JPS60122945A - Photomask processing end point detecting device - Google Patents

Photomask processing end point detecting device

Info

Publication number
JPS60122945A
JPS60122945A JP58229913A JP22991383A JPS60122945A JP S60122945 A JPS60122945 A JP S60122945A JP 58229913 A JP58229913 A JP 58229913A JP 22991383 A JP22991383 A JP 22991383A JP S60122945 A JPS60122945 A JP S60122945A
Authority
JP
Japan
Prior art keywords
photomask
light
end point
processing
detecting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58229913A
Other languages
Japanese (ja)
Inventor
Takao Kawanabe
川那部 隆夫
Shigeto Kumada
熊田 成人
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58229913A priority Critical patent/JPS60122945A/en
Publication of JPS60122945A publication Critical patent/JPS60122945A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68Preparation processes not covered by groups G03F1/20 - G03F1/50
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To raise a detection accuracy of a photomask processing end point by irrdiating a detecting light of a projector to a reflecting object buried in a sample placing base, detecting a transmittivity of a photomask of a reflected light, and controlling the photomask processing basing on this detected value. CONSTITUTION:A photomask is placed on a transparent sample placing base 10, a treating liquid is dropped from a drop nozzle 6, and the placing base is rotated. When etching of a chrome film 9 advances, and the chrome film 9 is eliminated from on the surface of the photomask, a detecting light 14 transmits through the photomask, and reaches a reflecting object in the sample placing base. A reflected light 30 reflected by the reflecting object transmits through the photomask again and reaches a photodetector 5. The photodetector 5 detects an optical transmittivity of the photomask and converts it to an electric signal, etc. This electric signal is connected with a processing time setting part 21 through an optical transmittivity detecting part 20. Information of this processing time is connected with a processing control part 22, this control command is connected with a driving control part 23 and a treating liquid supply part 24, and the processing end point is detected with a high accuracy.

Description

【発明の詳細な説明】 〔技術分野〕 本発明は、ホトマスク処理特にエツチング用終点検出装
置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to an end point detection apparatus for photomask processing, particularly etching.

〔背景技術〕[Background technology]

半導体装置の製造工sにおいて、ホトマスクにパターン
を形成する1糧がある。すなわち、このホトマスクの表
面にエツチング液を滴下し、該ホトマスクの載置台の回
転に伴いエツチング液線、ホトマスクの表面全体に広が
木。例えばこのエツチング液によりクロム膜がレジスト
膜で被膜された部分を残して腐蝕され、ホトマスクに所
望のパターンが形成されることになる。
In the manufacturing process of semiconductor devices, one method is to form a pattern on a photomask. That is, an etching liquid is dropped onto the surface of the photomask, and as the photomask mounting table rotates, lines of etching liquid spread across the entire surface of the photomask. For example, the etching solution erodes the chromium film leaving behind the portions covered with the resist film, thereby forming a desired pattern on the photomask.

このような装置において、エツチングの進行状況を観察
し、エツチングの終At正確に判定することが必要とな
る。
In such an apparatus, it is necessary to observe the progress of etching and accurately determine the end of etching.

目視観察による終点検出、又は終点を自動的に判定する
装置として、例えば第1図に示すような終点検出装置が
提案されている。
As a device for detecting the end point by visual observation or automatically determining the end point, for example, an end point detection device as shown in FIG. 1 has been proposed.

この終点検出装置は、ホトマスク10の下方に投光器4
と該ホトマスク10の上方に受光器5とを設け、第2図
及びwcB図に示す如くホトマスクの外周部13に設け
た検出用パターン11に検出光14を照射し、その検出
光の透過率を検出することKより終点な判定するように
構成されている。
This end point detection device includes a light projector 4 located below the photomask 10.
and a light receiver 5 are provided above the photomask 10, and the detection pattern 11 provided on the outer circumference 13 of the photomask is irradiated with detection light 14 as shown in FIG. 2 and wcB, and the transmittance of the detection light is measured. It is configured to determine that the detected point is the end point.

すなわ゛ち、ホトマスク10上のクロム膜9に終点を判
定する検出用パターンを前もつ【露光して設けておき、
その検出用ノミターンに向けて検出光13を照射し、該
クロム!119上のホトレジスト8が工ツチングされて
くると検出光はホトマスクな透過−5−るようになって
光透過率が上昇する。この光透過率?モニタして、例え
ばその透過率の急上昇を知ることにより、終点な判定す
ることができる。
In other words, the chromium film 9 on the photomask 10 has a detection pattern for determining the end point [prepared by exposure].
The detection light 13 is irradiated toward the detection chisel turn, and the chromium! When the photoresist 8 on the photoresist 119 is etched, the detection light comes to be transmitted through the photomask, and the light transmittance increases. This light transmittance? By monitoring and noting, for example, a sudden increase in the transmittance, it is possible to determine the end point.

