JPH11274354A - Substrate, method for manufacturing the same, and projection manufacturing device thereof - Google Patents

Substrate, method for manufacturing the same, and projection manufacturing device thereof

Info

Publication number
JPH11274354A
JPH11274354A JP10078146A JP7814698A JPH11274354A JP H11274354 A JPH11274354 A JP H11274354A JP 10078146 A JP10078146 A JP 10078146A JP 7814698 A JP7814698 A JP 7814698A JP H11274354 A JPH11274354 A JP H11274354A
Authority
JP
Japan
Prior art keywords
substrate
metal wire
capillary
ball
tip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10078146A
Other languages
Japanese (ja)
Other versions
JP3728918B2 (en
Inventor
Hidekazu Sato
英一 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP07814698A priority Critical patent/JP3728918B2/en
Publication of JPH11274354A publication Critical patent/JPH11274354A/en
Application granted granted Critical
Publication of JP3728918B2 publication Critical patent/JP3728918B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H01L2224/4501—Shape
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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a method for manufacturing a substrate, wherein a protruding part is easily allocated at a connection part of an input/output part of the substrate with no missing of conductive balls. SOLUTION: For the method for manufacturing substrate, a process where one end of a metal wire 6 is inserted into a through-hole 4 of a substrate 1 comprising the through-hole and a wiring terminal 5, for protrusion above the other surface of the substrate, and a ball 7 is formed at a tip part of the metal wire, a process in which a specified part on one surface side of the metal wire is connected to the wiring terminal 5, and a process where an excessive metal wire is cut and removed, are performed in this order.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、基板、基板の製造
方法及び突起製造装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate, a method for manufacturing a substrate, and an apparatus for manufacturing a projection.

【０００２】[0002]

【従来の技術】電子機器が小型化、軽量化、多機能化さ
れるのに伴い、それに使用する電子部品も同様に、小型
化、軽量化、多機能化されてきている。そのために、Ｂ
ＧＡ（Ｂａｌｌ Ｇｒｉｄ Ａｒｒｅｉ）パッケージ
や、フリップチップ接合を用いた半導体装置等の高密度
実装技術が開発されている。2. Description of the Related Art With the miniaturization, weight reduction, and multifunctionality of electronic devices, electronic components used therein have also been miniaturized, lightened, and multifunctional. Therefore, B
High-density mounting technologies such as a ball grid array (GA) package and a semiconductor device using flip chip bonding have been developed.

【０００３】ＢＧＡパッケージは、プリント配線基板
や、窒化アルミニウム等の高熱伝導性セラミックス更に
は、ポリイミド樹脂等の高耐熱樹脂等を用いた、配線基
板やパッケージ基材の入出力部分に、半田ボールや、は
んだメッキを施した銅ボール等で形成されたバンブを配
置し、これを溶融してパッケージの入出力部を配線基板
の端子に接続することを特徴とするものである。A BGA package uses a printed wiring board, a high thermal conductive ceramic such as aluminum nitride, and a high heat resistant resin such as a polyimide resin. A bump formed of a solder-plated copper ball or the like is arranged, melted, and the input / output portion of the package is connected to the terminal of the wiring board.

【０００４】上記のような技術の出現により、ＱＦＰ
（Ｑｕａｄ Ｆｌａｔ Ｐａｃｋａｇｅ）を用いてプリ
ント配線基板に接続するのに比較して、小型化が可能と
なっている。With the advent of the above technologies, QFP
(Quad Flat Package) enables miniaturization as compared with connecting to a printed wiring board.

【０００５】[0005]

【発明が解決しようとする課題】ところが、プリント配
線基板や、窒化アルミニウム等の高熱伝導性セラミック
ス更には、ポリイミド樹脂等の高耐熱樹脂等を用いた、
配線基板やパッケージ基材の入出力部分に、半田ボール
や半田メッキを施した銅ボール等の導電性ボールを配置
する技術として、特開平９−２２３７１２号公報の「従
来の技術」欄で述べられているごとく、搭載ヘッドで多
数個の導電性ボールをピックアップし、次いでこの搭載
ヘッドをワークの上方へ移動させ、そこで上下移動を行
わせて、多数個の導電性ボールをワークの電極に一括し
て搭載する方法、が知られているが、この特開平９−２
２３７１２号公報の、「発明が解決しようとする課題」
欄で述べられたごとく、導電性ボールの供給部において
搭載ヘッドに上下動さを行わせても、すべての吸着孔に
導電性ボールを真空吸着してピックアップできるとは限
らず、導電性ボールの欠落を生じやすい、という課題が
あった。However, printed wiring boards, high heat conductive ceramics such as aluminum nitride, and high heat resistant resins such as polyimide resins are used.
As a technique for arranging conductive balls such as solder balls and solder-plated copper balls on input / output portions of a wiring board or a package base material, it is described in the “Prior art” section of Japanese Patent Application Laid-Open No. 9-223712. As described above, a large number of conductive balls are picked up by the mounting head, and then the mounting head is moved above the work, where it is moved up and down, and the large number of conductive balls are collectively collected on the work electrodes. The mounting method is known.
No. 23712, “Problems to be solved by the invention”
As described in the column, even if the mounting head is moved up and down in the conductive ball supply section, it is not always possible to pick up the conductive balls by vacuum suction in all the suction holes. There was a problem that dropouts were likely to occur.

【０００６】そこで本発明はこのような課題を解決する
ためになされたものであり、基板の入出力部の接続部
に、導電性ボールの欠落を生じさせることなく容易に突
起部を配置可能な基板の製造方法及びこの方法によって
製造された基板を提供することを目的とする。Accordingly, the present invention has been made to solve such a problem, and a protrusion can be easily arranged at a connection portion of an input / output portion of a substrate without causing a conductive ball to be dropped. An object of the present invention is to provide a method of manufacturing a substrate and a substrate manufactured by the method.

【０００７】また、入出力部の接続部に、導電性ボール
の欠落を生じさせることなく容易に突起部を形成するこ
とのできる突起製造装置を提供することを目的とする。It is another object of the present invention to provide a projection manufacturing apparatus capable of easily forming a projection at a connection portion of an input / output portion without causing a conductive ball to drop.

【０００８】[0008]

【課題を解決するための手段】請求項１の基板の製造方
法は、基板の一方の面側から他方の面側に貫通する貫通
孔と、基板の一方の面に形成された配線端子とを有する
基板の貫通孔に、金属線の一端を、前記基板の一方の面
側より挿入して前記基板の他方の面側に突出させ、その
金属線の先端部にボールを形成する工程と、該金属線の
うち前記基板の一方の面側の所定部分を基板の一方の面
に形成された配線端子に接続する工程と、余剰金属線を
切断除去する工程と、をこの順序で有することを特徴と
する。According to a first aspect of the present invention, there is provided a method of manufacturing a substrate, comprising: forming a through hole penetrating from one surface side of the substrate to the other surface side; and a wiring terminal formed on one surface of the substrate. A step of inserting one end of a metal wire from one surface side of the substrate and projecting it to the other surface side of the substrate into a through hole of the substrate, and forming a ball at the tip of the metal wire; Connecting a predetermined portion of the metal wire on one surface side of the substrate to a wiring terminal formed on one surface of the substrate, and cutting and removing an excess metal wire in this order. And

【０００９】請求項２の基板の製造方法は、少なくとも
一方の面に配線端子を有する基板の一方の面から他方の
面に貫通する貫通孔を形成する工程と、キャピラリの先
端に挿通された金属線の先端を、基板の一方の面側から
貫通孔に挿入して前記他方の面側に突出させる工程と、
前記金属線の先端部にボールを形成する工程と、前記キ
ャピラリを上昇させる工程と、前記キャピラリを基板の
一方の面に配置される配線端子上に移動する工程と、前
記キャピラリを下降させ、該配線端子に金属線を押圧接
合する工程と、前記金属線の余剰金属線を切り離す工程
と、をこの順序で有することを特徴とする。According to a second aspect of the present invention, there is provided a method of manufacturing a substrate, comprising the steps of: forming a through hole penetrating from one surface to the other surface of a substrate having wiring terminals on at least one surface; A step of inserting the tip of the line into the through hole from one surface side of the substrate and projecting to the other surface side,
Forming a ball at the tip of the metal wire, raising the capillary, moving the capillary onto a wiring terminal disposed on one surface of the substrate, lowering the capillary, The method is characterized in that a step of pressing and joining a metal wire to a wiring terminal and a step of cutting off an excess metal wire of the metal wire are provided in this order.

