JPS60127294A - Device for modifying shape of beam - Google Patents
Device for modifying shape of beamInfo
- Publication number
- JPS60127294A JPS60127294A JP23552083A JP23552083A JPS60127294A JP S60127294 A JPS60127294 A JP S60127294A JP 23552083 A JP23552083 A JP 23552083A JP 23552083 A JP23552083 A JP 23552083A JP S60127294 A JPS60127294 A JP S60127294A
- Authority
- JP
- Japan
- Prior art keywords
- ray
- plane
- extraordinary
- ordinary
- polarization
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
- C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
この発明は、レーザビームを用いて、試料基板を加熱す
るレーザ加熱法に係わル、とくに単結晶膜形成用に適し
たレーザビームの形状を簡便に得ることができるビーム
形状成形器に関する。[Detailed Description of the Invention] The present invention relates to a laser heating method for heating a sample substrate using a laser beam, and it is possible to easily obtain a laser beam shape particularly suitable for forming a single crystal film. Relating to a beam shaper.
シリコンのイオン注入層のアニーリングから発展したレ
ーザビームを用いた単結晶膜形成法は、3次元構造集積
回路や表示素子用集積回路などへの応用が期待されるた
め、サファイヤないしは非晶質絶縁膜上の多結晶ないし
は、アモルファスシ(1)
リコンの単結晶化、すなわち5os(s目1conon
8apphire )、80 I (5ilicon
onInsul’ator )などのプロセス技術と
して、盛んに研究されるようになってきた。The single-crystal film formation method using a laser beam, developed from the annealing of silicon ion-implanted layers, is expected to be applied to three-dimensional integrated circuits and display device integrated circuits. The above polycrystalline or amorphous (1) single crystallization of licon, i.e. 5os (s 1 conon
8apphire), 80I (5ilicon
It has been actively researched as a process technology such as oninsul'ator.
しかし、このよう表単結晶膜形成においては、従来は、
結晶成長の核を制御することが困難でありたために、粒
状の大きな結晶粒を得ることかできないでいた。その理
由は、通常用いられるレーザビームの形状が円形で、か
つその強度分布が中心はど強くなるガウス分布になって
いるため、レーザビームの照射により一旦溶融した試料
が固化するとき、被照射領域の中央の方がその周辺より
も固化が遅れてしまい、被照射領域の周辺に発生した多
数の微結晶核がそれぞれ脈絡なく勝手に成長してしまう
ためである0
この対策として、従来とは異った形状を有するレーザビ
ームを用いることが考えられ、レーザビご
一ムを複屈折板に透過させるえとにより、常光線と異常
光線に2分割して、レーザビームの断面形状が双峰型の
レーザビームを用いることにより、(2)
被照射領域の中央部では、被照射量が小さいため、その
近傍にくらべ冷却固化がはやく生じ、この同化に伴い、
中央部か情辺部に向けて結晶成長が進行するようにガる
ため、大きな結晶粒が得られるようになった。However, in the formation of such a surface single crystal film, conventionally,
Because it was difficult to control the nuclei of crystal growth, it was only possible to obtain large crystal grains. The reason for this is that the normally used laser beam has a circular shape and its intensity distribution is a Gaussian distribution that is stronger at the center. This is because solidification is delayed in the center of the area compared to the surrounding area, and many microcrystalline nuclei generated around the irradiated area grow independently without any context. It is possible to use a laser beam with a bimodal cross-sectional shape by dividing the laser beam into two, an ordinary ray and an extraordinary ray, by transmitting the laser beam through a birefringent plate. By using a beam, (2) Since the irradiation dose is small in the central part of the irradiated area, cooling and solidification occur more quickly than in the vicinity, and as a result of this assimilation,
Large crystal grains can now be obtained because the crystal growth progresses toward the center or edge.
しかし、この双峰型のレーザビームを用いることは、下
記のような欠点を有していた。すなわち、常光線と異常
光線では偏光面が90°違かうため、それぞれの電界の
振動方向が90°ずれている。これにより常光線で得ら
れた結晶粒の結晶性と異常光線で得られた結晶粒の結晶
性とが異なり、大きな結晶粒の中で結晶性が不均一にな
るという問題があった。However, using this bimodal laser beam has the following drawbacks. That is, since the polarization planes of the ordinary ray and the extraordinary ray differ by 90 degrees, the vibration directions of their respective electric fields are shifted by 90 degrees. As a result, the crystallinity of crystal grains obtained with ordinary light is different from the crystallinity of crystal grains obtained with extraordinary light, resulting in a problem that crystallinity becomes non-uniform within large crystal grains.
この発明の目的は、上述の欠点を除去し、結晶粒の大き
な良質の単結晶膜を得ることができるビーム形状成形器
を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a beam shaper that can eliminate the above-mentioned drawbacks and produce a high-quality single crystal film with large crystal grains.
この発明のビーム形状成形器は、光ビームを常光線と異
常光線とに2分割する複屈折板の出射側に、前記常光線
と前記異常光線のどちらか一方の偏光面の向きを90°
変える素子を備えた構成とな(3)
っている。In the beam shape shaper of the present invention, the direction of the plane of polarization of either the ordinary ray or the extraordinary ray is set at 90° on the exit side of the birefringent plate that divides the light beam into two, an ordinary ray and an extraordinary ray.
(3)
次に図面を用いて、本発明の詳細な説明する。Next, the present invention will be explained in detail using the drawings.
