JPS60137023A - Forming method of pattern and device used for executing said method - Google Patents

Abstract

PURPOSE:To form a pattern with a submicron order gap easily by coating a substrate, to which the mask pattern is shaped, with a film and etching the substrate and the film by accelerated particles. CONSTITUTION:A pattern material layer A is formed on a substrate 1 in thickness tA, and a mask pattern B in thickness tB is shaped on the layer A by a photo-resist material through a photolithography technique. A film C is formed on the exposed surfaces of the pattern material layer A and the mask pattern B in thickess TC so that the undulating shape of the mask pattern B is maintained approximately. Consequently, the mask pattern B is thickened, and gap width G2 is made narrower than initial gap width G1. The film C and the pattern material layer A are etched by using accelerated particles. The gap width of the mask pattern B is further narrowed because one part C' of a material for the film C adheres on the side surface of the pattern B again at that time.

Description

DETAILED DESCRIPTION OF THE INVENTION Technical Field of the Invention The present invention relates to microfabrication techniques applied to the fabrication of microelectronic devices such as magnetic bubble memory devices, semiconductor devices, surface acoustic wave devices, Josephson devices, etc. Regarding the technology, especially the sandwiching gap (submicron gap) from 1 μm, especially 0.5 μm.
The present invention relates to the following method of forming a pattern with a fine gap and an apparatus used to carry out the method.

Background of the Technology In the above-mentioned devices, no-turns made of conductors, magnetic materials, etc. are formed on the substrate, and in order to improve the characteristics of the device and make it smaller or more dense, it is necessary to miniaturize the pattern, especially Reducing the gap between patterns has become an important issue. For example, in so-called 4-malloyable memory devices that use 4-malloy/g turns to transfer magnetic bubbles, there is a gap between permalloy patterns (
r) Gap width is one of the factors that determines bubble transfer characteristics
It is well known that it is advantageous to make the gap as narrow as possible in order to improve performance characteristics and storage density.

Conventionally, the formation of fine patterns such as non-malloy transfer i+ turns has been performed using phosphorography techniques (hereinafter, these are collectively referred to as [
photolithography technology) is used.

Although photolithography technology has made remarkable progress in recent years, its practical resolution is still limited to 1 μm, and therefore, as will be explained later, it is extremely difficult to form submicron gaps using the conventional /4' turn forming method. C, especially 0.
It was virtually impossible to form a gap of 5 μm or less.

Because of (7), in Tsukuma loupable memory, 1
At present, it is necessary to pursue improvements in transfer characteristics and storage density by devising the shape of the gear lag pattern. By the way, in the early days, 'l'-■/4 turns, chevron patterns, etc. were used, but now so-called gap-tolerant patterns such as half-disk/mother turns and asymmetric chevron patterns are used.
ttern) has been used to realize a multiple memory with an iR bubble diameter μm and a bit period of 8 μm and a storage density of 1 h. Furthermore, in recent years, wide gap patterns (w
ide-gap pattern), bubble diameter 1 μm, bit period 4 μm, storage density 4' Mb
We are getting closer to realizing IT's bubble memory. However, in order to further improve operating characteristics and storage density, it is required that the gap of the Nosomalloy pattern be smaller than 1 μm, particularly as small as 0.5 μm.

Under these circumstances, there is a strong demand for a method that can easily form patterns having submicron gaps.

Conventional technology and problems /J? using conventional photolithography technology? The turn forming method is to first form a layer of pattern-forming material on the substrate surface, then apply photolithography technology on this mother turn material layer to form a mask pattern using a photoresist material, and then/ The material layer is etched to form nine turns. In this method, the width of the turn gap is determined by the limits of the mask turn formation technology and the photolithography technology, and the resolution is 1.
In μm, the limit for the turn gap width is basically 1 μm.On the other hand, as will be described later with reference to the drawings, several methods have been considered in the past to form submicron gaps using photolithography technology with a resolution of 1 μm. It is being One method is to shorten the turn-by-turn exposure time of the photoresist material in the mask pattern forming process. That is, if an I-type photoresist material is used as the photoresist material and the fogging time is made shorter than the standard exposure time, a mask turn with a submicron gap can be formed even at a resolution of 1 μm, and therefore a submicron gap can be formed. Formable. Another method is to use etching techniques that utilize accelerated particles, such as ion milling. In etching using accelerated particles, there is a phenomenon in which part of the material removed from the mask/gutter (turn formation) reappears on the mask/gutter or pattern formation layer, which thickens the pattern and increases the pattern gap accordingly. It has the effect of becoming narrower. Therefore, 1 μn
Submicron gaps/F-turns can be formed based on a one-gap mask pattern. However, the former method of shortening the exposure time has its own limitations in that it is easy to cause defects in pattern cutting of masks and turns due to variations in the amount of light and variations in the dimensions of the exposed patterns. In addition, in the conventional method, even if the latter etching technique using accelerated particles was used, an effective gap-filling effect (gap pinching effect) could not be obtained. In the end, in the conventional method, even with the thickening effect of both the shortening of exposure time and the etching technology using accelerated particles, the minimum gap width that can be formed at one resolution is 0.5 μm, which is extremely high. process control is required, making it unsuitable for practical use.

