JPS60187070A - Semiconductor light emitting device - Google Patents
Semiconductor light emitting deviceInfo
- Publication number
- JPS60187070A JPS60187070A JP59042757A JP4275784A JPS60187070A JP S60187070 A JPS60187070 A JP S60187070A JP 59042757 A JP59042757 A JP 59042757A JP 4275784 A JP4275784 A JP 4275784A JP S60187070 A JPS60187070 A JP S60187070A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- elements
- emitting diode
- substrate
- diode array
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 10
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 239000012790 adhesive layer Substances 0.000 claims description 15
- 230000002265 prevention Effects 0.000 claims description 2
- 230000000630 rising effect Effects 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 2
- 235000011837 pasties Nutrition 0.000 abstract 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83385—Shape, e.g. interlocking features
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10158—Shape being other than a cuboid at the passive surface
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/303—Surface mounted components, e.g. affixing before soldering, aligning means, spacing means
Abstract
Description
【発明の詳細な説明】
［発明の技術分野］
本発明は半導体発光装置に係り、特に複写機等の光源と
して使用される発光ダイオードアレイ素子を用いた半導
体発光装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a semiconductor light emitting device, and more particularly to a semiconductor light emitting device using a light emitting diode array element used as a light source in a copying machine or the like.
［発明の技術的背景］
一般に、ＬＥＤ光源を用いた複写機では、−個の基板上
にプリント印字原稿の長さに応じて複数個の発光ダイオ
ードアレイ素子を配り」シて０る。[Technical Background of the Invention] Generally, in a copying machine using an LED light source, a plurality of light emitting diode array elements are distributed on a plurality of substrates according to the length of a printed document.
第１図は従来の発光ダイオードアレイ素子を用５）だ発
光装置の構造を示す平面図、第２図【ま第１図のＡ−Ｂ
線に沿った断面図である。第１図及び第２図において、
１１は素子マウント用のプリント基板である。このプリ
ント基板１１はセラミック基板上に金めつきを施し導電
回路を形成したものである。このプリント基板１１は、
支持基板１２上に固定支持されている。このプリント基
板１１の表面中央部には素子配列用の満１３が設けられ
ている。この溝１３には、複数の発光ダイオードアレイ
素子１４゜１５、１６がそれぞれ導電性接着層１７によ
り接着固定されている。上記発光ダイオードアレイ素子
１４゜１５、１６は、例えば閉管拡散法によりガリウム
ヒ素基板に亜鉛を拡散させて所望の深さのＰ−Ｎ接合を
形成し、さらに複数の電極１８を形成した後長方形状に
分割したものである。なお、１９は電極取出し用の端子
である。Figure 1 is a plan view showing the structure of a light emitting device using a conventional light emitting diode array element, and Figure 2 is a plan view showing the structure of a light emitting device using a conventional light emitting diode array element.
It is a sectional view along the line. In Figures 1 and 2,
11 is a printed circuit board for mounting elements. This printed circuit board 11 is a ceramic substrate plated with gold to form a conductive circuit. This printed circuit board 11 is
It is fixedly supported on a support substrate 12. At the center of the surface of this printed circuit board 11, a pad 13 for arranging elements is provided. A plurality of light emitting diode array elements 14, 15 and 16 are adhesively fixed to the groove 13 by conductive adhesive layers 17, respectively. The light emitting diode array elements 14, 15, 16 are manufactured by diffusing zinc into a gallium arsenide substrate by, for example, a closed tube diffusion method to form a P-N junction of a desired depth, and then forming a plurality of electrodes 18, and then forming a rectangular shape. It is divided into. Note that 19 is a terminal for taking out the electrode.
［背景技術の問題点コ
前述のように、発光ダイオードアレイ素子１４゜１５、
１６は導電性接着層１７によりプリント基板１１上に固
定される。[Problems with the Background Art] As mentioned above, the light emitting diode array elements 14, 15,
16 is fixed onto the printed circuit board 11 by a conductive adhesive layer 17.
しかしながら、この導電性接着層１１は発光ダイオード
アレイ素子１４．１５．１６を固定する際にはペースト
状態であるので、上記のような従来の構造では、このペ
ーストが発光ダイオードアレイ素子１４、１５．１６相
互間の隙間、及びこれらと溝１３の側壁との間の隙間を
這上がり、第２図に示したように表面の電極１８部まで
達する事態が生じてしまう。However, since this conductive adhesive layer 11 is in a paste state when fixing the light emitting diode array elements 14, 15, 16, in the conventional structure as described above, this paste is used to fix the light emitting diode array elements 14, 15, . 16 and the gap between these and the side wall of the groove 13, and as shown in FIG.
