JP2507794B2 - Wire bonding method - Google Patents

Wire bonding method

Info

Publication number
JP2507794B2
JP2507794B2 JP64000436A JP43689A JP2507794B2 JP 2507794 B2 JP2507794 B2 JP 2507794B2 JP 64000436 A JP64000436 A JP 64000436A JP 43689 A JP43689 A JP 43689A JP 2507794 B2 JP2507794 B2 JP 2507794B2
Authority
JP
Japan
Prior art keywords
bonding
wire
ball
welding tip
conductive wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP64000436A
Other languages
Japanese (ja)
Other versions
JPH02181455A (en
Inventor
東作 小島
敏 浦山
武 川名
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP64000436A priority Critical patent/JP2507794B2/en
Publication of JPH02181455A publication Critical patent/JPH02181455A/en
Application granted granted Critical
Publication of JP2507794B2 publication Critical patent/JP2507794B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/78268—Discharge electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H01L2224/78302—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/786—Means for supplying the connector to be connected in the bonding apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
    • H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/851—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector the connector being supplied to the parts to be connected in the bonding apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85238—Applying energy for connecting using electric resistance welding, i.e. ohmic heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、ワイヤボンディング方法に係り、とくに電
子部品の端子に接合するワイヤボンディングに好適なワ
イヤボンディング方法に関する。Description: TECHNICAL FIELD The present invention relates to a wire bonding method, and more particularly to a wire bonding method suitable for wire bonding to a terminal of an electronic component.

〔従来の技術〕[Conventional technology]

従来、半導体装置の回路板などの電極へ、ボンディン
グワイヤを接合する場合には、たとえば、溶接技術（19
83年３月号,23〜27頁）に記載のように、予め電極に半
田めっきを施しておき、その上へボンディングワイヤを
重ね、加熱したボンディングを押し当てて前記半田を融
解することにより、リフローソルダリング方法によって
接合するものが紹介されている。Conventionally, when bonding a bonding wire to an electrode such as a circuit board of a semiconductor device, for example, a welding technique (19
(March 1983 issue, pp. 23-27), the electrodes are preliminarily solder-plated, a bonding wire is placed on the electrodes, and heated bonding is pressed to melt the solder. What is joined by the reflow soldering method is introduced.

〔発明が解決しようとする課題〕[Problems to be Solved by the Invention]

上記従来技術は、導電体電極へボンディングワイヤを
接合する場合、高温に加熱されたボンディングチップに
は、電極面の半田が乗り移ったり、汚染物が付着したり
するため、適宜ボンディングチップを清掃する必要があ
り、連続的にボンディングすることができない問題があ
った。In the above prior art, when bonding a bonding wire to a conductor electrode, solder on the electrode surface may transfer to the bonding chip heated to a high temperature, or contaminants may adhere to the bonding chip. However, there is a problem that continuous bonding cannot be performed.

また、フレキシブルプリント配線板（FPC）などを使
用した場合には、ボンディングチップの熱により、FPC
の接着層が熱変形したりして、接合上の不都合が生ずる
という問題点があった。When a flexible printed wiring board (FPC) is used, the heat of the bonding chip causes FPC
There is a problem in that the adhesive layer of No. 1 is thermally deformed, which causes inconvenience in joining.

本発明は、上記した従来技術の問題点を改善して、接
合上の不都合がなく、導電体電極へボンディングワイヤ
を連続的に、且つ容易に接合することを可能とするワイ
ヤボンディング方法を提供することにある。The present invention provides a wire bonding method that solves the above-mentioned problems of the prior art and allows continuous and easy bonding of a bonding wire to a conductor electrode without inconvenience in bonding. Especially.

