JPS6273727A - Light exciting processor - Google Patents

Abstract

PURPOSE:To obtain a light exciting processor which can simultaneously process a large number of substrates at high accumulating speed or etching speed and improve throughput by using a plurality of light sources, and constructing to dispose the substrates inside and outside the light source. CONSTITUTION:Substrates 16 to be processed and placed on the outer surface of a cylinder 11. The first transparent cylinder 12 made of synthetic quartz tube and the second transparent cylinder 13 having a diameter larger than the cylinder 12 are disposed coaxially with the cylinder 11 outside the cylinder 11. A plurality of ultraviolet light sources 14 made, for example, of low pressure mercury lamp are disposed between the cylinders 12 and 13. That is, a plurality of rodlike light sources 14 are disposed along the axial direction at an equal interval between the cylinders 12 and 13. An outer cylinder 15 is disposed outside the cylinder 13. The substrates 16 to be processed are placed on the inner surface of the cylinder 15.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to an improvement in a photo-induced processing apparatus for forming a film on a substrate or etching the surface of a substrate using a photo-excited chemical reaction.

[Technical background of the invention and its problems]

In recent years, methods have been developed that utilize chemical reactions caused by light energy to decompose source gases and form thin films on sample substrates such as semiconductor wafers and glass.

This method is called the photo-CVD method, and has the advantages of being able to form a film at a lower temperature and being free from damage caused by charged particles compared to normal film formation methods, and will be important in future thin film formation technology. It is attracting attention as something that occupies a certain position.

FIG. 4 is a schematic configuration diagram schematically showing a conventional photo-CVD apparatus, where a) shows a cross section, and FIG. 4 shows a longitudinal cross section.

A low-pressure mercury lamp 44 is arranged inside a quartz tube 43,
A substrate 46 is placed on the inner surface of the outer cylinder 45. The space between the quartz tube 43 and the external cylinder 45 is 10' [tor
r].

Monosilane (S!H4) and mercury are introduced into this space. Then, the substrate 46 is heated by resistance heating or the like, and the mercury lamp 44 is turned on to irradiate the substrate 46 with ultraviolet light, thereby depositing an amorphous silicon film on the surface of the substrate 46.

However, this type of device has the following problems. That is, since the light source exists in the center, in order to increase the deposition rate of the thin film, the quartz tube 43 and the outer cylinder 45 must be
It is necessary to shorten the distance between the substrate 46 and increase the intensity of the ultraviolet light on the substrate 46.

However, when the distance is shortened, the number of substrates 46 that can be placed on the external cylinder 45 decreases. Therefore, it is difficult to process a large number of substrates in a short time, and there are problems such as not being suitable for mass production.

[Purpose of the invention]

The present invention has been made in consideration of the above circumstances, and its purpose is to provide an optical CVD apparatus that can simultaneously process a large number of substrates at a high deposition rate or etching rate, and that can improve throughput. It is about providing.

[Summary of the invention]

The gist of the present invention is to improve throughput by using a plurality of light sources and by arranging substrates inside and outside the light sources.

That is, is the present invention placed in a source gas atmosphere? T! !
In a photo-excited film forming apparatus that irradiates light onto the surface of a treated substrate to perform film formation, etching, etc. on the surface of the substrate,
A central object arranged along a uniaxial direction and having a plurality of substrates placed on its outer peripheral surface, and a first transparent object made of a material that transmits light and arranged coaxially with the central object outside the central object. a cylindrical body; a second transparent cylindrical body made of a material that transmits light and disposed coaxially with the cylindrical body outside the first cylindrical body; and a second transparent cylindrical body made of a material that transmits light; an external cylindrical body disposed coaxially with the body and on which a plurality of substrates to be processed are placed; and the first and second transparent cylindrical bodies Rfl.
A plurality of light sources are provided, which are arranged in the substrate and irradiate each of the substrates to be processed with light.

〔Effect of the invention〕

According to the present invention, since the structure is such that the substrates can be placed inside and outside the space where the light source is placed, a large number of substrates can be processed simultaneously. Furthermore, even if the distance between the light source and the substrate is brought closer, a larger number of substrates can be processed compared to conventional devices. In other words, the deposition rate of thin films or the etching rate of the substrate surface can be increased, and a large number of substrates can be processed simultaneously. Therefore, throughput can be significantly improved.

Furthermore, the deposition rate of the thin film can be changed between the inside and outside of the light source, and aBIA can be formed on a plurality of substrates at the same time at two different deposition rates. Furthermore, by configuring the light source, the central object, and the outer cylindrical body to rotate relative to each other, it is possible to prevent the deposition rate from becoming non-uniform due to non-uniformity of light intensity.

[Embodiments of the invention]

Hereinafter, details of the present invention will be explained with reference to illustrated embodiments.