OBJECTS OF THE INVENTION In view of the above-mentioned prior art, an object of the present invention is to provide a pattern forming method that can very easily form patterns having submicron gaps that exceed the limits of photolithography technology. Another object of the present invention is to provide an apparatus for use in carrying out the above-described turn forming method.

DESCRIPTION OF THE INVENTION The present invention generally aims to achieve the above object by effectively utilizing the pattern thickening effect in the etching technique using accelerated particles described above.

That is, in the pattern forming method according to the present invention, a layer of a material forming four turns is first formed on the surface of a substrate, and a mask/glue is applied on the pattern material and layer to cover a portion approximately corresponding to the four turns to be formed. After forming the turns, a coating is formed over the pattern material layer and the exposed surface of the mask/turns so that the undulations of the mask pattern are substantially maintained, and then an etching technique utilizing accelerated particles is used to remove the features. etching the film and pattern material layer to form the desired pattern from the pattern material layer;
It removes turns.

According to this method, by forming the film, the gaps between masks and turns can be made narrower than the limits of photolithography technology, and secondly, the pattern thickening effect in etching using accelerated particles can be reduced. By combining these two effects, it is possible to form a pattern with a much narrower gap than the limit of IJ lithography technology.

In the above method, the coating is preferably formed using a vapor deposition or suction technique. In this case, the film formation process and the subsequent etching process using accelerated particles are performed using the same vacuum device without breaking the vacuum state in order to prevent contamination due to adhesion of fine particles to the surface of the film layer on the substrate. It is advantageous to carry out continuously.

Therefore, the present invention provides a vacuum chamber, a substrate holding mechanism for holding a substrate to be processed in the vacuum chamber, a film forming means for forming a film layer on the substrate, and a film layer on the substrate using accelerated particles. The purpose of the present invention is to provide a vacuum device comprising an etching means for etching using the etching method.

Embodiments of the Invention Examples of the present invention will be described below with reference to the drawings and in comparison with conventional examples.

First, a conventional method for forming grooves will be explained.

1A and 1B of the drawings show the basic steps of the conventional method. First, as shown in FIG. 1A, a pattern material layer 2 is formed on a substrate 1 by vapor deposition or the like. A mask pattern 3 having a thickness t2 is formed on the layer 2 from a photoresist material by photolithography. The symbol g1 indicates the gap width (lower base width) of the mask pattern 3. After that? After etching the turn material layer 2 and removing the mask pattern 3, the substrate 1 is removed as shown in FIG. 1B.
A pattern 2P is formed thereon. The symbol g2 indicates the gap width (lower base width) of the /e-on 2P.

For example, permalloy transfer of permalloy bubble memory device using the above method? To form the turns, the i9 turn material layer 2 is made of e-malloy and its thickness t□ is 3
Set it to 0001. Also, Mask/Gturf 3 is, for example, “A
Months such as Z 1350 J J (Shipley)? It is formed using a di-type photoresist material, and its thickness is t2.
is 6750X. In this case, assuming that the exposure time to the photoresist material is a standard time, the gap width gt of the mask pattern 3 is at most 1 μm. If, for example, a chemical etching technique is used for etching the Nono-Malloy layer 2, the gap width g of Nono-Malloy or the turn 2P
2 also has a limit of 1 μm, making it impossible to form a submicron gap.

On the other hand, as described above, if the pattern exposure time of the photoresist material is made shorter than the standard time, the mask pattern gap width g1 can be reduced to about 1 μm. Furthermore, by using an etching technique that utilizes accelerated particles, such as ion milling technique, the pattern width of the permaloid pattern 2P can be made wider than that of the /J pattern of the mask pattern 3.
Mask the turn gap width gz or turn gap width g
It can be narrower than l. Figure 2 shows the mask pattern versus exposure time T when a mask pattern 3 is formed by exposing four turns with a pattern width and a gap width of 1 μm, and a permalloic pattern 2P is formed by ion milling. It is a figure showing the relationship between turn width (lower base width) wl and permalloy pattern width (lower base width) $2. From this figure, it can be seen that when the exposure time T is short, the mask pattern width w1 becomes thicker than 1 μm (that is, the mask pattern gap 11 to πgl becomes narrower than 1 μm), and furthermore, the mask pattern width w1 becomes narrower than 1 μm. It can be seen that the turn width w2 becomes thicker than the mask pattern width w1 due to the pattern thickening effect caused by ion milling. For example, exposure time T=0.20se
In the case of c, the mask pattern width Wl and the Noguichi Malloy turn width w2 are 1.46 μm and 1.50 Bm, respectively.
(!: fx ri, iN station, etc.) The mask pattern gap 11fi'ig2 is 0.5 μm. However, as described above, there is a limit to the shortening of the exposure time.

Furthermore, the thickening effect caused by the etching technique using accelerated particles can be increased by increasing the mask pattern thickness t2, but on the other hand, if t2 is too large, the permalloy pattern will become thicker due to the permalloy reattached to the mask pattern. There is a problem that a wall is formed at the edge of the 2P, causing a defective mother turn. In the end, in the conventional method, even if the pattern thickening effect (gap narrowing effect) due to both the shortening of exposure time and the etching technology using accelerated particles is combined, the minimum 2 turns that can be formed using photolithography technology with a resolution of 1 μm can be reduced. The gap width is approximately 0.5 μm.

