JPS60245166A - Solid state image pick-up device - Google Patents
Solid state image pick-up deviceInfo
- Publication number
- JPS60245166A JPS60245166A JP59100983A JP10098384A JPS60245166A JP S60245166 A JPS60245166 A JP S60245166A JP 59100983 A JP59100983 A JP 59100983A JP 10098384 A JP10098384 A JP 10098384A JP S60245166 A JPS60245166 A JP S60245166A
- Authority
- JP
- Japan
- Prior art keywords
- light
- photoconductor film
- solid
- state imaging
- imaging device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007787 solid Substances 0.000 title abstract 2
- 238000006243 chemical reaction Methods 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 15
- 239000007772 electrode material Substances 0.000 claims abstract description 7
- 239000004065 semiconductor Substances 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 5
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 5
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 5
- 238000003384 imaging method Methods 0.000 claims description 29
- 230000035945 sensitivity Effects 0.000 claims description 8
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 239000002245 particle Substances 0.000 claims description 3
- 230000000903 blocking effect Effects 0.000 claims description 2
- 238000000605 extraction Methods 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims 1
- 230000003287 optical effect Effects 0.000 abstract description 17
- 238000000034 method Methods 0.000 abstract description 8
- 108091008695 photoreceptors Proteins 0.000 abstract 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は固体撮像装置特に光導電体膜を走査回路上に積
層した構造の積層型固体撮像装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a solid-state imaging device, and particularly to a stacked solid-state imaging device having a structure in which a photoconductor film is stacked on a scanning circuit.
従来例の構成とその問題点
従来型の固体撮像装置すなわち光電変換部としてＰｎダ
イオードやＭＯＳキャパシタを用いた積層型でないタイ
プの固体撮像装置において、光電変換素子列のアレイ中
の定められた個数の光電変換素子列に入射する光を該固
体撮像装置のアルミニウムなどの配線材料の一部を用い
て遮光することによって、一定の直流レベル信号を取り
出して基準信号として用いることは知られている。この
遮光部の事を光学的黒領域（オプティカル・ブラック）
と呼ぶことも公知の事実である。Structure of conventional example and its problems In a conventional solid-state imaging device, that is, a non-stack type solid-state imaging device that uses a Pn diode or MOS capacitor as a photoelectric conversion section, a fixed number of photoelectric conversion elements in an array are used. It is known that a certain DC level signal is extracted and used as a reference signal by blocking light incident on a photoelectric conversion element array using a part of the wiring material such as aluminum of the solid-state imaging device. This light-shielding area is called an optical black area.
It is also a well-known fact that it is called.
ところで、光導電体膜を走査回路上に積層した構造の積
層型固体撮像装置においては、上記のオプティカル・ブ
ラックを固体撮像装置の配線材料つまりアルミニウム電
極の一部を用いて遮光するという方法をとれば、アルミ
ニウム電極の表面段差により上記光導電体膜のリーク電
流を増大するため固体撮像装置の暗電流が増大するとい
う問題点を有しているという理由で、オプティカル・ブ
ラックは積層型固体撮像装置に接着するための接着カラ
ー・フィルタ上に形成されていた。By the way, in a stacked solid-state imaging device having a structure in which a photoconductor film is stacked on a scanning circuit, it is possible to use a method of shielding the above optical black using a part of the wiring material of the solid-state imaging device, that is, an aluminum electrode. For example, optical black has the problem that the dark current of solid-state imaging devices increases due to the increase in leakage current of the photoconductor film due to the surface level difference of the aluminum electrode. Adhesive color filter was formed on it for adhesion.
