JPS6019097B2 - Manufacturing method of thermionic emissive material - Google Patents
Manufacturing method of thermionic emissive materialInfo
- Publication number
- JPS6019097B2 JPS6019097B2 JP52116869A JP11686977A JPS6019097B2 JP S6019097 B2 JPS6019097 B2 JP S6019097B2 JP 52116869 A JP52116869 A JP 52116869A JP 11686977 A JP11686977 A JP 11686977A JP S6019097 B2 JPS6019097 B2 JP S6019097B2
- Authority
- JP
- Japan
- Prior art keywords
- supporting metal
- thermionic
- boride
- tantalum
- sputter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 title claims description 31
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 21
- 239000000126 substance Substances 0.000 claims description 15
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 11
- 238000004544 sputter deposition Methods 0.000 claims description 9
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 6
- 229910052791 calcium Inorganic materials 0.000 claims description 5
- 239000011575 calcium Substances 0.000 claims description 5
- 239000010955 niobium Substances 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
- 229910026551 ZrC Inorganic materials 0.000 claims description 3
- OTCHGXYCWNXDOA-UHFFFAOYSA-N [C].[Zr] Chemical compound [C].[Zr] OTCHGXYCWNXDOA-UHFFFAOYSA-N 0.000 claims description 3
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 3
- 229910003468 tantalcarbide Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- ZVWKZXLXHLZXLS-UHFFFAOYSA-N zirconium nitride Chemical compound [Zr]#N ZVWKZXLXHLZXLS-UHFFFAOYSA-N 0.000 claims description 2
- LRTTZMZPZHBOPO-UHFFFAOYSA-N [B].[B].[Hf] Chemical compound [B].[B].[Hf] LRTTZMZPZHBOPO-UHFFFAOYSA-N 0.000 claims 1
- VDZMENNHPJNJPP-UHFFFAOYSA-N boranylidyneniobium Chemical compound [Nb]#B VDZMENNHPJNJPP-UHFFFAOYSA-N 0.000 claims 1
- XTDAIYZKROTZLD-UHFFFAOYSA-N boranylidynetantalum Chemical compound [Ta]#B XTDAIYZKROTZLD-UHFFFAOYSA-N 0.000 claims 1
- 230000004888 barrier function Effects 0.000 description 9
- 239000013078 crystal Substances 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 229910025794 LaB6 Inorganic materials 0.000 description 2
- 229910004533 TaB2 Inorganic materials 0.000 description 2
- 239000010406 cathode material Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910003862 HfB2 Inorganic materials 0.000 description 1
- 229910007948 ZrB2 Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- VWZIXVXBCBBRGP-UHFFFAOYSA-N boron;zirconium Chemical compound B#[Zr]#B VWZIXVXBCBBRGP-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Solid Thermionic Cathode (AREA)
Description
【発明の詳細な説明】
本発明は、熱電子放射材料の製造法、特に六棚化カルシ
ウム型構造を有する材料を主材料とする熱電子放射材料
の製造法に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for producing a thermionic emissive material, particularly a method for producing a thermionic emissive material whose main material is a material having a hexagonal calcium structure.
六棚化ランタン（山Ｂ６）に代表される六棚化カルシウ
ム型構造を有する材料は、仕事関数が４・さく、熱電子
放射陰極としてはロッド状のものが一股的に使用されて
いる。しかし、この熱電子放射材料を高温下で作動させ
た場合、通常の支持金属であるタングステン、タンタル
などど化学反応を起こし、熱電子放射材が風化、支持金
属が腕化するなど長時間安定に作動させることが困難で
あった。Materials having a six-shelf calcium structure represented by six-shelf lanthanum (mountain B6) have a work function of 4, and rod-shaped materials are commonly used as thermion-emitting cathodes. However, when this thermionic emitting material is operated at high temperatures, the usual supporting metals such as tungsten and tantalum undergo chemical reactions, causing the thermionic emitting material to weather and the supporting metal to form arms, resulting in long-term stability. It was difficult to operate.
この困難を解決するために、加熱用機体を熱電子放射材
と接触せずに、熱電子放射材の支持は冷却器を備えた機
体によって実現し、もって化学反応を阻止する提案（袴
公昭４５−４０５７６）があるが、このような提案では
、構造が複雑であり、しかも熱電子放射陰極が通常使用
される個所、例えば電子顕微鏡陰極、鰭子管陰極などで
は加熱時の電力は小さく１０ヮト以下が普通である。従
って上記のような構造では加熱電力が大きすぎるという
欠点があった。本発明はこれらの欠点を解決したすぐれ
た熱電子放射陰極材料を提供しようとするものである。In order to solve this difficulty, a proposal was made to prevent the chemical reaction by preventing the heating body from coming into contact with the thermionic radiation material and by supporting the thermionic radiation material by a body equipped with a cooler. -40576), but such a proposal has a complicated structure, and in places where thermionic emission cathodes are normally used, such as electron microscope cathodes and fin tube cathodes, the power required for heating is small (10%). It is normal for it to be less than Therefore, the above structure has the disadvantage that the heating power is too large. The present invention aims to provide an excellent thermionic-emitting cathode material that overcomes these drawbacks.
