JPS60182728A - Vertical type furnace - Google Patents
Vertical type furnaceInfo
- Publication number
- JPS60182728A JPS60182728A JP59037922A JP3792284A JPS60182728A JP S60182728 A JPS60182728 A JP S60182728A JP 59037922 A JP59037922 A JP 59037922A JP 3792284 A JP3792284 A JP 3792284A JP S60182728 A JPS60182728 A JP S60182728A
- Authority
- JP
- Japan
- Prior art keywords
- core tube
- partition
- heating element
- furnace
- outer cylinder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010438 heat treatment Methods 0.000 claims abstract description 14
- 238000005192 partition Methods 0.000 claims abstract description 12
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 3
- 238000000137 annealing Methods 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 9
- 239000010453 quartz Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 239000012530 fluid Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 229910000953 kanthal Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
Description
【発明の詳細な説明】
（１１発明の技術分野
本発明は縦型炉、詳しくは炉芯管に沿って流体を積極的
に対流させ炉内温度が均一化された縦型炉に関する。DETAILED DESCRIPTION OF THE INVENTION (11) Technical Field of the Invention The present invention relates to a vertical furnace, and more particularly to a vertical furnace in which the temperature inside the furnace is made uniform by actively convecting fluid along a furnace core tube.
（２）技術の背景
シリコンウェハの熱拡散などのために従来は主に横型炉
が用いられてきたが、最近縦型炉が注目されるようにな
った。その理由は、石英の摺動による石英粒子の発生が
ないので無塵化が実現され、自動化が容易かつ安価にで
き、省スペースと省エネルギーが達成され、また大口径
ウェハの処理を可能にするからである。(2) Background of the technology Traditionally, horizontal furnaces have been mainly used for thermal diffusion of silicon wafers, but recently vertical furnaces have been attracting attention. The reason for this is that there is no generation of quartz particles due to the sliding of the quartz, so it is dust-free, automation is easy and inexpensive, space and energy savings are achieved, and large diameter wafers can be processed. It is.
第１図に縦型炉の一例が断面図で示され、同図において
、１は炉芯管（石英管）、２はヒータ、３は電気炉、４
はウェハ、５は石英ボート、６はボートローダ、７はテ
ーブル面、８はフランジを示ず。ヒータ２は炉芯￥ｉ−
１を囲むよう配置され、これらが電気炉３内に収納され
、ウェハ４が入れられた石英ボート５ばボートローダ６
により上下方向にｕＪ動であり、操作においてフランジ
８は炉芯管１にふたをする機能を果し、またウェハ処理
に用いられるガスはガス導入孔９から供給される。An example of a vertical furnace is shown in cross section in Fig. 1, in which 1 is a furnace core tube (quartz tube), 2 is a heater, 3 is an electric furnace, and 4
5 is a wafer, 5 is a quartz boat, 6 is a boat loader, 7 is a table surface, and 8 does not show a flange. Heater 2 is the furnace core ￥i-
A quartz boat 5 and a boat loader 6 are arranged so as to surround the quartz boat 5 and the wafer 4 is placed in the electric furnace 3.
During operation, the flange 8 functions to cover the furnace core tube 1, and the gas used for wafer processing is supplied from the gas introduction hole 9.
（３）従来技術と問題点
第１図に示す縦型炉においては、流体が炉芯管ｌとヒー
タ２との間の空隙を自然対流によって上方に動き、一方
電気炉３の上方はテーブル面７とフランジ８によってふ
たをされた構造になっているので電気炉３の上方に熱せ
られた流体がたまる。(3) Prior art and problems In the vertical furnace shown in Fig. 1, the fluid moves upward in the gap between the furnace core tube l and the heater 2 by natural convection, while the upper part of the electric furnace 3 is on the table surface. 7 and a flange 8, heated fluid accumulates above the electric furnace 3.
その結果、炉芯管内の温度分布は第２図の線図に示され
る如くになる。なお第２図で、縦軸Ｈは炉芯管の高さを
、横軸Ｔは炉芯管内の温度を表す。As a result, the temperature distribution within the furnace core tube becomes as shown in the diagram of FIG. In FIG. 2, the vertical axis H represents the height of the furnace core tube, and the horizontal axis T represents the temperature inside the furnace core tube.
