JPS60214573A - Method of resin-molding for reflection-type photo- coupled semiconductor device - Google Patents
Method of resin-molding for reflection-type photo- coupled semiconductor deviceInfo
- Publication number
- JPS60214573A JPS60214573A JP59070046A JP7004684A JPS60214573A JP S60214573 A JPS60214573 A JP S60214573A JP 59070046 A JP59070046 A JP 59070046A JP 7004684 A JP7004684 A JP 7004684A JP S60214573 A JPS60214573 A JP S60214573A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- metal lead
- molding
- metal
- resin molding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000465 moulding Methods 0.000 title claims abstract description 32
- 238000000034 method Methods 0.000 title claims abstract description 15
- 239000004065 semiconductor Substances 0.000 title claims description 8
- 229920005989 resin Polymers 0.000 claims abstract description 42
- 239000011347 resin Substances 0.000 claims abstract description 42
- 239000002184 metal Substances 0.000 claims abstract description 37
- 229910052751 metal Inorganic materials 0.000 claims abstract description 37
- 235000014676 Phragmites communis Nutrition 0.000 claims description 2
- 235000012054 meals Nutrition 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000000779 smoke Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明は反射型光結合半導体装置の樹脂成形方法に係
り、特にマークリーダ、煙感知器、物体の計数などに用
いられる反射型センサの樹脂成型に適用する。[Detailed Description of the Invention] [Technical Field of the Invention] The present invention relates to a resin molding method for a reflective optically coupled semiconductor device, and particularly to a resin molding method for a reflective sensor used in mark readers, smoke detectors, object counting, etc. apply to
従来の反射型光結合半導体装置の樹脂成形された形状を
第1図に示す、。図において、(1)は例えばエポキシ
樹脂で成形された外囲器ケース、(2a)。FIG. 1 shows the resin-molded shape of a conventional reflective optically coupled semiconductor device. In the figure, (1) is an envelope case molded, for example, from epoxy resin, and (2a) is.
(2b) 、 (2c) 、 (2a)いずれも金属リ
ードで、鉄または銅系の合金板で例えば厚さ0.2 m
のものがエツチングまたはプレス加工;二より形成され
ている。(2b), (2c), and (2a) are all metal leads, made of iron or copper alloy plates with a thickness of, for example, 0.2 m.
Those are etched or pressed; formed from two pieces.
また1発光と受光の機能をもつ側の面には銀めつき処理
等が施されている。そして、この金属リードは第2図お
よび$3図に示される成形金型(3)の上型C31)と
下型03の間に、上、下型の各対向する突起(31a)
と(32a)、(32b) 、また、(31b)と(3
2C) 。Furthermore, the side surface that has the functions of emitting light and receiving light is silver-plated. This metal lead is placed between the upper die C31) and the lower die 03 of the molding die (3) shown in FIG. 2 and FIG.
and (32a), (32b), and (31b) and (3
2C).
(32d)によって圧接されて樹脂成形が施される。(32d), and resin molding is performed.
次いで、金型な開いて取出された成形体は第4図に示さ
れるよう:二、金属リードの発光と受光の機能をもたせ
る側の面(図の上面)には金属9−ドの周縁に枠型の成
形樹脂(1a)が形成され、また。Next, the mold was opened and the molded body was taken out as shown in Figure 4: 2. On the surface of the metal lead that has the functions of emitting and receiving light (the top surface of the figure), there is a A frame-shaped molded resin (1a) is formed.
反対側の面(下面)には第5図1=示すように、前記金
型円柱状の突起(32a) 、 (32b) 、 (3
2c) 、 (32d)に^
よって形成される凹部(4a) 、 (4b) 、 (
4c) 、 (4d)にある樹脂ブロック部(1b)が
形成される。On the opposite surface (lower surface), as shown in FIG. 5, the mold cylindrical projections (32a), (32b),
Recesses (4a), (4b), (2c), (32d) formed by (4a), (4b), (
The resin block portions (1b) shown in 4c) and (4d) are formed.
次に第5図に示す裏返し状態:二保持し凹部(4a)
。Next, the upside down state shown in Figure 5: 2 holding recesses (4a)
.
(4b) 、 (4c) 、 (4d)に樹脂を注入し
、125℃にて約16時間加熱を施し固化させる。Resin is injected into (4b), (4c), and (4d), and heated at 125° C. for about 16 hours to solidify.
次に第4図に示す正常位にもどし、枠型の成形樹脂部(
1a)に囲まれた開底に露出している金属リード(2a
) 、 (2c)のチップベッド部迄二発光素子、受光
素子(いずれも破線にて図示)を、また、これらの電極
をボンディングワイヤにて対向する金属リード(2b)
、 (2d)に導出する。Next, return to the normal position shown in Figure 4, and place the frame-shaped molded resin part (
Metal leads (2a) exposed at the open bottom surrounded by
), two light-emitting elements and a light-receiving element (both shown with broken lines) are connected to the chip bed part of (2c), and metal leads (2b) are connected to these electrodes with bonding wires to face each other.
, derived as (2d).
