JPS60121268A - Electromagnetic press sticking type magnetron sputtering source - Google Patents

Abstract

PURPOSE:To increase an electromagnetic press sticking effect by paralleling the magnetic lines of force of the magnetic field impressed in an electromagnetic press sticking type magnetron sputtering source with a target surface and accelerating the release of the particles from the target surface by bombardment of gaseous ion. CONSTITUTION:An N pole part 2a of a magnet 2 for impressing a leaking magnetic field is adhered to the center of the rear surface of a target 1 in an electromagnetic press sticking type magnetron sputtering source. The S pole end 2b of the magnet 2 is disposed adequately apart to the front of the outside circumference of the target without adhering the same to the rear of the target 1. The magnetic lines 5a of force from the N pole 2a at the center are terminated at an annular S pole S while said lines are held extended roughly in parallel with the surface of the target 1. The magnetic field components 5a parallel with the surface increase consequently nearly over the entire surface of the target 1. A part of the magnetic path of the magnet 2 is electrically insulated by an insulating material and is conducted magnetically so that the magnetic pole part 2b is used commonly as an anode ring for impressing the electric field, thereby increasing the electromagnetic press sticking effect.

Description

Detailed Description of the Invention (TECHNICAL FIELD) The present invention relates to the application of an electric field and a magnetic field to particles of 4A size (metallic particles or semiconductors) in a gas atmosphere.
tIC scattered from ~ and placed on the base (k deposited on Ii,
-E When forming a thin film of these materials, the b'l of the particles is 1. l'l jl! Regarding the magnet 1 ~ Ron sputter source with Ij, in particular, if the magnetic field lines of the applied magnetic field are oriented parallel to the Tagutsu 1-plane, the C cass ion llj 'I
Tergutsu 1 to A / Jl and others' shrines)
The magnetic field 1.f 'E which made the emission of r (;e advances J:
'=v! The magnetic field pressure bonding effect of the Macune 1 to 1j sputtering source is significantly increased.

(Prior Art) As a conventional IΦ magnetic field with one frost source, there is a method described in UtJ., Akira Kimitsu's JI! proposal and Japanese Patent Application Laid-open No. 55-311142.

The conventional device described in this publication is 411 as shown in Figure 1.
In the configuration shown, on the back side of the disc-shaped target '1, -) → Il! ! (For example, take a magnet 2 whose end is ring-shaped.
No. 1-ring 3 is placed at the same 611, and solenoid coil 3 is coaxially arranged on the front outer side of ('-, i
The center of l'fi 2! Same as magnetic field component 5 from 1 pole N (
A part 5a of the magnetic field component 5 of the magnet 2 due to the magnetic field component 6
Press it onto the surface of Targutsu 1-1 and make it flat.
That is, as shown in the figure, a magnet 2 is attached to the back surface of the tags 1 to 1, and the magnet 2 causes leakage magnetic field 5 appearing on the surface of the tags 1 to be transmitted to the tags 1. Electrons are trapped by the magnetic field component 5a parallel to the surface of the tags 1 to 1, and the magnetic lines of force 5
When the electrons advance in one direction to a, the collision of the electrons with J: causes the emission of the particles emitted from the surface of the retarget 1 to increase by 1; r, thereby increasing the efficiency of sputtering. It is configured as follows.

