JPS60157251A - Infrared-ray detection element - Google Patents
Infrared-ray detection elementInfo
- Publication number
- JPS60157251A JPS60157251A JP59012284A JP1228484A JPS60157251A JP S60157251 A JPS60157251 A JP S60157251A JP 59012284 A JP59012284 A JP 59012284A JP 1228484 A JP1228484 A JP 1228484A JP S60157251 A JPS60157251 A JP S60157251A
- Authority
- JP
- Japan
- Prior art keywords
- infrared
- receiving surface
- light
- sensing element
- photo receiving
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001514 detection method Methods 0.000 title abstract description 10
- 239000000758 substrate Substances 0.000 claims description 17
- 150000001875 compounds Chemical class 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 12
- 239000013078 crystal Substances 0.000 claims description 2
- 230000035945 sensitivity Effects 0.000 abstract description 14
- 238000000034 method Methods 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052793 cadmium Inorganic materials 0.000 description 3
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 3
- 229910052753 mercury Inorganic materials 0.000 description 3
- 229910052714 tellurium Inorganic materials 0.000 description 3
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000003331 infrared imaging Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
- H01L27/14669—Infrared imagers
Abstract
Description
【発明の詳細な説明】
（ａｌ 発明の技術分野
本発明は光導電型の一次元アレイ赤外線検知素子の改良
に係り、受光面を所定の寸法だけ位置ずれさせることで
、受光面内の感度ムラをなくし、この赤外線検知素子を
用いて画像を撮像した場合、画像歪みを生じないように
した多素子型赤外線検知素子に関する。Detailed Description of the Invention (al) Technical Field of the Invention The present invention relates to improvement of a photoconductive type one-dimensional array infrared sensing element, and the present invention relates to an improvement of a photoconductive type one-dimensional array infrared sensing element, in which sensitivity unevenness within the light-receiving surface is reduced by shifting the position of the light-receiving surface by a predetermined dimension. The present invention relates to a multi-element infrared sensing element that eliminates the problem of image distortion when an image is captured using the infrared sensing element.
ｆｂｌ 技術の背景
サファイア基板のような絶縁性基板上に水銀・カドミウ
ム・テルルのような化合物半導体基板を樹脂等を用いて
固着し、この化合物半導体基板を櫛状にパターンニング
して、この櫛の歯の根元の受光面形成領域のみを除いて
、インジウム等の金属膜を蒸着等により形成して、受光
面を除いた櫛の歯の部分と、櫛の歯が集結している部分
にそれぞれ個別電極と共通電極とを形成した構造の多素
子型赤外線検知素子は周知である。Background of fbl technology A compound semiconductor substrate made of mercury, cadmium, tellurium, etc. is fixed onto an insulating substrate such as a sapphire substrate using resin, etc., and this compound semiconductor substrate is patterned into a comb shape. A metal film such as indium is formed by vapor deposition, excluding only the light-receiving surface formation area at the root of the tooth, and then the parts of the comb teeth excluding the light-receiving surface and the part where the comb teeth are concentrated are individually coated. A multi-element infrared sensing element having a structure in which an electrode and a common electrode are formed is well known.
（Ｃ） 従来技術と問題点
従来のこのような多素子型赤外線検知素子の平面図を第
１図に示し、この平面図をＩ−ＩＩ線に沿って切断した
断面図を第２図に示す。(C) Prior Art and Problems A plan view of such a conventional multi-element infrared sensing element is shown in FIG. 1, and a cross-sectional view of this plan view taken along line I-II is shown in FIG. .
