JPS6016451A - Manufacture of resin sealed type semiconductor device - Google Patents
Manufacture of resin sealed type semiconductor deviceInfo
- Publication number
- JPS6016451A JPS6016451A JP12530183A JP12530183A JPS6016451A JP S6016451 A JPS6016451 A JP S6016451A JP 12530183 A JP12530183 A JP 12530183A JP 12530183 A JP12530183 A JP 12530183A JP S6016451 A JPS6016451 A JP S6016451A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- semiconductor device
- sealed
- semiconductor chip
- ultraviolet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、比較的大電力を取シ扱うことのできる半導体
装置、いわゆる、パワー半導体装置に適する製造方法、
とシわけ、半導体チップ載置用の径大な支持体の全面を
外囲樹脂でおおった構造の樹脂封止形半導体装置の製造
方法に関する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a manufacturing method suitable for semiconductor devices capable of handling relatively large amounts of power, so-called power semiconductor devices;
In particular, the present invention relates to a method of manufacturing a resin-sealed semiconductor device having a structure in which the entire surface of a large-diameter support for mounting a semiconductor chip is covered with a surrounding resin.
従来例の（黄成とその問題点
パワー半導体装置は、半導体チ、ンプからの発熱を効果
的に放熱することが不可欠であるだめ、半導体チップが
径大な金属支持体に接着固定されており、捷だ、その径
大な金属支持体は、その裏面側を露出させた状態で、表
側の半導体チ・ツブをおおって外囲樹脂で封止成形され
ている。これは、所望の電子機器内に組み込むとき、そ
の放熱をいっそう良くするためであり、たとえば、電子
機器の所定放熱器体に対して、その露出面をよく接触さ
せ、その熱伝導性を高めるのに有効である。しかし、こ
のパワー半導体装置を放熱器体に電気的絶縁を保って固
定したいときには、たとえば、マイカ板のような薄い耐
熱性絶縁板を介在させなければならないため、その取付
は作業が甚だ面倒である・
そこで、金属支持体の裏面側にも薄い樹脂層を形成した
パワー半導体装置が提案され、すでに、実用されている
。との構造の一例は、第１図の断面図で示されるように
、金属支持体１の表面に半導体チップ２を載置したのち
、同金属支持体１の表裏両面をおおって、外囲樹脂体３
で封止成形した構造であり、その封止成形の際に、金属
支持体１ば、これより外方に延びる外部電極用リード４
およびその反対方向に延びて設けられた同支持体固定用
細条６によって、成形用金型枠に固定され、同金型空間
内で樹脂注入の圧力によって浮動しないようにしている
が、樹脂成形後には、固定用細条５は、その外囲樹脂体
３の近傍で切断される。In conventional power semiconductor devices, the semiconductor chip is adhesively fixed to a large-diameter metal support because it is essential to effectively dissipate the heat generated from the semiconductor chip. However, the large diameter metal support is sealed with an outer resin, covering the semiconductor chip on the front side with its back side exposed. This is to improve heat dissipation when the electronic device is incorporated into the device.For example, it is effective to bring the exposed surface into good contact with a predetermined heat sink body of an electronic device and increase its thermal conductivity.However, When it is desired to fix this power semiconductor device to the heatsink body while maintaining electrical insulation, a thin heat-resistant insulating plate such as a mica plate must be interposed, which makes the installation extremely troublesome. , a power semiconductor device in which a thin resin layer is also formed on the back side of a metal support has been proposed and is already in practical use.An example of this structure is shown in the cross-sectional view of Figure 1. After placing the semiconductor chip 2 on the surface of the metal support 1, the outer resin body 3 is placed on both the front and back sides of the metal support 1.
During the sealing process, the metal support 1 and external electrode leads 4 extending outward from the metal support 1 are sealed.
It is fixed to the mold frame for molding by the support fixing strip 6 provided extending in the opposite direction, and is prevented from floating due to the pressure of resin injection within the mold space. Later, the fixing strip 5 is cut in the vicinity of its outer plastic body 3.
しかし、この固定用細条５の切断部が露出されたまま放
置されると、この半導体装置を電子機器に装着した場合
に、この部分で絶縁不良を生じることが危・川されるた
め、同部分は第２図の断面図のように、たとえば、樹脂
等のシーリング材料６で被覆しておくことが望まれる。However, if the cut portion of the fixing strip 5 is left exposed, there is a risk of insulation failure occurring at this portion when this semiconductor device is installed in electronic equipment. It is desirable that the portion be covered with a sealing material 6 such as resin, as shown in the cross-sectional view of FIG.
