JPS62115123A - Electrode substrate for display element - Google Patents

Electrode substrate for display element

Info

Publication number
JPS62115123A
JPS62115123A JP25453785A JP25453785A JPS62115123A JP S62115123 A JPS62115123 A JP S62115123A JP 25453785 A JP25453785 A JP 25453785A JP 25453785 A JP25453785 A JP 25453785A JP S62115123 A JPS62115123 A JP S62115123A
Authority
JP
Japan
Prior art keywords
insulating film
substrate
transparent electrode
film
transparent electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP25453785A
Other languages
Japanese (ja)
Inventor
Kenichi Mimori
健一 三森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alps Alpine Co Ltd
Original Assignee
Alps Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alps Electric Co Ltd filed Critical Alps Electric Co Ltd
Priority to JP25453785A priority Critical patent/JPS62115123A/en
Publication of JPS62115123A publication Critical patent/JPS62115123A/en
Pending legal-status Critical Current

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Landscapes

  • Liquid Crystal (AREA)

Abstract

PURPOSE:To prevent the generation of a short circuit, etc. in the shoulder part of transparent electrodes by laminating an insulating film on a substrate and transparent electrodes in the state of flattening the to surface thereof. CONSTITUTION:A thin film EL display element is constituted by successively laminating the transparent electrodes 12, the insulating film 13, EL light emitting film 14, the insulating film 15 and a counter electrode 16 on the substrate 11. The insulating film 13 covers the surface of the substrate 11 and the transparent electrodes 12 and the top surface thereof is flattened. The stop of the insulating film in the shoulder part of the transparent electrodes 12 is, therefore, eliminated and the EL light emitting film 14, insulating film 15 and counter electrode 16 formed on the insulating film 13 are respectively flatly formed. The transparent electrodes are thus thoroughly covered by the insulating film 13, by which the generation of the short circuit is considerably decreased and the reliability is improved.

Description

【発明の詳細な説明】 「技術分野」 本発明は、EL表示素子、液晶表示素子などの各種表示
素子用電極基板に関する。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to an electrode substrate for various display elements such as EL display elements and liquid crystal display elements.

r従来技術およびその問題点」 EL表示素子、液晶表示素子などの各種表示素子におい
ては、ガラス等の基板上にパターン化された透明電極を
形成し、さらにその上に絶縁膜を積層した基板が用いら
れている。
``Prior art and its problems'' In various display elements such as EL display elements and liquid crystal display elements, a patterned transparent electrode is formed on a substrate such as glass, and an insulating film is further laminated on the substrate. It is used.

従来の薄膜EL表示素子について説明すると、第7図に
示すように、ガラス基板l上に、ITO膜などからなる
透明電極2がパターン化されて形成され、基板lおよび
透明電極2上には、絶縁膜3が形成されている。さらに
、絶縁膜3上に、EL発光n莫a、絶縁膜5、対向電極
8が順次積層されて素子が構成されている。この薄膜E
L表示素子は、透明電極2と対向電極6との間に数10
Hzから数KHzの交流電界を印加することにより、E
L発光膜4の活性種イオンが励起され、発光するように
なっている。
To explain a conventional thin film EL display element, as shown in FIG. 7, a transparent electrode 2 made of an ITO film or the like is formed in a pattern on a glass substrate l, and on the substrate l and the transparent electrode 2, An insulating film 3 is formed. Further, on the insulating film 3, an EL light emitting device, an insulating film 5, and a counter electrode 8 are sequentially laminated to form a device. This thin film E
The L display element has several tens of layers between the transparent electrode 2 and the counter electrode 6.
By applying an alternating current electric field of Hz to several KHz, E
The active species ions in the L-light emitting film 4 are excited and emit light.