しかるに、近年固体撮像装置の小型化・高精度化にとも
ないカラーフィルタの撮像装置への合わせズレが少ない
という理由から、カラーフィルタをオンチップ上に形成
するオンチップフィルタの６ベー７゛
技術導入が盛んであり、上記のオプティカル・ブラック
を積層型の固体撮像装置自身に、しかも光導電体膜のリ
ーク電流を増大することなく形成する技術への要求は非
常に大きなものとなっている。However, in recent years, as solid-state imaging devices have become smaller and more precise, the 6-by-7 technology of on-chip filters, in which color filters are formed on-chip, has been introduced because there is less misalignment of color filters with the imaging device. There is a great demand for a technique for forming the above-mentioned optical black on the layered solid-state imaging device itself without increasing the leakage current of the photoconductor film.
発明の目的
本発明は上記のような事情を考慮してなされたものであ
り、光導電体膜を走査回路上に積層した構造の積層型固
体撮像装置においても、信号処理上で必要な基準直流信
号を取り出すだめのいわゆるオプティカル・ブラック部
を特殊のプロセスを用いることなく具備した固体撮像装
置を提供することを目的とする。Purpose of the Invention The present invention has been made in consideration of the above-mentioned circumstances, and even in a stacked solid-state imaging device having a structure in which a photoconductor film is stacked on a scanning circuit, the reference direct current required for signal processing is It is an object of the present invention to provide a solid-state imaging device that is equipped with a so-called optical black section for extracting signals without using any special process.
発明の構成
本発明は、２次元配列された光導電体膜と光電変換セル
とを有する受光部のうちのあらかじめ定められた少なく
とも一列の受光部を光に対して感度を持たないという構
造によりいわゆるオプティカル・ブラック部を形成し、
しかも固体撮像装置の出力取り出し用のアルミニウム配
線とは別の材料で形成することにより光導電体膜のリー
ク電流６ベー。Structure of the Invention The present invention has a structure in which at least one predetermined row of light receiving parts of a light receiving part having a two-dimensionally arranged photoconductor film and photoelectric conversion cells is not sensitive to light. forming an optical black section,
Moreover, by forming the photoconductor film using a different material from the aluminum wiring for output extraction of the solid-state imaging device, the leakage current of the photoconductor film is reduced to 6 bases.
を増大することもなく、さらに特殊のプロセスを用いる
ことなく前記装置を簡単に製造可能とするものである。The device can be easily manufactured without increasing the amount of energy and without using special processes.
実施例の説明
以下図面により本発明の詳細な説明する。第１図は本発
明に係る固体撮像装置の一実施例の構成を断面図で示し
たものである。DESCRIPTION OF EMBODIMENTS The present invention will now be described in detail with reference to the drawings. FIG. 1 is a sectional view showing the configuration of an embodiment of a solid-state imaging device according to the present invention.
同図において、１は半導体基板、２はアモルファス・シ
リコンなどに代表される光導電体膜、３は透明電極、４
は二酸化シリコンなどの絶縁膜を示し、６は本固体撮像
装置の出力堆り出し用のアルミニウム配線の一部を示す
。ここで、アルミニウム材料の表面はグレインのサイズ
も大きく、さらにアルミニウムのシンタリングによって
上記グレインサイズの差が拡がるだめ図の様にアルミニ
ウム材料の表面段差は大きくなる。さらに配線に用いる
アルミニウム材料は配線抵抗が大きくならない様に１μ
ｍ程度の厚さを用いるだめ、アルミニウム材料が有る部
分と存在しない部分の段差も１μｍ程度と々る。したが
って従来例の様にアル了へ−
ミニラム配線と同一の材料でオプティカル・ブラック部
を形成した場合はその後に形成されるアモルファス・シ
リコンなどの光導電体膜２が段差に対して敏感にリーク
の増大という特性劣化の性質を持っていることと考え合
わせれば、不都合であることは容易に理解できることで
ある。In the figure, 1 is a semiconductor substrate, 2 is a photoconductor film typified by amorphous silicon, 3 is a transparent electrode, and 4 is a photoconductor film typically made of amorphous silicon.