本発明は、六棚化カルシウム型構造を有する無機物質に
、これと反応し難い物質をスパッタ‐蒸着した後、さら
にその上に支持金属と、前記の無機物質と反応し難い物
質とも混合しスパッタ‐蒸着を行ない、徐々に支持金属
の割合を増加して、最終的には支持金属だけをスパッタ
‐蒸着することを特徴とする熱電子放射陰極材料の製造
法である。以下本発明について、さらに説明する。本発
明は前記したように六棚化カルシウム構造を有する無機
物質に、これと反応し難い物質（以下障壁材料という）
と支持金属との間に、これら混合物からなる蒸着層を設
けたことを特徴とするものである。これを図面に従って
説明すると、第１図は、六棚化カルシウム構造を有する
無機物質に障壁層、支持金属層を蒸着した熱電子放射材
料の断面図である。The present invention involves sputter-depositing a substance that does not easily react with an inorganic substance having a six-shelf calcium type structure, and then sputtering a supporting metal and a substance that does not easily react with the inorganic substance. - A method for producing a thermionic-emitting cathode material, which is characterized by carrying out vapor deposition, gradually increasing the proportion of the supporting metal, and finally sputter-evaporating only the supporting metal. The present invention will be further explained below. As described above, the present invention uses an inorganic substance having a six-shelf calcium structure, and a substance (hereinafter referred to as a barrier material) that is difficult to react with the inorganic substance having a hexagonal calcium structure.
The device is characterized in that a vapor-deposited layer made of a mixture of these is provided between the metal and the supporting metal. To explain this according to the drawings, FIG. 1 is a cross-sectional view of a thermionic emission material in which a barrier layer and a support metal layer are deposited on an inorganic material having a hexagonal calcium structure.
１は、六棚化カルシウム型構造を有する無機物質、２は
障壁層、３は障壁材料と支持金属材との混合層、４は支
持金属層、である。1 is an inorganic substance having a six-shelf calcium type structure, 2 is a barrier layer, 3 is a mixed layer of a barrier material and a supporting metal material, and 4 is a supporting metal layer.
また第２図は本発明品の使用例を示した説明図であって
、スパッタ−蒸着後、支持台に熱電子放射材料を取付け
たものである。Further, FIG. 2 is an explanatory view showing an example of use of the product of the present invention, in which a thermionic emission material is attached to a support base after sputter deposition.
５はセラミック支持台を示し、６は電極、７は支持金属
線である。5 is a ceramic support base, 6 is an electrode, and 7 is a support metal wire.
第１図に示したような熱子放射材料を、第２図のような
電子放射陰極として使用することができる。障壁材料の
スパッタ一物質としては、熱電子放射材および支持金属
と反応し難く、１９００℃上の融点を持ち、かつ１６０
ぴＣにおける片衡蒸気圧が１０‐５Ｔｏｒｒ以下のもの
であれば、全て使用可能であるが、棚化物では、棚化ニ
オブ（Ｎｂ＆）、棚化ジルコニウム（ＺｒＢ２）、棚化
ハフニウム（ＨｆＢ２）、棚化タンタル（ＴａＢ２）、
炭化物では、炭化タンタル（ＴａＣ）、炭化ジルコニウ
ム（ＺｒＣ）、窒化物では、窒化ジルコニウム（ＺｒＮ
）、窒化タンタル（ＴａＮ）などが特に好ましい。又、
支持金属のスパッタ一物質としては、タンタル（Ｔａ）
、タングステン（Ｗ）、ニオブ（Ｎｂ）、モリブデン（
Ｍｏ）などが特に好しし、。 ３本発明品
は、小電力で作動し、長寿命であり、かつ電子放射特性
に優れ、冷却、加熱にし、熱電子放射陰極を得ることが
できる。スパッタ−葵着では、通常の真空蒸着と比較し
て基村への密着性が極めて良好で繊密な膜が形成可能で
ある。又、蒸３着と同時にガスが基材表面をスパッタ−
する効果があるので、基材の表面がクリーニングされ、
これも密着性を良くする理由の一つである。さらに障壁
層と支持金属との間に生ずる熱堀彰張率の差による歪応
力は、中間に障壁材料と支持金属を同時子にスパッタ‐
蒸着することにより緩和できる。本実施例では、ＬａＢ
６単結晶について説明するが、この方法は、他の六棚化
カルシウム構造を有する熱電子放射材料、例えば棚化バ
リウム、棚化イットリウム、棚化ユーロピウム、棚化ガ
ドリニウムなどの六棚化物単結晶熱電子材料も適用でき
る。更に、ホットプレス法等により成型した多結晶嬢結
体も適用できる。タ 以下実施例によって本発明を説明
する。A thermon-emitting material as shown in FIG. 1 can be used as an electron-emitting cathode as shown in FIG. As a sputtering substance for the barrier material, it is difficult to react with the thermionic emitting material and supporting metal, has a melting point of 1900°C or higher, and has a melting point of 160°C.