【００１０】請求項３の基板の製造方法は、少なくとも
一方の面に複数の配線端子を有し、かつ基板の一方の面
から他方の面に貫通する複数の貫通孔が形成された基板
において、金属線の一端を前記基板の一方の面側より該
貫通穴に挿入して前記基板の他方の面側に突出させ、そ
の金属線の先端部にボールを形成する工程と、該金属線
のうち前記基板の一方の面側の所定部分を基板の一方の
面に形成された配線端子に電気的に接続する工程と、余
剰金属線を切断除去する工程と、をこの順序で複数回繰
り返すことを特徴とする。According to a third aspect of the present invention, in a substrate having a plurality of wiring terminals on at least one surface and a plurality of through holes penetrating from one surface of the substrate to the other surface, A step of inserting one end of a metal wire into the through hole from one surface side of the substrate so as to protrude toward the other surface side of the substrate, and forming a ball at the tip of the metal wire; A step of electrically connecting a predetermined portion on one surface side of the substrate to a wiring terminal formed on one surface of the substrate, and a step of cutting and removing excess metal wires are repeated a plurality of times in this order. Features.

【００１１】請求項４の基板の製造方法は、少なくとも
一方の面に複数の配線端子を有し、かつ基板の一方の面
から他方の面に貫通する複数の貫通孔が形成された基板
において、キャピラリの先端に挿通された金属線の先端
を、基板の一方の面側から貫通孔に挿入して前記他方の
面側に突出させる工程と、前記金属線の先端部にボール
を形成する工程と、前記キャピラリを上昇させる工程
と、前記キャピラリを基板の一方の面に配置される配線
端子上に移動する工程と、前記キャピラリを下降させ、
該配線端子に金属線を押圧接合する工程と、前記金属線
の余剰金属線を切り離す工程と、をこの順序で複数回繰
り返すことを特徴とする。According to a fourth aspect of the present invention, there is provided a substrate having a plurality of wiring terminals on at least one surface and a plurality of through holes penetrating from one surface of the substrate to the other surface. A step of inserting the tip of the metal wire inserted into the tip of the capillary into the through hole from one surface side of the substrate and projecting to the other surface side, and a step of forming a ball at the tip of the metal wire; Raising the capillary, moving the capillary onto a wiring terminal disposed on one surface of the substrate, and lowering the capillary;
The step of pressing and joining a metal wire to the wiring terminal and the step of cutting off an excess metal wire of the metal wire are repeated a plurality of times in this order.

【００１２】請求項５の基板の製造方法は、請求項１乃
至請求項４のいずれかに記載の基板の製造方法におい
て、金属線の先端部を溶融して前記ボールを形成するこ
とを特徴とする。According to a fifth aspect of the present invention, in the method of manufacturing a substrate according to any one of the first to fourth aspects, the ball is formed by melting a tip portion of a metal wire. I do.

【００１３】請求項１又は請求項２の基板の製造方法に
用いられる少なくとも基板の一方に配線パターンを有す
る基板の基板材料としては、ガラスエポキシ基板、石英
ガラス、ホウケイ酸ガラス、表面をシリカシートしたソ
ーダライムガラス、等の無機ガラス類、有機プラスチッ
クのフイルムまたはシート、アルミナ、炭化珪素等のセ
ラミックス類、シリコン基板等が好ましく用いられる。As the substrate material of the substrate having a wiring pattern on at least one of the substrates used in the method of manufacturing a substrate according to claim 1 or 2, a glass epoxy substrate, quartz glass, borosilicate glass, and a silica sheet on the surface are used. Inorganic glasses such as soda lime glass, films or sheets of organic plastics, ceramics such as alumina and silicon carbide, and silicon substrates are preferably used.

【００１４】基板は、まず、ドリル等の切削手段、研
削、プレスによるパンチング等の機械的手段、レーザ加
工、あるいは、異方性エッチング法、プラズマエッチン
グ等の穿孔手段を用いて基板の一方の面から、他方の面
に貫通する貫通孔を穿孔する。貫通孔の直径は１５μｍ
から４５０μｍ、望ましくは３０μｍから１２０μｍで
あり、後に説明する工程で用いる金属線の直径より大き
くさらに、形成するボール直径より小さい直径であり、
用いる金属線の直径の２倍以内であることが好ましい。The substrate is first formed on one side of the substrate using cutting means such as a drill, mechanical means such as grinding and punching by pressing, laser processing, or perforating means such as anisotropic etching and plasma etching. Then, a through hole penetrating the other surface is formed. The diameter of the through hole is 15 μm
To 450 μm, desirably 30 μm to 120 μm, which is larger than the diameter of the metal wire used in the process described later, and smaller than the diameter of the ball to be formed.
It is preferable that the diameter be within twice the diameter of the metal wire used.

【００１５】次に、金属線の一端を上記基板の一方の面
側から貫通穴に挿通して、基板の他方の面側に突出させ
る。Next, one end of the metal wire is inserted into the through hole from one surface side of the substrate and protrudes to the other surface side of the substrate.

【００１６】金属線は、金、銅等の金属や、金を含む合
金、銅を含む合金、さらには鉛錫、銀錫などの合金から
なる材料が用いられる。金属線の直径は、８μｍから４
００μｍ、望ましくは１５μｍから１２５μｍが好まし
い。The metal wire is made of a metal such as gold or copper, an alloy containing gold, an alloy containing copper, or a material made of an alloy such as lead tin or silver tin. The diameter of the metal wire ranges from 8 μm to 4
00 μm, preferably 15 μm to 125 μm.

【００１７】金属線は、キャピラリに挿通し、キャピラ
リに挿通された金属線の先端は、キャピラリ先端部より
突出した状態で、金属線の一端を基板の一方の面より貫
通孔内を通過し、他方の面に突出させる。The metal wire is inserted through the capillary, and one end of the metal wire passes through the through hole from one surface of the substrate while the tip of the metal wire inserted into the capillary projects from the capillary tip. Protrude to the other surface.

【００１８】次に、他方の面に突出させた金属線の先端
部を、電気トーチ、水素ガストーチ、水素ガスを含むガ
ストーチなどのトーチにより溶融することで、金属線の
先端にボールを形成する。Next, the tip of the metal wire protruding from the other surface is melted by a torch such as an electric torch, a hydrogen gas torch, or a gas torch containing hydrogen gas to form a ball at the tip of the metal wire.

【００１９】形成するボールの直径は、金属線直径の２
倍から３．８倍であるが、２．３倍から３．２倍である
ことがが好ましい。形成するボールの直径を２．３倍か
ら３．２倍の直径とすることで、安定したボール直径を
得ることが可能となり、さらに変形の少ないボール形成
が容易に行える。The diameter of the ball to be formed is two times the diameter of the metal wire.
The ratio is double to 3.8 times, and preferably 2.3 to 3.2 times. By setting the diameter of the ball to be formed to be 2.3 to 3.2 times the diameter, a stable ball diameter can be obtained, and a ball with less deformation can be easily formed.

【００２０】ボール形成を行った後、次の工程として、
金属線のうち基板の一方の面側の所定部分を基板の一方
の面に形成された配線端子に電気的に接続する。After ball formation, the next step is
A predetermined portion of the metal wire on one surface side of the substrate is electrically connected to a wiring terminal formed on one surface of the substrate.

【００２１】形成されたボールは、キャピラリを上昇さ
せることで、基板方向に引き付けられるが、ボール直径
が、基板を貫通する貫通穴の直径よりも大きく形成され
るために、穴部周囲に接触した状態となる。さらに、キ
ャピラリを上昇し、次にキャピラリを基板の一方の面に
配置される配線端子上に移動する。次にキャピラリを配
線端子方向に移動し近接させて、金属線と配線端子を接
触させ、さらに、キャピラリを押圧して、金属線と、配
線端子を電気的に接続する。この時キャピラリに超音波
振動を付与することにより、金属線と配線端子との接続
強度を増加させることができる。The formed ball is attracted in the direction of the substrate by raising the capillary. However, since the ball diameter is formed larger than the diameter of the through hole penetrating the substrate, the ball contacts the periphery of the hole. State. Further, the capillary is raised, and then the capillary is moved onto the wiring terminals arranged on one surface of the substrate. Next, the capillary is moved and approached in the direction of the wiring terminal to bring the metal wire and the wiring terminal into contact, and further, the capillary is pressed to electrically connect the metal wire and the wiring terminal. At this time, by applying ultrasonic vibration to the capillary, the connection strength between the metal wire and the wiring terminal can be increased.

