JPS60179954A - Recording medium for optical disk - Google Patents
Recording medium for optical diskInfo
- Publication number
- JPS60179954A JPS60179954A JP59033926A JP3392684A JPS60179954A JP S60179954 A JPS60179954 A JP S60179954A JP 59033926 A JP59033926 A JP 59033926A JP 3392684 A JP3392684 A JP 3392684A JP S60179954 A JPS60179954 A JP S60179954A
- Authority
- JP
- Japan
- Prior art keywords
- atoms
- alloy
- phase
- recording medium
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24308—Metals or metalloids transition metal elements of group 11 (Cu, Ag, Au)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24314—Metals or metalloids group 15 elements (e.g. Sb, Bi)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
- G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
- G11B2007/25706—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing transition metal elements (Zn, Fe, Co, Ni, Pt)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
- G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
- G11B2007/25708—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing group 13 elements (B, Al, Ga)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
- G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
- G11B2007/2571—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing group 14 elements except carbon (Si, Ge, Sn, Pb)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
- G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
- G11B2007/25713—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing nitrogen
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
- G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
- G11B2007/25715—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing oxygen
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
- G11B7/2578—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
く技術分野〉
本発明は書き換え可能な新規な省き込み・再生用光デイ
スク記録媒体に関する。DETAILED DESCRIPTION OF THE INVENTION Technical Field The present invention relates to a novel rewritable write/read optical disc recording medium.
〈従来技術〉
光ディスクは、当初情報に応じて基板上に形成した凹凸
状のビット列を記録層とし、ピット列を光学的に２ツク
アツプして情報を再生する方式のものであった。<Prior Art> Optical discs were originally of a type in which the recording layer was a concavo-convex bit string formed on a substrate according to information, and information was reproduced by optically picking up two pit strings.
しかし、固体の相転移を利用した記録方式が開発される
ようになシ、単に再生専用のものだけでか＜、レーザ光
で情報の書き込みを自由に行い、かつ再生することがで
きる今ので、１ビットを約２μ角に書き込むことができ
、現在の高密度磁気ディスクと比較しても１桁以上高い
記録密度を実現できるようになった。また、磁気ディス
クと異なシ、非接触で情報を書き込み、再生、高速ラン
ダムアクセスできるためディスクに書き込んだ情報面を
劣化させることがない。However, as recording methods that utilize the phase transition of solids have been developed, it is no longer necessary to simply write and reproduce information using a laser beam. One bit can be written on approximately 2μ square, making it possible to achieve a recording density that is more than an order of magnitude higher than current high-density magnetic disks. In addition, unlike magnetic disks, information can be written, reproduced, and accessed in high-speed random access without contact, so the information written on the disk will not deteriorate.
また、容易に情報面を密封して保護できる構造にするこ
とができ、ホコリ、傷などの影響を受けないようにする
ことができる。Further, the information surface can be easily sealed and protected, and it can be prevented from being affected by dust, scratches, etc.
書き換え可能で、書き込み・再生用光ディスクの記録媒
体として従来からＴｅあるいはＴｅ０ｘ（ただし、ｏ＜
ｘ＜２）が知られている。これらの記録媒体は、レーザ
光照射された部分の温度を融点以上になるように短時間
照射すると、光照射部分が非結晶化状態として記憶され
、レーザ照射部分を結晶化温度をやや上まわる温度とな
るように長時間照射すると結晶状態にもどり記録を消去
することができ、書き替え可能である。しかし、Ｔｅは
その結晶化温度が１０°Ｃ〜６０℃で常温近傍であるた
め、非結晶化状態が安定せず、記録情報の保存性の点で
難があった。Te or Te0x (however, o<
x<2) is known. When these recording media are irradiated for a short period of time so that the temperature of the part irradiated with laser light rises above the melting point, the part irradiated with the light is stored as an amorphous state, and the part irradiated with laser light is heated to a temperature slightly above the crystallization temperature. If it is irradiated for a long time so that it returns to a crystalline state, the record can be erased and rewritten. However, since the crystallization temperature of Te is 10° C. to 60° C., which is close to room temperature, the amorphous state is not stable, which poses a problem in terms of storage stability of recorded information.
他方、Ｔｅ０ｘ（ただし、０ ＜ ｘ ＜、２ ）は、
非晶質相の安定化のために、Ｓｎ、Ｇｅ等の不純物を加
え、結晶化温度をコントロールすると共に、活性化エネ
ルギの増大により安定化させていた。しかし、ＴｅＯｘ
はらゼ素ｔり２度のコントロールが離かしく、また異
種元素添加を行うため、製造の再現性に乏しい欠点があ
った。さらに、とれらの材料は溶融状態において、蒸気
圧が高く、光ディスクの記録媒体として使用するときは
、書き込み、再生、書き替え毎に材料が飛散し、繰シ返
し使用−ヒ欠点があった。On the other hand, Te0x (0 < x <, 2) is
In order to stabilize the amorphous phase, impurities such as Sn and Ge are added to control the crystallization temperature and stabilization is achieved by increasing the activation energy. However, TeOx
It is difficult to control the temperature of the raw material twice, and since different elements are added, there is a drawback that the reproducibility of production is poor. Furthermore, these materials have a high vapor pressure in their molten state, and when used as recording media for optical discs, the materials scatter every time they are written, reproduced, or rewritten, resulting in flaws in repeated use.
