JPS60131650A - Optical memory disk and its manufacture - Google Patents

Optical memory disk and its manufacture

Info

Publication number
JPS60131650A
JPS60131650A JP58240106A JP24010683A JPS60131650A JP S60131650 A JPS60131650 A JP S60131650A JP 58240106 A JP58240106 A JP 58240106A JP 24010683 A JP24010683 A JP 24010683A JP S60131650 A JPS60131650 A JP S60131650A
Authority
JP
Japan
Prior art keywords
thin film
disk substrate
teox
disk
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58240106A
Other languages
Japanese (ja)
Other versions
JPH0465462B2 (en
Inventor
Koichi Kodera
宏一 小寺
Takeo Oota
太田 威夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP58240106A priority Critical patent/JPS60131650A/en
Publication of JPS60131650A publication Critical patent/JPS60131650A/en
Publication of JPH0465462B2 publication Critical patent/JPH0465462B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24302Metals or metalloids
    • G11B2007/24316Metals or metalloids group 16 elements (i.e. chalcogenides, Se, Te)
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B2007/24318Non-metallic elements
    • G11B2007/2432Oxygen

Abstract

PURPOSE:To enhance the recording sensitivity and stability by forming a recording thin film having MOx composition ratio of metal or semi-metal M to oxygen O on a disk substrate, and setting so that the part far from the disk substrate may contain a larger amt. of oxygen than the part near the substrate in the thicknesswise direction of the thin film. CONSTITUTION:A TeOx sintered body 5 which is a vapor deposition source is set on a hearth 4, and an electron beam 6 is concentrated on the body 5 to evaporate the vapor deposition substance by local heating. A disk substrate 8 is rotated above the sintered body 5 to vapor-deposit a TeOx thin film on the surface having a grooved track 7. When the TeOx sintered body 5 is heated by the electron beam, a film rich in Te is formed by reducing the power to decrease the vapor depositing speed. Conversely, a film rich in TeO2 is formed by increasing the vapor depositing speed. Then when the TeOx thin film is vapor- deposited, the composition rich in Te can be continuously changed to the composition rich in TeO2 from the part near the substrate toward the part far from the substrate by increasing continuously the vapor depositing speed at least at the initial stage. The disk having excellent recording sensitivity and stability can be obtained in this way.

Description

【発明の詳細な説明】 産業上の利用分野 木発萌は、レーザ光照射により記録膜に情報をビット記
録する光メモリディスクおよびその製造方法に関するも
のである。
DETAILED DESCRIPTION OF THE INVENTION The field of industrial application is an optical memory disk in which bits of information are recorded on a recording film by laser beam irradiation, and a method for manufacturing the same.

従来例の構成とその問題点 近年、実時間での記録再生が可能な光メモリディスクが
大容量高密度メモリとして大いに期待されている。これ
は例えば高速回転するディスクにレーザ光を照射してそ
の記録膜にビット記録し、同じレーザ光によって読み取
るものである。記録再生を非接触で行うため、ピックア
ップおよびディスクを傷つけないこと、お工び情報への
アク七スが高速でできる等の利点を有している。
2. Description of the Related Art Structures and Problems Therein In recent years, optical memory disks capable of recording and reproducing data in real time have been highly anticipated as large-capacity, high-density memories. In this method, for example, a laser beam is irradiated onto a disk rotating at high speed, bits are recorded on the recording film, and the bits are read out using the same laser beam. Since recording and playback is performed without contact, it has the advantages of not damaging the pickup or disc, and of allowing high-speed access to work information.

このような光メモリディスクを可能にする記録膜として
、T eo、x (、C) (x (j )薄膜がある
。このTeOxはT e O2とTeとの混合物である
。この薄膜はレーザ光照射による熱により相変態が生じ
、反射率の増大および透過率の減少によって記録ビット
を形成するものである。
As a recording film that makes such an optical memory disk possible, there is a T eo, x (, C) (x (j) thin film. This TeOx is a mixture of T e O2 and Te. This thin film A phase transformation occurs due to the heat caused by the recording bit, and recording bits are formed by increasing the reflectance and decreasing the transmittance.

