JPH0641734A - Target member and its production - Google Patents

Target member and its production

Info

Publication number
JPH0641734A
JPH0641734A JP21852792A JP21852792A JPH0641734A JP H0641734 A JPH0641734 A JP H0641734A JP 21852792 A JP21852792 A JP 21852792A JP 21852792 A JP21852792 A JP 21852792A JP H0641734 A JPH0641734 A JP H0641734A
Authority
JP
Japan
Prior art keywords
target member
magnetic
film
sputtering
alloy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21852792A
Other languages
Japanese (ja)
Inventor
Yoshinobu Okumura
善信 奥村
Atsushi Funakoshi
淳 船越
Takashi Nishi
隆 西
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kubota Corp
Original Assignee
Kubota Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kubota Corp filed Critical Kubota Corp
Priority to JP21852792A priority Critical patent/JPH0641734A/en
Publication of JPH0641734A publication Critical patent/JPH0641734A/en
Pending legal-status Critical Current

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  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Thin Magnetic Films (AREA)
  • Powder Metallurgy (AREA)

Abstract

PURPOSE:To improve a target member for forming a magnetic recording layer (magnetic film) having improved magnetic characteristics fit for high density recording by a sputtering method. CONSTITUTION:This target member is a sintered compact consisting of, by atom, 6-17% Cr, <38%, in total, of 0.3-36% Ni and 0.5-8% Ta and the balance essentially Co and having >=98% relative density. This target member is produced by filling a capsule with atomized powder having <=22 mesh particle diameter, hermetically sealing the capsule in vacuum of <=0.1mmHg and carrying out sintering by hot isostatic pressing at 800-1,250 deg.C under 500-2,000kgf/cm<2> for 0.5-4hr.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、磁気記録媒体の磁気記
録層をスパツタ法により形成するためのターゲツト部
材、およびその製造方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a target member for forming a magnetic recording layer of a magnetic recording medium by a sputtering method, and a manufacturing method thereof.

【0002】[0002]

【従来の技術】磁気デイスク、磁気テープ等の磁気記録
媒体は、高密度記録性の点から、その磁気記録層(磁性
膜)を強磁性合金で形成した金属薄膜型記録媒体が、従
来の塗布型磁気記録媒体に代って主流となつている。そ
の磁気記録層をスパツタ法により非磁性基体上に製膜す
るためのターゲツト部材として、Co−Ni,Co−C
r,Co−Ni−Cr合金が使用されてきた。
2. Description of the Related Art A magnetic recording medium such as a magnetic disk or a magnetic tape is a metal thin film type recording medium having a magnetic recording layer (magnetic film) formed of a ferromagnetic alloy from the viewpoint of high density recording property. Type magnetic recording media have become the mainstream. Co-Ni, Co-C is used as a target member for forming the magnetic recording layer on the non-magnetic substrate by the sputtering method.
r, Co-Ni-Cr alloys have been used.

【0003】磁気記録分野における高密度記録に対する
要求はますます高まり、一層の高保磁力化およびノイズ
レベルの低減が要求されているが、上記Co−Ni,C
o−Cr,Co−Ni−Cr合金等をターゲツト部材と
して形成される磁性膜では、その改善効果に限度があ
る。
The demand for high-density recording in the field of magnetic recording is increasing more and more, and higher coercive force and reduction of noise level are required.
A magnetic film formed using an o-Cr, Co-Ni-Cr alloy or the like as a target member has a limited improvement effect.

