JPS60224783A - 炭化けい素被覆物の製造方法 - Google Patents

炭化けい素被覆物の製造方法

Info

Publication number
JPS60224783A
JPS60224783A JP7952984A JP7952984A JPS60224783A JP S60224783 A JPS60224783 A JP S60224783A JP 7952984 A JP7952984 A JP 7952984A JP 7952984 A JP7952984 A JP 7952984A JP S60224783 A JPS60224783 A JP S60224783A
Authority
JP
Japan
Prior art keywords
silicon carbide
silicon
substrate
coating
org
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7952984A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6221868B2 (cg-RX-API-DMAC7.html
Inventor
Minoru Takamizawa
高見沢　稔
Tatsuhiko Motomiya
本宮　達彦
Yasushi Kobayashi
小林　泰史
Akira Hayashida
章 林田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin-Etsu Chemical Co Ltd
Original Assignee
Shin-Etsu Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin-Etsu Chemical Co Ltd filed Critical Shin-Etsu Chemical Co Ltd
Priority to JP7952984A priority Critical patent/JPS60224783A/ja
Publication of JPS60224783A publication Critical patent/JPS60224783A/ja
Publication of JPS6221868B2 publication Critical patent/JPS6221868B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Surface Treatment Of Glass (AREA)
  • Chemical Vapour Deposition (AREA)
JP7952984A 1984-04-20 1984-04-20 炭化けい素被覆物の製造方法 Granted JPS60224783A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7952984A JPS60224783A (ja) 1984-04-20 1984-04-20 炭化けい素被覆物の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7952984A JPS60224783A (ja) 1984-04-20 1984-04-20 炭化けい素被覆物の製造方法

Publications (2)

Publication Number Publication Date
JPS60224783A true JPS60224783A (ja) 1985-11-09
JPS6221868B2 JPS6221868B2 (cg-RX-API-DMAC7.html) 1987-05-14

Family

ID=13692512

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7952984A Granted JPS60224783A (ja) 1984-04-20 1984-04-20 炭化けい素被覆物の製造方法

Country Status (1)

Country Link
JP (1) JPS60224783A (cg-RX-API-DMAC7.html)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4804589A (en) * 1985-09-26 1989-02-14 Ngk Insulators, Ltd. Silicon carbide sintered members
US4816349A (en) * 1985-08-02 1989-03-28 Ngk Insulators, Ltd. Zirconia-coated silicon nitride sintered member
US4843040A (en) * 1986-02-20 1989-06-27 Ngk Insulators, Ltd. Silicon nitride sintered bodies
JP2019157204A (ja) * 2018-03-13 2019-09-19 イビデン株式会社 ＳｉＣ被覆ケイ素質材の製造方法、及び、ＳｉＣ被覆ケイ素質材

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4816349A (en) * 1985-08-02 1989-03-28 Ngk Insulators, Ltd. Zirconia-coated silicon nitride sintered member
US4882109A (en) * 1985-08-02 1989-11-21 Ngk Insulators, Ltd. Process of preparing zirconia-coated silicon nitride sintered member
US4804589A (en) * 1985-09-26 1989-02-14 Ngk Insulators, Ltd. Silicon carbide sintered members
US4843040A (en) * 1986-02-20 1989-06-27 Ngk Insulators, Ltd. Silicon nitride sintered bodies
JP2019157204A (ja) * 2018-03-13 2019-09-19 イビデン株式会社 ＳｉＣ被覆ケイ素質材の製造方法、及び、ＳｉＣ被覆ケイ素質材

Also Published As

Publication number Publication date
JPS6221868B2 (cg-RX-API-DMAC7.html) 1987-05-14

Similar Documents

Publication Publication Date Title
EP0030638B2 (en) Method for depositing silicon or germanium containing films
JPH049369B2 (cg-RX-API-DMAC7.html)
JP2003332333A (ja) 絶縁膜の低温蒸着法
EP0723600B1 (en) Process for the preparation of silicon carbide films using single organosilicon compounds
JPS6140035B2 (cg-RX-API-DMAC7.html)
US5061514A (en) Chemical vapor deposition (CVD) process for plasma depositing silicon carbide films onto a substrate
JPH0685391B2 (ja) 堆積膜形成方法
US5053255A (en) Chemical vapor deposition (CVD) process for the thermally depositing silicon carbide films onto a substrate
JPS6221868B2 (cg-RX-API-DMAC7.html)
Narita et al. Initial stage of 3C–SiC growth on Si (0 0 1)–2× 1 surface using monomethylsilane
JP3773341B2 (ja) ＳｉＣ被覆炭素材料
JPH02208925A (ja) 半導体膜の形成方法
JPH0587171B2 (cg-RX-API-DMAC7.html)
JPS6117910B2 (cg-RX-API-DMAC7.html)
JP2002097092A (ja) ＳｉＣ膜被覆ガラス状炭素材およびその製造方法
JP2019112288A (ja) 炭化ケイ素部材および半導体製造装置用部材
JPS6010108B2 (ja) 窒化珪素を基体上に熱分解堆積する方法
JPH1055971A (ja) 半導体薄膜の堆積方法
RU2749573C9 (ru) Способ получения тонких пленок карбида кремния на кремнии пиролизом полимерных пленок, полученных методом молекулярно-слоевого осаждения
JP2001262346A (ja) ピンホ−ルを低減したＳｉＣ被覆黒鉛部材の製法
JPS5957909A (ja) アモルフアスシリコン膜の形成方法
RU2578104C1 (ru) Способ газофазной карбидизации поверхности монокристаллического кремния ориентации (111), (100)
JPS60206446A (ja) 光化学気相成長装置
JP4246042B2 (ja) シリコン薄膜の製膜方法
JPS6324068B2 (cg-RX-API-DMAC7.html)