第１図、および第２図に示すように従来の多素子型赤外
線検知素子は、サファイアのような絶縁性基板１の上に
裏面に絶縁膜２を形成した水銀・カドミウム・テルルよ
りなる化合物半導体基板３が接着剤４に依って固着され
ている。この化合物半導体基板３の一方は櫛の歯状に所
定のパターンにパターンニングされ、またこの化合物半
導体基板の片方はパターンニングされない状態に成って
おり、この櫛の歯状にパターンニングされた櫛の歯の根
元の受光面５の形成領域を除いてインジウムよりなる金
属膜が蒸着に依って形成され、この櫛の歯状の化合物半
導体基板の上に形成されている電極を個別電極６と称し
、この化合物半導体基板の櫛の歯状でない側の上に形成
されている電極を共通電極７と称している。ところで従
来の多素子型赤外線検知素子は、一枚の化合物半導体基
板より多素子型赤外線検知素子を高密度に集積度を向上
させて形成するために、また個別電極、および共通電極
より外部へ配線を取り出すためのポンディング作業を容
易にするために受光面５、および個別電極６が５（ｌｌ
ｉＩずつ組となって形成されており、この組となってい
る多素子型赤外線検知素子の個別電極６が互い違いに向
きを変えて一列にアレイ状に配設された構造となってい
る。As shown in FIGS. 1 and 2, a conventional multi-element type infrared sensing element is a compound semiconductor made of mercury, cadmium, and tellurium, which has an insulating film 2 formed on the back surface of an insulating substrate 1 such as sapphire. A substrate 3 is fixed with an adhesive 4. One side of this compound semiconductor substrate 3 is patterned into a predetermined pattern in the shape of comb teeth, and the other side of this compound semiconductor substrate 3 is not patterned. A metal film made of indium is formed by vapor deposition except for the formation area of the light-receiving surface 5 at the root of the tooth, and the electrode formed on this comb-tooth-shaped compound semiconductor substrate is referred to as an individual electrode 6. The electrode formed on the non-comb-like side of the compound semiconductor substrate is called a common electrode 7. By the way, in conventional multi-element infrared sensing elements, in order to improve the degree of integration of multi-element infrared sensing elements at a high density on a single compound semiconductor substrate, wiring from the individual electrodes and the common electrode to the outside is required. In order to facilitate the bonding work for taking out the light receiving surface 5 and the individual electrodes 6,
The individual electrodes 6 of the multi-element type infrared detecting elements in each set are arranged in a row in an array with alternating directions.
然し、このように櫛の歯状の個別電極６が互い違いに形
成されているので、この個別電極が所定数形成されてい
る段階で、この個別電極６と共通電極５との方向が異な
り、通常個別電極６側を→−一例電極共通電極７側を一
例電極（アース電極）として直流のバイアス電圧を印加
してこの多素子型赤外線検知素子を動作させている関係
上、この個別電極６と共通電極７の向きが逆になった時
に、この赤外線検知素子を流れる電流の方向が逆方向と
なり、そのためこの多素子型赤外線検知素子を用い像を
撮像した時、この電流の向きが逆に成った個所で撮像し
た像が歪むといった問題点を生していた。However, since the comb-shaped individual electrodes 6 are formed alternately in this way, when a predetermined number of these individual electrodes are formed, the directions of the individual electrodes 6 and the common electrode 5 are different, and normally Since the individual electrode 6 side is used as an example electrode (earth electrode) and the common electrode 7 side is used as an example electrode (earth electrode) to apply a DC bias voltage to operate this multi-element type infrared sensing element, it is common to this individual electrode 6. When the direction of the electrode 7 is reversed, the direction of the current flowing through this infrared sensing element is reversed, so when an image is captured using this multi-element type infrared sensing element, the direction of this current is reversed. This poses a problem in that the image taken at a particular location is distorted.