本発明者は、従来の光デイスク記録媒体における上述の
事情に鑑み、光デイスク記録媒体について研究を重ねた
結果、（Ａｕ １ ＋ ＹＭＹ ） Ｘ Ｓｂ １−
Ｘ系合金（ただし、Ｍ、はＡＰ、Ｃｕ、Ｐｄ、Ｐｔ、Ａ
ｔ、Ｓｉ、Ｇｅ。In view of the above-mentioned circumstances regarding conventional optical disc recording media, the present inventor conducted repeated research on optical disc recording media and found that (Au 1 + YMY ) X Sb 1-
X-based alloy (where M is AP, Cu, Pd, Pt, A
t, Si, Ge.
Ｇａ、Ｓｎ、Ｔｅ、ＳｅおよびＢｌのうちから選んだ少
くとも一種。）は溶融状態から室温まで１０”℃／戴以
上の冷却速度で急冷すると擬安定相（以下、「π相」と
いう。）になるが、徐冷する場合はｓｂとＡｕＳｂにの
平衡相である混晶に転移し、π相にあるときの方が反射
率が高くπ相の安定性も高いことを知った。しかもπ相
にある
（Ａｕ１−ＹＭｙ）ｘｓｔ） ＩＬｘ 系合金ｔ［［移
温＋ｉ（百数十度Ｃ）に加熱すると混相に転移させるこ
とができ、書き込んだ情報を消去し、再書き込み（書き
替え）可能であることを発見し、本発明を完成すること
ができた。At least one selected from Ga, Sn, Te, Se and Bl. ) becomes a pseudo-stable phase (hereinafter referred to as "π phase") when it is rapidly cooled from the molten state to room temperature at a cooling rate of 10"C/death or more, but when it is slowly cooled, it becomes an equilibrium phase between sb and AuSb. We learned that the reflectance is higher and the stability of the π phase is higher when it transitions to a mixed crystal and is in the π phase. Moreover, (Au1-YMy) The present invention was completed based on the discovery that the present invention is possible (replacement).
〈発明の目的〉
すなわち、本発明は情報の書き込み、その再生、消去が
容易であると共に、記録状態の相ｖ楚性が高く、かつ繰
シ込し書き込み、再生、消去が可能な光デイスク記録媒
体を徒供することを目的とする。<Purpose of the Invention> That is, the present invention provides an optical disk recording in which information can be easily written, reproduced, and erased, the recorded state is highly compatible, and data can be repeatedly written, reproduced, and erased. The purpose is to train the medium.
〈発明のｒキ成〉
上記目的を達成するための本発明の光デイスク記録媒体
は、一般式
％式％
で表わされる組成の合金膜を記録層に有するとｔ 丸磨
啜駅吟 Ｌ−Ｊ−ス −各セ ｌ −禽な−ヒｆ七−ト
シ １ ＹＹはそれぞれ
１６．０原子チ≦Ｘ≦：ン８．０原子チ０原子チ≦Ｙ≦
２０原子チ
であシ、ＭはＡＰ ＋ Ｃｕ ＨＰｄ 、Ｐ ｔ 、Ａ
Ｚ ＋ Ｓ １ＩＧｅ ＋Ｇａ ｒ Ｓｎ ＋Ｔｅ ｌ
ＳｅおよびＢ１のうちから選んだ少くとも一種を表わす
。<Key structure of the invention> The optical disc recording medium of the present invention for achieving the above object has an alloy film having a composition represented by the general formula % in the recording layer. -S -Each cell l -Birdina-hif7-toshi 1 YY is each 16.0 atoms CH≦X≦:n8.0 atoms CH0 atoms CH≦Y≦
20 atoms, M is AP + Cu HPd, P t , A
Z + S 1IGe + Gar Sn + Te l
Represents at least one selected from Se and B1.
また、一般式
％式％
で表わされる組成の合金膜を記録層に有し、さらに記録
層上面にＴｅＯ２＋ Ｖ２Ｏ３＋ Ｔｔ Ｏｘ ｒ Ｓ
ｉ （ｈ ＋ ＭＳ’Ｆｔ ＋ＣｅＦ３ 、 ＡｌＦ
２ 、 ＴｉＮおよびＳ １ ｓ Ｎ４のうちから選ん
だ一種を保護１拠として積層したことを特徴とする。In addition, the recording layer has an alloy film having a composition represented by the general formula %, and TeO2+ V2O3+ Tt Ox r S on the upper surface of the recording layer.
i (h + MS'Ft +CeF3, AlF
2. It is characterized by laminating one selected from TiN and S 1 s N4 as a protection base.
ただし、一般式におけるＸ、Ｙはそれぞれ１６．０原子
チ≦Ｘ≦２８．０原子チ、０原子チ≦Ｙ≦２０原子チ
であシ、ＭはＭＰ、Ｃｕ 、ｐａ 、ｐｔ 、Ａｚｌｓ
ｔ 、Ｇｅ 、Ｇａ 、Ｓｎ ＋Ｔｅ ｌＳｅおよびＢ
１のうちから選んだ一種を表わす。However, in the general formula, X and Y are respectively 16.0 atoms ≦X ≦28.0 atoms, 0 atoms ≦Y≦20 atoms, and M is MP, Cu, pa, pt, Azls
t, Ge, Ga, Sn + Te ISe and B
Represents a type selected from 1.