しかしながら、このような終点検出装置にあっては、第
3図に示すように、検出用パターン11なぁ)らかしめ
設けることが必要で、例えば10ツl毎に露光して設け
るのに時間な多く費していた。
However, in such an end point detection device, as shown in FIG. 3, it is necessary to provide a detection pattern 11), and it takes a lot of time to expose and provide it, for example, every 10 liters. was spending.

また、ホトマスク上に検出用パターンを設けるのである
か載置台が回転するなかで光透過率な計るので、検出−
3t、14が載置台に衝突したりして乱反射する現象が
生じる。この散乱光が受光器5に入射して受光器におい
てノズルとなり、このため、終点判定の精度が悪くなる
という欠点を有している。
In addition, since the detection pattern is provided on the photomask and the light transmittance is measured while the mounting table rotates, the detection
3t and 14 collide with the mounting table, causing a phenomenon of diffuse reflection. This scattered light enters the light receiver 5 and becomes a nozzle in the light receiver, resulting in a disadvantage that the accuracy of end point determination deteriorates.

〔発明の目的〕[Purpose of the invention]

本発明の目的は、終点判定の不精度を解消し、終点な正
確に判定することができるホトマスク処理終点検出装置
な提供することにある。
SUMMARY OF THE INVENTION An object of the present invention is to provide a photomask processing end point detection device that can eliminate inaccuracies in end point determination and accurately determine the end point.

本発明の前記ならびにそのほかの目的と新規な特徴は、
本明細書の記述および添付図面からあきらかになるであ
ろう。
The above and other objects and novel features of the present invention include:
It will become clear from the description of this specification and the accompanying drawings.

〔発明の概要〕[Summary of the invention]

本願において開示される発明のうち代表的なものの概要
を簡単に説F!8Jj′れば、下記の通りである。
A brief overview of typical inventions disclosed in this application F! 8Jj′ is as follows.

丁なわち、試料載置台の上方に投受光器な設け、投光器
の検出光な該試料載置台内に埋設した反射物体に照射(
2、当該反射光のホトマスクの透過率な検出し、この検
出値をもとにホトマスク処理を制御することができるも
のである。
In other words, a light emitter/receiver is installed above the sample mounting table, and the detection light of the projector is irradiated onto a reflecting object buried within the sample mounting table (
2. The transmittance of the reflected light through the photomask is detected, and the photomask processing can be controlled based on this detected value.

〔実施例〕〔Example〕

以下、本発明の一実施例を図面な用いて説明す□ る。 An embodiment of the present invention will be described below with reference to the drawings.

第4図は、本発明によるホトマスク処理終点検出装置の
一実施例で1及び15はホトマスク処理槽を構成し、蓋
体15は検出光14が通過するため透明となっている。
FIG. 4 shows an embodiment of the photomask processing end point detecting device according to the present invention. Reference numerals 1 and 15 constitute a photomask processing tank, and the lid 15 is transparent because the detection light 14 passes therethrough.

該処理槽内には、試料載置台が設けられ、該載置台は回
転軸2により回転されるようになっている。回転軸2は
底壁を貫通して駆動体3に連結されている。該載置台と
蓋体の間には処理液な滴下する滴下ノズル6があり、処
理液供給部17に連結し、処理槽の底部には排液ロアが
処理液を槽外に排出し得るように開設されている。試料
載置台の上方であって槽外に投受光器16が設けられて
いる。投光器4はレーザ等適当な光線からなる検出光1
4をホトマスクのはぼ中央部に向けて照射するようにな
っている。試料載置台内のほぼ中央部に投光器の光線を
受光器5に反射するような角度で反射物体(コーナキュ
ーブ)な埋設している。受光器5は、例えばセンサ等か
らなり、ホトマスクを透過する受光量←光透過率)に応
じた検査値を電気信号等に変換し、制御機構20〜24
に連絡するようになっている。
A sample mounting table is provided inside the processing tank, and the mounting table is rotated by a rotating shaft 2. The rotating shaft 2 passes through the bottom wall and is connected to the drive body 3. There is a dripping nozzle 6 for dripping the processing liquid between the mounting table and the lid, which is connected to the processing liquid supply section 17, and a drain lower at the bottom of the processing tank so that the processing liquid can be discharged to the outside of the tank. It was opened in . A light emitter/receiver 16 is provided above the sample mounting table and outside the tank. A light projector 4 emits detection light 1 consisting of a suitable light beam such as a laser.
4 is irradiated toward the center of the photomask. A reflective object (corner cube) is buried approximately in the center of the sample mounting table at an angle that reflects the light beam from the projector to the receiver 5. The light receiver 5 is composed of, for example, a sensor, and converts an inspection value corresponding to the amount of light transmitted through the photomask (light transmittance) into an electrical signal, etc., and controls the control mechanisms 20 to 24.
I am supposed to contact you.