次に上記枠型の成形樹脂部(1a)の回内に一例の赤外
透光性のエポキシ樹脂を注入し、125℃にて約16時
間加熱を施して固化させる。Next, an example of infrared-transparent epoxy resin is injected into the pronation of the molded resin part (1a) of the frame type, and heated at 125° C. for about 16 hours to solidify.
斜上の従来の樹脂成形ケースでは、金属リードで受発光
の機能をもたせる部分の表裏両面を樹脂成形時に成形金
型が直接接触する構造にすることにより形成した。この
ため、核部の金属リード表面に生じやすい成形樹脂の回
りこみによる樹脂パリは防止できた。しかし、表裏面と
も開放のため片面検出の一般タイブの製品、例えば反射
型センサに使用する場合には、裏面側の開放部分(4a
) 。In the conventional resin molded case of the slanted top, the front and back surfaces of the part that has the function of receiving and emitting light with metal leads are formed by having a structure in which the molding die directly contacts them during resin molding. For this reason, it was possible to prevent resin flaking due to the molding resin wrapping around the surface of the metal lead at the core. However, since both the front and back sides are open, when using a general type product with single-sided detection, such as a reflective sensor, the open part on the back side (4a
).
(4b) 、 (4c) 、 (4d)に遮光性の樹脂
を充填する必要があった。これは、使用時に外部光の回
わりこみによる誤動作を防止するためと、湿度等の侵入
による製品の信頼性低下を防止し、併せて製品の外観形
状を良好にするためであり、長時間の加熱を要するので
製造上の障害となっていた。It was necessary to fill (4b), (4c), and (4d) with a light-shielding resin. This is to prevent malfunctions caused by external light entering during use, to prevent product reliability from deteriorating due to the intrusion of humidity, etc., and to improve the appearance of the product. This was an obstacle in manufacturing.
この発明は上記従来の問題点に鑑み、金属リードに樹脂
パリを発生することなく樹脂成形すると同時に凹部を埋
める工程を不要とする樹脂成形の改良方法を提供する。In view of the above-mentioned conventional problems, the present invention provides an improved method of resin molding that eliminates the need for a process of filling recesses while molding metal leads with resin without causing resin flakes.
この発明にかかる反射型光結合半導体装置の樹脂成形方
法は、金属リードに直接樹脂成形して外囲器ケースを形
成するにあたり、金属リードにおける発光と受光の機能
をもたせる側の面には樹脂成型金型の一方の型を直接に
接触させ、前記金属リードの他方の面には金属リード支
持部材を介して前記樹脂成型金型の他方の型を接触させ
て成型を施すことを特徴とするものである。In the resin molding method for a reflective optically coupled semiconductor device according to the present invention, when forming an envelope case by directly molding resin onto a metal lead, resin molding is applied to the side of the metal lead that has the functions of emitting and receiving light. Molding is performed by bringing one mold of the mold into direct contact with the other surface of the metal lead, and by bringing the other mold of the resin molding mold into contact with the other surface of the metal lead through a metal lead support member. It is.
次に、この発明を1実施例につき図面を参照して詳細に
説明する。なお、実施例の説明にあたり、背景技術で説
明したところと変わらない部分については図面に同じ符
号を付して示し説明を省略する。Next, one embodiment of the present invention will be explained in detail with reference to the drawings. In the description of the embodiment, parts that are the same as those described in the background art are denoted by the same reference numerals in the drawings, and the description thereof will be omitted.
一実施例の反射型光結合半導体装置を示す第6図におい
て、これを発光と受光の機能が設けられる側については
従来と変わらないが、樹脂成形直後に上記の側と反対側
の面に従来化じていた凹部が金属リード支持部材(13
a) = (13b) −(13c) t (13d)
で充填されて第9図にも示されるようになっている。こ
の金属リート支持部材は樹脂成形によって予め形成され
、金型(ロ)の下型a2に第7図および第8図に示され
る支持部材保持部(12a) 、 (12g)・・・に
よって保持される。そして、上下型間に挿入された金属
リードは上型61)の突起部(31a) 、 (31b
)と、下型0りに保持された金属リート支持部材(13
a) 。In FIG. 6, which shows a reflective optically coupled semiconductor device according to an embodiment, the side where the light emitting and light receiving functions are provided is the same as the conventional one, but immediately after resin molding, the side opposite to the above side is The concave part that had turned into a metal lead support member (13
a) = (13b) - (13c) t (13d)
9, and filled with water as shown in FIG. This metal lead support member is formed in advance by resin molding, and is held in the lower mold a2 of the mold (b) by support member holding parts (12a), (12g), etc. shown in FIGS. 7 and 8. Ru. The metal leads inserted between the upper and lower molds are connected to the protrusions (31a) and (31b) of the upper mold 61).
) and the metal reet support member (13
a).