しかしながら、−h記のような薄膜EL表示素子では、
基板1および透明電極2上に絶縁膜3を形成するとき、
絶縁膜3が均一な厚さで積層されるので、透明電極2の
肩部2aに段差が形成される。そして、この段差は、絶
縁膜3上に形成するEL発光膜4、絶縁膜5、対向電極
6にもそのまま残されることになる。このように段差が
できると、その部分における絶縁M3等の厚さが極めて
薄くなるため、ショート等が発生しやすくなるという問
題点があった。このため、製品の歩留りや素子の信頼性
が低下していた。
However, in a thin film EL display element like the one described in -h,
When forming the insulating film 3 on the substrate 1 and the transparent electrode 2,
Since the insulating film 3 is laminated with a uniform thickness, a step is formed on the shoulder portion 2a of the transparent electrode 2. This step also remains as it is on the EL light emitting film 4, the insulating film 5, and the counter electrode 6 formed on the insulating film 3. When such a step is formed, the thickness of the insulation M3 and the like at that portion becomes extremely thin, which poses a problem in that short circuits and the like are more likely to occur. For this reason, product yield and device reliability have been reduced.

「発明の目的」 本発明の目的は、上記従来技術の問題点を解決し、透明
電極の肩部におけるショート等の発生を防上して信頼性
を向」−させた表示素子用電極基板を提供することにあ
る。
``Object of the Invention'' The purpose of the present invention is to provide an electrode substrate for a display element that solves the problems of the prior art described above and improves reliability by preventing the occurrence of short circuits at the shoulders of transparent electrodes. It is about providing.

「発明の構成」 本発明の表示素子用電極基板は、基板上にパターン化さ
れた透明電極と絶縁膜とを備えた表示素子用電極基板に
おいて、前記基板および前記透明電極−1−に前記絶縁
膜が上面を平坦化された状態で積層されていることを特
徴とする。
"Structure of the Invention" The electrode substrate for a display element of the present invention includes a patterned transparent electrode and an insulating film on the substrate, in which the electrode substrate and the transparent electrode -1- are provided with the insulating film. It is characterized in that the films are stacked with their top surfaces flattened.

このように、基板および透明電極上に絶縁膜が上面を平
坦化された状態で積層されているので、透明電極の肩部
における段差がなく、透明電極が絶縁膜によってしっか
りと覆われるのでショートの発生が防11−され、素子
の信頼性が向上する。
In this way, the insulating film is laminated on the substrate and the transparent electrode with the top surface flattened, so there is no step at the shoulder of the transparent electrode, and the transparent electrode is firmly covered by the insulating film, which prevents short circuits. This is prevented and the reliability of the device is improved.

r発明の実施例」 11図には、本発明を適用した薄膜EL表示素子の実施
例が示されている。
Embodiment of the Invention" FIG. 11 shows an embodiment of a thin film EL display element to which the present invention is applied.

この薄膜EL表示素子は、ガラス基板11−にに、透明
電極12.絶縁膜13、EL発光膜14、絶縁膜15、
対向電極16が順次積層されて構成されている。透明電
極12はl11203に5n02をドープしたITO膜
からなり、絶縁膜13および15はTa205からなり
、KL発光膜はZnSにMnをドープした膜からなり、
対向電極16はAI膜からなっている。そして、本発明
では、絶縁膜13が基板11および透明電極12」二を
覆い、その上面が平坦化されている。したがって、透明
電極12の肩部における絶縁膜13の段部はなく、絶縁
膜13上に形成されるEL発光膜14、絶縁膜15、対
向電極16もそれぞれ平坦に形成されている。
This thin film EL display element includes a glass substrate 11-, a transparent electrode 12-, and a transparent electrode 12-. Insulating film 13, EL light emitting film 14, insulating film 15,
The counter electrodes 16 are sequentially stacked. The transparent electrode 12 is made of an ITO film in which l11203 is doped with 5n02, the insulating films 13 and 15 are made of Ta205, the KL light emitting film is made of a film in which ZnS is doped with Mn,
The counter electrode 16 is made of an AI film. In the present invention, the insulating film 13 covers the substrate 11 and the transparent electrode 12'', and its upper surface is flattened. Therefore, there is no stepped portion of the insulating film 13 at the shoulder portion of the transparent electrode 12, and the EL light emitting film 14, the insulating film 15, and the counter electrode 16 formed on the insulating film 13 are also formed flat.

