JPS6148207B2 - - Google Patents
Info
- Publication number
- JPS6148207B2 JPS6148207B2 JP13990378A JP13990378A JPS6148207B2 JP S6148207 B2 JPS6148207 B2 JP S6148207B2 JP 13990378 A JP13990378 A JP 13990378A JP 13990378 A JP13990378 A JP 13990378A JP S6148207 B2 JPS6148207 B2 JP S6148207B2
- Authority
- JP
- Japan
- Prior art keywords
- oxide
- base metal
- cathode
- carbide layer
- electron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010953 base metal Substances 0.000 claims description 38
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 238000002844 melting Methods 0.000 claims description 11
- 229910052721 tungsten Inorganic materials 0.000 claims description 10
- 229910052750 molybdenum Inorganic materials 0.000 claims description 8
- 230000001603 reducing effect Effects 0.000 claims description 8
- 229910052726 zirconium Inorganic materials 0.000 claims description 8
- 229910052715 tantalum Inorganic materials 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- 229910052758 niobium Inorganic materials 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 229910052720 vanadium Inorganic materials 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 229910052735 hafnium Inorganic materials 0.000 claims description 3
- 229910052776 Thorium Inorganic materials 0.000 claims description 2
- 229910052770 Uranium Inorganic materials 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 150000001247 metal acetylides Chemical class 0.000 claims 1
- 238000010406 interfacial reaction Methods 0.000 description 7
- 239000007789 gas Substances 0.000 description 6
- 230000008018 melting Effects 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 229910052702 rhenium Inorganic materials 0.000 description 4
- 239000004215 Carbon black (E152) Substances 0.000 description 3
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229930195733 hydrocarbon Natural products 0.000 description 3
- 150000002430 hydrocarbons Chemical class 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 240000008168 Ficus benjamina Species 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910017305 Mo—Si Inorganic materials 0.000 description 1
- 229910017709 Ni Co Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910003267 Ni-Co Inorganic materials 0.000 description 1
- 229910003296 Ni-Mo Inorganic materials 0.000 description 1
- 229910003262 Ni‐Co Inorganic materials 0.000 description 1
- 229910008938 W—Si Inorganic materials 0.000 description 1
- 229910007926 ZrCl Inorganic materials 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- DDTIGTPWGISMKL-UHFFFAOYSA-N molybdenum nickel Chemical compound [Ni].[Mo] DDTIGTPWGISMKL-UHFFFAOYSA-N 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/13—Solid thermionic cathodes
- H01J1/14—Solid thermionic cathodes characterised by the material
Landscapes
- Solid Thermionic Cathode (AREA)
Description
本発明は電子管用酸化物陰極、特にＷ，Mo，
Re，Taなどの高融点金属を含むNi合金を基体金
属とする酸化物陰極に関するものである。
最近、酸化物陰極を備えた電子管において、電