次に作用な説明する。Next, I will explain how it works.

まず透明な試料載置台10にホトマスクを載置し、処理
液な滴下ノズル6から滴下し、該載置台な回転軸2に連
結する駆動体3を介して回転させる。投光器4からの検
出光14な該試料載置台のほぼ中央に設けた反射物体2
5に照射し、その反射光30は受光器5にキャッチされ
る。該載置台のホトマスク上に所望のパターンを形成す
るため、まずクロム膜9を処理液でエツチングする。こ
のとぎ、検出光14はクロム膜9によ、って、はとんど
反射物体25に達しない。したがりて、全反射光を受光
している受光器5には、殆んど受光していない。
First, a photomask is placed on a transparent sample mounting table 10, a processing liquid is dropped from the dripping nozzle 6, and the photomask is rotated via a driver 3 connected to the rotating shaft 2 of the mounting table. Detection light 14 from the projector 4 is reflected by a reflective object 2 provided approximately at the center of the sample mounting table.
5, and the reflected light 30 is caught by the light receiver 5. In order to form a desired pattern on the photomask of the mounting table, the chromium film 9 is first etched with a processing solution. At this point, the detection light 14 hardly reaches the reflective object 25 due to the chromium film 9. Therefore, the light receiver 5 which receives the totally reflected light receives almost no light.

クロム膜9に対する処理液によるエツチングが進行し、
クロム膜9がホトマスク上の表面からなくなると、ホト
マスク忙入射した前記検出光14は、クロム膜9がない
ためホトマスクな透過し、該反射物体に達する。このと
ぎ該反射物体で反射した、その反射光30は再度ホトマ
スクを透過して受光器5に達する。
Etching of the chromium film 9 by the treatment liquid progresses,
When the chromium film 9 disappears from the surface of the photomask, the detection light 14 incident on the photomask is transmitted through the photomask because there is no chromium film 9, and reaches the reflecting object. The reflected light 30 that is then reflected by the reflective object passes through the photomask again and reaches the light receiver 5.

前記反射物体は、第5図に示すように、ホームベース状
の形状な成し、入射′yt27は一定方向に反射し、反
射光28は入射光27と平行に反射する構造をなしてい
る。
As shown in FIG. 5, the reflecting object has a home base shape, and has a structure in which the incident light 27 is reflected in a fixed direction, and the reflected light 28 is reflected in parallel to the incident light 27.

受光器5はセンサ等からなり、反射光3oのホトマスク
の光透過率を検出し、この検出値を電気信号等に変換す
る。この電気信号は、光透過率検山部20に連絡し、次
に処理時間設定部21に連絡される。この処理時間の情
報は、処理制御部22に連絡され、この制御指令は、駆
動制御部23及び処理液供給制御部24に連絡される。
The light receiver 5 is composed of a sensor, etc., and detects the light transmittance of the photomask of the reflected light 3o, and converts this detected value into an electrical signal or the like. This electrical signal is communicated to the light transmittance detection section 20 and then to the processing time setting section 21. This processing time information is communicated to the processing control section 22, and this control command is communicated to the drive control section 23 and the processing liquid supply control section 24.

このように、光透過率をセンサして、自動的に処理終点
な検出、すなわち処理時間な自動検出することができる
In this way, by sensing the light transmittance, it is possible to automatically detect the processing end point, that is, the processing time.

〔効 果〕〔effect〕

試料載置台内に反射物体を埋設し、その反射光のホトマ
スク透過率を検出するという作用で、ホトマスク処理終
点な正確に判定することができるという効果が得られる
By embedding a reflective object in the sample mounting table and detecting the photomask transmittance of the reflected light, it is possible to accurately determine the end point of photomask processing.