(13b) 、 (13c) 、 (13d)によって
挟圧され、樹脂成形が施されて上部に枠型の成形樹脂部
(1a)、下部に金属リード支持部材を含み一体の樹脂
ブロック部(14a)が、一体に金属リートの一部を樹
脂成形して外囲器ケース(14)を形成する。(13b), (13c), and (13d), resin molding is performed, and the upper part is a frame-shaped molded resin part (1a), and the lower part is an integrated resin block part (14a) containing a metal lead support member. However, a part of the metal reed is integrally molded with resin to form an envelope case (14).
なお、金属リード支持部材を発光側(13a)、(13
b)と、受光側(13c)、(13d)とで色分けして
すると、製品の取扱い(二便宜がある。Note that the metal lead support member is placed on the light emitting side (13a), (13
It is convenient to handle the product by color-coding the light-receiving side (13c) and (13d).
この発明によれば、樹脂成形に発生しやすい樹脂パリの
防止については従来と全く変らない上、従来裏面側(二
相ずる凹部な樹脂で充填する工程が必須であったものを
省略することができた。この樹脂充填は高温で長時間を
要する工程であることは既に述べたが、製造工程の短縮
、省力に大きな効果がある。また、仕上り表面も従来の
樹脂注入に比し、充填量の過不足なく達成できるので遥
かに美麗である。According to this invention, the prevention of resin cracks that tend to occur in resin molding is no different from the conventional method, and the process of filling the back side (concave portions with two phases) with resin, which was previously required, can be omitted. It was already mentioned that this resin filling is a process that requires a long time at high temperatures, but it has a great effect on shortening the manufacturing process and saving labor.In addition, the finished surface also has a lower filling amount than conventional resin injection. It is much more beautiful because it can be achieved without excess or deficiency.
さらに、金属リード支持部材を発光側と受光側とで色分
けして用いることができ、各々の側を製品について識別
できる利点もある。Furthermore, the metal lead support member can be used in different colors for the light-emitting side and the light-receiving side, which has the advantage that each side can be identified for the product.
第1図ないし第5図は従来の反射型光結合半導体装置の
樹脂成形方法(=かかり、第1図は外観を示す上面図、
第2図および第3図は樹脂成形工程を説明する断面図、
第4図は製品、の上面を示す斜視図、第5図は製品の下
面を示す斜視図、第6図以降は実施例の反射型光結合半
導体装置の樹脂成形方法にかかり、第6図は外観を示す
上面図、第7図および第8図は樹脂成形工程を説明する
断面図、第9図は製品の下面を示す斜視図である。
2a、2b、2c、2d 金属リード
la、14,14a 外囲器ケース
11 、12 、31 樹脂成形金型(12は下型、3
1は上型)
13a、13b、13c、13d 金属リード支持部材
代理人 弁理士 井 上 −男
−−ウC1
第 4 図
第 5 図
第 6 図
第7図
13Ct、3(1
第 8 図
t−trFigures 1 to 5 show a conventional resin molding method for a reflective optically coupled semiconductor device.
Figures 2 and 3 are cross-sectional views explaining the resin molding process;
FIG. 4 is a perspective view showing the top surface of the product, FIG. 5 is a perspective view showing the bottom surface of the product, and FIG. FIGS. 7 and 8 are cross-sectional views illustrating the resin molding process, and FIG. 9 is a perspective view showing the bottom of the product. 2a, 2b, 2c, 2d Metal leads la, 14, 14a Envelope case 11, 12, 31 Resin molding mold (12 is the lower mold, 3
1 is the upper mold) 13a, 13b, 13c, 13d Agent for metal lead support member Patent attorney Inoue - Male - C1 Fig. 4 Fig. 5 Fig. 6 Fig. 7 Fig. 13Ct, 3 (1 Fig. 8 t- tr
Claims (1)
反射型光結合半導体装置の樹脂成形(二あたり、金属リ
ードにおける受光と発光の機能をもたせる側の面には樹
脂成型金型の一方の型を直接に接触させ、前記金属リー
トの他方の面には金属リート支持部材を介して前記樹脂
成型金型の他方の型を接触させて成型を施すことを特徴
とする反射型光結合半導体装置の樹脂成形方法。Resin molding of a reflective optically coupled semiconductor device in which the envelope case is formed by resin molding directly onto the metal lead (for the second part, one side of the resin molding mold is placed on the side of the metal lead that has the light receiving and emitting functions. A reflective optically coupled semiconductor device, characterized in that molding is carried out by bringing the molds into direct contact with each other, and by bringing the other mold of the resin molding mold into contact with the other surface of the metal reet through a metal reed support member. resin molding method.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59070046A JPS60214573A (en) | 1984-04-10 | 1984-04-10 | Method of resin-molding for reflection-type photo- coupled semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59070046A JPS60214573A (en) | 1984-04-10 | 1984-04-10 | Method of resin-molding for reflection-type photo- coupled semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS60214573A true JPS60214573A (en) | 1985-10-26 |
Family
ID=13420235
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59070046A Pending JPS60214573A (en) | 1984-04-10 | 1984-04-10 | Method of resin-molding for reflection-type photo- coupled semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60214573A (en) |
-
1984
- 1984-04-10 JP JP59070046A patent/JPS60214573A/en active Pending
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