JPS601882A - Semiconductor optical integrated circuit - Google Patents
Semiconductor optical integrated circuitInfo
- Publication number
- JPS601882A JPS601882A JP58109975A JP10997583A JPS601882A JP S601882 A JPS601882 A JP S601882A JP 58109975 A JP58109975 A JP 58109975A JP 10997583 A JP10997583 A JP 10997583A JP S601882 A JPS601882 A JP S601882A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- optical integrated
- integrated circuit
- semiconductor optical
- fet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Semiconductor Lasers (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】 〔技術分野〕 本発明は半導体光集積回路に関するものである。[Detailed description of the invention] 〔Technical field〕 The present invention relates to semiconductor optical integrated circuits.
従来より汎く用いられている光増幅回路を第１図に示す
。第１図の回路は発光素子、受光素子、１４Ｔ等の個々
の素子より構成されている。そのため素子全体のザイズ
は大きく、重１１１：も重い。実用上軽量コンパクト化
が望まれ、これを実現するには集積化が必要である。FIG. 1 shows an optical amplification circuit that has been widely used in the past. The circuit shown in FIG. 1 is composed of individual elements such as a light emitting element, a light receiving element, and a 14T. Therefore, the size of the entire element is large and the weight is 111: heavy. In practice, it is desirable to make the device lightweight and compact, and to achieve this, integration is necessary.
本発明は、上記の課題を解決する半導体光集積回路の４
１４造を提供するものであり、光増幅機能をそなえた光
集積回路である。The present invention provides four semiconductor optical integrated circuits that solve the above problems.
It is an optical integrated circuit equipped with an optical amplification function.
本発明は、同一半導体基板」−に１個の発光素子と２個
のＦＥＴを形成し、上記ＦＥＴＱ内第１０ＦＥＴは所定
の電流を発光素子に流すドライバーとして用い、この第
１０Ｆ’ＥＴと並列接続にある第２のＦＥＴを受光器か
つ増幅器とした構造を有する光集積回路である。In the present invention, one light emitting element and two FETs are formed on the same semiconductor substrate, and the 10th FET in the FETQ is used as a driver to flow a predetermined current to the light emitting element, and is connected in parallel with the 10th F'ET. This is an optical integrated circuit having a structure in which the second FET in the second FET serves as both a light receiver and an amplifier.
以下本発明を図面に基づいて説明する。The present invention will be explained below based on the drawings.
第２図は本発明の光集積素子の構造を示丈。Figure 2 shows the structure of the optical integrated device of the present invention.
まず１ｎＰ半絶縁基板ｌ」二にｐ−ＩｎＰクラッド層２
、ｐ−ＩｎＧａＡｓＰ活性層３、ｎ−１ｎＰクラッド層
１、からなる半導体レーザを形成し、その上にＩ ｎＧ
ａＡｓ 動作層５、ｐ−ＩｎＰ ）’ｈ ”を有し、ソ
ースＳ＋７＋ゲートＧ１９、ドレインＤ＋１２ からな
る第１の接合型ＦＥＴを形成し、そしてソース５２１０
．ゲー）Ｇｇ、１１． ドレインＤ２１３からなる第２
の接合型ＦＥＴを形成する。Firstly, a 1nP semi-insulating substrate 1” and secondly a p-InP cladding layer 2.
, a p-InGaAsP active layer 3, and an n-1nP cladding layer 1.
aAs active layer 5, p-InP)'h'', forming a first junction FET consisting of source S+7+gate G19, drain D+12, and source 5210
．． Game) Gg, 11. The second consisting of drain D213
A junction type FET is formed.
第１の接合型ＦＥＴは半導体レーザに所定の電流を流す
ドライバーであり、所定の電流例えばレーザ発振しきい
値電流量が得られるようにゲー１−Ｇｘ９に電圧を印加
しておく。他方第２の接合型ＦＥＴにはゲー）Ｇ２１．
１に適当な電圧例えば電流がピンチオフされる電圧を印
加しておき、ゲー）Ｇｇｌｌ近くに外部から光信号を入
射することによりゲー）Ｇ２１１下のＮ−１ｎＧａＡｓ
動作層５内空乏層が変調々
を聯１１、第２の接合型ＦＥＴに光信号により増ｒｌＪ
された電流が流れるようにする。その結果半導体レーザ
にレーザ発振しきい値電流以上の電流が流れれても良い
。The first junction FET is a driver that allows a predetermined current to flow through the semiconductor laser, and a voltage is applied to G1-Gx9 so that a predetermined current, for example, a laser oscillation threshold current amount is obtained. On the other hand, the second junction FET has G21.
By applying an appropriate voltage, for example, a voltage at which the current is pinched off, to G1, and inputting an optical signal from the outside near Ggll, the N-1nGaAs under G211 is applied.
The depletion layer in the active layer 5 is modulated and increased rlJ by an optical signal to the second junction FET.
Allow the current to flow. As a result, a current higher than the laser oscillation threshold current may flow through the semiconductor laser.
以上の本発明の説明においては、説明上接合型ＦＥＴを
用いたが、シコトキー型ＦＥＴでも同様の効果が得られ
、この場合ｐ−ＩｎＰｆｆ４８を除去した構造となる。In the above description of the present invention, a junction type FET is used for the sake of explanation, but a similar effect can be obtained with a Shokotoky type FET, and in this case, the structure is such that the p-InPff48 is removed.
