JPS60142579A - Manufacture of light conducting film - Google Patents
Manufacture of light conducting filmInfo
- Publication number
- JPS60142579A JPS60142579A JP58250819A JP25081983A JPS60142579A JP S60142579 A JPS60142579 A JP S60142579A JP 58250819 A JP58250819 A JP 58250819A JP 25081983 A JP25081983 A JP 25081983A JP S60142579 A JPS60142579 A JP S60142579A
- Authority
- JP
- Japan
- Prior art keywords
- cadmium
- thin film
- vapor pressure
- cadmium chloride
- chloride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- YKYOUMDCQGMQQO-UHFFFAOYSA-L cadmium dichloride Chemical compound Cl[Cd]Cl YKYOUMDCQGMQQO-UHFFFAOYSA-L 0.000 claims abstract description 58
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000006104 solid solution Substances 0.000 claims abstract description 13
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims abstract description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052802 copper Inorganic materials 0.000 claims abstract description 9
- 239000010949 copper Substances 0.000 claims abstract description 9
- 229920006395 saturated elastomer Polymers 0.000 claims abstract description 8
- 239000000203 mixture Substances 0.000 claims abstract description 6
- 239000010409 thin film Substances 0.000 claims description 32
- 230000004913 activation Effects 0.000 claims description 14
- 238000001704 evaporation Methods 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 239000013078 crystal Substances 0.000 abstract description 5
- 239000002250 absorbent Substances 0.000 abstract description 4
- 230000002745 absorbent Effects 0.000 abstract description 4
- JLATXDOZXBEBJX-UHFFFAOYSA-N cadmium(2+);selenium(2-);sulfide Chemical compound [S-2].[Se-2].[Cd+2].[Cd+2] JLATXDOZXBEBJX-UHFFFAOYSA-N 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract description 2
- 229910052793 cadmium Inorganic materials 0.000 abstract 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 abstract 1
- 238000001994 activation Methods 0.000 description 13
- 239000010408 film Substances 0.000 description 5
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- 150000001661 cadmium Chemical class 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 229960003280 cupric chloride Drugs 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は硫化カドミウム−セレン化カドミウム固溶体を
主体とする光導電性薄膜すなわち光センサ薄膜の製造方
法に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for producing a photoconductive thin film, that is, a photosensor thin film, mainly composed of a cadmium sulfide-cadmium selenide solid solution.
従来例の構成とその問題点
従来より硫化カドミウム−セレン化カドミウム固溶体を
主体として、これに少量の銅を含有した薄膜を基板上に
形成し、これを５００〜６００”Ｃの高温度下で塩化カ
ドミウムの飽和蒸気中で加熱し、結晶成長と共に光導電
性を伺与する活性化のプロセスによって光導電性薄膜す
なわち光センサを作製できることはよく知られている。Conventional Structure and Problems Conventionally, a thin film mainly composed of cadmium sulfide-cadmium selenide solid solution containing a small amount of copper is formed on a substrate, and this is chlorinated at a high temperature of 500 to 600"C. It is well known that photoconductive thin films, or optical sensors, can be fabricated by heating in saturated cadmium vapor and an activation process that imparts photoconductivity along with crystal growth.
このような材料と製法で得られる光導電性薄膜は、セレ
ン化カドミウムの固溶濃度を適当に選べば、可視全域の
光によく感応させることができ、また銅濃度を適当に選
べば、光電流と暗電流との比いわゆる明暗比を十分大き
くすることができる。Photoconductive thin films obtained using such materials and manufacturing methods can be made sensitive to light in the visible range by appropriately selecting the solid solution concentration of cadmium selenide, and can be made sensitive to light in the visible range by appropriately selecting the copper concentration. The ratio between current and dark current, so-called brightness ratio, can be made sufficiently large.
しかしながら、比較的弱い光に対しての応答特性、すな
わち光を照射して後の電流の立上シや光を切って後の電
流の立下りが遅いという欠点がある。However, there is a drawback in that the response characteristics to relatively weak light are slow, that is, the rise of the current after irradiation with light is slow, and the fall of the current after turning off light is slow.
