JPS60164321A - Semiconductor device producing apparatus - Google Patents

Abstract

PURPOSE:To keep the irradiation to a semiconductor wafer constant, by providing a chamber and a quartz window each having an elongated longitudinal length so that each semiconductor wafer is made movable in the longitudinal direction thereof corresponding to progress of the formation of a thin film and that light is irradiated on the wafer in accordance with the movement thereof. CONSTITUTION:A heater block 14 carrying a semiconductor wafer 15 is located within a chamber 11 on one end thereof and is heated to a predetermined temperature. A photochemical reactive gas is circulated within the chamber 11, while light sources 16 are lit so that the semiconductor wafer 15 is irradiated with the light through a quartz window 17. Photochemical reaction is thereby caused to occur on the surface of the semiconductor wafer 15 so that a thin film starts to be formed by deposition of the reactive product. The heater block 14 and the light sources 16 are moved toward the other end of the chamber corresponding to progress of the formation of the thin film, whereby the light from the light sources is always allowed to pass through a part of the quartz window 17 without fog. Accordingly, a constant light irradiation to the surface of the semiconductor wafer 15 is ensured. In such a manner, a thin film can be formed while avoiding fogging on the inner side of the quartz window involved by light irradiation, and thus the reactive product can be prevented from decreasing deposition thereof.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a semiconductor manufacturing apparatus, and particularly to a semiconductor manufacturing apparatus using photochemical reactions.

[Prior art]

The general configuration of this type of semiconductor manufacturing equipment according to the conventional example is shown in the first part.
As shown in the figure. That is, in FIG. 1, reference numeral 1 denotes a chamber configured to have a supply system 2 and a discharge system 3, and to allow a photochemically reactive gas to flow therein.
A plurality of semiconductor wafers 5 are placed in the chamber 1.
6 light sources placed above the outside of the chamber 1; 1 is placed in the chamber 1 so that the light from the light source 6 can reach each of the semiconductor wafers 5; It is a formed quartz window.

In the configuration of this conventional apparatus, each semiconductor wafer 5 is heated by the heater block 4, and a photochemically reactive gas such as silane is circulated in the chamber 1. Light source 6 through quartz window 7 on 5
By irradiating each of these semiconductor wafers 5 with light of
A desired thin film can be formed on the surface of each semiconductor wafer 5 by causing a photochemical reaction on the surface of the semiconductor wafer 5 and depositing the reaction product through the process of gas decomposition and adsorption onto the wafer surface. Thin films obtained by such photochemical reactions have the advantage that they can be formed at lower temperatures than, for example, thermal oxide films, and are less affected by pressure and can be formed under normal pressure. The formed thin film also has the advantage of less radiation damage and better film properties than, for example, plasma CVDMK.

However, since Kotobuki, on the other hand, in the case of conventional devices like this,
In the process of forming a thin film on the surface of each semiconductor wafer, a thin film is similarly formed on the inner surface of the quartz window within the 1,000-yamba range, causing cloudiness on the quartz window and reducing the transmittance of light from the light source. This has the disadvantage that the amount of reaction products deposited decreases and photochemical reactions no longer occur.

[Summary of the invention]

In view of these conventional drawbacks, the present invention provides a chamber configured to allow a photochemically reactive gas to flow therein, a quartz window provided in the chamber, and a quartz window provided in the chamber to be sufficiently long in the longitudinal direction. The heater block and each semiconductor wafer placed on the heater block can be sequentially moved in the longitudinal direction corresponding to the thin film forming process, and the light source can be moved in response to the movement of the heater block. A device that eliminates the reduction in the amount of reaction products deposited by irradiating light through a quartz window so that the amount of light irradiated onto the surface of each semiconductor wafer is always constant. It is.

[Embodiments of the invention]

Hereinafter, an embodiment of the semiconductor manufacturing apparatus according to the present invention will be described.
This will be explained in detail with reference to FIG.

The embodiment shown in FIG. 2 corresponds to the conventional device shown in FIG. 1. In this FIG. 2, reference numeral 11. A chamber 14 has a sufficiently long length in the longitudinal direction and has a supply system 12 and a discharge system 3 at each end to allow a photochemically reactive gas to flow therein. A heater block 16, which is movable in its longitudinal direction and on which a plurality of semiconductor wafers 15 can be placed, is located above the outside of the chamber 11 and corresponds to the range of the heater block 14. The light source 17 arranged in
A quartz window 18 is a plasma electrode provided at each end in the longitudinal direction of the chamber 11 to allow light to reach each of the semiconductor wafers 15. The heater block 14 on which the light source 16 is placed and the light source 16 are arranged using a known mechanical structure as appropriate, and the heater block 14 is placed inside the chamber 11, and the light source 16 is placed outside the 4000 Yamba 11, so that they can be connected to each other in correspondence with the thin film forming process. It is possible to move sequentially in the longitudinal direction of the chamber 11 in conjunction with the movement.

Next, the operation of this embodiment device will be described.

