JPS6015700B2 - sputtering device - Google Patents
sputtering deviceInfo
- Publication number
- JPS6015700B2 JPS6015700B2 JP8557177A JP8557177A JPS6015700B2 JP S6015700 B2 JPS6015700 B2 JP S6015700B2 JP 8557177 A JP8557177 A JP 8557177A JP 8557177 A JP8557177 A JP 8557177A JP S6015700 B2 JPS6015700 B2 JP S6015700B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- target
- shield chamber
- sputtering
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Thin Magnetic Films (AREA)
Description
【発明の詳細な説明】 本発明は薄膜形成用のスパッタ装置に関する。[Detailed description of the invention] The present invention relates to a sputtering apparatus for forming thin films.
アルゴン等の不活性ガスィオンをターゲットに照射し、
ターゲット物質をスパッタしてこのターゲット近傍に配
置した基板に被着させるスパッタリング技術において従
来は主に平板二極スパッタ装置が用いられている。この
種のスパッタ装置では放電はターゲットと基板部との間
で行われ、従ってスパッタ中、基板はプラズマに露出さ
れており基板の温度上昇が必然的に発生する。また、反
応性スパッタリングにより金属化合物の薄膜を形成する
場合、従来のスパッタ装置ではアルゴン等の放電用ガス
に例えば酸素、窒素等を適量混入してスパッタリングを
行い母村金属の酸化物、窒化物等を得ていたが、この方
法によると母材金属で構成したターゲットの金属面が先
ず反応してしまい、この反応物をスパッタリングするこ
とになる。従って従釆の装置では金属化合物の薄膜の生
成速度が非常に低かった。また、生成速度を高めるため
に印加電力を増大すると基板の温度が上昇する問題があ
る。基板温度が上昇すると基板の変質、変形等の不都合
が生じるため、スパッタリングは基板温度を上昇させる
ことなく行われることが一般的に望まれる。従って本発
明は従来技術の上述の問題点を解決するものであり、本
発明の目的は、薄膜の被形成基板の温度上昇を減少させ
ることのできるスパッタ装置を提供することにある。Irradiates the target with inert gas ions such as argon,
Conventionally, a flat plate bipolar sputtering apparatus has been mainly used in sputtering technology in which a target material is sputtered and deposited on a substrate placed near the target. In this type of sputtering apparatus, a discharge occurs between a target and a substrate portion, and therefore, during sputtering, the substrate is exposed to plasma, and the temperature of the substrate inevitably increases. In addition, when forming a thin film of a metal compound by reactive sputtering, conventional sputtering equipment mixes an appropriate amount of oxygen, nitrogen, etc. into a discharge gas such as argon, and performs sputtering to form a thin film of a metal compound such as oxides or nitrides of the parent metal. However, according to this method, the metal surface of the target made of base metal reacts first, and this reactant is sputtered. Therefore, the production rate of a thin film of a metal compound was very low in the conventional device. Furthermore, when the applied power is increased to increase the generation rate, there is a problem in that the temperature of the substrate increases. Since an increase in substrate temperature causes problems such as deterioration and deformation of the substrate, it is generally desired that sputtering be performed without increasing the substrate temperature. Therefore, the present invention solves the above-mentioned problems of the prior art, and an object of the present invention is to provide a sputtering apparatus that can reduce the temperature rise of a substrate on which a thin film is formed.
本発明の他の目的は薄膜の生成速度が高いスパッタ装置
を提供することにある。Another object of the present invention is to provide a sputtering apparatus that can produce a thin film at a high rate.
上記目的を達成する本発明の特徴は、薄膜を形成すべき
基板と、該基板に対向して配置したターゲットと、該タ
ーゲットを内部に含むシールド室とを備え、プラズマス
パッタリングを行うスパッタ装置であって、前記シール
ド室は、前記基板に対向する位置に開□窓を備えると共
に、その壁の一部が導電性材料で構成されて成り、更に
前記ターゲットと前記導電性材料で構成されたシールド
室の壁との間に高電圧を印加する電源とを備えて成るこ
とにある。A feature of the present invention that achieves the above object is a sputtering apparatus that performs plasma sputtering and includes a substrate on which a thin film is to be formed, a target placed opposite to the substrate, and a shield chamber containing the target inside. The shield chamber is provided with an open window at a position facing the substrate, and a part of the wall thereof is made of a conductive material, and further includes the target and a shield chamber made of the conductive material. and a power source that applies a high voltage between the wall and the wall.
