JPS60158637A - Wire-bonding device - Google Patents

Wire-bonding device

Info

Publication number
JPS60158637A
JPS60158637A JP59012842A JP1284284A JPS60158637A JP S60158637 A JPS60158637 A JP S60158637A JP 59012842 A JP59012842 A JP 59012842A JP 1284284 A JP1284284 A JP 1284284A JP S60158637 A JPS60158637 A JP S60158637A
Authority
JP
Japan
Prior art keywords
conductor
wire
wiring
conductor wire
coating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59012842A
Other languages
Japanese (ja)
Inventor
Koichiro Izumi
和泉　孝一郎
Masaharu Takahara
高原　正晴
Setsuko Kawasaki
川崎　攝子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP59012842A priority Critical patent/JPS60158637A/en
Publication of JPS60158637A publication Critical patent/JPS60158637A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45565—Single coating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
    • H01L2224/85039—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/8521—Applying energy for connecting with energy being in the form of electromagnetic radiation
    • H01L2224/85214—Applying energy for connecting with energy being in the form of electromagnetic radiation using a laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To prevent a short circuit from generating between a pad part for external connection and a conductor wiring and to enable to perform a higher-density wiring by a method wherein the insulative coating film of the conductor wire coated with the insulative coating film is heat-removed, and the pad part for external connection and the core wire of the conductor wire are connected. CONSTITUTION:In the beam irradiating part 4a of a shielding member 4 for heating beam mask, a conductor wire 2 is heated with heating beams 3a, which are outputted from heating units 3, and the insulative coating film 2b of the conductor wire 2 is meltingly removed. Each one end of the conductor wire 2, whose insulative coating film 2b has been removed, is respectively bonded to a conductor wiring (metal paste) 7 and the pad part of a semiconductor integrated circuit element 6, both of which have been formed on a circuit wiring substrate 5, by an ordinary method and a wire-bonding connection is formed. Incidentally, the irradiation timing of the heating beams 3a is decided according to bonding information.

Description

【発明の詳細な説明】 〔発明の技術分野〕 この発明は集積回路素子上の外部接続用パッド部と回路
配線基板上の導体配線との間を導体線を用いて接続処理
するワイヤボンディング装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a wire bonding device that connects an external connection pad portion on an integrated circuit element and a conductor wiring on a circuit wiring board using a conductor wire. It is something.

〔従来技術〕[Prior art]

従来、この種のワイヤボンディング装置は配線する導体
線として直径２０〜５０μφ位の裸の金線あるいはアル
ミニワム線が使用されている。Conventionally, this type of wire bonding apparatus uses a bare gold wire or aluminum wire with a diameter of about 20 to 50 μΦ as a conductor wire.

しかしながら、従来のワイヤボンディング装置では、配
線する導体線を長時間保存すると、その表面に酸化膜が
生じるため、保存の管理を厳しく行なう必要がある。特
に、銀線あるいは銅線などにこの傾向が著しい、またボ
ンディング時、特に超音波振動発生時には裸ワイヤに傷
が付き易い、また特に、高密度配線の場合には、ボンデ
ィング後、ボンディングワイヤ同志が接触し易い、など
の欠点があった。However, in conventional wire bonding devices, if the conductor wires to be wired are stored for a long time, an oxide film will form on their surfaces, so storage must be strictly controlled. This tendency is particularly noticeable with silver wires or copper wires, and bare wires are easily damaged during bonding, especially when ultrasonic vibrations are generated.In particular, in the case of high-density wiring, bonding wires are easily damaged after bonding. There were disadvantages such as easy contact.

〔発明の概要〕[Summary of the invention]

したがって、この発明の目的は配線する導体線の表面酸
化を防止し、長時間の保存を可能にし、しかも異なる導
体線間で接触しても、外部接続用パッド部と導体配線と
が短絡せず、高密度配線を可能にしたワイヤボンディン
グ装置を提供するものである。Therefore, the purpose of this invention is to prevent surface oxidation of conductor wires to be wired, enable long-term storage, and prevent short-circuiting between external connection pads and conductor wires even if different conductor wires come into contact. , provides a wire bonding device that enables high-density wiring.

