JPH0352651B2 - - Google Patents
Info
- Publication number
- JPH0352651B2 JPH0352651B2 JP59031458A JP3145884A JPH0352651B2 JP H0352651 B2 JPH0352651 B2 JP H0352651B2 JP 59031458 A JP59031458 A JP 59031458A JP 3145884 A JP3145884 A JP 3145884A JP H0352651 B2 JPH0352651 B2 JP H0352651B2
- Authority
- JP
- Japan
- Prior art keywords
- weight
- phase
- information
- recording medium
- general formula
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000003287 optical effect Effects 0.000 claims description 24
- 239000000956 alloy Substances 0.000 claims description 13
- 229910045601 alloy Inorganic materials 0.000 claims description 13
- 229910052732 germanium Inorganic materials 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 7
- 229910052718 tin Inorganic materials 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- 229910052763 palladium Inorganic materials 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 230000001681 protective effect Effects 0.000 claims description 6
- 229910052711 selenium Inorganic materials 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 229910052714 tellurium Inorganic materials 0.000 claims description 6
- 229910052797 bismuth Inorganic materials 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 229910016569 AlF 3 Inorganic materials 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 150000002222 fluorine compounds Chemical class 0.000 claims description 3
- -1 MgF 2 Chemical class 0.000 claims description 2
- 230000007704 transition Effects 0.000 description 12
- 239000000463 material Substances 0.000 description 11
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 5
- 239000004926 polymethyl methacrylate Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229920002319 Poly(methyl acrylate) Polymers 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/2431—Metals or metalloids group 13 elements (B, Al, Ga, In)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24314—Metals or metalloids group 15 elements (e.g. Sb, Bi)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
- G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
- G11B2007/25706—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing transition metal elements (Zn, Fe, Co, Ni, Pt)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
- G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
- G11B2007/25708—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing group 13 elements (B, Al, Ga)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
- G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
- G11B2007/25718—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing halides (F, Cl, Br, l)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
- G11B7/2533—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising resins
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
- G11B7/2578—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Description
【発明の詳細な説明】
<技術分野>
本発明は書き換え可能な、新規な書き込み・再
生用光デイスク記録媒体に関する。DETAILED DESCRIPTION OF THE INVENTION <Technical Field> The present invention relates to a novel rewritable optical disk recording medium for writing and reading.
<従来技術>
光デイスクは、当初情報に応じて基板上に形成
した凹凸状ピツト列を記録層とし、ピツト列を光
学的にピツクアツプして情報を再生するものであ
つた。しかし、固体の相転移を利用した記録方式
が開発されるに至り、単に再生するだけでなく、
情報の書き込みおよびその再生の両者をレーザ光
で行い、1ビツトを約2μ角に書き込むことがで
き、現在の高密度磁気デイスクと比較しても1桁
以上高い記録密度を実現できるようになつた。ま
た、磁気デイスクと異なり、情報を非接触で書き
込み、再生および高速ランダムアクセスできるた
め、デイスクの記録面を劣化させるおそれがな
い。また、容易に記録面を密封して保護する構造
にすることができ、ホコリ、傷などの影響を受け
ないようにすることができるなどの利点をもつて
いる。<Prior Art> Optical disks originally used as a recording layer an uneven pit array formed on a substrate according to information, and reproduced information by optically picking up the pit array. However, with the development of a recording method that utilizes the phase transition of solids, it is possible to do more than just playback.
By using laser light to both write and reproduce information, it is possible to write one bit on an approximately 2μ square, making it possible to achieve a recording density that is more than an order of magnitude higher than current high-density magnetic disks. . Furthermore, unlike magnetic disks, information can be written, read, and accessed randomly at high speed without contact, so there is no risk of deteriorating the recording surface of the disk. Further, it has the advantage that the recording surface can be easily sealed and protected, and it can be prevented from being affected by dust, scratches, etc.
書き換え可能で、書き込み・再生用光デイスク
の記録媒体として従来からTeあるいはTeOX(た
だし、0<x<2)が知られている。これらの記
録媒体は、レーザ光照射された部分の温度を融点
以上になるように短時間照射すると、光照射部分
が非結晶化状態として記録され、レーザ照射部分
を結晶化温度をやや上まわる温度となるように長
時間照射すると結晶状態にもどり記録を消去する
ことができ、書き替え可能である。しかし、Te
はその結晶化温度が10℃〜60℃であるため、非結
晶化状態が安定せず、記録情報の保存性の点で難
があつた。他方、TeOX(ただし、0<x<2。)
は、非晶質相の安定化のために、Sn、Ge等の不
純物を加え、結晶化温度をコントロールすると共
に、活性化エネルギの増大により安定化させてい
た。しかし、TeOXは酸素濃度のコントロールが
難かしく、また異種元素添加を行うため、製造の
再現性に乏しい欠点があつた。さらに、これらの
材料は溶融状態において、蒸気圧が高く、光デイ
スクの記録媒体として使用するときは、書き込
み、再生、書き替え毎に材料が飛散し、繰り返し
使用上欠点があつた。 Te or TeO x (where 0<x<2) has been known as a rewritable recording medium for write/read optical discs. When these recording media are irradiated for a short period of time so that the temperature of the irradiated part of the laser beam rises above the melting point, the irradiated part is recorded as an amorphous state, and the laser irradiated part is heated to a temperature slightly above the crystallization temperature. If it is irradiated for a long time so that it returns to a crystalline state, the record can be erased and rewritten. However, Te
Since its crystallization temperature is 10°C to 60°C, the amorphous state is not stable, which poses a problem in terms of preservation of recorded information. On the other hand, TeO X (where 0<x<2.)
