CN105374782A - Coating bonding wire and manufacturing method thereof - Google Patents
Coating bonding wire and manufacturing method thereof Download PDFInfo
- Publication number
- CN105374782A CN105374782A CN201510750110.4A CN201510750110A CN105374782A CN 105374782 A CN105374782 A CN 105374782A CN 201510750110 A CN201510750110 A CN 201510750110A CN 105374782 A CN105374782 A CN 105374782A
- Authority
- CN
- China
- Prior art keywords
- bonding wire
- insulating barrier
- coating
- coating bonding
- bonding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/4556—Disposition, e.g. coating on a part of the core
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45565—Single coating layer
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
The invention discloses a coating bonding wire and a manufacturing method thereof. An insulation layer of a coating bonding wire includes a polymeric material, the insulation layer under the condition of high temperature can be decomposed without any damage to the bonding wire. Through the coating bonding wire and the method, a short circuit problem of metal wires can be effectively solved, and packaging density and a packaging yield are further improved.
Description
Technical field
The present invention relates to the technical field of semiconductor encapsulation about lead key closing process, particularly a kind of coating bonding wire and preparation method thereof.
Background technology
Along with the continuous propelling of semiconductor technology and the market demand, making rapid progress of chip encapsulation technology development, continuing to bring out of multi-chip package MCP (Multi-ChipPackage), stacked package POP (PackageOnPackage), system in package SiP (SysteminPackage) and novel finger print identification encapsulation technology, traditional wire bonding interconnection technique is more and more not suitable with the requirement of High Density Packaging Technology, occurs that high density bonding wire occurs to hand over silk short circuit phenomenon.And along with novel finger print recognition technology is for the requirement of ultralow bank, needs bonding line to force down to the distance very near with chip, but like this phenomenon that bonding wire and chip interconnects are short-circuited then easily is occurred for conventional keys plying, thus affect properties of product.
In order to address this problem, the flat 7-268278 of Japan Patent discloses a kind of bonding line, and be made up of bonding wire and the insulating barrier being formed in its periphery, its outward appearance is identical to those shown in Fig. 1.Disclose in this document polyurethane resin, nylon resin, polyamino resin, fluorine race resin, to fat, Corvic etc.The bonding wire scribbling polyester material is not suitable for bonding, because the hardness of polyester is too high.The thermal endurance of the resin of mylar, polyamino resin, nylon resin and fluorine race is very high.But, in these resins each all can not when bonding decompose by heating-up temperature, but can be carbonized, particularly in the end fusing of coating bonding wire with when being formed as Metal Ball, thus the interference conveying of bonding wire and the bonding between Metal Ball and electrical terminal.On the other hand, in order to height reliability bonding coatings and lead-in wire, need by means of the insulating barrier in the bonding part of the coated thread of radiation treatment heat abstraction on lead-in wire one side, but carbonization material is retained on the surface of bonding wire, therefore can not carry out bonding afterwards safely and reliably.
In the heat resistant epoxide resin being used as insulating layer material, the raising of heat-resistant quality avoids generation carbonization material, and can improve the reliability of bonding.But, even if when the coating bonding wire with the insulation formed by heat resistant epoxide resin, also insulating barrier must be removed by means of radiation treatment, thus be difficult to remove insulating barrier when not melting bonding wire and ensureing stability.
Summary of the invention
The object of this invention is to provide a kind of coating bonding wire, coating bonding wire insulating barrier contains polymeric material, and insulating barrier at high temperature can volatilize or decompose and not damage bonding wire.
A kind of coating bonding wire, described structure comprises bonding wire and insulating barrier, and described insulating barrier covers the periphery of bonding wire, and the material of described insulating barrier is terephthalic acid (TPA), polybutylene terephthalate, poly(4-methyl-1-pentene) or PAEK.
Described bonding wire material is gold, aluminium, copper, silver or plating palladium copper.
Described insulating barrier all covers bonding wire, or interval covers bonding wire.
Described coating bonding wire forms metallurgical connection with aluminium, gold or nickel/gold solder dish by bonding.