TeOx’薄膜を形成する方法として、真空蒸着法が最
適ヤあり、第1図にその蒸着方法の一例を説明する。T
e蒸着源1とT e O2蒸−源2を設け、ディスク基
板3を回転させながら、それぞれの蒸着源1,2の温度
を制御して蒸着を行う。
The most suitable method for forming the TeOx' thin film is vacuum evaporation, and an example of this evaporation method will be explained in FIG. T
An e-evaporation source 1 and a T e O2 evaporation source 2 are provided, and while the disk substrate 3 is being rotated, the temperatures of the respective evaporation sources 1 and 2 are controlled to perform evaporation.

TeOx薄膜はその組成すなわちTeOxのXの値によ
って、その特性が大きく変化する。第2図はTeOx薄
膜の組成による熱転移温度の差異を測定したものである
。ガラス基板に蒸着されたこれらの膜は、加熱しながら
その透過率を測定すると、特定温度で透過率の転移が見
られる。Te成分の多い組成(TeO2成分値の小さな
組成)では熱転移温度が低いのに対し、TeO2成分の
多い組成(TeOx薄膜値の大きな組成)では熱転移温
度が高くなっている。レーザ光によって加熱昇温して膜
を相変態させて〜記録ビットを形成させる場合、この転
移温度が低いほど記録感度が高い材料であるといえる。
The properties of a TeOx thin film vary greatly depending on its composition, that is, the value of X in TeOx. FIG. 2 shows the measurement of the difference in thermal transition temperature depending on the composition of the TeOx thin film. When the transmittance of these films deposited on a glass substrate is measured while being heated, a transition in transmittance is observed at a specific temperature. A composition with a large TeO2 component (a composition with a small TeO2 component value) has a low thermal transition temperature, whereas a composition with a large TeO2 component (a composition with a large TeOx thin film value) has a high thermal transition temperature. When the film is heated and heated by laser light to undergo phase transformation to form recording bits, it can be said that the lower the transition temperature, the higher the recording sensitivity of the material.

これより、Te成分の多い組成(以下、Te ri’c
hな組成と呼ぶ)はど高感度な記録膜になり得るわけで
ある。
From this, the composition with a large amount of Te component (hereinafter, Te ri'c
(referred to as a high composition) can result in a highly sensitive recording film.

次に、これらのTeOx薄膜の安定性を調べた結果が第
3図である。ガラス基板上に蒸着した組成の異なるTe
Ox薄膜を40°C,eo%の湿度中に長時間放置して
、透過率の変化を測定した。T’erichな組成の膜
は数時間で透過率に著しい変化を示すが、T e O2
richな膜は全く変化がみられず、非常に安定である
Next, FIG. 3 shows the results of examining the stability of these TeOx thin films. Te with different compositions deposited on a glass substrate
The Ox thin film was left at 40°C and a humidity of EO% for a long time, and the change in transmittance was measured. A film with T'erich composition shows a significant change in transmittance within a few hours, but T e O2
A rich film shows no changes at all and is very stable.

以上の結果より、TeOx薄膜は、記録感度および変化
量の点では、Toτichな組成が有利であるが、安定
性の点からみるとTeO2richな組成が優れており
、どちらも一長一短がある問題点を有している。
From the above results, for TeOx thin films, a Toτich composition is advantageous in terms of recording sensitivity and variation, but a TeO2-rich composition is superior in terms of stability, and both have their advantages and disadvantages. have.