To stabilize the amorphous phase, they added impurities such as Sn and Ge, controlled the crystallization temperature, and stabilized it by increasing the activation energy. However, TeO X has the disadvantage that it is difficult to control the oxygen concentration and that different elements are added, resulting in poor manufacturing reproducibility. Furthermore, these materials have a high vapor pressure in their molten state, and when used as recording media for optical disks, the materials scatter every time they are written, reproduced, or rewritten, resulting in a disadvantage in repeated use.
本発明者は、従来の光デイスク記録媒体におけ
る上述の事情に鑑み、光デイスク記録媒体につい
て研究を重ねた結果、(In1-XSbX)1-YMY系合金
(ただし、MYはAu、Ag、Cu、Pd、Pt、Al、Si、
Ge、Ga、Sn、Te、SeおよびBiのうちから選ん
だ少なくとも一種。)は、溶融状態から室温まで
106℃/sec以上の冷却速度で急冷すると擬安定相
(以下、「π相」という。)になるが、徐冷すると
きは、InSbとSbの混相(平衡相)に転移し、し
かもπ相にあるときは混相のときの反射率よりも
10〜20%高くなるだけでなく、π相自体の安定性
が高いことを知つた。しかも、π相にある
(In1-XSbX)1-YMY系合金は相転移温度(百数十度
C。)に加熱すると混和に転移させることができ、
書き込んだ情報を消去し、再書き込み(書き替
え)が容易であることを発見し、本発明を完成す
ることができた。 In view of the above-mentioned circumstances regarding conventional optical disc recording media, the inventors have conducted repeated research on optical disc recording media and have developed an (In 1 - X Sb Au, Ag, Cu, Pd, Pt, Al, Si,
At least one selected from Ge, Ga, Sn, Te, Se and Bi. ) from molten state to room temperature
When rapidly cooled at a cooling rate of 10 6 °C/sec or higher, it becomes a pseudo-stable phase (hereinafter referred to as the "π phase"), but when slowly cooled, it transforms to a mixed phase of InSb and Sb (equilibrium phase), and the π When it is in phase, the reflectance is higher than when it is in mixed phase.
We learned that not only is the price higher by 10 to 20%, but the π phase itself is more stable. Furthermore, the (In 1 - X Sb
The present invention was completed by discovering that written information can be easily erased and rewritten (rewritten).
<発明の目的>
すなわち、本発明は情報の書き込み、その再
生、消去が容易であると共に、記録状態の相安定
性が高く、しかも繰り返し書き込み、再生および
消去が可能な光デイスク記録媒体を提供すること
を目的とする。<Objective of the Invention> That is, the present invention provides an optical disk recording medium in which information can be easily written, reproduced, and erased, the recording state has high phase stability, and furthermore, writing, reproduction, and erasing can be repeated. The purpose is to
<発明の構成>
上記目的を達成するための本発明の光デイスク
記録媒体は、一般式
(In1-XSbX)1-YMY
で表わされる組成の合金膜を記録層に有すること
を特徴とするものである。ただし、上記一般式に
おけるX、Yはそれぞれ
55重量%≦X≦80重量%、
0重量%≦Y≦20重量%
であり、MはAu、Ag、Cu、Pd、Pt、Al、Si、
Ge、Ga、Sn、Te、SeおよびBiのうちから選ん
だ少なくとも1種を表わす。<Structure of the Invention> The optical disc recording medium of the present invention for achieving the above object has an alloy film having a composition represented by the general formula (In 1-X Sb X ) 1-Y MY in the recording layer. This is a characteristic feature. However, in the above general formula, X and Y are respectively 55% by weight≦X≦80% by weight and 0% by weight≦Y≦20% by weight, and M is Au, Ag, Cu, Pd, Pt, Al, Si,
Represents at least one selected from Ge, Ga, Sn, Te, Se and Bi.
また、一般式
(In1-XSbX)1-YMY
で表わされる組成の合金膜を記録層に有し、さら
に記録層上面にTeO2、V2O3、V3O5、TiO2、
SiO2などの酸化物又はMgF2、CeF3、AlF3など
の弗化物のうちから選んだ少なくとも一種を保護
膜として積層したことをも特徴とするものであ
る。ただし、一般式におけるX、Yはそれぞれ
55重量%≦X≦80重量%、
0重量%≦Y≦20重量%
であり、MはAu、Ag、Cu、Pd、Pt、Al、Si、
Ge、Ga、Sn、Te、SeおよびBiのうちから選ん
だ少なくとも一種を表わす。 In addition , the recording layer has an alloy film having a composition represented by the general formula ( In 1 - X Sb 2 ,
Another feature is that at least one selected from oxides such as SiO 2 or fluorides such as MgF 2 , CeF 3 and AlF 3 is laminated as a protective film. However, in the general formula, X and Y are respectively 55% by weight≦X≦80% by weight and 0% by weight≦Y≦20% by weight, and M is Au, Ag, Cu, Pd, Pt, Al, Si,
Represents at least one selected from Ge, Ga, Sn, Te, Se and Bi.