本発明はさらに、シールド室内部に対して不活性放電用
ガスを供給する機構と、シールド室と基板との間の領域
に対して反応ガスを供Ｖ給する機構を備えることが望ま
しい。It is preferable that the present invention further includes a mechanism for supplying an inert discharge gas to the inside of the shield chamber and a mechanism for supplying a reactive gas to an area between the shield chamber and the substrate.
以下図面を用いて本発明の実施例を説明する。Embodiments of the present invention will be described below with reference to the drawings.
添付図面は本発明の一実施例装置の概略説明図であり、
この図において、１は薄膜を形成すべき基板である。本
実施例においてこの基板１は磁気ディスク板であり従っ
て基板１の支持体２は矢印の如く回転し、基板１の円周
方向に沿って均一な薄膜、即ち本例では磁性体薄膜、を
形成するように構成されている。また、３はターゲット
、４はターゲット３の支持体である。本例ではターゲッ
トに鉄を用いているがこれはスパッタリングの用途に応
じて他の金属あるいはその化合物もしくはその他の無機
物等であっても良い。ターゲット３は、基板１の薄膜形
成部に対向した関口窓を有するシールド室５内に設けら
れている。このシールド室５の壁は本実施例では全体が
導電性材料例えばステンレススチールで構成されており
、このシールド室５の壁とターゲット３とは電源６を介
して電気的に接続されている。電源６はターゲット３側
に負極が接続された数千ボルトの直流電源であっても良
いし、あるいは図示の如く高周波発振源であっても良い
。さらに、シールド室５の内壁にはアルゴン等の放電用
不活性ガスを吐出するパイプ７が設けられている。The attached drawings are schematic explanatory diagrams of an apparatus according to an embodiment of the present invention.
In this figure, 1 is a substrate on which a thin film is to be formed. In this embodiment, the substrate 1 is a magnetic disk plate, and therefore the support 2 of the substrate 1 rotates as shown by the arrow to form a uniform thin film along the circumferential direction of the substrate 1, that is, a magnetic thin film in this embodiment. is configured to do so. Further, 3 is a target, and 4 is a support for the target 3. Although iron is used as the target in this example, other metals, compounds thereof, or other inorganic substances may be used depending on the purpose of sputtering. The target 3 is provided in a shield chamber 5 having a gate window facing the thin film forming portion of the substrate 1 . In this embodiment, the entire wall of the shield chamber 5 is made of a conductive material such as stainless steel, and the wall of the shield chamber 5 and the target 3 are electrically connected via a power source 6. The power source 6 may be a several thousand volt DC power source whose negative pole is connected to the target 3 side, or may be a high frequency oscillation source as shown in the figure. Furthermore, a pipe 7 is provided on the inner wall of the shield chamber 5 for discharging an inert gas for discharge such as argon.
このパイプ７は制御パイプ８を介して上記不活性ガス供
給源９、例えばアルゴンガスボンベ等に連結されている
。また、基板１とシールド室５との間の領域、即ちター
ゲット３から放射された原子がシールド室６を出てから
基板１に達するまでの間の領域に反応ガスを供給するよ
うに反応ガスの吐出口１０、制御バルブ１１、反応ガス
供給源１２（反応ガスボンベ）が設けられている。この
反応ガスは反応性スパッタリングを行うためのもので、
例えば窒化物の薄膜を形成する場合には窒素ガスであり
、酸化物の場合には酸素ガスである。また、１３はシャ
ツ夕、１４は導電性材料で構成された真空槽、１５は真
空ポンプに連絡されている排気口である。次に本実施例
装置の動作を説明する。This pipe 7 is connected via a control pipe 8 to the inert gas supply source 9, such as an argon gas cylinder. In addition, the reactive gas is supplied to the region between the substrate 1 and the shield chamber 5, that is, the region between when the atoms emitted from the target 3 leave the shield chamber 6 and reach the substrate 1. A discharge port 10, a control valve 11, and a reactive gas supply source 12 (reactive gas cylinder) are provided. This reactive gas is for reactive sputtering.
