 2 show the coercive force (H
3 is a diagram illustrating the relationship between c) and the B content (at%).

【0015】(2)記録/再生試験 表3は、ターゲツト部材No.2(発明例)およびNo.4
(比較例)を使用して下地膜を形成した磁気デイスクに
ついて記録/再生試験結果を示している。但し、同表ハ
欄の供試磁気デイスクは、下地膜および磁性膜のいずれ
もバイアス電位を印加しないスパツタにより成膜した磁
気デイスク(保磁力Hc:1400Oe,Br・δ:4
00G・μm)であり、同表ニ欄の供試磁気デイスク
は、磁性膜のスパツタ成膜のみバイアススパツタ(バイ
アス電位:−250V)とした磁気デイスク(保磁力H
c:1500Oe,Br・δ:400G・μm)であ
る。表中、HF−TAAは高周波トラツク平均出力(μ
V)、Resは分解能(%)、O/Wはオーバライト
(db)、PW50は変調波の半値幅(nsec)であ
る。
(2) Recording / Reproduction Test Table 3 shows the target members No. 2 (inventive example) and No. 4
A recording / reproducing test result is shown for a magnetic disk on which a base film is formed using (Comparative Example). However, the test magnetic disk in column C of the table is a magnetic disk (coercive force Hc: 1400 Oe, Br · δ: 4) formed by a sputter that does not apply a bias potential to both the base film and the magnetic film.
00 G · μm), and the test magnetic disks shown in the second column of the table are magnetic disks (coercive force H) in which only a magnetic film sputter film is formed as a bias spatter (bias potential: -250 V).
c: 1500 Oe, Br · δ: 400 G · μm). In the table, HF-TAA is the high-frequency track average output (μ
V), Res are the resolution (%), O / W is the overwrite (db), and PW50 is the half width (nsec) of the modulated wave.

【0016】上記各表に示したように、本発明のB含有
Crターゲツト部材を使用して下地膜をスパツタ成膜し
た磁気記録媒体は、Bを含有しない従来のCrターゲツ
ト部材を使用した磁気記録媒体に比べて高い保磁力(H
c)を有し、また保磁力(Hc)、およびBr・δ(残
留磁束密度と膜厚の積)を同一レベルとした磁気デイス
クの比較から明らかなように改良された記録/再生特性
を有している。
As shown in the above tables, the magnetic recording medium in which the underlayer was spattered using the B-containing Cr target member of the present invention was a magnetic recording medium using a conventional Cr target member containing no B. Higher coercive force (H
c), and has improved recording / reproducing characteristics as apparent from comparison of magnetic disks having the same level of coercive force (Hc) and Br · δ (product of residual magnetic flux density and film thickness). doing.

【0017】[0017]

【表1】 [Table 1]

【0018】[0018]

【表2】 [Table 2]

【0019】[0019]

【表3】 [Table 3]

【0020】[0020]

【発明の効果】金属薄膜型磁気記録媒体の磁気記録層
(磁性膜)を面内異方性化するための下地膜を、本発明
のターゲツト部材を使用してスパツタ成膜することによ
り、磁性膜の保磁力および記録/再生ノイズ磁性等が高
められ、その磁気的・電気的特性の改善効果としてより
高密度の記録が可能となる。
According to the present invention, the underlayer film for making the magnetic recording layer (magnetic film) of the metal thin film type magnetic recording medium in-plane anisotropic is formed by sputtering using the target member of the present invention. The coercive force of the film, the recording / reproducing noise magnetism, etc. are enhanced, and higher density recording becomes possible as an effect of improving the magnetic and electrical characteristics.

【図面の簡単な説明】[Brief description of the drawings]

【図1】下地膜のB含有量と磁性膜の保磁力の関係を示
すグラフである。
FIG. 1 is a graph showing the relationship between the B content of a base film and the coercive force of a magnetic film.

【図2】下地膜のB含有量と磁性膜の保磁力の関係を示
すグラフである。
FIG. 2 is a graph showing the relationship between the B content of a base film and the coercive force of a magnetic film.

───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭62−183463(JP,A) 特開 平3−138365(JP,A) 特開 平4−60916(JP,A) 特開 平3−12813(JP,A) (58)調査した分野(Int.Cl.6,DB名) C23C 14/34 C22C 1/04──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-62-183463 (JP, A) JP-A-3-138365 (JP, A) JP-A-4-60916 (JP, A) JP-A-3- 12813 (JP, A) (58) Field surveyed (Int. Cl. 6 , DB name) C23C 14/34 C22C 1/04

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 金属薄膜型磁気記録媒体における磁気記
録層の下地膜をスパツタ成膜するためのターゲツト部材
であつて、次式 Cr100-X X 〔式中、原子%を表すXは1〜10であ
る〕 で示される化学組成を有し、相対密度98%以上の焼結
体であることを特徴とするターゲツト部材。
1. A shall apply in Tagetsuto member for sputter depositing a base film of the magnetic recording layer in the metal thin film type magnetic recording medium, in the formula Cr 100-X B X [wherein, the X representing the atomic% 1 And a sintered body having a relative density of 98% or more.
【請求項2】 Cr100-X X 〔式中、原子%を表すX
は1〜10である〕で示される化学組成に調整された粉
末を金属容器に充填し、脱気密封した後、熱間等方圧加
圧焼結を行うことを特徴とする請求項1に記載のターゲ
ツト部材の製造方法。
2. Cr 100-X B X [wherein X represents atomic%.
Is 1 to 10]. A powder adjusted to the chemical composition represented by the formula is filled in a metal container, and after degassing and sealing, hot isostatic pressing sintering is performed. A method for producing the target member according to the above.
JP21852892A 1992-07-24 1992-07-24 Target member for spatter and method for producing the same Expired - Lifetime JP2857729B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21852892A JP2857729B2 (en) 1992-07-24 1992-07-24 Target member for spatter and method for producing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21852892A JP2857729B2 (en) 1992-07-24 1992-07-24 Target member for spatter and method for producing the same

Publications (2)

Publication Number Publication Date
JPH0641735A JPH0641735A (en) 1994-02-15
JP2857729B2 true JP2857729B2 (en) 1999-02-17

Family

ID=16721342

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21852892A Expired - Lifetime JP2857729B2 (en) 1992-07-24 1992-07-24 Target member for spatter and method for producing the same

Country Status (1)

Country Link
JP (1) JP2857729B2 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9970099B2 (en) 2012-03-09 2018-05-15 Jx Nippon Mining & Metals Corporation Sputtering target for magnetic recording medium, and process for producing same

Also Published As

Publication number Publication date
JPH0641735A (en) 1994-02-15

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