上記一般式(In1-XSbX)1-YMY系合金は、Sbの
添加量が55重量%より少なくなると第1図に示す
範囲Bのごとく混相を形成し、π相(第1図に示
すAの範囲の組成のもの。)を形成しなくなり、
80重量%を越えるとSbの単一相cとなり混相を
形成しなくなるため、π相および混相間の相転移
を利用した情報の書き込み、再生および書き替え
ができなくなる。 The above general formula (In 1 - X Sb composition within the range of A shown in the figure) will no longer be formed,
If it exceeds 80% by weight, a single phase c of Sb will be formed and no mixed phase will be formed, making it impossible to write, reproduce, and rewrite information using the phase transition between the π phase and the mixed phase.
(In1-XSbX)1-YMY系合金において、MYの添加
量Yが20重量%を越えたときも合金はπ相を形成
しなくなり、上述の場合と同じように相転移によ
る情報の書き込み、再生および書き替えができな
くなる。さらに、添加金属M組成対相転移温度と
の関係では第2図に示すごとく、Te、Seおよび
Biの場合は曲線a,b間に挾まれる範囲I内で、
これら金属の種類組合せにより種々に変えること
ができ、Au、Ag、Cu、PdおよびPtの場合は曲
線e,fに挾まれる範囲内で変えることがで
き、Al、Si、Ge、GaおよびSnの場合は曲線cお
よびdで挾まれる範囲内で変えることができ
る。さらに、範囲、およびの相転移温度を
示す各グループの金属のうち、異種範囲に属する
金属の組合せを変えることによつて、120〜160℃
の範囲内において適当な範囲に転移温度をもつ合
金を得ることができる。 ( In 1 - X Sb You will no longer be able to write, play, or rewrite information. Furthermore, as shown in Figure 2, the relationship between the additive metal M composition and the phase transition temperature shows that Te, Se and
In the case of Bi, within the range I between curves a and b,
These metals can be varied in various combinations depending on the combination of metals; in the case of Au, Ag, Cu, Pd and Pt, they can be varied within the range between curves e and f; for Al, Si, Ge, Ga and Sn. can be changed within the range between curves c and d. Furthermore, by changing the combination of metals belonging to different ranges among the metals in each group showing phase transition temperatures of 120 to 160℃
An alloy having a transition temperature within a suitable range can be obtained within the range of .
上述の光デイスク記録媒体は、情報を書き込む
場合は、記録層にパワーの高いレーザ光を照射し
て溶融させてから室温に自然放冷させると、106
℃/sec以上の冷却速度で急冷されてπ相に転移
し、情報の書き込みができると共に、π相の媒体
にパワーの小さいレーザ光を照射すると混相へ相
転移し情報は消去できるので、記録媒体に再書き
込みが可能になる。 When writing information on the above-mentioned optical disk recording medium, the recording layer is irradiated with a high-power laser beam to melt it and then allowed to cool naturally to room temperature .
When rapidly cooled at a cooling rate of ℃/sec or higher, it transitions to the π phase, allowing information to be written on it.If a π-phase medium is irradiated with a low-power laser beam, it undergoes a phase transition to a mixed phase and information can be erased. can be rewritten.
<実施例>
以下、本発明の代表的な実施例について説明す
る。<Examples> Hereinafter, typical examples of the present invention will be described.
実施例 1
光デイスク記録媒体の作製
InおよびSbをそれぞれ30重量%および70重
量%の割合で混合した素材を、石英るつぼ中に
入れ、高周波加熱炉中で645℃に加熱溶融した
後、炉内自然放冷してIn0.3Sb0.7材料を得ること
ができた。Example 1 Production of optical disk recording medium A material in which In and Sb were mixed at a ratio of 30% by weight and 70% by weight, respectively, was placed in a quartz crucible, heated and melted at 645°C in a high-frequency heating furnace, and then heated in the furnace. After natural cooling, an In 0.3 Sb 0.7 material could be obtained.
次いで、第3図に示すように、ベルジヤ1内
上部に径20cmのポリメチルアクリレート(以
下、「PMMA」という。)製円板2を支持器3
で保持すると共に、ベルジヤ1内に、上記工程
で得られたIn0.3Sb0.7材料4を入れたジルコニア
製るつぼ5、電子ビーム発生源6を配置し、排
気装置7によりベルジヤ1内を1×10-4〜1×
10-5Torrに排気し、電子ビーム発生源6から
るつぼ5内のIn0.3Sb0.7材料4に電子ビームを照
射し、In0.3Sb0.7を蒸発させ円板2表面にIn0.3
Sb0.7合金膜を蒸着させた。ついで、ベルジヤ
1内を常圧にもどし、円板2を自然放冷した。 Next, as shown in FIG. 3, a polymethyl acrylate (hereinafter referred to as "PMMA") disc 2 with a diameter of 20 cm is attached to the support 3 at the top inside the bell gear 1.