Next, the pattern forming method of the present invention will be explained. 3A to 3D of the drawings show a basic embodiment of the method of the present invention, the steps of which are as follows.

(1) First, as shown in FIG. 3A, a 74-turn material LA is formed on the substrate 1 to a thickness tA, and a mask pattern B having a thickness tB is formed thereon using a photoresist material by photolithography. The code Gl is mask turn B
Indicates the initial gap width (bottom width) of

(2) Next, as shown in FIG. 3B, a coating C is formed on the exposed surfaces of the pattern material layer A and the mask pattern B to a thickness Tc so that the undulating shape of the mask pattern B is substantially maintained. As a result, the mask and turn B become thicker, and the gap width (lower bottom width) G2 becomes smaller than the initial gap width G.

(3) After etching, as shown in Figure 3C, an etching technique using accelerated particles, such as Ne * Ar + Xe
MX was subjected to ion milling using an inert gas such as
Etch c. At this time, a part of the material C' of the etched film C re-attaches to the side surface of the mask cut turn B, so that the base of the mask cut turn B is covered with the re-deposited layer C.
The gap width (bottom width) Ga becomes narrower than the gap width G2 after film formation.

(4) Subsequently, the cross-turn material layer A is etched by ion milling and the mask/mother turn Bt is removed, thereby forming the cross-turn AP as shown in FIG. 3D.・I-turn AP gap width (bottom width) G 41
rJ, , due to the pattern thickening effect due to ion milling, the mask-gutter gap width G after film etching
3. It gets narrower.

When a permalloy transfer pattern of a permalloy bubble memory device is formed by the method of the present invention, the pattern material layer A is a single-malloy layer, and its thickness TA is 3000X. In addition, as the photoresist material 4 for forming the mask setan B, the above-mentioned (7) I''AZ1350 was used.
Use Jj'i. However, the thickness TB of mask pattern B
It is desirable to make it thicker than in the conventional method;
X is optimal. This is the same as the conventional method, TB==67
This is because with '50X, a sufficient pattern thickening effect cannot be obtained by etching.

The material for the coating C may be selected mainly taking into consideration the adhesion to the mask pattern B and the etching rate.
u*NiFe (permalloy), Au.

Ti r 0r203r 5in2+ Cr + St
Various materials can be used. However, if a material different from the mother turn material layer A is used, the etching rate will be different, making it difficult to control the etching process, and if it remains on the pattern after formation, there is a risk of corrosion due to local battery action. Therefore, it is desirable to use the same material as the material layer A. For example, pattern material layer A
is an i4-malloy layer, C as the material of the coating C
U*NiFe and Au rTi are effective, but permalloy (NiFe) is particularly desirable. ``Coating C can be formed by vapor deposition or sputtering. In this case, for example, by using a planetary substrate holding jig, the coating material can be held at an angle of 00 to 45 degrees with respect to the normal to the substrate.
The thickness of the coating C on the side surface of the mask pattern B is made to be as uniform and thick as possible by applying the coating from the direction shown in FIG. In addition, when forming the coating C by vapor deposition, it is desirable to maintain the temperature of the substrate 1 at a low temperature (for example, 150° C. or lower) during vapor deposition in order to prevent deterioration and deformation of the mask pattern B. .

The above gap width G2 mG3 #G4 is p of the coating C
, 7 determined by the thickness Tc. FIGS. 4A to 4C show the amount of thickening of the mask pattern B and the permalloy pattern AP relative to the film thickness Tc of the permalloy film C when the initial gap width G1 of the mask pattern B is 1 μm;
In other words, it indicates the amount by which the gap width is narrowed. Fourth
Figure A is a mask. Turn B (7) if! The amount of narrowing (Gl-Gz) of the gap width G2 after film formation with respect to the Δgap width G is shown. Further, FIG. 4B shows a view (G2 G4) between the permalloy pattern gap width G4 and the mask pattern gap width G2 after film formation. However, in FIG. 4B, the dotted line go indicates the gap width narrowing amount when the permalloy film C is not formed (T, = 0), and this is the same as the mask i9 in the conventional method shown in FIGS. 1A and 1B. The amount of narrowing of the pattern gap width g2 when the turn cap f g1 = 1 μm (g1'-
gz). The difference between CG2 G4) and go (G2-G4 go) indicates an increase in the pattern thickening effect (gap pinching effect) during etching due to the formation of the film C. In Fig. 4C, The gap width narrowing amount (G1-G
x) and the gap width narrowing amount (G2 G
4'), the sum of the sum of the width and the turn reference gap width Gl? - The total narrowing of the Malloy pattern gap width G4 'l+%7 (Gl-G4) and the total sandwiched part of this gear tooth width: (GlG4) - The gap width narrowing that can be done without forming the Malloy coating C. amount go
The difference between G1 and G4 indicates the amount of gap narrowing (G1-G4 go) that increases due to the formation of Cypermalloy coating C.