発明の目的 本発明は上記の問題点を解消するもので、記録感度が高
く、かつ安定性に優れた光メモリディスクおよびその製
造方法を提供することを目的とする0 発明の構成 本発明は金属または半金属Mと酸素0との組成比がMO
x (0(x (A 、 AはMの量を1と、した場合
の酸素0の量を化学等量比で表わした値)である記録用
の薄膜をディスク基板上に形成し、前記薄膜の厚さ方向
で、前記ディスク基板に近い部分に対し、前記ディスク
基板に遠い部分で酸素量が多くなるように設定した光メ
モリディスクであり、また、これを製造するに際し、M
Oxを主成分とする焼結体を蒸着源とし、前記ディスク
基板にMowを蒸着する少くとも初期において、蒸着速
度を連続的に上昇させるようにしたものである。
OBJECTS OF THE INVENTION The present invention solves the above-mentioned problems, and aims to provide an optical memory disk with high recording sensitivity and excellent stability, and a method for manufacturing the same. The composition ratio of metalloid M and oxygen 0 is MO
A thin film for recording is formed on a disk substrate, and the thin film is This is an optical memory disk in which the amount of oxygen is set to be greater in a portion far from the disk substrate than in a portion close to the disk substrate in the thickness direction of the disk.
A sintered body containing Ox as a main component is used as an evaporation source, and the evaporation rate is continuously increased at least in the initial stage of evaporating Mow onto the disk substrate.

実施例の説明 記録時にレーザ光の出力を上げてビット記録を行い、加
、熱変態によって生じたビット部の反射率変化を、出力
を下げたレーザ光によって再生する光ディスクの場合1
.ビーザ光の照射される側の記録膜の組成が光ディスク
の特性を左右する大きな要素となる。そこで、レーザ光
が照射される側、すなわち、ディスク基板近傍のTeO
x薄膜において、ディスク基板に近づくに従って、T、
e richな組成に連続的に変化させて、記録感度を
高めるとともにTeOx薄膜の他の領域では、T e 
O2rich表組成として、安定性を高める構成とする
Example 1 Case of an optical disc in which bit recording is performed by increasing the output of a laser beam during recording, and the change in reflectance of the bit portion caused by heating and thermal transformation is reproduced by a laser beam with a lower output.
.. The composition of the recording film on the side that is irradiated with the laser beam is a major factor that influences the characteristics of the optical disc. Therefore, the TeO on the side irradiated with laser light, that is, near the disk substrate
x In the thin film, as it approaches the disk substrate, T,
By continuously changing the composition to a rich one, the recording sensitivity is increased, and in other areas of the TeOx thin film, the T e
The O2 rich table composition is designed to enhance stability.

次に、上記のTeOx薄膜の構成を可能にする製造方法
について説明する。第4図は製造方法を示す模式構成図
である。ノ・−ス4に蒸着源であるTeOx焼結体5を
セットする。このTeOx焼結体5に電子ビーム6が集
中的に当てられ、その極部加熱によって蒸着物質が蒸発
する。TeOx焼結体6の上方に、レーザ光案内用の溝
トラツク7を有するディスク基板8が回転しており、溝
トラック7を有する面にTeOx薄膜が蒸着される。
Next, a manufacturing method that enables the above-mentioned TeOx thin film structure will be described. FIG. 4 is a schematic diagram showing the manufacturing method. A TeOx sintered body 5, which is a vapor deposition source, is set in the nozzle 4. This TeOx sintered body 5 is intensively irradiated with an electron beam 6, and the deposited material is evaporated by the extreme heating. A disk substrate 8 having groove tracks 7 for guiding laser light is rotating above the TeOx sintered body 6, and a TeOx thin film is deposited on the surface having the groove tracks 7.

TeOx焼結体5を電子ビームによって加熱する場合、
電子ビームのパワーを低くして蒸着速度を低くすると、
Te richな膜が形成される。逆にパワーを上げて
蒸着速度を高くするとT e O2richな膜が形成
される。これはTe の蒸発温度が450’Cであるの
に対し、T e O2の蒸発温度は733°Cと高くな
っているためである。したがって加熱温度を低くすると
Teのみが蒸発しゃすくTe rich な膜が形成さ
れるが、加熱温度が高くなるとT e O2も蒸発しゃ
すくなり、Te02richな膜が形成される。
When heating the TeOx sintered body 5 with an electron beam,
When the power of the electron beam is lowered and the deposition rate is lowered,
A tertiary film is formed. Conversely, if the power is increased to increase the deposition rate, a T e O2 rich film is formed. This is because the evaporation temperature of Te is 450'C, whereas the evaporation temperature of T e O2 is as high as 733°C. Therefore, when the heating temperature is lowered, only Te is evaporated and a Te rich film is formed, but when the heating temperature is raised, T e O2 is also less likely to evaporate and a Te02 rich film is formed.