その結果、発光ダイオードアレイ素子１４．１５．１６
の発光効率が局部的に低下し、全体の発光効率が不均一
になり、さらにはボンディング作業にも悪影響を与えて
いた。このため、複写機の印字品質が低下すると共に高
速プリンタ化の障害となっていた。As a result, the light emitting diode array element 14.15.16
The luminous efficiency of the device decreases locally, the overall luminous efficiency becomes uneven, and the bonding work is also adversely affected. For this reason, the printing quality of the copying machine deteriorates and becomes an obstacle to high-speed printers.
［発明の目的］
本発明は上記の点に鑑みてなされたもので、その目的は
、導電性接着層の発光素子表面への這上がりを防止する
ことができ、発光効率が向上し、複写機等の光源として
用いることにより、印字品質が向上すると共に高速プリ
ンタ化を実現し得る半導体発光装置を提供することにあ
る。[Object of the Invention] The present invention has been made in view of the above points, and its purpose is to prevent the conductive adhesive layer from creeping up on the surface of the light emitting element, improve the luminous efficiency, and improve the image quality of the copying machine. It is an object of the present invention to provide a semiconductor light emitting device that can be used as a light source to improve print quality and realize high-speed printers.
［発明の概要］
本発明は、発光素子が配列される配列部が設けられた基
板の当該配列部に例えば半円状の溝を複数個形成し、若
しくは発光ダイオードアレイ素子の下面側に切り欠き部
を設け、発光ダイオードアレイ素子を導電性接着ペース
トにより固定する際に゛、当該ペーストが上記溝若しく
は切り欠き部に捕集される構造として、発光ダイオード
アレイ素子の表面部への這上がりを防止するものである
。[Summary of the Invention] The present invention provides for forming, for example, a plurality of semicircular grooves in the arrangement part of a substrate provided with the arrangement part in which light emitting elements are arranged, or notches on the lower surface side of the light emitting diode array element. When the light emitting diode array element is fixed with a conductive adhesive paste, the paste is collected in the groove or notch to prevent it from creeping up to the surface of the light emitting diode array element. It is something to do.
［発明の実施例］
以下、図面を参照して本発明の一実施例を説明する。第
３図は本発明に係る半導体発光装置の構造を示す平面図
、第４図は第３図のＣ−ＤＩに沿った断面図である。第
３図及び第４図において、２１は素子マウント用のプリ
ント基板である。このプリント基板２１は、セラミック
基板上に金めつきを施し導電回路を形成したものである
。このプリント基板２１は、支持基板２２上に固定支持
されている。このプリント基板２１の表面中央部には素
子配列用の溝２３が設けられている。この溝２３には、
さらにその底部に複数の小さな半円状の溝２４が設けら
れている。これら溝２４は、それぞれ後述の発光ダイオ
ードアレイ素子２５．２６．２７間の隙間、及び発光ダ
イオードアレイ素子２５．２７と上記溝２３の側壁との
隙間に対向して設けられている。溝２３には、複数の発
光ダイオードアレイ素子２５．２６．２７がそれぞれ導
電性接着層２８により接着固定されている。[Embodiment of the Invention] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. 3 is a plan view showing the structure of a semiconductor light emitting device according to the present invention, and FIG. 4 is a sectional view taken along line C-DI in FIG. 3. In FIGS. 3 and 4, 21 is a printed circuit board for mounting the device. This printed circuit board 21 is a ceramic substrate plated with gold to form a conductive circuit. This printed circuit board 21 is fixedly supported on a support substrate 22. A groove 23 for arranging elements is provided in the center of the surface of this printed circuit board 21. In this groove 23,
Further, a plurality of small semicircular grooves 24 are provided at the bottom thereof. These grooves 24 are provided to face gaps between light emitting diode array elements 25, 26, and 27, which will be described later, and gaps between light emitting diode array elements 25, 27 and the side walls of the grooves 23, respectively. A plurality of light emitting diode array elements 25, 26, and 27 are each adhesively fixed in the groove 23 by a conductive adhesive layer 28.
