JP3728918B2 - Substrate, substrate manufacturing method and projection manufacturing apparatus - Google Patents

Substrate, substrate manufacturing method and projection manufacturing apparatus Download PDF

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Publication number
JP3728918B2
JP3728918B2 JP07814698A JP7814698A JP3728918B2 JP 3728918 B2 JP3728918 B2 JP 3728918B2 JP 07814698 A JP07814698 A JP 07814698A JP 7814698 A JP7814698 A JP 7814698A JP 3728918 B2 JP3728918 B2 JP 3728918B2
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Japan
Prior art keywords
substrate
metal wire
capillary
wiring terminal
tip
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Expired - Fee Related
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JP07814698A
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Japanese (ja)
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JPH11274354A (en
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英一 佐藤
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Seiko Epson Corp
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Seiko Epson Corp
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Description

【0001】
【発明の属する技術分野】
本発明は、基板、基板の製造方法及び突起製造装置に関する。
【0002】
【従来の技術】
電子機器が小型化、軽量化、多機能化されるのに伴い、それに使用する電子部品も同様に、小型化、軽量化、多機能化されてきている。そのために、BGA(Ball Grid Arrei)パッケージや、フリップチップ接合を用いた半導体装置等の高密度実装技術が開発されている。
【0003】
BGAパッケージは、プリント配線基板や、窒化アルミニウム等の高熱伝導性セラミックス更には、ポリイミド樹脂等の高耐熱樹脂等を用いた、配線基板やパッケージ基材の入出力部分に、半田ボールや、はんだメッキを施した銅ボール等で形成されたバンブを配置し、これを溶融してパッケージの入出力部を配線基板の端子に接続することを特徴とするものである。
【0004】
上記のような技術の出現により、QFP(Quad Flat Package)を用いてプリント配線基板に接続するのに比較して、小型化が可能となっている。
【0005】
【発明が解決しようとする課題】
ところが、プリント配線基板や、窒化アルミニウム等の高熱伝導性セラミックス更には、ポリイミド樹脂等の高耐熱樹脂等を用いた、配線基板やパッケージ基材の入出力部分に、半田ボールや半田メッキを施した銅ボール等の導電性ボールを配置する技術として、特開平9−223712号公報の「従来の技術」欄で述べられているごとく、搭載ヘッドで多数個の導電性ボールをピックアップし、次いでこの搭載ヘッドをワークの上方へ移動させ、そこで上下移動を行わせて、多数個の導電性ボールをワークの電極に一括して搭載する方法、が知られているが、この特開平9−223712号公報の、「発明が解決しようとする課題」欄で述べられたごとく、導電性ボールの供給部において搭載ヘッドに上下動さを行わせても、すべての吸着孔に導電性ボールを真空吸着してピックアップできるとは限らず、導電性ボールの欠落を生じやすい、という課題があった。
【0006】
そこで本発明はこのような課題を解決するためになされたものであり、基板の入出力部の接続部に、導電性ボールの欠落を生じさせることなく容易に突起部を配置可能な基板の製造方法及びこの方法によって製造された基板を提供することを目的とする。
【0007】
また、入出力部の接続部に、導電性ボールの欠落を生じさせることなく容易に突起部を形成することのできる突起製造装置を提供することを目的とする。
【0008】
【課題を解決するための手段】
請求項1の基板の製造方法は、基板の一方の面側から他方の面側に貫通する貫通孔と、基板の一方の面に形成された配線端子とを有する基板の貫通孔に、金属線の一端を、前記基板の一方の面側より挿入して前記基板の他方の面側に突出させ、その金属線の先端部にボールを形成する工程と、該金属線のうち前記基板の一方の面側の所定部分を基板の一方の面に形成された配線端子に接続する工程と、余剰金属線を切断除去する工程と、をこの順序で有することを特徴とする。
【0009】
請求項2の基板の製造方法は、少なくとも一方の面に配線端子を有する基板の一方の面から他方の面に貫通する貫通孔を形成する工程と、キャピラリの先端に挿通された金属線の先端を、基板の一方の面側から貫通孔に挿入して前記他方の面側に突出させる工程と、前記金属線の先端部にボールを形成する工程と、前記キャピラリを上昇させる工程と、前記キャピラリを基板の一方の面に配置される配線端子上に移動する工程と、前記キャピラリを下降させ、該配線端子に金属線を押圧接合する工程と、前記金属線の余剰金属線を切り離す工程と、をこの順序で有することを特徴とする。
【0010】
請求項3の基板の製造方法は、少なくとも一方の面に複数の配線端子を有し、かつ基板の一方の面から他方の面に貫通する複数の貫通孔が形成された基板において、金属線の一端を前記基板の一方の面側より該貫通穴に挿入して前記基板の他方の面側に突出させ、その金属線の先端部にボールを形成する工程と、該金属線のうち前記基板の一方の面側の所定部分を基板の一方の面に形成された配線端子に電気的に接続する工程と、余剰金属線を切断除去する工程と、をこの順序で複数回繰り返すことを特徴とする。
【0011】
請求項4の基板の製造方法は、少なくとも一方の面に複数の配線端子を有し、かつ基板の一方の面から他方の面に貫通する複数の貫通孔が形成された基板において、キャピラリの先端に挿通された金属線の先端を、基板の一方の面側から貫通孔に挿入して前記他方の面側に突出させる工程と、前記金属線の先端部にボールを形成する工程と、前記キャピラリを上昇させる工程と、前記キャピラリを基板の一方の面に配置される配線端子上に移動する工程と、前記キャピラリを下降させ、該配線端子に金属線を押圧接合する工程と、前記金属線の余剰金属線を切り離す工程と、をこの順序で複数回繰り返すことを特徴とする。
【0012】
請求項5の基板の製造方法は、請求項1乃至請求項4のいずれかに記載の基板の製造方法において、金属線の先端部を溶融して前記ボールを形成することを特徴とする。
【0013】
請求項1又は請求項2の基板の製造方法に用いられる少なくとも基板の一方に配線パターンを有する基板の基板材料としては、ガラスエポキシ基板、石英ガラス、ホウケイ酸ガラス、表面をシリカシートしたソーダライムガラス、等の無機ガラス類、有機プラスチックのフイルムまたはシート、アルミナ、炭化珪素等のセラミックス類、シリコン基板等が好ましく用いられる。
【0014】
基板は、まず、ドリル等の切削手段、研削、プレスによるパンチング等の機械的手段、レーザ加工、あるいは、異方性エッチング法、プラズマエッチング等の穿孔手段を用いて基板の一方の面から、他方の面に貫通する貫通孔を穿孔する。貫通孔の直径は15μmから450μm、望ましくは30μmから120μmであり、後に説明する工程で用いる金属線の直径より大きくさらに、形成するボール直径より小さい直径であり、用いる金属線の直径の2倍以内であることが好ましい。
【0015】
次に、金属線の一端を上記基板の一方の面側から貫通穴に挿通して、基板の他方の面側に突出させる。
【0016】
金属線は、金、銅等の金属や、金を含む合金、銅を含む合金、さらには鉛錫、銀錫などの合金からなる材料が用いられる。金属線の直径は、8μmから400μm、望ましくは15μmから125μmが好ましい。
【0017】
金属線は、キャピラリに挿通し、キャピラリに挿通された金属線の先端は、キャピラリ先端部より突出した状態で、金属線の一端を基板の一方の面より貫通孔内を通過し、他方の面に突出させる。
【0018】
次に、他方の面に突出させた金属線の先端部を、電気トーチ、水素ガストーチ、水素ガスを含むガストーチなどのトーチにより溶融することで、金属線の先端にボールを形成する。
【0019】
形成するボールの直径は、金属線直径の2倍から3.8倍であるが、2.3倍から3.2倍であることがが好ましい。形成するボールの直径を2.3倍から3.2倍の直径とすることで、安定したボール直径を得ることが可能となり、さらに変形の少ないボール形成が容易に行える。
【0020】
ボール形成を行った後、次の工程として、金属線のうち基板の一方の面側の所定部分を基板の一方の面に形成された配線端子に電気的に接続する。
【0021】
形成されたボールは、キャピラリを上昇させることで、基板方向に引き付けられるが、ボール直径が、基板を貫通する貫通穴の直径よりも大きく形成されるために、穴部周囲に接触した状態となる。さらに、キャピラリを上昇し、次にキャピラリを基板の一方の面に配置される配線端子上に移動する。次にキャピラリを配線端子方向に移動し近接させて、金属線と配線端子を接触させ、さらに、キャピラリを押圧して、金属線と、配線端子を電気的に接続する。この時キャピラリに超音波振動を付与することにより、金属線と配線端子との接続強度を増加させることができる。
【0022】
また、キャピラリを加熱して、金属線に伝熱することで、金属線を加熱し接続を行うことにより、金属線と配線端子との接続部強度を増加することも可能である。さらに、超音波と金属線加熱とを併用しても同様な効果を得ることができる。さらに併せて、接続時に基板が加熱されていれば、さらに金属線と配線端子の接続強度を確保し、接続時間を短縮するために効果的である。
【0023】
金属線と、配線端子の接続を行った後、次の工程として、キャピラリ側に残る余剰金属線を、接続部とキャピラリとの間で切断除去することで、基板の一方の面の配線端子と接続され、基板の他方の面に突出するボールを形成することができる。
【0024】
さらにこの工程を、複数回繰り返すことによって、突起電極を形成した本発明の基板は作成される。
【0025】
請求項3又は請求項4の基板の製造方法に用いられる少なくとも一方の面に複数の配線端子を有する基板の基板材料としては、ガラスエポキシ基板、石英ガラス、ホウケイ酸ガラス、表面をシリカシートしたソーダライムガラス、等の無機ガラス類、有機プラスチックのフイルムまたはシート、アルミナ、炭化珪素等のセラミックス類、シリコン基板等が好ましく用いられる。
