JPS60193392A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS60193392A
JPS60193392A JP59048161A JP4816184A JPS60193392A JP S60193392 A JPS60193392 A JP S60193392A JP 59048161 A JP59048161 A JP 59048161A JP 4816184 A JP4816184 A JP 4816184A JP S60193392 A JPS60193392 A JP S60193392A
Authority
JP
Japan
Prior art keywords
semiconductor laser
cylindrical lens
laser device
laser element
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59048161A
Other languages
Japanese (ja)
Inventor
Fumiko Tajiri
田尻　文子
Takeshi Hamada
健 浜田
Masahiro Kume
雅博 粂
Kunio Ito
国雄 伊藤
Masaru Wada
優 和田
Yuichi Shimizu
裕一 清水
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP59048161A priority Critical patent/JPS60193392A/en
Publication of JPS60193392A publication Critical patent/JPS60193392A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02253—Out-coupling of light using lenses

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Head (AREA)

Abstract

PURPOSE:To converge a light in vertical direction without providing a lens externally and the ellipticity of the titled device is brought close to 1 by a method wherein a cylindrical lens is provided on the laser beam emitting surface of the container in which a semiconductor laser element is sealed. CONSTITUTION:A semiconductor laser element 2 is arranged on the base plate 1 which performs an additional function as the heat sink of a semiconductor laser device. A cap 6 equipped with a cylindrical lens 5 is covered on the base plate 1. The light sent from the laser element 2 is brought close to the ellipticity 1. Through these procedures, the loss of light can be reduced without providing a cylindrical lens outside the device.

Description

【発明の詳細な説明】 （産業上の利用分野） 本発明は、半導体レーザ装置に関するものである。[Detailed description of the invention] (Industrial application field) The present invention relates to a semiconductor laser device.

（従来例の構成とその問題点） 近年、ビデオディスクやコンパクトディスクのピックア
ップに半導体レーザ装置が用いられている。しかし、半
導体レーザ装置から出るレーザ光のパターンは活性層に
水平な方向に短く垂直な方向には細長い楕円形である。(Structure of conventional example and its problems) In recent years, semiconductor laser devices have been used to pick up video discs and compact discs. However, the pattern of laser light emitted from the semiconductor laser device is an ellipse that is short in the horizontal direction to the active layer and elongated in the vertical direction.

このため半導体レーザ装置の使用に際しては、従来では
半導体レーザ装置の前面にシリンドリカルレンズを配置
して楕円率を１に近づけていた。For this reason, when using a semiconductor laser device, conventionally a cylindrical lens is arranged in front of the semiconductor laser device to bring the ellipticity close to 1.

第１図は、従来の半導体レーザ装置の一例を示したもの
であり、ヒートシンクを兼ねるベース板ｌ上に半導体レ
ーザ素子２が設けられており、さらに半導体レーザ素子
２を保護するために、吸収率の小さい平板ガラス３を備
えたキャップ４が半導体レーザ素子２を覆っている。こ
の構成では、半導体レーザ装置から発振した光は、外部
に設置したシリンドリカルレンズで楕円率を１に近づけ
なければならなかった。FIG. 1 shows an example of a conventional semiconductor laser device, in which a semiconductor laser element 2 is provided on a base plate l that also serves as a heat sink. A cap 4 having a small flat glass 3 covers the semiconductor laser element 2. In this configuration, the light oscillated from the semiconductor laser device had to have an ellipticity close to 1 using a cylindrical lens installed outside.

（発明の目的） 本発明は、上記欠点に鑑み、出射するレーザ光の楕円率
を１に近づけるようにした半導体レーザ装置を提供する
ものである。(Object of the Invention) In view of the above drawbacks, the present invention provides a semiconductor laser device in which the ellipticity of the emitted laser light is made close to 1.

（発明の構成） この目的を達成するために、本発明の半導体レーザ装置
は、シリンドリカルレンズを、キャップのビーム出射面
に設ける。この構成によって、発振した光は、一体化さ
れたシリンドリカルレンズを通過して垂直方向に収束さ
れ、楕円率が１に近づくこととなる。(Structure of the Invention) In order to achieve this object, the semiconductor laser device of the present invention includes a cylindrical lens on the beam exit surface of the cap. With this configuration, the oscillated light passes through the integrated cylindrical lens and is converged in the vertical direction, so that the ellipticity approaches 1.