このことについて調査した処、第３図に示すように個別
電極６が下の方向を向いている時には、受光面５の中心
線１１に対応して、この赤外線検知素子の感度曲線は１
２のようになり感度のピーク値１３が受光面５の中心線
に一致せず、中心線１１の下側に赤外線検知素子の感度
のピーク値１３が存在する。またこの個別電極６が第４
図に示すように反対方向に成った時には、この赤外線検
知素子の感度のピーク値１４ば受光面５の中心線１１よ
り上部の方向にずれたところで生じている。このことは
、個別電極の方向が異なるために受光面を流れる電流の
方向が異なるために生じるためと考えられ、ごｎうな個
別電極が互い違いに方向を異ならせて組み合わせた、こ
の多素子型赤外線検知素子を赤外線描像装置に用い、例
えば第５図に示すような真っ直くな線２１を撮像した時
、その撮像された画像は２２に示すように個別電極の方
向が異なる点で階段状に位置ずれをおこし、撮像された
画像が歪んだ状態になる。After researching this matter, we found that when the individual electrodes 6 face downward as shown in FIG. 3, the sensitivity curve of this infrared sensing element is 1
2, the peak sensitivity value 13 does not coincide with the center line of the light-receiving surface 5, and the peak sensitivity value 13 of the infrared detection element exists below the center line 11. Also, this individual electrode 6 is the fourth
As shown in the figure, when the direction is opposite, the peak value 14 of the sensitivity of this infrared detecting element occurs at a position shifted upward from the center line 11 of the light receiving surface 5. This is thought to occur because the direction of the current flowing through the light-receiving surface is different due to the different directions of the individual electrodes. When the sensing element is used in an infrared imaging device to image a straight line 21 as shown in FIG. This causes positional shift and the captured image becomes distorted.
（ｄｌ 発明の目的
本発明は上記した問題点を除去し、受光面の中心線に対
応して、赤外線検知素子の感度が最高の値を示していな
い赤外線検知素子の前記受光面を各個別電極がまとまっ
た段階毎に中心線より位置ずれさせ、前記赤外線検知素
子の個別電極がまとまった段階毎に受光面での感度のピ
ークが受光面の中心位置に合致させて、この赤外線検知
素子を撮像装置に用いて像を撮像した時、その撮像され
た画像が位置ずれを起こして歪まないようにした新規な
多素子型赤外線検知素子の捉供を目的とするものである
。(dl Object of the Invention The present invention eliminates the above-mentioned problems, and the light-receiving surface of an infrared sensing element whose sensitivity does not show the highest value is connected to each individual electrode corresponding to the center line of the light-receiving surface. The infrared sensing element is imaged by shifting the position from the center line at each stage where the individual electrodes of the infrared sensing element are clustered, and by aligning the peak of sensitivity on the light receiving surface with the center position of the light receiving surface at each stage where the individual electrodes of the infrared sensing element are clustered. The purpose of this invention is to provide a novel multi-element type infrared sensing element that prevents the captured image from being distorted due to positional deviation when the image is captured using the device.
（ｅ） 発明の構成
かかる目的を達成するだめの本発明の赤外線検知素子は
、絶縁性基板上に固着された化合物半導体結晶が、所定
のピッチで分δ１■された個別部分と、前記分離された
個別部分が集結している共通部分にパターンニングされ
、該個別部分の所定の領域が受光面となるように、前記
個別部分と、共通部分にそれぞれ個別電極、および共通
電極が形成され、前記個別電極が所定数組となって形成
され、前記個別電極と該個別電極が集結する共通電極の
それぞれが互い違いに一列に配設されている赤外線検知
素子に於いて、前記互い違いに組となっている個別電極
を有する赤外線検知素子ごとに該赤外線検知素子の受光
面が、該受光面の中心線に沿った位置より、所定の寸法
だけ互い違いに位置ずれされて形成されていることを特
徴とするものである。(e) Structure of the Invention In order to achieve the above object, the infrared sensing element of the present invention comprises a compound semiconductor crystal fixed on an insulating substrate, separate portions separated by δ1× at a predetermined pitch, and the separated portions. The individual parts are patterned into a common part where the individual parts are gathered, and individual electrodes and common electrodes are formed in the individual part and the common part, respectively, so that a predetermined area of the individual part becomes a light receiving surface, In an infrared sensing element in which a predetermined number of sets of individual electrodes are formed, and each of the individual electrodes and a common electrode where the individual electrodes are assembled are arranged in a row alternately, The light-receiving surfaces of the infrared-sensing elements for each infrared-sensing element having individual electrodes are formed so as to be staggered by a predetermined dimension from the position along the center line of the light-receiving surface. It is something.
（ｆ） 発明の実に例
以下図面を用いて本発明の一実施例につき詳細に説明す
る。(f) Example of the Invention An embodiment of the invention will be described in detail below with reference to the drawings.