上記（Ａｕ、１ ｙＭｙ ） ｘＳｂ １−ｘ系合金は
、Ｘが１６．０原子−よシも少いとｓｂとＡｕＳｂ Ｘ
の混相が現われ、２８．０原子係をｊｔ４うると六本、
ｓｂ、ｃ ’ＡｕＳｂ １−Ｘの混相が出ＪＩＪ、 Ｌ
、（領域Ａ）π相を形成しない。また、１ｖｌｙの添加
量が２０ｗ、子チを越えるとともに、π相でなくなるた
め、π相と混相間の相転移を利用した情報の書き込み、
再生および宵き替えができなくなる。さらに、（Ａｕ
１− ｙＭｙ ） Ｘ Ｓｂ １− Ｘ系合金において
、添加金属ＭＹ 組成対相転移温度との関係では第２図
に示すごとく、−がＳｎ、Ｔｅ、ＳｅおよびＢｉｂ）場
合は曲蝕１ａ 、 ｌ）間に挾まれる範囲Ｉ内で金属の
種類組合せによシ種々変えることかで＠、ＡＰ、Ｃｕ、
Ｐｄ。In the above (Au, 1 yMy) xSb 1-x alloy, when X is less than 16.0 atoms, sb and AuSb
A mixed phase appears, and if we take jt4 of 28.0 atoms, there are six,
sb, c' A mixed phase of AuSb 1-X appears JIJ, L
, (region A) does not form a π phase. In addition, as the amount of addition of 1vly exceeds 20w and the small amount, it is no longer a π phase, so information can be written using the phase transition between the π phase and a mixed phase.
You will not be able to play or change the night. Furthermore, (Au
1-yMy) @, AP, Cu,
Pd.
ｐｔ の場合は曲線ｃ、ｄ間に挾まれる範囲■内で金か
ｉの種類、組合せにより種々変えることができ、ＡＡ、
Ｓｉ、ＧｅおよびＧａの場合は曲線ｅ、ｆ間に挾まれる
範囲■内で金属の種類、組合せによって種々変えること
ができ、る。また、範囲Ｉ。In the case of pt, various changes can be made depending on the type and combination of gold or i within the range ■ between curves c and d, AA,
In the case of Si, Ge, and Ga, it can be varied within the range (2) between curves e and f depending on the type and combination of metals. Also, range I.
■およびｍの各々に属する金属のうち、異種範囲に属す
る金属を組合せることによって、相転移温度を大巾に変
えることができる０
上述の光ディスク記録□媒体は、情報を書き込む場合は
、記録層にパワーの高いレーザ光を照射して溶融させて
から室温まで自然放冷すると、１０６℃／就以上の冷却
速度で温度降下しπ相に転移し、情報の書き込みができ
ると共に、π相の記録媒体にパワーの小さいレーザ光を
照射すると混相へ相転移し情報の消去ができるので、記
録媒体に書き替えができるようになる。By combining metals belonging to different ranges of metals belonging to each of ■ and m, the phase transition temperature can be changed widely. When irradiated with a high-power laser beam to melt it and then allowed to cool naturally to room temperature, the temperature decreases at a cooling rate of 106°C or more and transitions to the π phase, making it possible to write information and record the π phase. When a medium is irradiated with a low-power laser beam, it undergoes a phase transition to a mixed phase and information can be erased, making it possible to rewrite information on the recording medium.
〈実施例〉 以下、本発明の代表的な実施例について説明する。<Example> Hereinafter, typical embodiments of the present invention will be described.
実施例１
■ 光デイスク記録媒体の作製
五本−の比率に配合した混合物を石英るつぼ中に入れ、
高周波加熱炉中で１１００℃に加熱溶融した後、自然放
冷してＡｕｏ、２Ｓｂ６）合金を得ることができた。Example 1 ■ Preparation of optical disk recording medium A mixture blended at a ratio of
After heating and melting at 1100° C. in a high-frequency heating furnace, the alloy was allowed to cool naturally to obtain an Auo, 2Sb6) alloy.