源スイツチ投入後、電子放射が起るまでの時間を
短縮させるために基体金属板の板厚を薄くしてカ
ソードの熱容量を減少させたり、あるいは基体金
属に直接通電加熱するいわゆる直熱方式の陰極を
用いることが検討されている。この場合、基体金
属は、従来より大きな高温強度をもつ事が必要と
なり、従来のNiに微量の還元性元素を含む基体
金属にかわつてＷ，Mo，Re，Taなどの高融点金
属を含む合金が基体金属として用いられている。
ところが、このような高融点金属は、Niに比
べて酸化しやすい特性を有している。このために
高融点金属を含む合金を基体金属とした酸化物陰
極を通常の製造方法で製作すると、高融点金属が
酸化し、この高融点金属酸化物とアルカリ土類金
属酸化物あるいはアルカリ土類炭酸塩との界面間
に急激な反応が起る。
そして、この界面反応の反応速度、反応生成物
量は、従来のNiに微量の還元性元素を含む基体
金属とアルカリ土類金属酸化物（以下オキサイド
という）との反応に比べると比較にならないほど
大きい。このように基体金属とオキサイド間に多
量の界面反応が起ると、基体金属とオキサイドと
の接触状況が大幅に変化し、オキサイドが基体金
属から剥れたり、あるいはオキサイドと基体金属
との接触が不十分で陰極動作中のオキサイド層の
温度が降下するなどしてオキサイドの電子放射量
が低下し、カソードとして全く実用にならなくな
つてしまうなどの欠点を有していた。
したがつて、本発明の目的は上記の欠点を除去
し、オキサイドと基体金属間の界面反応を防止さ
せ、電子放射寿命を長期間にわたつて維持できる
ようにした電子管用酸化物陰極を提供することに
ある。
このような目的を達成するために本発明による
電子管用酸化物陰極は、基体金属表面に化学的に
安定なSi，Ｂ，Ti，Zr，Hf，Ｖ，Nb，Ta，
Mo，Ｗなどの炭化物の少なくとも一種類の炭化
物層を設けて製造工程中に生じるオキサイドと基
体金属間の界面反応を抑制するようにしたもので
ある。以下本発明による電子管用酸化物陰極につ
いて詳細に説明する。
まず、電子管用酸化物陰極を構成する基体金属
板は、Ｗ，Mo，Re，Taなどの高融点金属の少な
くとも一種類を２重量％以上と、必要に応じて
Zr，Mg，Siなどの還元性元素と、残りNiを含む
合金から形成される。このような合金の例は次の
通り。
Ni−Ｗ−Mg（重量組成72.4％：27.5：0.1）
Ni−Ｗ−Mo−Mg（80.9：2.0：17.0：0.1）
Ni−Ｗ−Re−Mg（82.9：2.0：15.0：0.1）
Ni−Ｗ−Mo−Re−Mg（80.1：2.0：15.8：2.0：
0.1）
Ni−Ｗ−Si（72.4：27.5：0.1）
Ni−Ｗ−Mo−Si（80.9：2.0：17.0：0.1）
Ni−Ｗ−Re−Si（82.9：2.0：15.0：0.1）
Ni−Ｗ−Mo−Re−Si（80.1：2.0：15.8：2.0：
0.1）
Ni−Ｗ−Zr（72.1：27.5：0.4）
Ni−Ｗ−Mo−Zr（80.6：2.0：17.0：0.4）
Ni−Ｗ−Re−Zr（82.6：2.0：15.0：0.4）
Ni−Ｗ−Mo−Re−Zr（79.8：2.0：15.8：2.0：
0.4）
その他還元性元素としてはAl，Ti，Ｕ，Cr，
Nb，Thなどの一種またはそれ以上を上記のZr，
Mg，Siと共に、または代わりに使用してもよ
い。
Zrの場合は、基体金属中通常５重量％以下含ま
れ、その他の還元性元素の場合は通常基体金属中
不純物量程度含まれる。
また、高融点金属の量としては２重量％以上が
必要であり、これより少量では所望の高温強度，
電気比抵抗が得られない。
このような基体金属板上にSi，Ｂ，Ti，Zr，
Hf，Ｖ，Nb，Ta，Mo，Ｗなどの炭化物のうち
の少なくとも一種類を被着形成させ、この上に通
常の方法でオキサイド層を被着形成して酸化物陰
極を構成したものである。第１図は本発明による
電子管用酸化物陰極の一実施例を示すもので、１
は基体金属、２はオキサイド層、３は炭化物層で
ある。
この炭化物層は、例えばC2H2，C2H4などの炭
化水素ガス雰囲気中でSi，Ｂ，Ti，Zr，Hf，
Ｖ，Nb，Ta，Mo，Ｗの少なくとも一種類を電子
ビーム蒸着する、いわゆる反応性蒸着法によつて
形成することができる。そしてこの炭化物層の厚
さは層が存在すれば効果はあるが、あまり薄いと
基体金属の表面に炭化物層が斑点状に形成される
こともあるので前記表面を十分にカバーできず、
基体金属とオキサイドとの界面反応を抑制する効
果が薄い。従つて、量産性を考慮すれば50Å〜
5000Å、最も望ましいのは100〜1000Åである。
また炭化物層の厚さが5000Åをこえると、基体金
属中に含まれる還元性元素によるオキサイドの環
元作用が不活発になるように前記表面を炭化物層
が完全に覆つてしまい、カソードとしての電子放
射能が不足する。従つて炭化物層の厚さは5000Å
以下の範囲、望ましくは100〜1000Åの厚さが最
も良く、この場合は化学的に安定な炭化物層が基
体金属とオキサイドとの過激な界面反応を抑制
し、かつ基体金属中の還元性元素によるオキサイ
ドの還元作用は適度に行なわれ、安定した良好な
カソードが得られる。
また、Ｗ，Mo，Re，Taなどの高融点金属を含
む基体金属は、基体金属からオキサイド層が一般
に剥れ易いという理由で、基体金属表面にNi，
Ni−Co，Ni−Ｗ，Ni−Mo，Ni−Reなどの金属粉
を被着し、その上面にオキサイドを設けることも
行なわれるが、この場合は上記基体金属上にもし
くは金属粉を覆つて基体金属上に炭化物層を形成
すればよく、この構造のカソードでは、炭化物層
が前記金属粉が基体金属表面へ流出するのを防止
し、金属粉と界面反応生成物の反応も防止して通
常発生する金属粉の変質，変形を防止してカソー
ドの電子放射寿命を長くする効果が得られる。
次に、以上説明したことを具体例を用いて説明
する。
具体例 １
第２図は0.4wt％のZrと、27.5wt％のＷと、残
りNiの合金からなる基体金属の上面に下記の表
１で示したようにＡ，Ｂ，Ｃ，Ｄ，Ｅの五種類の
炭化物層を被着形成したものと、炭化物層なしの
ものＦとを作り、以後通常の方法により酸化物陰
極を製作し、カラーブラウン管に実装した時の陽
極最大電流の動作時間依存性を示し、縦軸は陽極
最大電流値の初期値に対する割合，横軸は陰極の
動作時間を示したものであり、表１の種類Ａ〜Ｆ
を第１図の特性Ａ〜Ｆに対応させている。この場
合、炭化物層は５×10-4TorrのC2H2雰囲気中で
Zr、Tiなどの金属を電子ビーム蒸着させる。い
わゆる反応性蒸着法によつて被着形成させたもの
である。
The present invention relates to oxide cathodes for electron tubes, particularly W, Mo,