For example, when forming a thin film of nitride, nitrogen gas is used, and when forming an oxide film, oxygen gas is used. Further, 13 is a shirt, 14 is a vacuum chamber made of a conductive material, and 15 is an exhaust port connected to a vacuum pump. Next, the operation of the device of this embodiment will be explained.
１０‐かｏｒｒ程度のアルゴン等の不活性ガスをパイプ
７よりシールド室５に導入しながら−２〜瓜Ｖの負電圧
をターゲット３に印加すると、ターゲット３とシールド
室５の内壁との間で放電が起り、プラズマ中の正イオン
がターゲット３に衝突してスパッタリングが行われる。When an inert gas such as argon of about 10 orr is introduced into the shield chamber 5 from the pipe 7 and a negative voltage of -2 to 5 V is applied to the target 3, a voltage between the target 3 and the inner wall of the shield chamber 5 is applied. A discharge occurs, and positive ions in the plasma collide with the target 3 to perform sputtering.
ターゲット３より飛び出した原子はシールド室５の閉口
窓を通り抜けて基板１に到達し、斯くしたその基板上に
薄膜が形成される。この場合、基板１はプラズマにさら
されることがなく、従って基板の温度上昇をかなり抑え
ることができる。このため、従来技術の場合よりも大き
な電力を印加することができ、薄膜の生成速度を向上さ
せることができる。反応性スパッタリングを行う場合、
ターゲット３には金属を用い反応ガス吐出口１０より反
応すべきガス艮０ち酸化物を得る場合は酸素ガス、窒化
物を得る場合は窒素ガスを導入する。The atoms ejected from the target 3 pass through the closed window of the shield chamber 5 and reach the substrate 1, forming a thin film on the substrate. In this case, the substrate 1 is not exposed to plasma, and therefore the temperature rise of the substrate can be considerably suppressed. Therefore, it is possible to apply a larger amount of power than in the case of the prior art, and the rate of thin film production can be improved. When performing reactive sputtering,
A metal is used as the target 3, and the gas to be reacted is introduced through the reaction gas discharge port 10. Oxygen gas is introduced when obtaining an oxide, and nitrogen gas is introduced when obtaining a nitride.
これにより前述の如くシールド室５の関口窓を通り抜け
てくる金属原子は反応ガスと衝突して反応し、その化合
物が基板１上に薄膜として形成される。この場合、ター
ゲット３の近傍には不活性ガスが満たされているためタ
ーゲット面は反応ガスと反応して化合物を形成すること
がない。従って本装置によれば金属の薄膜を形成する場
合と同様の生成速度が化合物の薄膜を形成することがで
きる。因に従来技術によるスパッタ装置と本発明による
スパッタ装置を用いた場合の動作例及びその条件を示す
と以下の如くなる。As a result, as described above, the metal atoms passing through the entrance window of the shield chamber 5 collide with the reactive gas and react, and the compound is formed as a thin film on the substrate 1. In this case, since the vicinity of the target 3 is filled with inert gas, the target surface does not react with the reactive gas to form a compound. Therefore, according to the present apparatus, a thin film of a compound can be formed at a production rate similar to that for forming a thin film of a metal. Incidentally, an example of operation and conditions when using a sputtering apparatus according to the prior art and a sputtering apparatus according to the present invention are as follows.