However, in the conventional magnetic field 1f magnetron sputtering source J5 having such a configuration, the magnetic field component 5a parallel to the surface of the target 1-1 that acts effectively to cover the electrons 1-1 is the leakage magnetic field 5. Most of the leakage magnetic field 5 enters and exits the center and peripheral portions of the tag 1-1 perpendicularly to its surface. Therefore, in those parts, the surface of Targutsu 1-1 is not eroded, and the effective utilization of Targutsu i-1 is still about 30%.
This was the biggest drawback of the conventional device. As a result, the erosion grooves carved into the target 1 during the thin film fabrication were found to be similar to the progress of the thin film A'1. The depth gradually increases with j, and changes with the shedding between the optimal thin film production line A'1 and 1lJT, and the thin film production for a long time under a constant optimum line A'1. I'm having trouble continuing, so I yell. In general, this conventional device has a difference in that the plasma made of gas ions is used to form the lines of force of the leaked magnetic field 5 on a thermally weak polymer thick plate because it is attached to a grinding wheel. (Low of 1-layer thin film)
To manufacture the product, the Hatake molecular substrate (not shown) is exposed to plasma 2＼[! However, the distance between the board and the tag I required for the connection is 1'lll or at least b/I ~ 5 cm, which is about 5 cm long. , I control the thickness of the thin film (, L l'= t
'I- by mechanical adjustment of the distance between lj.
tJ also has the disadvantage of having to do 1J<'E. Furthermore, in this conventional device, when a C1 ferromagnetic target is used for manufacturing the magnetic thin film 1161 for high-density magnetic recording, the C1 ferromagnetic target short-circuits the magnetic path of the magnet 2. Another drawback is that it is extremely difficult to produce magnetic thin films at high speed by using a magnetic ↑9 target.

It should be noted that conventional sputtering technology generally uses a relatively heavy fasion as the sputtering residue, so when producing a thin film of a material such as silicon, which is often used in semiconductor devices, C', which prevents heavy argon gas particles from penetrating into the thin film and deteriorating its homogeneity, has been lacking in that it is not possible to produce a high quality thin film.

(Summary of the Invention) The object of the present invention is (above)! We have eliminated all the drawbacks of the conventional IS, improved the utilization efficiency for Tergutsu 1, stabilized the film formation conditions, and also produced magnetic thin films. An object of the present invention is to provide a magnetic field crimping type magnet 1 to a Ron spatter source that can be easily used.

Another object of the invention is the semiconductor industry,
We are in charge of realizing the sputter link technology of all existing thin film technologies, such as the production of diagonal thin films and surface treatment technology, for iC memory magnetic devices such as slave devices and electronic controllers.
i′l:,L. 11 sputter sources? It is about providing.

The other purpose of this IN light is 'Rk', compared to the past 'C escape lj'! By realizing the I-speed sputtering technique Mj, the use of the light element helium scum as sputter scum has become more circular, and (rY-by the previous sputtering technology)
Made in 11 countries and 11 (ah-)tara!゛1 Series-X1 Thin II! The purpose is to fabricate a 3rd generation device and provide it with a sputtering source.

<K 4') et al., present invention 11 hammer 11 herimakne 1
~ L1 scatter source (, 41 strong 1.F) l'l, centering on the extreme part and the other 4^ end (; The above-mentioned magnet with an electrical insulator interposed therein (the end of the magnet is slightly cut out, but the bottom of the magnet is made of a conductive book 11). The other 4 λ end portions in the shape of a spring are placed close to each other at a distance in front of the outer periphery of the magnet L1, and the 1Φ) 11i end portion of the magnet L1 and the A direct current or high frequency electric field is applied between the targets 1 and 1, and a substantially cylindrical solenoid is placed coaxially in front of the target, and the leakage of the solenoid (6 field is engaged with the leakage magnetic field of the magnet). By pressing the leakage magnetic field of the magnet almost parallel to the surface of the targs 1;'i
L7. ,: This is a characteristic.

(Example) The present invention will be described in detail below with reference to the drawings.

FIG. 2 shows an example of the configuration of the magnetic field compression type magnet 1 according to the present invention, which has been improved so as to eliminate the above-mentioned conventional drawbacks. It is completely different from the conventional device shown in FIG. is almost the same as in the conventional device shown in FIG.
1) is properly and immediately attached to the outer periphery niJ 7j of Targutsu 1-1 (with 117 necks in between, center tfi & pole N ly
The magnetic force 1 is not terminated on the surface of the target 1 as in the conventional case, but is terminated on the surface of the target 1 (directly, rather than extending in the A row) at the f4-shaped magnetic pole S. Let's do it 1
, furthermore, in order to direct such leakage as completely as possible parallel to the surface of the target 1, the target 1 and the annular shape 1a
4! A solenoid coil 4 is arranged on the I'ijj axis in the same manner as in the past on the slightly forward side of the iN, and a direct current is passed through the solenoid coil 4 toward the tag 1-1 () (center llA & Int
The leakage magnetic field from N is the same.''The leakage magnetic field of 411g from Eu
rnlzuru.