【0026】
基板は、ドリル等の切削手段、研削、プレスによるパンチング等の機械的手段、レーザ加工、あるいは、異方性エッチング法、プラズマエッチング等の穿孔手段を用いて少なくとも基板の入出力部の接続部に対応する位置に、基板の一方の面から、他方の面に貫通する貫通孔を穿孔される。貫通孔の直径は15μmから450μm、望ましくは30μmから120μmであり、後に説明する工程で用いる金属線の直径より大きくさらに、形成するボール直径より小さい直径であり、用いる金属線の直径の2倍以内であることが好ましい。
【0027】
上記のごとき基板を用いて、まず金属線の一端を基板の一方の面側から貫通穴に挿通して、基板の他方の面側に突出させる。
【0028】
金属線は、金、銅等の金属や、金を含む合金、銅を含む合金、さらには鉛錫、銀錫などの合金からなる材料が用いられる。金属線の直径は、8μmから400μm、望ましくは15μmから125μmが好ましい。
【0029】
金属線は、キャピラリに挿通し、キャピラリに挿通された金属線の先端は、キャピラリ先端部より突出した状態で、金属線の一端を基板の一方の面より貫通孔内を通過し、他方の面に突出させる。
【0030】
次に、他方の面に突出させた金属線の先端部を、電気トーチ、水素ガストーチ、水素ガスを含むガストーチなどのトーチにより溶融することで、金属線の先端にボールを形成する。
【0031】
形成するボールの直径は、金属線直径の2倍から3.8倍であるが、2.3倍から3.2倍であることがが好ましい。形成するボールの直径を2.3倍から3.2倍の直径とすることで、安定したボール直径を得ることが可能となり、さらに変形の少ないボール形成が容易に行える。
【0032】
ボール形成を行った後、次の工程として、金属線のうち基板の一方の面側の所定部分を基板の一方の面に形成された配線端子に電気的に接続する。
【0033】
形成されたボールは、キャピラリを上昇させることで、基板方向に引き付けられるが、ボール直径が、基板を貫通する貫通穴の直径よりも大きく形成されるために、穴部周囲に接触した状態となる。さらに、キャピラリを上昇し、次にキャピラリを基板の一方の面に配置される配線端子上に移動する。次にキャピラリを配線端子方向に移動し近接させて、金属線と配線端子を接触させ、さらに、キャピラリを押圧して、金属線と、配線端子を電気的に接続する。この時キャピラリに超音波振動を付与することにより、金属線と配線端子との接続強度を増加させることができる。
【0034】
また、キャピラリを加熱して、金属線に伝熱することで、金属線を加熱し接続を行うことにより、金属線と配線端子との接続部強度を増加することも可能である。さらに、超音波と金属線加熱とを併用しても同様な効果を得ることができる。さらに併せて、接続時に基板が加熱されていれば、さらに金属線と配線端子の接続強度を確保し、接続時間を短縮するために効果的である。
【0035】
金属線と、配線端子の接続を行った後、次の工程として、キャピラリ側に残る余剰金属線を接続部と、キャピラリ間で切断除去することで、基板の一方の面の配線端子と接続された、基板の他方の面に突出するボールを形成することができる。
【0036】
さらにこの工程を、複数回繰り返すことによって、突起電極を形成した本発明の基板は作成される。
【0037】
請求項6の基板は、請求項1乃至請求項5のいずれかに記載の基板の製造方法を用いて製造され、前記金属線の先端に球形のボールを有し、前記貫通孔からキャピラリ方向に引き伸ばされ、前記配線端子に弧を描いて前記金属線が接続されていることを特徴とする
【0038】
基板に複数個の貫通穴を配置し、貫通穴の全部もしくは選択的に請求項1乃至請求項5のいずれかに記載の基板製造方法の実施による、基板に突出したボールを有する基板が形成される。
【0039】
上記基板の製造方法及びこの方法によって製造された基板は、導電性ボールの欠落を生じさせることなく容易に突起部を形成することのできるとともに、ボール吸着ボール配置等の設備に比較して、安価に設備化が可能であり、さらにボールの欠落検査を行わなくても良いという利点と、さらには信頼性の高い基板を提供することができる。
【0040】
請求項7の突起製造装置は、基板を載置する基板載置台と、前記基板載置台の基板載置位置の一方の面側にキャピラリが配置され、さらに基板載置位置の他方の面側にトーチが配置され、
前記キャピラリは上下方向に揺動可能に支持されてなる突起製造装置であって、
前記キャピラリが保持する金属線を、前記基板の貫通孔に挿入し、前記基板から突出させた前記金属線の先端に前記トーチによりボールを形成し、
前記キャピラリを、上昇させ、前記基板上に設けられた配線端子上に移動し、
前記キャピラリを下降させ、前記配線端子に前記金属線を押圧接合することを特徴とする。
【0041】
突起製造装置は、基板載置位置の一方の面側にキャピラリが配置され、さらに基板載置位置の他方の面側にトーチが配置されている。突起製造装置の構造は、基板載置位置の一方の面側に、移動機構に接続されたキャピラリと、金属線把握機構が配置される。さらに、基板載置位置の他方の面側には電気トーチ、水素ガストーチ、水素ガスを含むガストーチなどのトーチが配置されている。
【0042】
キャピラリは、装置本体に対し、X方向移動テーブル及びY方向移動テーブルを介して設置される。さらに、キャピラリは、基板方向に移動可能な、移動機構に設置され、キャピラリ先端部が基板に近接、接触、離脱可能となる。さらにキャピラリの移動機構には加圧機構も備えられている。
【0043】
相対するキャピラリ位置と、トーチの位置関係が保持できれば、上記突起製造装置のX軸方向、Y軸方向の移動機構は、基板載置位置に付与しても同様の機能を果たすことが可能である。
【0044】
上記突起製造装置の基板載置位置に基板を載置し、キャピラリに金属線を挿通する。金属線の直径は、8μmから400μm、望ましくは15μmから125μmが好ましい。キャピラリに挿通された金属線の先端は、キャピラリ先端部より突出した状態で、キャピラリ移動機構の動作により、キャピラリ先端部が基板に近接し、金属線の一端を基板の一方の面より貫通孔内を通過し、他方の面に突出させる。
【0045】
次に、他方の面に突出させた金属線の先端部を、前述したトーチにより溶融することで、金属線の先端にボールを形成する。
【0046】
ボール形成を行った後、次の工程として、キャピラリを上昇させることで、ボールは、基板方向に引き付けられるが、ボール直径が、基板を貫通する貫通穴の直径よりも大きく形成されるために、穴部周囲に接触した状態となる。さらに、キャピラリを,X方向移動テーブル及びY方向移動テーブルを動作して、基板の一方の面に配置される配線端子上に移動する。さらにキャピラリを配線端子方向に移動し、金属線と配線端子を接触させ、さらに、キャピラリを押圧して、金属線と、配線端子を電気的に接続する。この時キャピラリに超音波振動を付与することにより、金属線と配線パターンとの接続強度を増加させることができる。
【0047】
また、キャピラリを加熱して、金属線に伝熱することで、金属線を加熱し接続を行うことにより、金属線と配線端子との接続部強度を増加することも可能である。さらに、超音波と金属線加熱とを併用しても同様な効果を得ることができる。さらに併せて、接続時に基板が加熱されていれば、さらに金属線と配線端子の接続強度を確保し、接続時間を短縮するために効果的である。
【0048】
次に、金属線と、配線端子を接続が終了した後、金属線をクランプ機構により保持し、キャピラリを基板から離脱することで、金属線は、配線パターンの接続部より、キャピラリ方向で引き離し、余剰金属線を切断除去することとなる。 上記の工程により、基板の一方の面の配線端子と接続された、基板の他方の面に突出するボールを形成することができる。さらに複数個のボール形成を行うためには、クランプ機構を金属線を保持した状態で、キャピラリ方向に移動しクランプ機構により保持した金属線をキャピラリ先端より突出させ、次のボール形成の準備をする工程も本発明に含まれる。
【0049】
上記により入出力部の接続部に、容易に突起部を形成することのできる突起製造装置を提供することが可能となる。
【0050】
【発明の実施の形態】
以下本発明の実施例について、図面を参照して説明する。
【0051】
(実施例1)
図1は実施例1の基板の製造方法の第一の工程を示す断面図である。第一の工程は基板1の一方の面である第一面2から、基板1の他方の面である第二面3に貫通する貫通孔4を形成する工程である。第1面には、銅箔表面にニッケルメッキを施しさらに、ニッケルメッキ表面に金メッキを施した配線端子5が配置される。
【0052】
図2は実施例1の基板の製造方法の第二の工程を示す断面図である。第二の工程は図2の(a)に示すごとく金属線6の一端を基板1の第一面2側より貫通孔4に挿入し、さらに図2の(b)に示すごとく貫通孔4を通過させ、第2面3側に突出させる工程である。
【0053】
図3は実施例1の基板の製造方法の第三の工程を示す断面図である。第三の工程は、図3の(c)に示すごとく基板1の第二面3に突出させられた金属線6の先端部にボール7を形成し、さらに、図3の(d)に示すごとくボール7を基板1の、第二面3に近接させるる工程である。
【0054】
図4は実施例1の基板の製造方法の第四の工程を示す断面図である。第四の工程は、図4の(e)および(f)に示すごとく金属線6のうち基板1の第一面2側の所定部分を基板1の第一面2に形成された配線端子5に電気的に接続する工程である。
【0055】
図5は実施例1の基板の製造方法の第五の工程を示す断面図である。第五の工程は、配線端子5に電気的に接続された金属線6の、余剰金属線を切断する工程である。
【0056】
図1、図2、図3、図4及び図5を用いて以下に、さらに詳しく説明する。
【0057】
実施例1の第一の工程において、基板1の基板材料には、ガラスエポキシ系配線基板を用い、レーザ加工法による穿孔手段を用いて貫通孔4を穿孔する。貫通孔4の直径は45μmとした。
【0058】
次に第二の工程においては、金属線6の材質は、ワイヤーボンディングで用いられるボンディングワイヤの金線を用い、直径は30μmの直径の金線を用いた。金属線6は、図2(a)に示すごとく、キャピラリ9に挿通し、キャピラリ9先端部より金属線6の先端を突出させる。次に図2(b)に示すごとく、基板1の第一面2から、第二面3に貫通する貫通孔4内を通過し、第二面3に突出させる。
【0059】
さらに第三の工程においては、図3(c)に示すごとく、基板1の第二の面3に突出した金属線6の先端部に、ボール7を形成する。ボール7の直径は84μmである。次に図3(d)に示すごとく、キャピラリ9を基板1から離すことにより、ボール7は基板1の、第2面3に近接する。
【0060】
さらに第四の工程においては、図4(e)に示すごとくキャピラリ9を基板1の一方の面2に配置される配線端子5上に移動する。
【0061】
次に図4(f)に示すごとくキャピラリ9を配線端子5方向に移動し近接させて、金属線6と配線端子5を接触させ、さらに、キャピラリ9を押圧して、金属線6と配線端子5を電気的に接続する。さらに第五の工程において、次に図5に示すごとく、キャピラリ9側に残る余剰の金属線6を、接続部とキャピラリ9間で切断除去することで、基板1の第一面2の配線端子5と接続された基板1の第二面3に突出するボールを形成することができる。
【0062】
