JPS6015637A - Resist film developing method - Google Patents

Abstract

PURPOSE:To enable automation of a process line and development of a uniform and stable resist film by developing the substrate to be developed with the resist side down, by allowing a developing soln. to flow upward from the bottom of a vessel. CONSTITUTION:The bottom 22 of a vessel 21 is provided with the introduction paths of a developing soln. 23 to introduce the soln. into the vessel 21. The inner wall of the bottom 22 is made of a porous material to inject the soln. 15 always into the vessel 21 through the pores of the porous material. When the vessel 21 is filled with the sol. 15 fed through a pipe 24, the soln. flows out over the surrounding wall and through a central drain pipe 26, received with a receiving tray 27, and discharged. The side of a substrate 28 reverse to the resist to be developed is held with a vacuum chuck, and the side coated with the resist film 29 is directed downward and immersed in the soln. 15 in the vessel 21 for a prescribed time to develop the film 29.

Description

DETAILED DESCRIPTION OF THE INVENTION (a) Technical Field of the Invention The present invention relates to a method for developing a resist film, and in particular to a method for developing a resist film, particularly for positive V! /
This invention relates to an improvement in the developing method of Nuto-Ari.

(1)> Background of the Technology In precision microfabrication technology, particularly in the manufacturing process of semiconductor integrated circuits, resist is often applied to a substrate and patterned by exposing and developing the resist. At the same time, with the aim of improving characteristics through economical efficiency and speeding up, substrates are becoming larger in diameter and patterns are becoming more integrated. There is a need to eliminate unevenness.

(C) Prior Art and Problems As a conventional method for developing a resist film, a developer is placed in a developer tank, a substrate having a plurality of resist coated surfaces is placed on a carrier holder, and the substrate is immersed in the developer gjA hinoki. Develop the resist film.

There are the so-called immersion method and the so-called spin development method, in which a developing solution is dropped onto a substrate having a resist-coated surface that rotates once from a developing solution dripping nozzle. A configuration diagram is shown. In the same figure, l
2 is a developer tank, 2 is a carrier holder, 3 is a substrate having, for example, a positive resist coating surface, and 4 is a developer.

As is clear from the figure, this developing method is a batch process, and there are problems in that it is difficult to automate the infin process, as well as consumption of the developer due to the reaction of the developer with carbon dioxide gas in the air, and management of developer replacement. Furthermore, there were problems such as uneven development due to the undulating overflow phenomenon of the developer during the development process.

Figure 2 shows a schematic diagram of the conventional Nupin development method.
A Y diagram is shown. In the figure, 5 is a nozzle for dropping a developer, and 6 is, for example, a positive resist film coated on a substrate 7. The nozzle 5 is located above the center of rotation of the substrate 7. 8 is a mounting table on which the substrate 7 is placed; 9 is a vacuum chuck disposed on the lower surface of the mounting table 8; 10 is a drive motor for rotating the vacuum chuck 9 and the mounting table 8;
Reference numeral 11 indicates a side wall of the main body of the developing device, and reference numeral 12 indicates a drain hole for discharging the scattered developer.

When performing conventional spin development using an apparatus configured as described above, the substrate 7 coated with a predetermined positive resist film 6, for example, is placed on the mounting table 8 with the drive motor 10 stopped, and placed on the vacuum chuck 9. The resist film is fixed by suction and fixed by the drive motor IO.While the substrate 7 is being rotated at a predetermined speed, a developer is dripped onto the surface of the substrate 7 from a nozzle 5 provided on the rotation center of the substrate 7 to form the resist film. Develop 6.

In-line automation is possible in such a developing method.

However, in the spin development method described above, the substrate 7
There is a difference in dimensional accuracy between the resist pattern at the center of the substrate 7 and the resist pattern at the side edges due to the time difference in the developer spreading from the center to the side edges and the freshness of the developer supplied to the center. Especially for large-diameter boards, the board 7
There was a problem in that it was difficult to develop uniformly the entire image.

((1) Object of the Invention The object of the present invention was made in view of the above problems, and is to provide a method for developing a resist film that is uniform and stable and that can be automated in-line.

(e) Structure of the Invention In order to achieve the object, the method of developing a film of the present invention is to immerse a substrate to be developed with the resist-coated surface facing downward in a container into which a developer flows from the bottom. It is characterized by being developed. A further feature is that gas is ejected from the bottom for stirring.