FIG. 1 is a schematic configuration diagram schematically showing a photoexcited film forming apparatus according to a first embodiment of the present invention, in which (a) shows a cross section, and (b) shows a longitudinal section. 11 in the figure is a central cylindrical body, and the outer surface of this cylindrical body 11 has a substrate 16 to be processed.
is placed. Outside the cylinder 11, a first transparent cylinder 12 made of a synthetic quartz tube and a second transparent cylinder 13 having a larger diameter than the cylinder 12 are arranged coaxially with the cylinder 11. . A plurality of ultraviolet light sources 14 made of, for example, low-pressure mercury lamps are arranged between the transparent cylinders 12,13. That is, a plurality of rod-shaped light sources 14 are arranged between the cylindrical bodies 12 and 13.
are arranged along the axial direction at equal intervals. Second
An external cylindrical body 15 is disposed outside the transparent cylindrical body 13 . A substrate to be processed 16 is placed on the inner surface of this external cylindrical body 15 .

Next, the operation of the present apparatus configured as described above will be explained using the formation of amorphous silicon (a-8i) as an example.

First, the space 17 between the central cylindrical body 11 and the first transparent cylindrical body 12 and the space 18 between the second transparent cylindrical body 13 and the external cylindrical body 15 are evacuated to a level of 10' [torr]. , monosilane (SiH4) gas containing mercury was flowed into these spaces 17 and 18 as a raw material gas fa 100
[scc+t+] and a pressure of 1 [torr].

Next, the substrate 16 is connected to a resistor of 1 Ω.

Heat to 250 [℃] using heat, etc., and use a low-pressure mercury lamp 14.
is turned on, and the surface of the substrate 16 is irradiated with ultraviolet light having wavelengths of 254 [nm] and 185 [nm].

As a result, ±10[%]g at a deposition rate of 3[μm/h1]
A-81 pattern was formed on the substrate 16 with uniformity below . In this case, since the deposition rate was faster than in the conventional apparatus, a desired film thickness could be obtained in a short time, and a large number of substrates could be processed simultaneously.

As described above, according to this embodiment, the Grand Duke's substrates can be processed at the same time, and thin films can be formed at a high deposition rate. Therefore, throughput can be significantly improved. Furthermore, by varying the distance of the substrate 16 from the light source 14 in the spaces 17.18, or by varying the gas introduction teeth into the spaces 17.18, it is possible to
dll! It is also possible to vary the deposition rate.

FIG. 2 is a cross-sectional view of the fir tree showing the schematic structure of the second embodiment. Note that the same parts as in FIG. 1 are given the same reference numerals, and detailed explanation thereof will be omitted.

This embodiment differs from the first embodiment described above as follows:
The transparent cylindrical body 12°13 to which the light source 14 is attached can be rotated. That is, the first and second transparent cylindrical bodies 12 and 13 are supported via bearings 23 to plate bodies 21 and 22 to which the central cylindrical body 11 and the external cylindrical body 15 are fixed. The structure is rotatable about the axis of the central cylindrical body 11. In addition, the above bearing 2
3 is not kept in a vacuum, so it is used in combination with an O-ring seal, etc. Further, the bottom portion of the transparent cylindrical body 12° 13 is fixed to a disc body 24. This disk body 24 is rotated by a motor 25 around the axis of the central cylindrical body 11.

With such a configuration, the first and second transparent cylindrical bodies 1
By rotating 2.13, the light source 14 can be rotated. Therefore, even if the light source 14 has uneven emission intensity, the integrated value of the amount of light irradiated onto the surface of the substrate 15 can be made uniform. Therefore, not only can the same effects as in the first embodiment described above be obtained, but also there are advantages such as a more uniform thin film formation rate.

FIG. 3 is a cross-sectional view schematically showing the schematic structure of the third embodiment. Note that the same parts as in FIG. 1 are given the same reference numerals, and detailed explanation thereof will be omitted.

This embodiment differs from the first embodiment described above as follows:
The reason is that 111 structure is used at one end of each cylindrical body. That is, the bottom opening of the external cylindrical body 15 is closed by the disc body 31. The bottom opening of the central cylindrical body 11 is similarly closed by the disk body 32. Furthermore, the first
The bottom of the second transparent cylindrical body 12.13 is the hollow disc body 3.
3, the first and second transparent cylindrical bodies 12°1
The bottom side of the annular space between 3 is closed.

With such a configuration, the raw material gas is introduced from the space 18 between the outer cylinder 15 and the second transparent cylinder 13, and the raw material gas is introduced from the space 18 between the first transparent cylinder 12 and the central cylinder 11. 17
gas can be exhausted from the

With this device, the raw material gas flow rate is 100 [sccml] as before.
When a thin film was formed using the method, the deposition rate was 3 [μm/h] on the substrate placed on the external cylinder 15.