上記の製法で得られる応答特性は、たとえばセレン化カ
ドミウムの分量が４０モモル係銅の分量が０．０１モモ
ル係、膜厚が４０００人、活性化温度が５２０”Ｃの光
導電性薄膜で３０ルツクスの光（波長６″６５ｎｍのＬ
ＥＤ単色光）を照射した場合、光電流の立上シ、立下り
時間は共に２６ミリ秒であった。なお上記光電流の立土
シ時間とは、光を照射し始めて後電流が飽和値の９０％
に達する迄の時間、立下り時間とは、光を切って後電流
が飽和値の１０％に減少するまでの時間を意味する。The response characteristics obtained by the above manufacturing method are, for example, 30% for a photoconductive thin film in which the amount of cadmium selenide is 40 mmol, the amount of copper oxide is 0.01 mmol, the film thickness is 4000 mm, and the activation temperature is 520''C. Lux light (wavelength 6″65nm L)
When irradiated with ED monochromatic light, both the rise and fall times of the photocurrent were 26 milliseconds. The above-mentioned photocurrent standing time is the time when the current after starting to irradiate light is 90% of the saturation value.
The fall time means the time it takes for the current to decrease to 10% of the saturation value after the light is turned off.
上記応答上の欠点は固溶体中セレン化カドミウムの分量
を増やすことによって除くことができるが、この場合に
は応答が早くなる代シに短い波長の光に感応しなくなり
、カラー用として使い難くなるなどの欠点が生じる。The above-mentioned drawbacks in response can be eliminated by increasing the amount of cadmium selenide in the solid solution, but in this case, the response becomes faster, but it becomes less sensitive to short wavelength light, making it difficult to use for color applications. disadvantages arise.
発明の目的
本発明は、感光波長域がそのまますなわち固溶体中のセ
レン化カドミウムの分量が同じもので通常の製法で得ら
れる光導電性薄膜に比べて、応答特性の優れた薄膜を得
る製法を提供することを目的とする。Purpose of the Invention The present invention provides a manufacturing method for obtaining a photoconductive thin film with excellent response characteristics compared to a photoconductive thin film obtained by a conventional manufacturing method in which the photoconductive wavelength range is the same, that is, the amount of cadmium selenide in the solid solution is the same. The purpose is to
発明の構成
本発明は、基板上に形成した硫化カドミウム−セレン化
カドミウム固溶体を主体とし、これに少量の銅を含有し
た薄膜を、半密閉容器に入れ、高温度で塩化カドミウム
蒸気の雰囲気中にて結晶成長させ光導電性を付与する活
性化に際して、塩化カドミウムの蒸気圧が前記高温度で
の飽和蒸気圧の５０％以下であるようにコントロールし
て作製することを特徴としている。Structure of the Invention The present invention consists of a thin film mainly consisting of a cadmium sulfide-cadmium selenide solid solution formed on a substrate and containing a small amount of copper, placed in a semi-closed container, and exposed to an atmosphere of cadmium chloride vapor at high temperature. During activation to grow crystals and impart photoconductivity, the vapor pressure of cadmium chloride is controlled to be 50% or less of the saturated vapor pressure at the high temperature.