次いで、得られたＡｕ Ｏ，２ｓｂ Ｏ１８合金材料４
を、第３図に示す真空ペルツヤ１内のジルコニア製「る
つは」５に入れると共に、「るつは」５上方に、アクリ
ル製基板２を支持枠３によシ保持し、排気装置７を作動
し、ベルジャ１内を１×１０〜ｌＸ１０Ｔｏｒｒに排気
し、電子ビーム発生源６から「るつぼ」５内のＡｕ０．
！Ｓｂｏ、、合金材料に電子ビームを照射し、基板２表
面にＡｕ ｏ、２ｓｂｏ、８合金膜を蒸着させた。その
後、ベルジャ１内を常圧にもどし、基板２を自然放冷（
冷却速１￥１０１００Ｃ／就）した。Then, the obtained Au O,2sb O18 alloy material 4
is placed in the zirconia "rutsuha" 5 in the vacuum persuasion 1 shown in FIG. The inside of the bell jar 1 is evacuated to 1×10 to 1×10 Torr, and the Au0.
! The Sbo, 2Sbo, 8 alloy material was irradiated with an electron beam to deposit an AuO, 2SBO, 8 alloy film on the surface of the substrate 2. After that, the inside of the bell jar 1 is returned to normal pressure, and the substrate 2 is allowed to cool naturally (
The cooling rate was 1 yen 10100 C/JPY).
得られたアクリル基板２上のＡｕ、２Ｓｂ、、合金膜の
膜厚を測定したところ２５０＾で、π相が形成されてい
ることが確認できた。When the film thickness of the Au, 2Sb, and alloy film on the obtained acrylic substrate 2 was measured, it was found to be 250^, and it was confirmed that a π phase was formed.
■ 光デイスク記録媒体の性能検査
上述の工程によって得られた試料（Ａｕ Ｏ，２ｓｂ
Ｏ，８合金膜）の膜面を上に向け、第４図に示す装置に
よって性能を測定した。■ Performance inspection of optical disk recording media Sample obtained by the above process (Au O, 2sb
The performance was measured using the apparatus shown in FIG. 4 with the film surface of the O,8 alloy film facing upward.
第４図に示す装置において、書き込み側は、情報入力源
１０、書き込み制御装置１１ ％ ＧａＡ３半導体レー
ザ１２、集光レンズ１３、ミラー１４からなっておシ、
試料への書き込み時のＧａＡｓ半導体レーザの光出力は
８ ｍＷで行った。In the apparatus shown in FIG. 4, the writing side consists of an information input source 10, a writing control device 11%, a GaA3 semiconductor laser 12, a condensing lens 13, and a mirror 14.
The optical output of the GaAs semiconductor laser during writing on the sample was 8 mW.
再生側は、ＧａＡｓ 半導体レーザ１５、集光レンズ１
６、ビームスプリッタ１７、トラッキングミラー１８、
光検出器１９、再生出力制御装［２０，テレビモニタ２
１とからなっておシ、上述のＧａＡｓ 半導体レーザ１
２の光出力で咽き込まれた記録を、ＧａＡｓ 半導体レ
ーザからの光出力を０．８ｍＷにして、光検出器１９に
得られる出力再生信号を再生装置２０を介して搬送波対
雑音比（以下、「％比」という。）を調べたところ５４
チであった、
さらに、上記％比測定終了後、試料Ｎａｌの情報書き込
み面を、出力４ ｍＷのＧａＡｓ半導体レーザ光で走査
したところ、書き込み情報を消去することができた。On the reproduction side, a GaAs semiconductor laser 15 and a condensing lens 1
6, beam splitter 17, tracking mirror 18,
Photodetector 19, reproduction output control device [20, TV monitor 2
1, the above-mentioned GaAs semiconductor laser 1
2, the optical output from the GaAs semiconductor laser is set to 0.8 mW, and the output reproduction signal obtained by the photodetector 19 is transmitted via the reproduction device 20 to the carrier wave-to-noise ratio (hereinafter referred to as 0.8 mW). , ``% ratio'') was investigated and found to be 54.
Furthermore, after completing the above percentage ratio measurement, the information written surface of the sample Nal was scanned with a GaAs semiconductor laser beam with an output of 4 mW, and the written information could be erased.
実施例２
蒸発源・として、それぞれＡｕ ｏ、１ 、Ｓｂ 、、
８４およびＡｕ Ｓｂ の合金材料を用いる以外は実施
例Ｉ０．２Ｂ Ｏ，７２
と同じ方法でアクリル基板上にＡｕ０１０．Ｓｂｏ、８
４、”０，１ＩＪｌｓｂｏ、７２合金膜を２５０Ａ厚蒸
着した試料を作製した。Example 2 As evaporation sources, Au o, 1 , Sb , , , respectively
Au010.84 and Au010.84 on an acrylic substrate in the same manner as Example I0.2B O,72 except using alloy materials of Au010.84 and AuSb2. Sbo, 8
4. A sample was prepared in which a 250A thick 0,1IJlsbo, 72 alloy film was deposited.
得られた各試料を実施例１と同様の装置を用い（第４図
に示す。）、書き込み時にＧａＡｓ半導体レーザの光出
力を８ｍＷにし、再生時に０．８ｍＷのＧａＡｓ半導体
レーザにより０４比を測定したところ、前者の出力は５
４％であるのに対し後者のそれは５２％であった。また
書き込まれた信号を消去するときのレーザ光の出力は５
ｍＷであることを確認した。Using the same apparatus as in Example 1 (shown in FIG. 4), each of the obtained samples was used to measure the 04 ratio by setting the optical output of the GaAs semiconductor laser to 8 mW during writing and using the GaAs semiconductor laser at 0.8 mW during reproduction. As a result, the output of the former is 5
4%, while the latter was 52%. Also, the output of the laser beam when erasing the written signal is 5
It was confirmed that it was mW.
