JPS60173887A - トンネル型ジヨセフソン接合素子の製法 - Google Patents

トンネル型ジヨセフソン接合素子の製法

Info

Publication number
JPS60173887A
JPS60173887A JP59023861A JP2386184A JPS60173887A JP S60173887 A JPS60173887 A JP S60173887A JP 59023861 A JP59023861 A JP 59023861A JP 2386184 A JP2386184 A JP 2386184A JP S60173887 A JPS60173887 A JP S60173887A
Authority
JP
Japan
Prior art keywords
superconductor layer
frequency plasma
oxidation treatment
barrier film
tunnel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59023861A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0479153B2 (cg-RX-API-DMAC7.html
Inventor
Junichi Nakano
純一 中野
Masato Wada
正人 和田
Fumihiko Yanagawa
柳川　文彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP59023861A priority Critical patent/JPS60173887A/ja
Publication of JPS60173887A publication Critical patent/JPS60173887A/ja
Publication of JPH0479153B2 publication Critical patent/JPH0479153B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0912—Manufacture or treatment of Josephson-effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
JP59023861A 1984-02-09 1984-02-09 トンネル型ジヨセフソン接合素子の製法 Granted JPS60173887A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59023861A JPS60173887A (ja) 1984-02-09 1984-02-09 トンネル型ジヨセフソン接合素子の製法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59023861A JPS60173887A (ja) 1984-02-09 1984-02-09 トンネル型ジヨセフソン接合素子の製法

Publications (2)

Publication Number Publication Date
JPS60173887A true JPS60173887A (ja) 1985-09-07
JPH0479153B2 JPH0479153B2 (cg-RX-API-DMAC7.html) 1992-12-15

Family

ID=12122220

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59023861A Granted JPS60173887A (ja) 1984-02-09 1984-02-09 トンネル型ジヨセフソン接合素子の製法

Country Status (1)

Country Link
JP (1) JPS60173887A (cg-RX-API-DMAC7.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6473778A (en) * 1987-09-16 1989-03-20 Semiconductor Energy Lab Formation of superconductive material of oxide
JPH0195575A (ja) * 1987-10-07 1989-04-13 Semiconductor Energy Lab Co Ltd 酸化物超伝導材料形成方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
IBM J RES DEVELOP=1980 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6473778A (en) * 1987-09-16 1989-03-20 Semiconductor Energy Lab Formation of superconductive material of oxide
JPH0195575A (ja) * 1987-10-07 1989-04-13 Semiconductor Energy Lab Co Ltd 酸化物超伝導材料形成方法

Also Published As

Publication number Publication date
JPH0479153B2 (cg-RX-API-DMAC7.html) 1992-12-15

Similar Documents

Publication Publication Date Title
JPS61134055A (ja) 半導体装置の製造方法
JPS60173887A (ja) トンネル型ジヨセフソン接合素子の製法
JPH055182B2 (cg-RX-API-DMAC7.html)
JP3489525B2 (ja) 超電導線材およびその製造方法
JPS58122724A (ja) 半導体素子の製造方法
JPS637675A (ja) 超伝導装置の製造方法
JPS6360555B2 (cg-RX-API-DMAC7.html)
JPS5685840A (en) Manufacture of semiconductor device
SU583515A1 (ru) Способ изготовлени шихтованных монолитных магнитопроводов
JP2003192398A (ja) 陽極接合方法
JPS5758336A (en) Manufacture of semiconductor device
JPS59194482A (ja) トンネル接合型ジヨセフソン素子
JPS59225530A (ja) 絶縁膜の形成方法
JPS6269574A (ja) トンネル型ジヨセフソン接合素子の製造方法
JPS6257114B2 (cg-RX-API-DMAC7.html)
JPS60787A (ja) トンネル形ジヨセフソン接合素子及びその製法
JPS6410647A (en) Manufacture of semiconductor device
JPS586188A (ja) ジヨセフソン接合素子
JPS60178676A (ja) トンネル型ジヨセフソン素子及びその製法
JPS5588355A (en) Manufacturing method of semiconductor device
JPS58122738A (ja) 半導体装置
JPS62174926A (ja) 半導体装置
JPS61228685A (ja) Ｎｂ系超伝導トンネル接合素子
JPS5642353A (en) Semiconductor device
JPS5842615B2 (ja) 多孔質シリコン絶縁層の形成方法