6 indicates an insulating film such as silicon dioxide, and 6 indicates a part of aluminum wiring for outputting the output of the solid-state imaging device. Here, the size of the grains on the surface of the aluminum material is large, and the difference in grain size increases due to the sintering of the aluminum, so that the step difference on the surface of the aluminum material becomes large as shown in the figure. Furthermore, the aluminum material used for wiring is
If a thickness of about 1.0 m is used, the difference in level between the part with the aluminum material and the part without it is also about 1 μm. Therefore, if the optical black part is formed of the same material as the miniram wiring as in the conventional example, the photoconductor film 2 formed afterwards, such as amorphous silicon, will be sensitive to steps and will not leak. It is easy to understand that this is an inconvenience if you consider that it has the property of deteriorating characteristics due to increase.
しだがって、本実施例では光導電体膜２と光電変換セル
１３，１４．１５との間をつなぎ合わせるだめの光電変
換セル１３，１４．１５とオーム性接触を実現するだめ
の１１００ｎ程度の厚みのモリブデン・チタン・タング
ステン・クロム等の電極材料６３．６４．６５の一部６
ｏを用いてオプティカル・ブラック部を実現した例を示
しである。なお、第１部において、１１〜１５は光電変
換セル、２１〜２５は信号の転送部、４１〜４６は信号
読み込み及び転送制御用の多結晶シリコン等から々る電
極、３１〜３６は信号読み込みゲート領域を示し、６３
〜５６は光電変換セル１３〜１５と電極材料６３〜６６
との間をつなぎ合わせる多結晶シリコン等からなる電極
を示しである。Therefore, in this embodiment, the distance between the photoconductor film 2 and the photoelectric conversion cells 13, 14.15 is approximately 1100 nm to realize ohmic contact with the photoelectric conversion cells 13, 14.15. Part 6 of electrode material 63.64.65 of molybdenum, titanium, tungsten, chromium, etc. with a thickness of
This figure shows an example in which an optical black portion is realized using o. In the first part, 11 to 15 are photoelectric conversion cells, 21 to 25 are signal transfer units, 41 to 46 are electrodes made of polycrystalline silicon, etc. for signal reading and transfer control, and 31 to 36 are signal reading units. showing the gate region, 63
-56 are photoelectric conversion cells 13-15 and electrode materials 63-66
This figure shows an electrode made of polycrystalline silicon or the like that connects the two.
なお、ここでは光電変換セルとしてＰ −ｎダイオード
、信号転送部としてＣＯＤを念頭において実施例を示す
が、他の構造の光電変換セルと信号転送部の組み合わせ
に対しても本発明の有効性は同一に発揮される。Note that although an example will be described here with a P-n diode as the photoelectric conversion cell and a COD as the signal transfer section, the effectiveness of the present invention may also be demonstrated for combinations of photoelectric conversion cells and signal transfer sections with other structures. It is performed in the same way.
今、転送部２３，２４．２５には光に対応した信号が集
められて紙面に垂直な方向に転送されるが、転送部２１
．２２の二列は光に対して感度を持た々いのでこの二列
より取り出しだ出力信号の直流レベルは黒の基準信号と
して出力用回路手段に供給される訳である。Now, signals corresponding to light are collected in the transfer units 23, 24, and 25 and transferred in a direction perpendicular to the plane of the paper.
．． Since the two columns 22 have high sensitivity to light, the DC level of the output signal taken out from these two columns is supplied to the output circuit means as a black reference signal.