さらにこれらの工程を、突起電極を形成すべき箇所の回数繰り返すことによって、突起電極を形成した本発明の基板は作成される。
【0063】
(実施例2)
図6は実施例2の基板を示す概略図である。
【0064】
実施例2において、基板101の基板材料には、ポリイミド樹脂基板を用い、レーザ加工法による穿孔手段を用いて、基板101の入出力部の接続部に対応する位置に、複数の貫通孔4を穿孔する。基板101の第1面2には、入出力部に対応する配線端子5が配置され、それぞれの配線端子5は、配線パターン102により図示しない外部接続電極へ接続されている。
【0065】
貫通孔4の直径は30μmとした。次に第一の工程においては、金属線6の材質は、ワイヤーボンディングで用いられるボンディングワイヤの金線を用い、直径は25μmの直径の金線を用いた。金属線6は、キャピラリ9に挿通し、キャピラリ9先端部より金属線6の先端を突出させる。次に基板101の第一面2から、前記第二面3に貫通する貫通孔4内を通過し、第二面3に突出させる。
【0066】
さらに第二の工程においては基板101の第二の面3に突出した金属線6の先端部に、ボール7を形成する。ボール7の直径は78μmである。次にキャピラリ9を基板101から離すことにより、ボール7は基板101の、第2面3に近接する。
【0067】
さらに第三の工程においては、キャピラリ9を基板101の第一面2に配置される配線端子5上に移動する。
【0068】
次に第四の工程においては、キャピラリ9を配線端子5方向に移動し近接させて、金属線6と配線端子5を接触させ、さらに、キャピラリ9を押圧して、金属線6と配線端子5を電気的に接続する。
【0069】
次に第五の工程においては、キャピラリ9側に残る余剰の金属線を、接続部とキャピラリ間で切断除去することで、基板101の第一面2の配線端子5と接続された基板101の第二面に突出するボールを形成することができる。
【0070】
さらにこの工程を、突起電極を形成すべき箇所の回数繰り返すことによって、突起電極を形成した本発明の基板は作成される。
【0071】
(実施例3)
図7は、実施例3に係る突起製造装置の一部を示す配置図である。
【0072】
基板載置台201と、キャピラリ9と、トーチ202を有する。基板載置台201の、基板載置位置210の上方にキャピラリ9を配置し、さらに基板載置台201の下方にトーチ202を配置した。キャピラリ9の上方には金属線6のクランプ機構203が配置される。
【0073】
図8は、実施例3に係る突起製造装置の一部を示す概略図である。
【0074】
突起製造装置装置200は、ボンディングヘッド205が、装置本体206に対し、X方向移動テーブル207及びY方向移動テーブル208を介して設置され、このボンディングヘッド205にボンディングアーム209を介してキャピラリ9が固着される。さらにボンディングヘッド205にトーチ202が配置され、また、基板載置台201は、装置本体206に固定されている。基板載置台201に対するキャピラリ9とトーチ202の位置関係は、基板載置台201の、基板載置位置210の上方にキャピラリ9を配置し、さらに基板載置位置の下方にトーチ202を配置した。
【0075】
図7及び図8を用いて本発明に係る突起製造装置の実施例について説明する。
【0076】
X方向移動テーブル207は、図示しないX方向駆動機構によりボンディングヘッド205をX方向に移動できる。また、Y方向移動テーブル208は、図示しないY方向駆動機構によりボンディングヘッド205をY方向に移動できる。
【0077】
ボンディングアーム209はボンディングヘッド205に対し鉛直方向に揺動可能に支持され、図示しないボンディングアーム駆動機構により駆動する。トーチ202は、ボンディングヘッド205に対して水平方向に揺動可能に構成される。
【0078】
キャピラリ9と、トーチ202は、装置本体206に固定されている基板載置台201の基板配置位置210を挟み対向して配置され、基板載置台201に対するキャピラリ9とトーチ202の位置関係は、基板載置台201の、基板載置位置210の上方にキャピラリ9を配置し、さらに基板載置位置210の下方にトーチ202を配置した。
【0079】
金属線6は、金属線6を巻き付けたスプール211より供給され、図示しないワイヤ案内板に案内され、クランプ機構203間を通ってキャピラリ9へ導かれ、キャピラリ9に金属線6が挿通される。また、トーチ202の先端にはトーチ電極212が形成されている。
【0080】
上記のごとき構成の突起製造装置200の動作について、さらに詳しく説明する。
【0081】
スプール211より供給された金属線6は図示しないワイヤ案内板に案内され、クランプ機構203間を通ってキャピラリ9へ導かれ、キャピラリ9に金属線6が挿通される。
【0082】
キャピラリ9を、貫通穴に照準を合わせるように、X方向移動テーブル207及びY方向移動テーブル208を移動させて、位置決めする。
【0083】
次に金属線6をクランプ機構203により把握し、ボンディングアーム209を下降することにより、キャピラリ202の先端に挿通された金属線6の先端を、基板1の第一面2から、第二面3に貫通する貫通孔4内を通過し、第二面3に突出させる。
【0084】
つぎに金属線6の先端とトーチ203間に、放電による電気スパークを発生させ、金属線6の先端にボール7を形成する。
【0085】
ボール形成を行った後、クランプ機構203による金属線6の把握を解除し、キャピラリ9を上昇させることで、ボール7は、基板方向に引き付けられる。ボール7の直径は基板を貫通する貫通穴4の直径よりも大きく形成されるために、ボール7が、貫通穴4の穴部周囲に接触した状態となる。
【0086】
キャピラリ9を上昇させた後キャピラリ9を、配線端子5の接続位置に照準を合わせるように、X方向移動テーブル207及びY方向移動テーブル208を配線端子5上に移動する。
【0087】
この後再びボンディングアーム209を下降することにで、キャピラリ9を下降させ、金属線6と配線端子5を接触させ、さらに、キャピラリ9により金属線6を配線端子5に押しつけ、金属線6を変形させながら金属線6と配線端子5を、電気的に接続する。接続時キャピラリ9に超音波振動を付与することにより、金属線6と配線端子5との接続強度を増加させることができる。
【0088】
その後、キャピラリ9を配線端子5上の接続部より上昇させ、予め設定した把握位置で、金属線6をクランプ機構203により把握し、さらにキャピラリ9を上昇させる。金属線6はクランプ機構203により把握されているために、キャピラリ9から送り出されず、金属線6と配線端子5の接続部に引っ張り力がかかり、余剰となる金属線を接続部より切断し引き離すことができる。さらにボンディングアーム209を上昇し、停止点である定位置に戻すことで、一回の動作を終了し、基板の第1面2の配線端子5と接続された基板の第2面3に突出するボール7を形成することが可能となり、一つの突起電極が形成される。
【0089】
この動作を、突起電極を形成すべき箇所の回数繰り返すことによって、突起電極を形成した、本発明の基板は作成される。
【0090】
ボール7の直径は、金属線6の先端と、トーチ203間の電気スパーク時の電流値、放電時間量により変化させることが可能となるが、金属線6の太さの1.5倍から3.5倍の直径を確保できるように調整すべきである。
【0091】
また、キャピラリを加熱して、金属線に伝熱することで、金属線を加熱し接続を行うことにより、金属線と配線端子との接続部強度を増加することも可能である。さらに、超音波と金属線加熱とを併用しても同様な効果を得ることができる。さらに併せて、接続時に基板が加熱されていれば、さらに金属線と配線端子の接続強度を確保し、接続時間を短縮するために効果的である。
【0092】
さらに複数個のボール形成を行うためには、クランプ機構を金属線を保持した状態で、キャピラリ方向に移動しクランプ機構により保持した金属線をキャピラリ先端より突出させ、次のボール形成の準備をする工程も本発明に含まれる。
【0093】
基板載置位置が、移動可能な移動機構上に配置され、X方向、Y方向に移動可能であっても相対するキャピラリ位置と、トーチの位置関係が保持できれば、上記突起製造装置の移動機構は、同様の機能を果たすため、本発明に含まれる。さらに、キャピラリが、基板方向に移動可能な、移動機構に設置され、キャピラリ先端部が基板に近接、接触、離脱可能となり、さらにキャピラリの移動機構には加圧機構も備えられおり、キャピラリ移動機構にあわせて付与しても同様の機能を果たすことが可能である。
【0094】
【発明の効果】
以上述べたように、本発明の基板の製造方法によれば、入出力部の接続部に、容易に突起部を配置可能な製造方法を提供することができる。さらに本発明の基板によれば、入出力部の接続部に、導電性ボールの欠落を生じさせることなく容易に突起部を配置可能な基板を提供することができる。また、本発明の突起製造装置によれば、入出力部の接続部に、導電性ボールの欠落を生じさせることなく容易に突起部を形成することの可能な突起製造装置を提供することができる。さらに、導電性ボールの欠落を抑えることの可能な基板の製造方法を提供することが可能となり、よって信頼性の高い基板を提供することができる。
【図面の簡単な説明】
【図1】 実施例1の基板の製造方法の第一の工程を示す断面図である。
【図2】 実施例1の基板の製造方法の第二の工程を示す断面図である。
【図3】 実施例1の基板の製造方法の第三の工程を示す断面図である。
【図4】 実施例1の基板の製造方法の第四の工程を示す断面図である。
【図5】 実施例1の基板の製造方法の第五の工程を示す断面図である。
【図6】 実施例2の基板を示す概略図である。
【図7】 実施例3に係る突起製造装置の一部を示す配置図である。
【図8】 実施例3に係る突起製造装置の一部を示す概略図である。
【符号の説明】
1 基板
2 第一面
3 第二面
4 貫通孔
5 配線端子
6 金属線
7 ボール
9 キャピラリ
101 実施例2に用いられる基板
102 配線パターン
201 基板載置台
202 トーチ
203 クランプ機構
205 ボンディングヘッド
206 装置本体
207 Y方向移動テーブル
208 X方向移動テーブル
209 ボンディングアーム
210 基板載置位置
212 スプール
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a substrate, a substrate manufacturing method, and a protrusion manufacturing apparatus.
[0002]
[Prior art]
As electronic devices have become smaller, lighter, and more functional, electronic components used for them have become smaller, lighter, and more functional. For this purpose, high-density mounting techniques such as BGA (Ball Grid Area) packages and semiconductor devices using flip chip bonding have been developed.
[0003]
