JPS60130630U - Vapor phase growth equipment - Google Patents
Vapor phase growth equipmentInfo
- Publication number
- JPS60130630U JPS60130630U JP1826784U JP1826784U JPS60130630U JP S60130630 U JPS60130630 U JP S60130630U JP 1826784 U JP1826784 U JP 1826784U JP 1826784 U JP1826784 U JP 1826784U JP S60130630 U JPS60130630 U JP S60130630U
- Authority
- JP
- Japan
- Prior art keywords
- vapor phase
- phase growth
- growth equipment
- reaction chamber
- pel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図は、従来の縦型気相成長装置の反応室お、
よびガスの供給・排気配管系統図、第２図は本考案の一
実施例による縦型気相成長装置の反応室およびガスの供
給・排気配管系統図、第３図は他の実施例の配管系統図
、第４図はさらに他の実施例の配管系統図である。
１・・・・・・金属ペルジャー、２・・・・・・石英ペ
ルジャー、３・・・・・・加熱板、４・・・・・・半導
体基板（ウェハー）、５・・・・・・石英ノズル、６・
・・・・・加熱用コイル、７・・・・・・加熱用コイル
石英カバー、８・・・・・・石英ノズル、９・・・・・
・ガス送気配管、１０・・・・・・送気配管と分岐され
た配管、１１・・・・・・排気配管、１２・・・・・・
ガス流量計、１３・・・・・・ガス流量調整弁、１４・
・・・・・反応室ベース板、１５・・・・・・Ｏリング
、１６・・：・・・ガス冷却器、１７・・・・・・配管
内に取り付けられたファン、１８・・・・・・ガスの流
れ方向。Figure 1 shows the reaction chamber of a conventional vertical vapor phase growth apparatus.
Figure 2 is a system diagram of the reaction chamber and gas supply/exhaust piping of a vertical vapor growth apparatus according to one embodiment of the present invention, and Figure 3 is a diagram of the piping of another embodiment. System diagram, FIG. 4 is a piping system diagram of yet another embodiment. 1... Metal Pelger, 2... Quartz Pelger, 3... Heating plate, 4... Semiconductor substrate (wafer), 5... Quartz nozzle, 6.
... Heating coil, 7 ... Heating coil quartz cover, 8 ... Quartz nozzle, 9 ...
・Gas air supply piping, 10... Air supply piping and branched piping, 11... Exhaust piping, 12...
Gas flow meter, 13...Gas flow rate adjustment valve, 14.
... Reaction chamber base plate, 15 ... O-ring, 16 ... Gas cooler, 17 ... Fan installed in the piping, 18 ... ...Gas flow direction.
Claims (1)
いて、反応室を通過した一部あるいは全部のガスを反応
室内の金属ペルジャーと石英ペルジャーとの間に再度送
気することを特徴とする気相成長装置。In a vapor phase growth bag for depositing a thin film on a semiconductor wafer, a part or all of the gas that has passed through the reaction chamber is sent again between a metal Pel jar and a quartz Pel jar in the reaction chamber. growth equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1826784U JPS60130630U (en) | 1984-02-10 | 1984-02-10 | Vapor phase growth equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1826784U JPS60130630U (en) | 1984-02-10 | 1984-02-10 | Vapor phase growth equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60130630U true JPS60130630U (en) | 1985-09-02 |
Family
ID=30506740
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1826784U Pending JPS60130630U (en) | 1984-02-10 | 1984-02-10 | Vapor phase growth equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60130630U (en) |
-
1984
- 1984-02-10 JP JP1826784U patent/JPS60130630U/en active Pending
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