〔課題を解決するための手段〕[Means for solving the problem]

上記目的を達成するために本発明のワイヤボンディン
グ方法においては、導電ワイヤの先端を溶接チップの絶
縁されたスルーホール内に繰出し可能に挿入し、放電ト
ーチ手段もしくは酸水素トーチ手段のいずれか一方にて
導電ワイヤの端部にボールを形成し、該ボールを溶接チ
ップにより電子回路板の導電体電極に所定の圧力を加え
ながら最初に超音波振動を付加して変形させるとともに
該ボールの表面に生成したすべり線を導電体電極に押し
付け、導電体表面の酸化被覆を破壊して新生面を形成さ
せ、ついで超音波付加時の最終直前に溶接チップに瞬間
的に熱を印加し、該ボールと導電体電極との拡散接合を
行うものである。To achieve the above object, in the wire bonding method of the present invention, the tip of the conductive wire is inserted into the insulated through-hole of the welding tip so as to be able to be extended, and either the discharge torch means or the oxyhydrogen torch means is provided. To form a ball at the end of the conductive wire and apply a predetermined pressure to the conductor electrode of the electronic circuit board with a welding tip to deform it by applying ultrasonic vibration first and generate it on the surface of the ball The slip line is pressed against the conductor electrode, the oxide coating on the conductor surface is destroyed to form a new surface, and then heat is momentarily applied to the welding tip immediately before the final point when ultrasonic waves are applied to the ball and the conductor. Diffusion bonding with electrodes is performed.

また導電ワイヤの両端を連続的に接合するため、上記
ワイヤボンディングを導電ワイヤの両端について行うも
のである。Further, since both ends of the conductive wire are continuously joined, the wire bonding is performed on both ends of the conductive wire.

また溶接チップへの超音波振動および熱を印加する動
作回路の構成を簡単にするとともに誤動作を防止するた
め、溶接チップに超音波振動を付加したのち熱を印加す
るものである。Further, in order to simplify the configuration of the operation circuit for applying ultrasonic vibration and heat to the welding tip and prevent malfunction, the ultrasonic vibration is applied to the welding tip and then heat is applied.

また回路基板に加熱するのを省略するため、回路基板
を熱を加えられない材料および均一に加熱できないので
加熱できない材料にて構成されたものである。Further, since the heating of the circuit board is omitted, the circuit board is made of a material to which heat cannot be applied and a material which cannot be heated uniformly and therefore cannot be heated.

〔作用〕[Action]

上記方法による本発明のワイヤボンディング方法にお
いては、導電ワイヤの端部を溶接チップの絶縁されたス
ルーホール内へ繰り出し可能に挿入し、ボールを形成
し、ボールに所定の圧力を加えながら最初に超音波振動
を付加し、ボールを変形させ、ついで最終直前にヒータ
チップを加熱してボンディングを行なうので、ボンディ
ングチップが半田や汚染物により、汚染されるのを防止
することができ、これによってボンディングチップを清
掃する必要がなく、複数の導電ワイヤの端部を連続的に
ボンディングすることが可能となり、FPCなどのよう
に、接着層が熱変形したりして接合上の不都合を生ずる
ことが全くなく、確実にかつ容易に接合することができ
る。In the wire bonding method of the present invention according to the above method, the end of the conductive wire is removably inserted into the insulated through hole of the welding tip to form a ball, and the ball is formed first while applying a predetermined pressure to the ball. By applying sonic vibration, deforming the ball, and then heating the heater chip immediately before the final bonding, it is possible to prevent the bonding chip from being contaminated with solder or contaminants. It is possible to continuously bond the ends of multiple conductive wires without the need to clean, and there is no inconvenience in joining due to thermal deformation of the adhesive layer like FPC. It is possible to join reliably and easily.

〔実施例〕〔Example〕

以下、本発明の一実施例であるワイヤボンディング装
置を示す第１図乃至第８図について説明する。1 to 8 showing a wire bonding apparatus according to an embodiment of the present invention will be described below.

第１図は本発明の一実施例であるワイヤボンディング
装置の要部を示す斜視図である。FIG. 1 is a perspective view showing a main part of a wire bonding apparatus which is an embodiment of the present invention.