【００２２】また、キャピラリを加熱して、金属線に伝
熱することで、金属線を加熱し接続を行うことにより、
金属線と配線端子との接続部強度を増加することも可能
である。さらに、超音波と金属線加熱とを併用しても同
様な効果を得ることができる。さらに併せて、接続時に
基板が加熱されていれば、さらに金属線と配線端子の接
続強度を確保し、接続時間を短縮するために効果的であ
る。Also, by heating the capillary and transferring heat to the metal wire, the metal wire is heated and connected,
It is also possible to increase the strength of the connection between the metal wire and the wiring terminal. Furthermore, the same effect can be obtained by using both ultrasonic waves and metal wire heating. In addition, if the substrate is heated at the time of connection, it is effective to further secure the connection strength between the metal wire and the wiring terminal and to shorten the connection time.

【００２３】金属線と、配線端子の接続を行った後、次
の工程として、キャピラリ側に残る余剰金属線を、接続
部とキャピラリとの間で切断除去することで、基板の一
方の面の配線端子と接続され、基板の他方の面に突出す
るボールを形成することができる。After the connection between the metal wire and the wiring terminal is performed, as a next step, the surplus metal wire remaining on the capillary side is cut and removed between the connection portion and the capillary, so that one surface of the substrate is removed. A ball connected to the wiring terminal and projecting from the other surface of the substrate can be formed.

【００２４】さらにこの工程を、複数回繰り返すことに
よって、突起電極を形成した本発明の基板は作成され
る。Further, by repeating this step a plurality of times, the substrate of the present invention having the protruding electrodes formed thereon is produced.

【００２５】請求項３又は請求項４の基板の製造方法に
用いられる少なくとも一方の面に複数の配線端子を有す
る基板の基板材料としては、ガラスエポキシ基板、石英
ガラス、ホウケイ酸ガラス、表面をシリカシートしたソ
ーダライムガラス、等の無機ガラス類、有機プラスチッ
クのフイルムまたはシート、アルミナ、炭化珪素等のセ
ラミックス類、シリコン基板等が好ましく用いられる。The substrate material used in the method for manufacturing a substrate according to the third or fourth aspect of the present invention, which has a plurality of wiring terminals on at least one surface, includes a glass epoxy substrate, quartz glass, borosilicate glass, and a silica Inorganic glasses such as sheet soda lime glass, etc., organic plastic films or sheets, ceramics such as alumina and silicon carbide, and silicon substrates are preferably used.

【００２６】基板は、ドリル等の切削手段、研削、プレ
スによるパンチング等の機械的手段、レーザ加工、ある
いは、異方性エッチング法、プラズマエッチング等の穿
孔手段を用いて少なくとも基板の入出力部の接続部に対
応する位置に、基板の一方の面から、他方の面に貫通す
る貫通孔を穿孔される。貫通孔の直径は１５μｍから４
５０μｍ、望ましくは３０μｍから１２０μｍであり、
後に説明する工程で用いる金属線の直径より大きくさら
に、形成するボール直径より小さい直径であり、用いる
金属線の直径の２倍以内であることが好ましい。The substrate is formed at least in the input / output portion of the substrate by using cutting means such as a drill, mechanical means such as grinding and punching by pressing, laser processing, or perforating means such as anisotropic etching and plasma etching. At a position corresponding to the connection portion, a through hole penetrating from one surface of the substrate to the other surface is formed. The diameter of the through-hole is from 15 μm to 4
50 μm, preferably 30 μm to 120 μm,
The diameter is preferably larger than the diameter of the metal wire used in the process described later and smaller than the diameter of the ball to be formed, and is preferably within twice the diameter of the metal wire used.

【００２７】上記のごとき基板を用いて、まず金属線の
一端を基板の一方の面側から貫通穴に挿通して、基板の
他方の面側に突出させる。Using the substrate as described above, first, one end of a metal wire is inserted from one surface side of the substrate into the through hole, and is projected to the other surface side of the substrate.

【００２８】金属線は、金、銅等の金属や、金を含む合
金、銅を含む合金、さらには鉛錫、銀錫などの合金から
なる材料が用いられる。金属線の直径は、８μｍから４
００μｍ、望ましくは１５μｍから１２５μｍが好まし
い。The metal wire is made of a metal such as gold or copper, an alloy containing gold, an alloy containing copper, or a material made of an alloy such as lead tin or silver tin. The diameter of the metal wire ranges from 8 μm to 4
00 μm, preferably 15 μm to 125 μm.

【００２９】金属線は、キャピラリに挿通し、キャピラ
リに挿通された金属線の先端は、キャピラリ先端部より
突出した状態で、金属線の一端を基板の一方の面より貫
通孔内を通過し、他方の面に突出させる。The metal wire is inserted through the capillary, and one end of the metal wire passes through the through hole from one surface of the substrate, with the tip of the metal wire inserted into the capillary protruding from the capillary tip. Protrude to the other surface.

【００３０】次に、他方の面に突出させた金属線の先端
部を、電気トーチ、水素ガストーチ、水素ガスを含むガ
ストーチなどのトーチにより溶融することで、金属線の
先端にボールを形成する。Next, the tip of the metal wire protruding from the other surface is melted by a torch such as an electric torch, a hydrogen gas torch, or a gas torch containing hydrogen gas to form a ball at the tip of the metal wire.

【００３１】形成するボールの直径は、金属線直径の２
倍から３．８倍であるが、２．３倍から３．２倍である
ことがが好ましい。形成するボールの直径を２．３倍か
ら３．２倍の直径とすることで、安定したボール直径を
得ることが可能となり、さらに変形の少ないボール形成
が容易に行える。The diameter of the ball to be formed is two times the diameter of the metal wire.
The ratio is double to 3.8 times, and preferably 2.3 to 3.2 times. By setting the diameter of the ball to be formed to be 2.3 to 3.2 times the diameter, a stable ball diameter can be obtained, and a ball with less deformation can be easily formed.

【００３２】ボール形成を行った後、次の工程として、
金属線のうち基板の一方の面側の所定部分を基板の一方
の面に形成された配線端子に電気的に接続する。After the ball formation, the next step is:
A predetermined portion of the metal wire on one surface side of the substrate is electrically connected to a wiring terminal formed on one surface of the substrate.

【００３３】形成されたボールは、キャピラリを上昇さ
せることで、基板方向に引き付けられるが、ボール直径
が、基板を貫通する貫通穴の直径よりも大きく形成され
るために、穴部周囲に接触した状態となる。さらに、キ
ャピラリを上昇し、次にキャピラリを基板の一方の面に
配置される配線端子上に移動する。次にキャピラリを配
線端子方向に移動し近接させて、金属線と配線端子を接
触させ、さらに、キャピラリを押圧して、金属線と、配
線端子を電気的に接続する。この時キャピラリに超音波
振動を付与することにより、金属線と配線端子との接続
強度を増加させることができる。The formed ball is attracted in the direction of the substrate by raising the capillary. However, since the ball diameter is formed larger than the diameter of the through hole penetrating the substrate, the ball contacts the periphery of the hole. State. Further, the capillary is raised, and then the capillary is moved onto the wiring terminals arranged on one surface of the substrate. Next, the capillary is moved and approached in the direction of the wiring terminal to bring the metal wire and the wiring terminal into contact, and further, the capillary is pressed to electrically connect the metal wire and the wiring terminal. At this time, by applying ultrasonic vibration to the capillary, the connection strength between the metal wire and the wiring terminal can be increased.

【００３４】また、キャピラリを加熱して、金属線に伝
熱することで、金属線を加熱し接続を行うことにより、
金属線と配線端子との接続部強度を増加することも可能
である。さらに、超音波と金属線加熱とを併用しても同
様な効果を得ることができる。さらに併せて、接続時に
基板が加熱されていれば、さらに金属線と配線端子の接
続強度を確保し、接続時間を短縮するために効果的であ
る。Also, by heating the capillary and transferring heat to the metal wire, the metal wire is heated and connected,
It is also possible to increase the strength of the connection between the metal wire and the wiring terminal. Furthermore, the same effect can be obtained by using both ultrasonic waves and metal wire heating. In addition, if the substrate is heated at the time of connection, it is effective to further secure the connection strength between the metal wire and the wiring terminal and to shorten the connection time.

【００３５】金属線と、配線端子の接続を行った後、次
の工程として、キャピラリ側に残る余剰金属線を接続部
と、キャピラリ間で切断除去することで、基板の一方の
面の配線端子と接続された、基板の他方の面に突出する
ボールを形成することができる。After the connection between the metal wires and the wiring terminals, as a next step, the surplus metal wires remaining on the capillary side are cut and removed between the connection portions and the capillaries, so that the wiring terminals on one surface of the substrate are removed. And a ball protruding from the other surface of the substrate, which is connected to the substrate, can be formed.