As is clear from Torera's diagram, the perm convex is covered with 11 ki C.
In the case of the conventional method that does not form Mg, the gap width is narrowed.
o is 0.29 μm, therefore, the permalloy/mother turn gap width g2 is 0.71 μm for the mask/4′ turn width g 1 =1 μm. On the other hand, in the method of the present invention, for example, when the film thickness Tc of the Nokumaloy film C is 2400X (0, 2, 4 μm), first the amount of mask-gutter gap width sandwiching (Gl') due to the formation of the film C is
G2) is 0.20 μm, by etching.
The Malloy pattern gap width narrowing amount (G2-G4) is 0.5511 m, and the total gear width narrowing amount (al G4) is 0.75 μm. That is, while the mask pattern initial gap width G1 is 1 μm, the Malloy gap width G4 is 0.25 μm. In this case, the increase in gap width due to the formation of Noguichi Malloy coating C is gz-G4=0.71-0.25=0.46
It is μm.

As described above, according to the present invention, by forming the film C, the initial gap width of the four turns of the mask can be narrowed prior to etching, and furthermore, the etching process has a large gap narrowing effect (the glossy turn thicker). As a result, a sandwiching pattern gap can be formed which is significantly larger than the initial gap width on the mask. In other words, by using photolithography technology with a practical limit of 1 μm, we can create submicron gaps that exceed that limit, especially 0.
．． It is possible to stably and extremely easily form four turns having a fine gap of 5 μm or less. Therefore, by applying the pattern forming method of the present invention to the various types of devices described above, it is possible to significantly improve the characteristics of the devices, and to make them smaller or more dense.

An example of manufacturing a permalloyable memory device to which the above-described method of the present invention is applied will be described with reference to FIGS. 5A to 55.

(1) As shown in Figure 5A, non-magnetic garnet (
A magnetic garnet thin film 10, which is a bubble movement layer, is formed on a substrate (not shown) of gadolinium gallium garnet by epitaxial growth, and SiO□
All 11 layers are formed to a thickness of 500X by tuttering,
Furthermore, a Ta-Mo alloy layer 12 for forming a conductor pattern
and AIIJ Emperor 13 total 13 200X and 3 respectively
Form to a thickness of 800X.

(2) Next, as shown in FIG. 5B, a mask pattern corresponding to the conductor pattern is applied to the Au8j13-hi.
4 is formed with a thickness of 5000× from a digital resist material (such as AZ1350J) by photolithography.

(3) As shown in FIG. 5C, the Au layer 13 and Ta-Mo alloy layer 12 are etched by ion milling to form conductors and turns c p (12, 13), and the mask pattern 14 is removed. do.

(4) Next, as shown in FIG. 5D, heat-resistant resin (PL)
O8) Apply 15 to the entire surface and conductor pattern CP
Flatten the level difference.

(5) Next, as shown in FIG. 5E, a permalloy (NiFe) layer 16 for forming a Nokumalloy transfer pattern.
(corresponding to the pattern material layer A shown in FIG. 3A) and a C r 20 s layer 17 which is an antireflection film during pattern exposure are formed by vapor deposition to a thickness of 3000× and 400×, respectively.

(6) Next, as shown in FIG. 5F, on the Cr2O3 layer 17...
8 (corresponding to mask pattern B shown in FIG. 3A) using photolithography technology, for example, a positive resist (Az13
5OJ etc.) to a thickness of 10,000X. The minimum gap width of the mask pattern 18 is 1 μm.

(7) Furthermore, as shown in FIG. 5G, the mask pattern 18
Cypermalloy (NiFe) coating 19 (NiFe) is deposited from above.
A coating (corresponding to coating C shown in FIG. 3B) was formed to a thickness of 2000 mm. In this case, the substrate is kept at a temperature of 150° C. or lower to prevent deterioration and deformation of the mask pattern 18.

(8) As shown in FIG.
Then, the i9-malloy layer 16 is etched.

(9) After etching, mask patterns 18 and C
When the r2O3 layer 17 is completely removed, sea urchins and
Gu-maloy Yataan PP (corresponding to the 3rd DK -J-/♀ turn AP) is formed. The gap width is 0.3
It becomes μm.

(10 Finally, as shown in Figure 5J, heat-resistant resin (PLO8) layer 20 and S as passivation)02 layer 2
1 to a thickness of 2000X and 6000X, respectively. ◇ Bubble transfer between the nitrous bubble memory device manufactured by applying the method of the present invention and the magnetic bubble memory device manufactured by the conventional method as described above. The characteristics are shown in FIG. 6 in comparison with solid line L1 and dotted line L2, respectively. The horizontal axis in FIG. 6 indicates the driving magnetic field Hp%, and the vertical axis indicates the bias magnetic field HB. Still, par 70k for magnetic bubble memory devices
Both x feed and e turn are half disk turns,
The bit circumference IJl is the same at 8 μin, and the pattern gaps are 03 μm and 1 μm, respectively. As is clear from this figure, although the bias margins are almost the same in both cases, the minimum driving magnetic field is approximately 1500 lower in the case of the present invention.