? J, the annular magnetic pole S of the magnet 12 is
1 Nori I round outside)
The l1el line of force 5 of the 1Ilii leakage magnetic field from the medium heat part of
Solenoid (~11 Il 4, J, tsu'C induced by the same 741 line of magnetic field 6, F on the surface of C target 1
As a result of this, the a of the target 1 (41 magnetic component 1 parallel to the four surfaces over the entire surface) increases significantly. Furthermore, if a part 7 of the magnetic path of the magnetic Ki2 is
It has a Renomic 1111 Ei shrine and an extremely thin electrical insulator 41' (constituted), and is magnetically insulated but only electrically insulated, and the outer space 9 lightning (!
1.1411+1i part 2b is used in place of the anode 1~ ring shown in Fig. 1 for applying an electric field in the past, and the j7 note ring 3 is not required. Ronsuba ivy 11≦1.

, as described in , the magnetism ri 2 (1
) A part of the magnetic path is electrically insulated by a ceramic magnet or a thin electric insulator 11, but not magnetically insulated, so that it acts as an integrated magnet, and one magnetic pole, for example, the N pole, is connected to the target 1. At the same time, the other annular conductive 1'l magnetic pole, for example, the S pole, is positioned in front of the outer periphery of the target 1 without contacting the periphery of the target 1, and is preferably water-cooled as a positive electrode. , Tergutsu 1-1 or its '7g1 electric Holter is used as a negative electrode, and both electrodes are connected to a DC or high frequency power source to apply an electric field.

In addition, if a direct current electric field is usually applied to the sputtering region, or if the monthly rate of Tergutsu 1~ has a high resistivity,
Charge accumulates on the target, causing functional deterioration, so a high-frequency electric field is applied to the target to reduce the temperature of 5' below 11°C. :
Avoid lf.

However, in the magnet l-IJ sputtering technology, j3 (1, ↓), j7 No. Although it is necessary to have an opposing vertical axis for the terminals 1 to 1 in the 1st direction, by using the magnetron sputtering source of the present invention (well, the annular conductive magnetic pole part 21 as shown in the figure above) can also be used as an anode. Therefore, there is no need to separately explain the anode ring J3, and the 1M configuration of the instant ring device becomes extremely simple.

I [When producing a thin film by sputtering 1
,1 ken n! There are five types of A + ΔS' + 1 (the particles of 41'1 emitted from Tagutsu 1- are ionized and C
If you have a good quality ITV membrane, you can make it;
There are cases where a thin film is formed in which the particles that fly in the form of particles have a good quality. However, if the inventive sputtering source is used, the axial length of the solenoid 1 illumination 4 can be set appropriately, and the solenoid 1 illumination 4 can be ionized with a long deviation.
4A% 1°lr is J, solenoid coil 4's magnetic field line advances in a curved manner/υC9) I rate is well carried to the board, and the solenoid coil 4 is 9. o
< Then, as soon as the magnetic field lines of the solenoid coil 4 reach the board and move, the -rA powder particles detach from the board along the magnetic field lines, and only the neutral particles, which are not affected by the magnetic field, travel straight and reach the board. , adhere and deposit 4. Furthermore, the film thickness distribution of the thin film on the substrate can not only be controlled by mechanically adjusting the distance law between the substrate and the target layer 1.
It can also be controlled by adjusting the current of the solenoid coil 4 while remaining mechanically fixed. Therefore, the solenoid 1 4 used in the sputtering source of the present invention not only compresses the leakage magnetic field appearing from the back side of the targets 1 to 1 to the front side in parallel to the target surface, but also presses the leakage magnetic field that appears from the back side of the targets 1 to 1 in parallel to the target surface. I--It has three functions: controlling the electrical properties of the grains and controlling the distribution of the thin film 19 deposited on the substrate.