ターゲット：２０仇仰ぐのＦｅ
不活性放電用ガス：〜５ｃｃ／分
反応ガス：ＱＩ０ｃｃ／分
ガス圧：５×１０‐汀ｏｒｒ
電 力：ＩＫＷ
基板：Ａ夕
生成速度：Ｑ・Ｆｅ２Ｑが０．０４仏ｍ／分〔本発明〕
ターゲット：２０仇仰ぐのＦｅ不活性放電用ガス：〜５
ｃｃ／分
反応ガス：０２１０ｃｃ／分
ガス圧：５×１０‐汀ｏｒｒ
電 力：ＩＫＷ
基板：Ａ夕
生成速度：Ｑ・Ｆｅ２０３が０．２一ｍ／分以上本発明
装置を実施例により説明したが、本発明装置において基
板は磁気ディスク板の他表面処理の必要なものであれば
どのようなものであっても良い。Target: 20 ml of Fe Inert discharge gas: ~5 cc/min Reaction gas: QI0 cc/min Gas pressure: 5 x 10-orr Power: IKW Substrate: A2 generation rate: Q・Fe2Q is 0.04 French m/min [present invention]
Target: 20 Fe inert discharge gas: ~5
cc/min Reaction gas: 0.210 cc/min Gas pressure: 5 x 10-orr Power: IKW Substrate: A-copper production rate: Q.Fe203 is 0.21 m/min or more The apparatus of the present invention was explained by examples. However, in the apparatus of the present invention, the substrate may be any substrate other than a magnetic disk plate as long as it requires surface treatment.
従ってこの場合、基板支持体の構成も前記実施例とは異
なることになる。またシールド室の壁も全て導電性材料
で構成する必要はなく、その一部、望ましくは閉口窓の
周囲部分のみを導電性材料で構成するかあるいはこのよ
うな導電性部材を付設し、これを陽極としても良い。Therefore, in this case, the structure of the substrate support will also be different from the above embodiment. In addition, the walls of the shield chamber do not need to be made entirely of conductive material; a portion of the wall, preferably only the area around the closed window, may be made of conductive material, or such a conductive member may be attached. It can also be used as an anode.
以上詳細に説明したように、本発明のスパッタ装置は基
板がプラズマにさらされないため基板の温度上昇をかな
り抑えることができると共にこれにより、印加電力を大
きくして薄膜生成速度を高めることが可能となる。As explained in detail above, the sputtering apparatus of the present invention can significantly suppress the temperature rise of the substrate because the substrate is not exposed to plasma, and as a result, it is possible to increase the applied power and increase the thin film production rate. Become.
またシールド室内が不活性ガスで満たされているため、
反応性スパッタリングを行う際に反応ガスが金属ターゲ
ットと反応することがなく、従って薄膜生成速度が飛躍
的に向上する。またこれにより、反応性能の制御、例え
ばターゲットが鉄（Ｆｅ）で構成されている場合その酸
化物Ｆｅ２０３，Ｆｅ３０４を選択的に形成する制御を
行うことが可能となり、本発明の効果は非常に大なるも
のである。Also, since the shield chamber is filled with inert gas,
When performing reactive sputtering, the reactive gas does not react with the metal target, so the thin film production rate is dramatically improved. Moreover, this makes it possible to control the reaction performance, for example, when the target is composed of iron (Fe), to selectively form the oxides Fe203 and Fe304, and the effect of the present invention is very large. It is what it is.
図は本発明の一実施例の概略説明図である。
１・・・・・・基板、２・・…・基板支持体、３・・・
・・・ターゲット、４・・・・・・ターゲット支持体、
５・…・・シールド室、６・・・・・・電源、７・・…
・パイプ、８，１１・・・・・・制御バルブ、９・・・
・・・不活性ガス供給源、１０・・・・・・反応ガス吐
出口、１２・・・・・・反応ガス供給源、１３・・・・
・・シャツ夕、１４・・・・・・真空槽、１５・・・・
・・排気口。The figure is a schematic explanatory diagram of an embodiment of the present invention. 1...Substrate, 2...Substrate support, 3...
...Target, 4...Target support,
5... Shield room, 6... Power supply, 7...
・Pipe, 8, 11... Control valve, 9...