そこでディスク基板にTeOx薄膜を蒸着するに際して
、少なくともその初期において、蒸着速度を連続的に上
昇させることにより、基板に近い方から遠い方に向かっ
てTe rich な組成からTe02richな組成
に連続的に変化させることができる。
Therefore, when depositing a TeOx thin film on a disk substrate, at least in the initial stage, by continuously increasing the deposition rate, the composition changes continuously from Te rich to Te02 rich from the side closer to the substrate to the side farther away from the substrate. can be done.

第6図のaの溝トラツクを形成したアクリル等のディス
ク基板9に第6図に示す蒸着速度の時間的変化でTeO
x薄膜1oを約120 nmの膜厚で形成し、さらに保
護基板11を接着層12を介して密着構造にした完成さ
せたディスクの模式図である。第5図すは、同様に薄膜
の上に樹脂コーティング12をほどこした上に、ハード
コート層13を設けたディスクである。このディスクを
1800rpmで回転させ、矢印14の方からレーザ光
を照射し5 MHzの単位周波数を記録した。その結果
、5sdBを超えるC/N比が得られ、かつ、40’C
TeO was deposited on a disk substrate 9 made of acrylic or the like on which the groove tracks shown in FIG.
FIG. 2 is a schematic diagram of a completed disk in which a thin film 1o is formed with a thickness of about 120 nm, and a protective substrate 11 is made into an adhesive structure with an adhesive layer 12 interposed therebetween. FIG. 5 shows a disk in which a hard coat layer 13 is provided on a resin coating 12 similarly applied to a thin film. This disk was rotated at 1800 rpm, and a laser beam was irradiated from the direction of arrow 14 to record a unit frequency of 5 MHz. As a result, a C/N ratio exceeding 5 sdB was obtained, and at 40'C
.

湿度9o%の雰囲気に放置しても6年以上でも有意な変
化は見られていない。
Even after being left in an atmosphere with a humidity of 90%, no significant changes were observed for more than 6 years.

なお、蒸着源としてTeOx焼結体としたが、他の成分
、たとえばGe、Sn等が添加されたTeOx焼結体に
おいても、主成分がTeOx焼結体であれば、その効果
は同様である。
Note that although a TeOx sintered body was used as the vapor deposition source, the same effect can be obtained even in a TeOx sintered body to which other components such as Ge and Sn are added, as long as the main component is the TeOx sintered body. .

連続的に酸素量を増加させるかわりに、階段状に、いわ
ば、多層膜状に酸素のより多い膜成分を形成しても、同
様に安定性のすぐれた膜を得ることができる。
Instead of continuously increasing the amount of oxygen, a film with higher stability can be obtained by forming a film component containing more oxygen in a stepwise manner, so to speak, in the form of a multilayer film.

前記実施例ではT e Oxを例にして示したが、Ge
0x(0(x(2)、5nOx(0<)C<2 )。
In the above embodiment, T e Ox was used as an example, but Ge
0x(0(x(2), 5nOx(0<)C<2).

In0x(0(x(1,5)、B10x(0(x<1.
5)等金属または手金属Mと酸素0との組成比がMOx
(0(x (A 、 AはMの量を1とした場合の酸素
0の量を化学量比で表わした値)である記録用の薄膜に
も実現可能である。
In0x(0(x(1,5), B10x(0(x<1.
5) The composition ratio of equal metal or metal M and oxygen 0 is MOx
(0(x (A, A is the value expressed as a stoichiometric ratio of the amount of oxygen 0 when the amount of M is 1)).