第１図において、30はアーク電源、40はアーク電源30
に接続された、放電トーチ、20はそのスルーホール22内
に導電ワイヤ１を繰出し可能に挿入することができる溶
接チップであって、この溶接チップ20は超音波発振器
（図示せず）の超音波ホーン60の先端に絶縁部材61を押
し込み、加圧バネ（図示せず）などにより、導電体チッ
プホルダー21に押し当てて、接触させ、超音波が付加で
きるようになっている。溶接チップ20は導電体チップホ
ルダー21に取りつけられている。この導電体チップホル
ダー21、21′は溶接チップ21への給電導体を兼ねてい
て、往復２本に分割してその間に絶縁材23をはさみ、こ
の絶縁材23によって絶縁されている。なお、これら往復
導体21、21′はそれぞれ溶接電極51、53に取りつけられ
ている。これら溶接電極51、53も往復２本に分割してそ
の間に絶縁材52をはさみ、この絶縁材52によって絶縁さ
れている。なお、超音波ホーン60は、絶縁体62を介して
溶接電極51、53に取りつけられている。56は溶接電源に
して、XYテーブル70上に載置固定された昇降機構55に取
りつけられている。この昇降機構55は、前記溶接チップ
20を上下動させるとともに前記XYテーブル70によって溶
接チップ20をXY両面内で移動させ、これにより溶接チッ
プ20に形成されたスルーホール25で導電ワイヤ１の先端
を保持するとともに放電トーチ40によって形成されたボ
ール２を所定位置に位置決めする。In FIG. 1, 30 is an arc power source, 40 is an arc power source 30.
, A welding torch 20 is a welding tip capable of inserting the conductive wire 1 into the through hole 22 so as to be able to be drawn out, and the welding tip 20 is an ultrasonic wave of an ultrasonic oscillator (not shown). The insulating member 61 is pushed into the tip of the horn 60, and is pressed against the conductor chip holder 21 with a pressure spring (not shown) or the like so that the conductor chip holder 21 is brought into contact therewith, and ultrasonic waves can be added. The welding tip 20 is attached to the conductor tip holder 21. The conductor tip holders 21 and 21 'also serve as power supply conductors to the welding tip 21, are divided into two reciprocating pieces, and an insulating material 23 is sandwiched between them to be insulated by the insulating material 23. The reciprocating conductors 21 and 21 'are attached to the welding electrodes 51 and 53, respectively. These welding electrodes 51 and 53 are also divided into two reciprocating parts, and an insulating material 52 is sandwiched between them to be insulated by the insulating material 52. The ultrasonic horn 60 is attached to the welding electrodes 51 and 53 via an insulator 62. A welding power source 56 is attached to an elevating mechanism 55 mounted and fixed on the XY table 70. The lifting mechanism 55 is the welding tip.
When the XY table 70 moves the welding tip 20 up and down, the welding tip 20 is moved on both sides of the XY, thereby holding the tip of the conductive wire 1 in the through hole 25 formed in the welding tip 20 and forming the discharge torch 40. The ball 2 is positioned at a predetermined position.

80は、導電ワイヤ１が巻回されている巻線支持部、こ
のように巻回された導電ワイヤ１は、巻線支持部80から
逐次繰り出されて、途中に設けられたワイヤ供給ローラ
35を経て、曲面形成された電極端子26に導びき、チャッ
ク31を通して、溶接チップ20へ至るようになっている。Reference numeral 80 denotes a winding support part around which the conductive wire 1 is wound, and the conductive wire 1 wound in this way is sequentially fed out from the winding support part 80, and a wire supply roller provided midway
After passing through 35, it is led to the curved electrode terminal 26, passes through the chuck 31, and reaches the welding tip 20.

第２図は、本発明の溶接チップ20の拡大斜視図であ
る。溶接チップ20にはスルーホール25があいており、導
電ワイヤ１が繰出し可能になっている溶接チップ20は導
電体チップホルダー21、21′にネジ24により取りつけら
れ、導電体チップホルダー21、21′と往復２本に分割し
ていて、その間に絶縁材23をはさみ、電体チップホルダ
ー21、21′間を絶縁している。FIG. 2 is an enlarged perspective view of the welding tip 20 of the present invention. The welding tip 20 has a through hole 25 so that the conductive wire 1 can be fed out. The welding tip 20 is attached to the conductive tip holders 21 and 21 'by screws 24, and the conductive tip holders 21 and 21' are attached. And the insulating material 23 is sandwiched between them to insulate between the electric chip holders 21 and 21 '.

溶接チップ20はタングステンやモリブデン等の発熱体
であり、一方の導電チップホルダー21もしくは21′から
他方の導体チップホルダー21′もしくは21へ通電するこ
とにより、発熱体先端に抵抗熱を発生させ、熱圧着時の
熱源とする。The welding tip 20 is a heating element such as tungsten or molybdenum, and when one conductive tip holder 21 or 21 'is energized to the other conductive tip holder 21' or 21, resistance heat is generated at the tip of the heating element to generate heat. Use as a heat source during crimping.