図は本発明の一実施例を示す図である。図において、レ
ーザビーム1が複屈折板2を透過し、常光線3と異常光
線4に分割される。この常光線3は紙面に垂直に振動す
る電界を有する直線偏光であシ、この異常光線4は紙面
に平行に振動する電界を有する直線偏光である。すなわ
ち、この常光線3の偏光面と、異常光線4の偏光面とが
90°違っている。そこで、異常光線4を1/2波長板
5に透過させることによシ(もちろん、異常光線4では
なく常光線3を1A波長板5に透過させて用いてもよい
)、異常光線4に180°の位相差を与え、異常光線4
の偏光面を90°変えて、常光線3と同じく、紙面に垂
直に振動する電界を有する直線偏光線6に変換させる。The figure shows an embodiment of the present invention. In the figure, a laser beam 1 passes through a birefringent plate 2 and is split into an ordinary ray 3 and an extraordinary ray 4. This ordinary ray 3 is linearly polarized light having an electric field vibrating perpendicular to the plane of the paper, and this extraordinary ray 4 is linearly polarized light having an electric field vibrating parallel to the plane of the paper. That is, the polarization plane of the ordinary ray 3 and the polarization plane of the extraordinary ray 4 differ by 90°. Therefore, by transmitting the extraordinary ray 4 through the 1/2 wavelength plate 5 (of course, the ordinary ray 3 may be used instead of the extraordinary ray 4 by transmitting it through the 1A wavelength plate 5), the extraordinary ray 4 is gives a phase difference of 4° and the extraordinary ray 4
The plane of polarization is changed by 90 degrees to convert it into a linearly polarized light ray 6 that has an electric field that oscillates perpendicular to the plane of the paper, similar to the ordinary ray 3.
この事によシ、同じ偏光面を有する常光線3と上述の直
線偏光線6とが得られ、またビーム断面形状は双峰型と
なる。As a result, the ordinary ray 3 and the above-mentioned linearly polarized ray 6 having the same plane of polarization are obtained, and the cross-sectional shape of the beam becomes bimodal.
この実施例の中で偏光面の向きを90°変える素子とし
て1/2波長板を用いたが、これに限らず偏(4)
光面全90°変えられる素子でやれば良く、例えば電気
光学結晶を用いて、外から加える電界で調整しても良い
0
この発明を用いて形成されたレーザビームをシそのポリ
シリコン膜の単結晶化を試みたところ、波長515nm
、照射パワー10W、走査速度8tM/秒のとき、幅2
00μm1長さ1 mm の均一な結晶性を有するシリ
コン単結晶膜が形成できた。なお、このポリシリコン膜
の表面には、通常よくなされているように、あらかじめ
厚さ115−0n程度の8isN4膜と、厚さ1μm程
度のリン酸シリケイトガラス膜とからなる保護層を設け
、また該ポリシリコン膜と該基板との間には、厚さ60
0 nm程度の5i02からなる絶縁膜層を設けておい
た。In this example, a 1/2 wavelength plate was used as an element that changes the direction of the polarization plane by 90 degrees, but it is not limited to this, and any element that can change the polarization plane by 90 degrees may be used.For example, an electro-optic plate can be used. It is also possible to use a crystal and adjust it by an externally applied electric field. When we tried to make a single crystal of a polysilicon film using a laser beam formed using this invention, we found that the wavelength was 515 nm.
, when the irradiation power is 10 W and the scanning speed is 8 tM/s, the width is 2.
A silicon single crystal film having uniform crystallinity of 00 μm and 1 mm in length was formed. Note that on the surface of this polysilicon film, a protective layer consisting of an 8isN4 film with a thickness of about 115-0 nm and a phosphosilicate glass film with a thickness of about 1 μm was provided in advance, as is usually done. There is a thickness of 60 mm between the polysilicon film and the substrate.
An insulating film layer made of 5i02 with a thickness of about 0 nm was provided.
以上述べたごとく、この発明によれば、結晶粒の大きな
良質の単結晶膜などを形成するのに適したレーザビーム
を簡便に形成することができる〇As described above, according to the present invention, it is possible to easily form a laser beam suitable for forming high-quality single crystal films with large crystal grains.
図は、本発明の一実施例を示す図である0図中、1はレ
ーザビーム、2は複屈折板、3は常光線、′4は異常光
線、5は1/2波長板、6は直線偏光を有した光線であ
る0The figure shows an embodiment of the present invention. In the figure, 1 is a laser beam, 2 is a birefringent plate, 3 is an ordinary ray, 4 is an extraordinary ray, 5 is a half-wave plate, and 6 is a 0, which is a ray of light with linear polarization
Claims (1)
出射側に、前記常光線と前記異常光線のどちらか一方の
偏光面の向き’i90’変える素子を備えたことを特徴
とするビーム形状成形器。The device is characterized in that an element for changing the direction of the plane of polarization of either the ordinary ray or the extraordinary ray by 'i90' is provided on the output side of the birefringent plate that splits the light beam into two, an ordinary ray and an extraordinary ray. Beam shape former.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23552083A JPS60127294A (en) | 1983-12-14 | 1983-12-14 | Device for modifying shape of beam |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23552083A JPS60127294A (en) | 1983-12-14 | 1983-12-14 | Device for modifying shape of beam |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS60127294A true JPS60127294A (en) | 1985-07-06 |
Family
ID=16987191
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23552083A Pending JPS60127294A (en) | 1983-12-14 | 1983-12-14 | Device for modifying shape of beam |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60127294A (en) |
-
1983
- 1983-12-14 JP JP23552083A patent/JPS60127294A/en active Pending
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