JPH07108836B2 - Low pressure CVD equipment - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a low pressure CVD apparatus for forming a tungsten film or a silicon film on the surface of a wafer or the like, and more particularly to a rapid heating type CVD apparatus using a lamp as a heating source.

[0002]

2. Description of the Related Art Conventionally, a rapid heating type C using a lamp as a heating source
As a VD device, an object to be heated is supported by a ring-shaped holder arranged in a decompression chamber, a lamp unit of a heating lamp is arranged so as to face the object to be heated, and heat rays emitted from the lamp unit are heated. What is configured to heat an object to be heated to 600 to 1000 ° C. by acting on an object, and to supply a processing gas into a decompression chamber to form a metal thin film on the surface of the object to be heated. It is provided. And in this apparatus, the quartz window was arrange | positioned between the decompression chamber and the lamp unit.

[0003]

However, in the conventional rapid heating type CVD apparatus, since the decompression chamber is formed by one chamber, the processing gas supplied into the decompression chamber is transferred to the quartz window chamber where the temperature becomes high. When it touched the exposed surface of the, it could chemically react with the quartz window and cloud the quartz window. When the quartz window becomes cloudy, the amount of heat supplied from the lamp unit is reduced, and the object to be heated cannot be heated sufficiently, resulting in a problem that the film forming performance is deteriorated. The present invention has been made in view of such a point, and an object thereof is to provide a rapid heating type CVD apparatus which does not cloud the quartz window.

[0004]

In order to achieve the above-mentioned object, the present invention forms a partition in a decompression chamber, and installs a ring-shaped holder in the opening formed in this partition,
The reaction chamber and the heating chamber are formed by partitioning the inside of the decompression chamber with the object to be heated mounted on the ring-shaped holder and the partition wall, and both chambers are set so that the internal pressure of the heating chamber becomes slightly higher than the internal pressure of the reaction chamber. The internal pressure of the chamber was set, the tip of the process gas supply path was opened in the reaction chamber, a quartz window was formed on the wall of the heating chamber facing the object to be heated, and the lamp unit was placed facing this quartz window. In addition, the quartz window arranged between the decompression chamber and the lamp unit is composed of a plurality of quartz glasses laminated with a minute interval, and the cooling liquid is circulated at high speed in the minute gaps between the quartz glasses. It is characterized by being configured as follows.

[0005]

In the present invention, the partition wall is formed in the decompression chamber, the ring-shaped holder is fitted and fixed in the opening formed in this partition wall, and the inside of the decompression chamber is surrounded by the object to be heated and the partition wall mounted on the ring-shaped holder. The reaction chamber and heating chamber are formed by partitioning, and the internal pressure of both chambers is set so that the internal pressure of the heating chamber is slightly higher than the internal pressure of the reaction chamber, and the tip of the processing gas supply path is set in the reaction chamber. Since the quartz window is formed on the wall of the heating chamber facing the object to be heated, and the lamp unit is arranged facing the quartz window, the processing gas supplied to the reaction chamber must flow into the heating chamber. Disappears. As a result, even if the quartz window has a high temperature, a chemical reaction with the processing gas does not occur, and the quartz window is not clouded.

Further, a quartz window arranged between the decompression chamber and the lamp unit is made up of a plurality of quartz glasses laminated with a minute interval, and the cooling liquid is passed at a high speed in a minute gap between the quartz glasses. With this configuration, the quartz window will not be cooled to a high temperature, and the chemical reaction with the processing gas can be suppressed. This will prevent the quartz window from becoming cloudy.

[0007]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The drawings show an embodiment of the present invention. FIG. 1 is an enlarged view of a main portion taken out, and FIG. 2 is a sectional view of a chamber portion of a CVD apparatus.

In this CVD apparatus, a lamp unit (2) is arranged above the decompression chamber (1), and heat rays are supported from the lamp unit (2) in the decompression chamber (1) with its surface facing downward. To be heated such as wafer substrate (3)
The object to be heated (3) is heated from the back side by irradiating the surface of the object, and a processing gas such as silane gas is jetted and supplied from the lower side into the decompression chamber (1) to supply the object to be heated (3). This is a rapid heating type CVD device configured to form a thin film on the surface.

The inside of the decompression chamber (1) is divided into upper and lower chambers by a quartz partition wall (4) formed in the shape of a bowl.
There is an opening (5) at the top of (4). Then, a ring-shaped holder for supporting the object to be heated (3) in the opening (5)
(6) is installed stably. This Ring Holder (6)
Is made of a heat-resistant material such as quartz, and by mounting the object to be heated (3) with the surface (treated surface) facing downward,
The surface of the object to be heated (3) supported by the ring-shaped holder (6) is exposed to the lower room defined by the partition wall (4).