実施例の説明
活性化温度での塩化カドミウムの蒸気圧を飽和蒸気圧の
６０％以下としたのは、５０％を越えては活性化を抑制
してその結果応答速度を早めるという効果が小さいから
である。半密閉容器中で塩化カドミウムの蒸気圧を飽和
蒸気圧より低くする有効な方法は、塩化カドミウムの蒸
発源と薄膜との中間に硫化カドミウムやセレン化カドミ
ウムあるいはこれらの混合物をおき塩化カドミウム蒸気
の一部分または大部分を吸収して薄膜部分での有効蒸気
圧を減らすことである。活性化に必要な塩化カドミウム
の分量は１００Ｘ１０−３〜１ｊｉ／１で、吸収剤とし
ての硫化カドミウム、セレン化カドミウムあるいはこれ
らの混合物の分量は蒸発源塩化カドミウムの１０〜３０
重量倍程度が好ましい。塩化カドミウムの分量が上記範
囲よシ少ながったシ、硫化カドミウムなどの吸収剤の分
量が上記範囲よシ多い場合には活性化不足が生じ結晶成
長が不十分で光電流が小さくなシ、また塩化カドミウム
の分量が上記範囲より多かったり、吸収剤の分量が上記
範囲より少ない場合には活性化過剰となり結晶が成長し
過ぎてピンホールを生じ、そのために光電流が小さくな
ってしまう。Description of Examples The reason why the vapor pressure of cadmium chloride at the activation temperature was set to be 60% or less of the saturated vapor pressure is because if it exceeds 50%, the effect of suppressing activation and speeding up the response speed will be small. It is. An effective method for lowering the vapor pressure of cadmium chloride below the saturated vapor pressure in a semi-closed container is to place cadmium sulfide, cadmium selenide, or a mixture thereof between the cadmium chloride evaporation source and the thin film, and to absorb a portion of the cadmium chloride vapor. Alternatively, the effective vapor pressure in the thin film region may be reduced by absorbing most of the vapor. The amount of cadmium chloride required for activation is 100X10-3 to 1ji/1, and the amount of cadmium sulfide, cadmium selenide, or a mixture thereof as an absorbent is 10 to 30 times the amount of cadmium chloride as the evaporation source.
It is preferably about twice the weight. If the amount of cadmium chloride is less than the above range, or if the amount of absorbent such as cadmium sulfide is more than the above range, activation will be insufficient, crystal growth will be insufficient, and photocurrent will be small. Furthermore, if the amount of cadmium chloride is greater than the above range, or if the amount of absorbent is less than the above range, the activation will be excessive and crystals will grow too much, resulting in pinholes, which will reduce the photocurrent.
固溶体薄膜中の銅の分量は０．００５〜０．１モル饅が
好ましい。０．００５モル係よシ少ないと暗電流が大き
く、したがって光電流の立下りが大きくなり、また０、
１モル係より多いと光電流そのものが小さくなってしま
うからである。薄膜の膜厚は２０００〜８ｏ０〇八であ
ることが好ましい。The amount of copper in the solid solution thin film is preferably 0.005 to 0.1 mol. When the amount is less than 0.005 molar, the dark current becomes large, and therefore the fall of the photocurrent becomes large.
This is because if the amount is more than 1 molar, the photocurrent itself becomes small. The thickness of the thin film is preferably 2000 to 8008.
２０００人よシ薄いと光電流が小さくなってしまい、５
ｏｏｏ人よシ厚いと光電流の立下シが長くなる傾向があ
る。また活性化温度は、４５０〜５８０ ”Ｃが好まし
い。４５０ ”Ｃより低いと活性化が不十分で光電流が
小さく、５８０“°Ｃより高いと逆に活性化が過剰で膜
中にピンホールを生じてそのため光電流が小さくなって
し丑うからである。If it is thinner than 2,000 people, the photocurrent will be small, and 5
ooo If the wire is thicker, the fall of the photocurrent tends to be longer. The activation temperature is preferably 450 to 580"C. If it is lower than 450"C, the activation will be insufficient and the photocurrent will be small; if it is higher than 580"C, the activation will be excessive and pinholes will occur in the film. This is because the photocurrent becomes smaller.
以上のような条件下で塩化カドミウムの蒸気圧を減少さ
せて作った光導性薄膜は、飽和蒸気圧下で作った薄膜に
比べて光電流の大きさ、分光感度、温度特性などが変ら
ないま＼で光電流の立下りが数分の１と短くすることが
できる。A photoconductive thin film made by reducing the vapor pressure of cadmium chloride under the above conditions has the same photocurrent magnitude, spectral sensitivity, temperature characteristics, etc. as compared to a thin film made under saturated vapor pressure. With this, the fall of the photocurrent can be reduced to a fraction of the time.
以下、本発明を一実施例により説起する。The present invention will be explained below by way of an example.