第６図は本発明の赤外線検知素子の平面図で、第７図は
本発明の赤外線検知素子の感度特性を示す図である。FIG. 6 is a plan view of the infrared detecting element of the present invention, and FIG. 7 is a diagram showing the sensitivity characteristics of the infrared detecting element of the present invention.
第６図に示すように本発明の赤外線検知素子は設剖上の
受光面の中心線３１に対して、この赤外線検知素子を構
成する個別電極３２の方向が異なる毎に製造上の受光面
の中心線が、設計上の受光面の中心線３１に対して、互
い違いに位置ずれして形成されている点にある。As shown in FIG. 6, the infrared sensing element of the present invention has different orientations of the individual electrodes 32 constituting the infrared sensing element with respect to the anatomical center line 31 of the light receiving surface. The point is that the center lines are formed in a staggered manner with respect to the designed center line 31 of the light-receiving surface.
例えば、個別電極３２Ａ 、 ３２Ｂ 、３３Ｇ・・・
−・と受光面３３Δ、３３Ｂ’、３３Ｃ・・・・・と共
通電極３４とを有する赤外線検知素子３５と、個別電極
３６Ａ 、３６Ｂ、３６Ｃ・・・・・と共通電極３７と
、受光面３８Ａ 、３８Ｂ、３８Ｃ・・・・・とを有す
る赤外線検知素子３９と、個別電極４０Ａ 、４０Ｂ、
４０Ｃ，・・・・・と受光面４１Ａ 、４１Ｂ、４１
Ｇ・・・・・と、共通電極４２を有する赤外線検知素子
４３とが、個別電極の方向をそれぞれ互い違いにして形
成されている。そしてこれ等赤外線検知素子の受光面３
３Δ、 ３３Ｂ、 ３３Ｃ・・・・・は、受光面の面積
が５０μｍＸ５０μｍの寸法であると設計上の受光面の
中心線３１より矢印へ方向に１０μｍ位置ずれさせ、赤
外線検知素子３９の受光面３８八、３８Ｂ、 ３８Ｇ・
・・・・ば、受光面の面積が５０μｍＸ５０μｍの寸法
であると、設計上の受光面の中心線３１より矢印Ｂ方向
に１０μｍ位置ずれさせ、赤外線検知素子４３の受光面
４１Ａ 、４１Ｂ、４１Ｃ・・・・・は、受光面の直留
が５０μｍＸ５０μｍの寸法であると設計上の受光面の
中心線３１より矢印Ｃ方向に１０μｍ、それぞれ設δ１
上の中心線に対して互い違いに受光面を位置ずれさせる
ようにする。このようにすれば、第７図に示すように設
計上の受光面の中心線に対して、これら個別電極が互い
違いに配設されている赤外線検知素子３５，３９．４３
・・・・・が−次元にアレイ上に配設された赤外線検知
素子の感度が設計上の受光面の中心線５１の位置でピー
ク値を示すようになり、このような赤外線検知素子を撮
像装置に用いて、像を撮像すると撮像された画像に歪み
を発生しなくなる。このような赤外線検知素子を形成す
るには、第２図に示すようにザフィア基板１上に、裏面
に絶縁膜２を形成した水銀・カドミウム・テルルよりな
る化合物半導体基板３をエポキシ樹脂等の接着剤４で固
着した後、その上にホトレジスト膜を塗布し、ついでこ
のホトレジスト膜をホトリソグラフィ法で受光面形成領
域のみホトレジスト膜を残すようにして、所定のパター
ンに形成する。更にこのパターンユング後のホトレジス
ト膜上にインジウムの金属膜を蒸着により形成し、次い
でホトレジスト膜を除去するととともにその上の金属膜
を除去する。この工程に於いて、ホトレジスト膜を所定
のパターンに形成する際に前記受光面形成領域上で除去
しないで残すホトレジスト膜を所定の寸法になるように
形成すると良い。For example, individual electrodes 32A, 32B, 33G...