Described insulating barrier all covers bonding wire, or interval covers bonding wire.
A manufacture method for coating bonding wire, in its manufacture method, the formation process of described insulating barrier is spraying or chemical vapour deposition (CVD).
By forming insulating barrier around metallic bond plying, short circuit problem between metal bonding silk and metallic bond plying and chip surface short circuit problem effectively can be solved, thus loop height when reducing bonding, and then improve packaging density and encapsulation rate of finished products.
Accompanying drawing explanation
Fig. 1 and Fig. 2 is coating bonding wire structural representation;
Fig. 3 is interval seal coat bonding wire structural representation;
In figure, 1 is bonding wire, and 2 is insulating barrier.
Embodiment
Below in conjunction with accompanying drawing, this product is described in detail.
As depicted in figs. 1 and 2, a kind of coating bonding wire, comprise bonding wire 1 and insulating barrier 2, described insulating barrier 2 covers the periphery of bonding wire 1, and the material of described insulating barrier 2 is terephthalic acid (TPA), polybutylene terephthalate, poly(4-methyl-1-pentene) or PAEK.
Described bonding wire 1 material is gold, aluminium, copper, silver or plating palladium copper.
Described insulating barrier 2 all covers bonding wire 1, or interval covers bonding wire 1, as shown in Figure 3.
A manufacture method for coating bonding wire, in its manufacture method, the formation process of described insulating barrier 2 is spraying or chemical vapour deposition (CVD).
As shown in Figure 3, L and D is equivalent or non-equivalence numerical value, and the interval of insulating barrier 2 covers can play fire-retardant effect.The material removed that burns at high temperature is needed for insulating barrier 2, in burning ball process, (temperature can reach the fusing point that is more than 1064 DEG C of bonding wire) can burn, after insulating barrier 2 is burned, generate volatile matter, thus bonding wire 1 is come out, it is spherical that bonding wire 1 melts formation, then carries out the bonding of the first solder joint.This interval covers the bonding wire 1 exposed can play the effect blocking combustion path in the process of insulating barrier 2 burning; thus available protecting does not firmly need the coating bonding wire removing insulating barrier 2, thus there is not the situation of short circuit when there is hank knotting, folded silk.
For needing the polymeric material insulating barrier 2 removed that burns in the case of a high temperature, terephthalic acid (TPA) burning-point is at 384 DEG C-421 DEG C, the part of burning insulating barrier 2 in ball process in bonding technology is burnt under high-temperature situation, generate volatile matter (carbon dioxide and water), discharge with equipment exhaust system.Polymer poly aryl ether ketone self possesses flame-retarding characteristic, can burn under bonding wire fusion temperature, but possesses flame-retarding characteristic because of self, so when temperature is lower than just stopping burning during burning-point.This insulating barrier 2 does not need to carry out interval Mulching treatment, effectively prevents the generation of short circuit between bonding wire 2.
As shown in Figure 3, L and D is equivalent or non-equivalence numerical value, and the interval of insulating barrier 2 covers can play fire-retardant effect.Insulating barrier 2 at high temperature be there is to the material volatilized, in bonding process, bonding wire 1 can form higher temperature that is more than 1000 DEG C in burning pommel, the heat decomposition temperature of the insulating barrier that PETG is formed is 353 DEG C, now insulating barrier 2 just can at high temperature occur to decompose and vapor away, expose interior metal bonding wire, facilitate bonding.And do not need the part vapored away to need to carry out cooling processing, to prevent from will the decomposed removed not needed to fall due to bonding wire heat conduction.
Claims (5)
1. a coating bonding wire, comprise bonding wire (1) and insulating barrier (2), described insulating barrier (2) covers the periphery of bonding wire (1), it is characterized in that: the material of described insulating barrier (2) is terephthalic acid (TPA), polybutylene terephthalate, poly(4-methyl-1-pentene) or PAEK.
2. a kind of coating bonding wire according to claim 1, is characterized in that: described bonding wire (1) material is gold, aluminium, copper, silver or plating palladium copper.
3. a kind of coating bonding wire according to claim 1, is characterized in that: described insulating barrier (2) all covers bonding wire (1), or interval covers bonding wire (1).