上記発光ダイオードアレイ素子２５．２Ｇ、 ２７は、
例えば閉管拡散法によりガリウムヒ素基板により亜鉛を
拡散させて所望の深さのＰ−Ｎ接合を形成し、さらに複
数の電極２９を形成した後長方形状に分割したものであ
る。なお、３０は電極取出し用の端子である。The light emitting diode array elements 25.2G and 27 are
For example, zinc is diffused through a gallium arsenide substrate using a closed tube diffusion method to form a P-N junction of a desired depth, and after a plurality of electrodes 29 are formed, the substrate is divided into rectangular shapes. Note that 30 is a terminal for taking out the electrode.
すなわち、本発明の半導体発光装置においては、プリン
ト基板２１の満２３の底部に、さらに複数の溝２４を設
けたものである。従って、発光ダイオードアレイ素子２
５．２Ｇ、 ２７を固定する際に、ペースト状態の導電
性接着層２８の当該発光ダイオードアレイ素子２５．２
６．２７の接着に寄与しない部分は溝２４内に流れ込み
、その結果、この導電性接着層２８の発光ダイオードア
レイ素子２５．２６．２７の表面電極２９部への道上が
りが阻止される。That is, in the semiconductor light emitting device of the present invention, a plurality of grooves 24 are further provided at the bottom of the printed circuit board 21 . Therefore, the light emitting diode array element 2
5.2G, when fixing 27, the light emitting diode array element 25.2 of the conductive adhesive layer 28 in a paste state
A portion of the conductive adhesive layer 6.27 that does not contribute to adhesion flows into the groove 24, and as a result, this conductive adhesive layer 28 is prevented from reaching the surface electrode 29 portion of the light emitting diode array element 25, 26, 27.
上記実施例においては、プリント基板２１側に導電性接
着層２８の這上がりを防止するための１！２４を設ける
ようにしたが、第５図に示すように、発光ダイオードア
レイ素子２５．２６．２７側に設けるようにしてもよい
。すなわち、発光ダイオードアレイ素子２５．２６．２
７の各底面部（Ｎ層側）の両端部にそれぞれ第６図に拡
大して示すように段状の切り欠き部３１を設けるもので
ある。この場合も上記実施例と同様な効果が得られるも
のである。In the above embodiment, 1!24 were provided on the printed circuit board 21 side to prevent the conductive adhesive layer 28 from creeping up, but as shown in FIG. It may be provided on the 27 side. That is, the light emitting diode array element 25.26.2
Step-shaped notches 31 are provided at both ends of each bottom surface portion (N layer side) of 7, as shown in an enlarged view in FIG. In this case as well, the same effects as in the above embodiment can be obtained.
尚、上記第１の実施例において、溝２４の形状を半円状
としたが、これに限定するものではなく、例えば角状等
でもよく、その形状は任意でありさらにその位置につい
ても任意である。また、上記実施例においては、導電性
接着層２８の這上がり防止部をプリント基板２１及び発
光ダイオードアレイ素子２５．２６．２７のいずれか一
方に設けるようにしたが、双方に設けるようにしてもよ
いことは勿論である。さらに、上記実施例においては、
発光ダイオードアレイ素子２５．２６．２７をそれぞれ
溝２３の中に配列する構造としたが、溝２３を設けるこ
となくプリント基板２１の表面に直接配列する構造のも
のであっても良い。In the first embodiment, the shape of the groove 24 is semicircular, but it is not limited to this, and may be, for example, angular. be. Further, in the above embodiment, the creep-up prevention portion of the conductive adhesive layer 28 is provided on either the printed circuit board 21 or the light emitting diode array element 25, 26, or 27, but it may be provided on both. Of course it's a good thing. Furthermore, in the above embodiment,
Although the light emitting diode array elements 25, 26, and 27 are arranged in the grooves 23, they may be arranged directly on the surface of the printed circuit board 21 without providing the grooves 23.
［発明の効果］
以上のように本発明によれば、導電性接着層の発光ダイ
オードアレイ素子表面への這い上がりを防止することが
できるので、後工程のボンディング作業に悪影響を及ぼ
すことがなくなると共に発光効率が向上し、複写機等の
光源として用いることにより、印字品質が向上すると共
に、高速プリンタ化を実現することが可能となる。[Effects of the Invention] As described above, according to the present invention, it is possible to prevent the conductive adhesive layer from creeping up to the surface of the light emitting diode array element, so that there is no adverse effect on the bonding work in the subsequent process. The luminous efficiency is improved, and by using it as a light source for copying machines, etc., it becomes possible to improve printing quality and realize high-speed printers.