BGA packages use printed circuit boards, high thermal conductive ceramics such as aluminum nitride, and high heat-resistant resins such as polyimide resins. This is characterized in that a bump formed of a copper ball or the like subjected to the above is disposed and melted to connect the input / output part of the package to the terminal of the wiring board.
[0004]
With the advent of the technology as described above, it is possible to reduce the size as compared with connecting to a printed wiring board using QFP (Quad Flat Package).
[0005]
[Problems to be solved by the invention]
However, printed circuit boards, high thermal conductive ceramics such as aluminum nitride, and high heat resistant resins such as polyimide resin, etc., solder balls and solder plating were applied to the input / output portions of the wiring board and package base material. As a technique for arranging conductive balls such as copper balls, a number of conductive balls are picked up by a mounting head as described in the "Prior Art" column of Japanese Patent Application Laid-Open No. 9-223712, and then this mounting There is known a method in which a head is moved above a work and moved up and down there to mount a large number of conductive balls on the work electrodes at the same time. As described in the section “Problems to be solved by the invention”, even if the mounting head is moved up and down in the conductive ball supply section, The conductive balls by vacuum suction not always be picked up, prone to lack of the conductive ball has a problem that the.
[0006]
Therefore, the present invention has been made to solve such a problem, and manufacture of a substrate in which a protruding portion can be easily arranged without causing a loss of a conductive ball at a connection portion of an input / output portion of the substrate. It is an object to provide a method and a substrate manufactured by this method.
[0007]
It is another object of the present invention to provide a protrusion manufacturing apparatus that can easily form a protrusion in the connection part of the input / output part without causing a loss of conductive balls.
[0008]
[Means for Solving the Problems]
According to a first aspect of the present invention, there is provided a method of manufacturing a substrate comprising: a metal wire disposed in a through hole of a substrate having a through hole penetrating from one surface side of the substrate to the other surface side; One end of the substrate is inserted from one surface side of the substrate and protruded to the other surface side of the substrate, and a ball is formed at the tip of the metal wire; It has a step of connecting a predetermined portion on the surface side to a wiring terminal formed on one surface of the substrate and a step of cutting and removing excess metal lines in this order.
[0009]
The method of manufacturing a substrate according to claim 2 includes a step of forming a through-hole penetrating from one surface of the substrate having a wiring terminal on at least one surface to the other surface, and a tip of a metal wire inserted through the tip of the capillary Are inserted into a through-hole from one surface side of the substrate and protruded to the other surface side, a step of forming a ball at the tip of the metal wire, a step of raising the capillary, and the capillary Moving on the wiring terminal disposed on one surface of the substrate, lowering the capillary, pressing and joining the metal wire to the wiring terminal, and cutting off the excess metal wire of the metal wire, In this order.
[0010]
According to a third aspect of the present invention, there is provided a substrate manufacturing method comprising: a plurality of wiring terminals on at least one surface; and a plurality of through holes penetrating from one surface of the substrate to the other surface. Inserting one end into the through hole from one side of the substrate and projecting the other side of the substrate to form a ball at the tip of the metal wire; The step of electrically connecting a predetermined portion on one side to a wiring terminal formed on one side of the substrate and the step of cutting and removing excess metal lines are repeated a plurality of times in this order. .
[0011]
5. The substrate manufacturing method according to claim 4, wherein a tip of a capillary is provided on a substrate having a plurality of wiring terminals on at least one surface and having a plurality of through holes penetrating from one surface of the substrate to the other surface. Inserting the tip of the metal wire inserted into the through hole into the through hole from one side of the substrate and projecting it to the other side, forming a ball at the tip of the metal wire, and the capillary A step of moving the capillary onto a wiring terminal disposed on one surface of the substrate, a step of lowering the capillary and pressing and joining a metal wire to the wiring terminal, The step of cutting off the surplus metal wire is repeated a plurality of times in this order.