In the above specific example, the method of the present invention was applied only to the formation of the Noya-Malloy pattern PP, but the method of the present invention was applied only to the formation of the conductor pattern c
The method of the present invention can also be applied to the formation of pO.On the other hand, the basic embodiment of the method of the present invention described above has the following disadvantages. The problem is that the formed IE turn becomes thicker around the entire periphery than the masked turn. This disadvantage is particularly problematic when applied to the formation of a permalloy transfer pattern in the above-mentioned non-hermalloyable memory device. Example 5: For example, as shown in Figure 7, the no-fdisk-no-ya-taan's kamoai, real a! In contrast to the mask pattern B shown in , the formed mask pattern AP has a shape that is thicker by d around the entire periphery, as shown by the two-dot chain line. Now gear of mask pattern B, P1 (~I
When A G 1 and leg width W are both 1 μtn>1 and pattern thickness d is 0.2 μm, ・Gu-Malloy・
Gap G4 of turn AP is G 1 2 d=0.6
Although it becomes narrower than fim, the pattern leg width wll-1:W
+2d,,=1.4μm. The narrowing of the gap width contributes to improving the bubble transfer characteristics, but on the other hand, the increase in the width of the zetern leg causes the phenomenon of curling around the pattern leg of the magnetic bubble (the bubble does not cross the gap and the pattern There is a problem in that a phenomenon in which the leg moves along the periphery of the leg occurs.

Hereinafter, another embodiment of the present invention intended to solve this problem will be explained by taking the half-disc permalloy pattern shown in FIG. 7 as an example. Hereinafter, the same reference numerals will be used for the same or similar parts as those shown in FIGS. 3A to 3D.

8A to 8A show the basic steps of a second embodiment of the method of the present invention, which are as follows.

1, a convex base mask pattern D is formed prior to forming a permalloy layer which is a pattern material layer. Any material may be used for the base mask pattern D as long as it has heat resistance, adhesion to the turn forming material, and selective etchability. For example, for permalloy, organic VllJ (photoresist material, polyimide, etc.) or At.

At''Cu alloy, 5102, etc. can be used.

The underlying mask pattern D is thicker than the base pattern material layer, and its edges define at least a portion of the edges of the pattern to be formed other than the gap intervening edges, especially the portion where pattern thickening is desired to be prevented. Form into a shape like this. In the illustrated example, the base mask pattern D is formed to have a thickness of 5000X in step S102, and its edges DE are shaped to correspond to the concave edges of the mask pattern B shown in FIG. In the figure, the reference numerals indicate the regions where the legs of the Malloy pattern are formed.

(2) Next, as shown in FIG. 8C and FIG. 8D, which is a cross-sectional view taken along the arrow 8D-8D thereof, a Noe-Malloy layer A is deposited on the exposed surface of the substrate 1 and the underlying mask pattern D. A mask pattern B is formed thereon to a thickness of 3000X, and a mask pattern B is formed thereon to a thickness of 7000X. The concave edge of mask pattern B is the edge DE of underlying mask pattern D.
is consistent with

(3) Next, as shown in Figure 8E, permalloy KMA
Then, a permalloy film C is formed on the entire surface of the mask pattern B to a thickness of 2000× by vapor deposition.

(4) Then, by etching the Cypermalloy coating C and the e-malloy layer A by ion milling, a permalloy pattern AP is formed as shown in FIG. 8F, and when the mask pattern B is removed, the state shown in FIG. 8G is obtained. Note that the base mask pattern D can be removed by an appropriate etching method that is resistant to selective etching with respect to the glossy malloy pattern AP.

According to the above method, especially as shown in FIG. 8C, in the vermaloid turn AP, the four side edges defined by the base mask pattern D are not thickened, and the edges with gaps not defined by the base mask pattern D are not thickened. Only the convex edges become thicker. Therefore, as above < G+ = W = 1 ttm
If d=0.2 μm, the gap width G4 becomes G1-2d=06 μm as shown in FIG. 8G, but the pattern leg width W2 becomes W+d=1.2 μm, and the amount of increase is halved. .

In the example shown above, only the base mask pattern defining the concave edge of the ξ-malloy turn AP is formed.
If necessary, it is possible to prevent the edges of the convex portions from becoming thicker by removing the underlying mask or turns that define the convex side gills and edges of the permalloy pattern AP.

However, in the second embodiment, the gap width G1 and leg width W of the four turns B of the mask cannot be made smaller than 1 μm due to the limitations of photolithography technology, and therefore the width of the area D1 of the base mask pattern D cannot be reduced to 3 μm or more. Therefore, it is inevitable that the leg width W2 of the Nosomalloy pattern AP is 1 μm or more. A third embodiment of the method of the present invention that takes measures against this problem is shown in FIGS. 9A to 91.
The process is as follows.

(1) First, as shown in FIG. 9A, a base mask pattern D is formed on the substrate 1. This base mask/mother turn D
is almost the same as that in the second embodiment, and the only difference is the width dimension of the half disk pattern leg forming area D20, as will be described later.

(2) Next, as shown in FIG. 9B and FIG. 9C, which is a sectional view taken along the arrow 9C-9C, similarly to the second embodiment, 7-. A 0-Malloy layer A is formed to a thickness of 3000X, and a mask/4-turn B' is formed thereon. However, this mask pattern B' differs from the mask pattern B in the second embodiment in that it has a thickness of 1000X and has a shape that partially overlaps with the base mask pattern D.

(3) Next, as shown in FIG. 9D, a permalloy coating C is formed to a thickness of 2000X.

(4) Then, perform etching by ion milling,
When nine turns B' (mask) are removed, a nosemalloy pattern AP is formed as shown in FIG. 9E.