炉芯管内の温度が上記の如くであると、ウェハに加えら
れる例えばアニールの如き処理が不均一になり、ウェハ
から作られる半導体装置の特性にバラツキが発η二する
問題がある。If the temperature inside the furnace core tube is as described above, there is a problem that the processing applied to the wafer, such as annealing, becomes non-uniform, resulting in variations in the characteristics of semiconductor devices manufactured from the wafer.
（４）発明の目的
本発明は上記従来の問題に鑑み、ウェハ熱処理用の縦型
炉におい一部、炉芯管内の温度が均一化された本従型炉
を提供することを目的とする。(4) Purpose of the Invention In view of the above-mentioned conventional problems, it is an object of the present invention to provide a conventional vertical furnace for wafer heat treatment in which the temperature within a part of the furnace core tube is made uniform.
（５）発明の構成
そしてこの目的は本発明によれば、縦長の炉芯管とその
まわりに配置された発熱体が電気炉内に収納された炉に
おいて、炉芯管の軸に沿って発熱体を少なくとも一部が
平行になるように配置し、該発熱体とそれに隣接する空
間との間に仕切りを炉芯管の軸方向に配置し、発熱体表
面近傍では上昇気流を、また発熱体に隣接する空間では
下降気流を発生させることを特徴とする縦型炉を提供す
ることによって達成される。(5) Structure and object of the invention According to the present invention, in a furnace in which a vertically long furnace core tube and a heating element arranged around it are housed in an electric furnace, heat is generated along the axis of the furnace core tube. A partition is arranged in the axial direction of the furnace core tube between the heating element and the space adjacent thereto, so that an upward airflow is caused near the surface of the heating element, and This is achieved by providing a vertical furnace characterized in that a downdraft is generated in the space adjacent to the furnace.
（６）発明の実施例 以下本発明実施例を図面によって詳説する。(6) Examples of the invention Embodiments of the present invention will be explained in detail below with reference to the drawings.
本発明においては、ヒータ線１２（例えばカンタル線と
呼称される発熱体）を第３図に示される如く炉芯管１１
の軸と平行に配置する。In the present invention, a heater wire 12 (for example, a heating element called a Kanthal wire) is connected to a furnace core tube 11 as shown in FIG.
parallel to the axis of
そして第４図（ａｌの平面図と同図Ｂ−Ｂ線に沿う断面
を示すｆｂ）の断面図に示される如く、炉芯管１１の外
壁外方にヒータ線１２を配置しヒータ線１２の外方に仕
切り１４を炉芯管の軸方向に配置し、これらを外筒１３
で囲む。そして炉芯管１１は石英で、また外筒１３と仕
切り１４とはアルミナで作る。縦型炉のその他の部分は
第１図に示したものと同じに作る。Then, as shown in the cross-sectional view of FIG. A partition 14 is arranged outwardly in the axial direction of the furnace core tube, and these are connected to the outer cylinder 13.
Surround with The furnace core tube 11 is made of quartz, and the outer cylinder 13 and partition 14 are made of alumina. The other parts of the vertical furnace are constructed in the same manner as shown in FIG.
かかる構造により、ヒータ線１２の表面近傍では上昇気
流が、また仕切り１４と外筒１３の間では下降気流が生
じ、対流が積極的に発生する。上昇気流は第４図ｆｂｌ
に矢印で示す。With this structure, an upward air current is generated near the surface of the heater wire 12, and a downward air current is generated between the partition 14 and the outer cylinder 13, and convection is actively generated. The rising air is shown in Figure 4 fbl
Indicated by an arrow.
そして電気炉はそれを例えば３区域に分割し、各区域に
第４図に示す炉芯管を配置し、各区域で上記した対流を
発生させると、炉芯管内の温度の均一化は更に高められ
る。If the electric furnace is divided into, for example, three zones, and a furnace core tube shown in Figure 4 is placed in each zone, and the above-mentioned convection is generated in each zone, the temperature inside the furnace core tubes will be even more uniform. It will be done.