【0004】その高密度記録化の要請に応えるためのタ
ーゲツト部材の改良として種々の提案がなされており、
例えば特開平1−133217号公報には、一定量のT
aを添加したCo−Cr−Ta合金をターゲツト部材と
して磁性膜を形成することにより高保磁力とノイズ低減
効果を得ることが記載され、特開平3−138365号
公報には、そのCo−Cr−Ta合金磁性膜の磁気特性
の均質性を高めるためのターゲツト部材の改良として、
Co−Cr−Ta合金の微細な急冷凝固粉末を加圧焼結
して製造される均質緻密な焼結体をターゲツト部材とす
ることが記載されている。また、このほかBを一定量添
加したCo−Cr−B,Co−Cr−Ni−B合金をタ
ーゲツトとして磁性膜を形成することや、そのスパツタ
蒸着において基板に負電圧を印加するバイアススパツタ
により磁性膜の保磁力を高めること等も提案されている
(特開平3−49021号公報、特開平3−54723
号公報)。
Various proposals have been made to improve the target member to meet the demand for high density recording.
For example, JP-A-1-133217 discloses that a certain amount of T
It is described that a high coercive force and a noise reducing effect are obtained by forming a magnetic film using a Co-Cr-Ta alloy containing a as a target member, and JP-A-3-138365 discloses that Co-Cr-Ta alloy. As an improvement of the target member for improving the homogeneity of the magnetic properties of the alloy magnetic film,
It is described that a homogeneous dense sintered body produced by pressure-sintering a fine rapidly solidified powder of a Co-Cr-Ta alloy is used as a target member. Besides, by forming a magnetic film by using Co-Cr-B and Co-Cr-Ni-B alloys containing a certain amount of B added as a target, and by bias bias sputtering for applying a negative voltage to the substrate in the sputtering deposition. It has also been proposed to increase the coercive force of the magnetic film (Japanese Patent Laid-Open No. 3-49021 and Japanese Patent Laid-Open No. 3-54723).
Issue).

【0005】[0005]

【発明が解決しようとする課題】本発明は、磁気記録媒
体の高密度記録に適した改良された磁気特性を有する磁
性膜を形成するための新規合金組成を有するターゲツト
部材およびその製造方法を提供するものである。
SUMMARY OF THE INVENTION The present invention provides a target member having a novel alloy composition for forming a magnetic film having improved magnetic properties suitable for high density recording of a magnetic recording medium, and a method of manufacturing the same. To do.

【0006】[0006]

【課題を解決するための手段および作用】本発明のター
ゲツト部材は、原子%で、Cr:6〜17%,Ni:
0.3〜36%,Ta:0.5〜8%(但し、NiとT
aの合計量は38%を越えない),残部実質的にCoか
らなり、相対密度:98%以上である焼結体であること
を特徴としている。本発明のターゲツト部材は、上記組
成を有する粒径22メツシユ以下の急冷凝固された微細
なアトマイズ粉末を焼結原料とし、熱間等方圧加圧焼結
することにより製造される。
Means and Actions for Solving the Problems The target member of the present invention is, in atomic%, Cr: 6 to 17%, Ni:
0.3-36%, Ta: 0.5-8% (however, Ni and T
The total amount of a does not exceed 38%), the balance is substantially Co and the relative density is 98% or more. The target member of the present invention is manufactured by using hot atomizing under pressure and sintering using fine atomized powder having the above composition and having a particle size of 22 mesh or less and rapidly solidified and solidified.

【0007】以下、本発明について詳しく説明する。本
発明のターゲツト部材を、焼結体として形成することと
したのは、ターゲツト部材の肉厚内部における構成元素
の分布のムラを防止し、板厚方向の全体に亘る組成の均
質性を得るためである。通常、ターゲツト部材は、溶解
・鋳造による鋳塊として、また鋳塊を緻密化するための
熱間もしくは冷間での塑性加工(鍛造、圧延等)の工程
を経て製造されるが、本発明の前記組成を有するターゲ
ツト合金は、そのTaの固溶限が比較的低く、しかも工
業的生産での鋳造工程では平衝状態からのずれが生じる
ため、ミクロ的にTaの富化した偏析、およびその化合
物の局所的な晶出・偏在を不可避的に付随する。その組
成の不均質性は、熱間・冷間の塑性加工を施しても十分
に解消することができない。このような組成の不均一な
ターゲツト部材を使用すると、基板上に蒸着形成される
磁性膜の組成が、スパツタリングの経過に伴つて変動
し、所期の磁気特性を確保することは不可能である。そ
こで本発明は、そのターゲツト部材を、組成の均質な微
細粉末を原料とする焼結体として形成することにより、
ターゲツト部材の肉厚内部の組成の均質性を確保し、併
せて高緻密性をもたせている。
The present invention will be described in detail below. The target member of the present invention is formed as a sintered body in order to prevent uneven distribution of constituent elements within the thickness of the target member and to obtain homogeneity of composition throughout the plate thickness direction. Is. Normally, the target member is manufactured as an ingot by melting / casting, and through a hot or cold plastic working (forging, rolling, etc.) step for densifying the ingot. The target alloy having the above composition has a relatively low solid solution limit of Ta, and in addition, a deviation from the equilibrium state occurs in the casting process in industrial production. Inevitably accompanies local crystallization and uneven distribution of the compound. The inhomogeneity of the composition cannot be sufficiently eliminated even by performing hot and cold plastic working. When a target member having such a non-uniform composition is used, the composition of the magnetic film formed by vapor deposition on the substrate changes with the progress of sputtering and it is impossible to secure the desired magnetic characteristics. . Therefore, the present invention, by forming the target member as a sintered body using a homogenous fine powder of composition as a raw material,
The homogeneity of the composition inside the wall thickness of the target member is ensured, and at the same time, the target member is made highly dense.