This relates to an oxide cathode whose base metal is a Ni alloy containing high-melting point metals such as Re and Ta. Recently, in electron tubes equipped with oxide cathodes, the thickness of the base metal plate has been reduced to reduce the heat capacity of the cathode in order to shorten the time from when the power switch is turned on until electron emission occurs. The use of a so-called direct-heating cathode, which is heated by direct current heating, is being considered. In this case, the base metal needs to have greater high-temperature strength than conventional ones, and instead of the conventional base metal containing Ni and a trace amount of reducing elements, alloys containing high-melting point metals such as W, Mo, Re, and Ta are used. Used as a base metal. However, such high melting point metals have the property of being more easily oxidized than Ni. For this reason, when an oxide cathode using an alloy containing a high melting point metal as a base metal is manufactured using a normal manufacturing method, the high melting point metal oxidizes, and the high melting point metal oxide and alkaline earth metal oxide or alkaline earth metal oxide A rapid reaction occurs between the interface with the carbonate. The reaction rate and amount of reaction products of this interfacial reaction are incomparably greater than the conventional reaction between a base metal containing a small amount of reducing element in Ni and an alkaline earth metal oxide (hereinafter referred to as oxide). . When a large amount of interfacial reaction occurs between the base metal and the oxide, the contact situation between the base metal and the oxide changes significantly, and the oxide may peel off from the base metal, or the contact between the oxide and the base metal may change. If insufficient, the temperature of the oxide layer during cathode operation would drop, resulting in a decrease in the amount of electron emission from the oxide, making it completely useless as a cathode. Therefore, an object of the present invention is to provide an oxide cathode for an electron tube that eliminates the above-mentioned drawbacks, prevents interfacial reactions between the oxide and the base metal, and maintains the electron emission life over a long period of time. There is a particular thing. In order to achieve this purpose, the oxide cathode for electron tubes according to the present invention has chemically stable Si, B, Ti, Zr, Hf, V, Nb, Ta,
A carbide layer of at least one type of carbide such as Mo or W is provided to suppress the interfacial reaction between the oxide and the base metal that occurs during the manufacturing process. The oxide cathode for electron tubes according to the present invention will be explained in detail below. First, the base metal plate constituting the oxide cathode for an electron tube contains at least 2% by weight of at least one type of high-melting point metal such as W, Mo, Re, Ta, etc., as necessary.