【００３６】さらにこの工程を、複数回繰り返すことに
よって、突起電極を形成した本発明の基板は作成され
る。Further, by repeating this step a plurality of times, the substrate of the present invention having the protruding electrodes formed thereon is produced.

【００３７】請求項６の基板は、請求項１乃至請求項５
のいずれかに記載の基板の製造方法を実施することによ
り製造される。The substrate according to claim 6 is the substrate according to claim 1 to claim 5.
The substrate is manufactured by performing the method for manufacturing a substrate according to any one of the above.

【００３８】基板に複数個の貫通穴を配置し、貫通穴の
全部もしくは選択的に請求項１乃至請求項５のいずれか
に記載の基板製造方法の実施による、基板に突出したボ
ールを有する基板が形成される。A substrate having a plurality of through holes formed in a substrate and having a ball protruding from the substrate by performing the method of manufacturing a substrate according to any one of claims 1 to 5 entirely or selectively. Is formed.

【００３９】上記基板の製造方法及びこの方法によって
製造された基板は、導電性ボールの欠落を生じさせるこ
となく容易に突起部を形成することのできるとともに、
ボール吸着ボール配置等の設備に比較して、安価に設備
化が可能であり、さらにボールの欠落検査を行わなくて
も良いという利点と、さらには信頼性の高い基板を提供
することができる。The method for manufacturing the substrate and the substrate manufactured by the method can easily form the projection without causing the conductive ball to be lost.
Compared with equipment such as a ball suction ball arrangement, it is possible to provide an advantage that the equipment can be inexpensively manufactured, that there is no need to perform a missing ball inspection, and that a highly reliable substrate can be provided.

【００４０】請求項７の突起製造装置は、基板載置位置
の一方の面側にキャピラリが配置され、さらに基板載置
位置の他方の面側にトーチが配置されてなることを特徴
とする。According to a seventh aspect of the present invention, in the projection manufacturing apparatus, a capillary is arranged on one side of the substrate mounting position, and a torch is arranged on the other side of the substrate mounting position.

【００４１】突起製造装置は、基板載置位置の一方の面
側にキャピラリが配置され、さらに基板載置位置の他方
の面側にトーチが配置されている。突起製造装置の構造
は、基板載置位置の一方の面側に、移動機構に接続され
たキャピラリと、金属線把握機構が配置される。さら
に、基板載置位置の他方の面側には電気トーチ、水素ガ
ストーチ、水素ガスを含むガストーチなどのトーチが配
置されている。In the projection manufacturing apparatus, a capillary is arranged on one side of the substrate mounting position, and a torch is arranged on the other side of the substrate mounting position. In the structure of the projection manufacturing apparatus, a capillary connected to a moving mechanism and a metal wire grasping mechanism are arranged on one surface side of the substrate mounting position. Furthermore, a torch such as an electric torch, a hydrogen gas torch, or a gas torch containing hydrogen gas is disposed on the other surface side of the substrate mounting position.

【００４２】キャピラリは、装置本体に対し、Ｘ方向移
動テーブル及びＹ方向移動テーブルを介して設置され
る。さらに、キャピラリは、基板方向に移動可能な、移
動機構に設置され、キャピラリ先端部が基板に近接、接
触、離脱可能となる。さらにキャピラリの移動機構には
加圧機構も備えられている。The capillary is installed on the apparatus main body via an X-direction moving table and a Y-direction moving table. Furthermore, the capillary is installed in a moving mechanism that can move in the direction of the substrate, and the tip of the capillary can approach, contact, and separate from the substrate. Further, the capillary moving mechanism also includes a pressurizing mechanism.

【００４３】相対するキャピラリ位置と、トーチの位置
関係が保持できれば、上記突起製造装置のＸ軸方向、Ｙ
軸方向の移動機構は、基板載置位置に付与しても同様の
機能を果たすことが可能である。If the relative position of the capillary and the position of the torch can be maintained, the X-axis direction and the Y-axis
The axial movement mechanism can perform the same function even when provided at the substrate mounting position.

【００４４】上記突起製造装置の基板載置位置に基板を
載置し、キャピラリに金属線を挿通する。金属線の直径
は、８μｍから４００μｍ、望ましくは１５μｍから１
２５μｍが好ましい。キャピラリに挿通された金属線の
先端は、キャピラリ先端部より突出した状態で、キャピ
ラリ移動機構の動作により、キャピラリ先端部が基板に
近接し、金属線の一端を基板の一方の面より貫通孔内を
通過し、他方の面に突出させる。A substrate is placed on the substrate placing position of the above-mentioned projection manufacturing apparatus, and a metal wire is inserted through the capillary. The diameter of the metal wire is 8 μm to 400 μm, preferably 15 μm to 1 μm.
25 μm is preferred. With the tip of the metal wire inserted into the capillary protruding from the capillary tip, the capillary moving mechanism operates such that the capillary tip approaches the substrate, and one end of the metal wire is inserted into the through hole from one surface of the substrate. And project to the other side.

【００４５】次に、他方の面に突出させた金属線の先端
部を、前述したトーチにより溶融することで、金属線の
先端にボールを形成する。Next, a ball is formed at the tip of the metal wire by melting the tip of the metal wire protruding from the other surface with the above-mentioned torch.

【００４６】ボール形成を行った後、次の工程として、
キャピラリを上昇させることで、ボールは、基板方向に
引き付けられるが、ボール直径が、基板を貫通する貫通
穴の直径よりも大きく形成されるために、穴部周囲に接
触した状態となる。さらに、キャピラリを，Ｘ方向移動
テーブル及びＹ方向移動テーブルを動作して、基板の一
方の面に配置される配線端子上に移動する。さらにキャ
ピラリを配線端子方向に移動し、金属線と配線端子を接
触させ、さらに、キャピラリを押圧して、金属線と、配
線端子を電気的に接続する。この時キャピラリに超音波
振動を付与することにより、金属線と配線パターンとの
接続強度を増加させることができる。After the ball formation, the next step is:
By raising the capillary, the ball is attracted in the direction of the substrate. However, since the ball diameter is formed larger than the diameter of the through hole penetrating the substrate, the ball comes into contact with the periphery of the hole. Further, the capillary is moved to a wiring terminal arranged on one surface of the substrate by operating the X-direction moving table and the Y-direction moving table. Further, the capillary is moved in the direction of the wiring terminal, the metal wire and the wiring terminal are brought into contact, and the capillary is pressed to electrically connect the metal wire and the wiring terminal. At this time, by applying ultrasonic vibration to the capillary, the connection strength between the metal wire and the wiring pattern can be increased.

【００４７】また、キャピラリを加熱して、金属線に伝
熱することで、金属線を加熱し接続を行うことにより、
金属線と配線端子との接続部強度を増加することも可能
である。さらに、超音波と金属線加熱とを併用しても同
様な効果を得ることができる。さらに併せて、接続時に
基板が加熱されていれば、さらに金属線と配線端子の接
続強度を確保し、接続時間を短縮するために効果的であ
る。Further, by heating the capillary and transferring heat to the metal wire, the metal wire is heated and connected,
It is also possible to increase the strength of the connection between the metal wire and the wiring terminal. Furthermore, the same effect can be obtained by using both ultrasonic waves and metal wire heating. In addition, if the substrate is heated at the time of connection, it is effective to further secure the connection strength between the metal wire and the wiring terminal and to shorten the connection time.

【００４８】次に、金属線と、配線端子を接続が終了し
た後、金属線をクランプ機構により保持し、キャピラリ
を基板から離脱することで、金属線は、配線パターンの
接続部より、キャピラリ方向で引き離し、余剰金属線を
切断除去することとなる。上記の工程により、基板の一
方の面の配線端子と接続された、基板の他方の面に突出
するボールを形成することができる。さらに複数個のボ
ール形成を行うためには、クランプ機構を金属線を保持
した状態で、キャピラリ方向に移動しクランプ機構によ
り保持した金属線をキャピラリ先端より突出させ、次の
ボール形成の準備をする工程も本発明に含まれる。Next, after the connection between the metal wire and the wiring terminal is completed, the metal wire is held by a clamp mechanism, and the capillary is separated from the substrate. And the excess metal wire is cut and removed. Through the above steps, a ball protruding from the other surface of the substrate connected to the wiring terminal on one surface of the substrate can be formed. In order to form a plurality of balls, the clamp mechanism is moved in the capillary direction while holding the metal wire, and the metal wire held by the clamp mechanism is projected from the tip of the capillary to prepare for the next ball formation. The steps are also included in the present invention.

【００４９】上記により入出力部の接続部に、容易に突
起部を形成することのできる突起製造装置を提供するこ
とが可能となる。As described above, it is possible to provide a projection manufacturing apparatus capable of easily forming a projection at a connection portion of an input / output section.