つぎにボンディングするさいの条件について第３図乃
至第５図により説明する。Next, the conditions for bonding will be described with reference to FIGS.

第３図（ａ）（ｂ）は、第１ボンディング前および第
１ボンディング後の導電ワイヤの断面形状を示す。3A and 3B show cross-sectional shapes of the conductive wire before the first bonding and after the first bonding.

第４図（ａ）（ｂ）は、第２ボンディング前および第
２ボンディング後の導電ワイヤの断面形状を示す。4A and 4B show cross-sectional shapes of the conductive wire before the second bonding and after the second bonding.

第５図はボンディング条件を示すグラフである。な
お、第１ボンディングおよび第２ボンディングは同一接
合原理であるからボンディング条件も同一である。FIG. 5 is a graph showing bonding conditions. Since the first bonding and the second bonding have the same bonding principle, the bonding conditions are also the same.

第３図（ａ）および第４図（ａ）に示すように、溶接
チップ20のスルーホール25には、絶縁内壁22が固定さ
れ、この絶縁内壁22内に導電ワイヤ１が挿入されている
ので、絶縁チップ20は導電ワイヤ１と絶縁されている。
またこの導電ワイヤ１は導電材たとえば直径20〜100μ
ｍの金、アルミニウム、銅などの線材にて形成されてい
る。As shown in FIGS. 3A and 4A, the insulating inner wall 22 is fixed to the through hole 25 of the welding tip 20, and the conductive wire 1 is inserted into the insulating inner wall 22. The insulating tip 20 is insulated from the conductive wire 1.
The conductive wire 1 is made of a conductive material, for example, a diameter of 20 to 100 μ.
It is formed of a wire rod made of gold, aluminum, copper or the like.

このように構成された導電ワイヤ１の先端のボール２
に所定の圧力を加えながら、第５図に示すように、最初
に超音波振動を付加して第３図（ｂ）および第４図
（ｂ）に示すようにボール２を圧着させる。The ball 2 at the tip of the conductive wire 1 thus configured
As shown in FIG. 5, ultrasonic vibration is first applied to the ball 2 while applying a predetermined pressure to the ball 2 as shown in FIGS. 3 (b) and 4 (b).

このとき、ボール２の表面に生成したすべり線が導電
体電極５、15に押しつけられ、導電体電極５、15の表面
の酸化膜が破壊されて新生面が生成される。At this time, the slip line generated on the surface of the ball 2 is pressed against the conductor electrodes 5 and 15, the oxide film on the surface of the conductor electrodes 5 and 15 is destroyed, and a new surface is generated.

ついで第５図に示すように、超音波付加時の最終直前
に溶接チップ20は、導体チップホルダー21、21′に通電
することによって発熱体先端に抵抗熱を発生して瞬間的
に拡散接合を行うと、ボール２が第１ボンディングパッ
ト５および第２ボンディングパット15に接合され、この
ときの超音波エネルギをＳとし、超音波をかける時間を
T1としT1時間の最終段の溶接チップ20の加熱温度をＨと
し、加熱時間をT2とする。Then, as shown in FIG. 5, the welding tip 20 generates resistance heat at the tip of the heating element by energizing the conductor tip holders 21 and 21 'immediately before the end of the ultrasonic wave application to instantaneously perform diffusion bonding. Then, the ball 2 is bonded to the first bonding pad 5 and the second bonding pad 15, and the ultrasonic energy at this time is S, and the time for applying the ultrasonic wave is
The heating temperature of the welding tip 20 of the final stage of T 1 and then T 1 times and H, the heating time and T 2.

また、本願発明の他の一実施例として超音波を付加し
たのち、瞬間的に熱を印加してボンディングする場合に
おいても接合には同等の効果が得られる。Further, as another embodiment of the present invention, even when ultrasonic waves are applied and then heat is instantaneously applied for bonding, the same effect can be obtained for bonding.

而して、この場合には超音波の付加と熱の印加とがそ
れぞれ別個に行うので、動作回路構成が簡単になり、か
つ誤動作を防止することができる。In this case, the application of ultrasonic waves and the application of heat are performed separately, so that the operation circuit configuration is simplified and malfunctions can be prevented.