-, an infrared sensing element 35 having light receiving surfaces 33Δ, 33B', 33C... and a common electrode 34, individual electrodes 36A, 36B, 36C..., a common electrode 37, and a light receiving surface 38A. , 38B, 38C... and individual electrodes 40A, 40B,
40C,... and light receiving surfaces 41A, 41B, 41
G... and an infrared detecting element 43 having a common electrode 42 are formed with the directions of the individual electrodes staggered. And these light-receiving surfaces 3 of the infrared sensing elements
3Δ, 33B, 33C... are shifted by 10 μm in the direction of the arrow from the designed center line 31 of the light-receiving surface when the area of the light-receiving surface is 50 μm x 50 μm, and the light-receiving surface 38 of the infrared detection element 39 is 8, 38B, 38G・
For example, if the area of the light-receiving surface is 50 μm x 50 μm, the light-receiving surface 41A, 41B, 41C of the infrared detection element 43 is shifted by 10 μm in the direction of arrow B from the designed center line 31 of the light-receiving surface. ... is 10 μm in the direction of arrow C from the designed center line 31 of the light receiving surface when the dimensions of the straight line of the light receiving surface are 50 μm x 50 μm, and the design δ1 is 10 μm, respectively.
The light receiving surfaces are alternately shifted with respect to the upper center line. In this way, as shown in FIG. 7, the infrared sensing elements 35, 39, 43 in which these individual electrodes are arranged alternately with respect to the designed center line of the light receiving surface.
The sensitivity of the infrared sensing elements arranged on the array in the negative dimension shows a peak value at the designed center line 51 of the light receiving surface, and such infrared sensing elements can be imaged. When the device is used to capture an image, no distortion occurs in the captured image. To form such an infrared sensing element, as shown in FIG. 2, a compound semiconductor substrate 3 made of mercury, cadmium, and tellurium with an insulating film 2 formed on the back surface is bonded with epoxy resin or the like on a Zaphia substrate 1. After fixing with Agent 4, a photoresist film is applied thereon, and then this photoresist film is formed into a predetermined pattern by photolithography, leaving the photoresist film only in the area where the light-receiving surface is to be formed. Further, a metal film of indium is formed by vapor deposition on the photoresist film after patterning, and then the photoresist film and the metal film thereon are removed. In this step, when the photoresist film is formed into a predetermined pattern, it is preferable to form a photoresist film that is not removed but remains on the light-receiving surface formation region so as to have a predetermined size.
［） 発明の効果
以上述べたように要するに本発明は、バイアス電圧の印
加極性が逆向きとなる関係で複数の赤外線検知素子を一
列に配列する場合、それ等逆向きとなる素子の受光面中
心線を相互にずらすことを骨子とするものであり、各赤
外線検知素子の受光面の感度が最も高くなる位置が、赤
外線検知素子の設計上の受光面の中心位置に合致するよ
うになるので、こ′ような赤外線検知素子を撮像装置に
用いれば、撮像された画像に歪みを発生することなく均
質な赤外画像が得られる効果を生しる。[) Effects of the Invention As stated above, in short, the present invention provides a method for arranging a plurality of infrared sensing elements in a row in such a manner that the applied polarity of the bias voltage is opposite to the center of the light receiving surface of the elements facing the opposite direction. The main idea is to shift the lines from each other, so that the position where the sensitivity of the light-receiving surface of each infrared sensing element is highest matches the designed center position of the light-receiving surface of the infrared sensing element. When such an infrared detection element is used in an imaging device, it is possible to obtain a homogeneous infrared image without causing distortion in the captured image.
第１図は従来の赤外線検知素子の平面図、第２図は第１
図をＩ−ＩＩ線に沿って切断した断面図、第３図および
第４図は従来の赤外線検知素子に於いて、受光面の位置
と赤外線検知素子の感度との関係を示す模式図、第５図
は従来の赤外線検知素子を用いて撮像した状態を示す模
式図、第６図は本発明の赤外線検知素子の平面図、第７
図は本発明の赤外線検知素子の受光面に於ける感度を示
す曲線である。
■は号ファイア基板、２は絶縁膜、３は化合物半導体基
板、４は接着剤、５．３３Ａ、３３Ｂ、３３Ｇ、３８八
、３８Ｂ 、３８Ｃ，４１Δ、４１８．４１Ｃは受光面
、６１３２八、 ３２Ｂ、 ３３Ｇ、 ３６八、３６Ｂ
、３６０．４ＯＡ、４０Ｂ、４０Ｇは個別電極、７．３
４，３７，４２ば共通電極、ＬＬ３１．５１は中心線、
１２は感度曲線、１３、１４はピーク値、２１は直線、
２２は撮像された画像、３５，３９．４３は赤外線検知
素子を示す。
第１図
第３図 節４図
第５図
７−
−−−−−−−ヱー
第６図
ト
第 ７図Figure 1 is a plan view of a conventional infrared sensing element, and Figure 2 is a top view of a conventional infrared sensing element.