なおヒータ線はカンタル線に限られるものではなく、タ
ングステンの如き酸化され難いその他の材料で作った発
熱体であればよく、また外筒および仕切りも絶縁性と耐
熱性をもったその他の材料を用いて作ることができる。Note that the heater wire is not limited to Kanthal wire; any heating element made of other materials that are not easily oxidized, such as tungsten, may be used, and the outer cylinder and partitions may also be made of other materials that have insulation and heat resistance. It can be made using
（７）発明の効果
以上詳細に説明した如く本発明によれば、縦型炉におい
て炉芯管に沿って流体を積極的に対流させ、ヒートパイ
プの原理で炉芯管内の温度が均一化されるので、ウェハ
アニールにおける信頼性向上に効果大である。(7) Effects of the Invention As explained in detail above, according to the present invention, fluid is actively convected along the furnace core tube in a vertical furnace, and the temperature inside the furnace core tube is made uniform by the principle of a heat pipe. This is highly effective in improving reliability during wafer annealing.
第１図は従来の縦型炉の断面図、第２図は第１図の縦型
炉の炉芯管内の温度分布を示す線図、第３図は本実施例
におけるヒータ線の配置を示す斜視図、第４図ｆａｌと
ｆｂ）は本実施例の平面図と断面図である。
１１−炉芯管、１２− ヒータ線、
１３−外筒、１４−仕切り
第１図
第３図
第４図
１りFigure 1 is a cross-sectional view of a conventional vertical furnace, Figure 2 is a diagram showing the temperature distribution in the furnace core tube of the vertical furnace shown in Figure 1, and Figure 3 is a diagram showing the arrangement of heater wires in this embodiment. The perspective view and FIGS. 4 fal and fb) are a plan view and a sectional view of this embodiment. 11-furnace core tube, 12-heater wire, 13-outer cylinder, 14-partition Figure 1 Figure 3 Figure 4 Figure 1
Claims (1)
内に収納された炉において、炉芯管の軸に沿って発熱体
を少なくとも一部が平行になるように配置し、該発熱体
とそれに隣接する空間との間に仕切りを炉芯管の軸方向
に配置し、発熱体表面近傍では上昇気流を、また発熱体
に隣接する空＋７４７では下降気流を発生させることを
特徴とする縦型炉。In a furnace in which a vertically elongated furnace core tube and a heating element arranged around it are housed in an electric furnace, the heating element is arranged so that at least a part of it is parallel to the axis of the furnace core tube, and the heating element is placed in parallel with the axis of the furnace core tube. A partition is arranged in the axial direction of the furnace core tube between the body and the space adjacent thereto, and an updraft is generated near the surface of the heating element, and a downdraft is generated in the air adjacent to the heating element. Vertical furnace.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59037922A JPS60182728A (en) | 1984-02-29 | 1984-02-29 | Vertical type furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59037922A JPS60182728A (en) | 1984-02-29 | 1984-02-29 | Vertical type furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60182728A true JPS60182728A (en) | 1985-09-18 |
Family
ID=12511034
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59037922A Pending JPS60182728A (en) | 1984-02-29 | 1984-02-29 | Vertical type furnace |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60182728A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6382932U (en) * | 1986-11-19 | 1988-05-31 | ||
| CN103243393A (en) * | 2013-05-06 | 2013-08-14 | 上海煦康电子科技有限公司 | Air preheating device, diffusion furnace and inlet air preheating method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4963668A (en) * | 1972-10-20 | 1974-06-20 | ||
| JPS56165317A (en) * | 1980-05-26 | 1981-12-18 | Fujitsu Ltd | Manufacture of semiconductor device |
-
1984
- 1984-02-29 JP JP59037922A patent/JPS60182728A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4963668A (en) * | 1972-10-20 | 1974-06-20 | ||
| JPS56165317A (en) * | 1980-05-26 | 1981-12-18 | Fujitsu Ltd | Manufacture of semiconductor device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6382932U (en) * | 1986-11-19 | 1988-05-31 | ||
| CN103243393A (en) * | 2013-05-06 | 2013-08-14 | 上海煦康电子科技有限公司 | Air preheating device, diffusion furnace and inlet air preheating method |
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