つぎにワイヤボンディング方法について第６図により
説明する。Next, the wire bonding method will be described with reference to FIG.

第６図はボンディング工程の全体を示す説明図であ
る。FIG. 6 is an explanatory view showing the whole bonding process.

第６図（ａ）に示すように、導電性ワイヤ１の先端は
第２ボンディングでプルカットされて第１ボンディング
パット５の上方位置まで移動する。As shown in FIG. 6A, the tip of the conductive wire 1 is pull-cut by the second bonding and moved to a position above the first bonding pad 5.

ついで、第６図（ｂ）に示すように、導電性ワイヤ１
の先端は、放電トーチ40によりボール２が形成される。Then, as shown in FIG. 6 (b), the conductive wire 1
The ball 2 is formed by the discharge torch 40 at the tip of the ball.

ついで第６図（ｃ）に示すように、ボール２がボール
圧着部３となって第１ボンディングパット５に接合され
る。Then, as shown in FIG. 6C, the ball 2 becomes the ball pressure bonding portion 3 and is bonded to the first bonding pad 5.

ついで、第６図（ｄ）に示すように溶接チップ20が第
１ボンディングパット５の上部まで立上がる。Then, the welding tip 20 rises up to the upper part of the first bonding pad 5 as shown in FIG. 6 (d).

ついで導電ワイヤ１が巻線支持部60より繰り出されな
がら溶接チップ２が第６図（ｅ）に示すように第２ボン
ディングパット15の上部まで移動すると、溶接チップ２
が下降し、導電ワイヤ１がリード部14の第２ボンディン
グパット15上に接合される。Then, when the welding tip 2 moves to the upper part of the second bonding pad 15 as shown in FIG. 6 (e) while the conductive wire 1 is being fed out from the winding support portion 60, the welding tip 2
Is lowered, and the conductive wire 1 is bonded onto the second bonding pad 15 of the lead portion 14.

ついで、導電ワイヤ１に引張力が加わり、ウエッジ部
（第６図（ｅ）の溶接チップの下面）の端が切れると、
第１のボディングパット５と第２のボンディングパット
15とが導電ワイヤ１で配線されるとともにウエッジ部か
ら切れた導電ワイヤ１は第６図（ａ）に示す状態になる
ので、以下上記作用を繰返すことにより、連続的にボン
ディングを行うことができる。Then, when a tensile force is applied to the conductive wire 1 and the end of the wedge portion (the lower surface of the welding tip in FIG. 6 (e)) is cut off,
First bonding pad 5 and second bonding pad
Since 15 and 15 are wired by the conductive wire 1 and the conductive wire 1 cut from the wedge portion is in the state shown in FIG. 6 (a), the bonding can be continuously performed by repeating the above operation. .

したがって、本発明によるボンディングでは、ボンデ
ィングチップが半田や汚染物により汚染されることがな
い。そのためボンディングチップを清掃する必要がな
く、かつ導電ワイヤの両端部をボンディングする場合、
連続的に行うことができる。Therefore, in the bonding according to the present invention, the bonding chip is not contaminated with solder or contaminants. Therefore, it is not necessary to clean the bonding tip, and when bonding both ends of the conductive wire,
It can be performed continuously.

また熱容量が大きく基板を加熱できないセラミック積
層板18や同様に加熱できないFPC18′などのようなプリ
ント基板にも接合上の不都合を生ずることがない。In addition, the printed circuit board such as the ceramic laminate 18 which has a large heat capacity and cannot heat the substrate or the FPC 18 'which cannot be heated similarly does not cause any inconvenience in joining.

第７図は本発明の他の一実施例であるボール形成方法
の酸水素トーチ41によってボール２を形成する方法を示
す図である。FIG. 7 is a diagram showing a method of forming the ball 2 by the oxyhydrogen torch 41 of the ball forming method according to another embodiment of the present invention.

なお、放電トーチ40でボールを形成する際は、金線の
場合は、空気中で良いが、周知のように、銅線やアルミ
ニウム線では、酸化しやすいため、不活性雰囲気又は還
元性雰囲気が望ましいものはもちろんである。When forming a ball with the discharge torch 40, a gold wire may be used in the air, but as is well known, a copper wire or an aluminum wire is easily oxidized, so that an inert atmosphere or a reducing atmosphere is required. Of course what is desirable.