このような目的を達成するため、この発明は導体芯線に
絶縁被膜を被覆した導体線を用い、加熱装置により、こ
の導体線の絶縁被膜の一部あるいは全部を加熱除去し、
上記外部接続用パッド部と導体配線とを導体芯線で接続
処理するものであり、以下実施例を用いて詳細に説明す
る。In order to achieve such an object, the present invention uses a conductor wire whose conductor core wire is coated with an insulating coating, heats and removes part or all of the insulating coating of the conductor wire using a heating device,
The external connection pad portion and the conductor wiring are connected by a conductor core wire, and will be described in detail below using examples.

〔発明の実施例〕[Embodiments of the invention]

第１図はこの発明に係るワイヤボンディング装置の一実
施例を示す一部詳細な断面側面図である。FIG. 1 is a partially detailed cross-sectional side view showing an embodiment of the wire bonding apparatus according to the present invention.

同図において、１はヘッド部を構成するキャピラリ、２
は導体芯線２ａおよびこの導体芯線２ａを被覆した絶縁
被膜２ｂから構成されたワイヤボンディング用の導体線
、３はこの導体ｉ２の絶縁被膜２ｂを加熱溶練するため
、レーザ光線などの加熱ビーム３ａを出力する加熱装置
、４はビーム照射部４ａをもつ加熱ビームマスク用遮蔽
物である。In the figure, 1 is a capillary constituting the head part, 2
3 is a conductor wire for wire bonding composed of a conductor core wire 2a and an insulating coating 2b covering the conductor core wire 2a, and 3 is a heating beam 3a such as a laser beam to heat and melt the insulating coating 2b of the conductor i2. The output heating device 4 is a heating beam mask shield having a beam irradiation section 4a.

なお、５はアルミセラミックなどに金属により配線され
た回路配線基板、６は半導体集積回路素子、Ｔは上記回
路配線基板５上に形成された導体配線である。Note that 5 is a circuit wiring board wired with metal on aluminum ceramic or the like, 6 is a semiconductor integrated circuit element, and T is a conductor wiring formed on the circuit wiring board 5.

次に、上記導体線２の絶縁被膜ムを溶融除去したのち、
回路配線基板５の導体配線Ｔおよび半導体集積回路素子
６の外部接続用パッド部上に、導体線２の導体芯線２ａ
のそれぞれの一端が接続されるときの動作について説明
する。まず、加熱ビームマスク用遮蔽物４のビーム照射
部４ａにおいて、導体線２は加熱装置３から出力される
加熱ビーム３ａによって加熱される。このため、この導
体線２の絶縁被膜２ｂが溶融除去される。そして、この
絶縁被膜２ｂが除去された導体線２の各一端は通常の方
法で回路配線基板５上に形成された導体配線（金属ペー
スト）７および半導体集積回路素子６のパッド部にボン
ディングされ、ワイヤボンディング接続が形成される。Next, after melting and removing the insulation coating of the conductor wire 2,
The conductor core wire 2a of the conductor wire 2 is placed on the conductor wiring T of the circuit wiring board 5 and the external connection pad portion of the semiconductor integrated circuit element 6.
The operation when one end of each is connected will be explained. First, in the beam irradiation section 4a of the heating beam mask shield 4, the conductor wire 2 is heated by the heating beam 3a output from the heating device 3. Therefore, the insulating coating 2b of the conductor wire 2 is melted and removed. Then, each end of the conductor wire 2 from which the insulating coating 2b has been removed is bonded to the conductor wiring (metal paste) 7 formed on the circuit wiring board 5 and the pad portion of the semiconductor integrated circuit element 6 in a usual manner. A wire bond connection is formed.

なお、加熱ビーム３ａの照射タイミングはボンディング
情報（ボンディング開始、終了時期）により決定される
ことはもちろんである。It goes without saying that the irradiation timing of the heating beam 3a is determined by the bonding information (bonding start and end times).