次に第２図に本発明に係る固体撮像装置の第１図とは別
の実施例の構成を断面図で示す。なお、第１図と共通の
番号は第１図と全く同じ構成であるので以下の説明では
省略するものとする。第２図において、７３．了４．了
５は光導電体膜２と光電変換セル１３，１４．１５との
間をつなぎ合わせるだめのモリブデン・チタン・タング
ステン・クロム等の電極材料６３，６４．６５のすき間
から装置上にもれ込む光を遮光するだめの数百圃９１＼
−７
程度のモリブデン・チタン・タングステン・クロム等の
シールド材料を示し７、前記シールド材料の一部７０を
用いてオプティカル・ブラック部が実現されている。Next, FIG. 2 shows a cross-sectional view of the structure of another embodiment of the solid-state imaging device according to the present invention, which is different from that shown in FIG. Note that the same numbers as those in FIG. 1 have the same structure as in FIG. 1, so they will be omitted in the following explanation. In FIG. 2, 73. Completed 4. The liquid 5 leaks onto the device through gaps between electrode materials 63, 64, 65, such as molybdenum, titanium, tungsten, chromium, etc., which are used to connect the photoconductor film 2 and the photoelectric conversion cells 13, 14, 15. Hundreds of fields that block light 91＼
The optical black part is realized by using a part 70 of the shielding material.
さらに第３図には本発明に係る固体撮像装置の別の実施
例の構成を断面図で示しである。第３図においては、光
導電体膜２上に設けられる透明電極３とアルミニウム配
線６との間にオーム性接触を有する配線材料８０の一部
を用いてオプティカル・ブラック部が実現されている。Further, FIG. 3 is a sectional view showing the structure of another embodiment of the solid-state imaging device according to the present invention. In FIG. 3, an optical black portion is realized using a portion of a wiring material 80 having ohmic contact between the transparent electrode 3 provided on the photoconductor film 2 and the aluminum wiring 6.
まだ第４図には本発明に係る固体撮像装置の別の実施例
の構成を断面図で示しである。同図において、光導電体
膜２上の透明電極３よりも上部に具備される光を遮蔽す
るだめのシールド材料９３゜９４の一部９０を用いてオ
プティカル・ブラック部が実現されている。FIG. 4 is a sectional view showing the structure of another embodiment of the solid-state imaging device according to the present invention. In the figure, an optical black portion is realized using a portion 90 of a shielding material 93° 94 provided above the transparent electrode 3 on the photoconductor film 2 and used to shield light.
第５図には本発明に係る固体撮像装置の別の実施例の構
成を断面図で示しである。第５図において、光導電体膜
２上にレジスト等のマスクパターン９８を形成した後、
Ｐ＋やＢ＋などの荷電粒子９９１０べ−７
を６０〜２００ ＫｅＶ程度の高電界で高速度に照射す
ると、該荷電粒子９９が照射され注入された光導電体膜
２は部分的に光に対する感度が消滅する。FIG. 5 is a sectional view showing the structure of another embodiment of the solid-state imaging device according to the present invention. In FIG. 5, after forming a mask pattern 98 such as a resist on the photoconductor film 2,
When charged particles 9910B, such as P+ and B+, are irradiated at high speed in a high electric field of about 60 to 200 KeV, the photoconductor film 2 in which the charged particles 99 are irradiated and injected becomes partially sensitive to light. Disappear.
したがって、前記の光に対する感度が消滅した部分をオ
プティカル・ブラック部として利用する訳である。Therefore, the portion where the sensitivity to light has disappeared is used as an optical black portion.
発明の詳細
な説明したように、この発明によれば、積層型の固体撮
像装置においても、光導電体膜のＩＪ −り電流を増大
することなしに、さらには第１図〜第４図の様にプロセ
スを何ら増大することなしに、また第６図の様な簡単な
プロセスの追加によってオプティカル・ブラック部を形
成することができ、信号処理手段に基準直流信号を供給
することが可能となる。As described in detail, according to the present invention, even in a stacked solid-state imaging device, the IJ current of the photoconductor film can be improved without increasing the IJ current as shown in FIGS. 1 to 4. As shown in FIG. 6, an optical black portion can be formed without increasing the process in any way and by adding a simple process as shown in FIG. 6, and it becomes possible to supply a reference DC signal to the signal processing means. .