3 and 4 are schematic diagrams showing the relationship between the position of the light-receiving surface and the sensitivity of the infrared sensing element in a conventional infrared sensing element. FIG. 5 is a schematic diagram showing an image taken using a conventional infrared sensing element, FIG. 6 is a plan view of the infrared sensing element of the present invention, and FIG.
The figure is a curve showing the sensitivity at the light receiving surface of the infrared detecting element of the present invention. ■ is fire substrate, 2 is insulating film, 3 is compound semiconductor substrate, 4 is adhesive, 5.33A, 33B, 33G, 388, 38B, 38C, 41Δ, 418.41C is light receiving surface, 61328, 32B , 33G, 368, 36B
, 360.4OA, 40B, 40G are individual electrodes, 7.3
4, 37, 42 are common electrodes, LL31.51 is the center line,
12 is a sensitivity curve, 13 and 14 are peak values, 21 is a straight line,
Reference numeral 22 indicates a captured image, and reference numerals 35, 39, and 43 indicate infrared detection elements. Fig. 1 Fig. 3 Section 4 Fig. 5 Fig. 7 - Figure 6 Fig. 7
Claims (1)
ピッチで分離された個別部分と、前記分離された個別部
分が集結している共通部分にパターンニングされ、該個
別部分の所定の領域が受光面となるように、前記個別部
分と、共通部分にそれぞれ個別電極、および共通電極が
形成され、前記個別電極が所定数組となって形成され、
前記個別電極と該個別電極が集結する共通電極のそれぞ
れが互い違いに一列に配設されている赤外線検知素子に
於いて、前記互い違いに組となっている個別電極を有す
る赤外線検知素子ごとに該赤外線検知素子の受光面が、
該受光面の中心線に沿った位置より、所定の寸法だけ互
い違いに位置ずれされて形成されていることを特徴とす
る赤外線検知素子。A compound semiconductor crystal fixed on an insulating substrate is patterned into individual parts separated at a predetermined pitch and a common part where the separated individual parts are gathered, and a predetermined area of the individual parts is patterned. Individual electrodes and a common electrode are formed in the individual portion and the common portion, respectively, so as to form a light-receiving surface, and the individual electrodes are formed in a predetermined number of sets,
In an infrared sensing element in which the individual electrodes and a common electrode where the individual electrodes are assembled are arranged alternately in a row, each infrared sensing element having the individual electrodes arranged in alternating pairs receives the infrared rays. The light-receiving surface of the sensing element is
An infrared detecting element characterized in that the infrared detecting element is formed so as to be staggered by a predetermined dimension from a position along the center line of the light receiving surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59012284A JPS60157251A (en) | 1984-01-25 | 1984-01-25 | Infrared-ray detection element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59012284A JPS60157251A (en) | 1984-01-25 | 1984-01-25 | Infrared-ray detection element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60157251A true JPS60157251A (en) | 1985-08-17 |
Family
ID=11801056
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59012284A Pending JPS60157251A (en) | 1984-01-25 | 1984-01-25 | Infrared-ray detection element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60157251A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04137258U (en) * | 1991-06-11 | 1992-12-21 | 三菱自動車工業株式会社 | Air cleaner mounting structure |
-
1984
- 1984-01-25 JP JP59012284A patent/JPS60157251A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04137258U (en) * | 1991-06-11 | 1992-12-21 | 三菱自動車工業株式会社 | Air cleaner mounting structure |
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