It is formed from an alloy containing reducing elements such as Zr, Mg, and Si, and the remainder Ni. Examples of such alloys are: Ni-W-Mg (weight composition 72.4%: 27.5: 0.1) Ni-W-Mo-Mg (80.9: 2.0: 17.0: 0.1) Ni-W-Re-Mg (82.9: 2.0: 15.0: 0.1) Ni-W −Mo−Re−Mg (80.1:2.0:15.8:2.0:
0.1) Ni-W-Si (72.4:27.5:0.1) Ni-W-Mo-Si (80.9:2.0:17.0:0.1) Ni-W-Re-Si (82.9:2.0:15.0:0.1) Ni-W- Mo−Re−Si (80.1:2.0:15.8:2.0:
0.1) Ni-W-Zr (72.1:27.5:0.4) Ni-W-Mo-Zr (80.6:2.0:17.0:0.4) Ni-W-Re-Zr (82.6:2.0:15.0:0.4) Ni-W- Mo−Re−Zr (79.8:2.0:15.8:2.0:
0.4) Other reducing elements include Al, Ti, U, Cr,
One or more of Nb, Th, etc. are added to the above Zr,
May be used together with or instead of Mg and Si. In the case of Zr, it is usually contained in the base metal in an amount of 5% by weight or less, and in the case of other reducing elements, it is usually contained in the amount of impurities in the base metal. In addition, the amount of high melting point metal needs to be 2% by weight or more, and a smaller amount will not achieve the desired high temperature strength.
Electrical resistivity cannot be obtained. Si, B, Ti, Zr,
An oxide cathode is formed by depositing at least one type of carbide such as Hf, V, Nb, Ta, Mo, W, etc., and depositing an oxide layer on top of this by a conventional method. . FIG. 1 shows an embodiment of an oxide cathode for an electron tube according to the present invention.
is a base metal, 2 is an oxide layer, and 3 is a carbide layer. This carbide layer is made of Si , B, Ti , Zr , Hf ,
It can be formed by a so-called reactive deposition method in which at least one of V, Nb, Ta, Mo, and W is deposited by electron beam. The thickness of this carbide layer is effective if it exists, but if it is too thin, the carbide layer may be formed in spots on the surface of the base metal, so the surface cannot be sufficiently covered.
It is less effective in suppressing the interfacial reaction between the base metal and the oxide. Therefore, considering mass production, 50Å~
5000 Å, most preferably 100-1000 Å.
Furthermore, when the thickness of the carbide layer exceeds 5000 Å, the carbide layer completely covers the surface so that the ring element action of the oxide by the reducing element contained in the base metal becomes inactive, and the electrons as a cathode become inactive. There is a lack of radioactivity. Therefore, the thickness of the carbide layer is 5000Å
The thickness in the following range, preferably 100 to 1000 Å, is best; in this case, the chemically stable carbide layer suppresses the radical interfacial reaction between the base metal and the oxide, and The reducing action of the oxide is carried out appropriately, and a stable and good cathode can be obtained. In addition, base metals containing high-melting point metals such as W, Mo, Re, Ta, etc. generally have Ni on the surface of the base metal because the oxide layer tends to peel off from the base metal.