... Inert gas supply source, 10 ... Reaction gas discharge port, 12 ... Reaction gas supply source, 13 ...
...Shirt evening, 14...Vacuum tank, 15...
··exhaust port.
Claims (1)
たターゲツトと、該ターゲツトを内部に含むシールド室
とを備え、プラズマスパツタリングを行うスパツタ装置
であつて、前記シールド室は、前記基板に対向する位置
に開口窓を備えると共に、その壁の一部が導電性材料で
構成されて成り、更に前記ターゲツトと前記導電性材料
で構成されたシールド室の壁との間に高電圧を印加する
電源とを備えて成ることを特徴とするスパツタ装置。 ２ 前記シールド室内部に対して不活性放電用ガスを供
給する機構と、前記シールド室と前記基板との間の領域
に対して反応ガスを供給する機構とをさらに備えた特許
請求の範囲第１項記載のスパツタ装置。[Scope of Claims] 1. A sputtering apparatus for performing plasma sputtering, comprising a substrate on which a thin film is to be formed, a target disposed opposite to the substrate, and a shield chamber containing the target therein, comprising: The shield chamber is provided with an opening window at a position facing the substrate, and a part of the wall thereof is made of a conductive material, and further includes the target and a wall of the shield chamber made of the conductive material. A sputtering device characterized by comprising: a power source that applies a high voltage between the two. 2. Claim 1 further comprising: a mechanism for supplying an inert discharge gas to the inside of the shield chamber; and a mechanism for supplying a reactive gas to a region between the shield chamber and the substrate. The sputtering device described in Section 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8557177A JPS6015700B2 (en) | 1977-07-19 | 1977-07-19 | sputtering device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8557177A JPS6015700B2 (en) | 1977-07-19 | 1977-07-19 | sputtering device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5420975A JPS5420975A (en) | 1979-02-16 |
| JPS6015700B2 true JPS6015700B2 (en) | 1985-04-20 |
Family
ID=13862489
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8557177A Expired JPS6015700B2 (en) | 1977-07-19 | 1977-07-19 | sputtering device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6015700B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10860496B2 (en) * | 2017-04-17 | 2020-12-08 | EMC IP Holding Company LLC | Method, apparatus and computer readable medium for building multi-tier flash cache by using spare flash drives and clean user data is flushed from main flash cache to one of the spare flash drives that only stores the clean user data, wherein the main flash cache is configured as one or more pairs of flash drives and the one of the spare flash drives is allocated as single drive to secondary flash cache |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56130470A (en) * | 1980-03-14 | 1981-10-13 | Hitachi Ltd | Sputtering apparatus |
| JPS57111031A (en) * | 1980-12-27 | 1982-07-10 | Clarion Co Ltd | Sputtering device |
| DE3331707A1 (en) * | 1983-09-02 | 1985-03-21 | Leybold-Heraeus GmbH, 5000 Köln | METHOD AND DEVICE FOR REACTIVELY SPRAYING CONNECTIONS FROM METALS AND SEMICONDUCTORS |
| DE3440634C2 (en) * | 1984-11-07 | 1986-09-11 | J.M. Voith Gmbh, 7920 Heidenheim | Device for double-sided coating of moving webs |
| JPS63161162A (en) * | 1986-12-23 | 1988-07-04 | Toshiba Corp | Sputtering device |
| JP7134112B2 (en) * | 2019-02-08 | 2022-09-09 | 東京エレクトロン株式会社 | Film forming apparatus and film forming method |
-
1977
- 1977-07-19 JP JP8557177A patent/JPS6015700B2/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10860496B2 (en) * | 2017-04-17 | 2020-12-08 | EMC IP Holding Company LLC | Method, apparatus and computer readable medium for building multi-tier flash cache by using spare flash drives and clean user data is flushed from main flash cache to one of the spare flash drives that only stores the clean user data, wherein the main flash cache is configured as one or more pairs of flash drives and the one of the spare flash drives is allocated as single drive to secondary flash cache |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5420975A (en) | 1979-02-16 |
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