[0012]
The substrate manufacturing method according to claim 5 is the substrate manufacturing method according to any one of claims 1 to 4, wherein the ball is formed by melting a tip portion of a metal wire.
[0013]
The substrate material of the substrate having a wiring pattern on at least one of the substrates used in the method for manufacturing a substrate according to claim 1 or 2 includes glass epoxy substrate, quartz glass, borosilicate glass, and soda lime glass having a silica sheet on the surface. Inorganic glasses such as, etc., organic plastic films or sheets, ceramics such as alumina and silicon carbide, silicon substrates and the like are preferably used.
[0014]
The substrate is first cut from one surface of the substrate using a cutting means such as a drill, mechanical means such as grinding or punching by press, laser processing, or perforating means such as anisotropic etching or plasma etching. A through-hole penetrating through the surface is drilled. The diameter of the through hole is 15 μm to 450 μm, preferably 30 μm to 120 μm, larger than the diameter of the metal wire used in the process described later, and smaller than the diameter of the ball to be formed, and within twice the diameter of the metal wire used It is preferable that
[0015]
Next, one end of the metal wire is inserted into the through-hole from one surface side of the substrate and protruded to the other surface side of the substrate.
[0016]
For the metal wire, a material made of a metal such as gold or copper, an alloy containing gold, an alloy containing copper, or an alloy such as lead tin or silver tin is used. The diameter of the metal wire is preferably 8 μm to 400 μm, more preferably 15 μm to 125 μm.
[0017]
The metal wire is inserted into the capillary, and the tip of the metal wire inserted through the capillary protrudes from the tip of the capillary, passes one end of the metal wire through the through hole from one surface of the substrate, and the other surface. To protrude.
[0018]
Next, the tip of the metal wire protruding from the other surface is melted by a torch such as an electric torch, a hydrogen gas torch, or a gas torch containing hydrogen gas, thereby forming a ball at the tip of the metal wire.
[0019]
The diameter of the ball to be formed is 2 to 3.8 times the metal wire diameter, but preferably 2.3 to 3.2 times. By setting the diameter of the ball to be formed from 2.3 times to 3.2 times, it is possible to obtain a stable ball diameter and to easily form a ball with less deformation.
[0020]
After the ball formation, as a next step, a predetermined portion of the metal wire on one surface side of the substrate is electrically connected to a wiring terminal formed on one surface of the substrate.
[0021]
The formed ball is attracted in the direction of the substrate by raising the capillary. However, since the ball diameter is formed larger than the diameter of the through hole penetrating the substrate, the ball is in contact with the periphery of the hole. . Further, the capillary is raised, and then the capillary is moved onto a wiring terminal arranged on one surface of the substrate. Next, the capillary is moved in the direction of the wiring terminal and brought close thereto so that the metal wire and the wiring terminal are brought into contact with each other. Further, the capillary is pressed to electrically connect the metal wire and the wiring terminal. At this time, by applying ultrasonic vibration to the capillary, the connection strength between the metal wire and the wiring terminal can be increased.
[0022]
Further, by heating the capillary and transferring the heat to the metal wire, the connection strength between the metal wire and the wiring terminal can be increased by heating and connecting the metal wire. Furthermore, the same effect can be obtained even when ultrasonic waves and metal wire heating are used in combination. In addition, if the substrate is heated at the time of connection, it is effective to further secure the connection strength between the metal wire and the wiring terminal and shorten the connection time.
[0023]
After the connection between the metal wire and the wiring terminal, as a next step, the surplus metal wire remaining on the capillary side is cut and removed between the connection portion and the capillary, so that the wiring terminal on one surface of the substrate Balls that are connected and project on the other surface of the substrate can be formed.
[0024]
Furthermore, by repeating this process a plurality of times, the substrate of the present invention on which the protruding electrodes are formed is produced.
[0025]
The substrate material of the substrate having a plurality of wiring terminals on at least one surface used in the method for manufacturing a substrate according to claim 3 or claim 4 is glass epoxy substrate, quartz glass, borosilicate glass, soda having a silica sheet on the surface. Inorganic glasses such as lime glass, organic plastic films or sheets, ceramics such as alumina and silicon carbide, silicon substrates, and the like are preferably used.
[0026]
The substrate should be at least connected to the input / output portion of the substrate by using a cutting means such as a drill, mechanical means such as grinding or punching by press, laser processing, or drilling means such as anisotropic etching or plasma etching. A through hole penetrating from one surface of the substrate to the other surface is drilled at a corresponding position. The diameter of the through hole is 15 μm to 450 μm, preferably 30 μm to 120 μm, larger than the diameter of the metal wire used in the process described later, and smaller than the diameter of the ball to be formed, and within twice the diameter of the metal wire used It is preferable that
[0027]
Using the substrate as described above, one end of the metal wire is first inserted into the through hole from one surface side of the substrate and protruded to the other surface side of the substrate.
[0028]
For the metal wire, a material made of a metal such as gold or copper, an alloy containing gold, an alloy containing copper, or an alloy such as lead tin or silver tin is used. The diameter of the metal wire is preferably 8 μm to 400 μm, more preferably 15 μm to 125 μm.
[0029]
The metal wire is inserted into the capillary, and the tip of the metal wire inserted through the capillary protrudes from the tip of the capillary, passes one end of the metal wire through the through hole from one surface of the substrate, and the other surface. To protrude.
[0030]
Next, the tip of the metal wire protruding from the other surface is melted by a torch such as an electric torch, a hydrogen gas torch, or a gas torch containing hydrogen gas, thereby forming a ball at the tip of the metal wire.
[0031]
The diameter of the ball to be formed is 2 to 3.8 times the metal wire diameter, but preferably 2.3 to 3.2 times. By setting the diameter of the ball to be formed from 2.3 times to 3.2 times, it is possible to obtain a stable ball diameter and to easily form a ball with less deformation.
[0032]
After the ball formation, as a next step, a predetermined portion of the metal wire on one surface side of the substrate is electrically connected to a wiring terminal formed on one surface of the substrate.
[0033]
The formed ball is attracted in the direction of the substrate by raising the capillary. However, since the ball diameter is formed larger than the diameter of the through hole penetrating the substrate, the ball is in contact with the periphery of the hole. . Further, the capillary is raised, and then the capillary is moved onto a wiring terminal arranged on one surface of the substrate. Next, the capillary is moved in the direction of the wiring terminal and brought close thereto so that the metal wire and the wiring terminal are brought into contact with each other. Further, the capillary is pressed to electrically connect the metal wire and the wiring terminal. At this time, by applying ultrasonic vibration to the capillary, the connection strength between the metal wire and the wiring terminal can be increased.
[0034]
Further, by heating the capillary and transferring the heat to the metal wire, the connection strength between the metal wire and the wiring terminal can be increased by heating and connecting the metal wire. Furthermore, the same effect can be obtained even when ultrasonic waves and metal wire heating are used in combination. In addition, if the substrate is heated at the time of connection, it is effective to further secure the connection strength between the metal wire and the wiring terminal and shorten the connection time.
[0035]
After the connection between the metal wire and the wiring terminal, as a next step, the surplus metal wire remaining on the capillary side is cut and removed between the connection portion and the capillary to be connected to the wiring terminal on one side of the substrate. In addition, a ball protruding on the other surface of the substrate can be formed.
[0036]
Furthermore, by repeating this process a plurality of times, the substrate of the present invention on which the protruding electrodes are formed is produced.
[0037]
A substrate according to a sixth aspect is manufactured using the method for manufacturing a substrate according to any one of the first to fifth aspects, and has a spherical ball at a tip of the metal wire, and extends from the through hole toward the capillary. It is stretched and the metal wire is connected to the wiring terminal by drawing an arc.
[0038]
A plurality of through holes are arranged in the substrate, and a substrate having a protruding ball is formed on the entire through hole or selectively by performing the substrate manufacturing method according to any one of claims 1 to 5. The
[0039]
The substrate manufacturing method and the substrate manufactured by this method can easily form protrusions without causing loss of conductive balls, and are less expensive than equipment such as ball suction ball arrangement. In addition, it is possible to provide a substrate with an advantage that it is possible to provide a large amount of equipment, and that it is not necessary to perform a missing ball inspection, and that a highly reliable substrate can be provided.
[0040]
According to a seventh aspect of the present invention, in the projection manufacturing apparatus, a substrate mounting table for mounting a substrate, a capillary is disposed on one surface side of the substrate mounting position of the substrate mounting table, and further on the other surface side of the substrate mounting position. A torch is placed,
The capillary is a projection manufacturing apparatus supported so as to be swingable in the vertical direction,
The metal wire held by the capillary is inserted into the through hole of the substrate, and a ball is formed by the torch at the tip of the metal wire protruding from the substrate,
The capillary is raised and moved onto a wiring terminal provided on the substrate,
The capillary is lowered, and the metal wire is pressed and joined to the wiring terminal.