【００５０】[0050]

【発明の実施の形態】以下本発明の実施例について、図
面を参照して説明する。Embodiments of the present invention will be described below with reference to the drawings.

【００５１】（実施例１）図１は実施例１の基板の製造
方法の第一の工程を示す断面図である。第一の工程は基
板１の一方の面である第一面２から、基板１の他方の面
である第二面３に貫通する貫通孔４を形成する工程であ
る。第１面には、銅箔表面にニッケルメッキを施しさら
に、ニッケルメッキ表面に金メッキを施した配線端子５
が配置される。(Embodiment 1) FIG. 1 is a sectional view showing a first step of a method for manufacturing a substrate according to Embodiment 1. The first step is a step of forming a through hole 4 penetrating from the first surface 2 which is one surface of the substrate 1 to the second surface 3 which is the other surface of the substrate 1. On the first surface, a wiring terminal 5 having a copper foil surface plated with nickel and a nickel plating surface plated with gold.
Is arranged.

【００５２】図２は実施例１の基板の製造方法の第二の
工程を示す断面図である。第二の工程は図２の（ａ）に
示すごとく金属線６の一端を基板１の第一面２側より貫
通孔４に挿入し、さらに図２の（ｂ）に示すごとく貫通
孔４を通過させ、第２面３側に突出させる工程である。FIG. 2 is a sectional view showing a second step of the method for manufacturing a substrate according to the first embodiment. In the second step, one end of the metal wire 6 is inserted into the through hole 4 from the first surface 2 side of the substrate 1 as shown in FIG. 2A, and the through hole 4 is further inserted as shown in FIG. This is a step of allowing the light to pass through and project to the second surface 3 side.

【００５３】図３は実施例１の基板の製造方法の第三の
工程を示す断面図である。第三の工程は、図３の（ｃ）
に示すごとく基板１の第二面３に突出させられた金属線
６の先端部にボール７を形成し、さらに、図３の（ｄ）
に示すごとくボール７を基板１の、第二面３に近接させ
るる工程である。FIG. 3 is a sectional view showing a third step of the method for manufacturing a substrate according to the first embodiment. The third step is shown in FIG.
As shown in FIG. 3, a ball 7 is formed at the tip of the metal wire 6 protruding from the second surface 3 of the substrate 1, and furthermore, FIG.
This is a step of bringing the ball 7 close to the second surface 3 of the substrate 1 as shown in FIG.

【００５４】図４は実施例１の基板の製造方法の第四の
工程を示す断面図である。第四の工程は、図４の（ｅ）
および（ｆ）に示すごとく金属線６のうち基板１の第一
面２側の所定部分を基板１の第一面２に形成された配線
端子５に電気的に接続する工程である。FIG. 4 is a sectional view showing a fourth step of the method for manufacturing a substrate according to the first embodiment. The fourth step is as shown in FIG.
And (f) electrically connecting a predetermined portion of the metal wire 6 on the first surface 2 side of the substrate 1 to the wiring terminal 5 formed on the first surface 2 of the substrate 1.

【００５５】図５は実施例１の基板の製造方法の第五の
工程を示す断面図である。第五の工程は、配線端子５に
電気的に接続された金属線６の、余剰金属線を切断する
工程である。FIG. 5 is a sectional view showing a fifth step of the method for manufacturing a substrate according to the first embodiment. The fifth step is a step of cutting excess metal wires of the metal wires 6 electrically connected to the wiring terminals 5.

【００５６】図１、図２、図３、図４及び図５を用いて
以下に、さらに詳しく説明する。This will be described in more detail below with reference to FIGS. 1, 2, 3, 4 and 5.

【００５７】実施例１の第一の工程において、基板１の
基板材料には、ガラスエポキシ系配線基板を用い、レー
ザ加工法による穿孔手段を用いて貫通孔４を穿孔する。
貫通孔４の直径は４５μｍとした。In the first step of the first embodiment, a glass epoxy wiring board is used as the substrate material of the substrate 1, and the through-holes 4 are punched using a punching means by a laser processing method.
The diameter of the through hole 4 was 45 μm.

【００５８】次に第二の工程においては、金属線６の材
質は、ワイヤーボンディングで用いられるボンディング
ワイヤの金線を用い、直径は３０μｍの直径の金線を用
いた。金属線６は、図２（ａ）に示すごとく、キャピラ
リ９に挿通し、キャピラリ９先端部より金属線６の先端
を突出させる。次に図２（ｂ）に示すごとく、基板１の
第一面２から、第二面３に貫通する貫通孔４内を通過
し、第二面３に突出させる。Next, in the second step, as the material of the metal wire 6, a gold wire of a bonding wire used in wire bonding was used, and a gold wire having a diameter of 30 μm was used. As shown in FIG. 2A, the metal wire 6 is inserted into the capillary 9 so that the tip of the metal wire 6 protrudes from the tip of the capillary 9. Next, as shown in FIG. 2B, the substrate 1 passes through the through hole 4 penetrating the second surface 3 from the first surface 2 and protrudes from the second surface 3.

【００５９】さらに第三の工程においては、図３（ｃ）
に示すごとく、基板１の第二の面３に突出した金属線６
の先端部に、ボール７を形成する。ボール７の直径は８
４μｍである。次に図３（ｄ）に示すごとく、キャピラ
リ９を基板１から離すことにより、ボール７は基板１
の、第２面３に近接する。In the third step, FIG.
As shown in the figure, the metal wire 6 protruding from the second surface 3 of the substrate 1
The ball 7 is formed at the tip of the. The diameter of the ball 7 is 8
4 μm. Next, as shown in FIG. 3D, the ball 7 is separated from the substrate 1 by separating the capillary 9 from the substrate 1.
In the vicinity of the second surface 3.

【００６０】さらに第四の工程においては、図４（ｅ）
に示すごとくキャピラリ９を基板１の一方の面２に配置
される配線端子５上に移動する。Further, in the fourth step, FIG.
The capillary 9 is moved onto the wiring terminals 5 arranged on one surface 2 of the substrate 1 as shown in FIG.

【００６１】次に図４（ｆ）に示すごとくキャピラリ９
を配線端子５方向に移動し近接させて、金属線６と配線
端子５を接触させ、さらに、キャピラリ９を押圧して、
金属線６と配線端子５を電気的に接続する。さらに第五
の工程において、次に図５に示すごとく、キャピラリ９
側に残る余剰の金属線６を、接続部とキャピラリ９間で
切断除去することで、基板１の第一面２の配線端子５と
接続された基板１の第二面３に突出するボールを形成す
ることができる。Next, as shown in FIG.
Is moved in the direction of the wiring terminal 5 and brought close to the wiring terminal 5, the metal wire 6 is brought into contact with the wiring terminal 5, and further, the capillary 9 is pressed,
The metal wires 6 and the wiring terminals 5 are electrically connected. Further, in the fifth step, as shown in FIG.
The surplus metal wire 6 remaining on the side is cut and removed between the connection portion and the capillary 9 so that the ball projecting from the second surface 3 of the substrate 1 connected to the wiring terminal 5 on the first surface 2 of the substrate 1 Can be formed.

【００６２】さらにこれらの工程を、突起電極を形成す
べき箇所の回数繰り返すことによって、突起電極を形成
した本発明の基板は作成される。Further, these steps are repeated the number of times where the protruding electrodes are to be formed, whereby the substrate of the present invention on which the protruding electrodes are formed is produced.

【００６３】（実施例２）図６は実施例２の基板を示す
概略図である。(Embodiment 2) FIG. 6 is a schematic view showing a substrate of Embodiment 2.

【００６４】実施例２において、基板１０１の基板材料
には、ポリイミド樹脂基板を用い、レーザ加工法による
穿孔手段を用いて、基板１０１の入出力部の接続部に対
応する位置に、複数の貫通孔４を穿孔する。基板１０１
の第１面２には、入出力部に対応する配線端子５が配置
され、それぞれの配線端子５は、配線パターン１０２に
より図示しない外部接続電極へ接続されている。In the second embodiment, a polyimide resin substrate is used as the substrate material of the substrate 101, and a plurality of through-holes are formed at positions corresponding to the connection portions of the input / output portions of the substrate 101 by using a punching means formed by a laser processing method. Hole 4 is drilled. Substrate 101
On the first surface 2, wiring terminals 5 corresponding to input / output units are arranged, and each wiring terminal 5 is connected to an external connection electrode (not shown) by a wiring pattern 102.