本実施例によれば、放電を不要にしてワイヤボンディ
ングを容易に行うことができる。According to the present embodiment, it is possible to easily perform wire bonding without requiring discharge.

〔発明の効果〕〔The invention's effect〕

以上説明したように本発明によれば、ボンディングチ
ップが半田や汚染物により、汚染することがないので、
ボンディングチップを清掃する必要がなく、連続的にボ
ンディングすることができる。またボンディングチップ
側から、超音波や抵抗熱を与えることができるので、熱
容量が大きく基板を加熱することが困難なセラミック積
層基板または磁気ヘッドや同様に加熱ができないFPC等
のようなプリント基板にも、接合上の不都合を生ずるこ
とはなく、ボンディングすることができる。As described above, according to the present invention, since the bonding chip is not contaminated by solder or contaminants,
It is possible to bond continuously without the need to clean the bonding tip. Also, since ultrasonic waves and resistance heat can be applied from the bonding chip side, it can be applied to printed circuit boards such as ceramic laminated boards or magnetic heads that have large heat capacity and it is difficult to heat the boards, or FPCs that cannot be similarly heated. The bonding can be performed without causing any inconvenience in bonding.

【図面の簡単な説明】[Brief description of drawings]

第１図は、本発明の一実施例であるワイヤボンディング
装置の要部を示す斜視図、第２図は、第１図に示す溶接
チップの拡大斜視図、第３図（ａ）（ｂ）は、本発明に
よる第１ボンディング前および第１ボンディング後の導
電ワイヤの断面形状を示す図、第４図（ａ）（ｂ）は、
第２ボンディング前および第２ボンディング後の導電ワ
イヤの断面形状を示す図、第５図は、ボンディング条件
を示すグラフ、第６図は、本発明によるボンディング工
程を示す説明図、第７図は、本発明の他の一実施例であ
る酸水素トーチを示す図である。 １……導電ワイヤ、２……ボール、５……第１ボンディ
ングパット、15……第２ボンディングパット、20……溶
接チップ、25……スルーホール、26……電極端子、40…
…放電トーチ、55……昇降機構、56……溶接電源、60…
…超音波ホーン、70……XYテーブル、80……巻線支持
部。FIG. 1 is a perspective view showing a main part of a wire bonding apparatus according to an embodiment of the present invention, FIG. 2 is an enlarged perspective view of a welding tip shown in FIG. 1, and FIGS. 3 (a) and 3 (b). FIGS. 4 (a) and 4 (b) show cross-sectional shapes of the conductive wire before and after the first bonding according to the present invention, and FIGS.
FIG. 5 is a diagram showing a cross-sectional shape of the conductive wire before and after the second bonding, FIG. 5 is a graph showing bonding conditions, FIG. 6 is an explanatory diagram showing a bonding step according to the present invention, and FIG. It is a figure which shows the oxyhydrogen torch which is another Example of this invention. 1 ... Conductive wire, 2 ... Ball, 5 ... First bonding pad, 15 ... Second bonding pad, 20 ... Welding tip, 25 ... Through hole, 26 ... Electrode terminal, 40 ...
… Discharge torch, 55… Lifting mechanism, 56… Welding power supply, 60…
… Ultrasonic horn, 70 …… XY table, 80 …… Winding support.

Claims (4)