At the same time, a zirconia crucible 5 containing the In 0.3 Sb 0.7 material 4 obtained in the above process and an electron beam source 6 are placed inside the bell gear 1, and the inside of the bell gear 1 is heated to 1×10 -4 ~1×
After evacuation to 10 -5 Torr, an electron beam is irradiated from the electron beam source 6 to the In 0.3 Sb 0.7 material 4 in the crucible 5 to evaporate the In 0.3 Sb 0.7 and deposit In 0.3 on the surface of the disk 2.
A Sb 0.7 alloy film was deposited. Then, the inside of the bell gear 1 was returned to normal pressure, and the disc 2 was allowed to cool naturally.
得られたPMMA円板2(以下、「試料No.1」
という。)上のIn0.3Sb0.7合金膜の膜厚を測定し
たところ250Åであつた。 The obtained PMMA disk 2 (hereinafter referred to as “Sample No. 1”)
That's what it means. ) The film thickness of the In 0.3 Sb 0.7 alloy film was measured and was 250 Å.
光デイスク記録媒体の性能
上述の工程によつて得られた試料No.1のIn0.3
Sb0.7合金膜面を上に向け、第4図に示す書き
込み・再生装置によつて性能を測定した。 Performance of optical disk recording medium In 0.3 of sample No. 1 obtained by the above process
The performance was measured with the Sb 0.7 alloy film facing upward using the writing/reproducing device shown in FIG.
第4図に示す書き込み・再生装置において、
書き込み側は、情報入力源10、書き込み制御
装置11、GaAs半導体レーザ12、集光レン
ズ13、ミラー14からなつており、試料への
書き込み時のGaAs半導体レーザの光出力は8
mWで行つた。 In the writing/reproducing device shown in FIG.
The writing side consists of an information input source 10, a writing control device 11, a GaAs semiconductor laser 12, a condensing lens 13, and a mirror 14. The optical output of the GaAs semiconductor laser when writing onto a sample is 8.
I went with mW.
再生側は、GaAs半導体レーザ15、集光レ
ンズ16、ビームスプリツタ17、トラツキン
グミラー18、光検出器19、再生出力制御装
置20、テレビモニタ21とからなつており、
上述のGaAs半導体レーザ12の光出力で書き
込まれた記録を、GaAs半導体レーザからの光
出力を0.8mWにして、光検出器19に得られ
る再生信号を再生装置20を介して搬送波対雑
音比(以下、「C/N比」という。)を調べたと
ころ55%であつた。 The reproduction side consists of a GaAs semiconductor laser 15, a condensing lens 16, a beam splitter 17, a tracking mirror 18, a photodetector 19, a reproduction output control device 20, and a television monitor 21.
The record written with the optical output of the GaAs semiconductor laser 12 is set to 0.8 mW, and the reproduced signal obtained by the photodetector 19 is transmitted via the reproducing device 20 to the carrier wave-to-noise ratio ( The C/N ratio (hereinafter referred to as "C/N ratio") was 55%.
さらに、上記C/N比測定終了後、試料No.1の
情報書き込み面を、出力4mWのGaAs半導体レ
ーザ光で走査したところ、書き込み情報を消去す
ることができた。 Furthermore, after the above C/N ratio measurement was completed, the information writing surface of sample No. 1 was scanned with a GaAs semiconductor laser beam with an output of 4 mW, and the written information could be erased.
実施例 2
蒸発源としてIn0.45Sb0.55材料を用いた他は実施
例1と同様の方法でPMMA円板上に、250Å厚の
In0.45Sb0.55合金膜を形成した試料を得た。この試
料No.2について、実施例1と同じ方法にしたがつ
て、C/N比を測定したところその値は55%であ
つた。また、この試料No.2に書き込まれた情報
は、5mWのGaAs半導体レーザ光で試料面を走
査することによつて消去することができた。Example 2 A 250 Å thick film was deposited on a PMMA disk in the same manner as in Example 1 except that In 0.45 Sb 0.55 material was used as the evaporation source.
A sample was obtained in which an In 0.45 Sb 0.55 alloy film was formed. Regarding this sample No. 2, the C/N ratio was measured according to the same method as in Example 1, and the value was 55%. Furthermore, the information written on this sample No. 2 could be erased by scanning the sample surface with a 5 mW GaAs semiconductor laser beam.
実施例 3
蒸発源として、それぞれ(In0.45Sb0.55)0.9
Au0.1、(In0.3Sb0.7)0.9Au0.1、(In0.2Sb0.8)0.8Au
0.2)、
(In0.45Sb0.55)0.9Au0.1、(In0.3Sb0.7)0.8Ag0.2)
、
(In0.2Sb0.8)0.8Ag0.2)、(In0.45Sb0.55)0.8Cu0.2
、
(In0.3Sb0.7)0.8Ag0.2)、(In0.2Sb0.8)0.8Ag0.2、
(In0.45
Sb0.55)0.8Pd0.2、(In0.3Sb0.7)0.8Pd0.2、(In0.2S
b0.8)0.