又発光素子として、半導体レーゾ“を用いたが、発光ダ
イオードの場合も同様であり、レーザ発振しきい値電流
以下て使用すれば発光ダイオードになる。Although a semiconductor laser was used as a light emitting element, the same applies to a light emitting diode, and if used below the laser oscillation threshold current, it becomes a light emitting diode.
以上述べた如く、本発明に従えば、同−半絶縁性半導体
基板上に１個の発光素子と２個のＦＥＴを形成し、その
内１個のＦＥＴに受光器かつ増幅器の機能を持たせるこ
とにより、光増幅機能をそなえた光集積回路であり、光
増幅器の軽Ｉｉ）、コンバクＩ・化を実現させることが
可能である。As described above, according to the present invention, one light emitting element and two FETs are formed on the same semi-insulating semiconductor substrate, and one of the FETs has the functions of a light receiver and an amplifier. As a result, it is an optical integrated circuit equipped with an optical amplification function, and it is possible to realize optical amplifiers such as optical amplifiers.
又この構造は他の半導体材料であるＧａ ｌ −Ｘ Ａ
ｊ’ｘＡｓ系、Ｉｎ１−ｘＧａ）（Ａｓｈ−ｙＳｂｙ系
、Ｇａ１−ｘ／ＶｘＡｓ＋ −ｙ Ｓｂｙ系等にも適用
でき容易に類推可能である。１This structure can also be applied to other semiconductor materials such as Gal-XA
It can also be applied to the j'xAs system, In1-xGa) (Ash-ySby system, Ga1-x/VxAs+ -y Sby system, etc., and can be easily analogized.1
第１図は従来の光増ｒｌｊ回路を示す図であり、第２図
は本発明の光集積素子構造を示す図である。
図中、
１・・・ＩｎＰ半絶縁基板
２・・・ｐ−ＩｎＰクラッド層
３ ・・・ｐ−ＩｎＧａＡｓＰ活性層
４ ・・・ｎ−ＩｎＧａＡｓＰクラッド層５− ｎ−Ｉ
ｎＧａＡｓ 動作層
６・・・ｐ側ＡｕＺｎ 電極
７・・・ソース電極（Ｓｌ）
８・・・ｐ−ＩｎＰ層
９・・・ゲート電極（Ｇｌ）
１０・・・ソース電極（Ｓ２）
１１・・・ゲート電極（Ｇ２）
１２ ・・・ ドレイン電極（Ｄｌ）
１３ ・・・ ドレイン電極（Ｄ２）
第１回
第２図FIG. 1 is a diagram showing a conventional optical multiplication rlj circuit, and FIG. 2 is a diagram showing the optical integrated device structure of the present invention. In the figure, 1...InP semi-insulating substrate 2...p-InP cladding layer 3...p-InGaAsP active layer 4...n-InGaAsP cladding layer 5-n-I
nGaAs operating layer 6... p-side AuZn electrode 7... source electrode (Sl) 8... p-InP layer 9... gate electrode (Gl) 10... source electrode (S2) 11... Gate electrode (G2) 12... Drain electrode (Dl) 13... Drain electrode (D2) 1st Part 2 Figure
Claims (1)
個の電界効果型トランジスク（ＦＥＴ ）を形成し、 （ｂ）第］のＦＥＴは所定の電流を発光素子に流すドラ
イバーとして用い、 （ｃ）第２のＦＥＴは、その動作層のバンドギャップエ
ネルギーを受光の光子エネルギーよりも小さく取ること
により、受光器かつ増ｒｌｊ器として用い、（ｄ）前記
第１、第２０ＦＥＴは互いに並列に接続し、発光素子に
対し直列に接２続した構造を有するようにしたことを特
徴とする半導体光集積回路。(1) In a semiconductor optical integrated circuit, (a) one light emitting element and two light emitting elements are placed on the same semi-insulating semiconductor substrate.
(b) The second FET is used as a driver to flow a predetermined current to the light emitting element, and (c) the second FET is used to control the bandgap energy of the active layer. By taking the photon energy smaller than the photon energy of the received light, it can be used as a light receiver and a multiplier, and (d) the first and 20th FETs are connected in parallel to each other and have a structure in which they are connected in series to the light emitting element. A semiconductor optical integrated circuit characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58109975A JPS601882A (en) | 1983-06-17 | 1983-06-17 | Semiconductor optical integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58109975A JPS601882A (en) | 1983-06-17 | 1983-06-17 | Semiconductor optical integrated circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS601882A true JPS601882A (en) | 1985-01-08 |
Family
ID=14523894
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58109975A Pending JPS601882A (en) | 1983-06-17 | 1983-06-17 | Semiconductor optical integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS601882A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5422900A (en) * | 1994-04-28 | 1995-06-06 | Eastman Kodak Company | Integrated laser module |
-
1983
- 1983-06-17 JP JP58109975A patent/JPS601882A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5422900A (en) * | 1994-04-28 | 1995-06-06 | Eastman Kodak Company | Integrated laser module |
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