(57)【特許請求の範囲】(57) [Claims] 【請求項１】電子回路板の導電体電極にボンディングワ
イヤを接合するワイヤボンディング方法において、導電
ワイヤの端部を溶接チップの絶縁されたスルーホール内
に繰出し可能に挿入し、放電トーチ手段もしくは酸水素
トーチ手段のいずれか一方にて導電ワイヤの端部にボー
ルを形成し、該ボールを溶接チップにより導電体電極に
所定の圧力を加えながら、最初に超音波振動を付加して
変形させるとともに該ボールの表面に生成したすべり線
を導電体電極に押し付け、導電体電極の表面の酸化被覆
を破壊して新生面を形成させ、ついで超音波付加時の最
終直前に溶接チップに瞬間的に熱を印加し、該ボールと
導電体電極との拡散接合を行うワイヤボンディング方
法。1. A wire bonding method for bonding a bonding wire to a conductor electrode of an electronic circuit board, wherein the end of the conductive wire is removably inserted into an insulated through hole of a welding tip, and a discharge torch means or an acid is used. A ball is formed at the end of the conductive wire by either one of the hydrogen torch means, and while applying a predetermined pressure to the conductor electrode with a welding tip, the ball is first deformed by applying ultrasonic vibration. The slip line generated on the surface of the ball is pressed against the conductor electrode, the oxide coating on the surface of the conductor electrode is destroyed to form a new surface, and then heat is momentarily applied to the welding tip immediately before the end of ultrasonic wave application. Then, a wire bonding method for performing diffusion bonding between the ball and the conductor electrode. 【請求項２】請求項１記載のワイヤボンディングにより
導電ワイヤの両端を導電体電極に接合するワイヤボンデ
ィング方法。2. A wire bonding method for bonding both ends of a conductive wire to a conductor electrode by the wire bonding according to claim 1. 【請求項３】請求項１もしくは２記載の溶接チップに超
音波振動を付加したのち熱を印加するワイヤボンディン
グ方法。3. A wire bonding method in which ultrasonic vibration is applied to the welding tip according to claim 1 or 2 and then heat is applied. 【請求項４】請求項１記載の電子回路基板を熱を加えら
れない材料および均一に熱を加えられないため加熱がで
きない材料にて構成されたワイヤボンディング方法。4. A wire bonding method, wherein the electronic circuit board according to claim 1 is made of a material that cannot be heated or a material that cannot be heated because it cannot be uniformly heated.
JP64000436A 1989-01-06 1989-01-06 Wire bonding method Expired - Lifetime JP2507794B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP64000436A JP2507794B2 (en) 1989-01-06 1989-01-06 Wire bonding method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP64000436A JP2507794B2 (en) 1989-01-06 1989-01-06 Wire bonding method

Publications (2)

Publication Number Publication Date
JPH02181455A JPH02181455A (en) 1990-07-16
JP2507794B2 true JP2507794B2 (en) 1996-06-19

Family

ID=11473758

Family Applications (1)

Application Number Title Priority Date Filing Date
JP64000436A Expired - Lifetime JP2507794B2 (en) 1989-01-06 1989-01-06 Wire bonding method

Country Status (1)

Country Link
JP (1) JP2507794B2 (en)

Also Published As

Publication number Publication date
JPH02181455A (en) 1990-07-16

Similar Documents

Publication Publication Date Title
US5298715A (en) Lasersonic soldering of fine insulated wires to heat-sensitive substrates
US3256465A (en) Semiconductor device assembly with true metallurgical bonds
JP5794577B2 (en) Heater chip, joining device, joining method, and conductor thin wire and terminal connection structure
JPH05283474A (en) Forming method of semiconductor chip package and chip-bonding tape for the method
CN101072654A (en) Ultrasonic agitation of solder during reflow
JP4988607B2 (en) Heater chip, bonding apparatus, and bonding method
JPH07506919A (en) How to make radio frequency detection labels with minimum number of electrical components
US5357084A (en) Device for electrically interconnecting contact arrays
TWI528478B (en) Wire bonding device
JP2017062945A (en) Heater chip, joining device and joining method
JP2507794B2 (en) Wire bonding method
US3519778A (en) Method and apparatus for joining electrical conductors
JP2009160617A (en) Heater tip and joining device
JP3728918B2 (en) Substrate, substrate manufacturing method and projection manufacturing apparatus
US3444347A (en) Method for solder reflow connection of insulated conductors
JPH04212277A (en) Method of connecting terminal to printed wiring board
JPH08340176A (en) Connecting method of lead wire
JP2017224641A (en) Resistor and heater
JPS62140428A (en) Wire bonding method
JP2001244040A (en) Connecting method of resin coated wire such as magnetic wire to land or pad provided on glass epoxy board and electric circuit, etc.
JPS63208236A (en) Bonding method for wire with insulating coating
JP2905610B2 (en) How to connect terminals to printed wiring boards
JPH06350241A (en) Soldering method and soldering equipment
JPH09148377A (en) Manufacturing method of electronic element and solder block
JPH0590355A (en) Method and apparatus for wire bonding