[0041]
In the projection manufacturing apparatus, a capillary is disposed on one surface side of the substrate placement position, and a torch is disposed on the other surface side of the substrate placement position. In the structure of the projection manufacturing apparatus, a capillary connected to a moving mechanism and a metal wire grasping mechanism are arranged on one surface side of the substrate mounting position. Furthermore, a torch such as an electric torch, a hydrogen gas torch, or a gas torch containing hydrogen gas is disposed on the other surface side of the substrate placement position.
[0042]
The capillaries are installed on the apparatus main body via an X direction moving table and a Y direction moving table. Furthermore, the capillary is installed in a moving mechanism that can move in the direction of the substrate, and the tip of the capillary can be brought close to, in contact with, and detached from the substrate. The capillary moving mechanism is also provided with a pressurizing mechanism.
[0043]
If the positional relationship between the opposing capillary position and the torch can be maintained, the movement mechanism in the X-axis direction and the Y-axis direction of the projection manufacturing apparatus can perform the same function even if it is applied to the substrate mounting position. .
[0044]
A substrate is placed at the substrate placement position of the projection manufacturing apparatus, and a metal wire is inserted through the capillary. The diameter of the metal wire is preferably 8 μm to 400 μm, more preferably 15 μm to 125 μm. With the tip of the metal wire inserted through the capillary protruding from the tip of the capillary, the capillary tip is brought close to the substrate by the operation of the capillary moving mechanism, and one end of the metal wire is inserted into the through-hole from one surface of the substrate. And project to the other surface.
[0045]
Next, the tip of the metal wire projected to the other surface is melted by the torch described above, thereby forming a ball at the tip of the metal wire.
[0046]
After performing the ball formation, as the next step, by raising the capillary, the ball is attracted in the direction of the substrate, but the ball diameter is formed larger than the diameter of the through hole that penetrates the substrate. It will be in the state which contacted the hole circumference. Further, the capillary is moved on the wiring terminal arranged on one surface of the substrate by operating the X direction moving table and the Y direction moving table. Further, the capillary is moved in the direction of the wiring terminal, the metal wire and the wiring terminal are brought into contact, and further, the capillary is pressed to electrically connect the metal wire and the wiring terminal. At this time, by applying ultrasonic vibration to the capillary, the connection strength between the metal wire and the wiring pattern can be increased.
[0047]
Further, by heating the capillary and transferring the heat to the metal wire, the connection strength between the metal wire and the wiring terminal can be increased by heating and connecting the metal wire. Furthermore, the same effect can be obtained even when ultrasonic waves and metal wire heating are used in combination. In addition, if the substrate is heated at the time of connection, it is effective to further secure the connection strength between the metal wire and the wiring terminal and shorten the connection time.
[0048]
Next, after the connection between the metal wire and the wiring terminal is completed, the metal wire is held by the clamp mechanism and the capillary is detached from the substrate, so that the metal wire is separated from the connection portion of the wiring pattern in the capillary direction, The excess metal wire is cut and removed. Through the above process, a ball protruding from the other surface of the substrate connected to the wiring terminal on one surface of the substrate can be formed. In order to form a plurality of balls, the metal wire held in the clamping mechanism is moved in the direction of the capillary while holding the metal wire, and the metal wire held by the clamp mechanism is projected from the tip of the capillary to prepare for the next ball formation. A process is also included in the present invention.
[0049]
As described above, it is possible to provide a projection manufacturing apparatus capable of easily forming a projection at the connection portion of the input / output unit.
[0050]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below with reference to the drawings.
[0051]
Example 1
FIG. 1 is a cross-sectional view showing a first step of the substrate manufacturing method according to the first embodiment. The first step is a step of forming a through hole 4 penetrating from the first surface 2 which is one surface of the substrate 1 to the second surface 3 which is the other surface of the substrate 1. On the first surface, there is disposed a wiring terminal 5 in which the copper foil surface is nickel-plated and the nickel-plated surface is gold-plated.
[0052]
FIG. 2 is a cross-sectional view illustrating a second step of the substrate manufacturing method according to the first embodiment. In the second step, one end of the metal wire 6 is inserted into the through hole 4 from the first surface 2 side of the substrate 1 as shown in FIG. 2A, and the through hole 4 is further inserted as shown in FIG. This is a step of passing through and projecting the second surface 3 side.
[0053]
FIG. 3 is a cross-sectional view illustrating a third step of the method for manufacturing the substrate according to the first embodiment. In the third step, as shown in FIG. 3C, a ball 7 is formed at the tip of the metal wire 6 projected from the second surface 3 of the substrate 1, and further, as shown in FIG. In this manner, the ball 7 is brought close to the second surface 3 of the substrate 1.
[0054]
FIG. 4 is a cross-sectional view showing a fourth step of the method for manufacturing the substrate of Example 1. FIG. In the fourth step, as shown in FIGS. 4E and 4F, a predetermined portion of the metal wire 6 on the first surface 2 side of the metal wire 6 is formed on the first surface 2 of the substrate 1. It is the process of electrically connecting to.
[0055]
FIG. 5 is a cross-sectional view illustrating a fifth step of the method for manufacturing the substrate of Example 1. FIG. The fifth step is a step of cutting the excess metal wire of the metal wire 6 electrically connected to the wiring terminal 5.
[0056]
This will be described in more detail below with reference to FIGS. 1, 2, 3, 4 and 5.
[0057]
In the first step of Example 1, a glass epoxy wiring board is used as the substrate material of the substrate 1, and the through hole 4 is drilled using a drilling means by a laser processing method. The diameter of the through hole 4 was 45 μm.
[0058]
Next, in the second step, the metal wire 6 was made of a gold wire of a bonding wire used in wire bonding, and a gold wire having a diameter of 30 μm was used. As shown in FIG. 2A, the metal wire 6 is inserted into the capillary 9 so that the tip of the metal wire 6 protrudes from the tip of the capillary 9. Next, as shown in FIG. 2 (b), the first surface 2 of the substrate 1 passes through the through hole 4 penetrating the second surface 3 and protrudes to the second surface 3.
[0059]
Further, in the third step, as shown in FIG. 3C, a ball 7 is formed at the tip of the metal wire 6 protruding on the second surface 3 of the substrate 1. The diameter of the ball 7 is 84 μm. Next, as shown in FIG. 3 (d), the ball 7 comes close to the second surface 3 of the substrate 1 by separating the capillary 9 from the substrate 1.
[0060]
Further, in the fourth step, the capillary 9 is moved onto the wiring terminal 5 disposed on the one surface 2 of the substrate 1 as shown in FIG.
[0061]
Next, as shown in FIG. 4 (f), the capillary 9 is moved in the direction of the wiring terminal 5 and brought close to it, the metal wire 6 and the wiring terminal 5 are brought into contact with each other, and further, the capillary 9 is pressed so that the metal wire 6 and the wiring terminal are brought into contact. 5 is electrically connected. Further, in the fifth step, as shown in FIG. 5, the surplus metal wire 6 remaining on the capillary 9 side is cut and removed between the connection portion and the capillary 9 so that the wiring terminals on the first surface 2 of the substrate 1 are removed. A ball protruding on the second surface 3 of the substrate 1 connected to 5 can be formed.
[0062]
Furthermore, by repeating these steps as many times as the number of locations where the protruding electrodes are to be formed, the substrate of the present invention on which the protruding electrodes are formed is produced.
[0063]
(Example 2)
FIG. 6 is a schematic view showing a substrate of Example 2.
[0064]
In the second embodiment, a polyimide resin substrate is used as the substrate material of the substrate 101, and a plurality of through holes 4 are formed at positions corresponding to the connection portions of the input / output portions of the substrate 101 using a drilling means by a laser processing method. Perforate. On the first surface 2 of the substrate 101, wiring terminals 5 corresponding to the input / output units are arranged, and each wiring terminal 5 is connected to an external connection electrode (not shown) by a wiring pattern 102.
[0065]
The diameter of the through hole 4 was 30 μm. Next, in the first step, the metal wire 6 was made of a gold wire of a bonding wire used in wire bonding, and a gold wire having a diameter of 25 μm was used. The metal wire 6 is inserted into the capillary 9 so that the tip of the metal wire 6 protrudes from the tip of the capillary 9. Next, the first surface 2 of the substrate 101 passes through the through hole 4 penetrating the second surface 3 and is projected to the second surface 3.
[0066]
Further, in the second step, the ball 7 is formed at the tip of the metal wire 6 protruding on the second surface 3 of the substrate 101. The diameter of the ball 7 is 78 μm. Next, by separating the capillary 9 from the substrate 101, the ball 7 comes close to the second surface 3 of the substrate 101.