It is also possible to deposit metal powder such as Ni-Co, Ni-W, Ni-Mo, Ni-Re, etc. and provide oxide on the top surface. It is only necessary to form a carbide layer on the base metal, and in a cathode with this structure, the carbide layer prevents the metal powder from flowing out to the base metal surface, and also prevents the reaction between the metal powder and the interfacial reaction product. This has the effect of prolonging the electron emission life of the cathode by preventing alteration and deformation of the generated metal powder. Next, what has been explained above will be explained using a specific example. Specific example 1 Figure 2 shows A, B, C, D, E as shown in Table 1 below on the top surface of a base metal made of an alloy of 0.4wt% Zr, 27.5wt% W, and the rest Ni. One with five types of carbide layers deposited on the other, and one with no carbide layer F were made. After that, oxide cathodes were fabricated using the usual method, and the dependence of the anode maximum current on operating time when mounted on a color cathode ray tube. The vertical axis shows the ratio of the anode maximum current value to the initial value, and the horizontal axis shows the cathode operating time. Types A to F in Table 1
corresponds to the characteristics A to F in FIG. In this case, the carbide layer is formed in a C 2 H 2 atmosphere of 5 × 10 -4 Torr.
Electron beam evaporation of metals such as Zr and Ti. It is formed by a so-called reactive vapor deposition method.
【表】
第２図から明らかなように、特性Ｂ，Ｄ，Ｅで
示したものは、極めて優れた特性を有し、その中
でも特にＢ，ＥはＤよりさらに優れた特性を有す
る。
一方特性Ｃで示した炭化物層の厚さが大きなも
のは、陽極最大電流値の初期値に対する割合は劣
化が小さいが、初期値そのものが第２表に示すよ
うに不足、換言すればＣのものは電子放射能が初
期においてすでに不足であり、カソードとして実
用とならなかつた。また、特性Ｆで示した炭化物
層の厚さが小さいものは、特性Ａで示した炭化物
層が存在しないものに比べて効果はあることが認
められる。これに対し層のないものでは、動作中
の電子放射量が激しく減少する。特に特性Ｆは炭
化物層を形成しなかつたときの電子放射の劣化状
況を示したものであり、この場合は極めて大きな
劣化を示し、本願の有効性が明瞭に理解されるも
のである。[Table] As is clear from FIG. 2, the properties B, D, and E have extremely excellent properties, and among these, B and E in particular have even better properties than D. On the other hand, for those with a large carbide layer thickness shown in characteristic C, the ratio of the anode maximum current value to the initial value is small, but the initial value itself is insufficient as shown in Table 2. In other words, for C. The electron radioactivity was already insufficient in the early stage, so it could not be used as a practical cathode. Moreover, it is recognized that the one in which the thickness of the carbide layer shown in characteristic F is small is more effective than the one in which there is no carbide layer shown in characteristic A. On the other hand, those without layers drastically reduce the amount of electron emission during operation. In particular, characteristic F shows the state of deterioration of electron emission when no carbide layer is formed, and in this case, the deterioration is extremely large, and the effectiveness of the present application can be clearly understood.
【表】
具体例 ２
第３図は表３にＧ，Ｈ，Ｉ，Ｊに示す四種類の
基体金属に厚さ200〜600ÅのZrCの炭化物層を被
着形成したときの特性Ｉと、炭化物層を全く形成
しなかつたときの特性についての基体金属組成
の影響を示した特性図である。[Table] Specific example 2 Figure 3 shows the characteristics I and carbide when a ZrC carbide layer with a thickness of 200 to 600 Å is deposited on the four types of base metals shown in Table 3 as G, H, I, and J. FIG. 3 is a characteristic diagram showing the influence of the base metal composition on the characteristics when no layer is formed.