実施例３
蒸発源として、それぞれ
（ＡｕＯ，９Ａｇ０．１）。、１６ｓｂｏ、８４ 、（
ＡｕＯ，８５ＡｇＯ，１５）Ｏ５１６ＳｂＯ，８４、（
Ａｕ０４Ａｇ□、２）α２８ｂ□、２１ 、（Ａｕｏ、
９ｃｕＯ，１）０．１６ｓｂＯ，８４、（ＡｕＯ，８５
ＣｕＯ，１Ｂ） （Ｌｌａ ５ｂａ８４、（ＡｕＯ，８
Ｃｕ（Ｌ２）０．２８ｂ０．８ ％（Ａ”ｏ、、Ｐｄｏ
、ｔ）ｏ、ｔｅＳｂａｇ４、（Ａｕ（ＬｓｓＰｄｏ、１
ｓ）ｏ、ｘｓｓｂｏ、ｓ４、（Ａｕ（Ｌ８Ｐｄ（１２）
０．１６８ｂＱ、８４ 、（Ａｕ（Ｌ９Ｐｔ０．１）０
．１６８ｂＱ、８４ 、（Ａｕ（Ｌ８５Ｐｔａ１５）０
．１６８ｂ０．８４ ％ （ＡｕＯ，８Ｐｔ０．２）（
Ｌ２Ｓｂ０．８ 、（ＡｕＯ，９ＡＩ０．１）０．１６
８ｂＯ，８４、（ＡｕＯ，８Ｂ”（ＬｌＢ）０．１６Ｓ
ｂＯ，８４、（Ａ”０．８”０．２）ａ２ＳｂＯ，８、
（Ａｕ０．９ｓ”０．１）０．ｕｌｓｂｏ、８４ ％（
”０．８５Ｓｌ（ＬｌＢり０．１＠ＳｂＯ，８４、（Ａ
ｕｏ、８Ｓ’０．２）（Ｌ２Ｓｂ０．８ Ｎ（ＡｕＱ、
９ＧｅＱ、、）１１＠８ｂ０．８４ ％ （ＡｕＣＬ８
６Ｇ”０．１１１）０．１６８ｂｌ１８４、（Ａｕｏ、
ｓＧ＠ｏ、ｚ）ａ２ｓｂａｓ −（Ａｕａｓ”ｏ、ｔ）
ｏ、ｔｓｓｂａｓ４ｓ（ＡｕｕｓｓＧａｏ、ｔｓ）ａｔ
ｓｓｂｏ、ｓ４ｓ （ＡｕＯ，８”（Ｌ２）０．２Ｓｂ
ＣＬ８ ５（ＡｕＯ，９ＳｎＯ，１）０．１６Ｓｂ’０
．８４ Ｎ （ＡｕＯ，８１ＳＳ”０．１１Ｓ）Ｑ、１
６Ｓｂ（Ｌ８４ ％（Ａｕ Ｓ” ） Ｓｂ、（ＡｕＯ
，９ＴｅＯ，１）０．１６ｓｂ０．８４ 、α８ ０，
２ α２０．８
（Ａｕ Ｔｅ） ｓｂ 、（ＡｕＯ，８Ｔｅ０．２）０
．２ｓｂ（Ｌ６ 、α８５ Ｇ、１１５ ０．１６ Ｇ
、８４（Ａｕ０．９Ｂ’０．１）０．１６８ｂ０．８４
％ （ＡｕＯ，８、Ｂ’（１１５）０．１６８ｂ０．
８４ ％（Ａｕ Ｂｉ ） １３ｔ Ｎ （ＡｕＯ，９
Ｓｅ０．１）（ＬｉｅＳｂＱ、８４ ゝ０．８ ０．２
０．２ ０．８
を用いた以外は実施例１と同様の合金膜蒸着方法および
Ｃ／Ｎ比測定方法によシ測定したとこ−ろ、合金膜の膜
厚は２５０λであり、Ｃ４比は５４チであった。また、
書き込んだ信号は５ ｍＷのＱａＡｍ半導体レーザ光照
射によシ消去できた。Example 3 As evaporation sources, (AuO, 9Ag0.1), respectively. ,16sbo,84,(
AuO,85AgO,15)O516SbO,84,(
Au04Ag□, 2) α28b□, 21, (Auo,
9cuO, 1) 0.16sbO, 84, (AuO, 85
CuO, 1B) (Lla 5ba84, (AuO, 8
Cu(L2)0.28b0.8%(A”o,,Pdo
,t)o,teSbag4,(Au(LssPdo,1
s) o, xssbo, s4, (Au(L8Pd(12)
0.168bQ, 84, (Au(L9Pt0.1)0
．． 168bQ, 84, (Au(L85Pta15)0
．． 168b0.84% (AuO, 8Pt0.2) (
L2Sb0.8, (AuO,9AI0.1)0.16
8bO, 84, (AuO, 8B" (LlB) 0.16S
bO,84, (A"0.8"0.2)a2SbO,8,
(Au0.9s”0.1)0.ulsbo, 84%(
"0.85Sl(LlBri0.1@SbO,84,(A
uo, 8S'0.2) (L2Sb0.8 N(AuQ,
9GeQ, )11@8b0.84% (AuCL8
6G"0.111) 0.168bl184, (Auo,
sG@o, z) a2sbas −(Auas”o, t)
o, tssbas4s(AussGao, ts) at
ssbo, s4s (AuO, 8” (L2) 0.2Sb
CL8 5(AuO,9SnO,1)0.16Sb'0
．． 84 N (AuO, 81SS”0.11S) Q, 1
6Sb(L84%(AuS”) Sb, (AuO
,9TeO,1)0.16sb0.84 ,α8 0,
2 α20.8 (AuTe) sb , (AuO,8Te0.2)0
．． 2sb (L6, α85G, 115 0.16G
, 84 (Au0.9B'0.1) 0.168b0.84
% (AuO,8,B'(115)0.168b0.