【0008】本発明のターゲツト部材を、Cr:6〜1
7%,Ni:0.3〜36%,およびTa:0.5〜8
%(但し、NiとTaの合計量は38%以下),残部実
質的にCoからなる組成としたのは、この組成範囲にお
いて、1300Oe以上の保磁力(Hc)を発現し、高
密度記録を可能とする改良された磁気特性が得られ、ま
た耐候性も良く、記録層として必要な安定性も確保され
るからである。NiとTaの合計量の上限を38%とし
たのは、それを越えると却つて保磁力が低下するからで
ある。なお、NiおよびTaの含有量は好ましくは、N
i:0.5%以上、Ta:1%以上である。
The target member of the present invention comprises Cr: 6 to 1
7%, Ni: 0.3 to 36%, and Ta: 0.5 to 8
% (However, the total amount of Ni and Ta is 38% or less) and the balance substantially consisting of Co is because the coercive force (Hc) of 1300 Oe or more is exhibited in this composition range, and high density recording is achieved. This is because the improved magnetic properties that can be obtained are obtained, the weather resistance is good, and the stability required for the recording layer is secured. The upper limit of the total amount of Ni and Ta is set to 38% because if it exceeds the limit, the coercive force will decrease. The content of Ni and Ta is preferably N
i: 0.5% or more, Ta: 1% or more.

【0009】本発明のターゲツトの緻密度を、相対密度
で98%以上としたのは、焼結体の緻密性が低いと、そ
れだけ焼結体に内蔵されるガス量が多く、スパツタリン
グ中のターゲツトからのガス放出に起因して異常放電が
生じ易くなり、基板上に形成される磁性膜の均質性が損
なわれ、磁気特性の改善効果を十分に発現させることが
できなくなるからであり、相対密度98%以上として、
スパツタリング中のガス放出とそれに付随する上記弊害
を防止している。
The density of the target of the present invention is set to 98% or more in terms of relative density because when the density of the sintered body is low, the amount of gas contained in the sintered body is large and the target during sputtering is large. This is because abnormal discharge is likely to occur due to gas release from the substrate, the homogeneity of the magnetic film formed on the substrate is impaired, and the effect of improving the magnetic properties cannot be sufficiently exhibited. As 98% or more,
It prevents the gas emission during spattering and the above-mentioned adverse effects.

【0010】本発明のターゲツト部材の焼結原料として
使用される前記組成を有するCo基合金粉末は、成分元
素の偏析等のない均質なものであることを要する。原料
粉末の組成の不均一は焼結体の組成の均質性を損なう原
因となるからである。このため本発明は原料粉末として
アトマイズ粉末を使用することとした。アトマイズ法に
おける合金溶湯の噴霧時に十分な急速冷却凝固を行なわ
せて得られる微細粉末は、その急冷効果として、固溶限
の低いTaが均一に固溶し、またそれらの化合物が晶出
した場合でも、微細に分散晶出した均質性の高い組織を
有する。そのアトマイズ合金粉末を、粒径22メツシユ
以下の微細粉末に限定したのは、十分な急冷効果による
粉末組成の均質性を確保するためである。アトマイズ粉
末は、ガスアトマイズ粉末、水アトマイズ粉末、または
真空アトマイズ粉末等を適宜使用することができる。
The Co-based alloy powder having the above composition used as a raw material for sintering the target member of the present invention is required to be homogeneous without segregation of constituent elements. This is because the nonuniformity of the composition of the raw material powder is a cause of impairing the homogeneity of the composition of the sintered body. Therefore, in the present invention, atomized powder is used as the raw material powder. The fine powder obtained by performing sufficient rapid cooling and solidification at the time of atomizing the molten alloy in the atomizing method has a rapid cooling effect, in which Ta having a low solid solubility limit is uniformly solid-dissolved and those compounds are crystallized. However, it has a highly homogeneous structure that is finely dispersed and crystallized. The atomized alloy powder is limited to a fine powder having a particle size of 22 mesh or less in order to secure the homogeneity of the powder composition due to a sufficient quenching effect. As the atomized powder, gas atomized powder, water atomized powder, vacuum atomized powder, or the like can be appropriately used.