【表】
この場合、炭化物層の作り方，カソード，カラ
ーブラウン管の作り方などは全て具体例１に準じ
た。
この第３図から明らかなように基体金属の組成
が大幅に変つても特性で示したように本願の適
当な厚さの炭化物層を有するものは使用中の電子
放射量の劣化は極めて少ない。
また特性で示したように炭化物層を有しない
カソードは基体金属の影響も大きくなり、またカ
ソード使用中の電子放射量の劣化が大きくなる。
したがつて、このように本願の炭化物層は高融点
金属を含む基体金属を用いた酸化物陰極では、基
体金属の組成が多少変動しても極めて大きな効果
が得られる。
また、上記実施例においては、炭化物層の形成
を炭化水素ガス雰囲気中での反応性蒸着法を用い
た場合について説明したが、炭化水素ガス中で金
属ターゲツトをスパツタする反応性スパツタリン
グ、あるいは炭化物ターゲツトを用いる通常のス
パツタリング、またはZrCl4，TiCl4などのハロゲ
ン化物ガスと炭化水素ガス，水素ガスとの混合ガ
スを熱した基材に供給して炭化物被膜を得る
CVD法などの他の方法で形成してもよい。
また第１図では炭化物層をオキサイド層の被着
面及びその付近にのみ設けたが、作業性を考慮す
ればもつと広範囲に設けてもよい。また、前述の
例では炭化物層は一種類のみを基体金属板表面に
被着することについて述べたが、これは組合せで
もよい。
以上説明したように、本発明による電子管用酸
化物陰極によれば、酸化物陰極の使用中における
電子放射能の劣化を防止して、長期間にわたつて
電子放射量を維持させ、電子管の品質，信頼性等
を大幅に向上させることができる極めて優れた効
果が得られる。[Table] In this case, the method for making the carbide layer, the cathode, the color cathode ray tube, etc. were all in accordance with Example 1. As is clear from FIG. 3, even if the composition of the base metal changes significantly, as shown in the characteristics, the product having a carbide layer of an appropriate thickness according to the present invention shows extremely little deterioration in the amount of electron emission during use. Furthermore, as shown in the characteristics, a cathode without a carbide layer is greatly influenced by the base metal, and the amount of electron radiation is significantly degraded during use of the cathode.
Therefore, in the case of an oxide cathode in which the carbide layer of the present application uses a base metal containing a high-melting point metal, an extremely large effect can be obtained even if the composition of the base metal varies to some extent. Furthermore, in the above embodiments, the carbide layer was formed by reactive vapor deposition in a hydrocarbon gas atmosphere, but reactive sputtering, which sputters a metal target in a hydrocarbon gas, or a carbide target A carbide film is obtained by normal sputtering using a chloride gas, or by supplying a mixed gas of a halide gas such as ZrCl 4 or TiCl 4 and a hydrocarbon gas or hydrogen gas to a heated substrate.
It may be formed by other methods such as CVD method. Further, in FIG. 1, the carbide layer is provided only on the surface to which the oxide layer is adhered and its vicinity, but it may be provided over a wider area if workability is taken into consideration. Further, in the above example, only one type of carbide layer is deposited on the surface of the base metal plate, but a combination may be used. As explained above, the oxide cathode for electron tubes according to the present invention prevents deterioration of electron radioactivity during use of the oxide cathode, maintains the amount of electron radiation over a long period of time, and improves the quality of the electron tube. , an extremely excellent effect can be obtained that can significantly improve reliability, etc.
第１図は本発明の電子管用酸化物陰極の一実施
例を示す側面図、第２図および第３図は本発明に
よる電子管用酸化物陰極の陽極最大電流の動作時
間依存性を示す特性図である。
１……基体金属、２……オキサイド層、３……
炭化物層。
FIG. 1 is a side view showing one embodiment of an oxide cathode for an electron tube according to the present invention, and FIGS. 2 and 3 are characteristic diagrams showing the operation time dependence of the anode maximum current of the oxide cathode for an electron tube according to the present invention. It is. 1... Base metal, 2... Oxide layer, 3...
carbide layer.