4. a kind of coating bonding wire according to claim 1, is characterized in that: described coating bonding wire forms metallurgical connection with aluminium, gold or nickel/gold solder dish by bonding.
5. a manufacture method for coating bonding wire, is characterized in that: in its manufacture method, and the formation process of described insulating barrier (2) is spraying or chemical vapour deposition (CVD).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510750110.4A CN105374782A (en) | 2015-11-05 | 2015-11-05 | Coating bonding wire and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510750110.4A CN105374782A (en) | 2015-11-05 | 2015-11-05 | Coating bonding wire and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105374782A true CN105374782A (en) | 2016-03-02 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510750110.4A Pending CN105374782A (en) | 2015-11-05 | 2015-11-05 | Coating bonding wire and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105374782A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115673007A (en) * | 2022-02-22 | 2023-02-03 | 深圳中宝新材科技有限公司 | Method for manufacturing insulating gold bonding wire for double-layer stacked packaging of integrated circuit |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60158637A (en) * | 1984-01-28 | 1985-08-20 | Nec Corp | Wire-bonding device |
| JPS63144530A (en) * | 1986-12-09 | 1988-06-16 | Fujitsu Ltd | Wire bonding device |
| EP0355955A2 (en) * | 1988-07-25 | 1990-02-28 | Hitachi, Ltd. | Connection for semiconductor devices or integrated circuits by coated wires and method of manufacturing the same |
| US5396104A (en) * | 1989-03-28 | 1995-03-07 | Nippon Steel Corporation | Resin coated bonding wire, method of manufacturing the same, and semiconductor device |
| CN1215214A (en) * | 1997-10-16 | 1999-04-28 | 日本电气株式会社 | Coated thin metal wire and method for making semiconductor device using same |
| CN101320718A (en) * | 2007-06-04 | 2008-12-10 | 三星电子株式会社 | Memory devices including separating insulating structures on wires and methods of forming |
| CN205194691U (en) * | 2015-11-05 | 2016-04-27 | 华天科技（西安）有限公司 | Coating bonding wire structure |
-
2015
- 2015-11-05 CN CN201510750110.4A patent/CN105374782A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60158637A (en) * | 1984-01-28 | 1985-08-20 | Nec Corp | Wire-bonding device |
| JPS63144530A (en) * | 1986-12-09 | 1988-06-16 | Fujitsu Ltd | Wire bonding device |
| EP0355955A2 (en) * | 1988-07-25 | 1990-02-28 | Hitachi, Ltd. | Connection for semiconductor devices or integrated circuits by coated wires and method of manufacturing the same |
| US5396104A (en) * | 1989-03-28 | 1995-03-07 | Nippon Steel Corporation | Resin coated bonding wire, method of manufacturing the same, and semiconductor device |
| CN1215214A (en) * | 1997-10-16 | 1999-04-28 | 日本电气株式会社 | Coated thin metal wire and method for making semiconductor device using same |
| CN101320718A (en) * | 2007-06-04 | 2008-12-10 | 三星电子株式会社 | Memory devices including separating insulating structures on wires and methods of forming |
| CN205194691U (en) * | 2015-11-05 | 2016-04-27 | 华天科技（西安）有限公司 | Coating bonding wire structure |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115673007A (en) * | 2022-02-22 | 2023-02-03 | 深圳中宝新材科技有限公司 | Method for manufacturing insulating gold bonding wire for double-layer stacked packaging of integrated circuit |
| CN115673007B (en) * | 2022-02-22 | 2023-04-18 | 深圳中宝新材科技有限公司 | Method for manufacturing insulating gold bonding wire for double-layer stacked packaging of integrated circuit |
| WO2023160730A1 (en) * | 2022-02-22 | 2023-08-31 | 深圳中宝新材科技有限公司 | Method for manufacturing insulated gold bonding wire for double-layer superposed packaging of integrated circuit |
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| PB01 | Publication | ||
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| WD01 | Invention patent application deemed withdrawn after publication | ||
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Application publication date: 20160302 |