A partition in the decompression chamber (1)
An opening (8) for supplying / discharging the object to be heated (3) is provided in the chamber peripheral side wall in the room (7) located above (4), and this opening (8) is provided to the object to be heated (3). The transport device (9) is moved in and out. In addition, an introduction path (10) for introducing a purging gas such as nitrogen or hydrogen and an exhaust path for discharging the indoor gas to the outside are connected to the room (7) located above the partition wall (4). There is.

On the other hand, the partition wall (4) in the decompression chamber (1)
An insertion port (13) for an object-to-be-heated fitting (12) for guiding and mounting the object-to-be-heated (3) on the ring-shaped holder (6) on the peripheral wall of the chamber in the room (11) located below Is opened, and the article-to-be-heated attachment (12) is attached to the insertion port (13). In this object-to-be-heated fitting (12), the tip of the rod is formed in a ring portion (14), and pins (15) are vertically formed on the ring portion (14) at appropriate intervals in the circumferential direction. Pin (1
The upper end of 5) is the object support base of the ring-shaped holder (6)
It is attached to the hole formed in part (17) so that it can move back and forth.
Further, the object-to-be-heated fitting (12) moves up and down by the operation of the lifting mechanism (16) to load the object-to-be-heated (3) carried into the upper chamber (7) by the object-to-be-heated conveying device (9). The ring-shaped holder (6) is positioned and mounted, or is transferred from the ring-shaped holder (6) to the heated object transfer device (9). Also, this partition
A chamber (11) located below (7) is connected to a supply passage (18) for a processing gas such as silane gas and an exhaust passage, and the tip of the reaction gas introduction passage (18) is a ring-shaped holder. The lower part of (6) is opened at an appropriate position where the ejected reaction gas can come into contact with the surface of the object (3) to be heated.

Therefore, the decompression chamber of this embodiment
In (1), the room (11) located below the partition (4) becomes the reaction chamber, and the room (7) located above the partition (4) becomes the heating chamber. During the film forming work, the internal pressure on the heating chamber (7) side is reduced to about 1.0 to several tens Torr, and
The internal pressure on the reaction chamber (11) side is reduced to about 0.1 to 10 Torr so that the heating chamber (7) and the reaction chamber (11) have a difference in internal pressure. In this way, by making a pressure difference between the internal pressures of the two chambers (7) and (11), the processing gas in the reaction chamber (11) can be treated by the heating chamber (7).
It will not flow to the side.

Further, a quartz window (19) is formed on the upper wall of the heating chamber (7) facing the object (3) to be heated, and the lamp unit (2) mentioned above is provided in a state of facing the quartz window (19). ) Is placed. This Quartz Window (19)
Is a pair of fused silica glass (20) (2)
0) and the cooling liquid chamber (21) formed on the outer peripheral portion of the quartz glass (20) (20), the quartz glass (20)
The cooling liquid is configured to flow at high speed through the minute gaps (22) between the (20).

In the CVD apparatus having the above structure, the inside of the decompression chamber (1) is divided by the partition wall (4) into the reaction chamber (11) and the heating chamber (7).
In addition, the internal pressure on the heating chamber (7) side is divided into the reaction chamber (1
Since it is set higher than the internal pressure on the 1) side, the processing gas does not flow into the heating chamber (7) side, and even if the quartz glass (20) fitted in the quartz window (19) heats up. , The processing gas no longer acts on the quartz glass (20), and the processing gas reacts with the quartz glass (20),
0) is not clouded. This ensures that the heat rays from the lamp unit (2) reach the object to be heated (3), so that the heating efficiency is improved and the quartz glass (2)
It is possible to omit the work for removing the cloudiness of 0).

Further, the heating chamber (7) and the lamp unit (2)
Since the quartz window (19) placed between and is made of double glass, and the cooling water is circulated at high speed in the gap between the glasses, it is difficult for the glass of the quartz window (19) to heat up. Even if the processing gas leaks to the heating chamber (7) side, the temperature of the glass surface is lowered, so that the reaction with the processing gas is less likely to occur, and the fogging of the glass can be suppressed.

FIG. 3 shows an example applied to a photo-CVD apparatus, in which a decompression chamber (1) is heated by a partition wall (4) in a heating chamber.
(7) and the reaction chamber (11) are partitioned, and the partition wall (4) supports an object to be heated (3) such as a wafer through a ring-shaped holder (6),
It is configured to supply a reaction gas to the reaction chamber (11), an ultraviolet ray generator (23) is arranged below the reaction chamber (11), and the ultraviolet ray generator (23) is used to move the inside of the reaction chamber (11). A thin film is formed on the surface of the object to be heated (3) by the ultraviolet rays irradiated to the object. The window glass (25) fitted in the glass window (24) formed between the ultraviolet ray generator (23) and the reaction chamber (11) is a double window, and this window glass (25) A hydrogen gas and a nitrogen gas for purging are circulated between them.