[0067]
Further, in the third step, the capillary 9 is moved onto the wiring terminal 5 disposed on the first surface 2 of the substrate 101.
[0068]
Next, in the fourth step, the capillary 9 is moved in the direction of the wiring terminal 5 and brought close to it, the metal wire 6 and the wiring terminal 5 are brought into contact with each other, and further, the capillary 9 is pressed and the metal wire 6 and the wiring terminal 5 are pressed. Are electrically connected.
[0069]
Next, in the fifth step, the excess metal wire remaining on the capillary 9 side is cut and removed between the connection portion and the capillary, whereby the substrate 101 connected to the wiring terminal 5 on the first surface 2 of the substrate 101 is removed. A ball protruding on the second surface can be formed.
[0070]
Furthermore, the substrate of the present invention on which the protruding electrode is formed is produced by repeating this process as many times as the number of places where the protruding electrode is to be formed.
[0071]
Example 3
FIG. 7 is a layout diagram illustrating a part of the protrusion manufacturing apparatus according to the third embodiment.
[0072]
A substrate mounting table 201, a capillary 9, and a torch 202 are provided. The capillary 9 is disposed above the substrate placement position 210 of the substrate placement table 201, and the torch 202 is disposed below the substrate placement table 201. A clamp mechanism 203 for the metal wire 6 is disposed above the capillary 9.
[0073]
FIG. 8 is a schematic diagram illustrating a part of the protrusion manufacturing apparatus according to the third embodiment.
[0074]
In the projection manufacturing apparatus 200, the bonding head 205 is installed on the apparatus main body 206 via the X direction moving table 207 and the Y direction moving table 208, and the capillary 9 is fixed to the bonding head 205 via the bonding arm 209. Is done. Further, the torch 202 is disposed on the bonding head 205, and the substrate mounting table 201 is fixed to the apparatus main body 206. Regarding the positional relationship between the capillary 9 and the torch 202 with respect to the substrate mounting table 201, the capillary 9 is disposed above the substrate mounting position 210 of the substrate mounting table 201, and the torch 202 is further disposed below the substrate mounting position.
[0075]
An embodiment of the projection manufacturing apparatus according to the present invention will be described with reference to FIGS.
[0076]
The X direction moving table 207 can move the bonding head 205 in the X direction by an X direction driving mechanism (not shown). The Y-direction moving table 208 can move the bonding head 205 in the Y direction by a Y-direction drive mechanism (not shown).
[0077]
The bonding arm 209 is supported by the bonding head 205 so as to be swingable in the vertical direction, and is driven by a bonding arm driving mechanism (not shown). The torch 202 is configured to be swingable in the horizontal direction with respect to the bonding head 205.
[0078]
The capillary 9 and the torch 202 are disposed to face each other with the substrate placement position 210 of the substrate mounting table 201 fixed to the apparatus main body 206 interposed therebetween. The positional relationship between the capillary 9 and the torch 202 with respect to the substrate mounting table 201 is The capillary 9 is disposed above the substrate placement position 210 of the placement table 201, and the torch 202 is disposed below the substrate placement position 210.
[0079]
The metal wire 6 is supplied from a spool 211 around which the metal wire 6 is wound, guided by a wire guide plate (not shown), guided to the capillary 9 through the clamp mechanism 203, and the metal wire 6 is inserted into the capillary 9. A torch electrode 212 is formed at the tip of the torch 202.
[0080]
The operation of the projection manufacturing apparatus 200 configured as described above will be described in more detail.
[0081]
The metal wire 6 supplied from the spool 211 is guided by a wire guide plate (not shown), guided through the clamp mechanism 203 to the capillary 9, and the metal wire 6 is inserted into the capillary 9.
[0082]
The capillary 9 is positioned by moving the X-direction moving table 207 and the Y-direction moving table 208 so that the aim is in the through hole.
[0083]
Next, the metal wire 6 is grasped by the clamp mechanism 203 and the bonding arm 209 is lowered so that the tip of the metal wire 6 inserted through the tip of the capillary 202 is moved from the first surface 2 of the substrate 1 to the second surface 3. It passes through the through hole 4 penetrating through the second surface 3 and protrudes to the second surface 3.
[0084]
Next, an electric spark is generated between the tip of the metal wire 6 and the torch 203 to form a ball 7 at the tip of the metal wire 6.
[0085]
After the ball formation, the grasp of the metal wire 6 by the clamp mechanism 203 is released, and the capillary 9 is raised, whereby the ball 7 is attracted toward the substrate. Since the diameter of the ball 7 is larger than the diameter of the through hole 4 penetrating the substrate, the ball 7 is in contact with the periphery of the hole portion of the through hole 4.
[0086]
After raising the capillary 9, the X-direction moving table 207 and the Y-direction moving table 208 are moved onto the wiring terminal 5 so that the capillary 9 is aimed at the connection position of the wiring terminal 5.
[0087]
After that, by lowering the bonding arm 209 again, the capillary 9 is lowered, the metal wire 6 and the wiring terminal 5 are brought into contact with each other, and the metal wire 6 is pressed against the wiring terminal 5 by the capillary 9 to deform the metal wire 6. Then, the metal wire 6 and the wiring terminal 5 are electrically connected. By applying ultrasonic vibration to the capillary 9 at the time of connection, the connection strength between the metal wire 6 and the wiring terminal 5 can be increased.
[0088]
Thereafter, the capillary 9 is raised from the connection portion on the wiring terminal 5, the metal wire 6 is grasped by the clamp mechanism 203 at the grasping position set in advance, and the capillary 9 is further raised. Since the metal wire 6 is grasped by the clamp mechanism 203, it is not sent out from the capillary 9, a tensile force is applied to the connecting portion between the metal wire 6 and the wiring terminal 5, and the excess metal wire is cut away from the connecting portion and pulled away. Can do. Further, by raising the bonding arm 209 and returning it to a fixed position as a stop point, one operation is finished, and it protrudes to the second surface 3 of the substrate connected to the wiring terminal 5 of the first surface 2 of the substrate. The ball 7 can be formed, and one protruding electrode is formed.
[0089]
By repeating this operation as many times as the number of locations where the protruding electrodes are to be formed, the substrate of the present invention on which the protruding electrodes are formed is produced.
[0090]
The diameter of the ball 7 can be changed depending on the current value of the electric spark between the tip of the metal wire 6 and the torch 203 and the amount of discharge time. It should be adjusted to ensure a diameter of 5 times.
[0091]
Further, by heating the capillary and transferring the heat to the metal wire, the connection strength between the metal wire and the wiring terminal can be increased by heating and connecting the metal wire. Furthermore, the same effect can be obtained even when ultrasonic waves and metal wire heating are used in combination. In addition, if the substrate is heated at the time of connection, it is effective to further secure the connection strength between the metal wire and the wiring terminal and shorten the connection time.
[0092]
In order to form a plurality of balls, the metal wire held in the clamping mechanism is moved in the direction of the capillary while holding the metal wire, and the metal wire held by the clamp mechanism is projected from the tip of the capillary to prepare for the next ball formation. A process is also included in the present invention.
[0093]
If the substrate mounting position is arranged on a movable moving mechanism and the positional relationship between the opposing capillary position and the torch can be maintained even if movable in the X and Y directions, the moving mechanism of the projection manufacturing apparatus can In order to perform the same function, it is included in the present invention. Furthermore, the capillary is installed in a moving mechanism that can move in the direction of the substrate, the capillary tip can be brought close to, in contact with, and detached from the substrate, and the capillary moving mechanism is also provided with a pressurizing mechanism. Even if it is given according to the above, it is possible to fulfill the same function.
[0094]
【The invention's effect】
As described above, according to the substrate manufacturing method of the present invention, it is possible to provide a manufacturing method in which the protrusions can be easily arranged at the connection portion of the input / output unit. Furthermore, according to the board | substrate of this invention, the board | substrate which can arrange | position a projection part easily to the connection part of an input-output part without producing the lack of a conductive ball can be provided. In addition, according to the projection manufacturing apparatus of the present invention, it is possible to provide a projection manufacturing apparatus that can easily form a projection in the connection portion of the input / output unit without causing a lack of conductive balls. . Furthermore, it is possible to provide a method for manufacturing a substrate that can suppress the loss of conductive balls, and thus a highly reliable substrate can be provided.
[Brief description of the drawings]
1 is a cross-sectional view showing a first step of a method for manufacturing a substrate in Example 1. FIG.
2 is a cross-sectional view showing a second step of the substrate manufacturing method of Example 1. FIG.
3 is a cross-sectional view showing a third step of the method for manufacturing the substrate in Example 1. FIG.
4 is a cross-sectional view showing a fourth step of the method for manufacturing the substrate in Example 1. FIG.
