JPS60138735A - Heat treatment of magnetic recording medium - Google Patents
Heat treatment of magnetic recording mediumInfo
- Publication number
- JPS60138735A JPS60138735A JP24895483A JP24895483A JPS60138735A JP S60138735 A JPS60138735 A JP S60138735A JP 24895483 A JP24895483 A JP 24895483A JP 24895483 A JP24895483 A JP 24895483A JP S60138735 A JPS60138735 A JP S60138735A
- Authority
- JP
- Japan
- Prior art keywords
- film
- contg
- magnetic
- heat treatment
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Magnetic Record Carriers (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Thin Magnetic Films (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、co−Ni薄脱磁気記録媒体の改良に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to improvements in co-Ni thin demagnetized recording media.
Co−Ni合金をArと窒素混合雰囲気中でスパッタす
ることにより、基板上に薄膜媒体を形成し、これを真空
中等で熱処理することにより、磁気特性の優れた薄膜磁
気記録媒体をうろことは、特開昭57−72307.お
よびJ、 A、 P、53 、(5)May 1982
. J、 A、 P、53 (10) Oct、 19
82゜J P N 、J 、 A ppl、phys、
vol、211982N o、11等により公知である
。By sputtering a Co-Ni alloy in an Ar and nitrogen mixed atmosphere, a thin film medium is formed on a substrate, and by heat-treating this in a vacuum or the like, a thin film magnetic recording medium with excellent magnetic properties can be produced. Japanese Patent Publication No. 57-72307. and J, A, P, 53, (5) May 1982
.. J, A, P, 53 (10) Oct, 19
82゜J P N , J , A ppl, phys,
Vol. 211982 No. 11, etc.
特に熱処理は上記特許公報では、250°C以上700
℃で行うとされている。また、上記論文においては、主
に290℃で行っている。In particular, in the above patent publication, heat treatment is described at temperatures of 250°C or higher and 700°C.
It is said to be carried out at ℃. Furthermore, in the above paper, the temperature is mainly 290°C.
さて、これらの論文でも指摘されているように、熱処理
後に膜にhollow channelsと呼ばれる幅
約300A程度の亀裂が生じている。Now, as pointed out in these papers, cracks with a width of about 300 A called "hollow channels" are formed in the film after heat treatment.
一方、磁気記録密度の向上による線記録密度の上昇から
媒体の膜厚のみならず高S / N比も要求され、良質
薄膜媒体が要求されており上記hollowchann
elsのない薄膜が必要とされている。On the other hand, as the linear recording density increases due to the improvement in the magnetic recording density, not only the film thickness of the medium but also a high S/N ratio is required, and a high quality thin film medium is required.
There is a need for thin films that are free of els.
本発明は、熱処理により上記亀裂の発生しない熱処理方
法を提供することを目的とする。An object of the present invention is to provide a heat treatment method in which the above-mentioned cracks do not occur during heat treatment.
この目的を解決するため、特に膜中の窒素および酸素の
脱ガス開始時に着目し、室温から所定熱処理温度に至る
加熱速度を種々検討した。In order to solve this objective, we focused on the start of degassing of nitrogen and oxygen in the film, and investigated various heating rates from room temperature to a predetermined heat treatment temperature.
その結果、所定熱処理温度環境に直接7mm x 81
111+1X 2ml厚さの試料を挿入し、急速加熱し
た場合には亀裂が発生ずること、一方室温から20℃/
分以上の平均加熱速度で400°Cないし500℃の熱
処理1温度まで昇温した場合、上記亀裂の発生は見られ
ないことが一1明した。18℃/′分以下での加熱を行
えば、より望ましく、一方り7℃/分を越える加熱速度
の場合には亀裂の発生が見られた。また亀裂を防止する
ことにより、角形比および残留磁束密度の向上も認めら
れた。As a result, 7 mm x 81
111+1X If a 2ml thick sample is inserted and heated rapidly, cracks will occur;
It has been found that when the temperature is raised to the heat treatment 1 temperature of 400° C. to 500° C. at an average heating rate of 1 minute or more, the above-mentioned cracks are not generated. Heating at a rate of 18° C./min or less is more desirable, while cracking was observed at a heating rate of more than 7° C./min. Furthermore, by preventing cracks, improvements in squareness ratio and residual magnetic flux density were also observed.
以下実施例について具体的に説明する。Examples will be explained in detail below.
実施例
平板マグネ1〜ロンスパツタにより、薄膜媒体を陽極ア
ルミ酸化アルミ基板、AI 20aセラミック基板、ス
テンレス基板、ガラス基板上にN2又は02又は空気含
有Arガス雰囲気中で次の条件でスパッタした。EXAMPLE A thin film medium was sputtered onto an anode aluminum aluminum oxide substrate, an AI 20a ceramic substrate, a stainless steel substrate, and a glass substrate using a flat plate magnet 1-ron sputter in an N2 or 02 or air-containing Ar gas atmosphere under the following conditions.
初期排気 1〜2×10TOrr
全雰囲気圧 16 mTorr
投入電力 11(W
ターグツ1〜組成 Co −30原子%N1ターゲット
径 12hun
極 間 隔 120mm
膜 厚 1000A
基板寸法 7x 8x 2mm厚
上記条件で作成したスパッタ膜はX線回折の結果、いず
れもアモルファス材特有のハローパターン回折スペクト
ルを示し、熱処理前にはほとんど磁気は現われなかった
。Initial exhaust 1 to 2 x 10 TOrr Total atmospheric pressure 16 mTorr Input power 11 (W) Composition Co -30 atomic% N1 Target diameter 12 h Pole spacing 120 mm Film thickness 1000 A Substrate dimensions 7 x 8 x 2 mm thick Sputtered film created under the above conditions As a result of X-ray diffraction, both exhibited halo pattern diffraction spectra characteristic of amorphous materials, and almost no magnetism appeared before heat treatment.