発明の効果 以上のように本発明によれば、ディスク基板に近い部分
に対し、遠い部分で酸素量が多くなっているので、記録
感度が良く、しかも安定性に優れた光ディスクを得るこ
とができ、しかも、製造に際しては蒸着速度をコントロ
ールするだけでよいので、容易に実施することができる
ものである。
Effects of the Invention As described above, according to the present invention, since the amount of oxygen is greater in the parts far from the disc substrate than in the parts close to the disc substrate, it is possible to obtain an optical disc with good recording sensitivity and excellent stability. Moreover, since it is only necessary to control the deposition rate during production, it can be easily carried out.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来のTeOx薄膜を形成する方法の一例を示
す斜視図、第2図は組成を変えたTeOx薄膜の熱転移
温度を測定した特性図、第3図は組成を変えたTeOx
薄膜の安定性を調べた特性図、第4図は本発明の光メモ
リディスクの製造方法を実施した装置の原理図、第6図
a、bはそれぞれ本発明の実施例における光メモリディ
スクの断正面図、第6図は第4図の装置における蒸着速
度の時間的変化の一例を示す特性図である。 8.9・・・・・・ディスク基板、5・・・・・・Te
Ox焼結体、1o・・・・・・TeOx薄膜、11・・
・・・・保護基板。 代理人の氏名 弁理士 中 尾 敏 男 ほか1名第 
2 図 ン逼1c 41 t−cノ 王1+’Wi(12!iW) 図 ρ
Figure 1 is a perspective view showing an example of a conventional method for forming a TeOx thin film, Figure 2 is a characteristic diagram showing the thermal transition temperature of TeOx thin films with different compositions, and Figure 3 is TeOx with different compositions.
A characteristic diagram showing the stability of the thin film, FIG. 4 is a principle diagram of an apparatus implementing the method for manufacturing an optical memory disk of the present invention, and FIGS. 6 a and b are cross-sectional front views of optical memory disks in embodiments of the present invention, respectively. , FIG. 6 is a characteristic diagram showing an example of temporal changes in the deposition rate in the apparatus of FIG. 4. 8.9...disc substrate, 5...Te
Ox sintered body, 1o... TeOx thin film, 11...
...Protection board. Name of agent: Patent attorney Toshio Nakao and 1 other person
2 Diagram 1c 41 t-c King 1+'Wi (12!iW) Diagram ρ

Claims (1)

【特許請求の範囲】 (1)金属または半金属Mと酸素Oとの組成比がMOx
 (0(x (A 、 AはMの量を1とした場合の酸
素Oの量を化学等量比で表わした値)である記録用の薄
膜をディスク基板1に形成し、前記薄膜の厚さ方向で、
前記ディスク基板に近い部分に対し、前記ディスク基板
に遠い部分で酸素量が多くなるように設定した光メモリ
ディスク。 (2) MOxとしてGeOx (0(x (2) 、
 S nc)x(0<x(2)、Te0x(0<x〈2
 )、’ In0x(0(x〈1.6 )、B10x(
0(x(1,5)のうちの1つを用いた特許請求の範囲
第1項記載の光メモリディスク。 (3)Aの値が前記ディスク基板に近い方から遠い方に
向って連続的に大きくなるように設定した特許請求の範
囲第1項または第2項記載の光メモリディスク。 素0の量を化学等量比で表わした値)である記録用の薄
膜をディスク基板上に形成するに際し、MOxを主成分
とする焼結体を蒸着源とし、前記ディスク基板にMOx
を蒸着する少くとも初期において、蒸着速度を連続的に
上昇させることを特徴とする光メモリディスクの製造方
法。 (6)ディスク基板1c MOx を蒸着するに際し電
子ビーム蒸着法を用いることを特徴とする特許請求の範
囲第1項記載の光メモリゾ9=りの製造方法。
[Claims] (1) The composition ratio of metal or metalloid M and oxygen O is MOx
A thin film for recording is formed on the disk substrate 1, and the thickness of the thin film is In the direction of
The optical memory disk is configured such that the amount of oxygen is greater in a portion far from the disk substrate than in a portion closer to the disk substrate. (2) GeOx (0(x (2),
S nc)x(0<x(2), Te0x(0<x<2
),' In0x(0(x〈1.6 ), B10x(
0(x(1, 5)). (3) The value of A is continuous from the side closer to the disk substrate to the side farther from the disk substrate. The optical memory disk according to claim 1 or 2, which is set to have a large size.When forming a thin film for recording on a disk substrate, , a sintered body containing MOx as a main component is used as a deposition source, and MOx is deposited on the disk substrate.
1. A method for manufacturing an optical memory disk, characterized in that at least in the initial stage of vapor deposition, the vapor deposition rate is continuously increased. (6) A method for manufacturing an optical memory sensor 9 as set forth in claim 1, characterized in that an electron beam evaporation method is used to deposit MOx on the disk substrate 1c.
JP58240106A 1983-12-20 1983-12-20 Optical memory disk and its manufacture Granted JPS60131650A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58240106A JPS60131650A (en) 1983-12-20 1983-12-20 Optical memory disk and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58240106A JPS60131650A (en) 1983-12-20 1983-12-20 Optical memory disk and its manufacture

