JPS6019181B2 - solid-state image sensor - Google Patents
solid-state image sensorInfo
- Publication number
- JPS6019181B2 JPS6019181B2 JP52082211A JP8221177A JPS6019181B2 JP S6019181 B2 JPS6019181 B2 JP S6019181B2 JP 52082211 A JP52082211 A JP 52082211A JP 8221177 A JP8221177 A JP 8221177A JP S6019181 B2 JPS6019181 B2 JP S6019181B2
- Authority
- JP
- Japan
- Prior art keywords
- solid
- state image
- image sensor
- electrode
- hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Description
【発明の詳細な説明】
本発明は固体撮像素子に関するもので、感度の向上を図
ることを目的とする。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a solid-state image sensor, and an object of the present invention is to improve sensitivity.
一般に固体撮像素子はシリコンの単結晶で作られている
ため、分光感度特性で青色光の部分が低下する。Generally, solid-state image sensors are made of single crystal silicon, so their spectral sensitivity is reduced in the blue light portion.
更に電荷転送素子を構成する転送用のポリシリコンゲー
ト等を通して結像させるため、この透過率にも左右され
て更に分光感度特性が悪くなる。この改良の手段として
、受光部の転送ゲートに孔をあげるか、あるいは厚さを
薄くして光の透過率を高くすることが考えられている。Furthermore, since the image is formed through a transfer polysilicon gate or the like constituting the charge transfer element, the spectral sensitivity characteristics are further deteriorated depending on the transmittance. As a means of improving this, it is being considered to increase the light transmittance by making holes in the transfer gate of the light receiving section or by reducing the thickness.
しかし転送に障害を与えないためには転送ゲートに設け
る孔の大きさに限りがあるため効果も限られてしまつ。
本発明はこのように孔をあげた部分あるいは薄くした部
分にレンチキュラーレンズで光を集中させ、孔あげの効
果を高めることにある。However, in order not to impede the transfer, there is a limit to the size of the hole provided in the transfer gate, which limits the effectiveness.
The purpose of the present invention is to use a lenticular lens to concentrate light on the raised or thinned part of the hole, thereby enhancing the effect of opening the hole.
以下にその実施例について説明する。Examples thereof will be described below.
第１図および第２図において１は電荷転送素子を構成す
る転送電極、２はその転送電極１に説けた孔、３はチャ
ンネルストップ層である。４は画素と同じピッチのレン
チキュラーレンズ、５はシリコン基板である。In FIGS. 1 and 2, 1 is a transfer electrode constituting a charge transfer element, 2 is a hole formed in the transfer electrode 1, and 3 is a channel stop layer. 4 is a lenticular lens having the same pitch as the pixels, and 5 is a silicon substrate.
すなわち転送電極側から入射した光ａはしンチキュラー
レンズ４で屈折し、丁度、孔２に集中するように構成し
ているため、電極を透過する光の損失が減少し、感度を
高めることができる。In other words, since the structure is such that the light a incident from the transfer electrode side is refracted by the scintillating lens 4 and concentrated on the hole 2, the loss of light passing through the electrode is reduced and the sensitivity can be increased. can.
なお上記実施例では転送電極１に孔２を設けているが、
その部分の電極１を薄く構成（薄肉部）しても同様の効
果を得ることができる。上記実施例より明らかなように
本発明によれば電極自身を加工するとともにレンチキュ
ラーレンズを絹合せたことにより電極部での損失が少く
、感度のよい素子が得られる。Note that in the above embodiment, the hole 2 is provided in the transfer electrode 1;
Similar effects can be obtained even if the electrode 1 in that portion is made thinner (thin portion). As is clear from the above embodiments, according to the present invention, by processing the electrode itself and bonding the lenticular lens with silk, an element with low loss at the electrode portion and high sensitivity can be obtained.
【図面の簡単な説明】
第１図は本発明の一実施例による間体撮像素子の要部平
面図、第２図は第１図におけるＡ一Ａ線断面図である。
１・・・・・・転送電極、２・・・・・・孔、４・・・
・・・レンチキユラーレンズ。第１図
第２図BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a plan view of essential parts of an interbody imaging device according to an embodiment of the present invention, and FIG. 2 is a sectional view taken along line A--A in FIG. 1. 1... Transfer electrode, 2... Hole, 4...
...Lenticular lens. Figure 1 Figure 2
Claims (1)
素と同じピツチのレンチキユラーレンズを設け、上記入
射光を上記各孔もしくは薄肉部に集中させることを特徴
とする固体撮像素子。1. A solid-state imaging device characterized in that an electrode is provided with a hole or a thin wall portion, and a lenticular lens having the same pitch as a pixel is provided on the incident light side, and the incident light is concentrated on each of the holes or the thin wall portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP52082211A JPS6019181B2 (en) | 1977-07-08 | 1977-07-08 | solid-state image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP52082211A JPS6019181B2 (en) | 1977-07-08 | 1977-07-08 | solid-state image sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5417620A JPS5417620A (en) | 1979-02-09 |
| JPS6019181B2 true JPS6019181B2 (en) | 1985-05-15 |
Family
ID=13768076
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP52082211A Expired JPS6019181B2 (en) | 1977-07-08 | 1977-07-08 | solid-state image sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6019181B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55124366A (en) * | 1979-03-19 | 1980-09-25 | Fuji Photo Film Co Ltd | Pickup device |
| JPS5844865A (en) * | 1981-09-10 | 1983-03-15 | Fuji Photo Optical Co Ltd | Solid-state image pickup device |
| JPS5992568A (en) * | 1982-11-18 | 1984-05-28 | Mitsubishi Electric Corp | Photo receptor such as solid-state image pickup element and manufacture thereof |
| CA1223969A (en) * | 1984-10-31 | 1987-07-07 | William M. Johnson | Microcode control of a parallel architecture microprocessor |
| JPH07225303A (en) * | 1993-12-16 | 1995-08-22 | Sharp Corp | Microlens substrate, liquid crystal display element using the same, and liquid crystal projector device |
-
1977
- 1977-07-08 JP JP52082211A patent/JPS6019181B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5417620A (en) | 1979-02-09 |
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