(5) After making necessary adjustments, base mask pattern D
Remove the unnecessary portion of Permalloy JiA remaining on top. There are two ways to do this: One method is to first remove only the base mask pattern D by selective etching as shown in Figure 9F, and then remove the unnecessary portions of Nonomalloy 11A by cleaning, for example, as shown in Figure 9G. It is removed by mechanical means. Selective etching of the base mask pattern D can be done by O2 gas plasma etching if the material of the base mask pattern D is organic, or by using an alkaline etching solution or phosphoric acid as the main material if the material is At. This can be done using a specific etching solution, and furthermore, if the material is SiO2, CF4 gas plasma etching can be used. Another method of removal is as shown in Figure 9H.
Resin E is applied and flattened over the entire surface of the substrate in the state shown in Figure E, and the entire surface is etched by ion milling as shown in Qg 4 to form a No-e-Malloy layer A along with resin E.
This is to remove unnecessary parts of.

According to the above method, as in the second embodiment, the edges of the legs of the permalloy pattern AP defined by the base mask i+/1- D are thickened, and a submicron gap is obtained. Moreover, when forming the mask pattern B', only the gap width G is limited to 1 μm due to the limitations of photolithography technology, and the ninth
The width of area D2 of base mask pattern D shown in Figure A is 3μ.
It can be narrowed by m. Therefore, by narrowing the width of D2 in advance by the thickness of the pattern, it is possible to prevent the pattern leg width from increasing as a result. For example, set the width of D2 to G
1 + 2 (W - d) = 2.67!17?
If set as +, the pattern ear width G shown in Figure 9E
4 becomes G1 2d=0.6μm, and I? The turn leg width W3 is (2,6-0,6)/2=1 μm, and no increase occurs. Moreover, if the width of D2 is further narrowed, the pattern leg width W3 can be made smaller by 1 μn1. Furthermore, in this third embodiment as well, by adding an underlying mask pattern that defines the convex edge of the necessary lach half-disk nozzle turn, it is possible to prevent the convex edge from becoming thick.

Next, a fourth embodiment of the method of the present invention will be described. In this embodiment, for example, the gap width G4 is as shown in FIG. 10A.
= 0.3μmX pattern leg width w4-05μm N
It is possible to form a harrastic permalloy pattern AP with Ws = 0.7 pm without using the base mask pattern as described above, and the process is as follows.

(1) Figure 10B and its arrow 10C-100
As shown in FIG. 10C, which is a cross-sectional view along the substrate 1, permalloin ink A is formed to a thickness of 300.0X on the substrate 1, and a mask pattern B1 is formed thereon to a thickness of 10000X. However, the mask pattern base turn B.1 is different from the mask pattern B or B' of the above-described embodiment, and is a pattern of the pattern to be formed, the pattern pattern AP (hypothetically shown by the two-dot chain line), as shown in FIG. 10B. This is a mask pattern that covers only a portion other than the portion that approximately corresponds to the gap, in other words, it has only a gap that approximately corresponds to the gap of the turn AP. Note that the gap width G1 of the upper turn B1 of the mask is 1 μm.

(2) Next, as shown in FIG. 10D, a permalloy coating C is formed to a thickness of 300'0X.

(3) and by ion milling 1) ie-Malloy-covered M
C and 0: No e- Malloy J? When AA is etched and the mask pattern B1 is removed, a gap fG with a width G4=0.3 μm is formed in the Nosomalloy layer A, as shown in FIG. 10E and FIG. 10F, which is a cross-sectional view along the arrow 10F-10F. is formed.

(4) Next, as shown in FIG. 10G and FIG. 10H, which is a sectional view taken along the arrow 10H-10H, the gear of the
A mask pattern B2 having a thickness of 700 mm is used to cover the portion corresponding to the pattern AP and the pattern AP to be formed.
Formed with 0. The width W6 of the portion of the mask pattern B2 corresponding to the pattern ← m continuation portion Ka is W4+W5+W4=1.5
Let it be μm.

(Gin) Then, in this state, if the ie-mask pattern A is etched and the mask pattern B2 is removed, the 10th
The desired curves and turns AP shown in Figure A are formed.

According to the above method, the gap width G4 and the leg width W4 aW5 are obtained by using a mask mother turn whose minimum dimension is 14 m or more and which can be formed by photolithography technology.
In either case, fine patterns as small as 1 μm can be formed.

Next, the apparatus used to carry out the pattern forming method of the present invention will be explained. In the method of the present invention, as described above, the grooves are thickened by forming a film on the mask pattern and then etching using accelerated particles such as ion milling to realize a fine gap. However, using existing equipment, the film forming step and the etching step must be performed in separate film forming and etching equipment, respectively. In this case, one problem is contamination by fine particles on the surface of the substrate film layer. In other words, microparticles are generated in the airflow when the vacuum chamber is returned from vacuum to atmospheric pressure after film formation in a evaporation device or sputtering device, which is a film forming device, and when the vacuum chamber is evacuated from atmospheric pressure in the next etching device. adheres to the surface of the substrate film layer. This is especially fatal for forming submicron gap patterns. Yet another problem is that the use of such separate equipment increases process time.

Therefore, the present invention provides a vacuum apparatus that has both a film forming means and an etching means, and can perform the above film forming process and etching process continuously in the same apparatus without breaking the vacuum state. It is.