84% (AuBi) 13tN (AuO,9
Se0.1) (LieSbQ, 84 ゝ0.8 0.2
The thickness of the alloy film was 250λ, and the C4 ratio was It was 54chi. Also,
The written signal could be erased by irradiation with a 5 mW QaAm semiconductor laser beam.
実施例４
実施例１．２．３によって作製された各試料を蒸着源の
材料４としてＭｆＦ、を用いた以外は第３図と同じ装置
および方法によって、各試料の合金膜上に保護膜と（７
てＭｒＦ、の蒸着膜を１，０００Ａ〜２．００ ＯＡ厚
に被着させ、第４図の装置によって５象比を測定したと
ころ、書き込みのレーザ出力を１０〜１３ｍＷにし消去
時には５〜ｓ ｍＷであシ、記録再生には１〜１．５ｍ
Ｗを必要とすることが判った。Example 4 A protective film was formed on the alloy film of each sample prepared in Example 1.2.3 using the same apparatus and method as in FIG. 3, except that MfF was used as the vapor deposition source material 4. (7
When a vapor-deposited film of MrF was deposited to a thickness of 1,000 A to 2.00 OA and the five-quadrant ratio was measured using the apparatus shown in Figure 4, the laser output for writing was 10 to 13 mW and the laser output for erasing was 5 to s mW. 1-1.5m for recording and playback
It turns out that W is required.
また、９良 比は５４チで、保護膜を被着しないものと
同じことが判った。In addition, the 9-good ratio was 54 inches, which was the same as the one without the protective film.
また、本実施例において、保％ ｊＪをＭｆＦ２にした
ものについて説明したが、他の弗化物ＣｅＦ、。In addition, in this example, the case where the retention ratio jJ was MfF2 was explained, but other fluorides such as CeF and the like were described.
ＡｌＦ２、窒化物ＴｉＮ 、 Ｓｔ、Ｎ４や酸化物Ｔｅ
ｎｔ ＋ Ｖ２Ｏ５＋ＴｉＯ２＊ ５ｉｆｔ膜を合金膜
上に形成した場合にも同様の結果がイ（）られた。AlF2, nitride TiN, St, N4 and oxide Te
Similar results were obtained when a nt + V2O5 + TiO2* 5ift film was formed on the alloy film.
上記実施例においてアクリル基板上への合金膜の被着を
する場合、真空蒸着法によるものについて説明し、たが
スＡ？ツタ法によって被着させてもよい。壕だ、使用す
る基板も、アクリル製のものでなく、ガラス、Ａｔなど
を用いてもよいが、ガラス、Ａｔ−１どの高熱伝導性材
料のものを使用する場合は、基板と合金膜との間に、５
ｏＯ＾〜０．２箇厚の熱絶縁層を設けた方がよい。In the above embodiments, when depositing the alloy film on the acrylic substrate, vacuum evaporation is used. It may also be applied by the ivy method. The substrate used may also be made of glass, At, etc. instead of acrylic, but when using a highly thermally conductive material such as glass or At-1, the bond between the substrate and the alloy film may be In between, 5
It is better to provide a thermal insulating layer with a thickness of oO^~0.2.
〈発明の効架〉
以上の説明から明らかなように、本発明の光デイスク記
録媒体は、
ｎ 従委の光ディスク紀優露体ｆおげス北鈷晶状に１シ
から結晶状態への相転移温度が１０℃〜６０℃で常温に
接近しているため、與き込み状態が安定でないのに比べ
て遥かに高く、光デイスク使用中の温度上昇や使用性°
止中の周囲の温度変化樫度では書き込み状態が消去され
るおそれがない。<Effects of the Invention> As is clear from the above description, the optical disc recording medium of the present invention has the following characteristics: Since the transition temperature is between 10℃ and 60℃, which is close to room temperature, it is much higher than the unstable loading condition, which reduces the temperature rise during optical disk use and the usability.
