JPS6017452A - Manufacture of copying machine - Google Patents

Manufacture of copying machine

Info

Publication number
JPS6017452A
JPS6017452A JP13073984A JP13073984A JPS6017452A JP S6017452 A JPS6017452 A JP S6017452A JP 13073984 A JP13073984 A JP 13073984A JP 13073984 A JP13073984 A JP 13073984A JP S6017452 A JPS6017452 A JP S6017452A
Authority
JP
Japan
Prior art keywords
semiconductor
half
layer
charge
upper face
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13073984A
Inventor
Shunpei Yamazaki
Original Assignee
Shunpei Yamazaki
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shunpei Yamazaki filed Critical Shunpei Yamazaki
Priority to JP13073984A priority Critical patent/JPS6017452A/en
Publication of JPS6017452A publication Critical patent/JPS6017452A/en
Application status is Pending legal-status Critical

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY
    • G03GELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02Charge-receiving layers
    • G03G5/04Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited

Abstract

PURPOSE:To execute at a high speed a transfer plural times by the same charge, by constituting so that a cluster of a semiconductor or a layer of a film is placed between two (half) insulating films, and forming a layer for catching and accumulating a charge. CONSTITUTION:A semiconductor layer 1 consisting of a P type semiconductor 21 and an intrinsic semiconductor 23 is formed on an electric conductor substrate 2, and on this upper face, a (half) insulating film 26 (example: a silicon nitride film) of a thickness which is capable of making a current flow is laminated, and it is formed as a layer of a photoconductive semiconductor or a half insulator. On this upper face, a cluster 50 of a semiconductor is manufactured so as to constitute a well type in respect of energy, and also, on its upper face, the second (half) insulating film 27 is manufactured. A few carriers in electron hole pair generated by an optical irradiation 20 are recoupled to the injected charge. Or a powder 53 is attracted by this electrostatic charge and attracted to the surface of the insulating film 27 in proportion to quantity of the electrostatic charge. Also, it is unnecessary to accumulate the electrostatic charge again at every time of printing, and with respect to a copying machine which executes printing plural times, a desirable result is obtained.
JP13073984A 1984-06-25 1984-06-25 Manufacture of copying machine Pending JPS6017452A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13073984A JPS6017452A (en) 1984-06-25 1984-06-25 Manufacture of copying machine

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13073984A JPS6017452A (en) 1984-06-25 1984-06-25 Manufacture of copying machine

Publications (1)

Publication Number Publication Date
JPS6017452A true JPS6017452A (en) 1985-01-29

Family

ID=15041466

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13073984A Pending JPS6017452A (en) 1984-06-25 1984-06-25 Manufacture of copying machine

Country Status (1)

Country Link
JP (1) JPS6017452A (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54145537A (en) * 1978-05-04 1979-11-13 Canon Inc Preparation of electrophotographic image forming material
JPS564150A (en) * 1979-06-22 1981-01-17 Takao Kawamura Electrophotographic receptor
JPS56115573A (en) * 1980-02-15 1981-09-10 Matsushita Electric Ind Co Ltd Photoconductive element
JPS5711351A (en) * 1980-06-25 1982-01-21 Shunpei Yamazaki Electrostatic copying machine
JPS57200047A (en) * 1981-06-02 1982-12-08 Nippon Telegr & Teleph Corp <Ntt> Electrophotographic photoreceptor

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54145537A (en) * 1978-05-04 1979-11-13 Canon Inc Preparation of electrophotographic image forming material
JPS564150A (en) * 1979-06-22 1981-01-17 Takao Kawamura Electrophotographic receptor
JPS56115573A (en) * 1980-02-15 1981-09-10 Matsushita Electric Ind Co Ltd Photoconductive element
JPS5711351A (en) * 1980-06-25 1982-01-21 Shunpei Yamazaki Electrostatic copying machine
JPS57200047A (en) * 1981-06-02 1982-12-08 Nippon Telegr & Teleph Corp <Ntt> Electrophotographic photoreceptor

Similar Documents

Publication Publication Date Title
GB959667A (en) Improvements in or relating to methods of manufacturing unitary solid state electronic circuit complexes and to said complexes
JPS5588064A (en) Electrophotographic receptor
JPH04154147A (en) Semiconductor device and manufacture thereof
JPS61100759A (en) Photoconductive material
JPS574053A (en) Photoconductive member
ES8406797A1 (en) Improvements in a photovoltaic device
JPS54157092A (en) Semiconductor integrated circuit device
GB1464755A (en) Two-phase charge coupled devices
JPS56125868A (en) Thin-film semiconductor device
JPS583285A (en) Device for protecting semiconductor integrated circuit
JPS5857750A (en) Non-volatile semiconductor memory
US3333166A (en) Semiconductor circuit complex having low isolation capacitance and method of manufacturing same
JPH0449651A (en) Mos(mis) type capacitor
US2843511A (en) Semi-conductor devices
CA1126875A (en) Dielectrically-isolated integrated circuit complementary transistors for high voltage use
JPS5943568A (en) Photosensor array
JPS57100770A (en) Switching element
JPH04266028A (en) Manufacturing method of semiconductor integrated circuit
JPS5752179A (en) Photoconductive member
JPS55102267A (en) Semiconductor control element
JPS5752180A (en) Photoconductive member
WO1992020105A3 (en) Semiconductor detector
JPS55102268A (en) Protecting circuit for semiconductor device
JPH01175775A (en) Photo-driven mos semiconductor device
JPH04212426A (en) Semiconductor device and its manufacture