透明電極12および絶縁膜13は、次のようにして形成
することができる。すなわち、第2図に示すように、基
板11上に透明電極12を厚さ1500〜2000人程
度に形成する。そして、透明電極12」二にレジスト1
7(商品名r 0FPR−800J 、東京応化(株)
製)を厚さ1〜2 $LIlで塗布し、現像してパター
ン化する。第3図に示すように、エツチングして透明電
極12のレジスト17で覆われていない部分を除去し、
透明電極12をパターン化する。第4図に示すように、
Taをターゲットとし、Ar 80SCCM、0213
8CCHの雰囲気下、基板温度120℃以下の条件でス
パッタリングして、Ta205からなる絶縁膜13′を
形成する。この場合、絶縁膜13°の厚さは透明電極1
2と同じ程度の厚さ、すなわち1500〜2000人と
する。第5図に示すように、リフトオフ法により、レジ
スト17を剥離してレジスト17上に積層された絶縁膜
13′を除去する。これにより、絶縁膜13° と透明
電極12とが同じ高さ、すなわち透明電極12の間隙に
絶縁膜13°が埋設された状態となる。第6図に示すよ
うに、前記と同様な条件でスパッタリングし、絶縁膜1
3°および透明電極+21−にさらにTa205を積層
して絶縁膜13を形成する。透明電極12」−への絶縁
膜13の積層厚さは5000Å以下程度とする。こうし
て、透明電極12は絶縁膜13によって完全に覆われ、
しかも絶縁膜13上面は平坦化される。なお、絶縁膜1
3としては、Y2O3、5iJ4.5iOz、SiCな
ども使用できる。
The transparent electrode 12 and the insulating film 13 can be formed as follows. That is, as shown in FIG. 2, a transparent electrode 12 is formed on a substrate 11 to a thickness of about 1,500 to 2,000 layers. Then, the transparent electrode 12'' and the resist 1
7 (Product name r0FPR-800J, Tokyo Ohka Co., Ltd.)
Coat (manufactured by) to a thickness of 1 to 2 $LI1 and develop into a pattern. As shown in FIG. 3, the portions of the transparent electrode 12 that are not covered with the resist 17 are removed by etching.
The transparent electrode 12 is patterned. As shown in Figure 4,
Targeting Ta, Ar 80SCCM, 0213
An insulating film 13' made of Ta205 is formed by sputtering in an atmosphere of 8CCH at a substrate temperature of 120.degree. C. or lower. In this case, the thickness of the insulating film 13° is the thickness of the transparent electrode 1
The thickness is about the same as 2, that is, 1,500 to 2,000 people. As shown in FIG. 5, the resist 17 is peeled off and the insulating film 13' laminated on the resist 17 is removed by a lift-off method. As a result, the insulating film 13° and the transparent electrode 12 are at the same height, that is, the insulating film 13° is buried in the gap between the transparent electrodes 12. As shown in FIG. 6, the insulating film 1 was sputtered under the same conditions as above.
An insulating film 13 is formed by further laminating Ta205 on the transparent electrode +21- and the transparent electrode +21-. The thickness of the insulating film 13 on the transparent electrode 12'' is approximately 5000 Å or less. In this way, the transparent electrode 12 is completely covered with the insulating film 13,
Moreover, the upper surface of the insulating film 13 is flattened. Note that the insulating film 1
3, Y2O3, 5iJ4.5iOz, SiC, etc. can also be used.

ネらに、絶縁膜13上のEL発光膜14、絶縁膜15、
対向電極16は、従来と同様な方法、例えばスパッタリ
ング法などで形成することができる。
Furthermore, the EL light emitting film 14 on the insulating film 13, the insulating film 15,
The counter electrode 16 can be formed by a conventional method, such as a sputtering method.