【0011】上記アトマイズ粉末を、カプセル容器に充
填し、脱気密封したうえ、加圧焼結処理に付す。容器の
材種は、軟鋼、ステンレス鋼等、その選択は任意であ
る。容器内に充填した粉末の密封を、0.1mmHg以
下の真空下に行うこととしたのは、焼結体内に窒素、酸
素が残留することに伴う弊害(スパツタリングにおいて
異常放電を生じる原因となる)を防止するためである。
The atomized powder is filled in a capsule container, hermetically sealed by deaeration, and then subjected to pressure sintering treatment. The material of the container may be selected such as mild steel and stainless steel. The reason why the powder filled in the container is hermetically sealed under a vacuum of 0.1 mmHg or less is a harmful effect due to nitrogen and oxygen remaining in the sintered body (which causes abnormal discharge in sputtering). This is to prevent

【0012】加圧焼結処理に熱間等方圧加圧焼結法(H
IP焼結)法を適用するのは、高加圧力の均一な作用下
に生起する焼結反応により、均質・緻密性にすぐれた焼
結体を形成するためである。その焼結処理は、温度:8
00〜1250℃,加圧力:500〜2000Kgf/
cm2 ,保持時間:0.5〜4Hrの条件下に首尾よく
達成される。温度:800℃以上、加圧力:500Kg
f/cm2 以上、保持時間:0.5Hr以上としたの
は、それに満たない処理条件では、相対密度98%以上
の緻密性を確保することが困難ないし不可能となるから
であり、他方、処理温度の上限を1250℃に規定した
のは、それを越えると、液相の生成とそれに伴うTa等
の偏析が生起し、結果として、微細アトマイズ粉末を使
用したことの効果が失われ、得られる焼結体の均質性を
確保することができなくなるからである。また、加圧力
の上限を2000Kgf/cm2 とし、保持時間の上限
を4Hrとしたのは、それ以上の加圧力と時間を適用す
ることにより得られる利益はないからである。
The hot isostatic pressing method (H
The reason why the IP sintering method is applied is to form a sintered body excellent in homogeneity and compactness by a sintering reaction that occurs under the uniform action of a high pressure. The sintering process has a temperature of 8
00 to 1250 ° C, applied pressure: 500 to 2000 Kgf /
cm 2, retention time: successfully is often achieved under the conditions of 0.5~4Hr. Temperature: 800 ° C or higher, Pressurization force: 500 Kg
The reason for setting f / cm 2 or more and holding time: 0.5 Hr or more is that it is difficult or impossible to secure the denseness of relative density of 98% or more under the processing conditions less than that, on the other hand, The upper limit of the treatment temperature is defined as 1250 ° C. When the temperature exceeds the upper limit, the liquid phase is generated and the segregation of Ta and the like occurs, and as a result, the effect of using the fine atomized powder is lost. This is because it becomes impossible to ensure the homogeneity of the obtained sintered body. Further, the upper limit of the pressing force is set to 2000 Kgf / cm 2 and the upper limit of the holding time is set to 4 Hr, because there is no benefit obtained by applying the pressing force and time longer than that.

【0013】上記工程を経て得られた焼結体はこれに適
宜の機械加工が加えられて所定形状のターゲツト部材に
仕上げられる。また、その焼結体は、溶解・鋳造法によ
るものと異なつて、熱間または冷間での鍛造、圧延等の
塑性加工が可能であり、従つて所望により、その緻密性
を更に高めるべく塑性加工に付して所定の板形状に成形
することもできる。
The sintered body obtained through the above steps is subjected to appropriate machining to finish it into a target member having a predetermined shape. In addition, unlike the melting and casting method, the sintered body can be plastically worked by hot or cold forging, rolling, etc. Therefore, if desired, plasticity can be increased to further increase its denseness. It can also be processed and formed into a predetermined plate shape.

