JPS60154394A - 半導体メモリのビツト線負荷 - Google Patents

半導体メモリのビツト線負荷

Info

Publication number
JPS60154394A
JPS60154394A JP59198388A JP19838884A JPS60154394A JP S60154394 A JPS60154394 A JP S60154394A JP 59198388 A JP59198388 A JP 59198388A JP 19838884 A JP19838884 A JP 19838884A JP S60154394 A JPS60154394 A JP S60154394A
Authority
JP
Japan
Prior art keywords
bit line
transistor
coupled
column
semiconductor memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59198388A
Other languages
English (en)
Japanese (ja)
Other versions
JPH036599B2 (https=
Inventor
キム、シー、ハーデイー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Inmos Corp
Original Assignee
Inmos Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Inmos Corp filed Critical Inmos Corp
Publication of JPS60154394A publication Critical patent/JPS60154394A/ja
Publication of JPH036599B2 publication Critical patent/JPH036599B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
JP59198388A 1983-09-21 1984-09-21 半導体メモリのビツト線負荷 Granted JPS60154394A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US53448483A 1983-09-21 1983-09-21
US534484 1983-09-21
US633091 1984-07-25

Publications (2)

Publication Number Publication Date
JPS60154394A true JPS60154394A (ja) 1985-08-14
JPH036599B2 JPH036599B2 (https=) 1991-01-30

Family

ID=24130251

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59198388A Granted JPS60154394A (ja) 1983-09-21 1984-09-21 半導体メモリのビツト線負荷

Country Status (1)

Country Link
JP (1) JPS60154394A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63247992A (ja) * 1986-09-29 1988-10-14 フィリップス　エレクトロニクス　ネムローゼ　フェンノートシャップ 集積メモリ回路

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54148442A (en) * 1978-05-15 1979-11-20 Nec Corp Memory unit
JPS55132589A (en) * 1979-03-30 1980-10-15 Fujitsu Ltd Semiconductor memory unit
JPS57117181A (en) * 1981-11-24 1982-07-21 Hitachi Ltd Semiconductor load circuit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54148442A (en) * 1978-05-15 1979-11-20 Nec Corp Memory unit
JPS55132589A (en) * 1979-03-30 1980-10-15 Fujitsu Ltd Semiconductor memory unit
JPS57117181A (en) * 1981-11-24 1982-07-21 Hitachi Ltd Semiconductor load circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63247992A (ja) * 1986-09-29 1988-10-14 フィリップス　エレクトロニクス　ネムローゼ　フェンノートシャップ 集積メモリ回路

Also Published As

Publication number Publication date
JPH036599B2 (https=) 1991-01-30

Similar Documents

Publication Publication Date Title
USRE35154E (en) Bit line and column circuitry used in a semiconductor memory
US7705677B2 (en) CMOS amplifiers with frequency compensating capacitors
US4973864A (en) Sense circuit for use in semiconductor memory
USRE37176E1 (en) Semiconductor memory
US6515461B2 (en) Voltage downconverter circuit capable of reducing current consumption while keeping response rate
US6456548B2 (en) Sense amplifier circuit and semiconductor storage device
US5966319A (en) Static memory device allowing correct data reading
US4555777A (en) Sense amplifier circuit for dynamic read/write memory
EP0639000B1 (en) Flip-flop type amplifier circuit
KR970001344B1 (ko) 반도체 메모리 장치
KR0129790B1 (ko) 개량된 증폭기 회로와 그것을 이용한 반도체 기억장치
US5323349A (en) Dynamic semiconductor memory device having separate read and write data bases
US5506522A (en) Data input/output line sensing circuit of a semiconductor integrated circuit
US6549470B2 (en) Small signal, low power read data bus driver for integrated circuit devices incorporating memory arrays
US6292418B1 (en) Semiconductor memory device
KR950008446B1 (ko) 랜덤 액세스 메모리 소자
US5715204A (en) Sense amplifier with hysteresis
JPH01503030A (ja) 電流検出差動増幅器
JP2756797B2 (ja) Ｆｅｔセンス・アンプ
KR950005171B1 (ko) 전류 미러 증폭회로 및 그의 구동 방법
US5724299A (en) Multiport register file memory using small voltage swing for write operation
JPH09153285A (ja) 増幅回路および相補型増幅回路
US6243314B1 (en) Apparatus for sensing a current direction of an input signal and amplifying the sensed input signal in semiconductor memory device
US4541077A (en) Self compensating ROM circuit
US6657909B2 (en) Memory sense amplifier

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees