JPS60126873A - Optical coupling semiconductor device - Google Patents
Optical coupling semiconductor deviceInfo
- Publication number
- JPS60126873A JPS60126873A JP58233587A JP23358783A JPS60126873A JP S60126873 A JPS60126873 A JP S60126873A JP 58233587 A JP58233587 A JP 58233587A JP 23358783 A JP23358783 A JP 23358783A JP S60126873 A JPS60126873 A JP S60126873A
- Authority
- JP
- Japan
- Prior art keywords
- light
- emitting element
- receiving element
- insulating substrate
- receiving
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 7
- 239000004065 semiconductor Substances 0.000 title claims description 17
- 230000008878 coupling Effects 0.000 title claims description 3
- 238000010168 coupling process Methods 0.000 title claims description 3
- 238000005859 coupling reaction Methods 0.000 title claims description 3
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 239000010409 thin film Substances 0.000 claims abstract description 9
- 206010034972 Photosensitivity reaction Diseases 0.000 claims description 3
- 230000036211 photosensitivity Effects 0.000 claims description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims 1
- 230000005540 biological transmission Effects 0.000 abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 2
- 229920005989 resin Polymers 0.000 abstract description 2
- 239000011347 resin Substances 0.000 abstract description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- 239000010703 silicon Substances 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000007257 malfunction Effects 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 238000003491 array Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 206010034960 Photophobia Diseases 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 208000013469 light sensitivity Diseases 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000088 plastic resin Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4295—Coupling light guides with opto-electronic elements coupling with semiconductor devices activated by light through the light guide, e.g. thyristors, phototransistors
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
- G02B6/4236—Fixing or mounting methods of the aligned elements
- G02B6/4245—Mounting of the opto-electronic elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4274—Electrical aspects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4256—Details of housings
- G02B6/4257—Details of housings having a supporting carrier or a mounting substrate or a mounting plate
- G02B6/4259—Details of housings having a supporting carrier or a mounting substrate or a mounting plate of the transparent type
Abstract
Description
【発明の詳細な説明】
〔発明の属する技術分野〕
この発明は発光−素子と受光素子の受光面が対向され、
前記発光素子の光信号によって受光素子を駆動すること
のできる光結合半導体装置に関する。[Detailed description of the invention] [Technical field to which the invention pertains] This invention provides a light-emitting element and a light-receiving element in which the light-receiving surfaces of the light-emitting element and the light-receiving element face each other,
The present invention relates to an optically coupled semiconductor device capable of driving a light receiving element using an optical signal from the light emitting element.
最近、新しい固体素子として半導体発光素子と受光素子
が光学的に且つ一体的に結合した光結合半導体装置（以
下、フォトカブラと呼ぶ）が注目されており、固体リレ
ーや伝送線のアイソレーションなどに広く使用されてい
る。Recently, an optically coupled semiconductor device (hereinafter referred to as a photocoupler), in which a semiconductor light emitting element and a light receiving element are optically and integrally coupled, has been attracting attention as a new solid-state device, and is used for solid-state relays, transmission line isolation, etc. Widely used.
特にフォトカブラを同−基、板上に複数個並設したフォ
トカブラアレイやフォトカプラと集積回路とを組み合わ
せた回路装置などに論理回路又は通話回路に極めて有効
に使用されている。In particular, it is extremely effectively used in logic circuits or communication circuits, such as photocoupler arrays in which a plurality of photocouplers are arranged side by side on the same board, and circuit devices that combine photocouplers and integrated circuits.
このフォトカブラを製造するに当って次の問題点を解決
する事が重要となる。In manufacturing this photocoupler, it is important to solve the following problems.
（１）発光素子と受光素子間の距離を２００μｍ以上離
して両者間の絶縁耐圧を大きくする。(1) The distance between the light emitting element and the light receiving element is increased by 200 μm or more to increase the dielectric strength between them.
（２）複数の受光感度領域において一方の光信号が他方
の受光感度領域に影響を与えて誤動作をさせないこと。(2) In a plurality of light-receiving sensitivity regions, one optical signal should not affect the other light-receiving sensitivity region and cause malfunction.
（３）発光素子と受光素子間の光伝達効率が高いこと。(3) High light transmission efficiency between the light emitting element and the light receiving element.
従来この種のフォトカプラは、例えば発光素子と受光素
子とをそれぞれの発光面及び受光面が存在する面を相対
向して配置し、両面間に透光性の樹脂或いはガラスを介
在させた構造となっている。Conventionally, this type of photocoupler has a structure in which, for example, a light-emitting element and a light-receiving element are arranged with their respective light-emitting and light-receiving surfaces facing each other, with a translucent resin or glass interposed between both surfaces. It becomes.
この構造のフォトカブラーは、発光素子からの光が受光
素子の光感度領域だけでなく、それ以外の領域にも照射
される為、他の受光素子の光感度領域にも影響を与える
ため誤動作の原因となる。A photocoupler with this structure is susceptible to malfunction because the light from the light-emitting element is irradiated not only to the light-sensitive area of the light-receiving element but also to other areas, affecting the light-sensitivity areas of other light-receiving elements. Cause.
したがってフォトカプラアレイやフォトカブラ付集積回
路を製作するに当って集積密度を高くする一つの弊害と
なっていた。Therefore, this has been one of the disadvantages of increasing the integration density when manufacturing photocoupler arrays and integrated circuits with photocouplers.
さらに発光素子の照射光風の半分以上が外部へ洩れるた
め、光結合効率が低いという欠点があった。Furthermore, since more than half of the light emitted from the light emitting element leaks to the outside, there is a drawback that the optical coupling efficiency is low.
したがってこれらの欠点がフォトカプラの量産歩留りを
低下させる最大の原因になっていた。Therefore, these drawbacks have been the biggest cause of lowering the mass production yield of photocouplers.
この発明は上述した従来技術の欠点を改良したもので、
信頼性が高くかつ歩留りよく量産することのできる光結
合半導体装置を提供することを目的とする。This invention improves the drawbacks of the prior art described above.
It is an object of the present invention to provide an optically coupled semiconductor device that has high reliability and can be mass-produced with high yield.
この目的を達成するため、本発明の特徴とするところは
、発光素子と受光素子の間に絶縁基板を備え、この絶縁
基板に光を透過する領域と光を遮断する領域を設け、か
つ光を透過する領域に設けた発光素子を覆うように放物
面を持った反射板を具備した点にある。In order to achieve this object, the present invention is characterized in that an insulating substrate is provided between a light emitting element and a light receiving element, and a region that transmits light and a region that blocks light are provided on this insulating substrate. The feature is that a reflecting plate having a parabolic surface is provided so as to cover a light emitting element provided in a transmitting region.
以下実施例について本発明を詳述する。第１図（３１〜
（ｄ）は本発明の一実施例による２つの光感度領域をも
ったフォトカプラの製造工程を示す。The present invention will be described in detail with reference to Examples below. Figure 1 (31~
(d) shows the manufacturing process of a photocoupler with two photosensitivity regions according to an embodiment of the present invention.
第１図（、）に示すようにシリコン基板の表面の一部分
に拡散法などにより形成されたＰＮ接合を含む受光領域
（２）を備えた受光素子（１）を用意する。As shown in FIG. 1(,), a light-receiving element (1) is prepared which includes a light-receiving region (2) including a PN junction formed on a portion of the surface of a silicon substrate by a diffusion method or the like.
次に同図（ｂ）に示した透光性絶縁基板（３））よ、た
とえば厚さ２５０μｍのガラス板を使用して、一方の面
に発光素子（以下ＬＥＤと呼ぶ）の波長の光を遮断する
フィルター機能をもった薄膜（４）を、他方の面には同
じように光を遮断すると同時に導電性の薄膜（５）を形
成し、両面マスクアライナ−等を使って受光素子の受光
領域に対応してほぼ・等しｌ、Ｘ開口部をエツチングに
よって形成する。Next, use the light-transmitting insulating substrate (3) shown in Figure (b), for example, using a glass plate with a thickness of 250 μm, and light at the wavelength of a light emitting element (hereinafter referred to as LED) on one surface. A thin film (4) with a filter function to block light is formed on the other side, and a conductive thin film (5) is formed on the other side, and the light-receiving area of the light-receiving element is An opening approximately equal to 1 and X corresponding to 1 and 2 is formed by etching.
この導電性薄膜は、同時にそれぞれのＬＥＤを取１ノ付
けるための電極や電極取り出し用のボンデングバット等
の配線も同一工程で形成することカーできる。With this conductive thin film, electrodes for attaching each LED and wires such as bonding butts for taking out the electrodes can be formed in the same process.
この絶縁基板は受光素子（１）と同じサイズの形状でブ
レードカッターによって切断され、同図（ｂｌ＝おいて
、受光素子（１）の上に絶縁基板（３）を精度よく固着
したものである。This insulating substrate was cut with a blade cutter to the same size as the photodetector (1), and the insulating substrate (3) was precisely fixed on top of the photodetector (1) as shown in the same figure (bl=). .
？
次に同図（ｅ）は、絶縁基板（３）の受光部の真上ζ：
ＬＢＤ（６）を積層し、たとえば銀ペースト等ζ：よっ
て電気的に固着し、もう一方の電極はボンデング線（７
）ζ：よってＬＥＤ （６）と電極（５）を接続する。? Next, in the same figure (e), ζ is directly above the light receiving part of the insulating substrate (3):
The LBD (6) is laminated, for example with silver paste, etc., so that it is electrically fixed, and the other electrode is a bonding wire (7).
)ζ: Therefore, the LED (6) and the electrode (5) are connected.
さらに同図（ｄ＞に示すようにＬＥＤ （６）を覆うよ
うにプラスチック樹脂に放物面を形成し、その内部を鏡
面仕上げのメッキを施した反射板（８）は透明なシリコ
ン樹脂等によって固着することによって製作することが
できる。Furthermore, as shown in the same figure (d), a paraboloid is formed in plastic resin to cover the LED (6), and the reflective plate (8) whose interior is plated with a mirror finish is made of transparent silicone resin or the like. It can be manufactured by fixing.
第２図は上記実施例の平面図である。FIG. 2 is a plan view of the above embodiment.
同図中（９）は絶縁板（３）に設けた開口部で、あらか
じめエツチングや超音波加工等によってガラス板をくり
ぬき、その位置は受光素子の電極取り出し用のボンデン
グバットと対応するようＣ二しである。In the same figure, (9) is an opening provided in the insulating plate (3).The glass plate is hollowed out by etching or ultrasonic processing in advance, and the opening is positioned so that it corresponds to the bonding butt for taking out the electrode of the photodetector. It's second.
したがって絶縁板（３）を受光素子の上に積層固着した
後開口部の下に露出している受光素子のボンデングパッ
トと、外部電極取り出し端子ヘボンデング線（１０及び
００ｉによって電気的に接続する。又同じように発゛光
４−ｊ子・・１側：、）まｔ、絶縁板（３）の上に設け
たＬＥＤのボンデングパット（５） 、 ｆ５）と外部
電極取り出し端子ヘポンデング線（１１）及び０６Ｃ二
よって電気的Ｃ二接続する。Therefore, after the insulating plate (3) is laminated and fixed on the light-receiving element, the bonding pad of the light-receiving element exposed under the opening is electrically connected to the external electrode lead-out terminals by bonding wires (10 and 00i). Also, in the same way, connect the LED bonding pad (5), f5) provided on the insulating plate (3) and the bonding wire (to the external electrode extraction terminal) on the light emitting device 4-j...1 side: ). 11) and 06C2 to electrically connect C2.
上記第１図（ａ）〜（ｄ）で示した製作順とは別に、初
めに透光性絶縁板（３）の上に発光素子（６）並びに反
射板（８）をそれぞれ組み立てたものを受光素子（１）
の上に積層固着しても構造はまったく同じで同一の効果
が得られた。Apart from the manufacturing order shown in Figures 1 (a) to (d) above, first the light emitting element (6) and the reflecting plate (8) were assembled on the transparent insulating plate (3). Light receiving element (1)
The structure was exactly the same and the same effect was obtained even if it was laminated and fixed on top.
上記実施例におい”Ｃ１２つのＰＮ接合をもった受光素
子と発光素子を組み合わせたフォトカプラについて説明
を行なったが、ホトダイオードホトトランジスタ、 Ｍ
ｏｓ 、サイリスタ、 ＧＴＯ等とこれらを組み合わせ
た複合形の光結合半導体装置であっても本技術の筒中で
あることは当然である。In the above embodiment, a photocoupler combining a light-receiving element and a light-emitting element having two PN junctions was explained, but photodiodes, phototransistors, M
It goes without saying that a composite optically coupled semiconductor device that combines an OS, a thyristor, a GTO, etc., is also within the scope of the present technology.
本発明によれば次のような優れた効果が得られる。 According to the present invention, the following excellent effects can be obtained.
（１） 発光素子と受光感度領域とが光学的に十分密に
結合されるため、光伝達効率が高い。(1) The light transmission efficiency is high because the light emitting element and the light receiving sensitive region are optically coupled sufficiently tightly.
（２）透光性絶縁板の一部に設けた光を遮断する領域に
よって一方の光信号によって他方の受光感度領域で形成
される受光素子の誤動作の発生が防止される。(2) The light-blocking region provided in a part of the light-transmitting insulating plate prevents one optical signal from causing the light-receiving element formed in the other light-receiving sensitivity region to malfunction.
（３）集積度が高くでき、量産性が良い。(3) High degree of integration and good mass production.
＄１図（ａ）〜（ｄ）は本発明の一実施例によるフォト
カブラの製法を示す断面図、第２図は上記実施例の平面
図である。
１・・・受光素子本体、
２・・・光感度領域、
：３・・・透光性絶縁板、
４・・・光を遮断する薄膜、
５・・・導電性薄膜、
６・・・発光素子、
７・・・ボンデング線、
８・・・反射板、
９・・・透光性絶縁板に設けた一部開口部。
代理人 弁理士 則 近 憲 佑（ほか１名）第１図
２゛
第２図$1 Figures (a) to (d) are sectional views showing a method of manufacturing a photocoupler according to an embodiment of the present invention, and Figure 2 is a plan view of the above embodiment. DESCRIPTION OF SYMBOLS 1... Light-receiving element main body, 2... Photosensitive area, : 3... Translucent insulating plate, 4... Thin film that blocks light, 5... Conductive thin film, 6... Light emission Element, 7... Bonding wire, 8... Reflection plate, 9... Partial opening provided in the translucent insulating plate. Agent Patent Attorney Noriyuki Chika (and 1 other person) Figure 1 2゛Figure 2
Claims (3)
子と、半導体受光素子の上に積層された透光性絶縁基板
と、この透光性絶縁基板の上に前記半導□体受光素子に
対向して配置された半導体発光素子とから構成された光
結合半導体装置において、前記透光性絶縁基板の受光素
子側の面に光感度領域以外の領域に発光素子ａ波長の光
を遮断する薄膜を形成し、発光素子側の面には、光を遮
断すると同時に導電性を有する薄膜を形成した事を特徴
とする光結合半導体装置。(1) A semiconductor light-receiving element having a photosensitivity region on a part of its surface, a light-transmitting insulating substrate laminated on the semiconductor light-receiving element, and a semiconductor light-receiving element on the light-transmitting insulating substrate. In an optically coupled semiconductor device comprising a semiconductor light-emitting element and a semiconductor light-emitting element arranged opposite to each other, a surface of the light-transmitting insulating substrate on the light-receiving element side blocks light of wavelength a of the light-emitting element to a region other than the photosensitivity region. 1. A photocoupled semiconductor device characterized in that a thin film is formed, and a thin film that blocks light and is electrically conductive is formed on a surface facing a light emitting element.
に放物面形状を有した反射板を具備したことを特徴とす
る特許請求の範囲第１項記載の光結合半導体装置。(2) The optically coupled semiconductor device according to claim 1, further comprising a parabolic reflecting plate disposed on a transparent insulating substrate so as to cover the semiconductor light emitting element.
光素子の電極リード線をこの開口部から外部端子に接続
した事を特徴とする特許請求の範囲第１項記載の光結合
半導体装置。(3) Optical coupling according to claim 1, characterized in that an opening is provided in a part of the light-transmitting insulating substrate, and the electrode lead wire of the semiconductor light-receiving element is connected to the external terminal through the opening. Semiconductor equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58233587A JPS60126873A (en) | 1983-12-13 | 1983-12-13 | Optical coupling semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58233587A JPS60126873A (en) | 1983-12-13 | 1983-12-13 | Optical coupling semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60126873A true JPS60126873A (en) | 1985-07-06 |
Family
ID=16957406
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58233587A Pending JPS60126873A (en) | 1983-12-13 | 1983-12-13 | Optical coupling semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60126873A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6880981B2 (en) * | 2001-05-31 | 2005-04-19 | Sharp Kabushiki Kaisha | Optical coupling apparatus and method for manufacturing the same |
| WO2008117800A1 (en) * | 2007-03-26 | 2008-10-02 | Rintaro Nishina | Reflective optical sensor |
-
1983
- 1983-12-13 JP JP58233587A patent/JPS60126873A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6880981B2 (en) * | 2001-05-31 | 2005-04-19 | Sharp Kabushiki Kaisha | Optical coupling apparatus and method for manufacturing the same |
| WO2008117800A1 (en) * | 2007-03-26 | 2008-10-02 | Rintaro Nishina | Reflective optical sensor |
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