実施例
ガラス基板（コーニング社７０５９）上に硫化カドミウ
ム、セレン化カドミウム、それに銅を含有する固溶体（
セレン化カドミウム４０モル係、銅０．０１モル％）の
薄膜を真空蒸着法にて形成した。膜厚は約４０００八で
あった。この蒸着膜を半密閉容器中に入れ、４ｏＯｒｎ
ｇ／ｌ（容器）の塩化カドミウムを底部に置き、蒸着膜
と塩化第２銅との間に５胴ギヤツプ、２０關長の狭あい
部分を設け、この部分に塩化カドミウム４ｏｏｔｎｇに
対して８ｇの硫化カドミウムを敷き、容器を５００”Ｑ
で約５０分間加熱した。このようにして活性化した薄膜
に、幅とギャップの比が２対１である様にＡＩの対向電
極を蒸着形成した。この光導電性薄膜に６５５ｎｍ、３
０ルツクスの光を照射したら光電流は１２μＡ５その立
上り、立下り時間はそれぞれ２０ミリ秒、１０ミリ秒で
あった。活性化温度が６５０“°Ｃの場合には光電流は
１ｏμＡでその立上り、立下り時間はそれぞれ２６ミリ
秒、７ミリ秒であった。Example A solid solution containing cadmium sulfide, cadmium selenide, and copper was deposited on a glass substrate (Corning Corporation 7059).
A thin film of 40 mol % of cadmium selenide and 0.01 mol % of copper was formed by vacuum evaporation. The film thickness was approximately 4,000. This vapor-deposited film was placed in a semi-closed container, and
g/l (container) of cadmium chloride is placed at the bottom, a 5-body gap and a narrow part of 20 gap length is provided between the vapor deposited film and cupric chloride, and 8 g of cadmium chloride is placed in this part for 4 ootng of cadmium chloride. Lay cadmium sulfide and set the container to 500”Q.
It was heated for about 50 minutes. A counter electrode of AI was formed on the thus activated thin film by vapor deposition so that the width to gap ratio was 2:1. This photoconductive thin film was coated with 655 nm, 3
When irradiated with 0 lux light, the photocurrent was 12 μA5, and its rise and fall times were 20 milliseconds and 10 milliseconds, respectively. When the activation temperature was 650"°C, the photocurrent had a rise time of 1 μA and a fall time of 26 milliseconds and a fall time of 7 milliseconds, respectively.
比較のため同じ様に蒸着薄膜を準備して、硫化カドミウ
ムを敷かない標準製法で活性化した試料を準備した。同
じ条件下で特性を測定したら５００“Ｃ活性化の場合に
光電流は１４ Ｉｔ Ａ、その立上り、立下り時間はそ
れぞれ２５ミリ秒、２０ミリ秒であった。５６０“′Ｃ
の場合には光電流は１２μＡでその立上り、立下り時間
はそれぞれ３０ミリ秒、２ｏミリ秒であった◇
発明の効果
上記実施例から明らかな様に本発明の製法で得られる光
導電性薄膜は従来の製法で得られるものに比べてその光
電流の立下り時間が１７２〜１／４に旬縮される。For comparison, a sample was prepared in which a vapor-deposited thin film was prepared in the same way and activated using the standard manufacturing method without cadmium sulfide. When the characteristics were measured under the same conditions, in the case of activation at 500"C, the photocurrent was 14 It A, and its rise and fall times were 25 ms and 20 ms, respectively. 560"'C
In the case of , the photocurrent was 12 μA, and the rise and fall times were 30 milliseconds and 20 milliseconds, respectively. ◇ Effects of the Invention As is clear from the above examples, the photoconductive thin film obtained by the production method of the present invention The fall time of the photocurrent is shortened to 172 to 1/4 compared to that obtained by conventional manufacturing methods.