以上本発明者によってなされた発明を実施例にもとづき
具体的に説明したが、本発明は上記実施例に限定される
ものではなく、その要旨な逸脱しない範囲で種々変更可
能であることはいうまでもない。
Although the invention made by the present inventor has been specifically explained above based on examples, it goes without saying that the present invention is not limited to the above-mentioned examples, and can be modified in various ways without departing from the gist thereof. Nor.

〔利用分野〕[Application field]

以上の説明では主として本発明者によってなされた発明
なその背景となった利用分野であるホトマスクのエツチ
ング技術に適用した場合について説明したが、それに限
定されるものでになく、透明物体をエツチング処理する
ものに適用できる。
In the above explanation, the invention was mainly applied to photomask etching technology, which is the field of application behind the invention made by the present inventor, but the invention is not limited to this, and is not limited to this. Can be applied to things.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、従来のエツチング終点判定装置の概略構成図
、 第2図及び第3図は従来例の一部概略説明図、第4図は
、本発明によるホトマスク処理終点検出装置の概略構成
図、 第5図は、本発明による一部拡大説明図である。 1・・・処理槽、2・・・回転軸、3・・・駆動体、4
・・・投光器、5・・・受光器、6・・・滴下ノズル、
7・・・排出口、8・・・ホトレジスト膜、9・・・ク
ロム膜、10・・・ホトマスク、11・・・検出用パタ
ーン、12・・・ホトマスクパターン、13・・・ホト
マスク外周部、14・=検出光、15・・・蓋体、16
・・・投受光器、17・・・処理液供給部、18・・・
軸受、19・・・底壁、20・・・光透過率検出部、2
1・・・処理時間設定部、22・・・処理制御部、23
・・−駆動制御部、24・・・処理液供給制御部、25
・・・反射物体(コーナキエープ)、26・・・試料載
置台。
FIG. 1 is a schematic configuration diagram of a conventional etching end point determination device, FIGS. 2 and 3 are partial schematic explanatory diagrams of the conventional example, and FIG. 4 is a schematic configuration diagram of a photomask processing end point detection device according to the present invention. , FIG. 5 is a partially enlarged explanatory diagram according to the present invention. 1... Processing tank, 2... Rotating shaft, 3... Drive body, 4
... Emitter, 5... Light receiver, 6... Dripping nozzle,
7... Discharge port, 8... Photoresist film, 9... Chrome film, 10... Photomask, 11... Detection pattern, 12... Photomask pattern, 13... Photomask outer periphery, 14.=detection light, 15...lid body, 16
... Light emitter/receiver, 17... Processing liquid supply section, 18...
Bearing, 19... Bottom wall, 20... Light transmittance detection section, 2
1... Processing time setting section, 22... Processing control section, 23
...-Drive control section, 24... Processing liquid supply control section, 25
...Reflecting object (Konakiep), 26...Sample mounting table.

Claims (1)

【特許請求の範囲】[Claims] 1、回転自在な試料載置台とホトマスクの透過率を検出
するための投受光器からなるホトマスク処理終点検出装
置であって、前記試料載置台内の略中央部に反射物体な
埋設し、これに対し前記投光器から検出光な発し、該反
射物体からの反射光によりホトマスクの透過率を検出し
て、この検出値なもとにホトマスク処理を制御する機構
な有することを特徴とするホトマスク処理終点検出装置
1. A photomask processing end point detection device consisting of a rotatable sample mounting table and a light emitter/receiver for detecting the transmittance of the photomask, wherein a reflective object is buried approximately in the center of the sample mounting table, and On the other hand, the photomask processing end point detection method includes a mechanism for emitting detection light from the light projector, detecting the transmittance of the photomask using the reflected light from the reflecting object, and controlling the photomask processing based on the detected value. Device.
JP58229913A 1983-12-07 1983-12-07 Photomask processing end point detecting device Pending JPS60122945A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58229913A JPS60122945A (en) 1983-12-07 1983-12-07 Photomask processing end point detecting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58229913A JPS60122945A (en) 1983-12-07 1983-12-07 Photomask processing end point detecting device

Publications (1)

Publication Number Publication Date
JPS60122945A true JPS60122945A (en) 1985-07-01

Family

ID=16899700

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58229913A Pending JPS60122945A (en) 1983-12-07 1983-12-07 Photomask processing end point detecting device

Country Status (1)

Country Link
JP (1) JPS60122945A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110530825A (en) * 2018-05-23 2019-12-03 亚智科技股份有限公司 Etching period method for detecting and etching period detecting system

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110530825A (en) * 2018-05-23 2019-12-03 亚智科技股份有限公司 Etching period method for detecting and etching period detecting system

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