（実施例の説明） 第２図は、本発明の一実施例の半導体レーザ装置を示し
たものであり、ヒートシンクを兼ねるベース板ｌに半導
体レーザ素子２を設け、その上から、シリンドリカルレ
ンズ５を備えたキャップ６を被せている。キャップ６の
形は直方体でもよいし円柱にしてシリンドリカルレンズ
をつけてもよい。半導体レーザ素子２から発振した光は
シリンドリカルレンズ５によって楕円率１に近づけるこ
とができる。(Description of an Embodiment) FIG. 2 shows a semiconductor laser device according to an embodiment of the present invention, in which a semiconductor laser element 2 is provided on a base plate l that also serves as a heat sink, and a cylindrical lens 5 is mounted on the base plate l. It is covered with the provided cap 6. The shape of the cap 6 may be a rectangular parallelepiped or a cylinder and a cylindrical lens may be attached thereto. The light oscillated from the semiconductor laser element 2 can be made to have an ellipticity close to 1 by the cylindrical lens 5.

（発明の効果） 以上説明したように、本発明によれば、半導体レーザ素
子とシリンドリカルレンズを一体的に組み合わせること
により、外部にシリンドリカルレンズを備える必要がな
くなり、光の損失を小さくすることができる。(Effects of the Invention) As explained above, according to the present invention, by integrally combining a semiconductor laser element and a cylindrical lens, there is no need to provide an external cylindrical lens, and light loss can be reduced. .

【図面の簡単な説明】[Brief explanation of drawings]

第１図は、従来例の構成図、第２図は、本発明の一実施
例の構成図である。 １　・・・ベース板、　２　・・・半導体レーザ素子、
５　・・・シリンドリカルレンズ、　６　・・・シリン
ドリカルレンズを設けたキャッス 特許出願人　松下電器産業株式会社FIG. 1 is a block diagram of a conventional example, and FIG. 2 is a block diagram of an embodiment of the present invention. 1...Base plate, 2...Semiconductor laser element,
5... Cylindrical lens, 6... Cassette provided with a cylindrical lens Patent applicant Matsushita Electric Industrial Co., Ltd.

Claims (1)

【特許請求の範囲】[Claims] 半導体レーザ素子が封入された容器のレーザ光出射面に
シリンドリカルレンズを備えていることを特徴とする半
導体レーザ装置。A semiconductor laser device characterized in that a cylindrical lens is provided on a laser light emitting surface of a container in which a semiconductor laser element is sealed.
JP59048161A 1984-03-15 1984-03-15 Semiconductor laser device Pending JPS60193392A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59048161A JPS60193392A (en) 1984-03-15 1984-03-15 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59048161A JPS60193392A (en) 1984-03-15 1984-03-15 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS60193392A true JPS60193392A (en) 1985-10-01

Family

ID=12795656

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59048161A Pending JPS60193392A (en) 1984-03-15 1984-03-15 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS60193392A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02125687A (en) * 1988-11-04 1990-05-14 Sony Corp Semiconductor laser device
US8910807B2 (en) 2009-05-20 2014-12-16 Manitowoc Crane Companies, Llc Compressible stop member for use on a crane

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02125687A (en) * 1988-11-04 1990-05-14 Sony Corp Semiconductor laser device
US8910807B2 (en) 2009-05-20 2014-12-16 Manitowoc Crane Companies, Llc Compressible stop member for use on a crane

Similar Documents

Publication Publication Date Title
US4167744A (en) Electroluminescent semiconductor device having optical fiber window
JPS58145169A (en) Optical semiconductor device
EP0466975B1 (en) Semiconductor light-emitting device
JPS61147585A (en) Light-emitting diode
NO165515C (en) OPTICAL ELEMENT MOUNTING SOCKET.
JPS5831735B2 (en) Kogaku Techi Handout Taisouchi
JPS60193392A (en) Semiconductor laser device
JP3056513B2 (en) Optoelectronic converter
JPS5925284A (en) Photosemiconductor device
JPS595985Y2 (en) Optical semiconductor device
JPS63234585A (en) Semiconductor laser array device
JPS6025914B2 (en) semiconductor light emitting device
JPH02297988A (en) Optical coupling system using optical semiconductor device
JPS6489546A (en) Semiconductor device
JPH0258206U (en)
JPH0334387A (en) Semiconductor laser device
JPS59103462U (en) light emitting diode device
JPH04101470A (en) Optical semiconductor device
JPS61210759A (en) Solid-state image pickup device
JPS55107289A (en) Semiconductor laser device
JPS59200481A (en) Electronic device
JPS6196778A (en) Light emitting device for coupling optical fiber
JPS6130092A (en) Laser device
JPS60193391A (en) Semiconductor laser device
JPH0390207U (en)