8Pd0.2、(In0.45Sb0.55)0.9Pt0.1、(In0.3Sb0.7)0
.9Pt0.1、
(In0.2Sb0.8)0.9Pt0.1、(In0.45Sb0.55)0.9Al0.1、
(In0.3
Sb0.7)0.9Al0.1、(In0.2Sb0.8)0.9Al0.1、(In0.45S
b0.55)0.
9Si0.1、(In0.3Sb0.7)0.9Si0.1、(In0.2Sb0.8)0.9
Si0.1、
(In0.45Sb0.55)0.9Ge0.1、(In0.3Sb0.7)0.9Ge0.1、
(In0.2
Sb0.8)0.9Ge0.1、(In0.45Sb0.55)0.9Ga0.1、(In0.3
Sb0.7)
0.9Ga0.1、(In0.2Sb0.8)0.9Ga0.1、(In0.45Sb0.55)
0.9
Sn0.1、(In0.3Sb0.7)0.9Sn0.1、(In0.2Sb0.8)0.9Sn
0.1、
(In0.45Sb0.55)0.9Te0.1、(In0.3Sb0.7)0.9Te0.1、
(In0.2
Sb0.8)0.9Te0.1、(In0.45Sb0.55)0.9Bi0.1、(In0.3
Sb0.7)
0.9Bi0.1、(In0.2Sb0.8)0.9Bi0.1を用いた以外は、実
施
例1と同様の合金膜蒸着方法およびC/N比測定
方法によりC/N比を測定したところ、いずれも
その値は55%であつた。Example 3 As evaporation sources, (In 0.45 Sb 0.55 ) 0.9
Au 0.1 , (In 0.3 Sb 0.7 ) 0.9 Au 0.1 , (In 0.2 Sb 0.8 ) 0.8 Au
0.2 ),
(In 0.45 Sb 0.55 ) 0.9 Au 0.1 , (In 0.3 Sb 0.7 ) 0.8 Ag 0.2 )
,
(In 0.2 Sb 0.8 ) 0.8 Ag 0.2 ), (In 0.45 Sb 0.55 ) 0.8 Cu 0.2
,
(In 0.3 Sb 0.7 ) 0.8 Ag 0.2 ), (In 0.2 Sb 0.8 ) 0.8 Ag 0.2 ,
(In 0.45
Sb 0.55 ) 0.8 Pd 0.2 , (In 0.3 Sb 0.7 ) 0.8 Pd 0.2 , (In 0.2 S
b 0.8 ) 0.
8 Pd 0.2 , (In 0.45 Sb 0.55 ) 0.9 Pt 0.1 , (In 0.3 Sb 0.7 ) 0
.9 Pt 0.1 ,
(In 0.2 Sb 0.8 ) 0.9 Pt 0.1 , (In 0.45 Sb 0.55 ) 0.9 Al 0.1 ,
(In 0.3
Sb 0.7 ) 0.9 Al 0.1 , (In 0.2 Sb 0.8 ) 0.9 Al 0.1 , (In 0.45 S
b 0.55 ) 0.
9 Si 0.1 , (In 0.3 Sb 0.7 ) 0.9 Si 0.1 , (In 0.2 Sb 0.8 ) 0.9
Si 0.1 ,
(In 0.45 Sb 0.55 ) 0.9 Ge 0.1 , (In 0.3 Sb 0.7 ) 0.9 Ge 0.1 ,
(In 0.2
Sb 0.8 ) 0.9 Ge 0.1 , (In 0.45 Sb 0.55 ) 0.9 Ga 0.1 , (In 0.3
Sb 0.7 )
0.9 Ga 0.1 , (In 0.2 Sb 0.8 ) 0.9 Ga 0.1 , (In 0.45 Sb 0.55 )
0.9
Sn 0.1 , (In 0.3 Sb 0.7 ) 0.9 Sn 0.1 , (In 0.2 Sb 0.8 ) 0.9 Sn
0.1 ,
(In 0.45 Sb 0.55 ) 0.9 Te 0.1 , (In 0.3 Sb 0.7 ) 0.9 Te 0.1 ,
(In 0.2
Sb 0.8 ) 0.9 Te 0.1 , (In 0.45 Sb 0.55 ) 0.9 Bi 0.1 , (In 0.3
Sb 0.7 )
The C/N ratio was measured by the same alloy film deposition method and C/N ratio measurement method as in Example 1, except that 0.9 Bi 0.1 and (In 0.2 Sb 0.8 ) 0.9 Bi 0.1 were used, and the values were the same in both cases. was 55%.
実施例 4
実施例1、2、3によつて作製された各試料
を、蒸着源の材料4としてMgF2を用いた以外は
第3図と同じ装置および方法によつて、各試料の
合金膜上に保護膜としてMgF2の蒸着膜を1000Å
〜2000Å厚に被着させ、第4図の装置によつて
C/N比を測定したところ、書き込みレーザ出力
を10〜13mWにし、消去時には5〜8mWであ
り、記録再生には1〜1.5mWを必要とすること
が判つた。Example 4 The alloy films of each sample prepared in Examples 1, 2, and 3 were prepared using the same apparatus and method as in FIG. 3, except that MgF 2 was used as the vapor deposition source material 4. A 1000Å evaporated film of MgF 2 is applied as a protective film on top.