First, a heater block 14 on which a plurality of semiconductor wafers 15 are placed near one end of the chamber 11
At the same time, each semiconductor wafer 15 is heated to a predetermined temperature by the heater block 14, and a light source 16 is placed corresponding to the same position, and in this state, a photochemically reactive gas is heated.

For example, by flowing silane into this chamber 11 and by turning on the light source 16, the light from the light source 16 is irradiated onto each semiconductor wafer 15 through the corresponding part of the quartz window 17). A photochemical reaction occurs on the surface of each semiconductor wafer 15, and a desired thin film is formed on the surface of each semiconductor wafer 15 by depositing a reaction product through the process of gas decomposition and adsorption to the wafer surface. is started. At the same time, the quartz window 1 through which the light from the light source 16 passes through
Formation of a thin film starts similarly on the inside of the corresponding part 7, but no light is transmitted through the parts of the quartz window 17 other than the corresponding part, and no thin film is formed on the inside thereof. Therefore, the portions of the quartz window 17 other than the corresponding portions are not fogged.

Therefore, in conjunction with the start of forming the thin film described above, the chamber 11
The heater block 14 on which each semiconductor urchin/115 is mounted inside and the light source 16 outside the same yamba 11 are sequentially moved in the longitudinal direction to the other end side in accordance with the thin film forming process. As a result, the light from the light source 16 always passes through the clear quartz window 17, and the amount of light irradiated onto the surface of each semiconductor sea urchin 1) 15 can be kept constant at all times. Therefore, since the thin film can be uniformly deposited on the wafer surface, after the heater block 14 reaches the other end of the chamber 11, each semiconductor weight 15 on which the thin film has been formed is removed. After that, an etching gas is introduced into the chamber 11 and plasma discharge is performed to remove the reaction products deposited on the inside of the quartz window 17 in the thin film forming process. 11 can be reused, so the above operations are repeated.

In the above embodiment, the heater block in the chamber, each semiconductor wafer placed on the heater block, and the light source outside the chamber are sequentially moved in the longitudinal direction corresponding to the thin film forming process. The light transmittance position relative to the quartz window is sequentially changed.
Light sources are arranged in rows over the entire length of the quartz window in the longitudinal direction, and only the heater blocks on which each semiconductor wafer is placed are sequentially moved in the longitudinal direction in accordance with the thin film forming process, and as the heater blocks are moved, However, the same effect can be obtained even if the light sources corresponding to the same position are turned on partially according to the movement position.

〔Effect of the invention〕

As detailed above, according to the present invention, there is provided a chamber configured to allow a photochemically reactive gas to flow therein, a quartz window provided in this chamber having a sufficiently long length in the longitudinal direction, and a plurality of A heater block on which a sheet of semiconductor wafer 1 is placed and heated is made to be sequentially movable in the longitudinal direction corresponding to the thin film forming process within this chamber, and a heater block is moved in the longitudinal direction corresponding to the movement of the heater block. Since the light source is irradiated with light from a light source through a quartz window onto the surface of each semiconductor layer placed on top, the amount of light irradiated onto the surface of each semiconductor layer is always constant. It is possible to form a thin film that can be maintained and to avoid clouding on the inside of the quartz window due to this light irradiation, and therefore to prevent a decrease in the amount of reaction products deposited. By installing a plasma electrode and introducing an etching gas after forming a thin film to cause a plasma discharge effect, the thin film adhering to the inside of the quartz window can be removed, making it possible to continue using the device. The structure itself is relatively simple and has the advantage of being easily provided.・

[Brief explanation of drawings]

FIG. 1 is a sectional view showing an outline of a conventional semiconductor manufacturing apparatus, and FIG. 2 is a sectional view showing an outline of an embodiment of a semiconductor manufacturing apparatus according to the present invention. 11... Chamber, 12'J6 and 13... Photochemically reactive gas supply system and exhaust system, 14-
--- Heater block, 15 --- Semiconductor wafer, 1
6..e. light source, 17.φ.. quartz window, 18.. plasma electrode. Agent Masu Oiwa j8

Claims (1)

[Scope of Claims] (1) In a semiconductor manufacturing apparatus that forms a thin film by a photochemical reaction, a chamber configured to allow a gas having photochemical reactivity to flow therein, and a longitudinal side of a quartz window provided in this chamber. A heater block having a sufficiently long direction length and on which multiple semiconductor wafers are placed and heated can be sequentially moved in the longitudinal direction in accordance with the thin film forming process within the chamber. 1. A semiconductor manufacturing apparatus characterized in that □ light from a light source can be irradiated through a quartz window onto the surface of each semiconductor wafer placed on a block in accordance with the movement of the block. (21) The semiconductor manufacturing apparatus according to claim 1, characterized in that the light source is movable in conjunction with the heater block. (3) The light sources are arranged in rows over the entire longitudinal length of the quartz window,
2. The semiconductor manufacturing apparatus according to claim 1, wherein as the heater block moves, lighting of the light sources corresponding to the same position is partially controlled according to the moved position. (4) A semiconductor manufacturing apparatus according to claim 1 or 2, characterized in that a plasma electrode is provided within the chamber.