第１図〜第６図はそれぞれ本発明に係る固体撮像装置の
実施例の断面図を示すものである。
１・・・・・半導体基板、２・・・・・光導電体膜、３
・・・透明電極、４・・・・・絶縁膜、６・・・・アル
ミニウム配１１八−１
線の一部、１１〜１５・・・光電変換セル、２１〜２６
・・・・・信号転送部、３１〜３５・・・・・信号読み
込みゲート領域、４１〜４６・・・・信号制御電極、５
１〜５６・・・・・・つなぎ合わせ電極、６０．６１〜
６６゜８０・・・−電極材料、７０，７３〜７５ 、９
０．９３゜９４・・・・・・シールド材料。FIGS. 1 to 6 each show a cross-sectional view of an embodiment of a solid-state imaging device according to the present invention. 1... Semiconductor substrate, 2... Photoconductor film, 3
...Transparent electrode, 4...Insulating film, 6...Part of aluminum interconnection 118-1 wire, 11-15...Photoelectric conversion cell, 21-26
...Signal transfer section, 31-35...Signal reading gate region, 41-46...Signal control electrode, 5
1-56...Connecting electrode, 60.61-
66°80...-electrode material, 70, 73-75, 9
0.93°94... Shield material.
Claims (1)
体膜の下部に形成され前記光導電体膜との間でオーム性
接触する光電変換セルとを有し、入射光量に対応する信
号電荷を蓄積する受光部と、前記半導体基板上の前記光
電変換セルに隣接して形成され駆動クロックの印加によ
り前記受光部の信号電荷を読み出し外部回路に転送出力
するゲート電極を有する転送部とからなる複数の絵素を
２次元配列し、前記２次元配列された複数の絵素のうち
のあらかじめ定められた少なくとも一列の受光部を光に
対して感度を持たない構造手段と、前記光に対して感度
を持たない受光部から取り出した出力信号の直流レベル
を該固体撮像装置における基準信号として用いる回路手
段とを具備し、出力取り出し用のアルミニウム配線とは
別の材料で上記の感度を持たない構造が形成されてなる
ことを２べ−７ 特徴とする固体撮像装置。 （２）半導体基板上に形成した光導電体膜とこの光導電
体膜の下部に形成され該光導電体膜との間をつなぎ合わ
せるために光電変換セルとの間にオーム性接触を実現す
るだめのモリブデン・チタン・タングステン・クロム等
の電極材料の一部を用いて、感度を持たない受光部を実
現することを特徴とする特許請求の範囲第１項に記載の
固体撮像装置。 （３）光導電体膜と光電変換セルとの間をつなぎ合わせ
るためのモリブデン・チタン・タングステン・クロム等
の電極材料のすき間から装置上にもれ込む光を遮光する
だめのシールド材料の一部を用いて、感度を持たない受
光部を実現することを特徴とする特許請求の範囲第１項
に記載の固体撮像装置。 （４）光導電体膜上に設けられる透明電極とオーム性接
触を有する配線材料の一部を用いて、感度を持たない受
光部を実現することを特徴とする特許請求の範囲第１項
に記載の固体撮像装置。 ３ベー／ （６）光導電体膜上に設けられる透明電極よりも上部に
具備される光を遮蔽するだめのシールド材料の１部を用
いて、感度を持たない受光部を実現することを特徴とす
る特許請求の範囲第１項に記載の固体撮像装置。 （６）光導電体膜のうちのあらかじめ定められた少なく
とも一列以上の受光部に対応する部分に対して高速度の
粒子を照射することにより感度を持たない受光部を実現
することを特徴とする特許請求の範囲第１項に記載の固
体撮像装置。[Scope of Claims] (1) Comprising a photoconductor film formed on a semiconductor substrate and a photoelectric conversion cell formed under the photoconductor film and in ohmic contact with the photoconductor film. , a light receiving part that accumulates signal charges corresponding to the amount of incident light; and a gate formed adjacent to the photoelectric conversion cell on the semiconductor substrate and reading out the signal charges of the light receiving part by applying a drive clock and transferring and outputting them to an external circuit. A structure in which a plurality of picture elements consisting of a transfer part having an electrode are arranged two-dimensionally, and at least one predetermined row of light-receiving parts of the plurality of picture elements in the two-dimensional arrangement are not sensitive to light. and a circuit means for using the DC level of the output signal taken out from the light receiving section that is not sensitive to light as a reference signal in the solid-state imaging device, and is made of a material different from the aluminum wiring for output extraction. 2. A solid-state imaging device characterized in that a structure having no sensitivity as described above is formed. (2) Realizing ohmic contact between the photoconductor film formed on the semiconductor substrate and the photoelectric conversion cell formed below the photoconductor film to connect the photoconductor film. 2. The solid-state imaging device according to claim 1, wherein a light-receiving section having no sensitivity is realized by using a portion of an electrode material such as molybdenum, titanium, tungsten, or