Any material with an equilibrium vapor pressure of 10-5 Torr or less can be used, but shelved niobium (Nb&), shelved zirconium (ZrB2), shelved hafnium (HfB2), Shelved tantalum (TaB2),
Carbides include tantalum carbide (TaC) and zirconium carbide (ZrC), and nitrides include zirconium nitride (ZrN).
), tantalum nitride (TaN), etc. are particularly preferred. or,
Tantalum (Ta) is used as a sputtering material for the supporting metal.
, tungsten (W), niobium (Nb), molybdenum (
Mo) etc. are particularly preferred. 3. The product of the present invention operates with low power, has a long life, has excellent electron emission characteristics, and can be cooled and heated to obtain a thermionic emission cathode. Sputter deposition can form a dense film with extremely good adhesion to the substrate compared to normal vacuum deposition. Also, at the same time as the third vapor deposition, the gas sputters on the substrate surface.
This has the effect of cleaning the surface of the base material,
This is also one of the reasons for improving adhesion. Furthermore, the strain stress caused by the difference in thermal elongation between the barrier layer and the supporting metal can be reduced by sputtering the barrier material and the supporting metal at the same time.
It can be alleviated by vapor deposition. In this example, LaB
6 single crystal, but this method can also be applied to other thermionic emissive materials having a hexagonal calcium structure, such as hexagonal calcium shelving, yttrium shelving, europium shelving, gadolinium shelving, etc. Electronic materials can also be applied. Furthermore, a polycrystalline body formed by hot pressing or the like can also be used. The present invention will be explained below with reference to Examples.
実施例 １ＴａＮおよびＴａをスパッターターゲツトと
し、３×１０‐３Ｔｏｒｒのアルゴン雰囲気中、加速電
圧弧Ｖの条件で、スパッタ‐蒸着を行なった。被ス０バ
ッター物質はＬａ＆単結晶チップであり「該チップの先
端は熱電子放射材料として使用するため黍着物が付着し
ないようにアルミ箔で覆った。まず最初にＴａＮを３０
分間スパッタ‐蒸着し、次の３０分間ではＴａとＴａＮ
を共にスパッタ‐蒸着した夕が、この間にＴａＮの蒸着
量を徐々に少なくし、逆にＴａの蒸着量を徐々に増加さ
せ、最終的にはＴａだけのスパッタ−蒸着をさらに３の
分間行なった。得られた陰極をスポット溶接によりＷ線
と結合し、５×１０‐５Ｔｍｒの真空下でＬａＢ６単結
晶チップ先端の温度が１６００ｏｏ、５０畑時間加熱し
たがＬａＢ６単結晶部分には何の変化も見られなかった
。実施例 ２
スパッターターゲットとして、ＴａＢとＷを使用し、実
施例１と同じ条件で、ＬａＢ単結晶上にスパッタ‐蒸着
を行なった。Example 1 Sputter-evaporation was carried out using TaN and Ta as sputter targets in an argon atmosphere of 3.times.10@-3 Torr under conditions of acceleration voltage arc V. The batter material to be scorched was a La & single crystal chip, and the tip of the chip was covered with aluminum foil to prevent dust from adhering to it because it was used as a thermionic emission material.
Sputter-deposit for 30 minutes, then Ta and TaN for 30 minutes.
During this time, the amount of TaN was gradually reduced, and the amount of Ta was gradually increased, and finally, sputter-deposition of only Ta was performed for an additional 3 minutes. . The obtained cathode was connected to a W wire by spot welding, and heated under a vacuum of 5 × 10-5 Tmr at a temperature of 1600 oo at the tip of the LaB6 single crystal tip for 50 hours, but no change was observed in the LaB6 single crystal part. I couldn't. Example 2 Sputter-evaporation was performed on a LaB single crystal under the same conditions as in Example 1 using TaB and W as sputter targets.