【0014】本発明のターゲツト部材を磁性膜材料とす
る磁気記録媒体の製作は、常法に従つて行えばよい。例
えば、面内記録用磁気デイスクについて述べれば、アル
ミニウム合金板等を基体とし、その表面に無電解めつき
により硬質のNi−Pめつき膜(膜厚:例えば15〜2
5μm)を設け、めつき膜面にテキスチヤ処理を施した
のち、磁性膜に面内異方性を与えるための下地層として
Cr膜を適宜の膜厚(例えば500〜3000Å)に形
成し、ついで本発明のターゲツト部材を使用して、上記
Cr膜面上に磁性膜(膜厚は例えば500〜1000
Å)を形成する。上記磁性膜のスパツタ成膜過程におい
て、基板側に、負の電圧(約−40V以上、例えば−4
0〜−250V)を印加するバイアススパツタを適用し
た場合は、その効果として磁性膜に、より高い保磁力を
付与することも可能である。なお、上記磁性膜の膜面に
は、所望により、その摩耗・損傷を防止するための保護
膜として、潤滑性と耐摩耗性を備えた被膜、例えば炭素
質膜(膜厚:例えば150〜600Å)が常法に従つて
形成される。
The magnetic recording medium using the target member of the present invention as a magnetic film material may be manufactured by a conventional method. For example, referring to a magnetic disk for in-plane recording, an aluminum alloy plate or the like is used as a substrate, and a hard Ni-P plating film (film thickness: for example, 15 to 2) is formed on the surface by electroless plating.
5 μm), and the plating film surface is subjected to a texturing treatment, and then a Cr film is formed to an appropriate film thickness (for example, 500 to 3000 Å) as a base layer for giving in-plane anisotropy to the magnetic film. Using the target member of the present invention, a magnetic film (having a film thickness of, for example, 500 to 1000) is formed on the Cr film surface.
Å) form. In the process of forming the sputtering film of the magnetic film, a negative voltage (about -40V or more, for example, -4V) is applied to the substrate side.
When a bias sputtering for applying 0 to −250 V) is applied, it is possible to impart a higher coercive force to the magnetic film as an effect thereof. On the film surface of the magnetic film, a film having lubricity and wear resistance, such as a carbonaceous film (film thickness: for example, 150 to 600Å), is optionally provided as a protective film for preventing abrasion and damage. ) Is formed according to a conventional method.

【0015】[0015]

【実施例】【Example】

[I]ターゲツト部材の製造 所定の化学組成を有するCo基合金のガスアトマイズ粉
末を分級し、22メツシユアンダの微細粉末を焼結原料
とする。上記アトマイズ粉末を軟鋼製カプセル容器に充
填し、真空度0.08mmHgで真空密封したうえ、熱
間等方圧加圧焼結処理(HIP)を行つた(表1)。焼
結後、カプセル容器を機械加工により除去して板状焼結
体(板厚:40mm)を取出し、これに機械加工を加え
て複数枚のターゲツト部材(板厚:4mm)に仕上げ
た。
[I] Production of target member A gas atomized powder of a Co-based alloy having a predetermined chemical composition is classified, and a fine powder of 22 mesh Yuanda is used as a sintering raw material. The atomized powder was filled in a mild steel capsule container, vacuum-sealed at a vacuum degree of 0.08 mmHg, and subjected to hot isostatic pressing (HIP) (Table 1). After sintering, the capsule container was removed by machining to take out a plate-shaped sintered body (plate thickness: 40 mm), and this was machined to finish into a plurality of target members (plate thickness: 4 mm).