5 is a cross-sectional view showing a fifth step of the method of manufacturing a substrate in Example 1. FIG.
6 is a schematic view showing a substrate of Example 2. FIG.
FIG. 7 is a layout view showing a part of a protrusion manufacturing apparatus according to a third embodiment.
FIG. 8 is a schematic view illustrating a part of a protrusion manufacturing apparatus according to a third embodiment.
[Explanation of symbols]
1 Substrate
2 First page
3 Second side
4 Through hole
5 Wiring terminal
6 Metal wire
7 balls
9 Capillary
101 Substrate used in Example 2
102 Wiring pattern
201 Substrate mounting table
202 Torch
203 Clamp mechanism
205 Bonding head
206 Main unit
207 Y direction moving table
208 X-direction moving table
209 Bonding arm
210 Substrate placement position
212 spool

Claims (7)

基板の一方の面側から他方の面側に貫通する貫通孔と、基板の一方の面に形成された配線端子とを有する基板の貫通孔に、金属線の一端を、前記基板の一方の面側より挿入して前記基板の他方の面側に突出させ、その金属線の先端部にボールを形成する工程と、
該金属線のうち前記基板の一方の面側の所定部分を基板の一方の面に形成された配線端子に接続する工程と、
余剰金属線を切断除去する工程と、をこの順序で有することを特徴とする基板の製造方法。
One end of the metal wire is placed on one side of the substrate in the through hole of the substrate having a through hole penetrating from one surface side of the substrate to the other surface side and a wiring terminal formed on one surface of the substrate. Inserting from the side and projecting to the other side of the substrate, forming a ball at the tip of the metal wire; and
Connecting a predetermined portion on one surface side of the substrate of the metal wires to a wiring terminal formed on one surface of the substrate;
And a step of cutting and removing excess metal wires in this order.
少なくとも一方の面に配線端子を有する基板の一方の面から他方の面に貫通する貫通孔を形成する工程と、
キャピラリの先端に挿通された金属線の先端を、基板の一方の面側から貫通孔に挿入して前記他方の面側に突出させる工程と、
前記金属線の先端部にボールを形成する工程と、
前記キャピラリを上昇させる工程と、
前記キャピラリを基板の一方の面に配置される配線端子上に移動する工程と、
前記キャピラリを下降させ、該配線端子に金属線を押圧接合する工程と、
前記金属線の余剰金属線を切り離す工程と、をこの順序で有することを特徴とする基板の製造方法。
Forming a through-hole penetrating from one surface of the substrate having a wiring terminal on at least one surface to the other surface;
Inserting the tip of the metal wire inserted through the tip of the capillary into the through hole from one side of the substrate and projecting it to the other side;
Forming a ball at the tip of the metal wire;
Raising the capillary;
Moving the capillary onto a wiring terminal disposed on one side of the substrate;
Lowering the capillary and pressing and bonding a metal wire to the wiring terminal;
Separating the surplus metal wires of the metal wires in this order.
少なくとも一方の面に複数の配線端子を有し、かつ基板の一方の面から他方の面に貫通する複数の貫通孔が形成された基板において、金属線の一端を前記基板の一方の面側より該貫通穴に挿入して前記基板の他方の面側に突出させ、その金属線の先端部にボールを形成する工程と、
該金属線のうち前記基板の一方の面側の所定部分を基板の一方の面に形成された配線端子に電気的に接続する工程と、
余剰金属線を切断除去する工程と、をこの順序で複数回繰り返すことを特徴とする基板の製造方法。
In a substrate having a plurality of wiring terminals on at least one surface and having a plurality of through holes penetrating from one surface of the substrate to the other surface, one end of the metal wire is connected to one surface side of the substrate. Inserting into the through hole and projecting to the other surface side of the substrate, forming a ball at the tip of the metal wire; and
Electrically connecting a predetermined portion on one side of the substrate of the metal wires to a wiring terminal formed on one surface of the substrate;
And a step of cutting and removing the excess metal wire, and repeating the process a plurality of times in this order.
少なくとも一方の面に複数の配線端子を有し、かつ基板の一方の面から他方の面に貫通する複数の貫通孔が形成された基板において、キャピラリの先端に挿通された金属線の先端を、基板の一方の面側から貫通孔に挿入して前記他方の面側に突出させる工程と、
前記金属線の先端部にボールを形成する工程と、
前記キャピラリを上昇させる工程と、
前記キャピラリを基板の一方の面に配置される配線端子上に移動する工程と、
前記キャピラリを下降させ、該配線端子に金属線を押圧接合する工程と、
前記金属線の余剰金属線を切り離す工程と、をこの順序で複数回繰り返すことを特徴とする基板の製造方法。
In the substrate having a plurality of wiring terminals on at least one surface and having a plurality of through holes penetrating from one surface of the substrate to the other surface, the tip of the metal wire inserted through the tip of the capillary is Inserting into the through hole from one side of the substrate and projecting to the other side;
Forming a ball at the tip of the metal wire;
Raising the capillary;
Moving the capillary onto a wiring terminal disposed on one side of the substrate;
Lowering the capillary and pressing and bonding a metal wire to the wiring terminal;
The step of cutting off the excess metal wire of the metal wire is repeated a plurality of times in this order.
該金属線の先端部を溶融して前記ボールを形成することを特徴とする請求項1乃至請求項4のいずれかに記載の基板の製造方法。  The method for manufacturing a substrate according to claim 1, wherein the ball is formed by melting a tip portion of the metal wire. 請求項1乃至請求項5のいずれかに記載の基板の製造方法を用いて製造され、前記金属線の先端に球形のボールを有し、前記貫通孔からキャピラリ方向に引き伸ばされ、前記配線端子に弧を描いて前記金属線が接続されていることを特徴とする基板。A substrate is manufactured using the method for manufacturing a substrate according to any one of claims 1 to 5, and has a spherical ball at a tip of the metal wire, and is extended in a capillary direction from the through-hole. A substrate characterized in that the metal wires are connected in an arc . 基板を載置する基板載置台と、前記基板載置台の基板載置位置の一方の面側にキャピラリが配置され、さらに基板載置位置の他方の面側にトーチが配置され、
前記キャピラリは上下方向に揺動可能に支持されてなる突起製造装置であって、
前記キャピラリが保持する金属線を、前記基板の貫通孔に挿入し、前記基板から突出させた前記金属線の先端に前記トーチによりボールを形成し、
前記キャピラリを、上昇させ、前記基板上に設けられた配線端子上に移動し、
前記キャピラリを下降させ、前記配線端子に前記金属線を押圧接合することを特徴とする突起製造装置。
A substrate mounting table for mounting the substrate , a capillary is disposed on one surface side of the substrate mounting position of the substrate mounting table, and a torch is disposed on the other surface side of the substrate mounting position;
The capillary is a projection manufacturing apparatus supported so as to be swingable in the vertical direction,
The metal wire held by the capillary is inserted into the through hole of the substrate, and a ball is formed by the torch at the tip of the metal wire protruding from the substrate,
The capillary is raised and moved onto a wiring terminal provided on the substrate,
The protrusion manufacturing apparatus, wherein the capillary is lowered and the metal wire is pressed and joined to the wiring terminal .
JP07814698A 1998-03-25 1998-03-25 Substrate, substrate manufacturing method and projection manufacturing apparatus Expired - Fee Related JP3728918B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP07814698A JP3728918B2 (en) 1998-03-25 1998-03-25 Substrate, substrate manufacturing method and projection manufacturing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP07814698A JP3728918B2 (en) 1998-03-25 1998-03-25 Substrate, substrate manufacturing method and projection manufacturing apparatus

Publications (2)

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JPH11274354A JPH11274354A (en) 1999-10-08
JP3728918B2 true JP3728918B2 (en) 2005-12-21

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7371676B2 (en) * 2005-04-08 2008-05-13 Micron Technology, Inc. Method for fabricating semiconductor components with through wire interconnects
US7393770B2 (en) * 2005-05-19 2008-07-01 Micron Technology, Inc. Backside method for fabricating semiconductor components with conductive interconnects
JP4767004B2 (en) * 2005-11-30 2011-09-07 パナソニック株式会社 Method for forming printed circuit board conduction
US7307348B2 (en) 2005-12-07 2007-12-11 Micron Technology, Inc. Semiconductor components having through wire interconnects (TWI)
US7659612B2 (en) * 2006-04-24 2010-02-09 Micron Technology, Inc. Semiconductor components having encapsulated through wire interconnects (TWI)
SG150404A1 (en) 2007-08-28 2009-03-30 Micron Technology Inc Semiconductor assemblies and methods of manufacturing such assemblies
US7863722B2 (en) 2008-10-20 2011-01-04 Micron Technology, Inc. Stackable semiconductor assemblies and methods of manufacturing such assemblies

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