(Effects) As is clear from the above description, the present invention has the following advantages: In a magnetic field compression type magnetron sputtering source, a magnetically conductive bamboo electrically insulating portion is formed in the magnetic path of the magnetic Ti which is placed close to the back surface of the C target. The end of the annular magnet 44i of the S-electromagnet 44i, which has been electrically N
? The solenoid extends to μ and the solenoid extends to J.
11 Due to the magnetic field of the pole ↑1, the surface of the target 1 (J) is deposited 71 parallel to the entire curve of the target, and the ia tiE of the target surface is uniformly electrolytically eroded by the sputtering gas ions, and the I greatly increase the J efficiency rate to 87% (-do can be done, and plasma b leakage is made up of charged particles formed near the surface of Targutsu 1). ff: Arrived U
lim! 'I no k l'l (IJ conditionno'41'' -
j y 4A To/J Le (7) It is possible to shorten Te, j, to a plate and a Cunot knot, and Ij #l can be shortened to about 1 mark by using 191, and a homogeneous sputtered thin film can be easily produced.1: Noru J, urinari is C'kiru. Mlc1
Ferromagnetism↑
It is possible to perform 11-speed sputtering on i (become C, ferromagnetic shrine o') 1, and the publication rate of ferromagnetic material is also improved to 70% or more. .

Further, the sputtering source of the present invention can be used as it is as an ion generation source, and the sputtering source of the present invention has extremely significant effects, and is capable of producing thin films such as semiconductors, metals, dielectrics, etc. at low temperatures and high temperatures. It can be used in an extremely wide range of applications, such as a￥J production and dry plating of metals.

[Brief explanation of drawings]

FIG. 1 shows the configuration of a conventional magnetic field compression type magnetron sputtering source...an i-plane view. FIG. 2 is a cross-sectional view taken along line 7iXJ of a configuration example of the magnetic field compression type magnetron sputtering source of the present invention. 1...Target 2.2a, 2b...Magnet 3.
...Anode ring 4...Solenoid 1il 5,
5a, G, 6a...Magnetic field component, lines of magnetic force 7...Ceramic magnets are also magnetically conductive electrically insulating members.

Claims (1)

[Claims] 1.1.14. J, Suh, - Centering on the extreme part, conductive μ&('l electrical insulator is interposed between the two magnetic poles with the opposite end shaped like a square). At least 1) the base part of the -7II7 end is made conductive (the center part of the back side of the sputtered river tag 1- of the 305 disk-cut plate, 2 adjacent arrangement 4 dora, haba ring-shaped other) )l
! The i end is spaced in front of the outer periphery of the tags 1~, and an electric field of direct current or frequency is applied between the other end of the magnet and the target. - In front of [, 1 cylindrical solenoid is arranged on the 1 axis, and the leakage magnetic field of the solenoid 7r is engaged with the leakage magnetic field of the magnet. A magnetic field compression type sputtering source in which the magnetic field is compressed almost parallel to the surface of the sputtering sputtering source. 2. In the sputtering source according to claim 1,
The magnetic field compression type magnet is characterized in that the electrical properties of the sputtered particles emitted from the tag can be selectively controlled depending on the length of the cylindrical solenoid. Spatter source. 31H'f The sputtering source according to claim 1 or 2, characterized in that the uniformity of sputtered particles emitted from the target can be controlled in accordance with the current of the solenoid. Overlapping magnetic field pressure@type magnet I・
Ron sputter source. 4. Scope of Claims The sputtering source according to any one of the above items is used to act in a sputtering gas consisting of a gas containing m, 11, and m atoms of sputtered particles J, which are emitted from the target. A magnetic field crimping type magnet 1~['' batting source.