[0017]

According to the present invention, a partition is formed in the decompression chamber, a ring-shaped holder is installed in the opening formed in the partition, and the decompression chamber is surrounded by the object to be heated and the partition mounted on the ring-shaped holder. The reaction chamber and heating chamber are formed by partitioning, and the internal pressure of both chambers is set so that the internal pressure of the heating chamber is slightly higher than the internal pressure of the reaction chamber, and the tip of the processing gas supply path is set in the reaction chamber. Since the quartz window is formed on the wall of the heating chamber facing the object to be heated, and the lamp unit is arranged facing the quartz window, the processing gas supplied to the reaction chamber must flow into the heating chamber. Disappears. As a result, even if the quartz window becomes hot, a chemical reaction with the processing gas does not occur, the quartz window is not fogged, and the heating efficiency in the lamp unit can be kept high for a long time.

Further, the quartz window arranged between the decompression chamber and the lamp unit is made up of a plurality of quartz glasses laminated with a minute gap therebetween, and the cooling liquid is passed at a high speed in the minute gaps between the quartz glasses. With this configuration, the quartz window is cooled, the surface of the quartz window on the heating chamber side does not rise in temperature, and the chemical reaction with the processing gas can be suppressed. As a result, the quartz window does not become fogged and the heating efficiency in the lamp unit can be kept high for a long time.

Further, according to the present invention, since the fogging of the quartz window can be prevented, the replacement work of the window glass and the polishing work of the glass can be omitted, and the work efficiency of the film forming work can be improved.

[Brief description of drawings]

FIG. 1 is an enlarged view of a main part taken out.

FIG. 2 is a sectional view of a chamber portion of a CVD apparatus.

FIG. 3 is a sectional view of a chamber portion of the photo CVD apparatus.

[Explanation of symbols]

1 ... decompression chamber, 2 ... lamp unit, 3 ... object to be heated, 4 ... partition, 5 ... opening,
6 ... Ring-shaped holder, 7 ... Heating chamber, 11 ... Reaction chamber, 18 ... Processing gas supply path 19 ... Quartz window, 20 ... Quartz glass, 22 ... Minute gap.

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Hirokazu Onodera 2453 Iinoyamadainooka, Atsugi City, Kanagawa 20 Japan Institute of Industrial Technology, Ltd. (56) Bibliography 63-106767 (JP, U)

Claims (3)

[Claims] 1. An object to be heated (3) is stably supported by a ring-shaped holder (6) arranged in the decompression chamber (1), and the object to be heated (3) is exposed to heat rays from a lamp unit (2). In the low pressure CVD apparatus configured to heat by irradiation and to supply a processing gas into the low pressure chamber (1) to form a thin film on the surface of the object to be heated (3), the low pressure chamber (1) A partition (4) is formed in this partition
The ring-shaped holder (6) is installed in the opening (5) opened in (4), and the object to be heated (3) and the partition wall (4) mounted in the ring-shaped holder (6) are inside the decompression chamber (1). The reaction chamber (11) and the heating chamber (7) are formed by partitioning the chamber, and both chambers (7) are formed so that the internal pressure on the heating chamber (7) side is slightly higher than the internal pressure on the reaction chamber (11) side. ) (11) is set to an internal pressure, the tip of the processing gas supply path (18) is opened in the reaction chamber (11), and a quartz window (7) is placed on the wall surface of the heating chamber (7) facing the object to be heated (3). 19) forming
Lamp unit facing this quartz window (19)
A low pressure CVD apparatus characterized in that (2) is arranged. 2. A decompression chamber (1) and a lamp unit.
The quartz window (19) placed between (2) and the quartz window (19) are laminated at a very small interval.
The low pressure CVD according to claim 1, wherein the cooling liquid is made to flow at high speed through the minute gaps (22) between the quartz glasses (20).
apparatus. 3. An object to be heated (3) is supported by a ring-shaped holder (6) arranged in the decompression chamber (1), and the object to be heated (3) is irradiated with heat rays from a lamp unit (2). A low pressure CVD apparatus configured to heat the substrate to supply a processing gas into the decompression chamber (1) and irradiate the decompression chamber with ultraviolet rays to form a thin film on the surface of the object to be heated (3). In, the partition (4) is formed in the decompression chamber (1), and the partition
The ring-shaped holder (6) is installed in the opening (5) opened in (4), and the object to be heated (3) and the partition wall (4) mounted in the ring-shaped holder (6) are inside the decompression chamber (1). The reaction chamber (11) and the heating chamber (7) are formed by partitioning the chamber, and both chambers (7) are formed so that the internal pressure on the heating chamber (7) side is slightly higher than the internal pressure on the reaction chamber (11) side. (11) A low pressure CVD apparatus characterized in that an inner pressure of (11) is set, and a front end of a processing gas supply passage (18) is opened in a reaction chamber (11).