JPS6013308B2 - semiconductor equipment - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention comprises a flat container consisting of a metal bottom plate and a metal lid, the bottom plate and the lid are mechanically connected to each other with an insulating material, and a semiconductor device is placed inside the container. The present invention relates to a semiconductor device which is sealed and pressed against the bottom plate and the lid to make thermal and electrical contact therewith.

Known semiconductor devices of this type have been encapsulated with a ring of visible insulating material or molded with a plastic insulating material.

In some cases, to avoid the inflow of liquid insulating material,
Combinations of flexible insulating material rings and insulators formed from plastic insulating materials have also been used. In this case, if only a pressurized contact is made between the semiconductor component and the bottom plate or the component and the lid, strict requirements are imposed on the sealing. This is because the resin tends to wet the bottom plate, the lid, and the contact surfaces between the semiconductor elements due to capillary action.Furthermore, a mold for casting or transfer molding is required for molding. This type is expensive and increases the price of the semiconductor device.
The object of the invention is to improve a semiconductor device of the type mentioned at the outset so that it can be sealed easily without the use of complex molds.

In the present invention, the lid is formed as a flange-like body having a bottom part and a wall part, one electrode of the semiconductor element is brought into contact with the bottom part, a groove is provided in the bottom plate into which the wall part of the flange-like body enters, and the semiconductor element and other parts are provided. the electrode is brought into contact with a surface of the bottom plate remote from the groove, and the groove is filled with an insulating material until the wall is immersed.

When filling the trench with an insulating material, it is desirable to fill the trench to such an extent that the surface of the semiconductor element that will be in contact with the electrode does not come into contact with the insulating material. This eliminates the need for special sealing measures to prevent wetting of the contact surfaces by the insulating material. Advantageously, the semiconductor component is retained within the lid. Along with this,
Assembly becomes significantly easier. The bottom plate can be provided with a closable exhaust port.

This opening □ is closed using a t-rivet. Through the exhaust port, air trapped during container assembly is exhausted without passing through the insulating material. The present invention will be described in detail below with reference to the illustrated embodiments.

The lid of the container for semiconductor devices is designated by the reference numeral 1 in FIG.

The lid is made of a metal with good thermal conductivity, such as copper or aluminum. The lid is shaped like a collar and has a bottom part 2 and a wall part 3. The lid i' serves to receive the semiconductor element Q, and in this case, the inner wall of the wall 3 is adapted to the outer diameter of the element 10 to prevent the semiconductor element 0 from falling out from the lid. The bottom plate of the semiconductor device container is indicated by a turtle in FIG.

The bottom plate 4 has a groove 5 in the shape of a "shaped wall 3 of the lid turtle". Both parts can be ring-shaped, for example. The surface surrounded by the groove 5 serves as a contact surface of the semiconductor element IQ. work,
It is designated by the reference numeral 6. The bottom plate 4 includes an exhaust port 7.
The groove 5 can have a step turtle 2. It is also possible to provide an exhaust port on the diamond. To assemble the device, the groove 5 is filled with a liquid curable or otherwise solidified insulating material (FIG. 3), then the lid 1 is placed on the bottom plate 4 and the wall 3 is filled with an insulating material 9. The battle layer is immersed inside.

In this case, it is advantageous to center the lid 1 and the base plate 4 in such a way that the wall 3 has an equal spacing over its entire area with the wall of the groove 5. It is desirable to make the wall 3 as thin as possible so that the amount of insulating material extruded is as small as possible.
When the wall 3 is dipped into the groove 5, only part of the insulating material is displaced, so that the liquid level rises.

At this time, the force 2 is also filled, and the creepage distance of the insulating material 9 between the lid 1 and the bottom plate turtle increases accordingly. It is desirable to select the volume of the insulating material 9 so that the material 9 does not rise to the contact surface 6 when the wall portion 3 is eroded. The air sealed inside the container when the lid turtle is immersed in the groove is extracted through the exhaust port 7. When the semiconductor element 10 comes into contact with the Niwasaka motherboard, the air sealed inside the container is removed through the exhaust port 7. It is closed, for example using rivets 8. The semiconductor component 1 can be provided with a varnish to protect the pn junctions exposed at the edges as usual.

As the insulating material 9 hardens, the semiconductor device is finally removed.

[Brief explanation of drawings]

FIG. 1 is a longitudinal sectional view of the lid of a semiconductor device according to an embodiment of the present invention and a semiconductor element housed therein, FIG. 2 is a longitudinal sectional view of the bottom plate, and FIG. 3 is a longitudinal sectional view of the completed semiconductor device. It is a front view. Wealth: Lid, 2: Bottom, 3: Wall, 4: Bottom plate 5: Groove, 9: Insulating material, 10:
...Semiconductor element. Fig. 'Fig. 2 Fi9.3

Claims (1)

[Claims] 1. A flat container consisting of a metal bottom plate and a metal lid, the bottom plate and the lid are mechanically connected to each other with an insulating material, and a semiconductor element is sealed in the container and pressed against the bottom plate and the lid. In the case where the lid is formed as a pot-like body having a bottom and a wall, one electrode of the semiconductor element is brought into contact with the bottom, and the wall of the pot-like body is in contact with the bottom. A groove is provided in the bottom plate for entry, the other electrode of the semiconductor element is brought into contact with the surface of the bottom plate surrounded by the groove, and the insulation is heated until only a portion of the wall is immersed, but not in contact with the semiconductor element. A semiconductor device characterized in that a groove is filled with a substance.