(f) Examples of the invention Embodiments of the present invention will be described below with reference to the drawings.

FIG. 8 is a schematic configuration diagram for explaining one embodiment of the present invention, and FIG. 4 is a schematic configuration diagram for explaining another embodiment of the present invention.

In FIG. 3, the bottom surface 22 of the container 21 has a developer introduction passage 2.
8 is provided, and a developer is supplied from an introduction pipe 24. The inner wall of the bottom surface 22 is made of a porous member, and has a structure in which water is constantly ejected into the container 21 through the porous holes. The developer 25 is supplied from the introduction pipe 24 to the container 21.
When the container 21 is filled with water, the drain pipe 26 at the periphery and center of the container 21
The developing solution 25 is structured to allow more flow out, and the developer 25 that flows out is removed by a tray 27. The outflow mechanism may be provided by either the peripheral or central drain pipe 26.

Using the developing device configured as described above, the surface of the substrate to be developed 28 that is not coated with the resist is held by suction using a vacuum chuck (not shown), and the surface of the substrate coated with the resist film 2□9 is held. The resist film 29 is developed by immersing the resist film 29 in the developer solution filled in the container 21 for a predetermined time while facing downward as shown in the figure.

In such a developing/imaging method, a resist boat 2' is placed on the developing solution surface.
9 is immersed at the same time, and new developer is always added to the bottom 2S.
Since the resist film 29 is uniformly supplied to the inner wall of the resist film 29, the development of the resist film 29 becomes uniform even in the center and side edges, making it possible to develop the resist film 29 with desired pattern accuracy. Additionally, in-line automation is possible due to single-sheet processing.

Next, the developing method shown in FIG. 4 will be explained.

In the same figure, a developer introduction pipe 32 is provided on the side wall of the container 31, a gas flow passage 35 having a plurality of gas ejection holes 34 is provided at f=1 on the bottom surface 83 of the container 81, and a gas introduction pipe 36 is provided on the bottom surface 83 of the container 81. For example, the mechanism is such that nitrogen (N2) gas is introduced.

When developing Regis) +I3 using a developing device having such a structure, first the developer 87 is introduced into the container 81 from the developer introduction tube 32, and the inside of the container 31 is filled and there is no overflow from the surrounding area. The developer solution that flows out is removed by the tray 38.

Furthermore, nitrogen gas, for example, is introduced through the gas introduction pipe 36, and the gas is ejected from the gas ejection hole 34 to bubble and stir the developer 37 in the container 31. Next, as described above, the substrate 39 to be developed is developed by immersing the substrate 39 in a developer solution for a predetermined period of time with the surface coated with the resist film 40 facing downward as shown in the figure. In this developing method, the entire resist film 40 is immersed in the developer 37 at the same time, and fresh solution is always supplied.

Furthermore, due to the stirring mechanism using gas bubbles, the resist film 40
This allows for faster and more uniform development. Of course, in-line automation is possible for single-sheet processing.

(2) Detailed Description of the Invention According to the present invention, it is possible to automate the infin process, and it is possible to develop a uniform and stable resist film, which is effective in improving reliability, improving yield, and improving efficiency.

[Brief explanation of the drawing]

1 and 2 are schematic configuration diagrams for explaining a conventional developing method, FIG. 3 is a schematic configuration diagram for explaining an embodiment/11゛α example of the present invention, and FIG. 4 is a schematic diagram for explaining the present invention. This is a schematic configuration diagram for explaining another embodiment. In the figure, 21 and 31 are containers, 22 and 33 are bottom surfaces, 23 is a developer introduction path, 24 is an introduction pipe, 28 and 39 are substrates to be developed, 29 and 40 are resist films, 32 is a developer introduction tube, 34 is a gas ejection hole, 35 is a gas flow path, and 86 is a gas introduction tube. Figure 1 Figure 2↓ Figure 3 FQ Figure 4

Claims (1)

[Claims] α) A substrate to be developed with the resist coated side facing downward is immersed in a container into which a developer flows from the bottom. A method for developing a resist film, the method comprising: developing a resist film. (2) The method for developing a resist film as set forth in claim 1, characterized in that gas is ejected from the bottom surface for stirring.