chromium. (3) Part of the shielding material used to block light from leaking onto the device through the gaps between the electrode materials such as molybdenum, titanium, tungsten, and chromium used to connect the photoconductor film and the photoelectric conversion cell. 2. The solid-state imaging device according to claim 1, wherein a light receiving section having no sensitivity is realized using the following. (4) Claim 1 is characterized in that a light receiving section having no sensitivity is realized by using a part of a wiring material having ohmic contact with a transparent electrode provided on a photoconductor film. The solid-state imaging device described. 3 base/(6) A light-receiving section with no sensitivity is realized by using a part of a shield material for blocking light provided above the transparent electrode provided on the photoconductor film. A solid-state imaging device according to claim 1. (6) A light receiving section without sensitivity is realized by irradiating high-velocity particles to a portion of the photoconductor film corresponding to at least one predetermined row of light receiving sections. A solid-state imaging device according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59100983A JPS60245166A (en) | 1984-05-18 | 1984-05-18 | Solid state image pick-up device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59100983A JPS60245166A (en) | 1984-05-18 | 1984-05-18 | Solid state image pick-up device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60245166A true JPS60245166A (en) | 1985-12-04 |
Family
ID=14288563
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59100983A Pending JPS60245166A (en) | 1984-05-18 | 1984-05-18 | Solid state image pick-up device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60245166A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS631349U (en) * | 1986-06-20 | 1988-01-07 | ||
| US8816265B2 (en) | 2010-03-31 | 2014-08-26 | Fujifilm Corporation | Solid-state image pickup device and image pickup apparatus |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55104176A (en) * | 1979-02-06 | 1980-08-09 | Matsushita Electric Ind Co Ltd | Solidstate pick up unit |
| JPS5861663A (en) * | 1981-10-08 | 1983-04-12 | Matsushita Electronics Corp | Manufacture of solid-state image pickup device |
| JPS58154977A (en) * | 1982-03-10 | 1983-09-14 | Matsushita Electric Ind Co Ltd | Solid-state image pickup element |
| JPS58223971A (en) * | 1982-06-23 | 1983-12-26 | Hitachi Ltd | Solid-state image pickup element |
-
1984
- 1984-05-18 JP JP59100983A patent/JPS60245166A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55104176A (en) * | 1979-02-06 | 1980-08-09 | Matsushita Electric Ind Co Ltd | Solidstate pick up unit |
| JPS5861663A (en) * | 1981-10-08 | 1983-04-12 | Matsushita Electronics Corp | Manufacture of solid-state image pickup device |
| JPS58154977A (en) * | 1982-03-10 | 1983-09-14 | Matsushita Electric Ind Co Ltd | Solid-state image pickup element |
| JPS58223971A (en) * | 1982-06-23 | 1983-12-26 | Hitachi Ltd | Solid-state image pickup element |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS631349U (en) * | 1986-06-20 | 1988-01-07 | ||
| JPH051081Y2 (en) * | 1986-06-20 | 1993-01-12 | ||
| US8816265B2 (en) | 2010-03-31 | 2014-08-26 | Fujifilm Corporation | Solid-state image pickup device and image pickup apparatus |
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