When deposited to a thickness of ~2000 Å and measured the C/N ratio using the apparatus shown in Figure 4, the writing laser output was 10 to 13 mW, 5 to 8 mW during erasing, and 1 to 1.5 mW for recording and reproduction. It was found that it was necessary.
また、C/N比は55%で、保護膜を被着しない
ものと同じことが判つた。 Further, it was found that the C/N ratio was 55%, which is the same as that without a protective film.
また、本実施例の保護膜はMgF2を使用したも
のについて説明したが、他の弗化物CeF3、AlF3
又はTeO2、V2O3、V3O5、TiO2、SiO2などの酸
化物膜を保護膜として形成させた場合にも、同様
の結果を得た。 Furthermore, although the protective film in this example uses MgF 2 , other fluorides such as CeF 3 and AlF 3 can also be used.
Similar results were also obtained when an oxide film of TeO 2 , V 2 O 3 , V 3 O 5 , TiO 2 , SiO 2 or the like was formed as a protective film.
上記実施例において、PMMA製円板上への
(In1-XSbX)1-YMY合金の蒸着膜は真空蒸着法によ
つて被着させる方法について説明したが、真空蒸
着法でなく、スパツタ法によつて形成させたもの
でもよい。また、使用した基板もPMMA製のも
のについて示したが、アクリル、ガラス、Alな
どの材料を使用してもよいが、ガラス、Alなど
の高熱伝導性材料を使用する場合は、基板と合金
層との中間に熱絶縁層を500Å〜0.2mm程度形成さ
せた方がよい。 In the above example , the method of depositing the (In 1 - X Sb , or may be formed by a sputtering method. In addition, although the substrate used was shown to be made of PMMA, materials such as acrylic, glass, and Al may also be used, but when using highly thermally conductive materials such as glass and Al, the substrate and alloy layer may be used. It is better to form a thermal insulating layer with a thickness of about 500 Å to 0.2 mm between the two.
<発明の効果>
以上の説明から明らかなように、本発明による
光デイスク記録媒体は、
Te、TeOXなど従来の光デイスク記録媒体の
相転移温度が10℃〜60℃と低いため、光デイス
クの使用時中の温度上昇や、使用停止中の周囲
温度上昇があつても書き込み情報が消去されて
しまうが、本発明の光デイスク記録媒体におい
ては120℃〜160℃になつてはじめてπ相、混相
間の相転移がおこるにすぎない。したがつて、
書き込み情報の安定性が高い。しかも、光デイ
スク記録媒体の使用状況に合わせて、用いる記
録媒体の素材の種類、組み合せ割合を適当に選
ぶことによつて相転移温度を120℃〜160℃の間
で自由に選択できる。<Effects of the Invention> As is clear from the above explanation, the optical disc recording medium according to the present invention has a low phase transition temperature of 10°C to 60°C, which is lower than that of conventional optical disc recording media such as Te and TeO Written information will be erased even if the temperature rises during use or the ambient temperature rises while not in use, but in the optical disk recording medium of the present invention, the π-phase, Only a phase transition between mixed phases occurs. Therefore,
High stability of written information. Furthermore, the phase transition temperature can be freely selected between 120° C. and 160° C. by appropriately selecting the type and combination ratio of the materials of the recording medium used, depending on the usage conditions of the optical disk recording medium.
GaAs半導体レーザ(他のレーザであつても
よい)の8〜13mWの光出力で情報の書き込み
が可能であり、得られる再生信号のC/N比は
55%程度であり、従来のTe、TeOXを使用した
光デイスク記録媒体のC/N比が60%程度であ
るのに比べて必ずしも高いとは云い得ないが、
書き込んだ情報の安定性が高く、繰り返し再生
できる。 Information can be written with an optical output of 8 to 13 mW from a GaAs semiconductor laser (other lasers may be used), and the C/N ratio of the resulting reproduced signal is
This is about 55%, which cannot necessarily be said to be higher than the C/N ratio of conventional optical disk recording media using Te and TeOx , which is about 60%.
The written information is highly stable and can be played repeatedly.
第1図は本発明の光デイスク記録媒体のIn1-X
SbX合金のπ相形成時の組成依存性とπ相から混
相への相転移温度との関係を示す特性図、第2図
は(In1-XSbX)1-YMY合金におけるπ相形成の組
成依存性とπ相から混相への相転移温度との関係
を示す特性図、第3図は実施例の光デイスク記録
媒体作製に使用する真空装置の概略構成図、第4
図は実施例の光デイスク記録媒体の性能測定に利
用した書き込み・再生装置の概略構成図である。
図面中、1……ベルジヤ、2……PMMA基板、
4……蒸着材料、10……情報入力源、12,1
5……GaAs半導体レーザ、17……ビームスプ
リツタ、19……光検出器、20……再生出力制
御装置、21……テレビモニタ。
Figure 1 shows In 1-X of the optical disc recording medium of the present invention.