【0016】表1に供試ターゲツト部材の相対密度、お
よび表面と板厚中心部の化学組成分析値を示す。表中、
T1〜T4は発明例の焼結体ターゲツト、T5〜T7は
比較例である。比較例T5およびT6のターゲツト部材
は、発明例と同一のHIP処理により製造された焼結体
であるが、前者はTaの含有を欠き、後者はNi含有量
が過剰であると共にNiとTaの合計量がその上限規定
からはずれている例である。比較例T7は溶解鋳造によ
り鋳片(板厚40mm)として製造した例(但し、合金
組成は本発明の規定を満足している)である。鋳片とし
て製造された供試ターゲツト部材T7は、その表面と板
厚中心部とにおけるTaの含有量の差異が大きいのに対
し、微細なアトマイズ合金粉末を使用しHIP処理によ
る焼結体として形成された供試ターゲツト部材T1〜T
4の板厚方向の偏析は軽微で均質性にすぐれている。な
お、鋳片として形成された供試材T7は、鋳造および熱
間圧延工程で割れを生じ、ターゲツト部材としての所定
形状への成形は不可能であつた。
Table 1 shows the relative densities of the test target members and the chemical composition analysis values of the surface and the center of the plate thickness. In the table,
T1 to T4 are the sintered body targets of the invention examples, and T5 to T7 are comparative examples. The target members of Comparative Examples T5 and T6 are sintered bodies manufactured by the same HIP treatment as the invention examples, but the former lacks Ta content, and the latter has an excessive Ni content and Ni and Ta content. In this example, the total amount deviates from the upper limit. Comparative Example T7 is an example manufactured by melt casting as a slab (plate thickness 40 mm) (however, the alloy composition satisfies the requirements of the present invention). The test target member T7 manufactured as a slab has a large difference in the Ta content between the surface and the central portion of the plate thickness, whereas it is formed as a sintered body by HIP treatment using fine atomized alloy powder. Test target members T1 to T
The segregation in the plate thickness direction of No. 4 is slight and has excellent homogeneity. The test material T7 formed as a slab was cracked during the casting and hot rolling steps, and could not be formed into a predetermined shape as a target member.

【0017】[II]磁気デイスクの製作 アルミニウム合金基板(表面に膜厚20μmのNi−P
合金無電解めつき膜形成)に、直流マグネトロンスパツ
タリング法を使用し、スパツタ雰囲気:5×10-3To
rrArガス,基板温度:250℃,基板バイアス電
圧:−150Vのスパツタ条件下に、Cr膜(膜厚:1
000Å)、磁性膜(膜厚:600Å)、および炭素質
膜(膜厚:250Å)をこの順に積層成膜して面内異方
性磁気デイスクを製作した。磁性膜のスパツタ成膜には
前記供試ターゲツト部材T1〜T6を使用した。各供試
磁気デイスクについて、磁性膜のスパツタ成膜に使用し
たターゲツト部材とそのスパツタリング層位、および磁
気特性の測定結果を表2に示す。
[II] Production of magnetic disk Aluminum alloy substrate (Ni-P having a film thickness of 20 μm on the surface)
Alloy electroless plating film formation) using DC magnetron sputtering method, sputtering atmosphere: 5 × 10 -3 To
Under a sputtering condition of rrAr gas, substrate temperature: 250 ° C., substrate bias voltage: −150 V, a Cr film (film thickness: 1
000Å), a magnetic film (film thickness: 600Å), and a carbonaceous film (film thickness: 250Å) were laminated in this order to manufacture an in-plane anisotropic magnetic disk. The test target members T1 to T6 described above were used for forming the magnetic film as a sputtering film. Table 2 shows the measurement results of the target member used for forming the sputtering film of the magnetic film, the sputtering layer position thereof, and the magnetic characteristics of each magnetic disk under test.

【0018】表2に示したように、本発明のターゲツト
部材T1〜T4を使用して磁性膜を形成した磁気デイス
クD1〜D8は、そのいずれも約1300Oe以上の高
保磁力(Hc)を有し、かつ保磁力角型比S* の値も相
対的に低いレベルにあり、ターゲツト部材5(Taを含
有しない)を使用した磁気デイスクD9,D10および
ターゲツト部材6(Ni量過剰)を使用した磁気デイス
クD11,D12との差異は歴然である。保磁力角型比
* は、記録媒体ノイズとの関連を有し、その値が低い
程、媒体ノイズは小さくなるとされている特性値であ
り、本発明のターゲツト部材を使用することにより、高
密度記録に適した磁気特性を有する記録媒体が得られる
ことがわかる。また、同一のターゲツト部材を使用し、
その表面層をスパツタリングして磁性膜を形成した磁気
デイスクと、その板厚中央層をスパツタリングして磁性
膜を形成した磁気デイスクとの比較から明らかなよう
に、スパツタリングの経過に伴う磁性膜の特性の変動は
少なく、ターゲツト部材の使用開始当初から、その寿命
に到るまで、磁気特性の安定した磁性膜を形成すること
ができる。
As shown in Table 2, each of the magnetic disks D1 to D8 having a magnetic film formed by using the target members T1 to T4 of the present invention has a high coercive force (Hc) of about 1300 Oe or more. In addition, the value of the coercive force squareness ratio S * is also at a relatively low level, and the magnetic disks D9 and D10 using the target member 5 (not containing Ta) and the magnetic disk using the target member 6 (excessive amount of Ni) are used. The difference from the disks D11 and D12 is obvious. The coercive force squareness ratio S * is a characteristic value that is related to recording medium noise, and the lower the value, the smaller the medium noise. By using the target member of the present invention, It can be seen that a recording medium having magnetic characteristics suitable for density recording can be obtained. Also, using the same target member,
As can be seen from the comparison between the magnetic disk formed by sputtering the surface layer to form the magnetic film and the magnetic disk formed by forming the magnetic film by sputtering the plate thickness center layer, the characteristics of the magnetic film with the progress of the sputtering. Is small, and a magnetic film having stable magnetic characteristics can be formed from the beginning of use of the target member to the end of its life.

