JPS60170230A - Manufacturing device for compound semiconductor - Google Patents

Abstract

PURPOSE:To prevent the damage of vessels caused by a pressure difference etc. in a compounding reaction and thereby to enable the stable and continuous compounding reaction, by reducing an area of contact of an inner vessel with an outer vessel. CONSTITUTION:An inner vessel 1 formed of a carbon boat and subjected to induction heating by a high-frequency wave is charged with Ga 2, a first material, and P (red phosphorus) 6, a second material, is put inside an outer vessel 5. Then, the inside of the outer vessel is exhausted to be vacuum and sealed up. When the outer vessel 5 is moved as indicated by an arrow through a reaction furnace for preparing a compound semiconductor, P6 is gasified in a first low- temperature region 8 to supply a P gas, and Ga 2 absorbs the P gas to generate a compounding reaction when passing through a high-temperature region 7 and educes GaP onto a second low-temperature side 9. The inner vessel 1 contacts with the outer vessel 5 only by legs 41 and 42 and is spaced by a gap l, and thus the effect of the heat of the inner vessel 1 transmitted to the outer vessel 5 is reduced considerably.

Description

DETAILED DESCRIPTION OF THE INVENTION Technical Field The present invention relates to an apparatus for manufacturing compound semiconductors by synthesizing raw materials under high pressure.

<Prior Art> Taking GaP as an example, the synthesis reaction of a compound semiconductor material is generally carried out in the following procedure. That is, the first
High-purity Ga as a material is set in an inner container made of carbon board, and this inner container and P (red phosphorus) as a second material are set in an outer container made of quartz. The inside of the outer container containing the first and second materials was set at approximately 1O-6 Torr.
After evacuating to a certain degree, seal it. the sealed outer container,
It is placed in a high-pressure furnace whose temperature distribution is maintained in advance to match the synthesis reaction conditions, and is gradually moved through the furnace with this temperature distribution, during which time the above-mentioned set materials are heated to G a 1 P2.
(or p4)→GaP is synthesized into a compound semiconductor having a GaP composition.

Figure 4 is an enlarged view of the GaP system equilibrium phase diagram near the composition 1i-JI:,I. As shown in this figure, GaP as a stable phase exists at a composition ratio of around 1:1, and its melting point is 1
The temperature is 465°C. Also, the equilibrium vapor pressure around this area is 39±
It is 7 atmospheres. Figure 5 shows the relationship between the pressure and altitude of P, which is the second material, and shows the relationship between the pressure and altitude of P, which is the second material.
At temperatures around ~1400°C, the vapor pressure of (1) is as high as 20 to 30 atmospheres. That is, during the process in which the outer container passes through a furnace maintained at a predetermined temperature distribution to undergo a synthesis reaction between materials, the inside of the outer container is filled with a high-pressure saturated P gas atmosphere. This outer container contains an inner container filled with Ga, so the Ga is heated to 1200-1400℃.
reacts with atmospheric P and synthesizes GaP. By gradually moving the entire outer container with the inner container installed from the high temperature section to the low temperature section, G a I) is precipitated in the low temperature section to generate a compound semiconductor.

In the synthesis process of the above compound semiconductor, 1! l! In the manufacturing equipment, the outer container and the inner container have a flat structure in which both are in contact with each other over a relatively wide area.

When proceeding with the synthesis reaction described in Section 2, Ga is generally heated by high-frequency induction heating. The container is locally heated to -1- below the curvature temperature. As mentioned above, the P vapor pressure during Douda synthesis is 20-3
Since the pressure exceeds 0 atm, it is installed in a high-pressure furnace that is filled with inert gas to protect the outer container. The vapor pressure of Shigashi P depends on how it collapses during the sublimation process.The outer container deforms due to the difference in internal and external pressure at the contact area with the inner container, especially when the outer container is deformed from the contact area to the outer container. This resulted in a situation where the reaction had to be stopped, making the compound semiconductor synthesis reaction unstable.

<Objective of the Invention> The present invention provides a manufacturing apparatus which eliminates the drawbacks of conventional compound semiconductor manufacturing apparatuses described in item 2, avoids damage caused by pressure differences between the inside and outside of an outer container, and allows a stable continuation of a synthesis reaction. .

<Example> The present invention provides an inner container heated to an island temperature for compound semiconductor synthesis by eliminating the contact area between the two, especially in the high-temperature part, when the inner container is housed in the outer container, thereby freeing up space. This is a compound semiconductor manufacturing apparatus that can prevent high-temperature heating above the deformation temperature of the banquette due to contact heating.