A characteristic diagram showing the relationship between the compositional dependence during the formation of the π phase in the Sb X alloy and the phase transition temperature from the π phase to the mixed phase. A characteristic diagram showing the relationship between the composition dependence of phase formation and the phase transition temperature from π phase to mixed phase. FIG. 3 is a schematic diagram of the vacuum apparatus used for manufacturing the optical disk recording medium of the example. FIG. 4
The figure is a schematic configuration diagram of a writing/reproducing device used to measure the performance of the optical disk recording medium of the example. In the drawing, 1... Belgear, 2... PMMA substrate,
4... Vapor deposition material, 10... Information input source, 12,1
5...GaAs semiconductor laser, 17...beam splitter, 19...photodetector, 20...reproduction output control device, 21...television monitor.
Claims (1)
を特徴とする光デイスク記録媒体。ただし一般式
におけるX、Yはそれぞれ 55重量%≦X≦80重量%、 0重量%≦Y≦20重量% であり、MはAu、Ag、Cu、Pd、Pt、Al、Si、
Ge、Ga、Sn、Te、SeおよびBiのうちから選ん
だ少くとも一種を表わす。 2 一般式 (In1-XSbX)1-YMY で表わされる組成の合金膜を記録層に有し、さら
に記録層上面にTeO2、V2O3、V3O5、TiO2、
SiO2などの酸化物又はMgF2、CeF3、AlF3など
の弗化物のうちから選んだ少くとも一種を保護膜
として積層したことを特徴とする光デイスク記録
媒体。ただし、一般式におけるX、Yはそれぞれ 55重量%≦X≦80重量%、 0重量%≦Y≦20重量% であり、MはAu、Ag、Cu、Pd、Pt、Al、Si、
Ge、Ga、Sn、Te、SeおよびBiのうちから選ん
だ少くとも一種を表わす。[Claims] 1. An optical disk recording medium characterized in that the recording layer has an alloy film having a composition represented by the general formula (In 1-X Sb X ) 1-Y MY . However, in the general formula, X and Y are respectively 55% by weight≦X≦80% by weight, 0% by weight≦Y≦20% by weight, and M is Au, Ag, Cu, Pd, Pt, Al, Si,
Represents at least one selected from Ge, Ga, Sn, Te, Se and Bi. 2 The recording layer has an alloy film having a composition represented by the general formula ( In 1 -X Sb ,
1. An optical disc recording medium characterized in that at least one kind selected from oxides such as SiO 2 or fluorides such as MgF 2 , CeF 3 and AlF 3 is laminated as a protective film. However, in the general formula, X and Y are respectively 55% by weight≦X≦80% by weight and 0% by weight≦Y≦20% by weight, and M is Au, Ag, Cu, Pd, Pt, Al, Si,
Represents at least one selected from Ge, Ga, Sn, Te, Se and Bi.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59031458A JPS60177446A (en) | 1984-02-23 | 1984-02-23 | Optical disk recording medium |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59031458A JPS60177446A (en) | 1984-02-23 | 1984-02-23 | Optical disk recording medium |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60177446A JPS60177446A (en) | 1985-09-11 |
JPH0352651B2 true JPH0352651B2 (en) | 1991-08-12 |
Family
ID=12331811
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59031458A Granted JPS60177446A (en) | 1984-02-23 | 1984-02-23 | Optical disk recording medium |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60177446A (en) |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0829616B2 (en) * | 1984-10-05 | 1996-03-27 | 株式会社日立製作所 | Information recording member |
JPS62181189A (en) * | 1985-08-09 | 1987-08-08 | Hitachi Ltd | Information-recording thin film and recording and reproduction of information |
EP0212336B1 (en) * | 1985-08-15 | 1990-11-28 | International Business Machines Corporation | A method of optical recording |
NL8503235A (en) * | 1985-11-25 | 1987-06-16 | Philips Nv | METHOD FOR THE OPTICAL REGISTRATION OF INFORMATION AND AN OPTICAL REGISTRATION ELEMENT APPLIED IN THE METHOD. |
JPS62183042A (en) * | 1986-02-06 | 1987-08-11 | Toshiba Corp | Information recording and reproducing method |
US4818666A (en) * | 1986-03-28 | 1989-04-04 | U.S. Philips Corporation | Erasable optical recording element and method of optically recording and erasing information |
JPS63155436A (en) * | 1986-12-19 | 1988-06-28 | Toshiba Corp | Information recording medium |
US4879205A (en) * | 1987-01-20 | 1989-11-07 | Kabushiki Kaisha Toshiba | Information storage medium and a method of manufacturing the same |
JPS63187430A (en) * | 1987-01-30 | 1988-08-03 | Toshiba Corp | Information recording medium |
CA1270640A (en) * | 1987-02-13 | 1990-06-26 | Kee-Chuan Pan | Recording elements comprising write-once thin film alloy layers |
US4960680A (en) * | 1987-02-13 | 1990-10-02 | Eastman Kodak Company | Recording elements comprising write-once thin film alloy layers |
JP2827201B2 (en) * | 1987-03-18 | 1998-11-25 | 東レ株式会社 | Optical recording medium |
JP2827202B2 (en) * | 1987-03-27 | 1998-11-25 | 東レ株式会社 | Optical recording medium |
JPS63251290A (en) * | 1987-04-08 | 1988-10-18 | Hitachi Ltd | Optical recording medium, method for regeneration and application thereof |
JP2713908B2 (en) * | 1987-06-05 | 1998-02-16 | 株式会社日立製作所 | Information storage medium |