There is no risk that the written state will be erased even if the ambient temperature changes at a very low degree while the writing is stopped.
（２） （ｒ１川する光デイスク記録媒体の状況に合ぜ
て、素材の種グｄおよび組合せを選択するととによって
、１２０°Ｇ〜１６０ ℃の範囲内でπ相から混相状態
への相転移ｆｌＡ興を自由に選ぶことができる。(2) Depending on the type and combination of materials selected according to the situation of the optical disk recording medium, a phase transition from a π phase to a mixed phase state can occur within the range of 120°G to 160°C. You can freely choose flA entertainment.
■ 記録媒体としての％比は５５％程度で、現在知られ
ているＴｅ＋ ’Ｌ’ｅＯｘ記録媒体に比べて格別高い
性能を有している訳でないが、一旦書き込んだ信号の安
定＋７しか高く繰シ返し使用可能であるｒ。■ The percentage ratio as a recording medium is about 55%, and it does not have particularly high performance compared to the currently known Te+ 'L'eOx recording media, but the stability of the signal once written is only +7 higher and repeatable. It is possible to use it as a return.
畠１図は本発明の光デイスク記録媒体材料Ａｕ５ｂｘ系
合金におけるπ相形成時の組成依存性とπ相から混相へ
の相転移温度の関係を示す特性図、第２図は（Ａｕ １
＋ ＹＭＹ ） Ｘ Ｓｂ １− Ｘ合金におけるπ
相形成のＭ組成依存度とπ相から混相への相転移温度の
関係を示す特性図、第３図は実施例の試料作製時に使用
する真空装置の構成図、第４図は実施例の光１スフ記録
媒体の性能測定装置の概略構成図である。
図面中、
１け真空ベルジャ、
２は基板、
４は蒸着材料、
１０は情報入力源、
１２．１５はＧａＡａ 半導体レーザ、１７はビームス
プリッタ、
１９は光検出器、
２０は再生出力制御装置、
２１はテレビモニタである。
特許出龜人 日本電信電話公社
代理人弁理士 光 石 士 部（他１名）第１図
１０ ２０ ３０
Ａｕ （原子％）
Ｍ（原子％）Figure 1 is a characteristic diagram showing the relationship between the composition dependence during π phase formation and the phase transition temperature from the π phase to the mixed phase in the Au5bx alloy, which is the optical disc recording medium material of the present invention.
+ YMY ) X Sb 1- π in X alloy
A characteristic diagram showing the relationship between the dependence of phase formation on M composition and the phase transition temperature from π phase to mixed phase. Figure 3 is a configuration diagram of the vacuum apparatus used in preparing the sample in the example. Figure 4 is the light beam diagram in the example. FIG. 1 is a schematic configuration diagram of a performance measuring device for a one-step recording medium. In the drawing, 1 is a vacuum bell jar, 2 is a substrate, 4 is a vapor deposition material, 10 is an information input source, 12.15 is a GaAa semiconductor laser, 17 is a beam splitter, 19 is a photodetector, 20 is a reproduction output control device, 21 is a television monitor. Patent author: Nippon Telegraph and Telephone Public Corporation Patent Attorney Shibu Mitsuishi (and 1 other person) Figure 1 10 20 30 Au (atomic %) M (atomic %)
Claims (1)
とする光デイスク記録媒体。ただし、一般式におけるＸ
、Ｙはそれぞれ １６．０原子チ≦Ｘ≦２８．０原子チ、０原子チ≦Ｙ≦
２０原子チ であシ、ＭはＡｔ、Ｃｕ、Ｐｄ、Ｐｔ、ＡＡ、８１ 、
Ｇｅ、Ｇａ、Ｓｎ。 Ｔｅ、８ｅおよびＢｉのうちから選んだ少くとも一種を
表わす。 （２）一般式 ％式％ で表わされる組成の合金膜を記録層（：有し、さらに当
該記録層上面にＴｅＣｈ ｓ ＶｔＯｓ ｍ Ｔ １０
１ 。 Ｓ ｌＯ！ ＨＭｒＦｔ ＠ ＣｅＦＨｇ ＡＡＦ３
＠ ＴＩＮおよびＳ ｉ ８Ｎ４のう本値）に１．グー
備か俣繊Ｈ醒シ１イ１層り奔ととを特徴とする光デイス
ク記録媒体。ただし、一般式におけるＸ、Ｙはそ”れぞ
れ １６．０原子チ≦Ｘ≦２８．０原子係、０原子チ≦Ｙ≦
２０原子チ であり、ＭはＡＰ、Ｃｕ、Ｐｄ、Ｐｔ 、Ａｔ、Ｓｔ
、Ｇｅ 、Ｇａ 、Ｓｎ−。 Ｔｅ、ＳｅおよびＢｉのうちから選んだ一種を表わす。[Scope of Claims] (11 An optical disc recording medium characterized by having an alloy film having a composition represented by the general formula % in the recording layer. However, X in the general formula
, Y are respectively 16.0 atoms ≦X≦28.0 atoms ≦0 atoms ≦Y≦
20 atoms atom, M is At, Cu, Pd, Pt, AA, 81,
Ge, Ga, Sn. Represents at least one selected from Te, 8e and Bi. (2) The recording layer has an alloy film having a composition represented by the general formula %.
