JPS60169888A - Manufacture of electronic thin film unit - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of Application of Industry 1-6 The present invention is directed to thin film I series 1. (1'-L・Ri1・II Lumi Z
, 1! electronic 'AV If! A method for manufacturing a W device.

i”I”l! , Technique f=I・f and the interval II'IJ+,
', j: 1 kenmata 1? , L device, for example, baud 4 on the 1st H.
2), a transparent electrode (2) is formed on the cuff (1) to become the -J of the counter electrode, and this 1. For example, 11. +Sa+0008C7J 5i (h #M edge 1
3 + 7' SiJ, + insulation 1τ (4 in 5 orders) is deposited by Batterlink, and the 1- of this is a +2.1- layer with a thickness of 6000 people. , for example/, nS: E L IN +51 due to Mn is aH
y2Chi color #'i 1m (61 and 5i3N4IN
(71) is deposited by sputtering, and the other electrode (8) of the opposing 'dX pole made of, for example, metal 1- is deposited thereon.

The transparent electrode (2) is attached to a glass substrate (as shown in Fig. 2).
For example, indium Aln and tin Sn? A transparent conductive IH made of M compound oxide resistant material is coated on the entire surface, and dirt is removed using AI, engineering, and noting. It is formed by selective corso tinting.This transparent?U 4!
! (2) 1it (2a) protrudes from each insulation 1@ +31, (4), (6), (7), etc. to the ゛C end A part as shown in Figure 1. form.

The other electrode (8) is insulated In +71-1-,
For example, a metal layer is deposited on the entire surface, and each stripe is made transparent by photolithography. i! +iti's tI! : It is patterned into a large number of stripes extending in a direction perpendicular to the longitudinal direction and arranged in a flat pattern.

However, when manufacturing a thin film IE device, an etching solution such as NaOl1 that does not etch the transparent electrode (2) is used as an etching solution for the metal layer. , some of the transparent electrodes (2) lose their transparency or are destroyed, resulting in a high incidence of defective products.

The inventors of the present invention conducted various experiments and considerations to investigate the causes and phenomena. This investigation first focuses on the dielectric layer that is interposed between the transparent electrode (2) and the AA metal layer that forms the electrode (8) when, for example, A6 is deposited on the entire surface. Each insulation +M (31, (4), (6), (7
) and L', L jl (5) are at most 1 μ as a whole.
m thickness, there may be defects such as pinholes that reach the electrode (2). In this case, pinholes etc. It is said that there are cases where the current reaches the electrode (2) through the defect, forming a minute current path and blocking the current. During the wet etching of photolithography, a Δp etching solution is applied between the metal layer and the transparent electrode (2) of a different type. Therefore, some transparent electrodes (2) are in a lattice state due to the A6 metal layer and the above-mentioned fine current path.
A battery action occurs between the electrodes (2) and the terminals (2a) exposed to the outside of the electrode (2), which are in contact with the electrolyte, are eroded. It was discovered that C peeled off and the electrode function was lost.

This means that even if the transparent electrode is not formed using a metal etching solution, that is, a strong alkaline etching solution, for example, the above-mentioned transparent conductive film made of a composite oxide of indium and tin, and the AN metal plate that forms the electrode (8). When the two are immersed and electrically connected, an electromotive force of 1.5 mm is generated, which can be confirmed by each 5 mA of current flowing.

Purpose of the Invention The present invention is based on two series of studies, and is based on two series of investigations. (
The present invention provides a method of manufacturing an electronic thin film device that can reliably pattern this electrode and improve yield.

Summary of the invention Blj In the present invention, a dielectric material 1- is sandwiched between dissimilar metals 1@
opposing electrodes consisting of at least one metal 1-
In a method for manufacturing an electronic thin film device, which includes an ethoning process in which a desired pattern is formed by selective etching, the etching process is preceded by a voltage application process in which a voltage is applied between opposing electrodes, and then an ethoning process for patterning the electrodes. This is what we do.

That is, in the present invention, by applying a voltage, defects such as pinballs in the insulation 1- are interposed between one electrode and the other electrode metal 1- to be patterned. The fine current path caused by the existing electrode metal 1- is disconnected to r to destroy the electrical continuity between both electrodes, and then the surface electrode part, for example, the i-electrode, is etched by Ysf during etching with a strong alkali. This will result in undesirable battery discharge.

EXAMPLE An example of the case where the thin film E7 device described in FIGS. 1 and 2 is subjected to iM will be described. In the present invention, a transparent electrode (2) in a striped pattern made of a composite oxide film of indium In and tin Sn is formed by depositing a transparent electrode (2) on a base, for example, a transparent glass base &(l), This is followed by e.g. 5i of 1000 people (
h insulating lid (31 and S'i3N+ insulating layers are sequentially deposited by sputtering, e.g. ZnS:Mn
El, In (51) is evaporated to a thickness of 6000 nm, and on top of this an insulating layer such as a Y2O3 insulating layer (6) and a 5iaN4 insulating layer 1t# (
71 and gold (I bar electrode j - for example i
Metal) H is deposited on the entire surface. Then this all over formed metal layer and each striped transparent? l! pole (2)
Either measure whether there is continuity between the electrode (2) and the metal layer, and apply a voltage between the conductive electrode (2) and the metal layer, or measure the entire stripe shape without performing such a measurement. Apply a voltage between the transparent electrode (2) and the beta metal layer 4
-ru. This voltage 1-IJ addition is several volts to several tens of volts, for example, IO
Apply a voltage of V. In this way, each insulation i* (
31, (4), (6), (7) and the EL layer (5), for example, through the pinball, at least a part of the fine current path by the metal is destroyed by discharge, and the metal is destroyed, thereby causing the The conduction between the metal layer and each striped transparent electrode (2) is interrupted. Then photoetch as usual. That is, an alkali-resistant photoresist is formed in a predetermined pattern on β metal 1, and β metal 1 is coated with alkali-resistant photoresist.
A striped electrode (81) is formed by immersing the substrate in a strong alkaline etching solution against - and performing wet etching.

On the other hand, it does not matter whether the voltage applied above is a DC voltage or an AC voltage, but AC voltage is more effective in preventing discharge breakdown of the fine current 1ffJ path caused by the metal. It can be done in a specific manner.

As described above, in the production performance of the present invention, °ζ is
Before patterning the surface electrode, a voltage is applied between this electrode metal 1 and the other electrode made of a different metal, such as a transparent electrode (2). A processing step is performed to destroy microcurrent paths communicating through the defective portions of the intervening dielectric layer, and then patterning of the ζ electrode is performed by etching using a dielectric. When using the method of the present invention, The destruction or characteristic deterioration of the electrode, such as the transparent electrode, mentioned at the beginning can be effectively avoided, and the yield can be significantly improved.

[Brief explanation of drawings]

FIG. 1 is an enlarged cross-sectional view of an example of a thin film EL device to which the manufacturing method of the present invention can be applied, and FIG. 2 is a perspective view of an example of the transparent electrode. ) and (8) are counter electrodes, (3),
In (4), (6), and (7), the insulation IL (5) is ELI-.

Claims (1)

[Claims] Opposing electrodes made of different metals are disposed between dielectric layers, and at least one of the metals is selectively etched into a desired pattern. In the manufacturing method, the electronic thin film device i' is characterized in that the process of applying 1141Il of voltage between the electrodes in the 1st direction and the 1141Il prior to the etching L culm is considered to be a +1 yen mark. Production of i′] J method.