JP2726259B2 (en) * | 1987-07-08 | 1998-03-11 | 旭化成工業株式会社 | Information recording method |
JPH01180387A (en) * | 1988-01-12 | 1989-07-18 | Toray Ind Inc | Information recording medium |
JPH021373A (en) * | 1988-03-18 | 1990-01-05 | Kuraray Co Ltd | Optical recording medium |
JPH01251340A (en) * | 1988-03-31 | 1989-10-06 | Toshiba Corp | Information recording medium |
JPH01258243A (en) * | 1988-04-08 | 1989-10-16 | Fujitsu Ltd | Interchange type rewritable optical disk |
US4981772A (en) * | 1988-08-09 | 1991-01-01 | Eastman Kodak Company | Optical recording materials comprising antimony-tin alloys including a third element |
EP0405225A3 (en) * | 1989-06-30 | 1992-02-26 | Kabushiki Kaisha Toshiba | Information storage medium |
WO1991005342A1 (en) * | 1989-09-28 | 1991-04-18 | Matsushita Electric Industrial Co., Ltd. | Optical data recording medium and method of producing the same |
US5196294A (en) * | 1990-09-17 | 1993-03-23 | Eastman Kodak Company | Erasable optical recording materials and methods based on tellurium alloys |
US6022605A (en) * | 1997-02-28 | 2000-02-08 | Kao Corporation | Optical recording medium and recording/erasing method therefor |
GB2336463B (en) | 1998-04-16 | 2000-07-05 | Ricoh Kk | Optical recording method for a rewritable phase-change optical recording medium |
JP2000339751A (en) | 1999-06-01 | 2000-12-08 | Ricoh Co Ltd | Phase-change type optical recording medium |
JP4145036B2 (en) | 2000-09-28 | 2008-09-03 | 株式会社リコー | Optical information recording medium |
CN1287362C (en) | 2002-02-13 | 2006-11-29 | 三菱化学媒体株式会社 | Rewritable optical recording medium and optical recording method |
DE60309232T2 (en) | 2002-03-05 | 2007-09-06 | Mitsubishi Kagaku Media Co. Ltd. | A phase change recording material for an information recording medium and an information recording medium using the same |
JP2004017394A (en) | 2002-06-14 | 2004-01-22 | Tdk Corp | Optical recording medium |
WO2004085168A1 (en) | 2003-03-24 | 2004-10-07 | Mitsubishi Chemical Corporation | Phase variation recording material and information recording medium |
EP1619037B1 (en) | 2003-04-30 | 2011-07-06 | Mitsubishi Kagaku Media Co., Ltd. | Phase-change recording material and information recording medium |
EP1685971A4 (en) * | 2003-10-16 | 2008-11-26 | Ricoh Kk | Phase transition type optical recording medium, process for producing the same, sputtering target, method of using optical recording medium and optical recording apparatus |
WO2005044578A1 (en) * | 2003-11-10 | 2005-05-19 | Ricoh Company, Ltd. | Optical recoding medium and its manufacturing method, sputtering target, usage of optical recording medium, and optical recorder |
JP2006044215A (en) * | 2003-11-10 | 2006-02-16 | Ricoh Co Ltd | Optical recording medium and its manufacturing method, sputtering target, usage for optical recording medium, and optical recording apparatus |
WO2005075212A1 (en) * | 2004-02-05 | 2005-08-18 | Ricoh Company, Ltd. | Phase-change information recording medium and process for producing the same, sputtering target, method for using phase-change information recording medium and optical recorder |
-
1984
- 1984-02-23 JP JP59031458A patent/JPS60177446A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS60177446A (en) | 1985-09-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPH0352651B2 (en) | ||
KR100746263B1 (en) | Optical information medium having separate recording layers | |
JP3011200B2 (en) | Optical recording medium | |
JPS62152786A (en) | Information-recording thin film | |
US6670013B2 (en) | Optical recording medium and use of such optical recording medium | |
JP2000505930A (en) | Optical recording medium having phase change recording layer | |
KR20020080423A (en) | Optical information medium and its use | |
JP2584741B2 (en) | Rewritable optical information recording member | |
JPS60179954A (en) | Recording medium for optical disk | |
JPH0475835B2 (en) | ||
JP3963781B2 (en) | Optical recording medium | |
JPH0465462B2 (en) | ||
JP2577349B2 (en) | Optical recording medium | |
JPH04226785A (en) | Optical information recording medium and information recording production method | |
Rubin | Material requirements for reversible phase change optical recording | |
US6278684B1 (en) | Optical information recording medium | |
JPS63244422A (en) | Information recording medium | |
JP2557347B2 (en) | Optical recording medium | |
KR100186525B1 (en) | Structure for phase change type optical disk | |
JPH02112987A (en) | Optical recording medium | |
JPS63167440A (en) | Method for recording or recording and erasing information | |
JPH0352652B2 (en) | ||
JPS616806A (en) | Optical disc recording medium | |
JPH01112538A (en) | Optical information recording medium | |
JP2903969B2 (en) | Optical recording medium and recording / reproducing method using the same |