1. S lO! HMrFt @CeFHg AAF3
@ TIN and S i 8N4 false value) 1. An optical disc recording medium characterized by a single-layer layer and a double layer. However, in the general formula, X and Y are respectively 16.0 atoms ≦X≦28.0 atoms, 0 atoms ≦Y≦
20 atoms, M is AP, Cu, Pd, Pt, At, St
, Ge, Ga, Sn-. Represents one selected from Te, Se and Bi.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59033926A JPS60179954A (en) | 1984-02-24 | 1984-02-24 | Recording medium for optical disk |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59033926A JPS60179954A (en) | 1984-02-24 | 1984-02-24 | Recording medium for optical disk |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60179954A true JPS60179954A (en) | 1985-09-13 |
Family
ID=12400117
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59033926A Pending JPS60179954A (en) | 1984-02-24 | 1984-02-24 | Recording medium for optical disk |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60179954A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60186825A (en) * | 1984-03-07 | 1985-09-24 | Hitachi Ltd | Information recording and reproducing device |
| JPS6330289A (en) * | 1986-07-25 | 1988-02-08 | Hitachi Ltd | Opticalrecording medium |
| FR2611074A1 (en) * | 1987-02-13 | 1988-08-19 | Toshiba Kk | DATA RECORDING MEDIUM FOR REPEATING |
| JPS63304439A (en) * | 1987-06-05 | 1988-12-12 | Hitachi Ltd | Thin film for information recording |
| US4839861A (en) * | 1986-02-06 | 1989-06-13 | Kabushiki Kaisha Toshiba | Information recording medium rewritable by utilizing two metastable phases of a recording layer and method using the same |
| JPH01224939A (en) * | 1988-03-04 | 1989-09-07 | Mitsubishi Metal Corp | Thin alloy film for recording medium of phase change type optical disk |
| EP0333205A2 (en) * | 1988-03-18 | 1989-09-20 | Kuraray Co., Ltd. | Optical recording medium |
| JPH03178480A (en) * | 1985-12-25 | 1991-08-02 | Asahi Chem Ind Co Ltd | Material for information recording |
| WO2002070273A1 (en) * | 2001-03-06 | 2002-09-12 | Mitsubishi Chemical Corporation | Optical information recording medium and recording / erasing method |
| WO2008018225A1 (en) * | 2006-08-08 | 2008-02-14 | Panasonic Corporation | Information recording medium, its manufacturing method, and sputtering target |
-
1984
- 1984-02-24 JP JP59033926A patent/JPS60179954A/en active Pending
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60186825A (en) * | 1984-03-07 | 1985-09-24 | Hitachi Ltd | Information recording and reproducing device |
| JPH0694230B2 (en) * | 1985-12-25 | 1994-11-24 | 旭化成工業株式会社 | Information recording material |
| JPH03178480A (en) * | 1985-12-25 | 1991-08-02 | Asahi Chem Ind Co Ltd | Material for information recording |
| US4839861A (en) * | 1986-02-06 | 1989-06-13 | Kabushiki Kaisha Toshiba | Information recording medium rewritable by utilizing two metastable phases of a recording layer and method using the same |
| JPS6330289A (en) * | 1986-07-25 | 1988-02-08 | Hitachi Ltd | Opticalrecording medium |
| FR2611074A1 (en) * | 1987-02-13 | 1988-08-19 | Toshiba Kk | DATA RECORDING MEDIUM FOR REPEATING |
| JPS63304439A (en) * | 1987-06-05 | 1988-12-12 | Hitachi Ltd | Thin film for information recording |
| JPH01224939A (en) * | 1988-03-04 | 1989-09-07 | Mitsubishi Metal Corp | Thin alloy film for recording medium of phase change type optical disk |
| EP0333205A2 (en) * | 1988-03-18 | 1989-09-20 | Kuraray Co., Ltd. | Optical recording medium |
| WO2002070273A1 (en) * | 2001-03-06 | 2002-09-12 | Mitsubishi Chemical Corporation | Optical information recording medium and recording / erasing method |
| US6707783B2 (en) | 2001-03-06 | 2004-03-16 | Mitsubishi Chemical Corporation | Optical recording medium and recording/erasing method |
| WO2008018225A1 (en) * | 2006-08-08 | 2008-02-14 | Panasonic Corporation | Information recording medium, its manufacturing method, and sputtering target |
| US8133566B2 (en) | 2006-08-08 | 2012-03-13 | Panasonic Corporation | Information recording medium, its manufacturing method, and sputtering target |
| JP4996607B2 (en) * | 2006-08-08 | 2012-08-08 | パナソニック株式会社 | Information recording medium, manufacturing method thereof, and sputtering target |
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