JPS58161766A - Method for vacuum deposition of tungsten - Google Patents
Method for vacuum deposition of tungstenInfo
- Publication number
- JPS58161766A JPS58161766A JP4242982A JP4242982A JPS58161766A JP S58161766 A JPS58161766 A JP S58161766A JP 4242982 A JP4242982 A JP 4242982A JP 4242982 A JP4242982 A JP 4242982A JP S58161766 A JPS58161766 A JP S58161766A
- Authority
- JP
- Japan
- Prior art keywords
- wocl4
- vapor
- substrate
- wcl6
- vacuum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
- C23C16/14—Deposition of only one other metal element
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は低湿ＦでＷｔ−蒸着Ｔる真空゛蒸着法に関Ｔる
ものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a vacuum evaporation method for Wt-evaporation at low humidity.
従来の真空蒸着法は、蒸着Ｔべき金属【母材としてこれ
Ｐ加熱し、光分な蒸気圧が得られる温度に維持して蒸着
を行なうものである。この方法によりＷのａｍ？ｔ−行
った場合には、Ｗは３２０００Ｋに加熱することによっ
てはは／ Ｘ ／ （ｆ” Ｔｏｒｌの蒸気圧【Ｍ丁よ
う＆：なり・実用的な蒸着速度で点着が行なわｎる。と
ころで、蒸気圧は加熱温度に対してはぼ指Ｉｆ関数的に
変化Ｔるから・ｆＭ度かＪ２ｏｃｆ’Ｋｏｈわずかに３
かっても蒸気圧は極端に低下し、実用上蒸着が進行しな
い。したかつて上記の方法は・Ｗの無理方法として一母
材【Ｉｋ時間高温に維持Ｔる必要かあり、大菖力の消費
、母材からの強い輻射熱による基板、−置への悪影曽な
どの欠点を有していた。In the conventional vacuum evaporation method, the metal to be evaporated (as a base material) is heated and maintained at a temperature at which a light vapor pressure is obtained. By this method, W's am? By heating W to 32,000K, the vapor pressure of /X/(f) Torl can be achieved. , since the vapor pressure changes as a function of If with respect to the heating temperature, fM degrees or J2ocf'Koh is only 3
Even then, the vapor pressure drops extremely and vapor deposition does not proceed in practice. In the past, the above-mentioned method was one of the unreasonable methods of W. It was necessary to maintain the base material at a high temperature for a period of time, consumption of large heat, strong radiant heat from the base material caused negative effects on the substrate, etc. It had the following drawbacks.
本発明はこれらの欠点上除去Ｔるためになどｎたもので
、低温で４＠Ｌ易いＷＯＣｌａ 又はｗｃｚ。The present invention is aimed at overcoming these drawbacks and eliminating the low temperature WOCl or wcz.
【＃１い、蒸気と水素ガスで還元して真空中でＷ［蒸着
８せることを％黴とＴる。以Ｆ図１１０を参照しながら
本発明の詳細な説明Ｔる。[#1] Reduction with steam and hydrogen gas and vapor deposition of W [8%] in vacuum is called mold. The present invention will now be described in detail with reference to FIG. 110.
第１図６才本発明の一実施例【示Ｔ図であって、この図
においてｌはるつぼ、２は母材のＷＯＣｌ。FIG. 1 is a 6-year-old embodiment of the present invention. In this figure, l is a crucible and 2 is a base material, WOCl.
又はＷＣｊ−１８は加熱、冷却機構、４は蒸発したｗｏ
ｃ ４４ 又はＷ（Ｊ、の蒸気、５は水素ガス吠き込
み用ノズル、６は基板、７はＷの蒸着層、８は真空容器
である。Or WCj-18 is the heating and cooling mechanism, 4 is the evaporated wo
c 44 or W (J) vapor, 5 is a nozzle for injecting hydrogen gas, 6 is a substrate, 7 is a vapor deposition layer of W, and 8 is a vacuum container.