【００６５】貫通孔４の直径は３０μｍとした。次に第
一の工程においては、金属線６の材質は、ワイヤーボン
ディングで用いられるボンディングワイヤの金線を用
い、直径は２５μｍの直径の金線を用いた。金属線６
は、キャピラリ９に挿通し、キャピラリ９先端部より金
属線６の先端を突出させる。次に基板１０１の第一面２
から、前記第二面３に貫通する貫通孔４内を通過し、第
二面３に突出させる。The diameter of the through hole 4 was 30 μm. Next, in the first step, as a material of the metal wire 6, a gold wire of a bonding wire used in wire bonding was used, and a gold wire having a diameter of 25 μm was used. Metal wire 6
Is inserted through the capillary 9 so that the tip of the metal wire 6 projects from the tip of the capillary 9. Next, the first surface 2 of the substrate 101
From the through hole 4 penetrating through the second surface 3 and protruding from the second surface 3.

【００６６】さらに第二の工程においては基板１０１の
第二の面３に突出した金属線６の先端部に、ボール７を
形成する。ボール７の直径は７８μｍである。次にキャ
ピラリ９を基板１０１から離すことにより、ボール７は
基板１０１の、第２面３に近接する。Further, in the second step, a ball 7 is formed at the tip of the metal wire 6 protruding from the second surface 3 of the substrate 101. The diameter of the ball 7 is 78 μm. Next, by separating the capillary 9 from the substrate 101, the ball 7 approaches the second surface 3 of the substrate 101.

【００６７】さらに第三の工程においては、キャピラリ
９を基板１０１の第一面２に配置される配線端子５上に
移動する。In the third step, the capillary 9 is moved onto the wiring terminals 5 arranged on the first surface 2 of the substrate 101.

【００６８】次に第四の工程においては、キャピラリ９
を配線端子５方向に移動し近接させて、金属線６と配線
端子５を接触させ、さらに、キャピラリ９を押圧して、
金属線６と配線端子５を電気的に接続する。Next, in the fourth step, the capillary 9
Is moved in the direction of the wiring terminal 5 and brought close to the wiring terminal 5, the metal wire 6 is brought into contact with the wiring terminal 5, and further, the capillary 9 is pressed,
The metal wires 6 and the wiring terminals 5 are electrically connected.

【００６９】次に第五の工程においては、キャピラリ９
側に残る余剰の金属線を、接続部とキャピラリ間で切断
除去することで、基板１０１の第一面２の配線端子５と
接続された基板１０１の第二面に突出するボールを形成
することができる。Next, in the fifth step, the capillary 9
Forming a ball projecting from the second surface of the substrate 101 connected to the wiring terminal 5 on the first surface 2 of the substrate 101 by cutting and removing excess metal wire remaining on the side between the connection portion and the capillary. Can be.

【００７０】さらにこの工程を、突起電極を形成すべき
箇所の回数繰り返すことによって、突起電極を形成した
本発明の基板は作成される。Further, by repeating this process the number of times where the protruding electrode is to be formed, the substrate of the present invention on which the protruding electrode is formed is produced.

【００７１】（実施例３）図７は、実施例３に係る突起
製造装置の一部を示す配置図である。(Embodiment 3) FIG. 7 is a layout view showing a part of a projection manufacturing apparatus according to Embodiment 3.

【００７２】基板載置台２０１と、キャピラリ９と、ト
ーチ２０２を有する。基板載置台２０１の、基板載置位
置２１０の上方にキャピラリ９を配置し、さらに基板載
置台２０１の下方にトーチ２０２を配置した。キャピラ
リ９の上方には金属線６のクランプ機構２０３が配置さ
れる。The apparatus has a substrate mounting table 201, a capillary 9, and a torch 202. The capillary 9 was disposed above the substrate mounting position 210 of the substrate mounting table 201, and the torch 202 was further disposed below the substrate mounting table 201. A clamp mechanism 203 for the metal wire 6 is arranged above the capillary 9.

【００７３】図８は、実施例３に係る突起製造装置の一
部を示す概略図である。FIG. 8 is a schematic view showing a part of the projection manufacturing apparatus according to the third embodiment.

【００７４】突起製造装置装置２００は、ボンディング
ヘッド２０５が、装置本体２０６に対し、Ｘ方向移動テ
ーブル２０７及びＹ方向移動テーブル２０８を介して設
置され、このボンディングヘッド２０５にボンディング
アーム２０９を介してキャピラリ９が固着される。さら
にボンディングヘッド２０５にトーチ２０２が配置さ
れ、また、基板載置台２０１は、装置本体２０６に固定
されている。基板載置台２０１に対するキャピラリ９と
トーチ２０２の位置関係は、基板載置台２０１の、基板
載置位置２１０の上方にキャピラリ９を配置し、さらに
基板載置位置の下方にトーチ２０２を配置した。In the projection manufacturing apparatus 200, a bonding head 205 is installed on an apparatus main body 206 via an X-direction moving table 207 and a Y-direction moving table 208, and the bonding head 205 is connected to the capillary via a bonding arm 209. 9 is fixed. Further, a torch 202 is disposed on the bonding head 205, and the substrate mounting table 201 is fixed to the apparatus main body 206. Regarding the positional relationship between the capillary 9 and the torch 202 with respect to the substrate mounting table 201, the capillary 9 is arranged above the substrate mounting position 210 of the substrate mounting table 201, and the torch 202 is further arranged below the substrate mounting position.

【００７５】図７及び図８を用いて本発明に係る突起製
造装置の実施例について説明する。An embodiment of the projection manufacturing apparatus according to the present invention will be described with reference to FIGS.

【００７６】Ｘ方向移動テーブル２０７は、図示しない
Ｘ方向駆動機構によりボンディングヘッド２０５をＸ方
向に移動できる。また、Ｙ方向移動テーブル２０８は、
図示しないＹ方向駆動機構によりボンディングヘッド２
０５をＹ方向に移動できる。The X direction moving table 207 can move the bonding head 205 in the X direction by an X direction driving mechanism (not shown). In addition, the Y-direction moving table 208
The bonding head 2 is driven by a Y-direction driving mechanism (not shown).
05 can be moved in the Y direction.

【００７７】ボンディングアーム２０９はボンディング
ヘッド２０５に対し鉛直方向に揺動可能に支持され、図
示しないボンディングアーム駆動機構により駆動する。
トーチ２０２は、ボンディングヘッド２０５に対して水
平方向に揺動可能に構成される。The bonding arm 209 is swingably supported in the vertical direction with respect to the bonding head 205, and is driven by a bonding arm driving mechanism (not shown).
The torch 202 is configured to swing horizontally with respect to the bonding head 205.

【００７８】キャピラリ９と、トーチ２０２は、装置本
体２０６に固定されている基板載置台２０１の基板配置
位置２１０を挟み対向して配置され、基板載置台２０１
に対するキャピラリ９とトーチ２０２の位置関係は、基
板載置台２０１の、基板載置位置２１０の上方にキャピ
ラリ９を配置し、さらに基板載置位置２１０の下方にト
ーチ２０２を配置した。The capillary 9 and the torch 202 are arranged to face each other with the substrate mounting position 210 of the substrate mounting table 201 fixed to the apparatus main body 206 interposed therebetween.
As for the positional relationship between the capillary 9 and the torch 202 with respect to, the capillary 9 is disposed above the substrate mounting position 210 of the substrate mounting table 201, and the torch 202 is further disposed below the substrate mounting position 210.

【００７９】金属線６は、金属線６を巻き付けたスプー
ル２１１より供給され、図示しないワイヤ案内板に案内
され、クランプ機構２０３間を通ってキャピラリ９へ導
かれ、キャピラリ９に金属線６が挿通される。また、ト
ーチ２０２の先端にはトーチ電極２１２が形成されてい
る。The metal wire 6 is supplied from a spool 211 around which the metal wire 6 is wound, guided by a wire guide plate (not shown), guided between the clamp mechanisms 203 to the capillary 9, and inserted into the capillary 9. Is done. A torch electrode 212 is formed at the tip of the torch 202.

【００８０】上記のごとき構成の突起製造装置２００の
動作について、さらに詳しく説明する。The operation of the projection manufacturing apparatus 200 having the above configuration will be described in more detail.

【００８１】スプール２１１より供給された金属線６は
図示しないワイヤ案内板に案内され、クランプ機構２０
３間を通ってキャピラリ９へ導かれ、キャピラリ９に金
属線６が挿通される。The metal wire 6 supplied from the spool 211 is guided by a wire guide plate (not shown),
The capillary wire 9 is guided to the capillary 9 through the space 3, and the metal wire 6 is inserted through the capillary 9.