A-3i with a uniformity of ±10% or less, a deposition rate of 2.5 μm/h on the substrate placed on the central cylindrical body 11, and a uniformity of 10% or less was obtained. At this time, the gas flow path area is 1/2 that of the first embodiment, so even if the flow rate is the same, the amount of gas used can be reduced to 1/2.

Thus, according to this embodiment, not only can the same effects as in the first embodiment described above be obtained, but also the amount of raw material gas used can be reduced to half, improving the utilization efficiency of raw material gas. There are advantages.

J5, the present invention is not limited to the embodiments described above. For example, the central object is not limited to a cylinder, but may be a rectangular cylinder, or even a "C" instead of a cylinder. However, in order to heat the substrate, a cylinder is better suited for the heating mechanism. It is desirable because it is easy to set up.

Further, the substrate placed on the central object may be a cylindrical λ substrate or the like. Furthermore, the light source is not limited to a low-pressure mercury lamp, but may also be a deuterium lamp or the like. Furthermore, conditions such as pressure, gas flow rate, and substrate temperature are determined by the required film thickness,
The window may be adjusted appropriately depending on the film quality.

In addition, the raw material gas is not limited to monosilane (S i H4), but also other higher silanes (for example, disilane (Siz
Hii >, trisilane (Si3Ha)), methylsilane-based gas (e.g. dimethylsilane (S 1f-12
(CI-43)2)) or a germane-based gas (for example, germane (GeHn)). Further, the thin film to be formed is not limited to a-8i, but may be a silicon oxide film, a silicon nitride film, or the like. When forming a silicon oxide film, a silicon nitride film, or the like, nitrous oxide (N20), ammonia (Nl-h), or the like may be mixed with monosilane or the like and used as a raw material gas. Alternatively, direct excitation without mercury may be used.

Furthermore, although the embodiments have described thin film formation by photo-CVD, the present invention can also be applied to photo-excited etching. For example, a phosphorus-doped poly S1 sample grown on a thermally oxidized 5iOz film on a 3i wafer was treated with l-I Q -X e in a gas containing F, (12, e.g. C122).
As a result of irradiation with ultraviolet light from a lamp, the etching rate was 0.
．． 2 [μm/win], uniformity of aeratin ±
A value of 10% or less was obtained.

In short, the present invention can be implemented with various modifications without departing from the gist thereof.

[Brief explanation of drawings]

FIG. 1 is a schematic configuration diagram schematically showing a photoexcited film forming apparatus according to a first embodiment of the present invention, FIG. 2 is a vertical cross-sectional view schematically showing the configuration of the second embodiment, and FIG. Embodiment 3 is a schematic configuration diagram schematically showing the third embodiment, and FIG. 4 is a schematic configuration diagram schematically showing a conventional device. 11... central cylindrical body (central object), 12...-first transparent cylindrical body, 13... second transparent cylindrical body, 14...
Light source, 15... External cylindrical body, 16... Substrate to be processed,
17゜18...Space, "21.22...Plate, 23
...Bearing, 24...Disc body, 25...Motor. Applicant's agent Patent attorney Takehiko Suzue (a) (b) Figure 1 Figure 2

Claims (7)

[Claims] (1) In a light excitation processing apparatus that irradiates light onto the surface of a substrate to be processed placed in a source gas atmosphere to form a thin film, etching, etc. on the surface of the substrate, the outer peripheral surface is a central object on which a plurality of substrates to be processed are placed; a first transparent cylindrical body made of a material that transmits light and disposed coaxially with the central object outside the central object; and a first transparent cylindrical body made of a material that transmits light. a second transparent cylindrical body disposed outside the first cylindrical body coaxially with the cylindrical body; and a second transparent cylindrical body disposed coaxially with the cylindrical body outside the second transparent cylindrical body,
an external cylindrical body on which a plurality of substrates to be processed are placed;
A photoexcitation processing apparatus comprising: a plurality of light sources disposed between the first and second transparent cylindrical bodies and irradiating each of the substrates to be processed with light. (2) The optical excitation processing device according to claim 1, wherein the central object is a cylindrical body. (3) The optical excitation processing apparatus according to claim 1, wherein the light source emits ultraviolet light. (4) The light source is disposed parallel to the central object and equidistantly spaced between the first and second transparent cylindrical bodies. optical excitation processing equipment. (5) Optical excitation processing according to claim 1, wherein at least one of the central object, the external cylindrical body, and the light source is rotated about the axis of the central object. Device. (6) one end of the external cylindrical body is closed;
2. The optical excitation processing device according to claim 1, wherein one of the annular spaces surrounded by the first and second transparent cylinders is closed. (7) A patent claim characterized in that raw material gas is introduced from between the external cylinder and the second transparent cylinder, and the gas is exhausted from between the central object and the first transparent cylinder. The optical excitation treatment device according to item 6.