このｍｌ／図において、真空容器８中で、同容器内酩【
排気しつつ加熱、冷却＠９８＆：よってＷｏＣ４又４１
ＷＣ１＊ Ｂ ｋ 入ｎ ＊ ｂ ”） ｉｔ ｌ
ｋ 亭ｊ （Ｆ。In this ml/figure, in the vacuum container 8, the amount of alcohol [
Heating and cooling while exhausting @98&: Therefore, WoC4 or 41
WC1* B k in * b ”) it l
k tei j (F.
Ｋ前後の温度に保てば、ＷＯＣＪ４ 又はｗｃ７．ｓは
ＩＡ発り、ｓテ／ Ｔｏｒｒ程度の蒸気となる。この状
態のところにノズルらを通してＨ，ｌ吹き込めば−ＷＵ
Ｃ４又はＷＣ／、の蒸気とのＭ＆：１．７Ｈ！ ＋ Ｗ
ＯＣ４→Ｗ＋Ｈ，０＋参ＨＣ１又は
３Ｈ，＋ ＷＣ７，→Ｗ＋１ＨＣｊ
なる反応か進んでＷが生じ、基板６の上ｃＷの蒸着膜７
が形成ざｎる。If kept at a temperature around K, WOCJ4 or wc7. s originates from IA and becomes steam at about s/Torr. If you blow H and l through a nozzle into this state, -WU
M& with steam of C4 or WC/: 1.7H! ＋W
The reaction proceeds as follows: OC4→W+H,0+Reference HC1 or 3H,+WC7,→W+1HCj, W is produced, and the vapor deposited film 7 of cW is formed on the substrate 6.
is formed.
また、纂コＩｉＪは本発明の別の実施例を示Ｔ図である
。この図の参照符号でｌｌ／図と同一のものは同−ＩＩ
ａ要索を示Ｔ０この図において１６．１６は対向させた
二枚の放ｍｗ、極、ｌ？はＨ，プラズマである。Moreover, IiJ is a T diagram showing another embodiment of the present invention. Reference numbers in this figure that are the same as those in the figure are the same as II.
In this figure, 16.16 shows two opposing radiation mw, pole, l? is H, plasma.
この島コ図において、真空容器８の中で、同容器内すを
排気しつつ加熱、冷却機構８によってＷｏ ｃ １ｍ
又はＷＣｌ−を入れたるつ４ｆｌの温度【参！／に＊１
１ｃ保７Ｇ！、ＷｏＣｌｉ 又に’Ｓ Ｗｅ Ｊ＠
ｉａ ４；ｔ１１尭して／Ｔｏｒｒ根度の蒸気となる。In this island diagram, a heating and cooling mechanism 8 is used to heat the vacuum vessel 8 while evacuating the interior of the vessel.
Or the temperature of 4 fl of a melt containing WCl- [See! ／に＊１
1c protection 7G! , WoCli Matani'S We J@
ia 4; t11 and becomes /Torr steam.
この状部のと、ころにノズルＳ【禮してＨ１七次き込み
１ざら＆：放１１ｍ［ｆｉｌ ｆｉ 、ｌ ６ｉ１００
０Ｖ権度）電圧をかければＨ，プラズマ１７が尭ｉ■る
。At this shaped part, apply the nozzle S to the roller.
If a voltage of 0V is applied, H and the plasma 17 will decrease.
ＷＯＣｊ４又はＷＣＪ、の蒸気と亀ブラスマの間には
なる反応が進んでＷか生じ、基板６の上にＷの魚着換７
が形成される。The reaction between the steam of WOCj4 or WCJ and the turtle plasma progresses to produce W, and the W fish exchange 7 is deposited on the substrate 6.
is formed.
上記プラズマ形成にあたってＷＯＣｌ４又はＷｃｌ・蒸
気がプラズマ化Ｔる可能性も扁く、その場合の反応性は
ざらに高まって蒸着速度の同上につながる。In forming the plasma, there is a small possibility that WOCl4 or Wcl vapor will turn into plasma, and in that case, the reactivity will increase considerably, leading to an increase in the deposition rate.
以上説明したように、本発明による真空着層沫では、低
い温度で蒸着が行なゎｎるから、加熱電力の節約−輻射
熱による基板、に置への急影響の軽減に有効である。As explained above, since the vacuum deposition layer according to the present invention performs vapor deposition at a low temperature, it is effective in saving heating power and reducing the sudden effects of radiant heat on the substrate.