【００８２】キャピラリ９を、貫通穴に照準を合わせる
ように、Ｘ方向移動テーブル２０７及びＹ方向移動テー
ブル２０８を移動させて、位置決めする。The X-direction moving table 207 and the Y-direction moving table 208 are moved and positioned so that the capillary 9 is aimed at the through hole.

【００８３】次に金属線６をクランプ機構２０３により
把握し、ボンディングアーム２０９を下降することによ
り、キャピラリ２０２の先端に挿通された金属線６の先
端を、基板１の第一面２から、第二面３に貫通する貫通
孔４内を通過し、第二面３に突出させる。Next, the metal wire 6 is grasped by the clamp mechanism 203 and the bonding arm 209 is lowered, so that the tip of the metal wire 6 inserted through the tip of the capillary 202 is moved from the first surface 2 of the substrate 1 to the It passes through the through hole 4 penetrating the two surfaces 3 and protrudes from the second surface 3.

【００８４】つぎに金属線６の先端とトーチ２０３間
に、放電による電気スパークを発生させ、金属線６の先
端にボール７を形成する。Next, an electric spark is generated by electric discharge between the tip of the metal wire 6 and the torch 203, and the ball 7 is formed at the tip of the metal wire 6.

【００８５】ボール形成を行った後、クランプ機構２０
３による金属線６の把握を解除し、キャピラリ９を上昇
させることで、ボール７は、基板方向に引き付けられ
る。ボール７の直径は基板を貫通する貫通穴４の直径よ
りも大きく形成されるために、ボール７が、貫通穴４の
穴部周囲に接触した状態となる。After forming the ball, the clamping mechanism 20
By releasing the grasp of the metal wire 6 by 3 and raising the capillary 9, the ball 7 is attracted toward the substrate. Since the diameter of the ball 7 is formed larger than the diameter of the through hole 4 penetrating the substrate, the ball 7 comes into contact with the periphery of the hole of the through hole 4.

【００８６】キャピラリ９を上昇させた後キャピラリ９
を、配線端子５の接続位置に照準を合わせるように、Ｘ
方向移動テーブル２０７及びＹ方向移動テーブル２０８
を配線端子５上に移動する。After raising the capillary 9, the capillary 9
Is adjusted so as to aim at the connection position of the wiring terminal 5.
Direction moving table 207 and Y direction moving table 208
Is moved onto the wiring terminal 5.

【００８７】この後再びボンディングアーム２０９を下
降することにで、キャピラリ９を下降させ、金属線６と
配線端子５を接触させ、さらに、キャピラリ９により金
属線６を配線端子５に押しつけ、金属線６を変形させな
がら金属線６と配線端子５を、電気的に接続する。接続
時キャピラリ９に超音波振動を付与することにより、金
属線６と配線端子５との接続強度を増加させることがで
きる。Thereafter, by lowering the bonding arm 209 again, the capillary 9 is lowered to bring the metal wire 6 into contact with the wiring terminal 5, and further, the metal wire 6 is pressed against the wiring terminal 5 by the capillary 9. The metal wire 6 and the wiring terminal 5 are electrically connected while deforming the metal wire 6. By applying ultrasonic vibration to the capillary 9 at the time of connection, the connection strength between the metal wire 6 and the wiring terminal 5 can be increased.

【００８８】その後、キャピラリ９を配線端子５上の接
続部より上昇させ、予め設定した把握位置で、金属線６
をクランプ機構２０３により把握し、さらにキャピラリ
９を上昇させる。金属線６はクランプ機構２０３により
把握されているために、キャピラリ９から送り出され
ず、金属線６と配線端子５の接続部に引っ張り力がかか
り、余剰となる金属線を接続部より切断し引き離すこと
ができる。さらにボンディングアーム２０９を上昇し、
停止点である定位置に戻すことで、一回の動作を終了
し、基板の第１面２の配線端子５と接続された基板の第
２面３に突出するボール７を形成することが可能とな
り、一つの突起電極が形成される。Thereafter, the capillary 9 is raised from the connection portion on the wiring terminal 5 and the metal wire 6 is moved to a predetermined grasping position.
Is grasped by the clamp mechanism 203, and the capillary 9 is further raised. Since the metal wire 6 is grasped by the clamp mechanism 203, the metal wire 6 is not sent out from the capillary 9, and a tensile force is applied to the connection between the metal wire 6 and the wiring terminal 5, so that the surplus metal wire is cut and separated from the connection. Can be. Then raise the bonding arm 209,
By returning to the fixed position which is the stop point, one operation can be completed, and the ball 7 projecting from the second surface 3 of the substrate connected to the wiring terminal 5 on the first surface 2 of the substrate can be formed. And one protruding electrode is formed.

【００８９】この動作を、突起電極を形成すべき箇所の
回数繰り返すことによって、突起電極を形成した、本発
明の基板は作成される。By repeating this operation the number of times where the protruding electrodes are to be formed, the substrate of the present invention having the protruding electrodes formed thereon is produced.

【００９０】ボール７の直径は、金属線６の先端と、ト
ーチ２０３間の電気スパーク時の電流値、放電時間量に
より変化させることが可能となるが、金属線６の太さの
１．５倍から３．５倍の直径を確保できるように調整す
べきである。The diameter of the ball 7 can be changed depending on the current value and the discharge time at the time of electric spark between the tip of the metal wire 6 and the torch 203. It should be adjusted so that a diameter of 2 to 3.5 times can be secured.

【００９１】また、キャピラリを加熱して、金属線に伝
熱することで、金属線を加熱し接続を行うことにより、
金属線と配線端子との接続部強度を増加することも可能
である。さらに、超音波と金属線加熱とを併用しても同
様な効果を得ることができる。さらに併せて、接続時に
基板が加熱されていれば、さらに金属線と配線端子の接
続強度を確保し、接続時間を短縮するために効果的であ
る。Also, by heating the capillary and conducting heat to the metal wire, the metal wire is heated and connected,
It is also possible to increase the strength of the connection between the metal wire and the wiring terminal. Furthermore, the same effect can be obtained by using both ultrasonic waves and metal wire heating. In addition, if the substrate is heated at the time of connection, it is effective to further secure the connection strength between the metal wire and the wiring terminal and to shorten the connection time.

【００９２】さらに複数個のボール形成を行うために
は、クランプ機構を金属線を保持した状態で、キャピラ
リ方向に移動しクランプ機構により保持した金属線をキ
ャピラリ先端より突出させ、次のボール形成の準備をす
る工程も本発明に含まれる。In order to form a plurality of balls, the clamp mechanism is moved in the capillary direction while holding the metal wire, and the metal wire held by the clamp mechanism is protruded from the tip of the capillary to form the next ball. The step of preparing is also included in the present invention.

【００９３】基板載置位置が、移動可能な移動機構上に
配置され、Ｘ方向、Ｙ方向に移動可能であっても相対す
るキャピラリ位置と、トーチの位置関係が保持できれ
ば、上記突起製造装置の移動機構は、同様の機能を果た
すため、本発明に含まれる。さらに、キャピラリが、基
板方向に移動可能な、移動機構に設置され、キャピラリ
先端部が基板に近接、接触、離脱可能となり、さらにキ
ャピラリの移動機構には加圧機構も備えられおり、キャ
ピラリ移動機構にあわせて付与しても同様の機能を果た
すことが可能である。The substrate mounting position is arranged on a movable moving mechanism. Even if the substrate mounting position can be moved in the X and Y directions, if the relative position of the capillary and the position of the torch can be maintained, the above-described projection manufacturing apparatus can be used. The moving mechanism is included in the present invention because it performs a similar function. In addition, the capillary is installed in a moving mechanism that can move in the direction of the substrate, and the tip of the capillary can approach, contact, and separate from the substrate. In addition, the capillary moving mechanism has a pressing mechanism, and the capillary moving mechanism The same function can be achieved even if the information is provided in accordance with.

【００９４】[0094]

【発明の効果】以上述べたように、本発明の基板の製造
方法によれば、入出力部の接続部に、容易に突起部を配
置可能な製造方法を提供することができる。さらに本発
明の基板によれば、入出力部の接続部に、導電性ボール
の欠落を生じさせることなく容易に突起部を配置可能な
基板を提供することができる。また、本発明の突起製造
装置によれば、入出力部の接続部に、導電性ボールの欠
落を生じさせることなく容易に突起部を形成することの
可能な突起製造装置を提供することができる。さらに、
導電性ボールの欠落を抑えることの可能な基板の製造方
法を提供することが可能となり、よって信頼性の高い基
板を提供することができる。As described above, according to the method for manufacturing a substrate of the present invention, it is possible to provide a manufacturing method in which a projection can be easily arranged at a connection portion of an input / output portion. Further, according to the substrate of the present invention, it is possible to provide a substrate on which the protrusions can be easily arranged without causing the conductive balls to be missing at the connection portions of the input / output portions. Further, according to the projection manufacturing apparatus of the present invention, it is possible to provide a projection manufacturing apparatus capable of easily forming a projection at a connection portion of an input / output section without causing a drop of a conductive ball. . further,
It is possible to provide a method for manufacturing a substrate that can suppress the loss of the conductive ball, and thus a highly reliable substrate can be provided.