1 and 2 are a front sectional view and a side sectional view showing essential parts of an embodiment according to the present invention. In the figure, an inner container 1 made of a carbon board that can be heated inductively by high frequency waves is coated with Ga2, which is a first material. An opening 13 for introducing P gas, which will be described later, is bored in the wall surface of the inner container 1. Also, on the bottom of the inner container I, there are legs 4. for floating and supporting the board bottom plate. ,42
is provided. The inner container 1 is housed in an outer container 5 made of quartz, and is supported by the legs 4, 4 with a gap l between the outer container wall and the inner container bottom plate.1. Ru. A second material, P (red phosphorus) 6, is further stored inside the outside container 5, and the inside is evacuated to form 11 parts. Each material placed in the outer container 5 is heated in a furnace, or the area around the outer container 5 is heated with N2 gas at 20 to 30 atmospheres to reduce the force difference between the inside and outside that occurs during heating.
be done.

Figure 3 is a temperature distribution diagram in the reaction reactor for synthesizing compound semiconductors.
High temperature regions 7 maintained at about 0°C are set as synthesis reaction regions at relatively narrow intervals, and one side 8 (on the right side in the figure) sandwiching the image temperature region 7 has a temperature sufficient to vaporize P. It is held at a first low temperature, and the other side 9 (left side in the figure) is held at a second low temperature necessary to precipitate the synthesized GaP.

2. In the furnace, which is set to have the temperature distribution shown in FIG. P
6 is vaporized in the first low temperature region 8 to supply P gas, while Ga2 absorbs the supplied P gas when passing through the high temperature region 7 to cause a synthesis reaction, and the second low temperature region Ga on side 9
Precipitate P.

When the outer container 5 moves in the furnace having the above-mentioned temperature distribution, the inner container 1 that holds Ga that has reached a high temperature for the synthesis reaction is separated from the outer container 5 by the legs 4. , 42, and the effect of heat transfer from the inner container 1 to the outer container 5 is significantly suppressed by providing the gap 1.

1. In order to further enhance the effect of suppressing heating of the outer container, the position of the leg 41 of the inner container at the start of the synthesis reaction is set to the lower temperature side 9 outside the high temperature region 7, as shown by the broken line in FIG. The other leg 42 is kept in a position where it does not enter the high temperature region 7 even when the reaction is completed, and in short, the outer container is kept in a position where the contact part between the outer container 5 and the inner container I does not pass through the high temperature region. It is desirable to move the

Although the embodiment described in 1- is explained using GaP as an example, the present invention can be implemented in an apparatus for synthesizing a compound semiconductor by storing at least one of the materials in a double container and heating 1-. can.

According to the present invention, by adding a simple configuration, the contact area between the inner container and the outer container can be reduced, and damage to the container caused by pressure differences during synthesis reactions can be prevented. This makes it possible to significantly stabilize the synthesis of compound semiconductors. Pa.

[Brief explanation of drawings]

FIG. 1 is a front sectional view of essential parts showing an embodiment of the present invention, FIG. 2 is a side sectional view of the same, and FIG. 3 is a diagram of a furnace for synthesizing compound semiconductors using an embodiment of the present invention. Temperature distribution diagram, Figure 4 shows the main part of GaP phase diagram, Figure 5 shows P
FIG. 2 is a diagram showing the relationship between vapor pressure and temperature. l: Inner container, 2: Ga, 48,4°: Leg, 5: Outer container,
6. P, 7: High temperature region. Agent Patent attorney Aihiko Fukushi (and 2 others) 1st 1 2nd t) 1; C) ffii'+ 5 shi1 Procedural amendment November 2, 1980'+ro'Author's office official ('L)'Author's office) 1'Display of 11 items'Samurai; Takosho 59-27868 2 Name of Threat 1111 (; 1, Compound Semiconductor Manufacturing Equipment 3 Ura J1 Ro. 16 I [1 Case Relationship Patent Applicant 1 Agent 1 Location 545 Osaka City Abeno Ward Mayor, Yacho 22-22
Issue No. 641 City Il λ・l Elephant 7 Contents of amendment (1) “Board” in the 4th line of page 2 of the specification has been changed to [Boat]
I will correct it. (2) Page 5 of the specification! Change the 2nd line “Leg 4, 4 above” to “
I will correct the above legs to 41 and 42J. (3) Correction of Figures 4 and 5 of the drawings as shown in the attached sheet 1-
Masu. that's all

Claims (1)

[Claims] l) To synthesize a compound semiconductor by supplying at least one material for compound semiconductor synthesis in a gas phase and passing the material through a storage area held in the reaction section M. outfit jr
't, an inner container holding the first material, an outer container storing the second material and the inner container, and a gap forming a gap between the -1-oriented container wall surface and the outer container wall surface; An isochemical semiconductor manufacturing apparatus comprising a forming member. 2) Claim 1, wherein the gap forming member comprises a plurality of legs formed on the bottom surface of the inner container.
The compound semiconductor manufacturing apparatus described in 1.