The structure of the first embodiment of the vacuum apparatus according to the present invention is described in the first embodiment.
It is schematically shown in Figure 1. This device incorporates a vapor deposition device into a well-known ion milling device. In the figure, reference numeral 30 indicates a vacuum chamber, and its exhaust port 31 is connected to a diffusion pump (not shown). A substrate holder 32 supported by a support stand (not shown) is provided in the vacuum chamber 30, and a substrate (not shown) on which a pattern is to be formed is placed on the surface of the substrate holder 32 in, for example, a circular shape. Multiple pieces are stored side by side. The board holder 32 is moved by the motor 33 as shown by the arrow
It can be rotated in the direction shown in FIG. 2, and can also be tilted by about 45 degrees to a dotted line position 32' as indicated by an arrow Y by a motor (not shown).

Reference numeral 34 indicates an ion milling device, which is a well-known device equipped with a cathode 35, a magnet 36, a grid 37, a neutribe 38, and the like. is introduced to generate an ion beam. On the other hand, code 4
0 indicates a vapor deposition device, 21 indicates a lead wire for power connection,
Reference numeral 42 indicates a vapor deposition source. Formation of the film layer on the substrate is performed by tilting the substrate holder 32 at about 45 degrees to the dotted line position 32'.

A dustproof cover 43 having an opening facing the substrate holder 32 is provided around the vapor deposition apparatus '40. This makes it possible to prevent deposition material from adhering to the inner wall of the vacuum chamber 30,
Therefore, there is no scattering of fine particles due to airflow during intake and exhaust.
It is possible to prevent contamination of the substrate film layer.

Now, in order to carry out the pattern forming method of the present invention using this vacuum device, the substrate after the mask pattern has been formed is set on the substrate holder 32, and the substrate holder 32 is first moved to the dotted line position (film forming position) 32'. Then, a film is formed by the vapor deposition device 40. After film formation, the substrate holder 32 is returned to the solid line position (etching position), and the ion milling device 3
Etching is performed by step 4. In this way, 1L6E
The formation process and the subsequent etching process can be performed continuously in the same apparatus without breaking the vacuum state, thus making it possible to prevent contamination of the substrate film layer by fine particles and shorten the process time.

Another embodiment of the vacuum apparatus according to the invention is shown in FIG. This embodiment differs from the first embodiment only in that a sputtering film forming means is used instead of the vapor deposition apparatus. That is, the target 5o is arranged on the front side of the substrate holder 32 so as to be rotatable in the two directions of the arrows. position) and move the ion milling device 34 position.
The target 50 is etched and a coating is formed on the substrate by sputtering. After the film is formed, the turret 50 is rotated to the dotted line position (etching position) 50', and the ion milling device 34 etches the substrate film layer. In this way, as in the first embodiment, the film forming process and the etching process can be performed continuously and in a short time without breaking the vacuum state.

In addition to the illustrated embodiment, it is also possible to consider an apparatus in which vapor deposition is performed in a front chamber (separate chamber) by applying a load-drawing method.

Effects of the Invention As described above, according to the present invention, it is possible to realize a method that can stably and easily form a pattern having a submicron gap, particularly a fine gap of 0.5 μm or less, using conventional photolithography with a resolution of 1 μm. By applying such a method, it is possible to improve the characteristics of microelectronic devices such as magnetic bubble memory devices, and to make them smaller or more dense.

Furthermore, if the vacuum apparatus according to the present invention is used, the film forming step and the etching step can be performed at the same time in the above pattern forming method.
It can be carried out continuously without breaking the vacuum state of the apparatus, and therefore high-quality devices without contamination by fine particles can be manufactured in a short time, and furthermore, it is possible to significantly reduce costs.

[Brief explanation of the drawing]

Figures 1A and 1B are diagrams showing the basic steps of an example of a conventional pattern forming method, and Figure 2 is a graph showing the shortening of pattern exposure time in the conventional method and the pattern thickening effect due to etching using accelerated particles. , FIGS. 3A to 3D are diagrams showing the basic steps of the first embodiment of the pattern forming method according to the present invention, and FIGS. 4A to 4C are diagrams showing the gap pinching effect (pattern thickness effect) in the method of the present invention. Figures 5A to 55 show the systems to which the method of the present invention is applied.
Figure 6 is a graph showing a comparative example of the characteristics of Kure pull memory devices manufactured by the method of the present invention and the conventional method, and Figure 7 is a graph showing an example of manufacturing a 'cy'-malloyable memory device. An illustration of the shortcomings of the first embodiment of the method,
Figures 8A to 8G are diagrams showing a second embodiment of the method of the present invention, Figures 9A to 91 are diagrams depicting a third embodiment of the method of the present invention, and Figures 1OA to 10H are diagrams showing the method of the present invention. 11 is a schematic configuration diagram of the first embodiment of the vacuum device according to the present invention, and FIG. 12 is a schematic configuration diagram of the second embodiment of the vacuum device according to the present invention. be. 1...Substrate, A...Pattern material JM, B, B
', B 1゜B2...Masktsu and turn, C...
Coating, D... Base mask/soturn, AP... Pattern, 30... Vacuum chamber, 32... Substrate holder, 3
4... Ion milling device, 40... Vapor deposition device, 4
3...Dust cover, 50...Targut. :;,'; 2 H) 1 electric T (sec) 00,] ○, 2 C1,3 Tc (pm) 0 0j 0.2 ○3 Tc (Me71, m) Tc (Pm) 2iS 5E l', 57 17, (Cr2○3) Fig. 5F 18 Fig. 5G] 9 (N-Fe) ( Fig. 5H S51 ("i'55 J Fig.") Fig. 8B 1 Fig. 8C Fig. 8E 1 B Fig. 8F Fig. 9A] Fig. 98 Fig. 10A Fig. 1 OB Fig. 1 Marriage 10C Fig. G. Section OH diagram