【図面の簡単な説明】[Brief description of the drawings]

【図１】 実施例１の基板の製造方法の第一の工程を示
す断面図である。FIG. 1 is a cross-sectional view illustrating a first step of a method for manufacturing a substrate according to a first embodiment.

【図２】 実施例１の基板の製造方法の第二の工程を示
す断面図である。FIG. 2 is a cross-sectional view illustrating a second step of the method for manufacturing a substrate according to the first embodiment.

【図３】 実施例１の基板の製造方法の第三の工程を示
す断面図である。FIG. 3 is a sectional view illustrating a third step of the method for manufacturing a substrate according to the first embodiment;

【図４】 実施例１の基板の製造方法の第四の工程を示
す断面図である。FIG. 4 is a sectional view illustrating a fourth step of the method for manufacturing a substrate according to the first embodiment;

【図５】 実施例１の基板の製造方法の第五の工程を示
す断面図である。FIG. 5 is a cross-sectional view showing a fifth step of the method for manufacturing a substrate according to the first embodiment.

【図６】 実施例２の基板を示す概略図である。FIG. 6 is a schematic view illustrating a substrate according to a second embodiment.

【図７】 実施例３に係る突起製造装置の一部を示す配
置図である。FIG. 7 is a layout view illustrating a part of a projection manufacturing apparatus according to a third embodiment.

【図８】 実施例３に係る突起製造装置の一部を示す概
略図である。FIG. 8 is a schematic view illustrating a part of a projection manufacturing apparatus according to a third embodiment.

【符号の説明】[Explanation of symbols]

１ 基板 ２ 第一面 ３ 第二面 ４ 貫通孔 ５ 配線端子 ６ 金属線 ７ ボール ９ キャピラリ １０１ 実施例２に用いられる基板 １０２ 配線パターン ２０１ 基板載置台 ２０２ トーチ ２０３ クランプ機構 ２０５ ボンディングヘッド ２０６ 装置本体 ２０７ Ｙ方向移動テーブル ２０８ Ｘ方向移動テーブル ２０９ ボンディングアーム ２１０ 基板載置位置 ２１２ スプール DESCRIPTION OF SYMBOLS 1 Substrate 2 1st surface 3 2nd surface 4 Through hole 5 Wiring terminal 6 Metal wire 7 Ball 9 Capillary 101 Substrate 102 used for Example 2 Wiring pattern 201 Substrate mounting table 202 Torch 203 Clamp mechanism 205 Bonding head 206 Device main body 207 Y direction moving table 208 X direction moving table 209 Bonding arm 210 Substrate mounting position 212 Spool

Claims (7)

【特許請求の範囲】[Claims] 【請求項１】基板の一方の面側から他方の面側に貫通す
る貫通孔と、基板の一方の面に形成された配線端子とを
有する基板の貫通孔に、金属線の一端を、前記基板の一
方の面側より挿入して前記基板の他方の面側に突出さ
せ、その金属線の先端部にボールを形成する工程と、 該金属線のうち前記基板の一方の面側の所定部分を基板
の一方の面に形成された配線端子に接続する工程と、 余剰金属線を切断除去する工程と、をこの順序で有する
ことを特徴とする基板の製造方法。An end of a metal wire is inserted into a through hole of a substrate having a through hole penetrating from one surface side of the substrate to the other surface side and a wiring terminal formed on one surface of the substrate. A step of inserting from one surface side of the substrate and projecting to the other surface side of the substrate to form a ball at the tip of the metal wire; and a predetermined portion of the metal wire on one surface side of the substrate And a step of cutting and removing excess metal wires in this order. 【請求項２】少なくとも一方の面に配線端子を有する基
板の一方の面から他方の面に貫通する貫通孔を形成する
工程と、 キャピラリの先端に挿通された金属線の先端を、基板の
一方の面側から貫通孔に挿入して前記他方の面側に突出
させる工程と、 前記金属線の先端部にボールを形成する工程と、 前記キャピラリを上昇させる工程と、 前記キャピラリを基板の一方の面に配置される配線端子
上に移動する工程と、 前記キャピラリを下降させ、該配線端子に金属線を押圧
接合する工程と、 前記金属線の余剰金属線を切り離す工程と、をこの順序
で有することを特徴とする基板の製造方法。2. A step of forming a through-hole penetrating from one surface of a substrate having wiring terminals on at least one surface to the other surface, and connecting a tip of a metal wire inserted into a tip of the capillary to one of the substrates. Inserting the ball into the through hole from the surface side of the metal wire and projecting it to the other surface side; forming a ball at the tip of the metal wire; raising the capillary; and connecting the capillary to one of the substrates. A step of moving over a wiring terminal arranged on a surface, a step of lowering the capillary and pressing and joining a metal wire to the wiring terminal, and a step of cutting off excess metal wire of the metal wire in this order. A method for manufacturing a substrate, comprising: 【請求項３】少なくとも一方の面に複数の配線端子を有
し、かつ基板の一方の面から他方の面に貫通する複数の
貫通孔が形成された基板において、金属線の一端を前記
基板の一方の面側より該貫通穴に挿入して前記基板の他
方の面側に突出させ、その金属線の先端部にボールを形
成する工程と、 該金属線のうち前記基板の一方の面側の所定部分を基板
の一方の面に形成された配線端子に電気的に接続する工
程と、 余剰金属線を切断除去する工程と、をこの順序で複数回
繰り返すことを特徴とする基板の製造方法。3. A substrate having a plurality of wiring terminals on at least one surface and a plurality of through-holes penetrating from one surface of the substrate to the other surface. Inserting the ball into the through hole from one surface side and projecting to the other surface side of the substrate to form a ball at the tip of the metal wire; A method of manufacturing a substrate, comprising: repeating a step of electrically connecting a predetermined portion to a wiring terminal formed on one surface of a substrate and a step of cutting and removing excess metal wires a plurality of times in this order. 【請求項４】少なくとも一方の面に複数の配線端子を有
し、かつ基板の一方の面から他方の面に貫通する複数の
貫通孔が形成された基板において、キャピラリの先端に
挿通された金属線の先端を、基板の一方の面側から貫通
孔に挿入して前記他方の面側に突出させる工程と、 前記金属線の先端部にボールを形成する工程と、 前記キャピラリを上昇させる工程と、 前記キャピラリを基板の一方の面に配置される配線端子
上に移動する工程と、 前記キャピラリを下降させ、該配線端子に金属線を押圧
接合する工程と、 前記金属線の余剰金属線を切り離す工程と、をこの順序
で複数回繰り返すことを特徴とする基板の製造方法。4. In a substrate having a plurality of wiring terminals on at least one surface and a plurality of through holes penetrating from one surface of the substrate to the other surface, a metal inserted into a tip of a capillary. Inserting the tip of the wire into the through hole from one surface side of the substrate and projecting to the other surface side; forming a ball at the tip of the metal wire; and raising the capillary. Moving the capillary onto a wiring terminal disposed on one surface of a substrate; lowering the capillary to press and join a metal wire to the wiring terminal; and cutting off an excess metal wire of the metal wire. And a step of repeating the steps a plurality of times in this order. 【請求項５】該金属線の先端部を溶融して前記ボールを
形成することを特徴とする請求項１乃至請求項４のいず
れかに記載の基板の製造方法。5. The method for manufacturing a substrate according to claim 1, wherein the ball is formed by melting a tip portion of the metal wire. 【請求項６】請求項１乃至請求項５のいずれかに記載の
基板の製造方法を実施することにより製造されることを
特徴とする基板。6. A substrate manufactured by performing the method of manufacturing a substrate according to claim 1. 【請求項７】基板載置位置の一方の面側にキャピラリが
配置され、さらに基板載置位置の他方の面側にトーチが
配置されてなることを特徴とする突起製造装置。7. A projection manufacturing apparatus, wherein a capillary is arranged on one surface side of a substrate mounting position, and a torch is arranged on the other surface side of the substrate mounting position.
JP07814698A 1998-03-25 1998-03-25 Substrate, substrate manufacturing method and projection manufacturing apparatus Expired - Fee Related JP3728918B2 (en)

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