第２図はこの発明に係るワイヤボンディング装置の他の
実施例を示す一部詳細な断面側面図であり、導体配線Ｔ
および半導体集積回路素子６のバンド部にボンディング
される導体線２の導体芯線２ａの部分の絶縁被膜２ｂの
みを溶融除去するものである。この場合のボンディング
情報としてはボンディング開始、終了時期のほか、ボン
デインク接合長、ボンディングワイヤ長などを伺加する
ことが必要であることはもちろんである。FIG. 2 is a partially detailed cross-sectional side view showing another embodiment of the wire bonding apparatus according to the present invention, in which the conductor wiring T
Then, only the insulating coating 2b of the conductor core wire 2a of the conductor wire 2 bonded to the band portion of the semiconductor integrated circuit element 6 is melted and removed. Of course, the bonding information in this case needs to include the bonding start and end times, bonding ink bonding length, bonding wire length, and the like.

〔発明の効果〕〔Effect of the invention〕

以上詳細に説明したように、この発明に係るワイヤボン
ディング装置は導体線がボンディング直前まで絶縁被膜
でおおわれているため、導体芯線の表面電化が防止でき
、長時間にわたる保存が可能になる。また、ボンディン
グ接合部以外が絶縁被膜でおおわれている場合には異な
る導体線間で接触した場合でも絶縁されているため、高
密度配線が可能になるなどの効果がある。As explained in detail above, in the wire bonding apparatus according to the present invention, the conductor wire is covered with an insulating film until immediately before bonding, so that surface electrification of the conductor core wire can be prevented and storage for a long time is possible. In addition, when the parts other than the bonding joints are covered with an insulating film, even if different conductor lines come into contact, they are insulated, so there is an effect that high-density wiring becomes possible.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図はこの発明に係るワイヤボンディング装置の一実
施例を示す一部詳細な断面側面図、第２図はこの発明に
係るワイヤボンディング装置の他の実施例を示す一部詳
細な断面側面図である。 １・ｅ・−キャピラリ、２・ｅ優伽導体制！、２ａ・・
・・導体芯線、２ｂ・・・・絶縁被Ｄ５３・・・φ加熱
装置、３１Ｌ・・・φ加熱ビーム、４・・・・加熱ヒー
ムマスク用遮Ｍ物、４ａ・・・・ビーム照射部、５・・
・・回路配線基板、６・拳・・半導体集積回路素子、７
・・・・導体配線。 特許出願人　日本電気株式会社 代　理　人　山川政樹（はが２名） 第１図 第２図FIG. 1 is a partially detailed cross-sectional side view showing one embodiment of the wire bonding apparatus according to the present invention, and FIG. 2 is a partially detailed cross-sectional side view showing another embodiment of the wire bonding apparatus according to the present invention. It is. 1・e・-capillary, 2・e Yuga leading system! , 2a...
... Conductor core wire, 2b... Insulated D53... φ heating device, 31L... φ heating beam, 4... Shielding M for heating beam mask, 4a... Beam irradiation part, 5・・・
・・Circuit wiring board, 6・Fist・・Semiconductor integrated circuit element, 7
...Conductor wiring. Patent applicant: NEC Corporation Agent: Masaki Yamakawa (2 people) Figure 1 Figure 2

Claims (1)

【特許請求の範囲】[Claims] 集積回路素子上の外部接続用パッド部と回路配線基板上
の導体配線との間を導体線を用いて接続処理するワイヤ
ボンティング装置において、導体芯線に絶縁被膜を被覆
した導体線を用い、加熱装置により、この導体線の絶縁
被膜の一部あるいは全部を加熱除去し、上記外部接続用
パッド部と導体配線とを導体芯線で接続処理すること′
ｌｋ特徴とするワイヤボンデインク装置。Wire bonding equipment uses conductor wire to connect between external connection pads on integrated circuit elements and conductor wiring on circuit wiring boards. Using a device, part or all of the insulation coating of the conductor wire is heated and removed, and the external connection pad portion and the conductor wiring are connected with the conductor core wire.
A wire bonding device featuring lk.
JP59012842A 1984-01-28 1984-01-28 Wire-bonding device Pending JPS60158637A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59012842A JPS60158637A (en) 1984-01-28 1984-01-28 Wire-bonding device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59012842A JPS60158637A (en) 1984-01-28 1984-01-28 Wire-bonding device