Claims (1)
の高融点金属を２重量％以上含む合金からなる基
体金属板と、この基体金属板に被着形成された電
子放射性アルカリ土類金属酸化物層とを有する電
子管用酸化物陰極において、前記基体金属板の前
記電子放射性アルカリ土類金属酸化物を被着する
下地面にSi，Ｂ，Ti，Zr，Hf，Ｖ，Nb，Ta，
Mo，Ｗの炭化物のうちの少なくとも一種類の炭
化物層を被着形成してなることを特徴とする電子
管用酸化物陰極。 ２ 前記基体金属板はZr，Al，Mg，Si，Ti，
Ｕ，Cr，Nb，Thなどの還元性元素の少なくとも
一種類を含むことを特徴とする特許請求の範囲第
１項記載の電子管用酸化物陰極。 ３ 前記炭化物層の膜厚を50〜5000Åとしたこと
を特徴とする前記特許請求の範囲第１項記載の電
子管用酸化物陰極。 ４ 前記炭化物層の膜厚を100〜1000Åとしたこ
とを特徴とする前記特許請求の範囲第１項記載の
電子管用酸化物陰極。[Scope of Claims] 1. A base metal plate made of an alloy containing Ni as a main component and at least 2% by weight of at least one type of high-melting point metal, and an electron-emitting alkaline earth deposited on the base metal plate. In the oxide cathode for an electron tube having a metal oxide layer, Si, B, Ti, Zr, Hf, V, Nb, Ta,
An oxide cathode for an electron tube, comprising a carbide layer of at least one of Mo and W carbides. 2 The base metal plate is made of Zr, Al, Mg, Si, Ti,
The oxide cathode for an electron tube according to claim 1, characterized in that it contains at least one type of reducing element such as U, Cr, Nb, and Th. 3. The oxide cathode for an electron tube according to claim 1, wherein the carbide layer has a thickness of 50 to 5000 Å. 4. The oxide cathode for an electron tube according to claim 1, wherein the carbide layer has a thickness of 100 to 1000 Å.
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13990378A JPS5566819A (en) | 1978-11-15 | 1978-11-15 | Oxide cathode for electron tube |
| US06/091,840 US4313854A (en) | 1978-11-15 | 1979-11-06 | Oxide-coated cathode for electron tube |
| GB7938665A GB2041637B (en) | 1978-11-15 | 1979-11-08 | Oxide-coated cathode for electron tube |
| FI793550A FI793550A (en) | 1978-11-15 | 1979-11-13 | KATOD MED OXIDBELAEGGNING FOER ELEKTRONROER |
| NL7908305A NL7908305A (en) | 1978-11-15 | 1979-11-13 | OXIDE-COATED CATHOD FOR ELECTRON TUBE. |
| DE2945995A DE2945995C2 (en) | 1978-11-15 | 1979-11-14 | Oxide-coated cathode for electron tubes |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13990378A JPS5566819A (en) | 1978-11-15 | 1978-11-15 | Oxide cathode for electron tube |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5566819A JPS5566819A (en) | 1980-05-20 |
| JPS6148207B2 true JPS6148207B2 (en) | 1986-10-23 |
Family
ID=15256300
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13990378A Granted JPS5566819A (en) | 1978-11-15 | 1978-11-15 | Oxide cathode for electron tube |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4313854A (en) |
| JP (1) | JPS5566819A (en) |
| DE (1) | DE2945995C2 (en) |
| FI (1) | FI793550A (en) |
| GB (1) | GB2041637B (en) |
| NL (1) | NL7908305A (en) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5641636A (en) * | 1979-09-12 | 1981-04-18 | Hitachi Ltd | Directly heated type oxide cathode |
| GB2059676B (en) * | 1979-09-12 | 1983-07-20 | Hitachi Ltd | Oxide-coated cathodes |
| NL8100928A (en) * | 1981-02-26 | 1982-09-16 | Philips Nv | OXYD CATHODE. |
| JPS59164156A (en) * | 1983-03-09 | 1984-09-17 | Oki Electric Ind Co Ltd | Thermal head |
| DE3323473A1 (en) * | 1983-06-29 | 1985-01-03 | Siemens AG, 1000 Berlin und 8000 München | QUICK HEATING CATHODE |
| DE3329106A1 (en) * | 1983-08-11 | 1985-02-21 | Siemens AG, 1000 Berlin und 8000 München | GAS DISCHARGE DISPLAY DEVICE WITH A RE-ACCELERATION RANGE |
| US4617492A (en) * | 1985-02-04 | 1986-10-14 | General Electric Company | High pressure sodium lamp having improved pressure stability |