第１図は従来の半導体発光装置の構造を示す平面図、第
２図は同断面図、第３図は本発明の一実施例に係る半導
体発光装置の構造を示す平面図、第４図は同断面図、第
５図は本発明の他の実施例を示す断面図、第６図は第５
図における発光ダイオードアレイ素子を取出して示す斜
視口である。
２１・・・プリント基板、２２・・・支持基板、２３・
・・溝、２４・・・溝、２５．２６．２７・・・発光ダ
イオードアレイ素子、２８・・・導電性接着層、２９・
・・電極、３０・・・端子、３１・・・切り欠き部。
出願人代理人 弁理士 鈴江武彦
第２図
第３図
第４図
第５図
第６図FIG. 1 is a plan view showing the structure of a conventional semiconductor light emitting device, FIG. 2 is a sectional view thereof, FIG. 3 is a plan view showing the structure of a semiconductor light emitting device according to an embodiment of the present invention, and FIG. 4 is a plan view showing the structure of a conventional semiconductor light emitting device. 5 is a sectional view showing another embodiment of the present invention, and FIG. 6 is a sectional view showing another embodiment of the present invention.
It is a perspective opening showing the light emitting diode array element in the figure taken out. 21... Printed circuit board, 22... Support board, 23.
... Groove, 24... Groove, 25.26.27... Light emitting diode array element, 28... Conductive adhesive layer, 29.
... Electrode, 30 ... Terminal, 31 ... Notch. Applicant's Representative Patent Attorney Takehiko Suzue Figure 2 Figure 3 Figure 4 Figure 5 Figure 6
Claims (1)
配列部に配置される複数の発光素子と、これら発光素子
を前記基板に接着する導電性接着層と、前記基板の配列
部及び前記発光素子の前記基板との対向面のいずれか一
方若しくは双方に設けられ、前記接着層の前記発光素子
の上面部への道上がりを防止する接着層追上がり防止部
とを具備したことを特徴とする半導体発光装置。a substrate provided with an array section of light emitting elements; a plurality of light emitting elements disposed in the array section of this substrate; a conductive adhesive layer for bonding these light emitting elements to the substrate; The light emitting device is characterized by comprising an adhesive layer catch-up prevention portion provided on one or both of the surfaces of the light emitting element facing the substrate and preventing the adhesive layer from rising to the upper surface of the light emitting element. Semiconductor light emitting device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59042757A JPS60187070A (en) | 1984-03-06 | 1984-03-06 | Semiconductor light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59042757A JPS60187070A (en) | 1984-03-06 | 1984-03-06 | Semiconductor light emitting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60187070A true JPS60187070A (en) | 1985-09-24 |
Family
ID=12644862
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59042757A Pending JPS60187070A (en) | 1984-03-06 | 1984-03-06 | Semiconductor light emitting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60187070A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6387859U (en) * | 1986-11-27 | 1988-06-08 | ||
| JPH03160768A (en) * | 1989-11-09 | 1991-07-10 | Oerlikon Contraves Ag | Manufacturing method of hybrid circuit device having the same electronic component array and circuit manufactured by method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52134395A (en) * | 1976-05-06 | 1977-11-10 | Seiko Instr & Electronics Ltd | Led display device |
| JPS5676543A (en) * | 1979-11-28 | 1981-06-24 | Hitachi Ltd | Semiconductor element |
| JPS57181133A (en) * | 1981-04-30 | 1982-11-08 | Nec Home Electronics Ltd | Semiconductor device |
| JPS58125878A (en) * | 1982-01-21 | 1983-07-27 | Matsushita Electric Ind Co Ltd | Fixing substrate for light-emitting element |
-
1984
- 1984-03-06 JP JP59042757A patent/JPS60187070A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52134395A (en) * | 1976-05-06 | 1977-11-10 | Seiko Instr & Electronics Ltd | Led display device |
| JPS5676543A (en) * | 1979-11-28 | 1981-06-24 | Hitachi Ltd | Semiconductor element |
| JPS57181133A (en) * | 1981-04-30 | 1982-11-08 | Nec Home Electronics Ltd | Semiconductor device |
| JPS58125878A (en) * | 1982-01-21 | 1983-07-27 | Matsushita Electric Ind Co Ltd | Fixing substrate for light-emitting element |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6387859U (en) * | 1986-11-27 | 1988-06-08 | ||
| JPH03160768A (en) * | 1989-11-09 | 1991-07-10 | Oerlikon Contraves Ag | Manufacturing method of hybrid circuit device having the same electronic component array and circuit manufactured by method thereof |
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