Publications (2)

Publication Number Publication Date
JPS60131650A true JPS60131650A (en) 1985-07-13
JPH0465462B2 JPH0465462B2 (en) 1992-10-20

Family

ID=17054575

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58240106A Granted JPS60131650A (en) 1983-12-20 1983-12-20 Optical memory disk and its manufacture

Country Status (1)

Country Link
JP (1) JPS60131650A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6323235A (en) * 1986-07-16 1988-01-30 Matsushita Electric Ind Co Ltd Optical information recording carrier
JPH03120634A (en) * 1989-10-04 1991-05-22 Dowa Mining Co Ltd Optical disk and production thereof
WO2004005041A1 (en) * 2002-07-09 2004-01-15 Sony Corporation Optical recording medium
WO2004032130A1 (en) * 2002-10-01 2004-04-15 Matsushita Electric Industrial Co., Ltd. Optical information recording medium and method for manufacturing same
WO2004080724A1 (en) * 2003-03-13 2004-09-23 Sony Corporation Optical recording medium
JP2006116948A (en) * 2004-09-21 2006-05-11 Ricoh Co Ltd Write once type optical recording medium

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5046317A (en) * 1973-08-29 1975-04-25
JPS563442A (en) * 1979-06-20 1981-01-14 Toshiba Corp Optical memory disk and its manufacture
JPS57208299A (en) * 1981-06-19 1982-12-21 Fuji Photo Film Co Ltd Recording method of optical information
JPS5854338A (en) * 1981-09-28 1983-03-31 Matsushita Electric Ind Co Ltd Optical recording medium

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5046317A (en) * 1973-08-29 1975-04-25
JPS563442A (en) * 1979-06-20 1981-01-14 Toshiba Corp Optical memory disk and its manufacture
JPS57208299A (en) * 1981-06-19 1982-12-21 Fuji Photo Film Co Ltd Recording method of optical information
JPS5854338A (en) * 1981-09-28 1983-03-31 Matsushita Electric Ind Co Ltd Optical recording medium

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6323235A (en) * 1986-07-16 1988-01-30 Matsushita Electric Ind Co Ltd Optical information recording carrier
JPH03120634A (en) * 1989-10-04 1991-05-22 Dowa Mining Co Ltd Optical disk and production thereof
WO2004005041A1 (en) * 2002-07-09 2004-01-15 Sony Corporation Optical recording medium
US7390546B2 (en) 2002-07-09 2008-06-24 Sony Corporation Optical recording medium
WO2004032130A1 (en) * 2002-10-01 2004-04-15 Matsushita Electric Industrial Co., Ltd. Optical information recording medium and method for manufacturing same
CN100373481C (en) * 2002-10-01 2008-03-05 松下电器产业株式会社 Optical information recording medium and method for manufacturing same
US7485355B2 (en) 2002-10-01 2009-02-03 Panasonic Corporation Optical information recording medium and method for manufacturing the same
WO2004080724A1 (en) * 2003-03-13 2004-09-23 Sony Corporation Optical recording medium
US7464391B2 (en) 2003-03-13 2008-12-09 Sony Corporation Optical recording medium
JP2006116948A (en) * 2004-09-21 2006-05-11 Ricoh Co Ltd Write once type optical recording medium
JP4627704B2 (en) * 2004-09-21 2011-02-09 株式会社リコー Write-once optical recording medium

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