JPS60187084A - 埋め込み構造半導体レ−ザ - Google Patents

埋め込み構造半導体レ−ザ

Info

Publication number
JPS60187084A
JPS60187084A JP4365684A JP4365684A JPS60187084A JP S60187084 A JPS60187084 A JP S60187084A JP 4365684 A JP4365684 A JP 4365684A JP 4365684 A JP4365684 A JP 4365684A JP S60187084 A JPS60187084 A JP S60187084A
Authority
JP
Japan
Prior art keywords
refractive index
layer
mesa
semiconductor
activation layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4365684A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0552678B2 (enExample
Inventor
Kenichi Kobayashi
健一 小林
Toru Suzuki
徹 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4365684A priority Critical patent/JPS60187084A/ja
Publication of JPS60187084A publication Critical patent/JPS60187084A/ja
Publication of JPH0552678B2 publication Critical patent/JPH0552678B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Semiconductor Lasers (AREA)
JP4365684A 1984-03-07 1984-03-07 埋め込み構造半導体レ−ザ Granted JPS60187084A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4365684A JPS60187084A (ja) 1984-03-07 1984-03-07 埋め込み構造半導体レ−ザ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4365684A JPS60187084A (ja) 1984-03-07 1984-03-07 埋め込み構造半導体レ−ザ

Publications (2)

Publication Number Publication Date
JPS60187084A true JPS60187084A (ja) 1985-09-24
JPH0552678B2 JPH0552678B2 (enExample) 1993-08-06

Family

ID=12669901

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4365684A Granted JPS60187084A (ja) 1984-03-07 1984-03-07 埋め込み構造半導体レ−ザ

Country Status (1)

Country Link
JP (1) JPS60187084A (enExample)

Also Published As

Publication number Publication date
JPH0552678B2 (enExample) 1993-08-06

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