熱処理は真空、空気炉によった。いずれも試料を400
℃ないし500℃の所定熱処理温度に1時間保持した。Heat treatment was performed using a vacuum or air furnace. In each case, 400 samples were used.
The sample was maintained at a predetermined heat treatment temperature of 500°C to 500°C for 1 hour.
その後約1時間で30℃近傍の湿度まで冷却し試料を磁
気特性測定に洪した。磁気特性は試料振動型磁力計を用
いて膜に水平方向の特性を測定した。Thereafter, the sample was cooled to a humidity of around 30° C. in about 1 hour, and the sample was subjected to magnetic property measurements. The magnetic properties were measured in the horizontal direction of the film using a sample vibrating magnetometer.
亀裂の有無はi o 、 ooo倍のSE、M観察によ
った。The presence or absence of cracks was determined by SE and M observation at io and ooo times.
室温から400℃ないし500℃までの熱処理温度まで
の平均加熱速度約り0℃/分以上の場合には公知例J
、 AFlill、1)hys、vol、53 No、
5 May 1982の論文P 、3736にみられる
様な亀裂(いわゆるbollowchannels)が
認められたが、20℃/分以下の平均加熱速度の場合に
は亀裂はなく、いずれも梨地状の紋様のみ観察された。If the average heating rate from room temperature to a heat treatment temperature of 400°C to 500°C is approximately 0°C/min or more, then the known example J is used.
, AFrill, 1) hys, vol, 53 No.
5 May 1982 paper P, 3736, cracks (so-called bowlchannels) were observed, but when the average heating rate was 20°C/min or less, no cracks were observed, and only a satin-like pattern was observed in both cases. Ta.
これらの状況は基板の相違によっても大きな差異はなか
った。There were no major differences in these situations depending on the substrate.
第1表にこれらの結果を熱処理後の磁気特性と共に示す
。Table 1 shows these results together with the magnetic properties after heat treatment.
/
亀裂のない場合には、亀裂が発生した場合に比較し残留
磁束密度3r、角形比S (Br /Bうに)、但し8
3には3kOe磁界における磁束密度を示す。/ When there are no cracks, the residual magnetic flux density is 3r and the squareness ratio S (Br /B sea urchin), but 8
3 shows the magnetic flux density in a 3 kOe magnetic field.
室温から熱処理温度までの急加熱をさけることによる亀
裂防止効果は明らかであり、磁気特性の点でも記録薄膜
媒体どして、より優れたものである。The effect of preventing cracks by avoiding rapid heating from room temperature to the heat treatment temperature is obvious, and it is also superior to recording thin film media in terms of magnetic properties.
なお、熱処理後の膜はいずれも結晶化しり、c、p。Note that the films after heat treatment are all crystallized, c and p.
構造を有し、そのC軸が面と水平方向に配向しているこ
とがX線回折により確められた。It was confirmed by X-ray diffraction that it has a structure with its C-axis oriented horizontally to the plane.
本発明により、面内方向に磁化容易軸を有するCo−N
i合金スパッタ膜を亀裂なく、かつ高密度磁気記録媒体
として、より優れた磁気特性をも有するように出来た。According to the present invention, Co-N having an easy axis of magnetization in the in-plane direction
The i-alloy sputtered film can be made without cracks and has better magnetic properties as a high-density magnetic recording medium.
Claims (1)
Arガスまたは空気を適量含有するArガス雰囲気中で
、Ni含有量35原子%以下のC0−Ni合金ターゲッ
トをスパッタし、非磁性基板上に窒素又は酸素および窒
素と酸素を12ないし17原子%含有するCo−Ni合
金薄膜を形成し、これを加熱処理し、磁気記録媒体とし
て適した磁気特性をうるに際し、室温から所定の熱処理
温度(400℃以上500℃)までの間を20℃/′分
以下の平均昇温速度とすることを特徴とする磁気記録媒
体の熱処理方法。A C0-Ni alloy target with a Ni content of 35 at% or less is sputtered in an Ar gas atmosphere containing an appropriate amount of nitrogen, an Ar gas containing an appropriate amount of oxygen, or an Ar gas atmosphere containing an appropriate amount of air, and nitrogen is deposited on a nonmagnetic substrate. Alternatively, when forming a Co-Ni alloy thin film containing 12 to 17 at% of oxygen, nitrogen, and oxygen, and heat-treating the film to obtain magnetic properties suitable for a magnetic recording medium, the film may be heated at a predetermined heat treatment temperature (400°C) from room temperature. 500° C.) at an average temperature increase rate of 20° C./min or less.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24895483A JPS60138735A (en) | 1983-12-27 | 1983-12-27 | Heat treatment of magnetic recording medium |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24895483A JPS60138735A (en) | 1983-12-27 | 1983-12-27 | Heat treatment of magnetic recording medium |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS60138735A true JPS60138735A (en) | 1985-07-23 |
Family
ID=17185872
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP24895483A Pending JPS60138735A (en) | 1983-12-27 | 1983-12-27 | Heat treatment of magnetic recording medium |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60138735A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09190622A (en) * | 1997-01-14 | 1997-07-22 | Toshiba Corp | Magnetic recording medium |
-
1983
- 1983-12-27 JP JP24895483A patent/JPS60138735A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09190622A (en) * | 1997-01-14 | 1997-07-22 | Toshiba Corp | Magnetic recording medium |
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