Claims (5)
を主体とし、銅を添加含有させた薄膜を基板上に形成し
、この薄膜を半密閉容器に入れ、高温度にて塩化カドミ
ウムの蒸気に暴露して結晶成長させ、光導電性を付与す
る活性化に際して、前記塩化カドミウムの蒸気圧が前記
高温度での飽和蒸気圧の６０％以下であることを特徴と
する光導電性薄膜の製造方法。(1) A thin film mainly consisting of a solid solution of cadmium sulfide and cadmium selenide with added copper is formed on a substrate, and this thin film is placed in a semi-closed container and exposed to cadmium chloride vapor at high temperature. A method for producing a photoconductive thin film, characterized in that the vapor pressure of the cadmium chloride is 60% or less of the saturated vapor pressure at the high temperature during activation for imparting photoconductivity.
チ、薄膜の膜厚が２０００〜５ｏｏｏ人、活性化温度が
４６０〜６８０℃であることを特徴とする特許請求の範
囲第１項記載の光導電性薄膜の製造方法。(2) Claim 1, characterized in that the amount of copper is 0.005 to 0.1 molty in the total amount of the solid solution, the thickness of the thin film is 2000 to 500 mm, and the activation temperature is 460 to 680°C. A method for producing a photoconductive thin film as described in .
ミウムかセレン化カドミウムあるいはそれらの混合物を
置き、薄膜の置かれた場所での塩化カドミウムの蒸気圧
を減少させることを特徴とする特許請求の範囲第２項記
載の光導電性薄膜の製造方法。(3) A patent claim characterized in that cadmium sulfide, cadmium selenide, or a mixture thereof is placed between the cadmium chloride evaporation source and the thin film to reduce the vapor pressure of cadmium chloride at the location where the thin film is placed. A method for producing a photoconductive thin film according to item 2.
０−５〜１ｇ ” ｌ ％硫化カドミウムかセレン化カ
ドミウムあるいはそれらの混合物の分量が塩化カドミウ
ム１ｇに対して１０〜４０９であることを特徴とする特
許請求の範囲第３項記載の光導電性薄膜の製造方法。(4) The amount of cadmium chloride is 100x1 in a semi-closed container.
The photoconductive thin film according to claim 3, characterized in that the amount of cadmium sulfide, cadmium selenide, or a mixture thereof is 10 to 409% per gram of cadmium chloride. manufacturing method.
間を５〜１０＋ａ、長さを１０〜２０ ｍｍにして、こ
の部分に硫化カドミウムかセレン化カドミウムあるいは
それらの混合物をおいて高温度で薄膜に到達する塩化カ
ドミウムの蒸気圧を減少させることを特徴とする特許請
求の範囲第４項記載の光導電性薄膜の製造方法。(5) Set the gap between the deposited thin film and the cadmium chloride evaporation source to 5 to 10+ a and the length to 10 to 20 mm, and place cadmium sulfide, cadmium selenide, or a mixture thereof in this part and heat it at high temperature. 5. A method for producing a photoconductive thin film according to claim 4, characterized in that the vapor pressure of cadmium chloride reaching the thin film is reduced.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58250819A JPS60142579A (en) | 1983-12-28 | 1983-12-28 | Manufacture of light conducting film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58250819A JPS60142579A (en) | 1983-12-28 | 1983-12-28 | Manufacture of light conducting film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60142579A true JPS60142579A (en) | 1985-07-27 |
Family
ID=17213504
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58250819A Pending JPS60142579A (en) | 1983-12-28 | 1983-12-28 | Manufacture of light conducting film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60142579A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0198271A (en) * | 1987-10-12 | 1989-04-17 | Matsushita Electric Ind Co Ltd | Manufacture of photosensor |
| JPH0198267A (en) * | 1987-10-12 | 1989-04-17 | Matsushita Electric Ind Co Ltd | Manufacture of photosensor |
-
1983
- 1983-12-28 JP JP58250819A patent/JPS60142579A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0198271A (en) * | 1987-10-12 | 1989-04-17 | Matsushita Electric Ind Co Ltd | Manufacture of photosensor |
| JPH0198267A (en) * | 1987-10-12 | 1989-04-17 | Matsushita Electric Ind Co Ltd | Manufacture of photosensor |
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