すわち、仏Ｂ６単結晶に直接Ｔａ＆を３０分間スパッタ
葵着し、次に３０分階ｍａ＆とＷを同時に蒸着しながら
徐々にＴａＢ２の量を減少させ、逆にＷの量を増加させ
、最終的にはＷだけのスパッタ‐蒸着を３０分間実施し
た。こうして得られた陰極をスポット溶接によりＴａ線
と結合し、３×１０‐５Ｔｏｒｒの真空下で、ＬａＢ単
結晶チップ先端温度が１７００ｑｏになるように３の砂
間加熱た後、急冷し、すぐに又加熱するサイクルを１０
０の司繰り返したが、仏Ｂ６単結晶部分には何の変化も
なかった。That is, Ta& was directly sputter-deposited on the B6 single crystal for 30 minutes, then Ma& and W were simultaneously deposited for 30 minutes, gradually decreasing the amount of TaB2, conversely increasing the amount of W, and finally Specifically, sputter-deposition of W alone was performed for 30 minutes. The cathode thus obtained was joined to a Ta wire by spot welding, heated in a sand bath under a vacuum of 3 x 10-5 Torr so that the tip temperature of the LaB single crystal tip reached 1700 qo, then rapidly cooled and immediately 10 heating cycles
0 repeated, but there was no change in the French B6 single crystal part.
第１図は、本発明の実施例の熱電子放射材料の断面図：
第２図は、本発明品の使用例の説明図である。
符号１・・・六棚化カルシウム型構造を有する無機物質
、２・・・障壁層、３・・・障壁材料と支持金属材との
混合層、４・・・支持金属層、５・・・セラミック支持
台、６・・・電極、７・・・支持金属線。
※１図
茅２図FIG. 1 is a cross-sectional view of a thermionic emission material according to an embodiment of the present invention:
FIG. 2 is an explanatory diagram of an example of use of the product of the present invention. Reference numeral 1... Inorganic substance having a six-shelf calcium type structure, 2... Barrier layer, 3... Mixed layer of barrier material and supporting metal material, 4... Supporting metal layer, 5... Ceramic support base, 6... electrode, 7... support metal wire. *1 figure, 2 figures
Claims (1)
反応し難い物質をスパツター蒸着した後、その上に支持
金属と前記の反応し難い物質とを混合してスパツター蒸
着を行ない、徐々に支持金属との割合を増加して最終的
には支持金属だけをスパツター蒸着することを特徴とす
る熱電子放射材料の製造法。 ２ 反応し難い物質が硼化ニオブ、硼化ジルコニウム、
硼化ハフニウム、硼化タンタルから撰ばれた硼化物、炭
化タンタル、炭化ジルコニウム、から撰ばれた炭化物、
窒化ジルコニウム、窒化タンタルから撰ばれた窒化物で
ある特許請求の範囲第１項記載の熱電子放射材料の製造
法。 ３ 支持金属がタンタル、タングステン、ニオブ、モリ
ブデンから撰ばれた１種以上の金属である特許請求の範
囲第１項記載の熱電子放射材料の製造法。[Claims] 1. Sputter deposition of a substance that does not easily react with an inorganic substance having a calcium hexaboride type structure, and then mix and sputter deposit a supporting metal and the above-mentioned substance that does not easily react with the inorganic substance. A method for producing a thermionic emitting material, which is characterized by gradually increasing the proportion of the supporting metal and finally sputter-depositing only the supporting metal. 2 Substances that are difficult to react with are niobium boride, zirconium boride,
Hafnium boride, boride selected from tantalum boride, tantalum carbide, zirconium carbide, carbide selected from
A method for producing a thermionic emission material according to claim 1, wherein the material is a nitride selected from zirconium nitride and tantalum nitride. 3. The method for producing a thermionic emission material according to claim 1, wherein the supporting metal is one or more metals selected from tantalum, tungsten, niobium, and molybdenum.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP52116869A JPS6019097B2 (en) | 1977-09-30 | 1977-09-30 | Manufacturing method of thermionic emissive material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP52116869A JPS6019097B2 (en) | 1977-09-30 | 1977-09-30 | Manufacturing method of thermionic emissive material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5451465A JPS5451465A (en) | 1979-04-23 |
| JPS6019097B2 true JPS6019097B2 (en) | 1985-05-14 |
Family
ID=14697633
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP52116869A Expired JPS6019097B2 (en) | 1977-09-30 | 1977-09-30 | Manufacturing method of thermionic emissive material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6019097B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0410632Y2 (en) * | 1984-05-04 | 1992-03-16 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AT15991U1 (en) * | 2017-05-12 | 2018-10-15 | Plansee Se | High-temperature component |
| CN107190194B (en) * | 2017-06-16 | 2018-06-22 | 华北电力大学 | A kind of preparation method of boride ceramic particles enhancing niobium molybdenum-base composite material |
-
1977
- 1977-09-30 JP JP52116869A patent/JPS6019097B2/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0410632Y2 (en) * | 1984-05-04 | 1992-03-16 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5451465A (en) | 1979-04-23 |
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