！た低圧力中で蒸着がなざｎるために残留ガスの膜中へ
の混入による展資低′Ｆ【防ぐことができる。! Since the vapor deposition is carried out at low pressure, it is possible to prevent the residual gas from entering the film.
易１図は本発明の一実施例を示Ｔ説明図翫易−図は本発
明の別の実施鈍【示Ｔ説明図である。
ｌ・・・・・・るっは、ト・・・・・母材のｗｏｃ４．
又はＷｃｌ・、８・・・・・・加熱、冷却ａｍ構、４・
・・・・・蒸発したＷＯＣ４又はＷ（’／＠の蒸気、ト
・団・も次き込み用ノズル・６・・−・・・基板、？・
・・・・・Ｗの蒸着膜、８・・・・・・真空容器１６・
・面放電薯極、１？・・・・・・Ｈ，プラズマ。
出願人 日不電信電話公社
第１図
第２図Figure 1 shows one embodiment of the present invention. Figure 1 is an explanatory diagram showing another embodiment of the present invention. l...ru...to...woc4 of the base material.
Or Wcl・, 8...Heating, cooling am structure, 4・
...evaporated WOC4 or W('/@ vapor, G, group, and next injecting nozzle, 6, --- substrate, ?-
... Vapor deposition film of W, 8 ... Vacuum container 16.
・Surface discharge pole, 1? ...H, plasma. Applicant: Nichifu Telegraph and Telephone Public Corporation Figure 1 Figure 2
Claims (1)
これに水素ガスを吹き込んでＶＫ）ＣＩ４又はＷＣＩ・
【還元してＷ【基板上に蒸着せしめること【特徴とする
タングステンの真空蒸着法。 ２ 吹き込んだ水素ガスを１気的に励起して放電プラズ
マ【生ぜしめ、ＷＯＣｌ４又はＷＣＩ・の還元【促進Ｔ
ることを特徴とする特許請求の範囲Ｉ！１項記載のタン
グステンの真空蒸着法。[Claims] 1. WOCR4 or WCjs *evaporated in vacuum,
Blow hydrogen gas into this and use VK) CI4 or WCI.
A vacuum evaporation method of tungsten characterized by [reducing W] and vapor depositing it on the substrate. 2 The injected hydrogen gas is excited once to generate a discharge plasma, and the reduction of WOCl4 or WCI.
Claim I! The tungsten vacuum deposition method according to item 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4242982A JPS58161766A (en) | 1982-03-17 | 1982-03-17 | Method for vacuum deposition of tungsten |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4242982A JPS58161766A (en) | 1982-03-17 | 1982-03-17 | Method for vacuum deposition of tungsten |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58161766A true JPS58161766A (en) | 1983-09-26 |
Family
ID=12635814
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4242982A Pending JPS58161766A (en) | 1982-03-17 | 1982-03-17 | Method for vacuum deposition of tungsten |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58161766A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5149596A (en) * | 1990-10-05 | 1992-09-22 | The United States Of America As Represented By The United States Department Of Energy | Vapor deposition of thin films |
| US10100406B2 (en) | 2015-04-17 | 2018-10-16 | Versum Materials Us, Llc | High purity tungsten hexachloride and method for making same |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4910573A (en) * | 1972-05-29 | 1974-01-30 | ||
| JPS55134170A (en) * | 1979-04-04 | 1980-10-18 | Oyo Kagaku Kenkyusho | Manufacture of deformed tungusten structure |
-
1982
- 1982-03-17 JP JP4242982A patent/JPS58161766A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4910573A (en) * | 1972-05-29 | 1974-01-30 | ||
| JPS55134170A (en) * | 1979-04-04 | 1980-10-18 | Oyo Kagaku Kenkyusho | Manufacture of deformed tungusten structure |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5149596A (en) * | 1990-10-05 | 1992-09-22 | The United States Of America As Represented By The United States Department Of Energy | Vapor deposition of thin films |
| US10100406B2 (en) | 2015-04-17 | 2018-10-16 | Versum Materials Us, Llc | High purity tungsten hexachloride and method for making same |
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