この薄膜EL表示素子では、絶縁膜13に段差がないの
で、透明電極12が絶縁膜13により完全に覆われ、シ
ョートの発生が極めて少なくなり、信頼性が向上したも
のとなっている。
In this thin film EL display element, since there is no step difference in the insulating film 13, the transparent electrode 12 is completely covered with the insulating film 13, the occurrence of short circuits is extremely reduced, and reliability is improved.

なお、本発明は、薄膜EL表示素子だけでなく、例えば
液晶表示素子などの電極基板にも適用することができる
。ただし、本発明は、全体の層が薄く形成され、しかも
高電圧が印加されるため、透明電極の肩部におけるショ
ートの発生が多い薄膜EL表示素子に特に効果的である
Note that the present invention can be applied not only to thin film EL display elements but also to electrode substrates such as liquid crystal display elements. However, the present invention is particularly effective for thin film EL display elements in which short circuits often occur at the shoulders of transparent electrodes because the entire layer is formed thin and high voltage is applied.

「発明の効果」 以上説明したように、本発明によれば、基板および透明
電極上に絶縁膜が上面を平坦化された状態で積層されて
いるので、透明電極の肩部における段差がなく、透明電
極が絶縁膜によりしっかりと覆われてショートの発生が
防1Fされ、素子の信頼性が向上する。
"Effects of the Invention" As explained above, according to the present invention, since the insulating film is laminated on the substrate and the transparent electrode with the upper surface flattened, there is no step at the shoulder of the transparent electrode. The transparent electrode is tightly covered with the insulating film, preventing the occurrence of short circuits and improving the reliability of the device.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明を薄膜EL表示素子に適用した例を示す
部分断面図、第2図、第3図、第4図、第5図および第
6図は同薄膜EL表示素子の製造に際して基板−にに透
明電極および絶縁膜を形成する工程をそれぞれ順に示す
断面図、第7図は従来の薄膜EL表示素子の一例を示す
部分断面図である。 図中、11は基板、12は透明電極、13.13°は絶
縁膜、14はEL発光膜、15は絶縁膜、18は対向電
極である。
FIG. 1 is a partial cross-sectional view showing an example in which the present invention is applied to a thin film EL display element, and FIGS. FIG. 7 is a partial cross-sectional view showing an example of a conventional thin film EL display element. In the figure, 11 is a substrate, 12 is a transparent electrode, 13.13° is an insulating film, 14 is an EL light emitting film, 15 is an insulating film, and 18 is a counter electrode.

Claims (1)

【特許請求の範囲】[Claims] 基板上にパターン化された透明電極と絶縁膜とを備えた
表示素子用電極基板において、前記基板および前記透明
電極上に前記絶縁膜が上面を平坦化された状態で積層さ
れていることを特徴とする表示素子用電極基板。
An electrode substrate for a display element comprising a patterned transparent electrode and an insulating film on a substrate, characterized in that the insulating film is laminated on the substrate and the transparent electrode with the upper surface flattened. An electrode substrate for a display element.
JP25453785A 1985-11-13 1985-11-13 Electrode substrate for display element Pending JPS62115123A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25453785A JPS62115123A (en) 1985-11-13 1985-11-13 Electrode substrate for display element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25453785A JPS62115123A (en) 1985-11-13 1985-11-13 Electrode substrate for display element

Publications (1)

Publication Number Publication Date
JPS62115123A true JPS62115123A (en) 1987-05-26

Family

ID=17266420

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25453785A Pending JPS62115123A (en) 1985-11-13 1985-11-13 Electrode substrate for display element

Country Status (1)

Country Link
JP (1) JPS62115123A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62141517A (en) * 1985-12-16 1987-06-25 Canon Inc Liquid crystal element
CN111688377A (en) * 2017-03-23 2020-09-22 卡西欧计算机株式会社 Thermally expandable sheet

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62141517A (en) * 1985-12-16 1987-06-25 Canon Inc Liquid crystal element
CN111688377A (en) * 2017-03-23 2020-09-22 卡西欧计算机株式会社 Thermally expandable sheet

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