ところが、通常の樹脂シーリング材料は、十分な性能を
得るために、１００〜２００℃の高温硬化処理を必要と
するが、この高温硬化処理は、熱による歪の誘発や半導
体装置の劣化を生じることもあり、できるだけ避けたい
ものである。However, ordinary resin sealing materials require high-temperature curing treatment at 100 to 200°C in order to obtain sufficient performance, but this high-temperature curing treatment may induce distortion due to heat or cause deterioration of semiconductor devices. This is something that I would like to avoid as much as possible.
発明の目的
本発明は、上述の従来例にみられる問題点を容易に解消
するものであり、安定品質の半導体装置を簡単な処理で
実現する製造方法を提供するものである。OBJECTS OF THE INVENTION The present invention easily solves the problems seen in the above-mentioned conventional examples, and provides a manufacturing method that realizes a semiconductor device of stable quality through simple processing.
発明の１１４成
本発明は、要約するに、半導体チップを載置した支持体
から延びる外部電極用リードおよび同支持体固定用細条
を用いて、前記半導体チップおよび前記支持体を樹脂封
止成形したのち、前記支持体固定用細条を前記樹脂封止
成形体の近傍で切断し、その切断部に紫外線硬化型の樹
脂を刺着し、紫外線により硬化させる工程をそなえたも
のであり、これにより、高温の熱処理を行なうことなし
に、比較的簡単な工程で切断部を絶縁被覆することがで
きる。114th aspect of the invention To summarize, the present invention is characterized in that the semiconductor chip and the support are resin-sealed and molded using external electrode leads extending from the support on which the semiconductor chip is placed and strips for fixing the support. Thereafter, the support fixing strip is cut in the vicinity of the resin-sealed molded body, and an ultraviolet curable resin is stuck to the cut part and cured by ultraviolet rays. , the cut portion can be insulated through a relatively simple process without performing high-temperature heat treatment.
実施例の説明
本発明を、第３図（ａ＞〜（ｅ）の実施例工程流れ図に
より、詳しく説明する。DESCRIPTION OF THE EMBODIMENTS The present invention will be explained in detail with reference to the process flowcharts of the embodiments shown in FIGS. 3(a>-(e)).
第３図（ＩＬ）の外観図では、たとえば、エポキシ系の
外囲樹脂体３の内部に、第１図の従来例と同様に、金属
支持体１およびこれに塔載された半導体チップ２が封有
され、それらが外部電極用リード４ならびに固定用細条
６で支えられて、樹脂成形されたものを示している。そ
して、外部電極用リード４は金属枠体７につながれ、ま
た、固定用細条５は別の金属枠体８につながれている。In the external view of FIG. 3 (IL), for example, a metal support 1 and a semiconductor chip 2 mounted thereon are inside an epoxy-based outer resin body 3, similar to the conventional example of FIG. It is shown sealed, supported by external electrode leads 4 and fixing strips 6, and molded with resin. The external electrode lead 4 is connected to a metal frame 7, and the fixing strip 5 is connected to another metal frame 8.
次に、Ｘ−ＸならびにＹ−Ｙで示す破断線に沿って、切
断すると、第３図（ｂ）に示すような半導体装置単体が
得られる。Next, by cutting along the breaking lines indicated by X--X and Y--Y, a single semiconductor device as shown in FIG. 3(b) is obtained.
そこで、第３図（０）のように、この半導体装置の固定
用細条６の切断部に、たとえば、黒インクなどで黒化層
９を形成する。Therefore, as shown in FIG. 3(0), a blackening layer 9 is formed using, for example, black ink at the cut portion of the fixing strip 6 of this semiconductor device.
次に第３図（ｄ）のように、離型性のよい樹脂材、たと
えば、商品名ＴＰＸ（三井化学工業製）で知られるポリ
オレフィン系樹脂で作ったマスキング部材１ｏをかぶせ
、その窓部に、液状エボギシアクリレート系の紫外線硬
化樹脂１１を注ぎ込む。Next, as shown in FIG. 3(d), a masking member 1o made of a resin material with good mold releasability, for example, a polyolefin resin known under the trade name TPX (manufactured by Mitsui Chemicals) is placed over the window. , a liquid epoxy acrylate-based ultraviolet curing resin 11 is poured.
そして、そのままの状態で紫外線発生器（不図示）から
の紫外線を１０〜３ｏ秒間投射すると、樹脂１１が固化
する。Then, when the resin 11 is exposed to ultraviolet rays from an ultraviolet generator (not shown) for 10 to 30 seconds in this state, the resin 11 is solidified.