| JP2607654B2 (en) * | 1988-12-16 | 1997-05-07 | 株式会社東芝 | Indirectly heated cathode structure and electron gun structure using the same |
| JP2758244B2 (en) * | 1990-03-07 | 1998-05-28 | 三菱電機株式会社 | Cathode for electron tube |
| DE4026300A1 (en) * | 1990-08-20 | 1992-02-27 | Siemens Ag | Electron emitter for X=ray tube - is of material contg. rare earth element covering support layer of large flat surface withstanding vibration |
| DE4207220A1 (en) * | 1992-03-07 | 1993-09-09 | Philips Patentverwaltung | SOLID ELEMENT FOR A THERMIONIC CATHODE |
| JPH0850849A (en) * | 1994-05-31 | 1996-02-20 | Nec Kansai Ltd | Cathode member and electronic tube using it |
| JPH08222119A (en) * | 1994-12-07 | 1996-08-30 | Samsung Display Devices Co Ltd | Direct heated cathode structure |
| KR100195167B1 (en) * | 1994-12-29 | 1999-06-15 | 손욱 | Cathode heated directly and the manufacturing method thereof |
| FR2810446A1 (en) * | 2000-06-14 | 2001-12-21 | Thomson Tubes & Displays | Improved oxide coated cathode incorporating electrical conducting grains acting as conducting bridges between the metal support and the oxide layer through the interface layer formed between them |
| CA2663438C (en) * | 2006-10-02 | 2013-08-06 | Shoei Chemical Inc. | Nickel-rhenium alloy powder and conductor paste containing the same |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE515833A (en) * | 1951-11-29 | |||
| BE525821A (en) * | 1953-01-19 | |||
| US3170772A (en) * | 1961-01-05 | 1965-02-23 | Tokyo Shibaura Electric Co | Oxide coated cathodes for electron tubes |
| US3500106A (en) * | 1965-09-10 | 1970-03-10 | Bell & Howell Co | Cathode |
| US3842309A (en) * | 1970-11-12 | 1974-10-15 | Philips Corp | Method of manufacturing a storage cathode and cathode manufactured by said method |
| JPS4822295B1 (en) * | 1970-12-04 | 1973-07-05 | ||
| US3719856A (en) * | 1971-05-19 | 1973-03-06 | O Koppius | Impregnants for dispenser cathodes |
| US3879830A (en) * | 1971-06-30 | 1975-04-29 | Gte Sylvania Inc | Cathode for electron discharge device having highly adherent emissive coating of nickel and nickel coated carbonates |
| US4081713A (en) * | 1976-01-28 | 1978-03-28 | Hitachi, Ltd. | Directly heated oxide cathode |
| GB1582837A (en) * | 1976-07-10 | 1981-01-14 | Emi Varian Ltd | Electron emitter |
| JPS5339054A (en) * | 1976-09-22 | 1978-04-10 | Hitachi Ltd | Basement metal plate material for direct heated oxide cathode |
| US4101800A (en) * | 1977-07-06 | 1978-07-18 | The United States Of America As Represented By The Secretary Of The Navy | Controlled-porosity dispenser cathode |
-
1978
- 1978-11-15 JP JP13990378A patent/JPS5566819A/en active Granted
-
1979
- 1979-11-06 US US06/091,840 patent/US4313854A/en not_active Expired - Lifetime
- 1979-11-08 GB GB7938665A patent/GB2041637B/en not_active Expired
- 1979-11-13 FI FI793550A patent/FI793550A/en not_active Application Discontinuation
- 1979-11-13 NL NL7908305A patent/NL7908305A/en not_active Application Discontinuation
- 1979-11-14 DE DE2945995A patent/DE2945995C2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FI793550A (en) | 1980-05-16 |
| GB2041637A (en) | 1980-09-10 |
| NL7908305A (en) | 1980-05-19 |
| GB2041637B (en) | 1983-02-09 |
| DE2945995C2 (en) | 1982-03-25 |
| JPS5566819A (en) | 1980-05-20 |
| DE2945995A1 (en) | 1980-05-22 |
| US4313854A (en) | 1982-02-02 |
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