Publications (1)

Publication Number Publication Date
JPS60158637A true JPS60158637A (en) 1985-08-20

Family

ID=11816638

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59012842A Pending JPS60158637A (en) 1984-01-28 1984-01-28 Wire-bonding device

Country Status (1)

Country Link
JP (1) JPS60158637A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0332033A (en) * 1989-06-29 1991-02-12 Hitachi Ltd Electronic device
JPH0321851U (en) * 1989-07-12 1991-03-05
US5031821A (en) * 1988-08-19 1991-07-16 Hitachi, Ltd. Semiconductor integrated circuit device, method for producing or assembling same, and producing or assembling apparatus for use in the method
US5037023A (en) * 1988-11-28 1991-08-06 Hitachi, Ltd. Method and apparatus for wire bonding
JPH03229434A (en) * 1990-02-05 1991-10-11 Fujitsu Ltd Wire-bonding method
US5176310A (en) * 1988-11-28 1993-01-05 Hitachi, Ltd. Method and apparatus for wire bond
US5370300A (en) * 1992-07-22 1994-12-06 Rohm Co., Ltd. Method and apparatus for wire bonding
CN105374782A (en) * 2015-11-05 2016-03-02 华天科技（西安）有限公司 Coating bonding wire and manufacturing method thereof

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5031821A (en) * 1988-08-19 1991-07-16 Hitachi, Ltd. Semiconductor integrated circuit device, method for producing or assembling same, and producing or assembling apparatus for use in the method
US5037023A (en) * 1988-11-28 1991-08-06 Hitachi, Ltd. Method and apparatus for wire bonding
US5110032A (en) * 1988-11-28 1992-05-05 Hitachi, Ltd., Method and apparatus for wire bonding
US5176310A (en) * 1988-11-28 1993-01-05 Hitachi, Ltd. Method and apparatus for wire bond
JPH0332033A (en) * 1989-06-29 1991-02-12 Hitachi Ltd Electronic device
JPH0321851U (en) * 1989-07-12 1991-03-05
JPH03229434A (en) * 1990-02-05 1991-10-11 Fujitsu Ltd Wire-bonding method
US5370300A (en) * 1992-07-22 1994-12-06 Rohm Co., Ltd. Method and apparatus for wire bonding
CN105374782A (en) * 2015-11-05 2016-03-02 华天科技（西安）有限公司 Coating bonding wire and manufacturing method thereof

Similar Documents

Publication Publication Date Title
JPH02123685A (en) Method of bonding wire containing gold with solder
JPH0321047A (en) Semiconductor package sealed in capsule
EP0344970A3 (en) Process for bonding integrated circuit components
JPS60158637A (en) Wire-bonding device
JPH01192127A (en) Bonding
JPS6245138A (en) Manufacture of electronic part device
JP2792337B2 (en) Wire bonding equipment
JPS6050881A (en) Method of connecting wirings of coated electric conductor
JPH02106092A (en) Method of joining conductor
JP2531099B2 (en) Wire-bonding method
JPS61214530A (en) Wire bonding method and device therefor
JP3243906B2 (en) Method for joining semiconductor device to external terminal
JPS5944836A (en) Wire bonding method
JPH11163028A (en) Wire bonding device
JPH0590355A (en) Method and apparatus for wire bonding
EP0347997A2 (en) Method of producing a magnetic head as well as a magnetic head producted in accordance with the method
JPH09270443A (en) Method for mounting chips
JP2507794B2 (en) Wire bonding method
JPS6254500A (en) Wire connection
JPS61168949A (en) Wire-bonding method
JPH0218583B2 (en)
JP2970057B2 (en) Electronic component mounting board and wire bonding method
JPH01169885A (en) Soldering method
JPH0824121B2 (en) Bump electrode formation method
JPS6379331A (en) Wire bonding equipment