その後、マスキング部材１ｏを取り外すと、第３図（ｅ
）のように、固定用細条の切断部をおおった樹脂１１を
そなえた半導体装置が得られる。After that, when the masking member 1o is removed, the masking member 1o is removed.
), a semiconductor device having resin 11 covering the cut portion of the fixing strip is obtained.
なお、本発明実施例で用いた黒化層９は、供電保護層で
、外囲樹脂と同色系のものになし、まだ、マスキング部
材１０はエポキシ系外囲樹脂体３によく密着し、紫外線
透過性があり、さらにエポキシアクリレート系紫外線硬
化型樹脂１１とは離型性のよいものを用いるのが適切で
ある。The blackening layer 9 used in the embodiment of the present invention is a power supply protective layer and is made of the same color as the surrounding resin, and the masking member 10 is still in close contact with the epoxy surrounding resin body 3 and is protected against ultraviolet rays. It is appropriate to use a material that is transparent and has good mold releasability from the epoxy acrylate ultraviolet curable resin 11.
発明の効果
本発明によれば、樹脂封止外囲体の近傍で切断された固
定用細条の露出部を紫外線硬化型の樹脂でおおうもので
あるから、ぜいぜい、３０秒程度の短時間の処理により
、硬化処理が行なわれ、生産性が高く、安定な品質のも
のが得られる。Effects of the Invention According to the present invention, since the exposed portion of the fixing strip cut in the vicinity of the resin-sealed envelope is covered with an ultraviolet curing resin, it takes about 30 seconds at most. The curing process is carried out in a short time, resulting in high productivity and stable quality.
第１図および第２図は従来例半導体装置の各断面図、第
３図（ａ）〜（ｅｌ）は本発明実施例の工程流れ図であ
る。
１・・・・・・金属支持体、２・・・・・・半導体チッ
プ、３・・・・・・外囲樹脂体、４・・・・・・外部電
極用リード、６・・・・・・シーリング材料、７，８・
・・・・・金属枠体、９・・・・・黒化層、１０・・・
・・・マスキング部拐、１１・・・・・・紫外線硬化型
樹脂。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名第１
図
？
３図
（ａ）1 and 2 are sectional views of a conventional semiconductor device, and FIGS. 3(a) to 3(el) are process flowcharts of an embodiment of the present invention. DESCRIPTION OF SYMBOLS 1... Metal support, 2... Semiconductor chip, 3... Surrounding resin body, 4... Lead for external electrode, 6...・・Sealing material, 7, 8・
...Metal frame, 9...Blackening layer, 10...
...Masking section, 11...Ultraviolet curing resin. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
figure? Figure 3 (a)
Claims (1)
極用リードおよび同支持体固定用細条を用いて、前記半
導体チップおよび前記支持体を樹脂封止成形したのち、
前記支持体固定用細条を前記樹脂封止成形体の近傍で切
断し、その切断部に紫外線硬化型の樹脂を付着し、紫外
線により硬化させる工程をそ々えた樹脂封止型半導体装
置の製造方法。 ？）紫外線硬化型の樹脂として、液状エポキシアクリレ
ート系樹脂が用いられる特許請求の範囲第１項に記載の
樹脂封止型半導体装置の製造方法。(1) After molding the semiconductor chip and the support body with a resin using external electrode leads extending from the support body on which the semiconductor chip is placed and strips for fixing the support body,
Manufacturing a resin-sealed semiconductor device comprising the steps of cutting the support fixing strip near the resin-sealed molded body, adhering an ultraviolet curable resin to the cut portion, and curing it with ultraviolet light. Method. ? ) The method for manufacturing a resin-sealed semiconductor device according to claim 1, wherein a liquid epoxy acrylate resin is used as the ultraviolet curable resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12530183A JPS6016451A (en) | 1983-07-08 | 1983-07-08 | Manufacture of resin sealed type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12530183A JPS6016451A (en) | 1983-07-08 | 1983-07-08 | Manufacture of resin sealed type semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6016451A true JPS6016451A (en) | 1985-01-28 |
| JPH0433133B2 JPH0433133B2 (en) | 1992-06-02 |
Family
ID=14906693
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12530183A Granted JPS6016451A (en) | 1983-07-08 | 1983-07-08 | Manufacture of resin sealed type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6016451A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9562872B2 (en) | 2012-05-29 | 2017-02-07 | 3M Innovative Properties Company | Humidity sensor and sensor element |
-
1983
- 1983-07-08 JP JP12530183A patent/JPS6016451A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9562872B2 (en) | 2012-05-29 | 2017-02-07 | 3M Innovative Properties Company | Humidity sensor and sensor element |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0433133B2 (en) | 1992-06-02 |
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