Claims (1)

[Claims] ■ A method for forming a turn having a minute gap on a substrate, comprising: (a) forming a circumferential layer of a material forming the pattern on the surface of the substrate; A mask pattern (+31
Form f'Jk, (c) A coating (C)'i on the exposed surface of the Yaturn U material layer (A) and the mask and turn Q3): The mini-mask pattern has an inverted shape 11. formed so as to be maintained, and to)
The coating (
C) etching the pattern material around the pattern material layer to completely form the pattern (AP) from the pattern material layer (A); and (e) removing the mask pattern (B). . 2. A glossy turn forming method according to claim 1, wherein the mask pattern (B) is formed from a photorenost material by photolithography. 3.f? The pattern forming method according to claim 1, wherein the covering (C) is made of the same material as the pattern material layer (A). 4. In the pattern forming method according to claim 1, 1)? A pattern forming method of forming [recorded JI rectangle c) by vapor deposition. 5. A pattern forming method in which the film (C) is formed by sputtering in the pattern-forming by method described in item 1. 6. 7 as set forth in claim 4° or 5i.
A pattern forming method in which the film (C1) is formed by depositing the material from an oblique direction with respect to the plane of the substrate. A lean forming method using an ion milling stand as a technique. 8. A method for forming 79 turns according to claim 7, in which an inert gas is used as the accelerated particle source. 9. Claims In the four-turn forming method described in item 1, a base mask 0) having a thickness equal to or greater than the thickness of the above-mentioned turn material layer (A) is previously formed on the surface of the substrate, and the substrate and By forming the nozoturn material layer (A) on the exposed surface of the underlying mask pattern (D), at least a portion of the edges other than the gap intervening edges of the /4' turn (AP) after formation are removed. A pattern forming method defined by the edges of the base mask pattern (D). 10. In the 9-turn forming method according to claim 9, the mask pattern (B A method for forming turns, in which an unnecessary portion of the turn material layer (A) remaining on the underlying mask pattern is removed after forming turns. 11. In the pattern forming method as set forth in claim 10, the underlying mask pattern (D) is formed of a material having selective etching properties with respect to the 79 tan material layer (A), After finishing, the underlying mask pattern (1) is removed by etching, and then the unnecessary portion of the pattern material layer (3) remaining above it is removed by mechanical means. 12. In the pattern forming method according to claim 10, after forming the pattern, a coating material is applied to the entire exposed surface of the substrate for planarization, and then the coating material is removed by etching. above the base mask pattern)
A pattern forming method for removing unnecessary portions of a pattern material layer (T). 13. A method for forming a pattern having a fine gap on a substrate, comprising: (a) forming a layer fA) of a material forming the pattern on the substrate surface; (b) fixing the pattern material layer; A first mask pattern (B1) is formed to cover a portion of the pattern to be formed other than the portion corresponding to the gap, and (c) the pattern material layer (A) and the first mask pattern (B1) are formed. A coating (C) is formed on the exposed surface so that the undulating shape of the mask pattern is substantially maintained, and (2) the coating (C) and the pattern material layer (A) are etched using an etching technique using accelerated particles.
) to form a gap in the first mask/f-turn (B1) to form a gap in the first mask/f-turn (B1);
A) Turn material 1 with the gap formed therein (A)
), a second mask/mother turn (B2) covering the gap thereof and a portion corresponding to the pattern to be formed.
(g) etching the exposed portion of the pattern material layer (Al to form the pattern material layer (AP); and (g) forming the MJ
A method for forming a groove and a turn, characterized by: removing the second mask pattern (B2). 14. A vacuum chamber, a substrate holder for holding the substrate to be processed in the vacuum chamber, a film forming means for forming a film layer on the substrate, and a method for forming the film layer on the substrate using accelerated particles. A vacuum device comprising an etching means for etching. 15. A vacuum device according to claim 14, wherein the etching means is an ion milling device. 16. The vacuum apparatus according to claim 14, wherein the film forming means is a vapor deposition apparatus. 17. In the vacuum apparatus according to claim 16, the substrate holder has two positions: a film forming position where the substrate faces diagonally to the vapor deposition device, and an etching position where the substrate faces substantially perpendicularly to the etching means. A vacuum device that can be rotated between 18. Claim 16: A self-mounted vacuum apparatus, wherein a dustproof cover having an opening facing the substrate on the substrate holder is provided around the vapor deposition apparatus. 19. The vacuum apparatus according to claim 14, wherein the film forming means is a sputtering apparatus. 2. In the vacuum device according to claim 19,
The sputtering position of the sputtering apparatus, the sputtering position interposed between the substrate holder and the etching means, the substrate etched by the etching means, [IFt 5
vacuum device movable to and from an etching position;