【0019】[0019]

【表1】 [Table 1]

【0020】[0020]

【表2】 [Table 2]

【0021】[0021]

【発明の効果】本発明のターゲツト部材を使用すること
により、高密度記録に適した磁気特性を有する磁性膜を
形成することができる。そのターゲツト部材は、板厚方
向の組成変動が少なく良好な均質性を有しているので、
ターゲツト部材の使用開始当初から寿命に到るまで、そ
のスパツタリングにより形成される磁性膜は、所定の合
金組成とそれに基づく改良された一定の磁気特性を有
し、磁気記録層としての信頼性にすぐれている。
By using the target member of the present invention, a magnetic film having magnetic characteristics suitable for high density recording can be formed. Since the target member has good homogeneity with little composition variation in the plate thickness direction,
From the beginning of use of the target member to the end of its life, the magnetic film formed by the sputtering has a predetermined alloy composition and improved constant magnetic characteristics, and is excellent in reliability as a magnetic recording layer. ing.

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 原子%で、Cr:6〜17%,Ni:
0.3〜36%,Ta:0.5〜8%(但し、NiとT
aの合計量は38%を越えない),残部実質的にCoか
らなり、相対密度:98%以上である焼結体であること
を特徴とするターゲツト部材。
1. Cr: 6 to 17%, Ni: in atomic%.
0.3-36%, Ta: 0.5-8% (however, Ni and T
The total amount of a does not exceed 38%), the balance substantially consisting of Co, and the relative density: a sintered body having a relative density of 98% or more.
【請求項2】 原子%で、Cr:6〜17%,Ni:
0.3〜36%,Ta:0.5〜8%(但し、NiとT
aの合計量は38%を越えない),残部実質的にCoか
らなる、粒径22メツシユ以下のアトマイズ合金粉末を
金属容器に充填し、脱気密封した後、熱間等方圧加圧焼
結することを特徴とする請求項1に記載のターゲツト部
材の製造方法。
2. In atomic%, Cr: 6 to 17%, Ni:
0.3-36%, Ta: 0.5-8% (however, Ni and T
(The total amount of a does not exceed 38%), the balance is substantially Co, and the atomized alloy powder having a particle size of 22 mesh or less is filled in a metal container, deaerated and sealed, and then hot isostatic pressing is performed. The method of manufacturing a target member according to claim 1, wherein the target member is bonded.
JP21852792A 1992-07-24 1992-07-24 Target member and its production Pending JPH0641734A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21852792A JPH0641734A (en) 1992-07-24 1992-07-24 Target member and its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21852792A JPH0641734A (en) 1992-07-24 1992-07-24 Target member and its production

Publications (1)

Publication Number Publication Date
JPH0641734A true JPH0641734A (en) 1994-02-15

Family

ID=16721328

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21852792A Pending JPH0641734A (en) 1992-07-24 1992-07-24 Target member and its production

Country Status (1)

Country Link
JP (1) JPH0641734A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009221608A (en) * 2009-07-07 2009-10-01 Mitsui Mining & Smelting Co Ltd Sputtering target
WO2011125601A1 (en) 2010-04-01 2011-10-13 愛三工業株式会社 Idle rotation speed control device for bifuel engine

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009221608A (en) * 2009-07-07 2009-10-01 Mitsui Mining & Smelting Co Ltd Sputtering target
WO2011125601A1 (en) 2010-04-01 2011-10-13 愛三工業株式会社 Idle rotation speed control device for bifuel engine

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